CN1201410C - High-brightness LED unit and its making method - Google Patents
High-brightness LED unit and its making method Download PDFInfo
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- CN1201410C CN1201410C CNB001210408A CN00121040A CN1201410C CN 1201410 C CN1201410 C CN 1201410C CN B001210408 A CNB001210408 A CN B001210408A CN 00121040 A CN00121040 A CN 00121040A CN 1201410 C CN1201410 C CN 1201410C
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Abstract
The present invention relates to a high-brightness LED unit and a making method thereof, which particularly relates to an LED unit of aluminum phosphide gallium indium with a selective high adulteration and low resistance layer. The selective high adulteration and low resistance layer takes the existing multi-crystal technique as a foundation, and the present invention can be produced in a mass way, and the present invention has industrial value.
Description
The present invention relates to a kind of high brightness LED and preparation method thereof, particularly relate to a kind of light-emitting diode with the highly doped conductive formation of selectivity.
In III, V compound semiconductor, except nitride, direct gap is only second to the AlGaInP of nitride, in changing the light-emitting component active region content of aluminium plus gallium than the time, emission wavelength can change between 680nm to 550nm.In addition, the lattice constant of AlGaInP and GaAs substrate can mate fully, and therefore, AlGaInP (InGaAlP) is applicable to the light-emitting component of visible region.
Traditional AlGaInP light-emitting diode (LED) structure as shown in Figure 1.Its structure is to become long number layer epitaxial layer to form light-emitting diode structure on n p type gallium arensidep (GaAs) extinction substrate 10: wherein be n type AlGaInP (n-InGaAlP) limiting layer 11 of growing up on GaAs substrate 10 in regular turn, the AlGaInP active layer 12 of then growing up thereon, p type AlGaInP (p-InGaAlP) limiting layer 13 of growing up again on active layer 12 then so just forms double-heterostructure.The emission wavelength of this light-emitting diode is that the ratio by the aluminium plus gallium in the active layer 12 is determined.Increase the aluminium content in the active layer 12, the LED emission wavelength is shortened.At the same time, the aluminium content height of the aluminium content of the limiting layer 11,13 outside active layer 12 both sides in must specific activity layer 12 could inject carrier active layer 12 effectively, and the light that active layer 12 is sent is unlikely on the other hand is limited 11,13 absorption of layer.On the light-emitting area of LED structure, plate a front metal electrode 14, and plate backplate 15 in the do not grow up one side of epitaxial layer of GaAs substrate 10.
Generally speaking, the luminous efficiency of light-emitting diode, except the joint efficiency that depends on electronics and hole in active layer 12, whether the electric current of front electrode 14 can be distributed to the edge of crystal grain effectively, making light connect face from p-n equably and produce, also is the one of the main reasons of the luminous efficiency of decision light-emitting diode.When if p type limiting layer 13 can't make electric current effectively disperse because of resistance is too high, then electric current will directly flow to backplate 14 by front electrode, the congested phenomenon of electric current takes place, electric current will effectively be disperseed, and most light that produces will be stopped by lighttight front electrode 14 and can't send, or, cause luminous efficiency to reduce because of metal electrode 14 reflections are absorbed by substrate.Just have above-mentioned shortcoming in known AlGaInP light-emitting diode, this is that concentration because of the AlGaInP limiting layer 13 of p type is generally 1 * 10
18Cm
-3Below, and hole mobility only about 10 wherein is to 20cm
2V/sec, the resistance value of gained is about about 0.5 Ω-cm, transverse current can't be distributed on the whole crystal grain because resistance is higher.For addressing this problem, as shown in Figure 2, prior art such as United States Patent (USP) are also developed relevant different structure the 5th, 008, No. 718.The structure of Fig. 2 is the semiconductor window layer 16 that growth one is different from AlGaInP on the AlGaInP limiting layer 13 of the P of Fig. 1 type, and the characteristic of this window layers is that resistance is low, and conductivity is good, and energy gap is greater than the energy gap of active layer 12.Therefore, this semiconductor window layer 16 does not absorb the light that the p-n interface is sent.Be fit in order to the material of making window layers 16 such as aluminum gallium arsenide (GaAlAs), gallium arsenide phosphide (GaAsP), and gallium phosphide (GaP) etc., and the optimum thickness of this window layers 16 between: between 5 one tens of microns.Because the gallium arsenide-phosphide and the lattice constant of gallium phosphide and the lattice constant utmost point of GaAs substrate 10 and AlGaInP 13 do not match, therefore the interface of growing up very easily produces a large amount of difference rows or dislocation, thereby influences the photoelectric characteristic of light-emitting diode unfriendly.
As shown in Figure 3, No. the 5th, 048,035, the another kind of structure of prior art such as United States Patent (USP) are described, and being increases current blocked layer 17 and Bragg reflecting layer 18, and its electric current dispersion layer or window layers 19 then are to be material with aluminum gallium arsenide (GaAlAs).The diode structure of this patent makes electric current that front electrode 14 flowed out be subjected to the influence of current blocked layer 17 and is distributed in effectively in the electric current dispersion layer 19; In addition, the reflector 18 that adds between GaAs substrate 10 and AlGaInP heterostructure can be reduced the light that active layer 12 sends and absorbed by GaAs substrate 10.About this structure makes that the luminous efficiency of light-emitting diode can double, yet, the necessary many growth one deck n type AlGaInP (InGaAlP) of this structure is as electric current dispersion layer 19, the mutual switching of each layer p/n type alloy makes the influenced and overall structure of the purity of alloy become comparatively complicated, has obviously increased manufacturing cost.In addition, the growth in reflector 18 must be controlled the thickness of its composition and each layer exactly, and thickness is several microns, so make rather time-consuming.
Various AlGaInP light emitting diode constructions produce main shortcoming in the above-mentioned prior art in order to improve, and purpose of the present invention promptly is to provide a novel high brightness AlGaInP light-emitting diode structure, makes it have following advantage:
(1) directly uses the mechanism of highly doped conductive formation as scattered current;
(2) the current blocked layer that do not need to grow up again; And
(3) need not switch the different doped source current blocked layer of growing up.
This light-emitting diode comprises one first metal electrode, one substrate, one first limiting layer, an active layer, one second limiting layer, the highly doped conductive formation of one selectivity, the low light absorptive electric current dispersion layer of one sandwich construction and one second metal electrode, it is characterized in that this structure via twice epitaxial growth and once plate-making and etching step can finish, growing up for the first time is preface one first limiting layer of growing up successively on substrate, one active layer, one second limiting layer and the highly doped conductive formation of a selectivity.Then the highly doped conductive formation of this selectivity via plate-making and etching step after, stay the partly required highly doped conductive formation of selectivity district.The wafer that then will contain AlGaInP light-emitting diode of the present invention is sent in the crystallographic system system of heap of stone with organic metal gas phase brilliant method (OMVPE) of heap of stone and is grown up behind the low light absorptive electric current dispersion layer of a sandwich construction, finish the making of first metal electrode and second metal electrode again, promptly finish the processing procedure of high brightness LED of the present invention.
According to preferred embodiment of the present invention, on P type AlGaInP limiting layer 13, the highly doped conductive formation 20 of the p type of growing up, and then utilize light shield plate-making and etching, expose P type AlGaInP (p-InGaAlP).Because the doping content of AlGaInP is less than 1 * 10
18Cm
-3, so exposed portions serve will be the p type AlGaInP limiting layer 13 with high electrical resistance value as previously mentioned, the result makes and reaches the effect that electric current disperses by current direction left highly doped conductive formation 20 of p type behind selective etch.
Another object of the present invention is promptly in the method for the light emitting diode construction of the novel high brightness AlGaInP that provides a kind of manufacturing to have the highly doped conductive formation of selectivity, its method ties up to the highly doped conductive formation 20 of a p type of growing up on the AlGaInP double-heterostructure, the material of this highly doped conductive formation 20 can be GaAs, aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide, or other doping content is greater than 1 * 10
18Cm
-3Semi-conducting material.Via light shield plate-making and etching step, expose p type AlGaInP limiting layer 13 then, make the highly doped low resistance 20 of current direction p type to reach the effect that electric current disperses, improve the luminous efficiency of light-emitting diode thus with high electrical resistance value.
In order to make purpose of the present invention more cheer and bright, existing conjunction with figs. illustrates that preferred embodiment of the present invention is as follows:
Figure 1 shows that the profile of traditional AlGaInP light emitting diode construction.
Fig. 2 is a kind of profile with AlGaInP light emitting diode construction of window layers of the prior art.
Fig. 3 has window layers, current blocked layer for another kind of the prior art, and the profile of the AlGaInP light emitting diode construction of Bragg reflecting layer.
Fig. 4 (a)-4 (c) is the profile of high-brightness LED construction according to a preferred embodiment of the present invention.
Fig. 5 (a)-5 (c) is the profile according to the high-brightness LED construction of another preferred embodiment of the present invention.
Component symbol explanation in the accompanying drawing:
10 GaAs substrates
11 AlGaInP limiting layers
12 AlGaInP active layers
13 AlGaInP limiting layers
14 front electrodes
15 backplates
16 semiconductor window layers
17 current blocked layers
18 Bragg reflecting layers
19 electric current dispersion layers
20 height ooze assorted conductive formation
The low light absorptive electric current dispersion layer of 21 sandwich constructions
Purpose of the present invention is promptly providing a light emitting diode construction of high brightness AlGaInP with novelty of the highly doped conductive formation of selectivity, Fig. 4 illustrates the profile according to the novel AlGaInP light emitting diode construction of one embodiment of the invention, wherein, Fig. 4 (a) shows the epitaxially grown structure first time of the light emitting diode construction of high brightness AlGaInP of the present invention, wherein the formation method of this diode from bottom to top is respectively: mix first kind of conductivity type one, AlGaInP (n-InGaAlP) limiting layer 11 of growing up in regular turn on the GaAs of n type impurity (GaAs) substrate 10 and mixing first kind of conductive-type impurity for example, one AlGaInP (InGaAlP) active layer 12, one mixes second kind of conductivity type, for example the AlGaInP of p type impurity (p-InGaAlP) limiting layer 13 and form the AlGaInP double-heterostructure.The highly doped conductive formation 20 that mixes second kind of conductive-type impurity of then on this AlGaInP double-heterostructure, growing up, the material of this highly doped conductive formation can be GaAs (GaAs), aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), gallium phosphide (GaP), or doping content is greater than 1 * 10
18Cm
-3Semi-conducting material, then shown in Fig. 4 (b), highly doped conductive formation 20 exposes the p type AlGaInP limiting layer 13 with high electrical resistance via after light shield plate-making and the etching step.Shown in Fig. 4 (c), after etching step, build the low light absorptive electric current dispersion layer 21 of brilliant method or molecular beam epitaxy method growth sandwich construction again with the organic metal gas phase, should low light absorptive electric current dispersion layer be by not light absorbent such as gallium phosphide or aluminum gallium arsenide, and the sandwich construction alternately formed of light absorbent such as materials such as GaAs or gallium arsenide-phosphide.Promptly, this sandwich construction can be by the mutual multiple-level stack structure of forming of gallium phosphide/gallium arsenide-phosphide (Gap/GaAsP), or by the mutual multiple-level stack structure of forming of gallium phosphide/GaAs (GaP/GaAs), or by the mutual multiple-level stack structure of forming of GaAs/aluminum gallium arsenide (GaAs/AlGaAs).This low light absorptive electric current dispersion layer 21 is only alternately piled up less than the material of active region 12 band gaps greater than the material of active region 12 band gaps and band gap by band gap and forms.The effect of this structure is to reduce resistance and scattered current, and the light major part that active region 12 is produced penetrates outside diode by layer 21.Preferably, each layer thickness of the low light absorptive electric current dispersion layer of this sandwich construction is less than 5 microns.At last, plate a metal level on the light-emitting area top of light-emitting diode, forming a front electrode 14, and (face of no growth epitaxial layer) whole face plates layer of metal to form a backplate 15 below n p type gallium arensidep substrate 10.
After Fig. 4 (c) is depicted as epitaxial growth for the third time, has the profile of the AlGaInP light emitting diode construction of low light absorptive electric current dispersion layer 21.In high-brightness LED construction of the present invention, because highly doped conductive formation 20 has lower resistance value with respect to p type AlGaInP limiting layer 13, therefore when voltage puts on front electrode 14, electric current can flow to both sides by front electrode 14 and have the highly doped conductive formation of low-resistance selectivity district 20, electric current is disperseed, and the congested phenomenon of unlikely generation electric current improves the luminous efficiency of light-emitting diode thus.Because of the band gap of the limiting layer 11,13 of active layer both sides about in the of the 12 band gap height than active layer 12, the carrier of limiting layer 11,13 can inject active layer 12 effectively again, and on the other hand, the light that active layer 12 is sent is unlikely to be limited 11,13 absorption of layer.So the light emitting diode construction with novel high brightness AlGaInP of the highly doped conductive formation 20 of selectivity of the present invention, its simple in structure being easy to is made and is had the effect that electric current disperses, and can improve the luminous efficiency of light-emitting diode thus.
Similarly, Fig. 5 illustrates the profile of novel AlGaInP light emitting diode construction according to another embodiment of the present invention, wherein, Fig. 5 (a) shows the epitaxially grown structure first time of the light emitting diode construction of high brightness AlGaInP of the present invention, wherein this diode from bottom to top is respectively: grow up in regular turn on n p type gallium arensidep (GaAs) substrate 10 n type AlGaInP (n-InGaAlP) limiting layer 11, one AlGaInPs (InGaAlP) active layer 12 and the highly doped conductive formation 20 of a p type.This highly doped conductive formation 20 is via after plate-making of light shield and the etching step, exposed portions serve AlGaInP (InGaAlP) active layer 12.Shown in Fig. 5 (b), then grow up P type AlGaInP (p-InGaAlP) limiting layer 13 on highly doped conductive formation of this selectivity and part active layer then.Shown in Fig. 5 (c), after the step of growth limiting layer 13, build the low light absorptive electric current dispersion layer 21 of brilliant method or molecular beam epitaxy method growth sandwich construction again with the organic metal gas phase.Because highly doped conductive formation 20 has lower resistance value with respect to p type AlGaInP limiting layer 13, therefore when voltage puts on front electrode 14, electric current can flow to both sides by front electrode 14 and have the highly doped conductive formation of low-resistance selectivity district 20, electric current is disperseed, and the congested phenomenon of unlikely generation electric current improves the luminous efficiency of light-emitting diode thus.Because of the band gap of the limiting layer 11,13 of active layer both sides about in the of the 12 band gap height than active layer 12, the carrier of limiting layer 11,13 can inject active layer 12 effectively again, and on the other hand, the light that active layer 12 is sent is unlikely to be limited 11,13 absorption of layer.So the light emitting diode construction with novel high brightness AlGaInP of the highly doped conductive formation 20 of selectivity of the present invention, its simple in structure being easy to is made and is had the effect that electric current disperses, and can improve the luminous efficiency of light-emitting diode thus.
Those skilled in the art can make many modifications to the present invention, and therefore, the present invention is not limited to the above embodiments and illustrated explanation, and various modifications all do not exceed the accompanying Claim scope.
Claims (30)
1, a kind of light-emitting diode comprises:
One substrate mixes first kind of conductive-type impurity;
First limiting layer is formed on this substrate and mixes first kind of conductive-type impurity;
One active layer is formed on this first limiting layer;
Second limiting layer is formed on this active layer and mixes second kind of conductive-type impurity;
The highly doped conductive formation of one selectivity optionally is formed on part second limiting layer, and mixes second kind of conductive-type impurity, and the resistance value of described highly doped conductive formation is lower than the resistance value of AlGaInP, and its doping content is greater than 1 * 10
18Cm
-3:
One low light absorptive electric current dispersion layer is formed on highly doped conductive formation of this selectivity and part second limiting layer, and mixes second kind of conductive-type impurity;
First metal electrode is formed at described substrate below; And
Second metal electrode is formed on the described low light absorptive electric current dispersion layer;
Wherein said first limiting layer, active layer and second limiting layer are made by AlGaInP;
Thus, when a voltage put on second metal electrode, electric current can be flowed to the highly doped conductive formation of selectivity of both sides by second metal electrode, and electric current is disperseed, and the congested phenomenon of unlikely generation electric current.
2, light-emitting diode as claimed in claim 1, wherein said substrate is made by GaAs.
3, light-emitting diode as claimed in claim 1, wherein said low light absorptive electric current dispersion layer are by not light absorbent such as gallium phosphide or aluminum gallium arsenide, and the sandwich construction alternately formed of light absorbent such as materials such as GaAs or gallium arsenide-phosphide.
4, light-emitting diode as claimed in claim 3, each layer thickness of the low light absorptive electric current dispersion layer of wherein said sandwich construction is less than 5 microns.
5, light-emitting diode as claimed in claim 1, wherein said first conductivity type is the p type, and second conductivity type is the n type.
6, light-emitting diode as claimed in claim 1, wherein said first conductivity type is the n type, and second conductivity type is the p type.
7, light-emitting diode as claimed in claim 1, the material of wherein said highly doped conductive formation is selected from GaAs, aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide.
8, a kind of light-emitting diode comprises:
One substrate mixes first kind of conductive-type impurity;
First limiting layer is formed on this substrate and mixes first kind of conductive-type impurity;
One active layer is formed on this first limiting layer;
The highly doped conductive formation of one selectivity, selectivity is formed on the part active layer, and mixes second kind of conductive-type impurity, and the resistance value of described highly doped conductive formation is lower than the resistance value of AlGaInP, and its doping content is greater than 1 * 10
18Cm
-3
Second limiting layer, be formed at the highly doped conductive formation of this selectivity and partly active layer on, and mix second kind of conductive-type impurity;
One low light absorptive electric current dispersion layer is formed on this second limiting layer, and mixes second kind of conductive-type impurity;
First metal electrode is formed at described substrate below; And
Second metal electrode is formed on the described low light absorptive electric current dispersion layer;
Wherein said first limiting layer, active layer and second limiting layer are made by AlGaInP;
Thus, when a voltage put on second metal electrode, electric current can be flowed to the highly doped resistive layer of selectivity of both sides by second metal electrode, and electric current is disperseed, and the congested phenomenon of unlikely generation electric current.
9, light-emitting diode as claimed in claim 8, wherein said substrate is made by GaAs.
10, light-emitting diode as claimed in claim 8, wherein, described low light absorptive electric current dispersion layer is by not light absorbent such as gallium phosphide or aluminum gallium arsenide, and the sandwich construction alternately formed of light absorbent such as materials such as GaAs or gallium arsenide-phosphide.
11, light-emitting diode as claimed in claim 10, each layer thickness of the low light absorptive electric current dispersion layer of wherein said sandwich construction is less than 5 microns.
12, light-emitting diode as claimed in claim 8, wherein said first conductivity type is the p type, and second conductivity type is the n type.
13, light-emitting diode as claimed in claim 8, wherein said first conductivity type is the n type, and second conductivity type is the p type.
14, light-emitting diode as claimed in claim 8, the material of wherein said highly doped conductive formation is selected from GaAs, aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide.
15, a kind of method of making light-emitting diode, this method comprises the following steps:
One substrate that mixes first kind of conductive-type impurity is provided;
First limiting layer of first kind of conductive-type impurity is mixed in formation one on this substrate;
On this first limiting layer, form an active layer;
Second limiting layer of second kind of conductive-type impurity is mixed in formation one on this active layer;
The highly doped conductive formation of selectivity of second kind of conductive-type impurity is mixed in formation one on this second limiting layer, and the resistance value of described highly doped conductive formation is lower than the resistance value of AlGaInP, and its doping content is greater than 1 * 10
18Cm
-3
The highly doped conductive formation of this selectivity of selective etch is to expose a part of second limiting layer; And
Low light absorptive electric current dispersion layer at this epitaxial growth one sandwich construction on second limiting layer that highly doped conductive formation of overetched selectivity and part expose;
Wherein said first limiting layer, active layer and second limiting layer are made by AlGaInP.
16, method as claimed in claim 15 also comprises the following steps:
Form first metal electrode in described substrate below; And
On the low light absorptive electric current dispersion layer of part, form second metal electrode.
17, method as claimed in claim 15, wherein said substrate is made by GaAs.
18, method as claimed in claim 15, wherein said first conductivity type is the p type, and second conductivity type is the n type.
19, method as claimed in claim 15, wherein said first conductivity type is the n type, and second conductivity type is the p type.
20, method as claimed in claim 15, the material of the highly doped conductive formation of wherein said selectivity is selected from GaAs, aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide.
21, method as claimed in claim 15, wherein said low light absorptive electric current dispersion layer are by not light absorbent such as gallium phosphide or aluminum gallium arsenide, and the sandwich construction alternately formed of light absorbent such as materials such as GaAs or gallium arsenide-phosphide.
22, method as claimed in claim 21, each layer thickness of the low light absorptive electric current dispersion layer of wherein said sandwich construction is less than 5 microns.
23, a kind of method of making light-emitting diode, this method comprises the following steps:
One substrate that mixes first kind of conductive-type impurity is provided;
First limiting layer of first kind of conductive-type impurity is mixed in formation one on this substrate;
On this first limiting layer, form an active layer;
The highly doped conductive formation of selectivity of second kind of conductive-type impurity is mixed in formation one on this active layer, and the resistance value of described highly doped conductive formation is lower than the resistance value of AlGaInP, and its doping content is greater than 1 * 10
18Cm
-3
The highly doped conductive formation of this selectivity of selective etch is to expose a part of active layer;
Mix second limiting layer of second kind of conductive-type impurity in this formation one on the active layer that highly doped conductive formation of overetched selectivity and part expose; And
The low light absorptive electric current dispersion layer of epitaxial growth one sandwich construction on this second limiting layer;
Wherein said first limiting layer, active layer and second limiting layer are made by AlGaInP.
24, method as claimed in claim 23 also comprises the following steps:
Form first metal electrode in described substrate below; And
On the low light absorptive electric current dispersion layer of part, form second metal electrode.
25, method as claimed in claim 24, wherein said substrate is made by GaAs.
26, as the method for claim 25, wherein said first conductivity type is the p type, and second conductivity type is the n type.
27, method as claimed in claim 25, wherein said first conductivity type is the n type, and second conductivity type is the p type.
28, method as claimed in claim 25, the material of the highly doped conductive formation of wherein said selectivity is selected from GaAs, aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide.
29, method as claimed in claim 25, wherein said low light absorptive electric current dispersion layer are by not light absorbent such as gallium phosphide or aluminum gallium arsenide, and light absorbent such as materials such as GaAs or gallium arsenide-phosphide replace the sandwich construction of composition.
30, method as claimed in claim 29, each layer thickness of the low light absorptive electric current dispersion layer of wherein said sandwich construction is less than 5 microns.
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| CNB001210408A CN1201410C (en) | 2000-07-13 | 2000-07-13 | High-brightness LED unit and its making method |
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| CN100438110C (en) * | 2006-12-29 | 2008-11-26 | 北京太时芯光科技有限公司 | LED with the current transfer penetration-enhanced window layer structure |
| CN101127385B (en) * | 2007-09-18 | 2013-08-14 | 璨圆光电股份有限公司 | GaN series LED and its making method |
| CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
| CN106887490B (en) * | 2017-02-21 | 2018-04-20 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips |
| CN108321264A (en) * | 2017-12-22 | 2018-07-24 | 南昌凯迅光电有限公司 | High brightness ito thin film LED chip and its manufacturing method |
| CN110829180A (en) * | 2019-11-07 | 2020-02-21 | 杜菁菁 | High peak power 1550nm semiconductor laser diode chip |
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