CN1996143B - Method for cleaning dry film pressed on wafer - Google Patents
Method for cleaning dry film pressed on wafer Download PDFInfo
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- CN1996143B CN1996143B CN2006100025413A CN200610002541A CN1996143B CN 1996143 B CN1996143 B CN 1996143B CN 2006100025413 A CN2006100025413 A CN 2006100025413A CN 200610002541 A CN200610002541 A CN 200610002541A CN 1996143 B CN1996143 B CN 1996143B
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- dry film
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- printing opacity
- photoresist layer
- film carrier
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Abstract
The invention relates to the application of a dry film. It provides a dry film stitching a substrate plate composed of an attached photo resistant layer and an obvious light through carrier mould. Before exposure display, clean the dry film light through carrier mold in the darkroom, with the cleaning method composed of chemical spraying and ion cleansing to get rid of the residue contamination on the photo carrying film, getting rid of the dry film burr to improve the process passing rate of development after subsequent exposure.
Description
[technical field]
The present invention is relevant for a kind of cleaning process that is pressed on the dry film on the wafer, particularly relevant for a kind of cleaning process on the substrate of wafer for example that in the wafer-level packaging processing procedure dry film is pressed together on.
[background technology]
In the wafer-level packaging field, normally carry out the image transfer printing, with depositing or be etched with on a wafer and form projection or circuit with photoresist.In order to reach suitable thickness and good image effect, present employed photoresist is dry film (dry film).Traditional dry film has three-decker, and it comprises one deck printing opacity film carrier, at least one photoresist layer and a protective seam, and wherein photoresist layer is located between printing opacity film carrier and the protective seam.After peeling off protective seam, this photoresist layer of dry film is pressure bonded on the substrate (such as wafer), expose again and develop, just can form pattern image.Yet, when this dry film is pressed together on the wafer, in processing procedure produced pollution thing can cause exposing inaccurate, thereby reduce process rate.
See also Fig. 1, in the wafer-level packaging processing procedure, when a dry film 10 is pressure bonded to the substrate that a wafer 20 or encapsulated, photoresist layer in this dry film 10 (as the acryl photosensitive resin) 11 will be attached to an active surface 21 of this wafer 20, and a printing opacity film carrier 12 of this dry film 10 covers on this photoresist layer 11.When carrying out step of exposure, one light shield 30 is located at the top of this wafer 20 and this dry film 10, and with an exposure irradiation light (as ultraviolet light) 31 by this light shield 30, see through this printing opacity film carrier 12 again, and expose on this photoresist layer 11, the position that this photoresist layer 11 is irradiated to produces photochemical reaction.When this photoresist layer 11 is the eurymeric photoresistance, illuminated position will be removed after development; When this photoresist layer 11 is the minus photoresistance, illuminated position will keep after development.Therefore, the quality of exposure quality can determine follow-up output yield.Yet before exposure, on the printing opacity film carrier 12 of dry film 10 pollutant can residually be arranged, as residual photoresistance 13 and particle 14, those residual photoresistances 13 can make exposure irradiation light 31 produce refraction or scattering with particle 14, and it is inaccurate to cause exposing.In addition, traditional dry film 10 is after process pressing and cutting, and its periphery has dry film burr (dry film burr), also can influence the exposure quality.
[summary of the invention]
In view of above problem, the present invention mainly provides a kind of using method of dry film, it is after being pressure bonded to substrate with dry film and before exposure, in the darkroom, clean a printing opacity film carrier of this dry film, to remove pollutants such as residual photoresistance on this printing opacity film carrier, particle, can remove simultaneously dry film burr,, improve the yield of successive process to improve the accuracy of exposure at periphery.
Another object of the present invention is to provide a kind of method that forms photoresistance on wafer, it forms a printing opacity film carrier on the photoresist layer on the wafer active surface, and when cleaning this printing opacity film carrier and wafer, this method can protect photoresist layer not by eccysis.
A further object of the present invention is to provide a kind of cleaning process that is pressed on the dry film on the wafer.
One of for achieving the above object, the present invention adopts following technical scheme: a dry film is provided, and it includes a printing opacity film carrier and at least one photoresist layer; This dry film to one substrate of pressing makes described photoresist layer be attached at substrate; And the printing opacity film carrier that in the darkroom, cleans described dry film.Before the step of described cleaning printing opacity film carrier, also comprise: the cutting dry film, so that the size of this dry film is corresponding to the size of substrate.The step of described cleaning printing opacity film carrier further comprises: carry out a chemical hydro-peening step, to remove residual photoresistance and the particle on the printing opacity film carrier; Carry out a washed with de-ionized water step; And carry out a drying steps.
For achieving the above object two, the present invention adopts following technical scheme: a wafer is provided, and it has an active surface; On the active surface of described wafer, form at least one photoresist layer; On described photoresist layer, form a printing opacity film carrier; And cleaning printing opacity film carrier and wafer.The step of cleaning the printing opacity film carrier further comprises: carry out a chemical hydro-peening step, to remove residual photoresistance and the particle on this printing opacity film carrier; Carry out a washed with de-ionized water step; And carry out a drying steps.
For achieving the above object three, the present invention adopts following technical scheme: a dry film is provided, and it comprises the film carrier that an at least one photoresist layer and that is attached at wafer appears; Carry out a chemical hydro-peening step, to remove residual photoresistance and the particle on this film carrier; Carry out a washed with de-ionized water step, to remove chemical solution; And carry out a drying steps, to remove this deionized water.
Compared with prior art, the present invention is owing to carried out the step of cleaning the printing opacity film carrier before exposure, so can remove pollutants such as residual photoresistance on the printing opacity film carrier, particle, also can remove the dry film burr of periphery simultaneously, thereby can improve the quality that post-exposure is developed.
[description of drawings]
Fig. 1 is traditional wafer schematic cross-section in exposure process after dry film in the pressing and cutting.
Fig. 2 A to 2H is according to one of the present invention specific embodiment, the schematic cross-section of the use of a dry film on a substrate.
[embodiment]
The using method of dry film of the present invention is applicable to the wafer-level packaging processing procedure, specific embodiment explanation as after.
At first; see also shown in Fig. 2 A; one dry film 110 is provided; this dry film 110 consists predominantly of at least three layers structure; be respectively at least one photoresist layer 111, a printing opacity film carrier 112 and a diaphragm 113; wherein this photoresist layer 111 is a kind of sensing optical activity resin, can be eurymeric photoresistance or minus photoresistance, and it is formed on the printing opacity film carrier 112 and this diaphragm 113 covers.In the present embodiment, this photoresist layer 111 is the minus photoresistances as plated bumps.Usually printing opacity film carrier 112 can be PET (polyester) material, or can be described as Mylar film, and diaphragm 113 can be PE (tygon) material.
Afterwards, see also shown in Fig. 2 B, dry film 110 is pressure bonded to a substrate.In the present embodiment, supplying the substrate of these dry film 110 pressings is a wafer 120, but this substrate also can be an IC (integrated circuit) support plate, a printed circuit board (PCB) or a ceramic circuit board etc.In dry film pressing process; earlier diaphragm 113 is peeled off; again the photoresist layer 111 of dry film 110 is attached at an active surface 121 of wafer 120; its attaching mode can be bonded to active surface 121 with dry film 110 by a rolling device (not shown), and the printing opacity film carrier 112 of dry film 110 appears and cover and protect photoresist layer 111.In the present embodiment; wafer 120 is one to have finished the semiconductor substrate of production of integrated circuits; it has a protective seam 122 (passivationlayer) or an adhesive layer, perhaps can be formed with on the active surface 121 a heavy distributed lines layer (redistribution wiring layer, RDL).Usually can be pre-formed the glued bed of material (priming coat) (not shown) of a primary coat on the active surface 121 of this wafer 120, hexamethyldisilazane (HMDS) for example is to increase the adhesion of 111 pairs of these wafers 120 of photoresist layer.
See also shown in Fig. 2 C, utilize a cutting device 130 cutting dry films 110, so that the size of this dry film 110 is corresponding to the size of wafer 120.Usually after cutting, the appearing the surface and can attach pollutants such as residual photoresistance 114 or particle 115 of this printing opacity film carrier 112, in addition, the lateral margin of photoresist layer 111 also may residually have dry film burr 116 (dry film burr), and this residual photoresistance 114, particle 115 or dry film burr 116 all can influence the accuracy and the quality of exposure.Yet the present invention is not limited to carry out the cutting step of this dry film 110 again after the pressing step of carrying out dry film 110.In other embodiments, the cutting step of this dry film 110 can be carried out in advance and overlay to wafer 120 again.
See also shown in Fig. 2 D, 2E and the 2F, after cutting step, carry out a cleaning step, with remove in cutting dry film 110 steps residual residual photoresistance 114 or particle 115 etc., and remove dry film burr 116 simultaneously.This cleaning step is mainly in order to cleaning printing opacity film carrier 112, and wafer capable of washing 120.This cleaning step is carried out in a darkroom (darkroom), and promptly this wafer 120 is placed on a darkroom or a gold-tinted is indoor, guaranteeing the photolytic activity of photoresist layer 111, and then avoids photoresist layer 111 that photochemical reaction improperly takes place.This cleaning step further comprises a chemical hydro-peening step and a washed with de-ionized water step, in preferred embodiment, more can comprise a drying steps, to promote cleaning performance.Wherein, see also shown in Fig. 2 D, in chemical hydro-peening step, be with the appear surface of chemical hydro-peening solution 140 hydro-peenings in this printing opacity film carrier 112, this chemistry hydro-peening solution 140 can include the material of known minus photoresistance developer or eurymeric photoresistance cleaning fluid, but concentration should be comparatively thin, for example dimethylbenzene or propyleneglycoles methyl ether (PGME), can remove the particle 115 and residual photoresistance 114 that attach in particle external in the processing procedure 115, the cutting on printing opacity film carrier 112, more can remove the dry film burr 116 of these photoresist layer 111 lateral margins simultaneously.Under the protection of printing opacity film carrier 112, photoresist layer 111 can excessively not removed.Afterwards, see also shown in Fig. 2 E, in the washed with de-ionized water step, be with the appear surface of a deionized water 150 hydro-peenings, to continue to remove residual foreign particles 115, residual chemical hydro-peening solution 140 and the residual photoresistance 114 that has dissolved or become flexible in this printing opacity film carrier 112.Afterwards, see also shown in Fig. 2 F, in drying steps, provide a dry gas 160, for example nitrogen to remove above-mentioned deionized water 150 and to continue to remove foreign particles 115, makes the surface that appears of printing opacity film carrier 112 have quite high cleanliness.In addition, after whole cleaning step, photoresist layer 111 can be formed with and shrink lateral margin 111a, can be for determining whether process cleaning and judging its degree of cleaning.
Afterwards, see also shown in Fig. 2 G, carry out a step of exposure, the wafer 120 after will cleaning usually is placed in the gold-tinted chamber (yellow room), to expose with the photoresist layer 111 and the printing opacity film carrier 112 of dry film 110.One light shield 170 is located at the top of printing opacity film carrier 112, one exposure irradiation light 171 is by this light shield 170, see through printing opacity film carrier 112 and patterning irradiates light resistance layer 111 again, make this photoresist layer 111 form the exposure region 111b and the unexposed area 111c of suitable image, wherein exposure region 111b represents to take place photochemically reactive photoresist layer 111.Preferably, the gold-tinted chamber in this step of exposure is beneficial to the continous way flow operations with above-mentioned identical in order to the darkroom of cleaning printing opacity film carrier 112.
Afterwards, see also shown in Fig. 2 H, remove described printing opacity film carrier 112, and the described photoresist layer 111 that develops, to form pattern.Because in the present embodiment, this photoresist layer 111 be the minus photoresistance, so the photoresistance of unexposed area 111c is removed, and formation pattern depressed area 111d is for the formation or the etching operation of follow-up projection, circuit.Therefore, utilize the using method of the present invention's dry film, this printing opacity film carrier 112 of this dry film 110 is good with the cleanliness of this wafer 120, reaches accurate exposure, to form correct pattern depressed area 111d.In the dry film light exposure test, known treatment scheme can produce 0.58% wafer fraction defective on a collection of wafer that takes second place, and utilizes the using method of the present invention's dry film, and fraction defective can effectively be reduced to 0.01% after the wafer-process, reaches tangible processing procedure and improves.The present invention's the dry film user genealogy of law can apply to the producing lug of wafer-level packaging processing procedure, and the shape and the volume of unanimity arranged in order to the follow-up projection cording that forms.
Though the present invention discloses as above with aforesaid embodiment, it is not in order to limit the present invention.Without departing from the spirit and scope of the present invention, those of ordinary skill in the art can carry out various changes to the present invention.If modification of the present invention is belonged within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes interior.
Claims (2)
1. cleaning process that is pressed on the dry film on the wafer, described dry film comprises the film carrier that an at least one photoresist layer and that is attached at wafer appears, it is characterized in that: this flow process comprises: carry out the hydro-peening step of use dimethylbenzene or propyleneglycoles methyl ether, to remove residual photoresistance and the particle on this film carrier; Carry out a washed with de-ionized water step, to remove the solution of described dimethylbenzene or propyleneglycoles methyl ether; And carry out a drying steps, to remove this deionized water; Wherein, when the hydro-peening step of carrying out described dimethylbenzene or propyleneglycoles methyl ether, washed with de-ionized water step and drying steps, described wafer all is placed on a darkroom or a gold-tinted is indoor.
2. as claim 1 a described cleaning process, it is characterized in that: employed gas is nitrogen in the described drying steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100025413A CN1996143B (en) | 2006-01-06 | 2006-01-06 | Method for cleaning dry film pressed on wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100025413A CN1996143B (en) | 2006-01-06 | 2006-01-06 | Method for cleaning dry film pressed on wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1996143A CN1996143A (en) | 2007-07-11 |
| CN1996143B true CN1996143B (en) | 2010-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100025413A Active CN1996143B (en) | 2006-01-06 | 2006-01-06 | Method for cleaning dry film pressed on wafer |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103353708A (en) * | 2013-06-14 | 2013-10-16 | 大连理工大学 | Multilayer negative photoresist mold manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5897337A (en) * | 1994-09-30 | 1999-04-27 | Nec Corporation | Process for adhesively bonding a semiconductor chip to a carrier film |
| EP1460478A1 (en) * | 2003-03-18 | 2004-09-22 | Eternal Technology Corporation | Dry film photoresist |
| CN1707361A (en) * | 2004-06-09 | 2005-12-14 | 松下电器产业株式会社 | Exposure system and pattern formation method |
-
2006
- 2006-01-06 CN CN2006100025413A patent/CN1996143B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5897337A (en) * | 1994-09-30 | 1999-04-27 | Nec Corporation | Process for adhesively bonding a semiconductor chip to a carrier film |
| EP1460478A1 (en) * | 2003-03-18 | 2004-09-22 | Eternal Technology Corporation | Dry film photoresist |
| CN1707361A (en) * | 2004-06-09 | 2005-12-14 | 松下电器产业株式会社 | Exposure system and pattern formation method |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2002-110880A 2002.04.12 |
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| CN1996143A (en) | 2007-07-11 |
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