CN1986905A - Crystal growth device and method - Google Patents
Crystal growth device and method Download PDFInfo
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- CN1986905A CN1986905A CNA2005101324051A CN200510132405A CN1986905A CN 1986905 A CN1986905 A CN 1986905A CN A2005101324051 A CNA2005101324051 A CN A2005101324051A CN 200510132405 A CN200510132405 A CN 200510132405A CN 1986905 A CN1986905 A CN 1986905A
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Abstract
A crystal growing apparatus and method features that a lifting tubular heat exchanger is arranged above the crucible, a chuck is arranged at lower end of said tubular heat exchanger, a seed crystal is installed on said chuck, and a gas tube for delivering helium to the bottom of said tubular heat exchanger is arranged in said tubular heat exchanger. The crystal growth method of the device mainly comprises the following steps: (1) heating by a resistance heater to melt the raw materials in the crucible; (2) welding seed crystals by controlling the power of the resistance heater and the flow of helium in the heat exchanger; (3) increasing helium amount, cooling seed crystal, and controlling crystal growth speed; (4) the heat exchanger is pulled upwards, the power of the resistance heater is reduced, and the crystal growth interface is pushed downwards; (5) after the crystal growth is finished, separating the crystal from the melt in the crucible, gradually cooling to room temperature, and finishing the crystal growth; because the crystal is not contacted with the melt and the crucible wall, the cooling time and the production period of the crystal are shortened.
Description
Technical field
The present invention relates to the crystal technique field, belong to a kind of device and method that is used for the thermal field crystal growth from melt.
Background technology
The device of existing heat-exchanging method crystal growth (seeing shown in Figure 2), its device is made of crucible 4, cartridge heater 2, heat exchanger 1 and thermal insulation layer 3, seed crystal 1 is positioned at crucible 4 bottom centre place, bottom centre outside crucible place be provided with one with the tubular heat exchange 1 that closely contacts at the bottom of the crucible, be provided with the pneumatic tube 7 that leads to tubular heat exchange inner top conveying helium in the tubular heat exchange.Crystal is in when growth, with well heater 2 heating that heats up, the solid material that is placed in the well heater central authorities crucible is molten into melt 6, controls the power of helium amount of cooling water and well heater in the heat exchanger simultaneously, and seed crystal is not melted, and well contacts with melt; Take away heat by helium gas flow in the change heat exchanger and pace of change control, realize control, along seed crystal crystal orientation growing crystal to crystalline growth velocity.Because the bottom of seed crystal in crucible, the crystalline direction of growth be expansion all around from bottom to top, after the whole crystallizations of raw material in the crucible are finished, cooling gradually.In this growth method crystal process of cooling, crucible and crystalline cooling shrinking percentage are inconsistent, and the crystal in the crucible by crucible extruding cracking, has a strong impact on the crystalline quality easily.
Summary of the invention
The device and method that the purpose of this invention is to provide a kind of crystal growth, it can shorten the crystal growth cycle, avoids crystal cleavage, improves the crystalline growth quality.
For achieving the above object, the present invention takes following design:
A kind of device of crystal growth, mainly include the resistance heater of a tubular, central authorities at the resistance heater of tubular are provided with a crucible, well heater outer setting in tubular has thermal insulation layer, it is characterized in that: crucible melt top have one can lifting the piped heat exchanger, the lower end of piped heat exchanger has a chuck, and seed crystal is housed on it.Reduce the piped heat exchanger, seed crystal is inserted in the melt, control the power of helium amount of cooling water and well heater in the heat exchanger well, seed crystal neither melts does not also grow up.Change helium gas flow and pace of change control in the heat exchanger simultaneously, take away heat, realize control crystal growth by the cooling seed crystal.
A kind of method of crystal growth, it mainly comprises the following steps:
(1), resistance heater heats up, and makes raw material fusing in the crucible, feeds helium cooling seed crystal simultaneously in heat exchanger, and seed crystal is not melted;
(2), the welding of seed crystal, the flow of helium makes the raw material in the crucible can fully be fused into melt in power by the controlling resistance well heater and the heat exchanger, and seed crystal neither melts also and do not grow up.
(3), increase amount of helium, reduce the temperature of seed crystal, seed crystal and melt contact position begin the crystallization crystal growth, growth interface is expanded with cambered surface, the crystalline speed of growth is determined by the speed that helium gas flow increases.
(4), when crystal growth reaches desired size, upwards lift heat exchanger, reduce the power of resistance heater simultaneously, crystal growth interface is down advanced, stop growing, owing in the process of crystal growth, lift up to crystal, in the crystal growing process, do not contact all the time with sidewall of crucible; Thereby eliminated original device sidewall of crucible to the crystalline stress influence, avoided the phenomenon of crystal cleavage, improved the crystalline quality;
(5), after crystal growth finishes, lift heat exchanger and make crystal throw off melt in the crucible, because crystal and crucible, melt extraction have shortened the crystalline temperature fall time, thus the shortening production cycle;
(6) crystal is cooled to room temperature, and crystal growth is finished.
Advantage of the present invention is: simple in structure,, technology is simple, easy to use, can improve the crystalline quality and shorten the production cycle.
Description of drawings
Fig. 1 is a structural representation of the present invention
Fig. 2 is the structural representation of prior art
Embodiment
Referring to shown in Figure 1: a kind of device of crystal growth, it mainly includes the resistance heater 2 of a tubular; Crucible 4 is positioned at the central authorities of the resistance heater of tubular, its top have one can lifting the piped heat exchanger, the lower end of piped heat exchanger has a chuck, and seed crystal is housed on it.In piped heat exchanger 1, be provided with and lead to the pneumatic tube 7 that piped heat exchanger inner bottom part is carried helium.The resistance heater outside of tubular then is equipped with thermal insulation layer 3.
Resistance heater 2 can be made the good tubular of symmetry with graphite material, and crucible 4 is in resistance heater 2 central authorities of tubular; The effect of heat exchanger 1 is that seed crystal 5 is not melted, and the speed of controlled chilling seed crystal, realizes the control to crystalline growth velocity.
A kind of method of crystal growth, it mainly comprises the following steps:
(1), selects Al
2O
3, 10Kg is placed in the crucible, and resistance heater is warming up to 2100 ℃, makes Al in the crucible
2O
3The raw material fusing feeds 5 liters of/minute helium cooling seed crystals simultaneously in heat exchanger, seed crystal is not melted;
(2), the welding of seed crystal, the flow of helium make the raw material in the crucible can fully be fused into melt, and seed crystal contacts well in power by the controlling resistance well heater and the heat exchanger with melt.
(3), progressively increase helium gas flow, the control crystalline growth velocity, seed crystal and melt contact position begin crystal growth, and growth interface is progressively expanded with cambered surface, the speed decision that the crystalline speed of growth is increased by helium gas flow.
(4), when crystal growth reaches desired size, lift heat exchanger, reduce the power of resistance heater simultaneously, reduce the temperature of melt, lower the temperature with suitable speed (as 1 ℃/hour), crystal growth interface is down advanced, finish up to crystal growth.
(5), after crystal growth finishes, lift heat exchanger crystal and melt are broken away from, with 3 ℃～200 ℃ of/hour speed coolings, until room temperature.Because crystal does not contact with melt, sidewall of crucible; Thereby in the temperature-fall period, eliminated melt, sidewall of crucible influences crystalline, has avoided the phenomenon of crystal cleavage, has improved the crystalline quality; Crystalline temperature fall time and production cycle have been shortened.
Claims (2)
1, a kind of device of crystal growth, mainly include the resistance heater of a tubular, central authorities at the resistance heater of tubular are provided with a crucible, well heater outer setting in tubular has thermal insulation layer, it is characterized in that: crucible melt top have one can lifting the piped heat exchanger, the lower end of piped heat exchanger has a chuck, and seed crystal is housed on the chuck, is provided with to lead to the pneumatic tube that piped heat exchanger inner bottom part is carried helium in the piped heat exchanger.
2, according to the method for the crystal growth of the described device of claim 1, it mainly comprises the following steps:
(1), selects Al
2O
3, 10Kg is placed in the crucible, and resistance heater is warming up to 2100 ℃, makes Al in the crucible
2O
3The raw material fusing feeds 5 liters of/minute helium cooling seed crystals simultaneously in heat exchanger, seed crystal is not melted;
(2), the welding of seed crystal, the flow of helium make the raw material in the crucible can fully be fused into melt, and seed crystal contacts well in power by the controlling resistance well heater and the heat exchanger with melt.
(3), progressively increase helium gas flow, the control crystalline growth velocity, seed crystal and melt contact position begin crystal growth, and growth interface is progressively expanded with cambered surface, the speed decision that the crystalline speed of growth is increased by helium gas flow.
(4), when crystal growth reaches desired size, lift heat exchanger, reduce the power of resistance heater simultaneously, promptly reduce the temperature of melt, lower the temperature with suitable speed (as 1C °/hour), crystal growth interface is down advanced, finish up to crystal growth.
(5), after crystal growth finishes, lift heat exchanger crystal and melt are broken away from, with 3 ℃～200 ℃ of/hour speed coolings, until room temperature.Because crystal do not contact with melt, sidewall of crucible: thus in the temperature-fall period, eliminated melt, sidewall of crucible influences crystalline, has avoided the phenomenon of crystal cleavage, has improved the crystalline quality; Crystalline temperature fall time and production cycle have been shortened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101324051A CN100404730C (en) | 2005-12-21 | 2005-12-21 | Crystal growth device and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101324051A CN100404730C (en) | 2005-12-21 | 2005-12-21 | Crystal growth device and method |
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| Publication Number | Publication Date |
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| CN1986905A true CN1986905A (en) | 2007-06-27 |
| CN100404730C CN100404730C (en) | 2008-07-23 |
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| CNB2005101324051A Active CN100404730C (en) | 2005-12-21 | 2005-12-21 | Crystal growth device and method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101967675A (en) * | 2010-11-01 | 2011-02-09 | 王楚雯 | Device for manufacturing single crystal ingots |
| CN102534779A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Preparation method of single component oxide crystal |
| CN102625864A (en) * | 2009-09-02 | 2012-08-01 | Gt晶体系统有限责任公司 | High-temperature process improvements using helium under regulated pressure |
| CN103160918A (en) * | 2013-02-26 | 2013-06-19 | 宏大中源太阳能股份有限公司 | Preparation furnace and preparation method of pseudo single crystal silicon |
| CN103695995A (en) * | 2013-12-26 | 2014-04-02 | 贵州省高新光电材料及器件研究院有限公司 | Growing method of carbon-doped sapphire crystals |
| CN105369349A (en) * | 2014-08-29 | 2016-03-02 | 苏州恒嘉晶体材料有限公司 | Heat exchange crystal growth system and cooling gas flow control method and device |
| CN114775037A (en) * | 2022-03-31 | 2022-07-22 | 苏州哥地光子技术有限公司 | Tellurium-zinc-cadmium crystal growth device and growth method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1249273C (en) * | 2003-07-11 | 2006-04-05 | 中国科学院上海光学精密机械研究所 | Growth method of titanium doped saphire laser crystal |
| CN100497756C (en) * | 2004-04-16 | 2009-06-10 | 云南省玉溪市蓝晶科技有限责任公司 | Sapphire (Al2O3 single crystal) growing technology |
-
2005
- 2005-12-21 CN CNB2005101324051A patent/CN100404730C/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102625864A (en) * | 2009-09-02 | 2012-08-01 | Gt晶体系统有限责任公司 | High-temperature process improvements using helium under regulated pressure |
| CN101967675A (en) * | 2010-11-01 | 2011-02-09 | 王楚雯 | Device for manufacturing single crystal ingots |
| CN101967675B (en) * | 2010-11-01 | 2014-05-07 | 王楚雯 | Device for manufacturing single crystal ingots |
| CN102534779A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Preparation method of single component oxide crystal |
| CN103160918A (en) * | 2013-02-26 | 2013-06-19 | 宏大中源太阳能股份有限公司 | Preparation furnace and preparation method of pseudo single crystal silicon |
| CN103695995A (en) * | 2013-12-26 | 2014-04-02 | 贵州省高新光电材料及器件研究院有限公司 | Growing method of carbon-doped sapphire crystals |
| CN103695995B (en) * | 2013-12-26 | 2015-11-25 | 贵州省高新光电材料及器件研究院有限公司 | A kind of growth method of carbon-doped sapphire crystal |
| CN105369349A (en) * | 2014-08-29 | 2016-03-02 | 苏州恒嘉晶体材料有限公司 | Heat exchange crystal growth system and cooling gas flow control method and device |
| CN105369349B (en) * | 2014-08-29 | 2018-11-09 | 苏州恒嘉晶体材料有限公司 | Heat exchange crystal growth system, cooling gas flow control methods and device |
| CN114775037A (en) * | 2022-03-31 | 2022-07-22 | 苏州哥地光子技术有限公司 | Tellurium-zinc-cadmium crystal growth device and growth method |
| CN114775037B (en) * | 2022-03-31 | 2024-05-14 | 苏州哥地光子技术有限公司 | Tellurium-zinc-cadmium crystal growth device and growth method |
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| Publication number | Publication date |
|---|---|
| CN100404730C (en) | 2008-07-23 |
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Effective date of registration: 20151222 Address after: 065000 No. 4 Lily Road, Langfang Development Zone, Hebei, China Patentee after: Youyan Photoelectric New Material Co.,Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: Beijing Guojing Infrared Optical Technology Co., Ltd. |
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