CN200952048Y - Program control crystal growing device - Google Patents
Program control crystal growing device Download PDFInfo
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- CN200952048Y CN200952048Y CN 200620105972 CN200620105972U CN200952048Y CN 200952048 Y CN200952048 Y CN 200952048Y CN 200620105972 CN200620105972 CN 200620105972 CN 200620105972 U CN200620105972 U CN 200620105972U CN 200952048 Y CN200952048 Y CN 200952048Y
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Abstract
The utility model relates to a full-automatic control crystal growth device capable of the programmed real-time control of furnace temperature and programmed record of changes in temperature field. The crystal growth device comprises a crystal oven, a crucible, a crystal bench and temperature control device, wherein the temperature control device comprises a single-chip microcomputer, a silicon controlled rectifier, a temperature probe, and a transformer. The single-chip microcomputer is connected with the temperature probe which is arranged inside the crystal growth furnace via a signal line, and connected with and controlled by a computer by a data line. The silicon controlled rectifier receives the control signals from the single-chip microcomputer via the signal lines and is connected with the transformer output via a power line. The transformer is connected with a heater arranged on the crystal growth furnace via a cable. The utility model is suitable for both crystal growth study and large-scale crystal production.
Description
Technical field
The utility model relates to a kind of cooking stove class device, and is especially a kind of by the computer-controlled cooking stove class device that is used for crystal growth.
Background technology
Crystal furnace is a productive manpower crystal visual plant, temperature in its burner hearth is generally controlled by the electric current that pre-sets by heating element, present state-of-the-art equipment has just added the temperature detection probe in burner hearth, read in the burner hearth after the temperature manual regulation heating element electric current.Real-time is poor, do not have comprehensive data logging, control process to need manual intervention, and whole process is quite loaded down with trivial details.
Summary of the invention
The purpose of this utility model is for a kind of crystal growing apparatus by the computer program controlled temperature is provided.
For realizing the purpose of this utility model, this specification sheets provides this crystal growing apparatus, comprise crystal furnace, crucible and crystal platform, wherein crystal furnace comprises body of heater, heating element and burner hearth, crucible is positioned on the crystal platform, is used for putting producing the crystalline raw material, and the crystal platform is positioned at the crystal furnace below, under its lifting device that carries control, can do vertical displacement movement, the crucible that raw material is housed on the crystal platform is sent in the crystal furnace burner hearth.
Temperature-control device comprises micro-chip, silicon controlled rectifier, temperature detection probe and transformer; Wherein micro-chip inserts power supply by the supply lead on the potentiostat, connects the temperature detection probe that places in the crystal furnace burner hearth by signal wire, connects computer by data line, controlled by computer program; Silicon controlled rectifier from the micro-chip incoming control signal, connects transformer output control by supply lead by signal wire; Transformer is by the heating element on the cable connection crystal furnace.
Temperature detection probe quantity in the crystal furnace burner hearth is 1-80.
This unit temp detection, control and gradient of temperature program can realize in real time control automatically according to the computer self-compiling program fully.According to the temperature sensor precision that adopts, the system temperature control accuracy can reach more than 0.01 ℃.
System adopts micro-chip that silicon controlled rectifier is controlled automatically, regulates output voltage by silicon controlled rectifier again.Owing to connect a transformer behind the silicon controlled rectifier, guaranteeing under the normal situation of thyristor operating angle that the temperature control system output voltage can change between hundreds of volts at several volts, adopt high power cable to be connected between transformer outward current and the crystal furnace.Exportable several amperes to hundreds of amperes of electric current.
Temperature control system can be gathered 1～80 data point simultaneously, and these data points can be distributed in different position in the single crystal growing furnace.Native system has overcome the shortcoming that present normally used temperature control system can only detect a data point, can be used for detecting the distribution situation of whole temperature field, that is, be not only temperature spot of monitoring.Native system has improved " transparency " of temperature gradient distribution in the crystal growing furnace, has improved the stability of crystal growth, and then has improved the yield rate of crystal growth.
The temperature control system data collection point also can be distributed in the different crystal growing furnaces, detects the temperature field distribution situation of several crystal growing furnaces simultaneously, to improve the working efficiency of system, applicable to the mass-producing crystal production.
Temperature control system is controlled the crystal growth furnace temperature by the transformer output rating, and transformer can connect a crystal growing furnace, also can connect a plurality of identical crystal growing furnaces, is used for the mass-producing crystal growth.
The temperature control system data are gathered by computer is whole-process automatic fully, can write down a plurality of key parameters such as output voltage, electric current, temperature and time, have overcome temperature control system data at present commonly used fully by the shortcoming of manual record.Omnidistance full-automatic thermograph can reflect the temperature variations of growth furnace in the crystal growth whole process fully, can reflect the unexpected volatilization that first-order phase transition situation in the crystal material process and melt may occur in this process, also can reflect the solid phase phase transformation situation that thermal change is arranged that may occur in the crystal growth temperature-fall period.The data gathering of these whole processes to optimize the crystal growth parameter, improve crystal growth technique, to improve the crystal yield rate very favourable.
The purpose of this utility model, feature and advantage will be in conjunction with the embodiments, are further described with reference to accompanying drawing.
Description of drawings
Fig. 1 is the utility model structural representation;
Wherein: 1 is crystal furnace, and 2 is heating element, and 3 is burner hearth, and 4 is crucible, and 5 is the crystal platform, and 6 is transformer, and 7 is silicon controlled rectifier, and 8 is micro-chip, and 9 are the temperature detection probe, and 10 is computer, and 11 is potentiostat.
Embodiment
With reference to last figure, provide following embodiment.To help to understand the utility model by embodiment, but not limit content of the present utility model.All distortion that those of ordinary skill in the art can directly derive or associate from the disclosed content of the utility model all should be thought protection domain of the present utility model.
Embodiment 1: this crystal growing apparatus, comprise crystal furnace 1, crucible 4 and crystal platform 5 and temperature-control device, wherein crystal furnace 1 comprises body of heater, heating element 2 and burner hearth 3, crucible 4 is positioned on the crystal platform 5, be used for putting production crystalline raw material, crystal platform 5 is positioned at crystal furnace 1 below, can do vertical displacement movement under its lifting device that carries control, and the crucible that raw material is housed 4 on the crystal platform 5 is sent in crystal furnace 1 burner hearth 3; Temperature-control device comprises micro-chip 8, silicon controlled rectifier 7, temperature detection probe 9 and transformer 6; Wherein micro-chip inserts power supply by the supply lead on the potentiostat 11, connects the temperature detection probe 9 that places in crystal furnace 1 burner hearth 3 by signal wire, connects computer 10 by data line, controlled by computer program; Silicon controlled rectifier 7 from micro-chip 8 incoming control signals, connects transformer 6 output controls by supply lead by signal wire; Transformer 6 is by the heating element 2 on the cable connection crystal furnace 1.
Embodiment 2: embodiment 1 described crystal growing apparatus has 20 temperature detection probes 9 in crystal furnace 1 burner hearth 3.
Embodiment 3: embodiment 1 described crystal growing apparatus has 80 temperature detection probes 9 in crystal furnace 1 burner hearth 3.
Claims (4)
1, a kind of program control crystal growing apparatus, comprise crystal furnace (1), crucible (4) and crystal platform (5), wherein crystal furnace (1) comprises body of heater, heating element (2) and burner hearth (3), crucible (4) is positioned on the crystal platform (5), be used for putting production crystalline raw material, crystal platform (5) is positioned at crystal furnace (1) below, under its lifting device that carries control, can do vertical displacement movement, the crucible that raw material is housed (4) on the crystal platform (5) is sent in crystal furnace (1) burner hearth (3), it is characterized in that: this crystal growing apparatus also comprises a temperature-control device, connects heating element (2) by cable.
2, crystal growing apparatus according to claim 1 is characterized in that: described temperature-control device comprises micro-chip (8), silicon controlled rectifier (7), temperature detection probe (9) and transformer (6); Wherein micro-chip inserts power supply by the supply lead on the potentiostat (11), connects the temperature detection probe (9) that places in crystal furnace (1) burner hearth (3) by signal wire, connects computer (10) by data line, controlled by computer program; Silicon controlled rectifier (7) from micro-chip (8) incoming control signal, connects transformer (6) output control by supply lead by signal wire; Transformer (6) is by the heating element (2) on the cable connection crystal furnace (1).
3, crystal growing apparatus according to claim 2 is characterized in that: described temperature detection probe (9) quantity is 1-80.
4, crystal growing apparatus according to claim 2 is characterized in that: described temperature detection probe (9) quantity is 20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620105972 CN200952048Y (en) | 2006-07-25 | 2006-07-25 | Program control crystal growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620105972 CN200952048Y (en) | 2006-07-25 | 2006-07-25 | Program control crystal growing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200952048Y true CN200952048Y (en) | 2007-09-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620105972 Expired - Fee Related CN200952048Y (en) | 2006-07-25 | 2006-07-25 | Program control crystal growing device |
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| CN (1) | CN200952048Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824648A (en) * | 2010-04-27 | 2010-09-08 | 中山大学 | Error processing system of automatic photoelectric crystal furnace and method thereof |
| CN102605424A (en) * | 2012-03-06 | 2012-07-25 | 浙江宏业新能源有限公司 | Control system for polysilicon ingot furnace and control method |
| CN103194803A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院上海硅酸盐研究所 | Auxiliary monitoring system suitable for high-temperature oxide crystal growth |
| CN103592950A (en) * | 2012-08-14 | 2014-02-19 | 西安西驰电气有限责任公司 | Crucible displacement control device |
| CN103592966A (en) * | 2012-08-14 | 2014-02-19 | 西安西驰电气有限责任公司 | Crucible rotation speed control device |
-
2006
- 2006-07-25 CN CN 200620105972 patent/CN200952048Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824648A (en) * | 2010-04-27 | 2010-09-08 | 中山大学 | Error processing system of automatic photoelectric crystal furnace and method thereof |
| CN101824648B (en) * | 2010-04-27 | 2013-01-16 | 中山大学 | Error processing system of automatic photoelectric crystal furnace and method thereof |
| CN102605424A (en) * | 2012-03-06 | 2012-07-25 | 浙江宏业新能源有限公司 | Control system for polysilicon ingot furnace and control method |
| CN103592950A (en) * | 2012-08-14 | 2014-02-19 | 西安西驰电气有限责任公司 | Crucible displacement control device |
| CN103592966A (en) * | 2012-08-14 | 2014-02-19 | 西安西驰电气有限责任公司 | Crucible rotation speed control device |
| CN103194803A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院上海硅酸盐研究所 | Auxiliary monitoring system suitable for high-temperature oxide crystal growth |
| CN103194803B (en) * | 2013-03-22 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Be applicable to the auxiliary monitoring system of high-temp oxide crystal growth |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |