CN101967675A - Device for manufacturing single crystal ingots - Google Patents
Device for manufacturing single crystal ingots Download PDFInfo
- Publication number
- CN101967675A CN101967675A CN 201010532816 CN201010532816A CN101967675A CN 101967675 A CN101967675 A CN 101967675A CN 201010532816 CN201010532816 CN 201010532816 CN 201010532816 A CN201010532816 A CN 201010532816A CN 101967675 A CN101967675 A CN 101967675A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crucible
- heat
- crystal rod
- heat preservation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a device for manufacturing single crystal ingots. The device comprises a main body, a crucible, a main heater, a seed crystal chuck, a heat exchanger and a first heat insulation component, wherein the crucible is arranged in the main body; the main heater is arranged around the crucible; the seed crystal chuck is positioned above the crucible and used for clamping seed crystal; the heat exchanger is positioned between the top of the crucible and the seed crystal chuck, the seed crystal chuck passes through the heat exchanger in a lifting mode, and a cooling medium for cooling the seed crystal is introduced into the heat exchanger; and the first heat insulation component is arranged between the heat exchanger and the crucible. According to the device for manufacturing the single crystal ingots, the fluid for heat exchange can be introduced into the heat exchanger from the outside of the main body to control the heat exchange in the crucible so as to control directional solidification of partial melted seed crystal and melted fed material and realize full utilization of the fluid such as helium.
Description
Technical field
The present invention relates to single crystal rod and make the field, particularly relate to a kind of device of making the sapphire single-crystal ingot.
Background technology
Utilize in the device that kyropoulos makes the sapphire single-crystal ingot, existing because the sapphire feed can produce microbubble in melting process.The microbubble that is produced will be along the outside surface come-up of the sapphire crystal ingot in the growth.But utilize in the device of existing manufacturing sapphire single-crystal ingot, the speed of growth on the top of sapphire crystal ingot is very fast, thereby cause the crystal that bubble floating has been solidified to stop, be difficult for discharging, thereby cause easily forming in the sapphire single-crystal ingot micro-bubble and related defects.
In addition, in the device of existing manufacturing sapphire single-crystal ingot, sapphire single-crystal ingot and crucible periphery and the mutually bonding problem in bottom also take place easily, thereby bring adverse influence for the growth of sapphire single-crystal ingot.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in the prior art.For this reason, the present invention need provide a kind of device of making single crystal rod, and described device can improve the quality of sapphire single crystal rod for example and make full use of the utilising efficiency of cooling fluid.
Device according to manufacturing single crystal rod of the present invention comprises: main body; Be arranged on the intravital crucible of described master; Primary heater, described primary heater be arranged on described crucible around, be used to melt the feed that is contained in the crucible; Seed chuck, described seed chuck is positioned on the described crucible, is used for the clamping seed crystal; Heat exchanger, described heat exchanger are between the top and seed chuck of described crucible, and described seed chuck liftably passes and feeds heat-eliminating medium in described heat exchanger and the described heat exchanger so that described seed crystal is cooled off; With first heat preservation component, described first heat preservation component is arranged between described heat exchanger and the described crucible.
Device according to manufacturing single crystal rod of the present invention, by utilizing described heat exchanger, can be passed into the heat exchange of controlling in the described heat exchanger in the described crucible by the fluid that outside main body, will be used for heat exchange circularly, with the directional freeze of the feed of the seed crystal of controlling described partial melting and fusing, thereby realized that for example the fluidic of helium makes full use of.
In addition, the device of manufacturing single crystal rod according to the above embodiment of the present invention can also have following additional technical characterictic:
According to one embodiment of present invention, first heat preservation component is heat reflection screen and/or thermal insulation layer.The heat reflection screen is used for saving energy in the crucible with returning from the reflect heat of crucible, and thermal insulation layer can prevent that also the heat of crucible is by dissipation.
According to one embodiment of present invention, be provided with auxiliary heater under described first heat preservation component.Auxiliary heater is used in the starting stage heating of formation single crystal rod to prevent single crystal rod hypertrophy in a lateral direction, simultaneously also in order to prevent local overcooling.That is, also can control the transversely crystallization velocity of direction of single crystal rod by controlling this auxiliary heater.
According to one embodiment of present invention, the temperature field that produces of described first heat preservation component and auxiliary heater is controlled to the single crystal growing speed that makes towards the sidewall of crucible less than downward along the longitudinal single crystal growing speed in the starting stage of crystal growth.Thereby few in the single crystal rod transverse growth of the starting stage of crystal growth, the come-up that helps bubble in the melt is discharged, and has reduced bubble and the related defects in the crystal, has realized the good growth of single crystal rod.
According to one embodiment of present invention, the device of described manufacturing single crystal rod further comprises: the temperature control parts, described temperature control parts are arranged on the bottom center of described crucible.
Wherein, described temperature control parts are the temperature tunable heaters, to heat to prevent that single crystal rod from bonding to the bottom of crucible in the process that forms single crystal rod.
According to one embodiment of present invention, the device of described manufacturing single crystal rod further comprises: weighting unit, described weighting unit is connected to described seed chuck, be used to take by weighing crystalline weight, described temperature control parts and/or described primary heater bond to crucible bottom and/or sidewall and melt the monocrystalline that is bonded to described crucible when generation are bonding to prevent monocrystalline based on the detected result Be Controlled heating of weighting unit.
According to one embodiment of present invention, the device of described manufacturing single crystal rod further comprises: second heat preservation component, described second heat preservation component are arranged between described primary heater and the described main body; The 3rd heat preservation component, described the 3rd heat preservation component is located between described crucible bottom and the described main body.
Alternatively, described second heat preservation component is heat reflection screen and/or thermal insulation layer, and described the 3rd heat preservation component is heat reflection screen and/or thermal insulation layer.Wherein heat reflection screen can go back the reflect heat that radiates from crucible and well heater; The heat that thermal insulation layer also can prevent crucible is formed excessive thermograde to prevent crystals, thereby makes in crystallisation process by dissipation, and single crystal rod can be not bonding with the inwall of crucible, and the crystalline internal stress is also controlled.
Wherein, described heat reflection screen is formed by tungsten, molybdenum, miramint or graphite, and described thermal insulation layer is formed by heat preservation carbon felt.
According to one embodiment of present invention, described heat-eliminating medium is water or helium.
According to one embodiment of present invention, described primary heater is formed by tungsten, molybdenum, miramint or graphite.
According to one embodiment of present invention, described single crystal rod is the sapphire crystal ingot.
Device according to manufacturing single crystal rod of the present invention, form the temperature gradient field that control crystal longitudinal growth speed is higher than transverse growth speed by first heat preservation component and auxiliary heater in the starting stage of crystal growth, and prevent that by the temperature control parts single crystal rod from bonding to the bottom of crucible, thereby realized the good growth of described single crystal rod, reduced the bubble in the crystal, improved the quality of described sapphire single-crystal ingot, and extracted conveniently.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the structural representation of the device of manufacturing single crystal rod according to an embodiment of the invention; And
Fig. 2 is the part-structure synoptic diagram of the interior growing single-crystal ingot of crucible among Fig. 1.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, term " on ", close the orientation of indications such as D score, " preceding ", " back ", " left side ", " right side ", " top ", " end " or position is based on orientation shown in the drawings or position relation, only be the present invention for convenience of description rather than require the present invention therefore can not be interpreted as limitation of the present invention with specific orientation structure and operation.
Describe the device according to the manufacturing single crystal rod of the embodiment of the invention below with reference to accompanying drawings, wherein Fig. 1 is the structural representation of the device of manufacturing single crystal rod according to an embodiment of the invention.In addition, in following, will be example to make the sapphire single-crystal ingot, the device of making single crystal rod is described.
But; need to prove that the device of manufacturing single crystal rod of the present invention also can utilize the monocrystalline of making other types, for example silicon single-crystal, oxide compound (as yttrium aluminium garnet YAG etc.) monocrystalline etc.; be for exemplary purposes herein, rather than in order to limit protection scope of the present invention.
As Fig. 1-shown in Figure 2, the device according to the manufacturing single crystal rod of the embodiment of the invention comprises main body 1, crucible 2, primary heater 3, seed chuck 4, heat exchanger 5 and first heat preservation component 71, and wherein crucible 2 is arranged in the main body 1.
Primary heater 3 be arranged on crucible 2 around, be used to melt the feed that is contained in the crucible 2.Seed chuck 4 is positioned on the crucible 2, is used for the clamping seed crystal.Heat exchanger 5 is between the top and seed chuck 4 of crucible 2, and seed crystal passes and feeds heat-eliminating medium in heat exchanger 5 and the heat exchanger 5 so that seed crystal is cooled off.Alternatively, heat-eliminating medium is water or helium.
In the device 100 of above-mentioned manufacturing sapphire single-crystal ingot; main body 1, crucible 2 etc. can form the cylinder bodily form; but need to prove; main body 1, crucible 2 etc. also can form other shape; cuboid etc. for example; be for purposes of illustration herein, rather than in order to limit protection scope of the present invention.Be understandable that, can accommodate a plurality of primary heaters 3 in the main body 1.
Thus, by utilizing heat exchanger 5, heat-eliminating medium that can be by will being used for heat exchange outside main body 1 for example is passed into to water or circulated helium the heat exchange of controlling in the heat exchanger 5 in the crucible 2, with the directional freeze of the feed of the seed crystal of control section fusing and fusing, and the making full use of of heat-eliminating medium of having realized water for example or helium.
In one embodiment of the invention, first heat preservation component 71 is arranged between the top of heat exchanger 5 and crucible 2.Alternatively, first heat preservation component 71 is the heat reflection screen, and as depicted in figs. 1 and 2, heat reflection screen 7 is used for saving energy in the crucible 2 with returning from the reflect heat of crucible 2.Certainly, first heat preservation component 71 also can be thermal insulation layer, with the heat that prevents crucible by dissipation.Further, under the common influence of the insulation effect of the heat exchange action of heat exchanger 5 and first heat preservation component 71, the transverse temperature gradient of melt is little in the crucible, thereby make as shown in Figure 2 single crystal rod transversely the crystallization velocity of direction less than in a longitudinal direction crystallization velocity, described single crystal rod was roughly grown along vertical direction in the crystalline starting stage, promptly few in the single crystal rod transverse growth of the starting stage of crystal growth, therefore bubble in the melt can improve the quality of institute's crystalline single crystal rod easily along the outside surface come-up and the discharge crucible of single crystal rod.
In another embodiment of the present invention, under first heat preservation component 71, be provided with auxiliary heater 8.As depicted in figs. 1 and 2, auxiliary heater 8 is used in the starting stage heating of single crystal growing, with prevent single crystal rod starting stage of growth in hypertrophy in a lateral direction, simultaneously also in order to prevent local overcooling.That is, also can control the transversely crystallization velocity of direction of single crystal rod by controlling this auxiliary heater 8.In some of them example of the present invention, the temperature field that auxiliary heater produces in the controlled single crystal growing speed that makes towards the sidewall of crucible 2 made of the starting stage of single crystal growing greatly less than downward along the longitudinal single crystal growing speed, the crystal shape that generates as shown in Figure 2, this crystal shape is very beneficial for the come-up of bubble in the melt and discharges, thereby has promoted the quality of single crystal rod.When treating the growth of crystalline bottom near crucible bottom, enter the middle and later periods of single crystal growing, the power that reduces auxiliary heater 8 gradually makes crystalline transverse growth gradual slow carry out, thereby has realized the good growth of single crystal rod until stopping heating.
In one embodiment of the invention, the device of making single crystal rod further comprises weighting unit, weighting unit 9 is connected to seed chuck 4, be used to take by weighing crystalline weight, and according to the heating of weighing results control temperature control parts 6 and primary heater 3, according to the variation adjustment temperature control parts 6 of crystal weight and the heating power of primary heater 3, make crucible bottom and sidewall keep suitable temperature gradient, and prevent that seed crystal is bonded to the bottom and the sidewall of crucible 2.In single crystal rod crystalline process if when being bonded on the bottom of crucible 2 or the sidewall, this weighting unit 9 just can detect the unexpected variation of crystal weight, thereby triggering control signal, make temperature control parts 6 and/or primary heater 3 heat crucible is heated, be bonded to the monocrystalline of crucible 2 with fusing based on the detected result Be Controlled.In an example of the present invention, weighting unit 9 is located at outside the main body 1, for example seed chuck 4 vertically directly over.And in another example of the present invention, weighting unit 9 also can be located at the top of crucible 2 in the main body 1, for example be located at seed chuck 4 vertically directly over.
In one embodiment of the invention, the device of making single crystal rod further comprises second heat preservation component 72 and the 3rd heat preservation component 73, as shown in Figure 1.Second heat preservation component 72 is arranged between primary heater 3 and the main body 1, that is to say, second heat preservation component 72 is centered around the periphery of primary heater 3.The 3rd heat preservation component 73 is located between crucible 2 bottoms and the main body 1.
In an example of the present invention, second heat preservation component 72 and the 3rd heat preservation component 73 can be the heat reflection screen.Heat reflection screen can be used for reflecting crucible 2 and primary heater 3 to extraradial heat, and wherein the heat reflection screen separate the distance of being scheduled to the outside surface of crucible 2 and primary heater 3, and this heat reflection is shielded and the reflect heat that radiates from crucible 2 and well heater can be gone back.
In another example of the present invention, second heat preservation component 72 and the 3rd heat preservation component 73 can be thermal insulation layer, are used for the sidewall and the bottom of crucible 2 are incubated, thereby make in crystallisation process, single crystal rod can be not bonding with the bottom of crucible.In addition, the heat that this thermal insulation layer also can prevent crucible 2 is formed excessive thermograde by dissipation to prevent crystals.
Certainly, the present invention is not limited to this.Be understandable that, second heat preservation component 72 and the 3rd heat preservation component 73 must not be same heat reflection screen or thermal insulation layers, in some of them example of the present invention, second heat preservation component 72 can be the heat reflection that is centered around around the crucible 2 and shields and reflect the heat that gives off from crucible, and the 3rd heat preservation component 73 can be the heat that thermal insulation layer prevents that crucible bottom dissipation from going out.Certainly, in other example of the present invention, second heat preservation component 72 can be and is centered around crucible 2 thermal insulation layer all around, and the 3rd heat preservation component 73 can be the heat reflection screen.Be understandable that further second heat preservation component 72 and the 3rd heat preservation component 73 can also be heat reflection screen and the thermal insulation layers after the combination.
The heat reflection screen of mentioning in the foregoing description can be formed by tungsten, miramint or graphite, and thermal insulation layer is formed by heat preservation carbon felt.
In some embodiments of the invention, seed chuck 4 is 5-10rpm in the speed of rotation in seeding stage, its pulling speed be the 0.01-0.4 millimeter/hour, in the crystallisation process of seed crystal, seed chuck upwards promotes gradually from fast to slow, thereby can make single crystal rod form more even and single crystal growing better quality longitudinally.
According to one embodiment of present invention, described primary heater 3 is formed by tungsten, molybdenum, miramint or graphite.
With reference to Fig. 1-Fig. 2 the process of making the sapphire single-crystal ingot is described simply below.
At first sapphire polycrystalline feed is put in the crucible, and, utilized primary heater 3 to change material then vacuumizing in the main body 1.After the change material is finished, enter the seeding stage, this moment, seed crystal passed heat exchanger 5, entered melt, realized the seed crystal partial melting.Be passed into fluid in the heat exchanger 5 this moment, and flow rate of fluid is controlled to and keeps described seed crystal by partial melting changing the material stage, and make the speed rotation of seed chuck 4 with 5-10rpm, and upwards promote gradually, with the seeding process of control seed crystal.
After finishing, seeding begins the crystalline directional solidification growth, in the starting stage of crystal growth, the temperature field of auxiliary heater is controlled makes and makes towards the single crystal growing speed of the sidewall of crucible 2 much smaller than along the longitudinal single crystal growing speed, simultaneously by temperature control parts 6 in the process heating that forms single crystal rod to prevent that the single crystal rod longitudinal growth is to the bottom that is bonded to crucible 2.When treating the growth of crystalline bottom near crucible bottom, enter the middle and later periods of single crystal growing, the power that reduces auxiliary heater 8 this moment gradually makes crystalline transverse growth gradual slow carry out, thereby has realized the good growth of single crystal rod until stopping heating.
After single crystal rod was finished, insulation was to reduce the crystal internal stress, and slowly cooling is come out of the stove then.
As mentioned above, device according to manufacturing single crystal rod of the present invention, by utilizing described heat exchanger 5, can be passed into the heat exchange of controlling in the described heat exchanger 5 in the described crucible 2 by the fluid that outside main body 1, will be used for heat exchange circularly, with the directional freeze of the feed of the seed crystal of controlling described partial melting and fusing, thereby realized that for example the fluidic of helium makes full use of.In addition, form the temperature gradient field that control crystal longitudinal growth speed is higher than transverse growth speed by auxiliary heater, and prevent that by the temperature control parts single crystal rod from bonding to the bottom of crucible 2, thereby realized the good growth of described single crystal rod, improved the quality of described sapphire single-crystal ingot, and extracted conveniently.
In the description of this specification sheets, concrete feature, structure, material or characteristics that the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example description are contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete feature, structure, material or the characteristics of description can be with the suitable manner combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment under the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (13)
1. a device of making single crystal rod is characterized in that, comprising:
Main body;
Be arranged on the intravital crucible of described master;
Primary heater, described primary heater be arranged on described crucible around, be used to melt the feed that is contained in the crucible;
Seed chuck, described seed chuck is positioned on the described crucible, is used for the clamping seed crystal;
Heat exchanger, described heat exchanger are between the top and seed chuck of described crucible, and described seed chuck liftably passes and feeds heat-eliminating medium in described heat exchanger and the described heat exchanger so that described seed crystal is cooled off; With
First heat preservation component, described first heat preservation component is arranged between described heat exchanger and the described crucible.
2. the device of manufacturing single crystal rod according to claim 1 is characterized in that, first heat preservation component is heat reflection screen and/or thermal insulation layer.
3. the device of manufacturing single crystal rod according to claim 2 is characterized in that, is provided with auxiliary heater under described first heat preservation component.
4. the device of manufacturing single crystal rod according to claim 3, it is characterized in that the temperature field that described auxiliary heater produces is controlled to the single crystal growing speed that makes towards the sidewall of crucible less than downward along the longitudinal single crystal growing speed in the starting stage of crystal growth.
5. the device of manufacturing single crystal rod according to claim 1 is characterized in that, further comprises:
The temperature control parts, described temperature control parts are arranged on the bottom center of described crucible.
6. the device of manufacturing single crystal rod according to claim 5 is characterized in that, described temperature control parts are the temperature tunable heaters.
7. the device of manufacturing single crystal rod according to claim 5 is characterized in that, further comprises:
Weighting unit, described weighting unit is connected to described seed chuck, be used to take by weighing crystalline weight, described temperature control parts and/or described primary heater bond to crucible bottom and/or sidewall and melt the monocrystalline that is bonded to described crucible when generation are bonding to prevent monocrystalline based on the detected result Be Controlled heating of weighting unit.
8. the device of manufacturing single crystal rod according to claim 1 is characterized in that, further comprises:
Second heat preservation component, described second heat preservation component are arranged between described primary heater and the described main body;
The 3rd heat preservation component, described the 3rd heat preservation component is located between described crucible bottom and the described main body.
9. the device of manufacturing single crystal rod according to claim 8 is characterized in that, described second heat preservation component is heat reflection screen and/or thermal insulation layer, and
Described the 3rd heat preservation component is heat reflection screen and/or thermal insulation layer.
10. according to the device of claim 2 or 9 described manufacturing single crystal rods, it is characterized in that described heat reflection screen is formed by tungsten, molybdenum, miramint or graphite, described thermal insulation layer is formed by heat preservation carbon felt.
11. the device of manufacturing single crystal rod according to claim 1 is characterized in that, described heat-eliminating medium is water or helium.
12. the device of manufacturing single crystal rod according to claim 1 is characterized in that, described primary heater is formed by tungsten, miramint or graphite.
13. the device of manufacturing single crystal rod according to claim 1 is characterized in that, described single crystal rod is the sapphire crystal ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010532816.0A CN101967675B (en) | 2010-11-01 | 2010-11-01 | Device for manufacturing single crystal ingots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010532816.0A CN101967675B (en) | 2010-11-01 | 2010-11-01 | Device for manufacturing single crystal ingots |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101967675A true CN101967675A (en) | 2011-02-09 |
| CN101967675B CN101967675B (en) | 2014-05-07 |
Family
ID=43546893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010532816.0A Expired - Fee Related CN101967675B (en) | 2010-11-01 | 2010-11-01 | Device for manufacturing single crystal ingots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101967675B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168920A (en) * | 2011-04-15 | 2011-08-31 | 运城恒磁科技有限公司 | Crucible cooling device in vacuum induction melting furnace |
| CN102268731A (en) * | 2011-07-12 | 2011-12-07 | 协鑫光电科技（张家港）有限公司 | Temperature field system for crystal growth |
| CN102560655A (en) * | 2012-02-29 | 2012-07-11 | 郭宏鹤 | Sapphire crystal growing furnace |
| CN103121104A (en) * | 2011-11-21 | 2013-05-29 | 高殿斌 | Production method used for vacuum crystallization furnace heat preservation assembly materials |
| CN104451879A (en) * | 2014-11-24 | 2015-03-25 | 河南晶格光电科技有限公司 | Sapphire ingot production process |
| CN106835278A (en) * | 2017-01-13 | 2017-06-13 | 许昌天戈硅业科技有限公司 | A kind of crystal growth furnace heater and sapphire crystal growing furnace |
| CN106868594A (en) * | 2017-01-13 | 2017-06-20 | 许昌天戈硅业科技有限公司 | A kind of low energy consumption sapphire crystal growing furnace |
| CN109695055A (en) * | 2019-03-11 | 2019-04-30 | 苏州新美光纳米科技有限公司 | Long crystal furnace and crystal system |
| CN113699583A (en) * | 2021-09-28 | 2021-11-26 | 秦皇岛本征晶体科技有限公司 | Crystal growth furnace based on power reduction method and crystal growth method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485467A (en) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | Temperature gradient method growth device for large-area crystal and method for growing crystal by using same |
| CN1986905A (en) * | 2005-12-21 | 2007-06-27 | 北京有色金属研究总院 | Crystal growth device and method |
| CN101305116A (en) * | 2005-08-25 | 2008-11-12 | 晶体系统公司 | System and method for crystal growing |
| WO2009100694A1 (en) * | 2008-02-14 | 2009-08-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for preparing crystalline bodies by directional solidification |
| WO2010005705A1 (en) * | 2008-06-16 | 2010-01-14 | Gt Solar Incorporated | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| CN101760781A (en) * | 2009-09-25 | 2010-06-30 | 上海元亮光电科技有限公司 | Multifunctional crystal growth system of modular design |
| CN101805922A (en) * | 2010-04-27 | 2010-08-18 | 王敬 | Heat shielding and ingot furnace with same |
| CN201835006U (en) * | 2010-11-01 | 2011-05-18 | 王楚雯 | Device for manufacturing single crystal ingot |
-
2010
- 2010-11-01 CN CN201010532816.0A patent/CN101967675B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485467A (en) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | Temperature gradient method growth device for large-area crystal and method for growing crystal by using same |
| CN101305116A (en) * | 2005-08-25 | 2008-11-12 | 晶体系统公司 | System and method for crystal growing |
| CN1986905A (en) * | 2005-12-21 | 2007-06-27 | 北京有色金属研究总院 | Crystal growth device and method |
| WO2009100694A1 (en) * | 2008-02-14 | 2009-08-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for preparing crystalline bodies by directional solidification |
| WO2010005705A1 (en) * | 2008-06-16 | 2010-01-14 | Gt Solar Incorporated | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| CN101760781A (en) * | 2009-09-25 | 2010-06-30 | 上海元亮光电科技有限公司 | Multifunctional crystal growth system of modular design |
| CN101805922A (en) * | 2010-04-27 | 2010-08-18 | 王敬 | Heat shielding and ingot furnace with same |
| CN201835006U (en) * | 2010-11-01 | 2011-05-18 | 王楚雯 | Device for manufacturing single crystal ingot |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168920A (en) * | 2011-04-15 | 2011-08-31 | 运城恒磁科技有限公司 | Crucible cooling device in vacuum induction melting furnace |
| CN102168920B (en) * | 2011-04-15 | 2012-09-26 | 中磁科技股份有限公司 | Crucible cooling device in vacuum induction melting furnace |
| CN102268731A (en) * | 2011-07-12 | 2011-12-07 | 协鑫光电科技（张家港）有限公司 | Temperature field system for crystal growth |
| CN103121104A (en) * | 2011-11-21 | 2013-05-29 | 高殿斌 | Production method used for vacuum crystallization furnace heat preservation assembly materials |
| CN102560655A (en) * | 2012-02-29 | 2012-07-11 | 郭宏鹤 | Sapphire crystal growing furnace |
| CN104451879A (en) * | 2014-11-24 | 2015-03-25 | 河南晶格光电科技有限公司 | Sapphire ingot production process |
| CN106835278A (en) * | 2017-01-13 | 2017-06-13 | 许昌天戈硅业科技有限公司 | A kind of crystal growth furnace heater and sapphire crystal growing furnace |
| CN106868594A (en) * | 2017-01-13 | 2017-06-20 | 许昌天戈硅业科技有限公司 | A kind of low energy consumption sapphire crystal growing furnace |
| CN109695055A (en) * | 2019-03-11 | 2019-04-30 | 苏州新美光纳米科技有限公司 | Long crystal furnace and crystal system |
| CN113699583A (en) * | 2021-09-28 | 2021-11-26 | 秦皇岛本征晶体科技有限公司 | Crystal growth furnace based on power reduction method and crystal growth method |
| CN113699583B (en) * | 2021-09-28 | 2023-11-03 | 秦皇岛市和易科技有限公司 | Crystal growth method based on power reduction method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101967675B (en) | 2014-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101967675B (en) | Device for manufacturing single crystal ingots | |
| CN102051674B (en) | Monocrystal ingot manufacturing device | |
| CN202030860U (en) | Single crystal ingot manufacturing device | |
| CN101962800B (en) | Device for producing single crystal ingot by directional solidification method | |
| KR102049710B1 (en) | METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND PRODUCTION DEVICE | |
| CN105442037A (en) | High-speed single crystal growth device | |
| TWI541394B (en) | Method of fabricating crystalline silicon ingot | |
| CN101370969A (en) | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics | |
| CN101786156A (en) | Cooling method used for directional solidification and cooling device therefor | |
| CN102242392B (en) | Method for producing quasi-single crystal silicon with casting method and stabilizing crystal seed at furnace bottom after melting in ingot furnace | |
| CN102732947B (en) | Ingot thermal field for growing pure quasi-monocrystalline | |
| US20100140558A1 (en) | Apparatus and Method of Use for a Top-Down Directional Solidification System | |
| CN201817570U (en) | Device for manufacturing single crystal ingots through directional solidification method | |
| CN201835006U (en) | Device for manufacturing single crystal ingot | |
| CN102330144A (en) | Preparation method and equipment of finished product large area seed crystal and rectangle large area seed crystal | |
| CN100570018C (en) | Process for producing crystal and device | |
| CN103890240A (en) | System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source | |
| CN205295534U (en) | High -speed growth of single crystal device | |
| CN104862778A (en) | Preparation method of polycrystalline silicon ingot, polycrystalline silicon ingot and polycrystalline silicon wafer | |
| CN109537045B (en) | Heat exchanger for silicon ingot growth, growth furnace for silicon ingot and method for preparing silicon ingot | |
| CN202246974U (en) | Polysilicon thermal field with local cooling device | |
| CN102071455A (en) | Water cooling device for directional solidification of polycrystalline silicon | |
| KR101511826B1 (en) | Process for production multicrystalline silicon ingots by induction method | |
| CN111379016B (en) | Silicon single crystal growth method | |
| CN206562480U (en) | One kind radiating sapphire long crystal furnace of many sizes of homoepitaxial |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140507 Termination date: 20151101 |
|
| EXPY | Termination of patent right or utility model |