CN103353708A - Multilayer negative photoresist mold manufacturing method - Google Patents
Multilayer negative photoresist mold manufacturing method Download PDFInfo
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- CN103353708A CN103353708A CN2013102373986A CN201310237398A CN103353708A CN 103353708 A CN103353708 A CN 103353708A CN 2013102373986 A CN2013102373986 A CN 2013102373986A CN 201310237398 A CN201310237398 A CN 201310237398A CN 103353708 A CN103353708 A CN 103353708A
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Abstract
The invention relates to a multilayer negative photoresist mold manufacturing method, and belongs to the field of micromachining process technology research. The invention relates to a manufacturing method of a multilayer SU-8 mold. The mold is applied in the fields of microelectromechanical system, tissue engineering, biomechanics, and the like. The manufacturing method comprises the steps that: a positive photoresist is adopted as a sacrificial layer; a temporary substrate is constructed on lower-layer SU-8 photoresist; when explosion of former two layers of SU-8 photoresist is completed, development is simultaneously carried out; the image area after development is filled by using the positive photoresist; the material is dried on a hot plate, until the filled photoresist is completely cured; excessive photoresist is removed with a wet grinding polishing technology; and the flatness of the entire photoresist layer is trimmed. According to the invention, the positive photoresist is adopted as a sacrificial layer, such that additional sacrificial layer removing process is not needed, and manufacturing difficulty of the multilayer negative photoresist mold is substantially reduced. The manufacturing process provided by the invention is simple, and is compatible with existing micromachining processes. The method has high practicality.
Description
Technical field
The invention belongs to the Micromachining Technology research field, relate to a kind of method for making of multilayer SU-8 mould, be applied in the fields such as MEMS (micro electro mechanical system), organizational project, biomechanics.
Background technology
Dimethyl silicone polymer (polydimethylsiloxane, PDMS) be a kind of the macromolecule organic silicon compound, the advantage such as it has that material price is cheap, light transmission and good biocompatibility, chip fabrication technique are simple becomes a kind of main rapidoprint of the various biochemical microchips such as micro-fluidic chip gradually.
Microstructure on the PDMS microchip mainly adopts the method for castable to process, and the used mold materials of castable mainly contains silicon and SU-8 glue.The processing cost of silicon mould is higher, and is difficult to process complicated three-dimensional microstructures.SU-8 is a kind of thick photoresist of negativity of epoxy radicals, and it has good mechanical property, and the method by adopting repeatedly whirl coating, exposure and once developing, and can produce at low cost three-dimensional multilayer SU-8 mould.But the subject matter that the method exists is: when carrying out upper strata SU-8 glue exposure, the zone that avoid the SU-8 of lower floor glue not need to be exposed is exposed.This problem has limited the range of application of the method, so that can't producing, the method contains the cavity structure that cross-sectional width reduces gradually, for example, and the SU-8 mould of inverted T-shaped die cavity, or contain the bulge-structure that cross-sectional width increases gradually, for example T shape SU-8 mould.In order to address this problem, the main method of having reported at present has: control exposure dose method, minute layer manufacturing method, embedded metal mask method.Control exposure dose method need to be carried out a large amount of experiments, determines the exposure dose of every layer of SU-8 glue, can be so that the exposure process on upper strata does not affect the SU-8 of lower floor glue.Divide layer manufacturing method every layer of SU-8 glue need to be produced in the interim substrate, and then the SU-8 structure that forms together three-dimensional is strictly aimed at and be bonded to each layer, the Major Difficulties of the method is removal and the aligning between each layer and the bonding of interim substrate.The embedded metal mask method is to protect the SU-8 of lower floor glue by embed the layer of metal mask between two-layer SU-8 glue, and the method relates to the removal problem of last metal mask equally.
Summary of the invention
The objective of the invention is to overcome the defective of existing method for making, provide a kind of technological process relatively simply to be used for the method for multilayer SU-8 Mold Making.The multilayer SU-8 mould making method based on the photoetching glue victim layer technology that the present invention proposes, adopt a kind of positive photoresist as sacrifice layer, make up an interim substrate at the SU-8 of lower floor glue, can solve when upper strata SU-8 glue exposes so on the one hand the problem that the zone that the SU-8 of lower floor glue does not need to be exposed is exposed; An interim substrate when this layer positive photoresist can be used as spin coating upper strata SU-8 glue on the other hand, because the developer solution of SU-8 glue can dissolve this positive photoresist, therefore in the SU-8 glue developing process of upper strata, this positive photoresist can be removed at an easy rate, and does not need extra removal process.
The technical solution used in the present invention is a kind of multilayer negative photoresist mould making method, it is characterized in that, adopts a kind of positive photoresist as sacrifice layer, makes up an interim substrate at the SU-8 of lower floor glue, develops simultaneously after front two-layer SU-8 glue exposure is finished; Use positive photoresist that the graphics field after developing is filled, dry until the photoresist of filling solidifies fully at hot plate; Employing wet grinding polishing technology is removed unnecessary photoresist and the flatness of whole glue-line is repaired, and concrete method for making is as follows:
(1) makes ground floor SU-8 glue
At first utilize sol evenning machine spin coating SU-8 glue on the silicon chip of making alignment mark point; Then, carry out front baking at hot plate and process, be heated to 60 ℃ with hot plate and kept 10 minutes, rise to 85 ℃, kept 1 hour, cool off with plate; With the ultraviolet photolithographic machine SU-8 glue is exposed, exposure 110s, 85 ℃ of rear bakings, the time is 1 minute, with the hot plate cooling, does not develop.
(2) make second layer SU-8 glue
The manufacture craft of second layer SU-8 glue comprises that spin coating, front baking processing, exposure and the rear baking processing procedure of second layer SU-8 glue is all identical with ground floor;
(3) in the developer of SU-8 glue, ground floor and second layer SU-8 glue were developed 6 minutes simultaneously; After development is finished, toast at hot plate, baking temperature is 85 ℃, and the time is 30 minutes;
(4) positive photoresist is filled
Adopt the mode that instils, be filled in the die cavity that is formed by front two-layer SU-8 glue with positive photoresist, and on hot plate, this positive photoresist toasted, it is solidified fully.Baking temperature is 65 ℃, and stoving time is 5 hours, and the positive photoresist of filling has covered the SU-8 structure;
(5) adopt the mode of wet grinding polishing that the glue-line surface after filling is repaired, carry out grinding and polishing with positive photoresist, in process of lapping, constantly spray chilled water at sand paper, in order to reduce the friction force in the process of lapping, and the glue material under will grinding in time takes away, and removes unnecessary unnecessary positive glue; Grind until expose till the SU-8 glue of bottom, obtain an interim substrate of smooth positive photoresist, and the flatness of whole glue-line is repaired;
(6) make the 3rd layer of SU-8 glue.The spin coating of the 3rd layer SU-8 glue, front baking processing, exposure and rear baking processing procedure are all identical with ground floor;
(7) to the photoresist developing after the exposure of the 3rd layer photoetching, bake process after the developing process of the 3rd layer of SU-8 glue and development are finished is all with front two-layer identical, because, the developing solution dissolution positive photoresist of SU-8 glue, so dissolved the positive photoresist sacrifice layer of filling, finished the making of mould.
Remarkable result of the present invention is can be by a kind of positive photoresist as sacrifice layer, solve when the exposure of the upper strata of adjacent two layers SU-8 glue, the problem that the zone that the SU-8 of lower floor glue does not need to be exposed is exposed, this positive photoresist can be removed along with the developing process of upper strata SU-8 glue simultaneously, therefore do not need extra sacrifice layer removing step, significantly reduced the manufacture difficulty of multilayer negative photoresist mould.
Description of drawings
Fig. 1 is ground floor SU-8 glue photoetching schematic diagram, Fig. 2 is second layer SU-8 glue photoetching schematic diagram, Fig. 3 is the development schematic diagram of front two-layer SU-8 glue, Fig. 4 is that positive photoresist is filled schematic diagram, Fig. 5 is the mechanical lapping polishing of glue-line, Fig. 6 is the photoetching schematic diagram of the 3rd layer of SU-8 glue, and Fig. 7 is the development of the 3rd layer of SU-8 glue and dissolves simultaneously positive photoresist.Wherein: the 1-silicon chip, the unexposed SU-8 glue of 2-ground floor, 2 '-ground floor exposure SU-8 glue, 3-is used for ground floor glue-line exposure mask version, the 4-ultraviolet light, the unexposed SU-8 glue of the 5-second layer, 5 '-second layer exposure SU-8 glue, 6-is used for second layer glue-line exposure mask version, 7-positive photoresist, the 3rd layer of unexposed SU-8 glue of 8-, 5 ' the-three layers of exposure SU-8 glue, 9-is used for the 3rd layer of glue-line exposure mask version, two-layer SU-8 development structure before the a-, the sacrificial layer structure that forms after the b-mechanical lapping, the 3rd layer of development of c-also dissolved the inverted T-shape type cavity mould that forms behind the positive photoresist simultaneously.
Fig. 8 a is the SU-8 mould photo that completes, and Fig. 8 b is the micro-enlarged photograph of one of them structural unit on the SU-8 mould, and Fig. 8 c is the A-A profile stereoscan photograph of SU-8 die unit.
Embodiment
Describe implementation of the present invention in detail below in conjunction with accompanying drawing and technical scheme, when exposing for the upper strata SU-8 glue that occurs in the making of multilayer SU-8 special construction, the phenomenon that the zone that the SU-8 of lower floor glue does not need to be exposed is exposed has been invented a kind of method of making multilayer SU-8 structure based on photoetching glue victim layer.At first produce the alignment mark point in the silicon base of mould, and on for the mask plate of making every layer of SU-8 plastic structure, produce too the alignment mark point, be used for guaranteeing every layer of locations of structures relation between the SU-8 glue.When the problem that do not exist the exposure area mutually to interfere between the graphic structure on the adjacent two layers SU-8 glue, the method for adopt respectively exposure, once developing is processed.When having the problem that the exposure area interferes mutually between the graphic structure on running into adjacent two layers SU-8 glue, at first carry out exposure and the developing process of bottom SU-8 glue, produce the structure of bottom; Then, cover one deck positive photoresist at bottom SU-8 glue, the thickness outline of positive photoresist surpasses the thickness of bottom SU-8 glue, and positive photoresist is carried out drying and processing; Then, utilize the method for mechanical lapping polishing, get rid of unnecessary positive photoresist, until expose till the bottom SU-8 glue, just obtained an interim substrate of smooth positive photoresist.At last, the SU-8 glue on spin coating upper strata in the interim substrate of this positive photoresist, and expose and develop.As previously mentioned, because the developer solution of SU-8 glue can dissolve this positive photoresist, so the interim substrate of this positive photoresist can be got rid of simultaneously along with the developing process of upper strata SU-8 glue, and the sacrifice layer that does not need to introduce other is removed technique.Take a kind of three layers of SU-8 mould of inverted T-shaped cavity structure that contain as example, as shown in Figure 1.The concrete fabrication processing of three layers of SU-8 mould that contains the inverted T-shaped cavity structure is as follows:
(1) makes ground floor SU-8 glue, as shown in Figure 1.At first produce the alignment mark point in the silicon base of mould, and on for the mask plate of making every layer of SU-8 plastic structure, produce too the alignment mark point, be used for guaranteeing every layer of locations of structures relation between the SU-8 glue.Utilize sol evenning machine spin coating one deck SU-8 glue on the silicon chip of making alignment mark point; Then, carrying out front baking at hot plate processes.Be heated to first 60 ℃, kept 10 minutes, rise to again 85 ℃, kept 1 hour, cool off with plate.Then, utilize Germany
The MA/BA6 type ultraviolet photolithographic machine of MicroTec company development exposes to SU-8 glue, and the time shutter is 110 seconds.At last, baking is processed after hot plate carries out, and rear baking temperature is 85 ℃, and the time is 1 minute, with the hot plate cooling, does not develop.
(2) make second layer SU-8 glue, as shown in Figure 2.The spin coating of second layer SU-8 glue, front baking processing, exposure and rear baking processing procedure are all identical with ground floor.
(3) development of front two-layer SU-8 glue, as shown in Figure 3.In the developer of SU-8 glue, ground floor and second layer SU-8 glue were developed 6 minutes simultaneously.After development is finished, toast at hot plate, baking temperature is 85 ℃, and the time is 30 minutes.
(4) positive photoresist is filled, as shown in Figure 4.Adopt the mode that instils that the BP212 positive photoresist that Beijing Inst. of Chemical Reagent produces is filled in the die cavity that is comprised of front two-layer SU-8 glue, and on hot plate, this positive photoresist is toasted, it is solidified fully.Baking temperature is 65 ℃, and stoving time is 5 hours, and the positive photoresist of filling has covered the SU-8 structure.
(5) grinding and polishing of positive photoresist, as shown in Figure 5.Utilize a precise grinding polisher that positive photoresist is carried out grinding and polishing, in process of lapping, constantly spray chilled water at sand paper, in order to reduce the friction force in the process of lapping, and the glue material under will grinding is in time taken away, grind until expose till the bottom SU-8 glue, obtain an interim substrate of smooth positive photoresist, and the flatness of whole glue-line is repaired.
(6) make the 3rd layer of SU-8 glue, as shown in Figure 6.The spin coating of the 3rd layer of SU-8 glue, front baking processing, exposure and rear baking processing procedure are all identical with ground floor.
The development of (7) the 3rd layers of SU-8 glue, as shown in Figure 7.Bake process after the developing process of the 3rd layer of SU-8 glue and development are finished is all with front two-layer identical.Because the developer solution of SU-8 glue can dissolve the BP212 positive photoresist, the interim substrate that is therefore made up by positive photoresist has obtained containing three layers of SU-8 mould of inverted T-shaped cavity structure along with developing process is removed, and finishes the making of mould.
Fig. 8 a is the SU-8 mould photo that completes, and Fig. 8 b is the micro-enlarged photograph of one of them structural unit on the SU-8 mould, and Fig. 8 c is the A-A profile stereoscan photograph of SU-8 die unit.Can find out that by the SU-8 mould structure that completes the present invention can realize the making of inverted T-shaped type cavity mould fully, and can be applied to the making of more multi-layered complex three-dimensional SU-8 structure.
The present invention adopts a kind of positive photoresist as sacrificial layer material, between the adjacent two layers SU-8 glue that the exposure area existence is interfered mutually, made up an interim substrate, not only solved when upper strata SU-8 glue exposes, the problem that the zone that the SU-8 of lower floor glue does not need to be exposed is exposed, and positive photoresist can be got rid of in the SU-8 glue developing process of upper strata simultaneously.Manufacturing process of the present invention is simple, and compatible with existing micro fabrication, has very strong practicality.
Claims (1)
1. a multilayer negative photoresist method for making is characterized in that, adopts a kind of positive photoresist as sacrifice layer, makes up an interim substrate at the SU-8 of lower floor glue, develops simultaneously after front two-layer SU-8 glue exposure is finished; Use positive photoresist that the graphics field after developing is filled, dry until the photoresist of filling solidifies fully at hot plate; Employing wet grinding polishing technology is removed unnecessary photoresist and the flatness of whole glue-line is repaired, and concrete method for making is as follows:
(1) makes ground floor SU-8 glue
At first produce the alignment mark point in the silicon base of mould, and on for the mask plate of making every layer of SU-8 plastic structure, produce too the alignment mark point, utilize sol evenning machine spin coating SU-8 glue on the silicon chip of making alignment mark point; Then, carry out front baking at hot plate and process, be heated to 60 ℃ with hot plate and kept 10 minutes, rise to 85 ℃, kept 1 hour, cool off with plate; With the ultraviolet photolithographic machine SU-8 glue is exposed, exposure 110s, 85 ℃ of rear bakings, the time is 1 minute, with the hot plate cooling, does not develop.
(2) make second layer SU-8 glue
The manufacture craft of second layer SU-8 glue comprises that spin coating, front baking processing, exposure and the rear baking processing procedure of second layer SU-8 glue is all identical with ground floor;
(3) in the developer of SU-8 glue, ground floor and second layer SU-8 glue were developed 6 minutes simultaneously; After development is finished, toast at hot plate, baking temperature is 85 ℃, and the time is 30 minutes;
(4) positive photoresist is filled
Adopt the mode that instils, be filled in the die cavity that is formed by front two-layer SU-8 glue with positive photoresist, and on hot plate, this positive photoresist toasted, it is solidified fully.Baking temperature is 65 ℃, and stoving time is 5 hours, and the positive photoresist of filling has covered the SU-8 structure;
(5) adopt the mode of wet grinding polishing that the glue-line surface after filling is repaired, carry out grinding and polishing with positive photoresist, in process of lapping, constantly spray chilled water at sand paper, in order to reduce the friction force in the process of lapping, and the glue material under will grinding in time takes away, and removes unnecessary unnecessary positive glue; Grind until expose till the SU-8 glue of bottom, obtain an interim substrate of smooth positive photoresist, and the flatness of whole glue-line is repaired;
(6) make the 3rd layer of SU-8 glue.The spin coating of the 3rd layer SU-8 glue, front baking processing, exposure and rear baking processing procedure are all identical with ground floor;
(7) to the photoresist developing after the exposure of the 3rd layer photoetching, bake process after the developing process of the 3rd layer of SU-8 glue and development are finished is all with front two-layer identical, because, the developing solution dissolution positive photoresist of SU-8 glue, so dissolved the positive photoresist sacrifice layer of filling, finished the making of mould.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108181789A (en) * | 2017-12-27 | 2018-06-19 | 北京百奥芯科技有限公司 | A kind of photoetching glue pattern plate processing method for the transfer of PDMS chips |
| CN108663899A (en) * | 2017-04-01 | 2018-10-16 | 上海凸版光掩模有限公司 | The manufacturing method of mask based on Chemical enhancement photoresist and electron beam exposure |
| CN110054142A (en) * | 2019-04-29 | 2019-07-26 | 太原理工大学 | A kind of air filtration film and preparation method thereof based on MEMS technology |
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| CN108663899A (en) * | 2017-04-01 | 2018-10-16 | 上海凸版光掩模有限公司 | The manufacturing method of mask based on Chemical enhancement photoresist and electron beam exposure |
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| CN110054142A (en) * | 2019-04-29 | 2019-07-26 | 太原理工大学 | A kind of air filtration film and preparation method thereof based on MEMS technology |
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Application publication date: 20131016 |