CN1983646A - Production of monocrystalline silicon solar battery suede - Google Patents
Production of monocrystalline silicon solar battery suede Download PDFInfo
- Publication number
- CN1983646A CN1983646A CNA2005101114551A CN200510111455A CN1983646A CN 1983646 A CN1983646 A CN 1983646A CN A2005101114551 A CNA2005101114551 A CN A2005101114551A CN 200510111455 A CN200510111455 A CN 200510111455A CN 1983646 A CN1983646 A CN 1983646A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- solar battery
- silicon solar
- matte
- battery suede
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention is concerned with the technology for preparation of monocrystalline silicon solar cell fabric, it is: puts the monocrystalline silicon into the NaOH liquor that the consistency is 0.5-2%and the temperature is 60-70 centigrade for processing with 25 - 40 minute, and processes ultrasonic vibration with the range of 170-400KHz during the disposal processing. The invention can wipe off the bubble of the silicon surface, not damage the surface.
Description
Technical field
The present invention relates to a kind of technology for preparing monocrystalline silicon solar battery suede.
Background technology
Solar cell is a kind of semiconductor device, and it can be directly is electric energy with the transform light energy of the sun.Owing to need not water, oil, vapour, fuel during its work, as long as the characteristics that have light just can generate electricity can be rated as cleaning in the present age, non-pollution of renewable energy, and installation and maintenance are simple, and long service life can realize unattended operation, extremely people's favor is the outstanding person of new forms of energy.In recent years, solar energy be applied in the whole world more and more widely, particularly in the communications field, solar power supply system just progressively replaces some traditional power-supply devices, obtains more and more general application.
When making solar cell, need carry out chemical treatment earlier, utilize solution to make (100) direction monocrystalline silicon surface form a positive tetrahedron matte as pyramid to the silicon face anisotropic etch.Because the existence of matte, the reflectivity of body surface will reduce greatly, increases the absorption of light.
Solar light irradiation generally has reverberation more than 40% at monocrystalline silicon surface, improve photoelectric conversion efficiency, must increase light by monocrystalline silicon surface uptake, makes reflectivity reduce to minimum.Chinese patent CN1507075A discloses a kind of " surperficial texture of monocrystaline silicon solar cell and preparation method thereof " on 06 23rd, 2004, and solar battery surface utilizes N
aOH solution and aqueous isopropanol carry out anisotropic etch, make pyramid figure (positive tetrahedron), increase the sunlight absorbing surface, through repeatedly reflection, increase monocrystalline silicon surface and absorb.Most of N that uses in the prior art
aOH solution and alcoholic solution carry out anisotropic etch to monocrystalline silicon.
Organic solution (alcohol or isopropyl alcohol) generates, drives away attached to the bubble hydrogen of monocrystalline silicon sheet surface when mainly effect is with NaOH and Si reaction when the preparation monocrystalline silicon solar battery suede.At home and abroad generally adopt though adopt alcohol or isopropyl alcohol to prepare matte,, can prepare quality matte preferably as long as process conditions are grasped well.But the use of organic solution has increased production cost, and subsequent process also needs to handle the sewage of organic solution.The sewage disposal flow process of organic solution is complicated, and cost is also higher.
Summary of the invention
Need adopt the deficiency of organic solution, the present invention to propose a kind ofly to need not to use organic solution to prepare the method for monocrystalline silicon solar battery suede at prior art at the preparation monocrystalline silicon solar battery suede.
The preparation method of a kind of monocrystalline silicon solar battery suede that the present invention proposes, be characterized in that it is that 0.5-2%, temperature are to handle 25-40 minute in 60 ℃-70 ℃ the NaOH solution that monocrystalline silicon is inserted concentration, passes to the ultrasonic vibration of 170-400KHZ frequency range in the processing procedure.
If acoustic energy is enough strong, liquid was open in the ripple expansion stage, produced bubble thus, and at the compression stage of ripple, these bubbles instantaneous explosion or implosion in liquid produce a kind of very effective impulsive force.This process is referred to as cavitation.Ultrasonic cleaning is exactly the effect that has utilized this cavitation.NaOH produces many hydrogen gas bubbles and adheres to silicon face at silicon face when monocrystalline silicon surface is made matte, if in time these bubbles are not driven away, silicon face can not fully react with NaOH solution in this section, cause the blank spot that forms matte in this zone, Here it is " raindrop " said usually.It is lower that " raindrop " increases explanation matte quality, and the light reflectivity of weighing the matte quality also just increases.
Technique scheme of the present invention is exactly to utilize ultrasonic cavitation, is used for " matte " technology that solar cell changes surperficial texture.NaOH right<when 111〉direction monocrystalline silicon surfaces are made matte, " exhaust bubble " effect without organic solution alcohol or isopropyl alcohol, use ultrasonic vibration instead, the bubble that will be attached to silicon face by its cavitation is in time got rid of, and forms " pyramid " matte uniformly at silicon face.
The selection of supersonic frequency is also very important in the technique scheme of the present invention, and frequency is lower, will produce noise as 20-40KHZ, and unfavorable workers'health the more important thing is that " the strong cleaning " of low frequency can produce certain damage to surface of the work.Through overtesting, the present invention has selected the piezoelectricity converter for use, the 170-400KHZ frequency range, and test shows that the ultrasonic vibration of this frequency range can in time remove the silicon face bubble, injured surface not is fit to the making of " pyramidion " matte again.
With respect to prior art, the present invention passes to the ultrasonic vibration of 170-400KHZ frequency range by selecting the piezoelectricity converter for use in the matte groove, in time remove the silicon face bubble, and injured surface not forms " pyramidion " matte uniformly at monocrystalline silicon surface again; In addition, the present invention does not use organic solution, and subsequent process need not sewage is done special harmless treatment, has reduced cost.
Embodiment
Below in conjunction with embodiment the present invention is further described.
Embodiment 1
1, in the matte groove, is furnished with the NaOH solution insulation of 1.5% solution at 65 ℃;
2, with in<100〉direction the monocrystalline silicon piece immersion solution;
3, the piezoelectricity converter in the starting groove, frequency 170KHZ;
4, by corrosion in 30 minutes, obtain small and dense pyramid matte.
Embodiment 2
1, in the matte groove, is furnished with the NaOH solution insulation of 1% solution at 70 ℃;
2, with in<100〉direction the monocrystalline silicon piece immersion solution;
3, the piezoelectricity converter in the starting groove, frequency 400KHZ;
4, by corrosion in 35 minutes, obtain small and dense pyramid matte.
Claims (2)
1, a kind of preparation method of monocrystalline silicon solar battery suede is characterized in that it is that 0.5-2%, temperature are to handle 25-40 minute in 60 ℃-70 ℃ the NaOH solution that monocrystalline silicon is inserted concentration, passes to the ultrasonic vibration of 170-400KHZ frequency range in the processing procedure.
2, the preparation method of monocrystalline silicon solar battery suede according to claim 1 is characterized in that selecting for use the piezoelectricity converter to produce the ultrasonic vibration of 170-400KHZ frequency range.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2005101114551A CN1983646A (en) | 2005-12-13 | 2005-12-13 | Production of monocrystalline silicon solar battery suede |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2005101114551A CN1983646A (en) | 2005-12-13 | 2005-12-13 | Production of monocrystalline silicon solar battery suede |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1983646A true CN1983646A (en) | 2007-06-20 |
Family
ID=38166008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005101114551A Pending CN1983646A (en) | 2005-12-13 | 2005-12-13 | Production of monocrystalline silicon solar battery suede |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1983646A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299205A (en) * | 2011-08-29 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for texturing surface of crystal silicon solar cell |
CN109930153A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid and etching device |
CN112708938A (en) * | 2020-12-22 | 2021-04-27 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Monocrystalline silicon piece texturing agent and texturing method |
-
2005
- 2005-12-13 CN CNA2005101114551A patent/CN1983646A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299205A (en) * | 2011-08-29 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for texturing surface of crystal silicon solar cell |
CN109930153A (en) * | 2019-04-24 | 2019-06-25 | 深圳市华星光电技术有限公司 | Etching liquid and etching device |
CN112708938A (en) * | 2020-12-22 | 2021-04-27 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Monocrystalline silicon piece texturing agent and texturing method |
CN112708938B (en) * | 2020-12-22 | 2022-03-22 | 江苏启威星装备科技有限公司 | Monocrystalline silicon piece texturing agent and texturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107706087B (en) | Silicon wafer cleaning method | |
CN102593268B (en) | Method for carrying out cleaning and texture-surface-making on heterojunction solar cells by using texturing smoothing and rounding technique | |
CN101431124A (en) | Texture etching method for single crystalline silicon solar cell | |
CN109585583A (en) | A kind of process for etching for solar battery sheet production | |
CN102005504A (en) | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency | |
CN102108557B (en) | Method for preparing monocrystalline silicon suede | |
CN107675263A (en) | The optimization method of monocrystalline silicon pyramid structure matte | |
CN102064232A (en) | Process applied to single-surface corroded p-n junction or suede structure of crystalline silicon solar cell | |
CN108206225B (en) | A kind of fine-hair maring using monocrystalline silicon slice agent composition and its application | |
CN109261194A (en) | A kind of large area Z-type hetero-junctions nitride porous carbon/cadmium selenide composite photo-catalyst and preparation method thereof | |
CN1983646A (en) | Production of monocrystalline silicon solar battery suede | |
CN112080774A (en) | Surface treatment method for aluminum alloy rotor flange shell of offshore wind plant | |
CN114109929B (en) | Integrated hydraulic conversion oil cylinder applied to wave power generation device and using method thereof | |
CN115975499B (en) | Preparation method of photo-thermal coating composite material for solar energy interface evaporation | |
CN105226132A (en) | A kind of solar energy rainbow plate is done over again technique | |
CN108411364A (en) | A kind of process for etching of antiradar reflectivity monocrystalline silicon | |
CN103184523A (en) | Monocrystalline silicon texturing agent and preparation method of texture monocrystalline silicon | |
CN102431969A (en) | Hydrogen energy power generation system based on hydrogen gas purification component and vacuum pumping technology | |
CN102489468B (en) | Method for cleaning silicon nitride on surface layer of graphite base plate | |
CN105428432A (en) | Preparation method for porous light-trapping structure on surface of silicon solar cell | |
CN102162098B (en) | Preparation method of silicon film/titanium dioxide nanotube array composite structure | |
CN109378363A (en) | A method of it prepares with positive pyramid/inverted pyramid composite construction silicon wafer | |
CN110484972A (en) | A kind of process for etching of solar monocrystalline silicon | |
CN108682615A (en) | Cleaning after a kind of black silicon of dry method making herbs into wool | |
CN108281508A (en) | The preparation method of low surface reflectivity Buddha's warrior attendant wire cutting polysilicon chip matte |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20070620 |