CN201043737Y - High power semiconductor lighting lamp - Google Patents
High power semiconductor lighting lamp Download PDFInfo
- Publication number
- CN201043737Y CN201043737Y CNU2007200703820U CN200720070382U CN201043737Y CN 201043737 Y CN201043737 Y CN 201043737Y CN U2007200703820 U CNU2007200703820 U CN U2007200703820U CN 200720070382 U CN200720070382 U CN 200720070382U CN 201043737 Y CN201043737 Y CN 201043737Y
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- CN
- China
- Prior art keywords
- fin
- sheet
- led
- heat
- heat radiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The utility model discloses a high-power semi-conductor lamp and comprises a lamp cap, a LED drive, an insulation shell, a radiator with intersected heat radiating sheet and a high-power LED, the bottom of the radiator with intersected heat radiating sheet is provided with a circular concave groove, the high-power LED is fixed on the central plane of the circular concave groove, a reflector surrounds the high-power LED, and a lampshade is connected with the circular concave groove in a sealing way; the radiator with intersected heat radiating sheet consists of a concave heat conducting body, a rib sheet, a heat transmission sheet, a fins sheet and a heat radiating sheet, the rib sheet is arrayed in the concave heat conducting body vertically, the heat transmission sheet is arrayed on the external wall of the heat conducting body in a surrounding way, the two sides of the initiating terminal and the end of the heat transmission sheet are provided with the fins sheet, the width of the fins sheet becomes more narrow from downward to upward, the width of the heat radiating sheet becomes more narrow from upward to downward and is distributed among the heat transmission sheet, the heat radiating sheet and the fins sheet are arrayed in an intersection way, and the heat radiating sheet is connected with the external wall of the concave heat conducting body. The radiator with intersected heat radiating sheet molded with aluminum material with good thermal conductivity improves heat radiating capability of the utility model to surrounding space and reduces light decay of the high-power LED in maximum, and then indoor and outdoor common lighting and decorative lamp with compact structure can be realized.
Description
Technical field
The present invention relates to a kind of semi-conductor lighting lamp, particularly a kind of single great power LED is fixed on the high power semiconductor lighting lamp on the fin chiasma type radiator.
Background technology
The semi-conductor electricity light source is a kind of electric light source that does not have filament, is a kind of luminescent device that directly electric energy is converted into luminous energy, is called light emitting diode, is also referred to as semiconductor lamp, the English LED that is called for short.Semiconductor lighting is considered to the new energy-conserving light source of illumination of 21 century.LED is not only energy-conservation, also have the life-span long, volume is little, safety, environmental protection, characteristics such as non-maintaining, easy to control.LED can replace conventional light source to use in a lot of places, and the speed of LED replacement traditional lighting light source has been quickened in the particularly appearance of great power LED, also makes LED become real in the large-area applications of indoor and outdoor lighting.
Great power LED is a direction of LED industry future development, but great power LED is had relatively high expectations to heat dissipation technology, the power of LED is big more, the heat flow density of its chip is just high more, environment temperature reaches certain limit will very fast generation light decay, directly cause the decline in LED life-span, the temperature of led chip sharply rises and damages led chip when the effect of radiator is bad, has only the heat dissipation technology that solves great power LED, delay the light decay of LED to greatest extent, the application of the large-area popularization great power LED of ability.
Semi-conductor lighting lamp of the prior art, structure as shown in Figure 1, one group of great power LED 12 is fixed on the funnel type radiator 17, and be electrically connected with lamp holder 1 and led driver 2, funnel type radiator 17 is fixed on the radiator stand 16, and by insulation crust 3 and lampshade 10 great power LED 12 is surrounded.The semi-conductor combined lamp of this structure, luminous intensity is unbalanced, and because of funnel type radiator 17 is surrounded by lampshade 10 large tracts of land, can not carry out sufficient heat exchange with air, and heat dispersion is relatively poor, and comparatively fast produces light decay, directly causes the decline in LED life-span.
Summary of the invention
Unbalanced and the relatively poor decline that causes the LED life-span of great power LED cooling effect for the luminous intensity that solves semi-conductor combined lamp, the invention provides and a kind of funnel type radiator 17 and radiator stand 16 are fused, and be improved to fin chiasma type radiator, and adopt the high power semiconductor lighting lamp of single great power LED.
The technical solution adopted for the present invention to solve the technical problems is: comprise lamp holder, led driver, insulation crust, fin chiasma type radiator and great power LED, wherein lamp holder, led driver and great power LED are electrically connected, fin chiasma type radiator bottom surface is provided with ring groove, fixing great power LED on its ring groove central plane, and with reflective mirror encirclement great power LED, lampshade and ring groove are tightly connected; Insulation crust is provided with light sensor.
Described fin chiasma type radiator is made of matrix heat carrier, fin, heat transfer sheet, fin and fin; On matrix heat carrier inwall and bottom surface around and vertical row show fin; On matrix heat carrier outer wall around and the arranged vertical heat transfer sheet, the both sides, top and the end of heat transfer sheet are provided with fin, the width of its fin is to narrow down from top to bottom; The width of fin is to narrow down from top to bottom, and is distributed between the heat transfer sheet, with the fin cross arrangement, and with matrix heat carrier outer wall on be connected.
In the led driver structure, light-operated PCB is fixed on the side of LED power supply PCB, and is electrically connected with light sensor; Be fixed with the isolating transformer of high frequency at the opposite side of LED power supply PCB.
The invention has the beneficial effects as follows, this direction arranged vertical fin that makes progress along thermal current, and with the structure of fin cross arrangement, compare with funnel type radiator of the prior art, its remarkable advantage is, heat in the great power LED passes to heat transfer sheet and fin by the matrix heat carrier, carries out heat exchange with air, and the heat of fin and fin is taken away.Air is taken away heat, and what are relevant with the surface area size of fin and fin.The surface area of fin is big more, and the heat of transmission is many more, and radiating effect is just high more.But limit by space and cost, the volume of radiator just is difficult to continue to increase.Therefore in order to continue to promote the radiating effect of radiator, have in the moulding of fin and quantitatively work hard.Fin or fin pitch are too small in actual applications, and it is full to be easy to be become silted up by laying dust, and are difficult for fully carrying out heat exchange with air at the heat of spacing, so fin asks and ask greatly more, but do not ask close.
In fin chiasma type heat spreader structures, the width up and down of fin and fin does not wait, and interleaved mode is arranged, a side narrower at width leaves enough spaces, even the spacing of fin is closeer, heat and surrounding air can be carried out sufficient heat exchange, and reduce temperature difference between radiator and the surrounding air, with the temperature that reduces to greatest extent in the great power LED, reduce the light decay of great power LED, indoor and outdoor general lighting and decorative lamp that can the implementation structure compactness.
Description of drawings
Fig. 1 is the structural representation of a kind of semi-conductor combined lamp of the prior art.
Fig. 2 is the structural representation of one embodiment of the invention.
Fig. 3 is the vertical view of the fin chiasma type radiator in embodiment illustrated in fig. 2.
Fig. 4 is the A-A half sectional view of Fig. 3.
Fig. 5 is the upward view of Fig. 3.
Fig. 6 is the structural representation of led driver.
1. lamp holders among the figure, 2.LED driver, 201. isolating transformers, 202.LED power supply PCB, 203. light-operated PCB, 3. insulation crust, 4. fin, 5. matrix heat carrier, 6. fin, 7. fin, 8. heat transfer sheet, 9. annular groove, 10. lampshade, 11. reflective mirrors, 12. great power LED, 13. fins, 14. light sensors, 15. fin chiasma type radiator, 16. radiator stands, 17. funnel type radiators.
The specific embodiment
By Fig. 2~shown in Figure 6, the present invention includes lamp holder 1, led driver 2, insulation crust 3, fin chiasma type radiator 15 and great power LED 12, wherein lamp holder 1 and led driver 2 are electrically connected with light sensor 14 and great power LED 12 respectively.Insulation crust 3 is provided with light sensor 14.Led driver 2 is surrounded by lamp holder 1, insulation crust 3, fin chiasma type radiator 15.According to the lamp installation instructions for use, also can be without lamp holder 1, power supply directly through insulation shell 3, is connected with led driver 2.
Fin chiasma type radiator 15 bottom surfaces are provided with ring groove 9, fixing great power LED 12 on the central plane of its ring groove 9, and surround great power LEDs 12 with reflective mirror 11, lampshade 10 is tightly connected with ring groove 9.This lampshade 10 is semi-circular, also can adopt plate or other shapes, as long as have the light transmittance height, and anti-dazzle, eye-protecting function gets final product.
Fin chiasma type radiator 15 is to be made of matrix heat carrier 5, fin 6, heat transfer sheet 8, fin 7, fin 13 and fin 4, and is integral with the aluminum high-pressure casting of heat conduction and perfect heat-dissipating.In matrix heat carrier 5, be provided with fin 6, and and the bottom surface of matrix heat carrier 5 and inwall on around the mode arranged vertical; On matrix heat carrier 5 outer walls, arrange heat transfer sheet 8 and fin 7 around distribution and vertical direction, heat transfer sheet 8 is to begin down to broaden gradually at the top of matrix heat carrier 5 outer walls or middle part, its width one fin 13 that regularly extends, fin 7 is to begin down to broaden gradually from the top, and begins to be connected to the end with the both sides, top of heat transfer sheet 8; The width of fin 4 is to narrow down from top to bottom, and is distributed between the heat transfer sheet 8, with fin 7 cross arrangements, and with matrix heat carrier 5 outer walls on be connected.
The size or its fixed form different of the power output of great power LED 12 and heat-radiating substrate (fin that LED carries or bolt), the number of the diameter of matrix heat carrier 5 and bottom shape and fin 6, heat transfer sheet 8 and fin 4 is then slightly different with size.
In the structure of led driver 2, light-operated PCB203 is fixed on the side of LED power supply PCB202, and is electrically connected with light sensor 14; Be fixed with the isolating transformer 201 of high frequency at the opposite side of LED power supply PCB202.
Claims (4)
1. a high power semiconductor lighting lamp comprises lamp holder, led driver, insulation crust, fin chiasma type radiator and great power LED, and wherein lamp holder, led driver and great power LED are electrically connected, and it is characterized in that:
Fin chiasma type radiator bottom surface is provided with ring groove, fixing great power LED on its ring groove central plane, and surround great power LED with reflective mirror, lampshade and ring groove are tightly connected; Insulation crust is provided with light sensor.
2. high power semiconductor lighting lamp according to claim 1 is characterized in that:
Described fin chiasma type radiator is made of matrix heat carrier, fin, heat transfer sheet, fin and fin; On matrix heat carrier inwall and bottom surface around and vertical row show fin; On matrix heat carrier outer wall around and the arranged vertical heat transfer sheet, the both sides, top and the end of heat transfer sheet are provided with fin, the width of its fin is to narrow down from top to bottom; The width of fin is to narrow down from top to bottom, and is distributed between the heat transfer sheet, with the fin cross arrangement, and with matrix heat carrier outer wall on be connected.
3. high power semiconductor lighting lamp according to claim 1 is characterized in that:
In the led driver structure, light-operated PCB is fixed on the side of LED power supply PCB, and is electrically connected with light sensor; Be fixed with the isolating transformer of high frequency at the opposite side of LED power supply PCB.
4. high power semiconductor lighting lamp according to claim 1 is characterized in that:
Fin chiasma type radiator forms with heat conduction and the good aluminum high-pressure casting of thermal diffusivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2007200703820U CN201043737Y (en) | 2007-05-29 | 2007-05-29 | High power semiconductor lighting lamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2007200703820U CN201043737Y (en) | 2007-05-29 | 2007-05-29 | High power semiconductor lighting lamp |
Publications (1)
Publication Number | Publication Date |
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CN201043737Y true CN201043737Y (en) | 2008-04-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNU2007200703820U Expired - Fee Related CN201043737Y (en) | 2007-05-29 | 2007-05-29 | High power semiconductor lighting lamp |
Country Status (1)
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CN (1) | CN201043737Y (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102095113A (en) * | 2011-03-09 | 2011-06-15 | 翁小翠 | Power type LED (Light Emitting Diode) lamp with high heat conducting property |
CN103528033A (en) * | 2013-10-01 | 2014-01-22 | 许富昌 | Integrally formed radiator of semiconductor light source lamp and manufacturing method thereof |
-
2007
- 2007-05-29 CN CNU2007200703820U patent/CN201043737Y/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102095113A (en) * | 2011-03-09 | 2011-06-15 | 翁小翠 | Power type LED (Light Emitting Diode) lamp with high heat conducting property |
CN102095113B (en) * | 2011-03-09 | 2012-06-20 | 翁小翠 | Power type LED (Light Emitting Diode) lamp with high heat conducting property |
CN103528033A (en) * | 2013-10-01 | 2014-01-22 | 许富昌 | Integrally formed radiator of semiconductor light source lamp and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
DD01 | Delivery of document by public notice |
Addressee: Jin Songshan Document name: Notification to Pay the Fees |
|
DD01 | Delivery of document by public notice |
Addressee: Jin Songshan Document name: Notification of Termination of Patent Right |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080402 Termination date: 20100529 |