CN1996629A - LED with the current transfer penetration-enhanced window layer structure - Google Patents
LED with the current transfer penetration-enhanced window layer structure Download PDFInfo
- Publication number
- CN1996629A CN1996629A CNA200610169829XA CN200610169829A CN1996629A CN 1996629 A CN1996629 A CN 1996629A CN A200610169829X A CNA200610169829X A CN A200610169829XA CN 200610169829 A CN200610169829 A CN 200610169829A CN 1996629 A CN1996629 A CN 1996629A
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- current
- light
- window layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000035515 penetration Effects 0.000 title claims description 40
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 26
- 230000000694 effects Effects 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000005622 photoelectricity Effects 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 21
- 238000002360 preparation method Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
This invention relates to one light diode of current streghening window layer structure in semiconductor photo electricity technique, which comprises top electrode, current extensive layer, top limit layer, source area, down limit layer, buffer layer, underlay, down electrode, DBR reflection layer, wherein, the top electrode ad current extensive layer are set with conductive transparent layer; the current block layer is set on or down extensive layer to form current transporting window layer by transparent layer, current extensive layer and current block layer.
Description
Technical field
The current transfer penetration-enhanced window layer structure of introducing in light-emitting diode (LED) relates to a kind of new LED device architecture, belongs to field of semiconductor photoelectron technique.
Background technology
At present, the method for designing of common formal dress structure light-emitting diode and the problem of existence thereof: generally adopt metal organic chemical vapor deposition (MOCVD) to carry out epitaxial growth, device architecture includes from top to bottom top electrode 10, current extending 20, upper limiting layer 30, active area 400, lower limit layer 50, resilient coating 60, substrate 70, the bottom electrode 80 of the storied length of longitudinal layer successively as shown in Figure 1.By injection current, electron hole pair is luminous in the active area radiation recombination, and the photon of generation emits from the front of device.Three subject matters that this kind device exists are:
1. absorb substrate (as GaAs, Si etc.) to luminescent material (as AlGaInP, GaN, ZnO etc.) light of Chan Shenging has strong absorption, make the light that is transmitted into the substrate direction almost be absorbed entirely, finally send, had a strong impact on the further raising of device performance with the form of heat;
2. the refractive index of the refractive index of Window layer material and air differs bigger, and it is external that the light that is transmitted into the device upper surface has only a very little part (about 5%) to be transmitted into, and remaining light overwhelming majority all is reflected and is absorbed by substrate, and the extraction efficiency of light is very low;
3. the ratio that accounts for total injection current of the vertical transport electric current under the electrode (is looked chip size quite greatly, the quality of electrode size and current extending and different), the light that this part electric current produces is because the stopping and absorbs of electrode, not only can not be transmitted into externally, generates heat in vivo on the contrary.
At present, at the problem that substrate absorbs, the way that people propose is: distribution bragg emission (DBR) layer of the high reflection of growth between substrate and lower limit layer, can reflect the light of Vertical Launch to the substrate direction, to improve the extraction efficiency of light, as shown in Figure 2.In order to solve the bigger problem of Window layer refractive index, the someone passes through the way of growth anti-reflection film on Window layer, can effectively increase light extraction efficiency, as shown in Figure 3; Another way is the Window layer by grow thick, promptly thick current extending 12, for example: the GaP Window layer of about 50 μ m, as Fig. 4, both increased the expansion of electric current, help the bright dipping of front and side again, improved light extraction efficiency greatly.About solving the bigger problem of electrode below current density, there is the people once to propose between upper limiting layer and current extending, to make the method for current barrier layer abroad, as shown in Figure 5, this method has stopped that effectively electric current directly transports from electrode downwards, increases the expansion of electric current, has improved luminous efficiency, but, the technology that they adopt nearly all is the way of secondary epitaxy, cost height, apparatus expensive.Though above-mentioned four kinds of methods can both be from solving the problem that present light-emitting diode exists in a certain respect, they all can't solve three problems of existence simultaneously.
Summary of the invention
The purpose of this invention is to provide a kind of light-emitting diode with current transfer penetration-enhanced window layer structure, the light that solve simultaneously that substrate absorbs, the refractive index of the refractive index of Window layer material and air differs the electric current generation under big, the electrode is stopped by electrode and absorbs this three problems, to improve light extraction efficiency, thereby obtain light-emitting diode efficient, high brightness, its manufacture craft is simple, and cost is low.
The device part comprises among the present invention: the top electrode 10 of the storied length of longitudinal layer, current extending 20, upper limiting layer 30, active area 400, lower limit layer 50, resilient coating 60, substrate 70, bottom electrode 80 successively from top to bottom, between top electrode 10 and current extending 20, be provided with conductive euphotic zone, also comprise being arranged on the following or top current barrier layer 120 in current extending 20 the insides, form the current transfer Window layer by conductive euphotic zone, current extending 20 and current barrier layer 120 combinations.
Light-emitting diode with current transfer penetration-enhanced window layer structure of the present invention, can be Fig. 6, Fig. 8 and structure shown in Figure 10, include the p-type top electrode 100 of vertically stacked (seeing from top to bottom) respectively, p-type conductive euphotic zone 130, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600 and n-type substrate 700, n-type bottom electrode 800, current barrier layer 120 are separately positioned on above the p-type current extending 20, the inside and below.By the p-type conductive euphotic zone 130 that is arranged in order, current barrier layer 120 and thin p-type current extending 200, constitute p-type current transfer penetration-enhanced window layer 140.Fig. 7, Fig. 9 and Figure 11 are structurally Duoed a n-type DBR reflector layer 900 than Fig. 6, Fig. 8 and Figure 10 respectively.The light-emitting diode of this current transfer penetration-enhanced window layer structure is characterised in that: because the existence of current barrier layer 120 and conductive euphotic zone 130 is arranged, the electric current that injects from electrode is very natural expand to electrode around, stoped electric current under the p-type electrode 100 directly toward current downflow; The introducing of p-type conductive euphotic zone 130 has brought two effects, the one, increased the angle of bright dipping, the photon that makes active area produce more can be transmitted into external, the 2nd, increased the expansion of electric current, so, just can reduce the thickness of p-type current extending 200 greatly, thereby reduce cost.The p-type current transfer penetration-enhanced window layer 140 that p-type conductive euphotic zone 130, current barrier layer 120 and thin p-type current extending 200 combinations form, increased the expansion of electric current, stoped electric current under electrode, to flow, reduced current loss, reduced hot generation, also played simultaneously light has been carried out anti-reflection effect, so the introducing of this current transfer penetration-enhanced window layer structure has improved light extraction efficiency and the hot saturation characteristic of LED.Experimental result shows that under the 20mA injection current, the light intensity of LED has improved about 70%, and the operate in saturation electric current has increased more than the 20mA.
Light-emitting diode with current transfer penetration-enhanced window layer structure of the present invention, can also include the n-type top electrode 100 of vertically stacked (seeing from top to bottom) respectively, n-type conductive euphotic zone 131, n-type current extending 201, n-type upper limiting layer 301, active area 400, p-type lower limit layer 501, p-type resilient coating 601 and p-type substrate 701, p-type bottom electrode 801, current barrier layer 120 are separately positioned on above the n-type current extending 201, the inside and below.By the n-type conductive euphotic zone 131 that is arranged in order, current barrier layer 120 and thin n-type current extending 201, constitute n-type current transfer penetration-enhanced window layer 141.Figure 12 has provided current barrier layer 120 and has been arranged on structure above the n-type current extending 201, and Figure 13 is Duoed p-type DBR reflector layer 901 that is arranged between p-type lower limit layer 501 and the p-type resilient coating 601 than the structure of Figure 12.
The top of current transfer penetration-enhanced window layer can also be introduced the structure that anti-reflection film, surface coarsening layer etc. can play anti-reflection effect to luminous energy among the present invention.
The used material of conductive euphotic zone among the present invention can be ITO (tin indium oxide), the material that electroconductive resin also can be other can conduct electricity, printing opacity can play anti-reflection effect again to light.As: among the AlGaInP LED, the ITO layer of refractive index between GaP and air.
Among the present invention the material of current barrier layer 120 can be intrinsic semiconductor, non-conductive resin, the amorphous Si that undopes, Si
xN
yAnd Si
xO
yDeng insulating material, also can be electric conducting material with the conductive euphotic zone conductivity type opposite.
What the shape of current barrier layer 120 and size can be with electrodes among the present invention is identical, the identical of electrode of also can getting along well.
Among the present invention current barrier layer 120 can be made in current extending the inside, top or below.
The light-emitting diode of current transfer Window layer electrode structure can be introduced DBR reflector layer 90 or compound dbr structure among the present invention, also can not introduce, and also can be inverted structure minute surface total reflection structure or partial reflection structure.
Its device architecture of light-emitting diode of current transfer Window layer electrode structure among the present invention n type is as described above descending, the p type is last, i.e. growth LED structure on n type substrate, also can be that the p type is following, the n type is last, promptly on p type substrate growth with above the device architecture put upside down of device architecture, and the novel conductive photic zone is the n type.
The shape of top electrode 10 can be other shapes such as circle, star, bar shaped, slotting finger-type among the present invention, and the pressure welding point diameter can be 100 μ m, 80 μ m or other size, and material can be AuZnAu, also can be other electrode material.
The substrate 70 of the light-emitting diode of current transfer Window layer electrode structure can be the GaAs of forward LED among the present invention, and Si etc. are to the material of visible absorption, also can be the translate substrate material such as copper, gold, Si of flip-chip bonded structure.
N-type electrode 800 can be the AuGeNi of AlGaInP LED among the present invention, also can be the n-type electrode material of the LED of other material system.
The die area of the light-emitting diode of current transfer Window layer electrode structure can be 225 μ m * 225 μ m among the present invention, and 200 μ m * 200 μ m also can be other sizes.
Main advantages of the present invention:
1) current barrier layer 120 among the current transfer penetration-enhanced window layer LED can reduce even stop fully the current transfer under the electrode effectively, and change the conductive window layer of electric current around the electrode into laterally transport expansion, thereby luminous efficiency and light extraction efficiency have been improved, under the same terms, the extraction efficiency of device even can double above.
2) conductive euphotic zone among the current transfer penetration-enhanced window layer LED has not only strengthened laterally transporting of injection current and has expanded, and has also played light is carried out anti-reflection effect, and the photon that makes active area produce more is transmitted into external.
3) combining of current barrier layer 120 and conductive euphotic zone strengthened laterally transporting and expanding of electric current, thereby reduced the thickness of current extending 20, reduced growth time, thereby saved raw material, reduced device cost.
4) the MOCVD epitaxial growth time of device was reduced to 3 hours by original 4-5 hour, and only the finishing of device preparation that grow into of entire device needs about 12 hours, and technology is simple, and technological process is short.
5),, help work under the big electric current more so device has better hot saturation characteristic because electric current laterally transports with expansion and is enhanced, and no current flows under the electrode does not produce the light and heat that can't export.
6) because the existence of current barrier layer 120 and thin and strong current extending 20, device size reduces and will not cause reducing of light intensity and luminous power, can obtain the LED of high light large power output under the small size chip, can improve the output and the output value greatly.
7) have the current transfer penetration-enhanced window layer structure light-emitting diode, the significant advantage that has is: current loss is little, brightness height, light efficiency height; Manufacture craft is simple, good reproducibility; Device size is little, output value height, and cost is low, is suitable for producing in enormous quantities.
Description of drawings
Fig. 1: the structural representation of common formal dress structure light-emitting diode;
Fig. 2: the structural representation that has the formal dress structure light-emitting diode of DBR reflector layer
Fig. 3: the structural representation that has the formal dress structure light-emitting diode of anti-reflection film
Fig. 4: the structural representation of introducing the formal dress structure light-emitting diode of thick current extending
Fig. 5: the structural representation of introducing the formal dress structure light-emitting diode of current barrier layer by secondary epitaxy technology
Fig. 6: formal dress light-emitting diode structure schematic diagram (barrier layer places the top of current extending) with current transfer Window layer electrode structure
Fig. 7: have current transfer penetration-enhanced window layer structure formal dress light-emitting diode structure schematic diagram (current barrier layer 120 place current extending 200 above, between n-type lower limit layer 500 and n-type resilient coating 600, introduced DBR reflector layer 900)
Fig. 8: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-type current extending 200) with current transfer penetration-enhanced window layer structure
Fig. 9: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-current extending 200, has introduced DBR reflector layer 900 between n-type lower limit layer 500 and n-type resilient coating 600) with current transfer penetration-enhanced window layer structure
Figure 10: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the following of p-current extending 200) with current transfer penetration-enhanced window layer structure
Figure 11: have current transfer penetration-enhanced window layer structure formal dress light-emitting diode structure schematic diagram (current barrier layer 120 place p-current extending 200 below, between n-type lower limit layer 500 and n-type resilient coating 600, introduced DBR reflector layer 900)
Figure 12: structural representation (current barrier layer 120 places the top of n-type current extending 131) with inverted light-emitting diode (LED) of current transfer penetration-enhanced window layer structure
Figure 13: have the inverted light-emitting diode (LED) of current transfer penetration-enhanced window layer structure structural representation (current barrier layer 120 place n-type current extending 131 above, between p-type lower limit layer 501 and p-type resilient coating 601, introduced DBR reflector layer 901)
Among the figure: 10 is top electrode, and 20 is current extending, and 30 is upper limiting layer, 400 is active area, and 50 is lower limit layer, and 60 is resilient coating, 70 is substrate, and 80 is bottom electrode, and 90 is the DBR reflector layer, 11 is anti-reflection film, and 12 is thick current extending, and 120 is current barrier layer,, 130-p-type conductive euphotic zone, 131-n-type conductive euphotic zone, 100 is p-type top electrode, 200 is p-type current extending, and 300 is p-type upper limiting layer, and 500 is n-type lower limit layer, 600 is n-type resilient coating, 700 is n-type substrate, and 800 is n-type bottom electrode, and 900 is n-type DBR reflector layer, 140 is p-type current transfer penetration-enhanced window layer, 101 is n-type top electrode, and 201 is n-type current extending, and 301 is n-type upper limiting layer, 501 is p-type lower limit layer, 601 is p-type resilient coating, and 701 is p-type substrate, and 801 is p-type bottom electrode, 901 is p-type DBR reflector layer, and 141 is n-type current transfer penetration-enhanced window layer.
Embodiment
Embodiment 1
As shown in Figure 6, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type bottom electrode 800, and the p-type current transfer penetration-enhanced window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1, on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
2, concrete processing step is: at first epitaxial wafer is cleaned, utilize the deposit one deck SiO on p-type current extending 200 of coupled plasma chemical gas-phase deposition enhanced (PECVD) system then
2Next insulating barrier makes current barrier layer 120 by lithography, and evaporation last layer ITO conduction light transmissive material forms p-type conductive euphotic zone 130 again, by these steps, has finished the making of p-type current transfer penetration-enhanced window layer 140;
3, next, at front evaporation layer of Au ZnAu metal level, and make p-type electrode 100 by lithography, whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base;
4, between p-type electrode 100 and n-type electrode 800, add electric current, just can realize AlGaInP light-emitting diode luminous of efficient high brightness.Example: under the 20mA injection current, the axial luminous intensity of single tube reaches 140mcd, and dominant wavelength is about 625nm, and light efficiency reaches 91m/W, and does not have the light efficiency of the device of current transfer penetration-enhanced window layer only to be 41m/W.
Embodiment 2
As shown in Figure 7, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type bottom electrode 800, n-type DBR reflector layer 900, and the p-type current transfer penetration-enhanced window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1. on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type DBR reflector layer 900, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
2. concrete processing step is: at first epitaxial wafer is cleaned, utilize the deposit one deck SiO on p-type current extending 200 of PECVD (coupled plasma chemical gas-phase deposition enhanced) system then
2Next insulating barrier makes current barrier layer 120 by lithography, and evaporation last layer ITO conduction light transmissive material by these steps, has been finished the making of p-type current transfer Window layer 140 again;
3. next, at front evaporation layer of Au ZnAu metal level, and make p-type electrode 100 by lithography, whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base; From epitaxial wafer grow into device preparation finished common need 12 hours, process time is short.
4. between p-type electrode 100 and n-type electrode 800, add electric current, just can realize AlGaInP light-emitting diode luminous of efficient high brightness.Example: under the 20mA injection current, the axial luminous intensity of single tube reaches 200mcd, and dominant wavelength is about 625nm.
Embodiment 3
As shown in Figure 8, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type electrode 800, n-type DBR reflector layer 900, and the p-type current transfer Window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1. on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
2. the way by back technology again: at first epitaxial wafer is cleaned, whirl coating makes the zone that will do the barrier layer by lithography, band glue wet etching, and corrosion depth is identical with the thickness of p-type current extending 200, utilizes the PECVD system at surface deposition one deck SiO then
2Insulating barrier, thickness is identical with corrosion depth, next, peels off, and has obtained current barrier layer 120, and evaporation last layer ITO conduction light transmissive material by these steps, has been finished the making of current transfer penetration-enhanced window layer 140 again;
3. next, at front evaporation layer of Au ZnAu metal level, and make p-type electrode 100 by lithography, whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base;
Device shown in Figure 9 is structurally Duoed the n-type DBR reflector layer 900 of a growth between n-type lower limit layer 500 and n-type resilient coating 600 than Fig. 8, and technologic unique difference is many growths of MOCVD when growth one deck n-type DBR reflector layers 900.
Embodiment 4
As shown in figure 10, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type electrode 800, and the p-type current transfer Window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1. on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
Again by the back technology way: at first epitaxial wafer is cleaned, whirl coating also makes the zone that will do the barrier layer by lithography, the way of utilizing ion to inject is injected the ion that can play barrier effect in this zone, form current barrier layer 120, remove photoresist and clean, evaporation last layer ITO conduction light transmissive material by these steps, has been finished the making of current transfer penetration-enhanced window layer 140 then;
3. next, way with evaporation is evaporated layer of Au ZnAu metal level in the front, and makes p-type top electrode 100 by lithography, and whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type bottom electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base.
Device shown in Figure 11 is structurally Duoed the n-type DBR reflector layer 900 of a growth between n-type lower limit layer 500 and n-type resilient coating 600 than Figure 10, and technologic unique difference is many growths of MOCVD when growth one deck n-type DBR reflector layers 900.
Embodiment 5
As shown in figure 12, be example with AIGaInP LED.This device is made up of following each several part: n-type electrode 101, n-type current extending 201, n-type upper limiting layer 301, active area 400, p-type lower limit layer 501, p-type resilient coating 601, p-type substrate 701, p-type electrode 801, and the n-type current transfer Window layer 141 that constitutes by n-type conductive euphotic zone 130, current barrier layer 120 and n-type current extending 201; Its preparation process and method are as follows:
1. on the p-type substrate 701 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth p-type resilient coating 601 successively, p-type lower limit layer 501, active area 400, n-type upper limiting layer 301, n-type current extending 201 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
2. concrete processing step is: at first epitaxial wafer is cleaned, utilize the deposit one deck SiO on n-type current extending 201 of PECVD (coupled plasma chemical gas-phase deposition enhanced) system then
2Next insulating barrier makes current barrier layer 120 by lithography, and evaporation last layer ITO conduction light transmissive material by these steps, has been finished the making of n-type current transfer penetration-enhanced window layer 141 again;
3. next, way with evaporation is evaporated layer of Au GeNi metal level in the front, and makes n-type electrode 101 by lithography, and whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au ZnAu at this of attenuate then and form p-type electrode 801, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base.
Device shown in Figure 13 is structurally Duoed the p-type DBR reflector layer 901 of a growth between p-type lower limit layer 501 and p-type resilient coating 601 than Figure 12, and technologic unique difference is many growths of MOCVD when growth one deck p-type DBR reflector layers 901.
Claims (9)
1, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure, include from top to bottom the top electrode of the storied length of longitudinal layer (10) successively, current extending (20), upper limiting layer (30), active area (400), lower limit layer (50), resilient coating (60), substrate (70), bottom electrode (80), it is characterized in that, between top electrode (10) and current extending (20), be provided with conductive euphotic zone, also comprise being arranged on the following or top current barrier layer (120) in current extending (20) the inside, by conductive euphotic zone, current extending (20) and current barrier layer (120) are in conjunction with forming the current transfer Window layer.
2, the light-emitting diode of a kind of current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, introduces DBR reflector layer (90) or compound dbr structure between lower limit layer (50) and resilient coating (60).
3, a kind of light-emitting diode according to claim 1 and 2 with current transfer penetration-enhanced window layer structure, it is characterized in that, described top electrode (10) is a p-type top electrode (100), current extending (20) is a p-type current extending (200), upper limiting layer (30) is a p-type upper limiting layer (300), lower limit layer (50) is a n-type lower limit layer (500), resilient coating (60) is a n-type resilient coating (600), bottom electrode (80) is a n-type bottom electrode (800), conductive euphotic zone is a p-type conductive euphotic zone (130), by p-type conductive euphotic zone (130), p-type current extending (200) and current barrier layer (120) are in conjunction with forming current transfer Window layer (140).
4, a kind of light-emitting diode according to claim 1 and 2 with current transfer Window layer electrode structure, it is characterized in that, described top electrode (10) is a n-type top electrode (101), current extending (20) is a n-type current extending (201), upper limiting layer (30) is a n-type upper limiting layer (301), lower limit layer (50) is a p-type lower limit layer (501), resilient coating (60) is a p-type resilient coating (601), bottom electrode (80) is a p-type bottom electrode (801), conductive euphotic zone is a n-type conductive euphotic zone (131), by n-type conductive euphotic zone (131), n-type current extending (201) and current barrier layer (120) are in conjunction with forming current transfer Window layer (141).
5, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, introducing can be played the structure of anti-reflection effect to luminous energy on the current transfer penetration-enhanced window layer.
6, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, the used material of conductive euphotic zone be can conduct electricity, material that printing opacity can play anti-reflection effect again to light.
7, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, the material of current barrier layer (120) is the material of insulating material or conduction type and conductive euphotic zone conductivity type opposite.
8, a kind of light-emitting diode according to claim 1 with current transfer penetration-enhanced window layer structure, it is characterized in that, the structure of active area (400) is a p-n junction, or the p-i-n knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, or superlattice structure, or the quantum dot light emitting structure, or multiple layer hetero quantum point structure, or above-mentioned various combination in any structure.
9, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, substrate (70) is the material to visible absorption of forward LED, or the translate substrate material of flip-chip bonded structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610169829XA CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
| PCT/CN2007/003953 WO2008083562A1 (en) | 2006-12-29 | 2007-12-29 | A kind of light emitting diodes with the window layer structure of current spreading and light anti-reflecting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610169829XA CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1996629A true CN1996629A (en) | 2007-07-11 |
| CN100438110C CN100438110C (en) | 2008-11-26 |
Family
ID=38251625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200610169829XA Expired - Fee Related CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100438110C (en) |
| WO (1) | WO2008083562A1 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008083562A1 (en) * | 2006-12-29 | 2008-07-17 | Beijing University Of Technology | A kind of light emitting diodes with the window layer structure of current spreading and light anti-reflecting |
| WO2010051680A1 (en) * | 2008-11-07 | 2010-05-14 | Shen Guangdi | Led which has current barrier layer distributed corresponding to upper electrodes and the fabricating method thereof |
| CN101807647A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Process for manufacturing AlGaInP light-emitting diode with inclined side face |
| CN101834249A (en) * | 2010-04-23 | 2010-09-15 | 沈光地 | Current transport structure in thin-film type light-emitting diode and preparation method thereof |
| CN101969089A (en) * | 2010-09-06 | 2011-02-09 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride-based light-emitting diode with current barrier layer |
| CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
| CN102208504A (en) * | 2011-05-10 | 2011-10-05 | 北京太时芯光科技有限公司 | Quaternary light emitting diode and preparation method thereof |
| CN101807634B (en) * | 2009-02-17 | 2012-04-04 | 罗信明 | High-brightness light emitting diode chip |
| WO2014056354A1 (en) * | 2012-10-11 | 2014-04-17 | 光达光电设备科技（嘉兴）有限公司 | Semiconductor luminous element and process for manufacturing same |
| CN105679896A (en) * | 2016-03-28 | 2016-06-15 | 扬州乾照光电有限公司 | Gallium arsenide-based low-brightness yellow light-emitting diode chip and manufacturing method thereof |
| CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
| CN108604622A (en) * | 2016-02-02 | 2018-09-28 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package including light-emitting component |
| CN110993766A (en) * | 2015-02-17 | 2020-04-10 | 新世纪光电股份有限公司 | Light emitting element |
| CN112909140A (en) * | 2019-12-04 | 2021-06-04 | 聚灿光电科技（宿迁）有限公司 | Novel high-luminous-efficiency chip with double ITO conductive layers and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101134720B1 (en) | 2009-02-16 | 2012-04-13 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| JP2856374B2 (en) * | 1992-02-24 | 1999-02-10 | シャープ株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| JP3216700B2 (en) * | 1996-05-22 | 2001-10-09 | サンケン電気株式会社 | Semiconductor light emitting device |
| JPH114020A (en) * | 1997-04-15 | 1999-01-06 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and semiconductor light-emitting device |
| US6057562A (en) * | 1997-04-18 | 2000-05-02 | Epistar Corp. | High efficiency light emitting diode with distributed Bragg reflector |
| US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
| JPH11135834A (en) * | 1997-10-27 | 1999-05-21 | Matsushita Electric Ind Co Ltd | Light-emitting diode device and manufacture thereof |
| GB2344457B (en) * | 1998-12-02 | 2000-12-27 | Arima Optoelectronics Corp | Semiconductor devices |
| CN1201410C (en) * | 2000-07-13 | 2005-05-11 | 詹世雄 | High-brightness LED unit and its making method |
| CN1365153A (en) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | Light-emitting diode |
| JP4054631B2 (en) * | 2001-09-13 | 2008-02-27 | シャープ株式会社 | Semiconductor light emitting device and method for manufacturing the same, LED lamp, and LED display device |
| JP2004128452A (en) * | 2002-07-31 | 2004-04-22 | Shin Etsu Handotai Co Ltd | Method of manufacturing light emitting device, and light emitting device |
| US6958494B2 (en) * | 2003-08-14 | 2005-10-25 | Dicon Fiberoptics, Inc. | Light emitting diodes with current spreading layer |
| JP2005159299A (en) * | 2003-10-30 | 2005-06-16 | Sharp Corp | Semiconductor light emitting element |
| CN100438110C (en) * | 2006-12-29 | 2008-11-26 | 北京太时芯光科技有限公司 | LED with the current transfer penetration-enhanced window layer structure |
-
2006
- 2006-12-29 CN CNB200610169829XA patent/CN100438110C/en not_active Expired - Fee Related
-
2007
- 2007-12-29 WO PCT/CN2007/003953 patent/WO2008083562A1/en active Application Filing
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008083562A1 (en) * | 2006-12-29 | 2008-07-17 | Beijing University Of Technology | A kind of light emitting diodes with the window layer structure of current spreading and light anti-reflecting |
| WO2010051680A1 (en) * | 2008-11-07 | 2010-05-14 | Shen Guangdi | Led which has current barrier layer distributed corresponding to upper electrodes and the fabricating method thereof |
| CN101807634B (en) * | 2009-02-17 | 2012-04-04 | 罗信明 | High-brightness light emitting diode chip |
| CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
| CN101807647A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Process for manufacturing AlGaInP light-emitting diode with inclined side face |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
| CN101834249A (en) * | 2010-04-23 | 2010-09-15 | 沈光地 | Current transport structure in thin-film type light-emitting diode and preparation method thereof |
| CN101969089A (en) * | 2010-09-06 | 2011-02-09 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride-based light-emitting diode with current barrier layer |
| CN102208504A (en) * | 2011-05-10 | 2011-10-05 | 北京太时芯光科技有限公司 | Quaternary light emitting diode and preparation method thereof |
| WO2014056354A1 (en) * | 2012-10-11 | 2014-04-17 | 光达光电设备科技（嘉兴）有限公司 | Semiconductor luminous element and process for manufacturing same |
| CN110993766A (en) * | 2015-02-17 | 2020-04-10 | 新世纪光电股份有限公司 | Light emitting element |
| CN108604622A (en) * | 2016-02-02 | 2018-09-28 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package including light-emitting component |
| CN105679896A (en) * | 2016-03-28 | 2016-06-15 | 扬州乾照光电有限公司 | Gallium arsenide-based low-brightness yellow light-emitting diode chip and manufacturing method thereof |
| CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
| CN112909140A (en) * | 2019-12-04 | 2021-06-04 | 聚灿光电科技（宿迁）有限公司 | Novel high-luminous-efficiency chip with double ITO conductive layers and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008083562A1 (en) | 2008-07-17 |
| CN100438110C (en) | 2008-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100438110C (en) | LED with the current transfer penetration-enhanced window layer structure | |
| CN201060869Y (en) | LED with current transport anti-reflecting window layer structure | |
| CN101009353B (en) | LED with current-transfer enhanced window layer and the high reflection graph shift substrate structure | |
| CN101740691A (en) | High-power gallium nitride based LED with novel structure | |
| CN202004040U (en) | LED chip based on double-side substrate with concave holes and component-gradient buffer layer | |
| WO2010051680A1 (en) | Led which has current barrier layer distributed corresponding to upper electrodes and the fabricating method thereof | |
| CN108091743A (en) | A kind of yellow light flip LED epitaxial structure and preparation method thereof | |
| CN1885579A (en) | Light-emitting diode structure based on GaN/sapphire transparent substrate and preparation method | |
| CN101834249A (en) | Current transport structure in thin-film type light-emitting diode and preparation method thereof | |
| CN105932131A (en) | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof | |
| CN201699049U (en) | Film type light-emitting diode of double-current blocking layer current transportation structure | |
| CN206003793U (en) | A kind of copper base high brightness AlGaInP light emitting diode | |
| CN201349018Y (en) | Distribution of current barrier layer and light-emitting diode corresponding to top electrode | |
| JP3685977B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN109037267B (en) | Metal photonic crystal coupling enhanced nano-LED array and manufacturing method thereof | |
| CN112219286A (en) | Tunneling junction for multi-junction LED, multi-junction LED and preparation method of multi-junction LED | |
| CN111819702A (en) | Infrared light-emitting diode | |
| CN107482098B (en) | Thin film LED chip structure | |
| CN102983232B (en) | The manufacture method of vertical type light emitting diode | |
| CN113851563B (en) | Thin film type semiconductor chip structure and photoelectric device using same | |
| CN214428644U (en) | LED chip structure with double-layer protection at step | |
| CN101714605B (en) | AlGaInp system LED chip with current regulating layer and preparing method thereof | |
| CN211957671U (en) | Novel yellow green light LED epitaxial wafer | |
| CN105322062B (en) | A kind of p faces carry the reversed polarity AlGaInP light emitting diode construction in DBR reflecting layer | |
| CN205790047U (en) | A kind of vertical stratification AlGaInP based light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: No. 1 North Ze street, Beijing Economic Development Zone, Beijing Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer 1-4 Southern zip code: 100176 Patentee before: Beijing TimesLED Technology Co.,Ltd. |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: LED with the current transfer penetration-enhanced window layer structure Effective date of registration: 20140404 Granted publication date: 20081126 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing TimesLED Technology Co.,Ltd. Registration number: 2014990000234 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20160705 Granted publication date: 20081126 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing TimesLED Technology Co.,Ltd. Registration number: 2014990000234 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20151229 |
|
| EXPY | Termination of patent right or utility model |