Background technique
In semiconductor fabrication, it is temporary fixed often need to utilize vacuum chuck that wafer is carried out, preventing because of wafer generation relative movement influences normally carrying out of technology, as the test technology of IC chip, scribing/sliver technology, abrasive process etc.
Existing vacuum chuck generally includes first surface, second surface and disk body, and first surface directly contacts with its object that will adsorb (as wafer), and second surface then links to each other with vacuum system.Wherein, first surface has pore, and this pore directly runs through first surface, disk body and second surface, links to each other with vacuum system.In addition, the vacuum chuck that has also can form a depressed area in the second surface center region, and pore is arranged in this depressed area.When second surface was connected with pedestal, this depressed area can form a closed chamber (the two contacted zone should be have suitable flatness through grinding), and the center of this closed chamber by pedestal links to each other with vacuum system.During work, gas pressure can act on this closed chamber, be sent to the first surface of vacuum chuck by this closed chamber, adsorbate is adsorbed, the stressed meeting of adsorbate is more even like this, simultaneously, can also reduce the main shaft of vacuum chuck and the error of perpendicularity between the pedestal, this is particularly important for the high technology of ask for something precision.
Fig. 1 is the schematic representation of the first surface of existing vacuum chuck, as shown in Figure 1, has one group of pore 101 that runs through vacuum chuck at the center of the first surface 100 of vacuum chuck, and it passes the depressed area that first surface, disk body and second surface arrive second surface.In order to increase the suction of sucker to adsorbate, on first surface, make one group of groove 102 that is interconnected with pore 101 usually, it can guarantee that the suffered adsorption force of wafer increases adsorption force under the prerequisite comparatively uniformly, improves adsorption effect.This groove 102 generally can be designed to be uniformly distributed on the first surface, among Fig. 1 102 shown in be a kind of common groove shapes.(among the figure shown in 103 is the fixed hole that is used for fixing vacuum chuck.)
Fig. 2 is the schematic representation of the existing vacuum chuck second surface corresponding with Fig. 1, as shown in Figure 2, in the second surface 200 of vacuum chuck, be formed centrally a depressed area 202, be provided with pore 101 in this depressed area 202, and form a closed chamber between these depressed area 202 meetings and pedestal, this closed chamber links to each other with vacuum system by the connection mouth of pedestal, for vacuum chuck provides vacuum pressure.In addition, in order to form closed chamber, should have higher flatness at second surface and the corresponding contact area that forms closed chamber of pedestal.In order to reduce the difficulty of its processing grinding, as shown in Figure 2, can around the depressed area 202 of second surface, form the annulus belt area 204 of an island, this region list area is less, easily be processed as the zone that has than high-flatness, can guarantee the sealing of formed closed chamber between vacuum chuck and the pedestal.
Fig. 3 is the sectional view of existing vacuum chuck along A-A ' line among Fig. 1, as shown in Figure 3, the pore 101 of vacuum chuck has penetrated first surface, disk body and the second surface of vacuum chuck, and has been formed centrally groove 102 and depressed area 202 on the first surface of vacuum chuck and second surface with pore 101 being respectively.In addition, be positioned at the depressed area 202 of second surface outer be annulus belt area 204, it can contact with the corresponding region of pedestal, makes depressed area 202 become a closed chamber.During work, vacuum pressure can act in this closed chamber, reaches first surface by pore 101, in the full groove 102 thereon, realizes the absorption to adsorbate.
Can see that existing vacuum chuck adsorbs fixed wafer by pore that is positioned at the sucker center region and the groove that is connected with this pore that is positioned on the vacuum chuck first surface.Yet, the vacuum chuck of this structure can only be used to adsorb size and the definite wafer of shape, otherwise gas leak phenomenon can take place in the groove that covers that is not covered in inhaling the sheet process, has wasted the energy of vacuum system on the one hand, also can cause adsorbate absorption not firm on the other hand.
Yet in actual production, the size of adsorbate and shape are normally inconsistent, and at this moment, existing vacuum chuck uses just very inconvenient.With wafer sort company is example, it often need be tested the product of different company, and the size of different company's product may have nothing in common with each other, if any product be 4 inches (1 inch=25.4mm) wafer, have plenty of 6 inches wafers, or 8 inches sheets, even be that test film in irregular shape is tested in requirement sometimes.Existing solution has two kinds: a kind of is all to buy a testing apparatus at the wafer of each size or shape, and it is easy to use, but needs to buy a large amount of testing apparatuss, and usage ratio of equipment is not high, has caused the waste of cost of production.Another kind of then be that size, shape at product changed different vacuum chucks, but this is pretty troublesome in operation, only is again vacuum chuck just to be positioned to require a great deal of time, and implements very inconvenient.
Except that field of semiconductor manufacture, in field of machining, vacuum chuck also can be used as and a kind of workpiece is fixed thereon, and carries out the device of machining thereon, but its application in this field equally also exist adsorbable workpiece in the problem that is restricted aspect the size and dimension.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.
The utility model can be widely used in the every field, and can utilize many suitable material.Be to be illustrated by preferred embodiment below, the utility model is not limited to this specific embodiment certainly, and the known general replacement of one of ordinary skilled in the art is encompassed in the protection domain of the present utility model far and away.
The utility model utilizes schematic representation to describe in detail, and when the utility model embodiment was described in detail in detail, for convenience of explanation, schematic representation can be disobeyed general ratio and be done local the amplification, should be with this as to qualification of the present utility model.
Vacuum chuck of the present utility model can be the bearing device of arbitrary shape, as square, rectangular or circle etc., this bearing device by vacuum with wafer or other article absorption, fixing.And vacuum chuck of the present utility model can be used in a plurality of engineerings field.Wherein " vacuum " is a kind of idiom, is not the vacuum that really reaches desirable.
First embodiment of the present utility model has proposed a kind of vacuum chuck on the probe test platform, absorption different size wafer that can be used for.The probe test platform is semiconductor devices one of visual plant aborning, it is applied on the middle survey operation of production line postchannel process line, its function is exactly with wafer to be measured and test instrument automatic butt, so that test instrument is tested and the index record in order to the parameter of each semiconductor devices on the tested wafer.It is to the high requirement that is adsorbed with of wafer in the test process, if the not firm test result that just may cause of absorption is made mistakes.
The size of the vacuum chuck that existing probe test platform is used is fixed, the size of adsorbable wafer also fix: wafer is had adsorptivity preferably as 8 inches vacuum chucks when 8 inches wafers of test, but when 6 inches of tests or littler wafer, because of the groove and the pore of the first surface of its used existing vacuum chuck communicates with each other, 6 inches wafer can not cover groove fully, the phenomenon that can leak air causes occurring the not firm problem of wafer absorption in test process.If the recess region of dwindling the vacuum chuck first surface for the test bench that makes 8 inches can take into account the test of littler wafer simultaneously can weaken the adsorptive power to 8 inches wafers again, cause its in test process because of not firm the going wrong of absorption.For this reason, proposed to have the vacuum chuck of locking device among the utility model first embodiment, this vacuum chuck has overcome the problems referred to above, both can adsorb 8 inches wafers well, also can adsorb the wafer of smaller szie well.
Vacuum chuck among the utility model first embodiment comprises first surface, at the second surface and the disk body between first surface and second surface of described first surface opposition side, wherein, first surface also has been divided into plural adsorption zone, is provided with at least one pore in each adsorption zone; Pore in each adsorption zone is responsible for the adsorbate on this adsorption zone is adsorbed.In addition, the vacuum chuck in the present embodiment has also carried out the control of conducting or cut-off state by locking device at least one pore, has realized the control respectively to each adsorption zone.
Fig. 4 is the schematic representation of the first surface of the vacuum chuck among the utility model first embodiment, as shown in Figure 4, in order to utilize the good adsorption of same vacuum chuck realization to 4 inches, 6 inches and 8 inches wafers, the first surface 400 of vacuum chuck is divided for three adsorption zones in the present embodiment, is applicable to the wafer of 4 inches, 6 inches of absorption or 8 inches respectively.Wherein, first adsorption zone is by being positioned at central circular groove 401 and outside two annular concentric grooves 402,403 are formed, and circular groove 401 and annular groove 402,403 and between utilize a groove radially to be interconnected.The pore that is provided with in this adsorption zone in the present embodiment is positioned at border circular areas 401, and the quantity of pore can be for one or more, and as shown in Figure 4, the stomatal number that is provided with in the present embodiment is 4.First adsorption zone in the present embodiment is to be used to adsorb be of a size of 4 inches wafer, so the diameter dimension of peripheral annular groove 403 in this adsorption zone is set to be slightly less than 4 inches, as (wherein, 1 inches=25.4 millimeters) such as 3.5 inches or 3 inches.For making adsorption force comparatively even, circular groove 401 and annular concentric groove 402 that can it is inner evenly set within it, and are set to 1 inch as diameter dimension that can circular groove 401, and the diameter dimension of annular concentric groove 402 is set to 2 inches etc.
Second adsorption zone of vacuum chuck first surface is made up of another annular concentric groove 404 that is positioned at annular groove 403 outsides in the present embodiment.The pore 411 of this adsorption zone is arranged at the annular groove 404 interior (pore size is less, is difficult among the figure differentiating) of the position shown in the figure.This adsorption zone can be used for adsorbing and is of a size of 6 inches wafer, so the diameter dimension of this annular concentric groove 404 can be set to be slightly less than 6 inches, as is 5.5 inches or 5 inches etc.
The 3rd adsorption zone of vacuum chuck first surface is formed by being positioned at annular groove 404 outer another annular concentric grooves 405 in the present embodiment.The pore 412 of this adsorption zone is positioned at this annular groove 405 of the position shown in the figure.This adsorption zone can be used for adsorbing and is of a size of 8 inches wafer, so the diameter dimension of this annular concentric groove 405 can be set to be slightly less than 8 inches, as is 7.5 inches or 7 inches etc.
For the pore in each adsorption zone is connected with vacuum system, realization is to the absorption of adsorbate on each adsorption zone, vacuum chuck in the present embodiment is provided with a passage in disk body, this passage is connected to the pore in the annular groove 405 of pore in the annular groove 404 of second adsorption zone and the 3rd adsorption zone the depressed area (this depressed area forms closed chamber in the back that is connected with pedestal, and this closed chamber is connected with vacuum system by the pedestal center) at vacuum chuck second surface center.
Fig. 5 is the schematic representation of the second surface of the vacuum chuck among the utility model first embodiment, and as shown in Figure 5,511 on the second surface 500 is that the passage that is positioned at disk body extends to a little groove that forms behind the depressed area 501 at second surface center within it.For controlling conveniently, in the disk body of vacuum chuck, radially formed a passage in the present embodiment, and the groove that the pore 411 and 412 in first adsorption zone and second adsorption zone all is arranged on this passage and first, second adsorption zone is intersected part, like this, only need a passage radially promptly simultaneously two adsorption zone inner air vents to be connected to depressed area 501.In addition, in order to alleviate the weight of vacuum chuck, also reduction processing having been made in the part area of vacuum chuck second surface in the present embodiment, promptly is the zone that caves inward that forms behind the attenuate as each 502 isolated zones among Fig. 5; 503 zones then are still to keep the interval region that exceeds.
More than be with the first surface of vacuum chuck by the size of adsorbable wafer size divide for three adsorption zones, and each adsorption zone is provided with separately the pore that is connected with vacuum system respectively.But if will all can realize good adsorption, also need to control the conducting of each adsorption zone inner air vent respectively or end, to realize Selective Control to each adsorption zone to wafers having different sizes.In the present embodiment, can divide three kinds of situations that the pore in each adsorption zone is controlled:
A, when 8 inches wafers are tested, the pore of first, second on the vacuum chuck and the 3rd adsorption zone all needs to be on state, vacuum system can be adsorbed whole 8 inches wafers by the institute on the vacuum chuck first surface is fluted, both had stronger adsorption force, also taken into account the uniformity of the suffered adsorption force of wafer.
B, when 6 inches wafers are tested, need make first adsorption zone and the interior pore of second adsorption zone on the vacuum chuck be on state, vacuum system adsorbs by the wafer of the annular groove in second adsorption zone 404 each groove in first adsorption zone to 6 inches.Pore in the 3rd adsorption zone of noting can not being covered by 6 inches wafers this moment need be in cut-off state, is connected and the phenomenon that leaks air with vacuum system to avoid it, and this can cause the adsorption effect variation of 6 inches wafers.
C, when 4 inches wafers are tested, only need make the pore conducting of first adsorption zone, vacuum system only adsorbs by the circular groove in first adsorption zone 401 and outside 402,403 pairs of wafers of two annular concentric grooves thereof; And the pore in second adsorption zone and the 3rd adsorption zone need be in cut-off state, is not connected with vacuum system, to avoid the phenomenon that leaks air.
To on same vacuum chuck, realize the control of above-mentioned A, B, three kinds of situations of C, need respectively the conducting or the cut-off state of each adsorption zone inner air vent to be controlled, just need to add the locking device that is used for described pore is locked in conducting or cut-off state.In the present embodiment, pore in first adsorption zone always is on state, can it not locked control, but the pore in second, third adsorption zone needs to be on state sometimes, sometimes need to be in cut-off state, need be connected to locking device, realize control its conducting or cut-off state.There are two above pores need lock the situation of control for this, both can add a locking device, also can utilize same locking device simultaneously several pores to be controlled at each pore.In the present embodiment, employing be the back a kind of method.
Locking device in the present embodiment is made up of lock-bit groove and lock-bit bar, and wherein, the lock-bit groove is positioned at the disk body of vacuum chuck, outer side wall along disk body extends in disk body, be connected with the pore of second, third adsorption zone, in the present embodiment, it also is connected with passage in the disk body simultaneously; The lock-bit bar places in the lock-bit groove, and the lock-bit bar is moved to when covering pore, and this pore is in cut-off state; The lock-bit bar is moved to when not covering pore, and this pore is on state.
Fig. 6 is that vacuum chuck among the utility model first embodiment is along the sectional view of B-B ' line among Fig. 4, as shown in Figure 6, the 401st, vacuum chuck first surface central circular groove has 4 pores in it, on the section of cutting open along the B-B ' line among Fig. 4, two pores have wherein been passed through.Each annular concentric groove on shown in the figure 402,403, the corresponding vacuum chuck first surface of 404 and 405 difference.501 correspondences among the figure be the depressed area at vacuum chuck second surface center, after vacuum chuck was connected to pedestal, this 501 zone can form a closed chamber with pedestal, and linked to each other with vacuum system by the gas circuit at pedestal center.Shown in the figure 411 and 412 is respectively the pore that is positioned at the first and second adsorption zone annular concentric grooves; Shown in the figure 613 is for being used for the pore 411 and 412 of the second and the 3rd adsorption zone is connected to the passage of the depressed area 501 of vacuum chuck second surface in the disk body, its with disk body in lock-bit groove 610 be connected, this lock-bit groove 610 is for the pore 411 that locks second, third adsorption zone and 412 and be provided with, its outer side wall along disk body extends in disk body, has connected the pore 411,412 of second, third adsorption zone and the passage 613 in the disk body.
Fig. 7 is the amplification view of the pore 411 of vacuum chuck shown in Figure 6, and as shown in Figure 7,701 among the figure represented the air hole structure that is communicated with first surface and lock-bit groove, 702 annular grooves of representing the pore place.
Introduce lock-bit bar used in the present embodiment below, according to the motion mode of lock-bit bar in the lock-bit groove, the lock-bit bar can be divided into revolvingly and plug-type, used lock-bit bar is revolving in the present embodiment.Fig. 8 is the stereogram of the lock-bit bar of the vacuum chuck among the utility model first embodiment, as shown in Figure 8, this lock-bit bar is made up of the handle 810 and the body of rod 800, wherein, the body of rod is a hollow, in pipeline is arranged, be closed at handle 810 these pipelines of place end, then remain open state (not shown among Fig. 8) at the other end.When inserting the lock-bit bar in the lock-bit groove, the pipeline in the lock-bit bar can be connected with passage in the disk body by the lock-bit groove.For realizing the control to second, third adsorption zone inner air vent simultaneously, the different straight lines in the sidewall upper edge in lock-bit rod tube road perpendicular to the pipeline base have two groups of openings.Wherein, first group of opening has two--and 801 and 802, it corresponds respectively to the position of second, third adsorption zone inner air vent (being each pore that the lock-bit groove is connected) in the position longitudinally at the lock-bit bar.When the lock-bit bar in the lock-bit groove, turn to this first group of opening respectively with second, third adsorption zone in pore when aligning, the pore in second, third adsorption zone is locked on state.At this moment, the vacuum pressure that is produced by vacuum system can be sent in the closed chamber that forms between second surface and pedestal by gas circuit, arrive by the pore in first, second and the 3rd adsorption zone in the central circular groove and each annular groove of vacuum chuck first surface, wafer is adsorbed.Because all pores all are on state, the vacuum chuck of this moment can be used for adsorbing 8 inches wafer (foregoing A situation).
Second group of opening on the lock-bit bar has only one 803, its place perpendicular to the straight line on pipeline base and the linear interval certain distance at first group of opening place, this second group of opening 803 can think that corresponding to the position of the second adsorption zone inner air vent (being the part holes that the lock-bit groove is connected) of vacuum chuck it is along the circumference translation of described pipe side wall and form by the part opening (801 opening) in first group in the position longitudinally at the lock-bit bar.In the present embodiment, corresponding opening 801 becomes 90 ° of angles with respect to the center of circle of lock-bit bar cross section in second group of opening 803 and the first group of opening, promptly, after first group of opening aimed at pore in second, third adsorption zone on the lock-bit bar, make it in the lock-bit groove, rotate 90 ° again, just second group of opening on the lock-bit bar can be gone to the pore of aiming in second adsorption zone.Because second group of interior pore of only corresponding second adsorption zone opened an opening 803, at this moment, the pore in second adsorption zone is on state, and the pore in the 3rd adsorption zone then is in cut-off state.After the vacuum pressure that is produced by vacuum system can be sent to the closed chamber that forms between second surface and pedestal by gas circuit, only can wafer be adsorbed by in the groove in first and second adsorption zones of the arrival of the pore in first and second adsorption zones vacuum chuck first surface.The vacuum chuck of this moment can be used for adsorbing 6 inches wafer (foregoing B situation).
In addition, when the lock-bit bar turns to first group of opening and second group of opening when all departing from pore in second, third adsorption zone fully in the lock-bit groove, the pore in second, third adsorption zone all is in cut-off state.The vacuum pressure that is produced by vacuum system only can arrive in the groove in first adsorption zone of vacuum chuck first surface by the pore in first adsorption zone after being sent to the closed chamber that forms between second surface and pedestal by gas circuit, and wafer is adsorbed.The vacuum chuck of this moment can be used for adsorbing 4 inches wafer (foregoing C situation).
What realize when knowing that the lock-bit bar inserts the lock-bit groove with which kind of angle is the control of which kind of situation, the closed end of lock-bit bar that can also be outside exposing disk body (promptly, be positioned at an end in the lock-bit groove outside) add a lock-bit mark, as, can be at standardized line of the position of corresponding first group of opening and second group of opening difference, when the pore aligned in position in the line of representing first group of aperture position and second, third adsorption zone, show that the pore in second, third adsorption zone all is on state, realizes the control of A situation; When the pore aligned in position on the line of representing second group of aperture position and the first surface, show that the pore in second adsorption zone is on state, the pore in the 3rd adsorption zone is in cut-off state, realizes the control of B situation; When two lines all depart from pore position in second, third adsorption zone fully, show that the pore in two adsorption zones all is in cut-off state, realize the control of C situation.
In the present embodiment, as shown in Figure 8, for easy to operate, on the lock-bit bar, added a handle 810, can make the direction of this handle 810 corresponding with the position of first group of opening, when position that this handle 810 points to during, show that two pores all are on state, the control of realization A situation like this with the pore aligned in position in second, third adsorption zone.In addition, because second group of opening and first group of opening have counterclockwise departed from 90 ° with respect to the center of circle of lock-bit bar in the present embodiment, therefore, when this handle 810 is compared with the pore position in second, third adsorption zone when counterclockwise having departed from 90 °, show that the pore in second adsorption zone is on state, pore in the 3rd adsorption zone is in cut-off state, realizes the control of B situation; And refer in other directions when handle 810, as comparing, when counterclockwise having departed from 180 ° or 270 °, show that the pore in two adsorption zones all is in cut-off state with the pore position in second, third adsorption zone, realize the control of C situation.
In addition, in order to realize the sealing of gas circuit, improve the effect of wafer absorption, in the present embodiment also the lock-bit bar near the sealing one end (promptly, be positioned at an end in the described lock-bit groove outside, or say handle 810 place ends) the position installed a seal ring 811 additional, the sealing circle can be to be made by rubber-like materials such as rubber.
Utilize one group of lock-bit groove and lock-bit bar to realize simultaneously in the present embodiment to the conducting of two pores or the control that ends, in other embodiments of the present utility model, can also adopt this method simultaneously the conducting or the cut-off state of three above pores to be controlled, at this moment, each opening of first group corresponds respectively to the position of each pore that the lock-bit groove is communicated with in the position longitudinally at the lock-bit bar, the interval that has different distance between the straight line of the edge at each opening place of all the other each group perpendicular to the straight line on pipeline base and each opening place of first group respectively, and the part opening that all the other each each openings of organizing are in first group forms along the circumference translation of pipe side wall.In addition, the opening number of all the other each groups also should have nothing in common with each other.Under the enlightenment of the utility model the foregoing description, the application of this time control to three above pores is easy to derive obtain for the ordinary skill in the art, does not repeat them here.
Among first embodiment of the present utility model, each pore that need control is listed on same the straight line, utilize a passage in the disk body that each pore is connected together, and then utilize one group of locking device to realize simultaneously the conducting of each pore or the control of cut-off state; In other embodiments of the present utility model, also can directly utilize a plurality of locking devices respectively each pore to be controlled.
Among first embodiment of the present utility model, what realize respectively is to utilize first adsorption zone, first and second absorption, first, the second and the 3rd adsorption zone adsorbs three kinds of situations to wafer, in other embodiments of the present utility model, also can realize first, the situation that the second and the 3rd adsorption zone adsorbs separately respectively, at this moment, can with on the lock-bit bar by the opening (802 opening) of correspondence the 3rd adsorption zone pore in first group of opening along the circumference of described pipe side wall translation certain distance (with respect to second group of opening) and form the 3rd group of opening again, increasing the pore of realizing a kind of second adsorption zone ends, the state of the pore conducting of the 3rd adsorption zone.And then the catch means that adds another group is carried out the independent control (in this case, be convenient control, the stomatal number in can first adsorption zone is set to one) of conducting or cut-off state to the pore of first adsorption zone.Perhaps also can utilize same set of lock-bit groove and lock-bit bar simultaneously the conducting or the cut-off state of the pore of three adsorption zones to be controlled, under the utility model first embodiment's enlightenment, the extension of this application is easy to understand for the ordinary skill in the art and obtains, do not repeat them here.
Second embodiment of the present utility model has just proposed a kind of vacuum chuck that utilizes a plurality of locking devices respectively each pore to be controlled.
Fig. 9 is the stereogram of the vacuum chuck among the utility model second embodiment, as shown in Figure 9, the first surface of this vacuum chuck 900 divides for four adsorption zones 901,902,903 and 904, the center of each adsorption zone has a pore (911,912,913 and 914) respectively, in order to strengthen adsorption force, around each pore, also formed the criss-cross groove (in the present embodiment, the pore of each adsorption zone is arranged in the intracardiac of this cross recess) that in this adsorption zone, is interconnected respectively.
Vacuum chuck in the present embodiment not only can be realized the absorption to the wafer or the workpiece of different size, shape, absorption when can also realize a plurality of wafers or workpiece.For realizing this point, need be to the conducting of four adsorption zone inner air vents or by controlling respectively.Pore in four adsorption zones in the present embodiment is not positioned on the straight line, be to be connected in the depressed area of vacuum chuck second surface by four passages in the disk body respectively, is connected to vacuum system by this depressed area again.At this moment, be difficult to lock the control that device carries out conducting or ends four pores simultaneously, adopted the quadruplet locking device that four pores are controlled respectively in the present embodiment by a cover.
Each locking device in the present embodiment is formed by a cover lock-bit groove and lock-bit bar.Wherein, lock-bit groove (shown in 920 among Fig. 9) processes in the disk body of vacuum chuck, and its outer side wall along disk body extends in disk body, each lock-bit groove all with the pore of one of them adsorption zone with and pairing passage be connected.During work, the lock-bit bar is placed in the lock-bit groove, when the lock-bit bar moves to when covering pore, this pore is in cut-off state; The lock-bit bar is moved to when not covering pore, and this pore is on state.
Each lock-bit bar in the present embodiment still can be the lock-bit bar of the pipe type that an end seals, an end is open, Figure 10 is the stereogram of the lock-bit bar of the vacuum chuck among the utility model second embodiment, as shown in figure 10, this lock-bit bar is made up of the handle 1010 and the body of rod 1000, and the vertical corresponding part in the position of the pore that is connected with the lock-bit groove on the pipe side wall of the body of rod has an opening 1001.Wherein, the sensing of handle 1010 and pipe side wall upper shed are in same direction, in the time of in the lock-bit bar places the lock-bit groove, if the sensing of handle 1010 is consistent with the pore position in its pairing adsorption zone, this adsorption zone inner air vent conducting, this adsorption zone is in adsorbed state; If the interior pore position of the sensing adsorption zone pairing with it of handle 1010 is inconsistent, when having departed from 90 °, this adsorption zone inner air vent ends, and this adsorption zone fails to be in adsorbed state.In addition, in order to improve adsorption effect, the lock-bit bar of present embodiment has also been installed seal ring 1011 near the position of handle 1010.
By adjustment respectively to the quadruplet locking device, make the different pore of its control be in different conductings or cut-off state, just can realize control respectively to each adsorption zone.
In the present embodiment, be still and utilize the conducting or the cut-off state of the single pore of band lock-bit pole pair pipeline, that opening is arranged to control, in other embodiments of the present utility model, can also utilize the state of the lock-bit pole pair pore of other modes to control.As plug-type lock-bit bar, under the constant situation of lock-bit groove structure, it can utilize (two ends are all sealed) of not being with pipeline, do not have opening lock-bit pole pair pore conducting or by controlling: the lock-bit bar by its degree of depth that is positioned at the lock-bit groove be set to two grades (can be on the body of rod corresponding two grades position add the lock-bit mark, two seal rings that perhaps can the diverse location place is provided with respectively on the body of rod, and with it as the lock-bit mark), when the degree of depth in the lock-bit bar places the lock-bit groove is in more shallow first grade, the pore (failing pore is covered) that the lock-bit bar is failed and connected in the lock-bit groove, this pore is on state; When the degree of depth in the lock-bit bar places the lock-bit groove is in darker second grade (first grade and second grade of the lock-bit bar has all placed in the lock-bit groove), the degree of depth of lock-bit bar in the lock-bit groove surpassed the pore (pore is covered) that the lock-bit groove is connected, and this pore is in cut-off state.
In addition, the plug-type lock-bit bar of this kind also can be used for controlling a plurality of pores that same lock-bit groove is connected, at this moment, the lock-bit bar can be divided into plural shelves by its degree of depth that is positioned at described lock-bit groove, when first grade of lock-bit bar placed in the lock-bit groove, each pore that the lock-bit groove is communicated with all was locked on state; When second grade of lock-bit bar places in the lock-bit groove, have at least one to be locked in cut-off state in each pore that the lock-bit groove is communicated with, remaining still is on state; When the third gear of lock-bit bar places in the lock-bit groove, then have at least two to be in cut-off state in each pore that the lock-bit groove is communicated with.
Above-mentioned two embodiments utilize lock-bit groove and lock-bit bar as the locking device of pore, in other embodiments of the present utility model, can also utilize other locking device to come pore is locked.As the 3rd embodiment of the present utility model is exactly to have utilized air circuit breaker to be used as the locking device of pore.
Figure 11 is the stereogram of the vacuum system among the utility model the 3rd embodiment, and as shown in figure 11, the first surface of this vacuum chuck 1100 can be divided into four adsorption zones by four pores 1101,1102,1103 and 1104.Each pore in the present embodiment has all run through first surface, disk body and the second surface of vacuum chuck, directly link to each other with each gas circuit, the gas circuit that each pore connected in the present embodiment all has been connected to an air circuit breaker (1111,1112,1113 and 1114) respectively, to realize the conducting of each pore in four adsorption zones or the control respectively of cut-off state.The control that utilizes this air circuit breaker that each pore is carried out conducting or ends equally also can avoid leaking gas or adsorbing not firm phenomenon, realizes the good adsorption to the adsorbate of different size and shape.
The vacuum chuck of first surface, disk body and second surface run through to(for) the pore in the present embodiment, direct situation about linking to each other with each gas circuit, except can utilizing the respectively control of this air circuit breaker realization, also can also utilize lock-bit groove and each pore of lock-bit pole pair to carry out the control of conducting or cut-off state to each pore.At this moment, can in the disk body of vacuum chuck, a lock-bit groove be set respectively at each pore, this lock-bit groove extends in disk body along the outer side wall of disk body, be connected with in four pores one (for control convenient, also can with in disk body, extend certain-length again after pore is communicated with).The lock-bit bar can also can be the lock-bit bar of non-pipe type for the lock-bit bar of the open pipe type of end sealing, an end, just this moment the lock-bit bar vertically on the position of the pore that is communicated with of corresponding lock-bit groove have a penetration hole.When this penetration hole and described pore on time, be on state between described pore and its external gas circuit, otherwise, then be in cut-off state.
The control mode of the lock-bit bar of this moment can be for revolving: the outer end at the lock-bit bar installs one handle additional, the sensing of this handle vertically parallels with penetration hole, like this, when handle goes to parallel with penetration hole (perpendicular to disk body), its pore of controlling is on state, and its pairing adsorption zone can adsorb adsorbate; When handle goes to and passes through emptying aperture when vertical (being parallel to disk body), its pore of controlling is in cut-off state, and its pairing adsorption zone can not adsorb adsorbate.
It also can be for plug-type: the lock-bit bar is set to two grades by its lengthwise position that is positioned at the lock-bit groove, when the degree of depth in the lock-bit bar places the lock-bit groove is in first grade, the pore overlaid that penetration hole on the lock-bit bar is connected with the lock-bit groove, pore is not covered and covers, and is on state; The degree of depth in the lock-bit bar places the lock-bit groove is in second grade and (removes all the other positions of first grade, can be that to be positioned at the more shallow position of lock-bit groove also can be darker position) time, the pore overlaid (the lock-bit bar covers pore) that penetration hole on the lock-bit bar is not connected with the lock-bit groove, this pore is in cut-off state.
For above-mentioned lock-bit bar with penetration hole, also can make the lock-bit groove link to each other with a plurality of pores simultaneously along straight line, then, corresponding a plurality of pores have a plurality of penetration holes on the lock-bit bar again, realization is to the conducting of a plurality of pores or the control of cut-off state, the extension of this application also is easy to obtain through deriving for those of ordinary skill in the art, does not repeat them here.
Notice that vacuum chuck of the present utility model not only can be used for the probe test platform, also can be used for multiple occasion, not even in the same domain.As being used for the multiple semiconductor technology that need adsorb wafer such as photoetching, etching, scribing, sliver or abrasive disc, can also be used for field of machining, to realize absorption to difform workpiece.
Though the utility model with preferred embodiment openly as above; but it is not to be used for limiting the utility model; any those skilled in the art are not in breaking away from spirit and scope of the present utility model; can make possible change and modification, therefore protection domain of the present utility model should be as the criterion with the scope that the utility model claim is defined.