CN1987652A - Photoresist coating device and its method - Google Patents
Photoresist coating device and its method Download PDFInfo
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- CN1987652A CN1987652A CN 200510111675 CN200510111675A CN1987652A CN 1987652 A CN1987652 A CN 1987652A CN 200510111675 CN200510111675 CN 200510111675 CN 200510111675 A CN200510111675 A CN 200510111675A CN 1987652 A CN1987652 A CN 1987652A
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Abstract
The spray equipment includes following parts: nozzle for spray coating photoresist; clipping slot for placing at least one nozzle for photoresist; grasping arm in use for grasping, moving and lifting the nozzle; load supporting table for loadbearing wafer to be sprayed by the nozzle; rotary mechanism for rotating the table; being setup in the clipping slot, pseudo nozzle is in use for calibrating concentricity and height between nozzle and surface of a wafer; photoresist supply system. The invention also discloses method for spray coating photoresist. The method includes steps: grasping arm grasps the pseudo nozzle to calibrate concentricity and height between nozzle and surface of a wafer; grasping arm grasps the nozzle to move to surface of wafer needed to spray coating photoresist; spray coating photoresist onto surface of the wafer.
Description
Technical field
The present invention relates to a kind of photoresist coating unit that is used for photoetching process, particularly a kind of in photo-etching technological process, photoresist coating unit and method that the position between photoresist shower nozzle and the wafer can be accurately positioned.
Background technology
Photoetching process be use the most frequently in the chip fabrication techniques, one of the technology of most critical, every semiconductor element, photoelectric device etc., all need the basic composition unit of required element and the mask pattern of circuit to be transferred on the photoresist figure of substrate surface, for example on wafer or the glass substrate with photoetching process.Usually the basic technology of photoetching comprises three big steps such as gluing, exposure and development.The purpose of coating technique be set up in wafer surface thin and evenly and do not have a photoresist film of defective.Coating technique at present commonly used is to adopt the dynamically method of spraying, earlier wafer is placed on the crystal chip bearing platform of photoresist coating unit, and plummer is with low speed rotation then, this moment the photoresist nozzle with jet-coating photoresit in wafer surface.The effect of low speed rotation is to help the initial diffusion of photoresist.Can reach uniform photoresist film with more a spot of photoresist in this way.After photoresist extended, plummer accelerates to be thrown at a high speed photoresist away and makes the photoresist expansion obtain photoresist film.
Thickness that photoresist film is final and homogeneity are by the decisions such as dry attribute of photoresist viscosity, surface tension, photoresist.The patent No. is the apparatus and method that the Korean Patent of ZL98101653.7 discloses a kind of jet-coating photoresit, its photoresist sprays with scan mode, as shown in Figure 1, the rotating speed of wafer 11 is with respect to different and different by the position of spraying photoresist on the wafer, thereby minimizing is used for the consumption of the photoresist of coating.The mode of its spraying is to spray photoresist from the edge at 10 pairs of described wafers 11 of nozzle in its centre scan, and in scanning process, the rotational speed of wafer is along with nozzle increases to moving of center gradually from the edge.There is complicated mechanical relationship in the factors such as acceleration of the speed of every bit, centrifugal force, surface tension, shower nozzle translational speed, wafer rotation on the homogeneity of the photoresist film thickness of this spraying method and the wafer, are difficult to accurate control.Thickness that photoresist film is final and homogeneity are very important, if utilize the photoresist film of membrane thickness unevenness to carry out photoetching process, (critical dimension CD), and then reduces yield of products can to badly influence the critical dimension of semiconductor element lines.In practice, the decisions such as dry attribute of photoresist viscosity, surface tension, photoresist are the self properties of photoresist, and whether photoresist liquid is begun to expand by the center of circle of wafer photoresist film final thickness and homogeneity are played crucial effects.That is to say that the photoresist nozzle is will be exactly concentric and be positioned at the wafer top and determine height with wafer, glue can be dropped in the center of wafer when spraying glue like this, just can make its surface form the uniform photoresist film of thickness behind the wafer high speed rotating.The concentricity of adjusting photoresist shower nozzle and wafer and the photoresist shower nozzle means apart from the height of wafer are not provided in the photoresist coating unit of prior art, can only estimate adjustment by the slip-stick artist, the result is very inaccurate, and all need to adjust before each photoetching, very inconvenient and be unfavorable for enhancing productivity.Therefore need accurately to locate the concentricity of photoresist shower nozzle and wafer and highly and easy to use photoresist coating unit and method.
Summary of the invention
The purpose of this invention is to provide a kind of concentricity and height and photoresist coating unit and the method thereof easy to use that can accurately calibrate photoresist nozzle and wafer surface.
For achieving the above object, a kind of jet-coating photoresit device provided by the invention comprises:
The nozzle of spraying photoresist;
Place the nozzle draw-in groove of at least one photoresist nozzle;
Grasp the photoresist nozzle and can drive nozzle and move nozzle crawl arm with lifting;
Carrying needs the crystal chip bearing platform of the wafer of spraying photoresist;
Drive the rotating mechanism that the crystal chip bearing platform is rotated;
Place the concentricity of nozzle draw-in groove, calibration nozzle and wafer surface and the pseudo-nozzle of height; And
Control system, the mobile and memory nozzle crawl arm of control nozzle crawl arm grasps the reference position of nozzle and the speed that rotating mechanism drives the rotation of crystal chip bearing platform;
For colloid system, for described nozzle supply photoresist.
The crystal chip bearing platform has center pit and sucker.
Described pseudo-nozzle comprises outer cover and scale axle, and the scale axle places in the outer cover, and the physical dimension of described outer cover is identical with the physical dimension of nozzle, and described scale axle comprises axis body and stop cap, and the stop cap is positioned at the axis body top.
Be provided with step-like through hole in the described outer cover vertically, step-like through hole upper part diameter is greater than the diameter of step-like through hole bottom; The diameter of the axis body of described scale axle matches with the diameter of described step-like through hole bottom, and the diameter of the stop cap of described scale axle matches with the internal diameter of the top through hole of described outer cover.
Described scale shaft extension goes out the rear surface length-specific of described outer cover.
Ad-hoc location in described outer cover appearance side is provided with a tapped through hole.
The bottom of described scale axle is provided with scale mark.
The minimum resolution of described scale axle scale mark is 0.5mm.
Correspondingly, the present invention also provides a kind of method of utilizing above-mentioned jet-coating photoresit device spraying photoresist, comprises step:
A. the nozzle crawl arm grasps the concentricity and the height of pseudo-nozzle calibration nozzle and wafer surface;
B. the nozzle crawl arm grasps the wafer surface that nozzle moves to needs the spraying photoresist;
C. to wafer surface spraying photoresist.
Described step a further comprises:
A1. the axis body of the scale axle of pseudo-nozzle is passed the lower through-hole of outer cover and stretch out the lower end length-specific of described outer cover;
A2. screw in scale axle in the tapped through hole stationary housings of ad-hoc location of outside surface with screw;
A3. the nozzle crawl arm moves to the nozzle draw-in groove and grasps pseudo-nozzle, and pseudo-nozzle is moved to crystal chip bearing platform top;
A4. the nozzle crawl arm drives pseudo-nozzle decline, makes the scale axle that stretches out the outer cover lower end pass the center pit of crystal chip bearing platform;
A5. the nozzle crawl arm promotes pseudo-nozzle, test piece is placed on the surface of crystal chip bearing platform;
A6. the nozzle crawl arm drives pseudo-nozzle decline, makes the lower surface of scale axle be affixed on the test piece surface;
A7. control system memory nozzle crawl arm this moment grasps the position of nozzle.
Described step b further comprises:
B1. the nozzle crawl arm is put into the nozzle draw-in groove with pseudo-nozzle, grasps the actual nozzle that uses;
B2. remove test piece, the wafer that needs is sprayed photoresist is placed on the crystal chip bearing platform;
Described step c further comprises:
C1. the nozzle crawl arm moves to memory area with nozzle;
C2. rotating mechanism drive crystal chip bearing platform begins low speed rotation, and nozzle begins to wafer surface spraying photoresist;
C3. the crystal chip bearing platform obtains uniform photoresist film with high speed rotating.
By moving of control system control nozzle crawl arm, and the reference position of memory nozzle crawl arm extracting nozzle, and the rotating speed of crystal chip bearing platform.
By for colloid system being nozzle supply photoresist.
The bottom of described scale axle is provided with scale mark.
The minimum resolution of described scale axle scale mark is 0.5mm.
Owing to adopted technique scheme, compared with prior art, the present invention has the following advantages:
(1) the present invention has adopted and the identical pseudo-nozzle of nozzle profile size, carrying out before photoetching process formally sprays photoresist, at first grasp pseudo-nozzle by control system control nozzle crawl arm, locate the concentricity of nozzle and crystal chip bearing platform by the center pit that makes scale axle in the pseudo-nozzle pass the crystal chip bearing platform, because the placement of wafer is the center of circle and the concentric mode of crystal chip bearing platform central through hole with wafer, also just guaranteed the concentric of nozzle and wafer so pseudo-nozzle and crystal chip bearing platform are concentric.Calibrate the height of photoresist nozzle with test piece apart from wafer surface, by making the scale shaft extension in the pseudo-nozzle go out pseudo-nozzle lower surface predetermined length, when the bottom surface of scale axle touches test piece in season, the lower surface of pseudo-nozzle is exactly the predetermined length that the scale shaft extension goes out pseudo-nozzle lower surface apart from the height on test piece surface, and this length is exactly the height of the lower surface of pseudo-nozzle apart from the test piece surface.Because the consistency of thickness of test piece and wafer, in a single day so accurately located the height of the lower surface of pseudo-nozzle apart from the test piece surface, nozzle has also just accurately been located apart from the height of wafer.By moving and the position of memory nozzle crawl arm above the crystal chip bearing platform of control system control nozzle crawl arm, when changing nozzle, also can accurately locate concentricity and height that nozzle and wafer surface are adjusted.Like this, in the process of spraying, the photoresist liquid of nozzle ejection just can drop on the center of circle of wafer exactly, has just formed uniform photoresist film in wafer surface through the plummer high speed rotating.
(2) calibrate the concentricity of photoresist nozzle and wafer surface with height and by the position after the control system memory calibration owing to utilize the nozzle crawl arm to grasp pseudo-nozzle, grasp the position that nozzle runs to memory by the nozzle crawl arm again, nozzle is just concentric exactly and be positioned at predetermined altitude with wafer surface, make as long as just can make the nozzle of follow-up extracting accurately be positioned the wafer top by primary calibration, needn't adjust repeatedly, improve the efficient of jet-coating photoresit in the photoetching process.
Description of drawings
Fig. 1 is the jet-coating photoresit device synoptic diagram of prior art;
Fig. 2 is the structural representation of jet-coating photoresit device of the present invention;
Fig. 3 is pseudo-nozzle profile figure of the present invention;
Fig. 4 is the sectional view of pseudo-nozzle of the present invention;
Fig. 5 is pseudo-nozzle calibration photoresist nozzle and the concentricity of wafer surface and the key diagram of height for the present invention clamps;
Fig. 6 clamps the constitutional diagram of nozzle spraying photoresist for jet-coating photoresit device of the present invention;
Fig. 7 sprays the method flow diagram of photoresist for the present invention.
Symbol description:
10, nozzle 11, wafer,
20, jet-coating photoresit device 21, crystal chip bearing platform,
22, pseudo-nozzle 23, nozzle
24, nozzle draw-in groove 25, nozzle crawl arm
26, rotating mechanism 31, outer cover
32, scale axle 33, tapped through hole
41, outer cover 42, scale axle
43, stop cap 51, outer cover
52, scale axle 53, nozzle crawl arm
54, test piece 55, crystal chip bearing platform
56, rotating mechanism 57, pseudo-nozzle
58, crystal chip bearing platform center pit 59, tapped through hole
61, nozzle crawl arm 62, nozzle
63, wafer 64, crystal chip bearing platform
65, rotating mechanism
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.
Jet-coating photoresit device of the present invention plays in photo-etching technological process jet-coating photoresit in wafer surface so that form the key effect of uniform photoresist film in wafer surface.The present invention utilizes the concentricity of pseudo-nozzle calibration nozzle and wafer and the nozzle height apart from wafer surface.In a preferred embodiment, the scale shaft extension in the pseudo-nozzle is gone out outer cover lower surface 5 ± 0.1mm, also being about to nozzle is 5 ± 0.1mm apart from the height control of wafer surface.With preferred embodiment implementation procedure of the present invention and essential content place are described.
Fig. 2 is the structural representation of jet-coating photoresit device of the present invention.As shown in Figure 2, jet-coating photoresit device of the present invention comprises crystal chip bearing platform 21, rotating mechanism 26, nozzle draw-in groove 24, the nozzle 23 that sprays photoresist, calibration is with pseudo-nozzle 22, nozzle crawl arm 25, control system and supply colloid system.Crystal chip bearing platform 21 is used to carry the wafer of needs spraying photoresist, and rotating mechanism 26 is used to drive the crystal chip bearing platform and is rotated.Surface at crystal chip bearing platform 21 has sucker, and it is connected with air-channel system, and air-channel system forms negative pressure on the surface of crystal chip bearing platform, thereby chip sucking can be attached to the surface of crystal chip bearing platform 21.The center of crystal chip bearing platform 21 is provided with center pit, and wafer is placed on the crystal chip bearing platform 21 in the concentric mode of its center of circle and center pit.Arranged alongside at crystal chip bearing platform 21 has nozzle draw-in groove 24, is used to place the nozzle 23 of at least one spraying photoresist.Usually place several nozzles 23 on the nozzle draw-in groove 24, the connecting line of nozzle 23 and different photoresist reservoir vessel connections provide different photoresists to cooperate different photoetching processes.Usually have idle position on the nozzle draw-in groove 24, the nozzle that pseudo-nozzle 22 of the present invention promptly uses with reality is placed side by side on the position of free time of nozzle draw-in groove 24.Pseudo-nozzle 22 is used to calibrate the concentricity and the height of nozzle and wafer surface, and the nozzle that uses with reality purpose placed side by side is to grasp for the ease of nozzle crawl arm 25 to drive also that nozzle moves and lifting.Jet-coating photoresit device of the present invention also comprises control system, controls nozzle crawl arm 25 by the Control Software of etching system itself and grasps the moving direction of nozzle and remember the reference position that the nozzle crawl arm grasps the nozzle stop.Comprise in addition for colloid system, be used to the required photoresist of nozzle 23 supplies.The spraying of photoresist when moving to the wafer top by control system control nozzle crawl arm 25 extracting nozzles 23.
Fig. 3 is the outside drawing of the pseudo-nozzle of jet-coating photoresit device of the present invention.As shown in Figure 3, pseudo-nozzle of the present invention is made up of outer cover 31 and scale axle 32 two parts.Scale axle 32 stretches out outer cover 31 rear surfaces.The physical dimension of outer cover 31 is identical with the actual nozzle that uses, so that guarantee the consistance of calibration.The outside surface of outer cover 31 has screw thread, but spiral shell is located at the nozzle crawl arm.Be provided with a tapped through hole 33 at the outside surface of outer cover near the position of lower end, but make it unlikely and come off by a screw being screwed in scale axles 32 in the threaded hole stationary housings 31.
Fig. 4 is the sectional view of the pseudo-nozzle of jet-coating photoresit device of the present invention.Referring to Fig. 4, pseudo-nozzle comprises outer cover 41 and scale axle 42 two parts, and the scale axle places in the outer cover in use.It is identical with the physical dimension of nozzle that the physical dimension of outer cover is designed to be, and top is right cylinder, and the bottom is a cone.Be provided with step-like through hole in outer cover vertically, the diameter of step-like through hole the first half is greater than the diameter of step-like through hole the latter half.The top of scale axle has stop cap 43, and the axis body diameter of scale axle 42 is designed to match with the diameter of outer cover interior step shape through hole the latter half, the lower end that makes the axis body of scale axle 42 can pass outer cover interior step shape through hole the latter half and stretch out outer cover.The diameter of the stop cap 43 at the axis body top of scale axle 42 is designed to match with the internal diameter of the top through hole of described outer cover.Like this, when reaching certain-length in the lower end that axis body passes outer cover interior step shape through hole the latter half and stretches out outer cover, stop cap 43 is just run into step track lifting stopping function, and scale axle 42 can not dropped out from outer cover.The scale axle 42 of the pseudo-nozzle of jet-coating photoresit device of the present invention stretches out the rear surface length-specific of outer cover, and length-specific in a preferred embodiment is made as 5 ± 0.5mm.Accurate in order to guarantee that the scale shaft extension goes out the length of rear surface of outer cover, indicate scale mark in the bottom of scale axle 42, and the distance between the every scale mark of scale axle scale mark is 0.5mm.Just can calculate the exact length that the scale shaft extension goes out the rear surface of outer cover by figuring the scale mark that the scale shaft extension goes out the rear surface of outer cover like this.
Fig. 5 is pseudo-nozzle calibration photoresist nozzle and the concentricity of wafer surface and the key diagram of height for the present invention clamps.As shown in Figure 5, but the just scale axle in the stationary housings of the threaded hole 59 by screw being screwed in the outer cover surface, thus the length that the scale shaft extension goes out the rear surface of outer cover is fixed.Control system control nozzle crawl arm 53 grasps pseudo-nozzle 57 and will drive pseudo-nozzle and moves to crystal chip bearing platform 55 tops, and the pseudo-nozzle 57 feasible scale axles 52 that stretch out the rear surface of outer cover that descend subsequently pass the center pit 58 on the crystal chip bearing platform.Locate the concentricity of pseudo-nozzle 57 and crystal chip bearing platform 55 by the center pit 58 that makes scale axle 52 in the pseudo-nozzle 57 pass the crystal chip bearing platform, because the placement of wafer is in the concentric mode of the center of circle of wafer and crystal chip bearing platform 55 center pits 58, the physical dimension of pseudo-nozzle 57 outer covers is identical with the physical dimension of the actual nozzle that uses, and has also just guaranteed the concentric of nozzle and wafer so pseudo-nozzle 57 and crystal chip bearing platform 55 are concentric.Test piece 54 is placed on the crystal chip bearing platform 55, calibrate the height of photoresist nozzle with test piece 54 apart from wafer surface, the length that scale axle 52 in the pseudo-nozzle 57 stretches out pseudo-nozzle lower surface is set to 5mm, when the bottom surface of scale axle 52 touches test piece 54 in season, because the lower surface of pseudo-nozzle 57 is the length that scale axle 52 stretches out pseudo-nozzle 57 lower surfaces apart from the height on test piece 54 surfaces, the lower surface of the just pseudo-nozzle 57 of this length is apart from the height on test piece 54 surfaces.Because test piece 54 and the actual consistency of thickness that will spray the wafer of photoresist, in a single day so accurately located the height of the lower surface of pseudo-nozzle 57 apart from test piece 54 surfaces, nozzle has also just been determined apart from the height of the 5mm of wafer.
Fig. 6 clamps the constitutional diagram of nozzle spraying photoresist for jet-coating photoresit device of the present invention.As shown in Figure 6, control the mobile of nozzle crawl arm 61 and the position of memory nozzle crawl arm 61 above crystal chip bearing platform 64 by control system, when with pseudo-nozzle exchange being the nozzle 62 of actual use, also can accurately locate concentricity and the height that adjust on nozzle 62 and wafer 63 surfaces.Like this, in the process of spraying, the photoresist liquid of nozzle 62 ejections just can drop on the center of circle of wafer 63 exactly, drives plummer 64 high speed rotating through rotating mechanism 65 and has just formed uniform photoresist film on wafer 63 surfaces.
Fig. 7 sprays the method flow diagram of photoresist for the present invention.The present invention utilizes the method for jet-coating photoresit device spraying photoresist mainly to comprise three steps, that is:
1. the nozzle crawl arm grasps the concentricity and the height of pseudo-nozzle calibration nozzle and wafer surface;
2. the nozzle crawl arm grasps the wafer surface that nozzle moves to needs the spraying photoresist;
3. to wafer surface spraying photoresist.
Wherein, step 1 specifically comprises following several steps again:
The axis body of the scale axle of pseudo-nozzle passed the lower through-hole of outer cover and stretch out the lower end length-specific of described outer cover;
Screw in the scale axle in the tapped through hole stationary housings of ad-hoc location of outside surface with screw;
The nozzle crawl arm moves to the nozzle draw-in groove and grasps pseudo-nozzle, and pseudo-nozzle is moved to crystal chip bearing platform top;
The nozzle crawl arm drives pseudo-nozzle and descends, and makes the scale axle that stretches out the outer cover lower end pass the center pit of crystal chip bearing platform;
The nozzle crawl arm promotes pseudo-nozzle, test piece is placed on the surface of crystal chip bearing platform;
The nozzle crawl arm drives pseudo-nozzle and descends, and makes the lower surface of scale axle be affixed on the test piece surface;
Control system memory nozzle crawl arm this moment grasps the position of nozzle.
Step 2 further comprises:
The nozzle crawl arm is put into the nozzle draw-in groove with pseudo-nozzle, grasps the actual nozzle that uses;
Remove test piece, the wafer that needs is sprayed photoresist is placed on the crystal chip bearing platform.
Step 3 also comprises:
The nozzle crawl arm moves to memory area with nozzle;
The crystal chip bearing platform begins low speed rotation, and nozzle begins to wafer surface spraying photoresist;
Thereby crystal chip bearing platform high speed rotating obtains uniform photoresist film in wafer surface.
By said process, jet-coating photoresit device of the present invention can accurately be calibrated the concentricity and the height of photoresist nozzle and wafer surface.Calibrate the concentricity of photoresist nozzle and wafer surface with height and by the position after the control system memory calibration owing to utilize the nozzle crawl arm to grasp pseudo-nozzle, grasp the position that nozzle runs to memory by the nozzle crawl arm again, nozzle is just concentric exactly and be positioned at predetermined altitude with wafer surface, make as long as just can make the nozzle of follow-up extracting accurately be positioned the wafer top by primary calibration, needn't adjust repeatedly, improve the efficient of jet-coating photoresit in the photoetching process.
Though described the present invention by embodiment, those of ordinary skills know, the present invention has many distortion and variation and do not break away from spirit of the present invention, wish that appended claim comprises these distortion and variation and do not break away from spirit of the present invention.
Claims (16)
1, a kind of jet-coating photoresit device, described device comprises:
The nozzle of spraying photoresist;
Place the nozzle draw-in groove of at least one photoresist nozzle;
Grasp the photoresist nozzle and can drive nozzle and move nozzle crawl arm with lifting;
Carrying needs the crystal chip bearing platform of the wafer of spraying photoresist;
Drive the rotating mechanism that the crystal chip bearing platform is rotated;
Place the concentricity of nozzle draw-in groove, calibration nozzle and wafer surface and the pseudo-nozzle of height; And
Control system, the mobile and memory nozzle crawl arm of control nozzle crawl arm grasps the reference position of nozzle and the speed that rotating mechanism drives the rotation of crystal chip bearing platform;
For colloid system, for described nozzle supply photoresist.
2, jet-coating photoresit device as claimed in claim 1, it is characterized in that: the crystal chip bearing platform has center pit and sucker.
3, jet-coating photoresit device as claimed in claim 1, it is characterized in that: described pseudo-nozzle comprises outer cover and scale axle, and the scale axle places in the outer cover, and the physical dimension of described outer cover is identical with the physical dimension of nozzle, described scale axle comprises axis body and stop cap, and the stop cap is positioned at the axis body top.
4, jet-coating photoresit device as claimed in claim 3 is characterized in that: be provided with step-like through hole in the described outer cover vertically, step-like through hole upper part diameter is greater than the diameter of step-like through hole bottom; The diameter of the axis body of described scale axle matches with the diameter of described step-like through hole bottom, and the diameter of the stop cap of described scale axle matches with the internal diameter of the top through hole of described outer cover.
5, jet-coating photoresit device as claimed in claim 4 is characterized in that: described scale shaft extension goes out the rear surface length-specific of described outer cover.
6, jet-coating photoresit device as claimed in claim 3 is characterized in that: the ad-hoc location in described outer cover appearance side is provided with a tapped through hole.
7, as claim 3 or 4 described jet-coating photoresit devices, it is characterized in that: the bottom of described scale axle is provided with scale mark.
8, jet-coating photoresit device as claimed in claim 7 is characterized in that: the minimum resolution of described scale axle scale mark is 0.5mm.
9, a kind of method of utilizing the described jet-coating photoresit device spraying of claim 1 photoresist comprises step:
A. the nozzle crawl arm grasps the concentricity and the height of pseudo-nozzle calibration nozzle and wafer surface;
B. the nozzle crawl arm grasps the wafer surface that nozzle moves to needs the spraying photoresist;
C. to wafer surface spraying photoresist.
10, the method for spraying photoresist as claimed in claim 9 is characterized in that described step a further comprises:
A1. the axis body of the scale axle of pseudo-nozzle is passed the lower through-hole of outer cover and stretch out the lower end length-specific of described outer cover;
A2. screw in scale axle in the tapped through hole stationary housings of ad-hoc location of outside surface with screw;
A3. the nozzle crawl arm moves to the nozzle draw-in groove and grasps pseudo-nozzle, and pseudo-nozzle is moved to crystal chip bearing platform top;
A4. the nozzle crawl arm drives pseudo-nozzle decline, makes the scale axle that stretches out the outer cover lower end pass the center pit of crystal chip bearing platform;
A5. the nozzle crawl arm promotes pseudo-nozzle, test piece is placed on the surface of crystal chip bearing platform;
A6. the nozzle crawl arm drives pseudo-nozzle decline, makes the lower surface of scale axle be affixed on the test piece surface;
A7. control system memory nozzle crawl arm this moment grasps the position of nozzle.
11, the method for spraying photoresist as claimed in claim 9 is characterized in that described step b further comprises:
B1. the nozzle crawl arm is put into the nozzle draw-in groove with pseudo-nozzle, grasps the actual nozzle that uses;
B2. remove test piece, the wafer that needs is sprayed photoresist is placed on the crystal chip bearing platform;
12, the method for spraying photoresist as claimed in claim 9 is characterized in that described step c further comprises:
C1. the nozzle crawl arm moves to memory area with nozzle;
C2. rotating mechanism drive crystal chip bearing platform begins low speed rotation, and nozzle begins to wafer surface spraying photoresist;
C3. the crystal chip bearing platform obtains uniform photoresist film with high speed rotating.
13, as the method for claim 9 or 10 described spraying photoresists, it is characterized in that: by moving of control system control nozzle crawl arm, and the reference position of memory nozzle crawl arm extracting nozzle, and the rotating speed of crystal chip bearing platform.
14, the method for spraying photoresist as claimed in claim 12 is characterized in that: by for colloid system being nozzle supply photoresist.
15, the method for spraying photoresist as claimed in claim 10 is characterized in that: the bottom of described scale axle is provided with scale mark.
16, jet-coating photoresit device as claimed in claim 15 is characterized in that: the minimum resolution of described scale axle scale mark is 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116754A CN100561346C (en) | 2005-12-19 | 2005-12-19 | Photoresist coating unit and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116754A CN100561346C (en) | 2005-12-19 | 2005-12-19 | Photoresist coating unit and method thereof |
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| CN1987652A true CN1987652A (en) | 2007-06-27 |
| CN100561346C CN100561346C (en) | 2009-11-18 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101221361B (en) * | 2008-01-18 | 2010-06-09 | 友达光电股份有限公司 | Pipeline pressure balancing system |
| CN103084297A (en) * | 2011-10-27 | 2013-05-08 | 沈阳芯源微电子设备有限公司 | Liquid coating apparatus |
| CN103809380B (en) * | 2012-11-06 | 2016-11-30 | 沈阳芯源微电子设备有限公司 | Photoresist paste nozzle location pick device |
| CN107221398A (en) * | 2017-04-27 | 2017-09-29 | 辰硕电子(九江)有限公司 | A kind of side multilayer insulation means of defence of Zinc-Oxide Arrester valve block or MOV chips |
| CN108803241A (en) * | 2017-04-28 | 2018-11-13 | 上海微电子装备（集团）股份有限公司 | Light-sensitive lacquer sprayer alignment device, method and photoresist coating unit |
| CN114200777A (en) * | 2021-12-21 | 2022-03-18 | 中国科学院光电技术研究所 | Square substrate clamping device |
| CN115097696A (en) * | 2022-08-26 | 2022-09-23 | 天霖(张家港)电子科技有限公司 | Optimize gummed developing machine |
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2005
- 2005-12-19 CN CNB2005101116754A patent/CN100561346C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221361B (en) * | 2008-01-18 | 2010-06-09 | 友达光电股份有限公司 | Pipeline pressure balancing system |
| CN103084297A (en) * | 2011-10-27 | 2013-05-08 | 沈阳芯源微电子设备有限公司 | Liquid coating apparatus |
| CN103809380B (en) * | 2012-11-06 | 2016-11-30 | 沈阳芯源微电子设备有限公司 | Photoresist paste nozzle location pick device |
| CN107221398A (en) * | 2017-04-27 | 2017-09-29 | 辰硕电子(九江)有限公司 | A kind of side multilayer insulation means of defence of Zinc-Oxide Arrester valve block or MOV chips |
| CN108803241A (en) * | 2017-04-28 | 2018-11-13 | 上海微电子装备（集团）股份有限公司 | Light-sensitive lacquer sprayer alignment device, method and photoresist coating unit |
| CN114200777A (en) * | 2021-12-21 | 2022-03-18 | 中国科学院光电技术研究所 | Square substrate clamping device |
| CN114200777B (en) * | 2021-12-21 | 2023-06-13 | 中国科学院光电技术研究所 | Square substrate clamping device |
| CN115097696A (en) * | 2022-08-26 | 2022-09-23 | 天霖(张家港)电子科技有限公司 | Optimize gummed developing machine |
| CN115097696B (en) * | 2022-08-26 | 2022-11-18 | 天霖(张家港)电子科技有限公司 | Optimize gummed developing machine |
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| CN100561346C (en) | 2009-11-18 |
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