CN200970857Y - Tool for drilling silicon single-crystal rod from irregular silicon briquette - Google Patents
Tool for drilling silicon single-crystal rod from irregular silicon briquette Download PDFInfo
- Publication number
- CN200970857Y CN200970857Y CN 200620149156 CN200620149156U CN200970857Y CN 200970857 Y CN200970857 Y CN 200970857Y CN 200620149156 CN200620149156 CN 200620149156 CN 200620149156 U CN200620149156 U CN 200620149156U CN 200970857 Y CN200970857 Y CN 200970857Y
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- sleeve
- silicon
- sleeve body
- screw
- silicon single
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Abstract
The utility model discloses a tool for drilling silicon single crystal rods from anormalous briquettes, which comprises a fixed mechanism for fixing a silicon briquette, a sleeve for drilling a silicon rod. The fixed mechanism comprises a mounting table, one side of the mounting table is arranged with a fixed dam, the other side of the mountinh table is arranged with a locking mechanism. The locking mechanism comprises a slide rail arranged on the mounting table and a moveable baffle matched with the slide rail. The baffle is connected with a screw by a helical pair. The screw is connected with the other fixed dam by a resolute pair. The other end of the screw is connected with a manual rotating wheel. A V-shaped block is arranged between the two dams to clip the silicon briquette. The sleeve comprises a sleeve body, an emery plating gob positioned at the lower opening of the sleeve body, the emery plating is arranged at the inner and outer sides of the lower edge of the sleeve body. The sleeve is also arranged with a cone arranged on the top of the sleeve body; the cone is arranged with a screw thread. The utility model has the advantages of that the raw material can be changed into the finished product without being melted back and drawn, which can greatly reduce the consuming of the labor and equipments, thus the economic benefits are very considerable.
Description
Technical field
The utility model relates to a kind of instrument that is used for working integrated circuit and other electron component semiconductor grade silicon single crystal body, and particularly a kind of never regular silico briquette drills through the instrument of silicon single crystal bar
Background technology
The major part of semiconductor silicon single crystal body is all with cutting krousky (Czochralski) manufactured.In this method, polysilicon is put in the quartzy crucible, heat fused then, will melt silicon and slightly do cooling, give certain degree of supercooling, the silicon single crystal body of a particular crystal orientation (being called seed crystal) is contacted with melt silicon, and temperature by adjusting melt and the seed crystal hoisting velocity that makes progress is when making seed body grow up to the close-target diameter, improve hoisting velocity, make the nearly permanent growth in thickness of monocrystal.In the last stage of growth course, the interior silicon melt not complete obiteration as yet of crucible this moment, by hoisting velocity that increases crystal and the heating load of adjusting to crucible crystal diameter is reduced to form a tail shape cone gradually, when sharp enough hour of cone, crystal will break away from melt, thereby finishes the growth course of crystal.
Silicon single crystal bar will be blocked into several sections after growing out, remove the back end to end of monocrystalline and according to the requirement sampling of standard, carry out electricity and structural behaviour test passes after, just can carry out the processing of following operation.Monocrystalline also is monocrystalline end to end usually in general, but because out-of-shape and weight are light usually just as the raw material of crystal growth, melts down use again.
Along with the enlarged diameter of crystal bar, now the weight of part is big end to end for silicon single crystal, adopts as the crystal more than 300 millimeters again and handles just very uneconomically end to end as the melt back material, and for the monocrystalline of larger diameter, the part end to end of monocrystalline is heavier especially.Need to provide a kind of for this reason and process the instrument of silicon single crystal rod end to end from silicon single crystal,
Summary of the invention
The purpose of this utility model provides and a kind ofly drills through the instrument of silicon single crystal bar from irregular silico briquette, and what make monocrystalline is able to efficient utilization end to end, reduces production costs.
For achieving the above object, the utility model is by the following technical solutions: this instrument that drills through silicon single crystal bar from irregular silico briquette comprises: the fixing fixed mechanism of silico briquette, drill through the sleeve of silicon rod, described fixed mechanism comprises: platform is installed, the side of platform of being installed is established a fixed dam, the opposite side of platform of being installed is established retaining mechanism, it comprises: be contained in the slide rail on the platform that is installed, the removable baffle plate that cooperates with slide rail, baffle plate is connected with screw pair with screw rod, screw rod is connected with revolute pair with another fixed dam, and the screw rod other end connects hand wheel, establishes between two baffle plates to clamp the V-block that silico briquette is used; Described sleeve comprises: sleeve body, and the diamond dust that is positioned at the sleeve body lower opening plates mouth, and diamond dust is plated in the inside and outside both sides, lower edge of sleeve body, also comprises the cone of upper cartridge, and cone is threaded.
The requirement that drills through silicon single crystal bar from irregular silico briquette mainly contains: guarantee that 1) part of taking out is complete; 2) it is smooth that the part surface that takes out is straight as far as possible; The part of 3) taking out satisfies certain diameter requirement; 4) can not there be implosion or other can observed crackle from the surface.Because the monocrystalline Head and Tail Shape is extremely irregular, therefore to from irregular silico briquette, drill through silicon single crystal bar in addition, will take into full account of the influence of monocrystalline shape end to end processing.
The utility model has the advantages that: the main economic benefit after this instrument uses is to make the monocrystalline that was merely able to be used as raw material originally to expect end to end and irregular monocrystalline or polycrystal material piece, can draw again and directly changed finished product into without melt back by raw material, reduced the consumption of other former enclosure materials such as manpower and equipment greatly, economic benefit is considerable.
Description of drawings
The schematic diagram of Fig. 1 silicon single crystal bar.
The schematic diagram of the each several part after Fig. 2 silicon single crystal bar blocks.
Fig. 3 a is used for fixing the fixed mechanism schematic diagram of silico briquette
The vertical view of Fig. 3 b Fig. 3 a
Fig. 4 is used for drilling through from silico briquette the tube-in-tube structure schematic diagram of silicon rod.
Fig. 5 is of the present utility model to install and use state diagram
Fig. 6 drills through the silicon rod schematic diagram that obtains from silico briquette.
The specific embodiment
Fig. 1 represents the common silicon single crystal bar shape that has end to end.Silicon single crystal bar carries out follow-up processing after will passing through segmentation, sampling, test passes again.Fig. 2 represents to be divided into silicon rod head, silicon rod afterbody, silicon rod centre after the segmentation.Monocrystalline blocks back, tail and handles as the raw material melt back usually.
Among Fig. 3 a, Fig. 3 b, 4 are the platform that is installed, and it is the V-type fixed block that a side of the platform that is installed is established a fixed dam 2,3, and quantity is two.The opposite side of platform of being installed is established retaining mechanism, and this mechanism comprises a removable baffle plate 8 that can move along slide rail 9, and baffle plate 8 and screw rod 6 are connected with screw pair, and screw rod 6 and another fixed dam 7 are connected with revolute pair, and the screw rod other end connects hand wheel 5.
Among Fig. 4,13 is the diamond dust plating mouth of sleeve body lower opening, and diamond dust is plated in the inside and outside both sides, lower edge of sleeve body, and than sleeve wall thickness 1～2mm, the granularity of diamond dust will satisfy processing request.12 is sleeve body, the bottom is a hollow cylindrical, the upper part taper is hollow, 11 is the upper cartridge cone, cooling water can directly enter the grinding position by sleeve inner in the process, takes away the silicon material that grinds, cone top threaded 10, be used for the connection between sleeve and the spin motor shaft, the import of cooling water is on motor shaft.Among Fig. 5, jacket casing is on irregular silico briquette, and irregular silico briquette is clamped by the V-type fixed block.During operation, find an opposite planar of silicon rod head, tail, according to the size of silicon rod head to be processed, tail, regulate the distance between two V-blocks, rotation hand wheel, locking silicon rod are also fixing end to end.The top of this sleeve connects rotating mechanism, and rotating mechanism drives sleeve, by the sleeve of rotation at a high speed irregular silicon rod head, tail is processed, and is taken out satisfactory silicon rod.
Claims (2)
1, a kind of never regular silico briquette drills through the instrument of silicon single crystal bar, it is characterized in that: it comprises the fixedly fixed mechanism of silico briquette, drill through the sleeve of silicon rod, described fixed mechanism comprises: the platform that is installed (4), the side of platform of being installed is established a fixed dam (2), the opposite side of platform of being installed is established retaining mechanism, described retaining mechanism comprises: be contained in the slide rail (9) on the platform that is installed, the removable baffle plate (8) that cooperates with slide rail, baffle plate (8) is connected with screw pair with screw rod (6), screw rod (6) is connected with revolute pair with another fixed dam (7), and the screw rod other end connects hand wheel (5), establishes to clamp the V-block that silico briquette is used between baffle plate (2) and baffle plate (8); Described sleeve comprises: sleeve body (12), be positioned at the diamond dust plating mouthful (13) of sleeve body lower opening, and diamond dust is plated in the inside and outside both sides, lower edge of sleeve body, also comprises the cone (11) of upper cartridge, cone threaded (10).
2, a kind of never regular silico briquette according to claim 1 drills through the instrument of silicon single crystal bar, it is characterized in that: described diamond dust plating mouth is than sleeve wall thickness 1～2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620149156 CN200970857Y (en) | 2006-10-27 | 2006-10-27 | Tool for drilling silicon single-crystal rod from irregular silicon briquette |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620149156 CN200970857Y (en) | 2006-10-27 | 2006-10-27 | Tool for drilling silicon single-crystal rod from irregular silicon briquette |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200970857Y true CN200970857Y (en) | 2007-11-07 |
Family
ID=38882113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620149156 Expired - Lifetime CN200970857Y (en) | 2006-10-27 | 2006-10-27 | Tool for drilling silicon single-crystal rod from irregular silicon briquette |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200970857Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101973078A (en) * | 2010-10-25 | 2011-02-16 | 镇江市港南电子有限公司 | Clamping device of silicon slice cutting device |
| CN102806609A (en) * | 2012-08-15 | 2012-12-05 | 四川欣蓝光电科技有限公司 | Efficient and low-cost hollow-out method for sapphire wafer bar |
-
2006
- 2006-10-27 CN CN 200620149156 patent/CN200970857Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101973078A (en) * | 2010-10-25 | 2011-02-16 | 镇江市港南电子有限公司 | Clamping device of silicon slice cutting device |
| CN102806609A (en) * | 2012-08-15 | 2012-12-05 | 四川欣蓝光电科技有限公司 | Efficient and low-cost hollow-out method for sapphire wafer bar |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: BEIJING GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120216 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120216 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20120216 Address after: 100088, 2, Xinjie street, Beijing Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
|
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20071107 |
|
| EXPY | Termination of patent right or utility model |