CN108682615A - Cleaning after a kind of black silicon of dry method making herbs into wool - Google Patents
Cleaning after a kind of black silicon of dry method making herbs into wool Download PDFInfo
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- CN108682615A CN108682615A CN201810420509.XA CN201810420509A CN108682615A CN 108682615 A CN108682615 A CN 108682615A CN 201810420509 A CN201810420509 A CN 201810420509A CN 108682615 A CN108682615 A CN 108682615A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 65
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 36
- 235000008216 herbs Nutrition 0.000 title claims abstract description 29
- 210000002268 wool Anatomy 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- 239000008367 deionised water Substances 0.000 claims abstract description 30
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000006227 byproduct Substances 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims abstract description 5
- 239000000047 product Substances 0.000 claims abstract 2
- 238000002310 reflectometry Methods 0.000 claims description 26
- 239000000654 additive Substances 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- 230000035484 reaction time Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000003513 alkali Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010865 sewage Substances 0.000 abstract description 2
- 239000002699 waste material Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 210000000988 bone and bone Anatomy 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses cleanings after a kind of black silicon of dry method making herbs into wool, including：The byproduct of reaction of silicon chip surface is removed using HF, then obtains black silicon finished product using dewatered drying after deionized water, KOH solution, deionized water, the mixed solution of HF/HCL, deionized water cleaning silicon chip successively.The present invention uses the HNO containing N element due to avoiding3And BOE and greatly reduce sewage disposal difficulty and waste discharge amount；After dry method making herbs into wool using alkali clean microcosmic tip tissue reduce, can bring it is a degree of put forward effect, the process time can greatly reduce and greatly improve production capacity.
Description
Technical field
It is the present invention relates to silicon chip of solar cell production technical field, more particularly to a kind of for silicon chip of solar cell
Cleaning after dry method process for etching more particularly to the black silicon of dry method making herbs into wool.
Background technology
The finiteness of conventional energy resource resource and the increase of environmental pressure, make in the world many countries strengthened again to new energy
The support in source and renewable energy technologies development.New energy is power is most determined in 21st century development of world economy five big
One of technical field.Solar energy is a kind of clean, efficient and never-exhausted new energy.In practice, national governments all will too
Important content of the positive energy utilization of resources as National Sustainable Development Strategies.And photovoltaic generation has safe and reliable, noiseless, nothing
Pollution restricts less, the advantages that failure rate is low, easy maintenance, and in China western part, length and breadth of land severe cold, landform are various and sparsely populated shows
Under reality condition, there is very unique effect.And solar cell is the core devices of photovoltaic power generation equipment.
Solar cell manufacture is developed rapidly in recent years, and being generated electricity using crystal silicon solar has been had in the whole world
The power station installed capacity of 250GW.In order to make solar power generation have more commercial advantage, industry is constantly being sought technological innovation, is being made
Photoelectric conversion efficiency higher, production cost is lower, environmental impact minimization.
Dry method making herbs into wool is just to start a kind of technology of industrialization recently, the method that it utilizes chemical etching in vacuum, original
Smooth silicon chip surface makes incident light be reduced to 10% hereinafter, comparing from 30% in the reflectivity of silicon face in nanoscale rough
In traditional wet method（In the solution）Making herbs into wool, reflectivity can only reach 20% or so, and avoid using strong acid or highly basic system
Suede not only reduces pollution environment, but also reduces cost.Since reflectivity reduces, surface color blacks, so being commonly called as " black
Silicon ".
After dry method making herbs into wool, it is to use BOE that need to remove the micro-damage layer of except black silicon face, conventional processing mode（BOE be HF with
NH4The buffered etch liquid that F is mixed according to different proportion）/H2O2Mixed liquor.But conventional sour cleaning and texturing technique exists
It is following insufficient：
1. the cost of acid is higher, and acid belongs in hazardous chemical, especially BOE mixed solutions and contains HF, to human skin and
The harm such as bone is larger, is easy to cause to damage to equipment and worker；
2. due to HNO3And containing N element in BOE, discharge of wastewater is seriously polluted and wastewater treatment difficulty is larger, cost input
It is higher.
Invention content
In order to solve the above technical problems, the present invention provides cleaning after a kind of black silicon of dry method making herbs into wool, it to be used for dry method
The reflectivity obtained after making herbs into wool is the cleaning of the black silicon of 3.5%-6.5%, is included the following steps：
1）Use HF（The mixed solution of HF/HCL can also be used, the mass fraction of HCL is 1wt%-8wt%）Remove silicon chip surface
The mass fraction of some byproducts of reaction, HF is 1wt%-8wt%, room temperature lower reaction time 30-120s；
2）Use deionized water at normal temperature cleaning silicon chip 60-120s；
3）Use KOH（It is one or more hydrophobicity cleaning agents that additive, additive, which can be used, and the volume fraction of additive is
0.05%-1.0%）Expand the Micro porosity of silicon chip, the mass fraction of KOH is 0.05wt%-1.0wt%, and temperature is controlled in 15-30
DEG C, wash rear silicon chip surface reflectivity 9%-15%；
4）Use deionized water at normal temperature cleaning silicon chip 60-120s；
5）Mass fraction using mixed solution the cleaning silicon chip 60-180s, HF/HCL of HF/HCL is 3wt%-10wt%, room temperature
Cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 60-120s；
7）Silicon chip dewatered drying.
The present invention also provides a kind of black silicon chips, by clear after the black silicon of claim 1-3 any one of them dry method making herbs into wool
Technique is washed to obtain.
The present invention also provides a kind of solar cells, are prepared based on the black silicon chip described in claim 4.
Through the above technical solutions, the invention has the advantages that：
（1）The present invention is lower than acid using the cost of alkali, and uses the HNO containing N element due to avoiding3And BOE and it is very big
Sewage disposal difficulty and waste discharge amount are reduced, and alkali is smaller to harm such as human skin and bones；
（2）For current photovoltaic cell production technology, being promoted slightly for battery efficiency is all extremely difficult, and this hair
Black silicon is cleaned using alkali after bright RIE, which can make the microcosmic tip of black silicon organize to reduce so that battery passivation effect becomes
It is good, Uoc（U open circuit, open-circuit voltage）It is promoted, and then improves battery efficiency, according to data statistics, the rear cleaning
It can bring 0.05-0.1%'s to put forward effect, promotion works well；
（3）Black silicon uses alkali cleaning, process time that can greatly reduce after RIE, can be significantly in the case where not increasing equipment
Improve production capacity.
Specific implementation mode
The technical scheme in the embodiments of the invention will be clearly and completely described below.
Embodiment 1：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 3.5% it is clear
It washes, includes the following steps：
1）The byproduct of reaction of silicon chip surface is removed using HF, the mass fraction of HF is 1wt%, room temperature lower reaction time 120s；
2）Use deionized water at normal temperature cleaning silicon chip 60s；
3）Expand the Micro porosity of silicon chip using KOH, the mass fraction of KOH is 0.05wt%, and temperature is controlled at 30 DEG C, washes rear silicon
Piece surface reflectivity 10%；
4）Use deionized water at normal temperature cleaning silicon chip 60s；
5）Mass fraction using mixed solution the cleaning silicon chip 180s, HF/HCL of HF/HCL is 3wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 60s；
7）Silicon chip dewatered drying obtains the black silicon that surface reflectivity is 10%.
Embodiment 2：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 5.0% it is clear
It washes, includes the following steps：
1）Some byproducts of reaction of silicon chip surface are removed using HF, the mass fraction of HF is 5wt%, room temperature lower reaction time
90s；
2）Use deionized water at normal temperature cleaning silicon chip 90s；
3）Expand the Micro porosity of silicon chip using KOH, the mass fraction of KOH is 0.5wt%, and temperature is controlled at 20 DEG C, washes rear silicon chip
Surface reflectivity 12%；
4）Use deionized water at normal temperature cleaning silicon chip 90s；
5）Mass fraction using mixed solution the cleaning silicon chip 120s, HF/HCL of HF/HCL is 5wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 90s；
7）Silicon chip dewatered drying obtains the black silicon that surface reflectivity is 12%.
Embodiment 3：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 6.5% it is clear
It washes, includes the following steps：
1）Some byproducts of reaction of silicon chip surface are removed using HF, the mass fraction of HF is 8wt%, room temperature lower reaction time
30s；
2）Use deionized water at normal temperature cleaning silicon chip 120s；
3）Expand the Micro porosity of silicon chip using KOH, the mass fraction of KOH is 1.0wt%, and temperature is controlled at 15 DEG C, washes rear silicon chip
Surface reflectivity 14%；
4）Use deionized water at normal temperature cleaning silicon chip 120s；
5）Mass fraction using mixed solution the cleaning silicon chip 60s, HF/HCL of HF/HCL is 10wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 120s；
7）Silicon chip dewatered drying obtains the black silicon that surface reflectivity is 14%.
Embodiment 4：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 4.3% it is clear
It washes, includes the following steps：
1）Some byproducts of reaction of silicon chip surface are removed using the mixed solution of HF/HCL, the mass fraction of HF is 5wt%, HCL
Mass fraction be 5wt%, room temperature lower reaction time 90s；
2）Use deionized water at normal temperature cleaning silicon chip 90s；
3）Using KOH and use hydrophobicity cleaning agent as additive（The volume fraction of additive is 1.0%）Expand the micro- of silicon chip
The mass fraction in view hole hole, KOH is 0.5wt%, and temperature is controlled at 20 DEG C, washes rear silicon chip surface reflectivity 11%；
4）Use deionized water at normal temperature cleaning silicon chip 90s；
5）Mass fraction using mixed solution the cleaning silicon chip 120s, HF/HCL of HF/HCL is 5wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 90s；
7）Silicon chip dewatered drying obtains the black silicon of surface reflectivity 11%.
Embodiment 5：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 4.8% it is clear
It washes, includes the following steps：
1）Some byproducts of reaction of silicon chip surface are removed using HF, the mass fraction of HF is 5wt%, room temperature lower reaction time
90s；
2）Use deionized water at normal temperature cleaning silicon chip 90s；
3）Using KOH and use hydrophobicity cleaning agent as additive（The volume fraction of additive is 0.5%）Expand the micro- of silicon chip
The mass fraction in view hole hole, KOH is 0.5wt%, and temperature is controlled at 20 DEG C, washes rear silicon chip surface reflectivity 12%；
4）Use deionized water at normal temperature cleaning silicon chip 90s；
5）Mass fraction using mixed solution the cleaning silicon chip 120s, HF/HCL of HF/HCL is 5wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 90s；
7）Silicon chip dewatered drying obtains the black silicon that surface reflectivity is 12%.
Embodiment 6：
Cleaning after a kind of black silicon of dry method making herbs into wool, the black silicon that the reflectivity for being used to obtain after dry method making herbs into wool is 5.3% it is clear
It washes, includes the following steps：
1）Some byproducts of reaction of silicon chip surface are removed using the mixed solution of HF/HCL, the mass fraction of HF is 5wt%, HCL
Mass fraction be 1wt%, room temperature lower reaction time 90s；
2）Use deionized water at normal temperature cleaning silicon chip 90s；
3）Using KOH and use hydrophobicity cleaning agent as additive（The volume fraction of additive is 0.05%）Expand silicon chip
The mass fraction of Micro porosity, KOH is 0.5wt%, and temperature is controlled at 20 DEG C, washes rear silicon chip surface reflectivity 13%；
4）Use deionized water at normal temperature cleaning silicon chip 90s；
5）Mass fraction using mixed solution the cleaning silicon chip 120s, HF/HCL of HF/HCL is 5wt%, room temperature cleaning；
6）Use deionized water at normal temperature cleaning silicon chip 90s；
7）Silicon chip dewatered drying obtains the black silicon that surface reflectivity is 13%.
Embodiment 7：
The present invention also provides a kind of black silicon chips, by cleaning after the black silicon of embodiment 1-6 any one of them dry method making herbs into wool
It obtains.
Embodiment 8：
The present invention also provides a kind of solar cell, the black silicon chip prepared based on embodiment 7 is prepared.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
A variety of modifications of above-described embodiment will be apparent to those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (5)
1. cleaning after a kind of black silicon of dry method making herbs into wool, the reflectivity for being used to obtain after dry method making herbs into wool is the black of 3.5%-6.5%
The cleaning of silicon, which is characterized in that include the following steps：
1）The byproduct of reaction of silicon chip surface is removed using HF；
2）Use deionized water at normal temperature cleaning silicon chip；
3）The Micro porosity for expanding silicon chip using KOH, it is 9%-15% to wash rear silicon chip surface reflectivity；
4）Use deionized water at normal temperature cleaning silicon chip；
5）The mixed solution cleaning silicon chip of HF/HCL is used under room temperature；
6）Use deionized water at normal temperature cleaning silicon chip；
7）Silicon chip dewatered drying obtains black silicon finished product.
2. cleaning after a kind of black silicon of dry method making herbs into wool according to claim 1, which is characterized in that
1）The mass fraction of HF is 1wt%-8wt%, and room temperature lower reaction time 30-120s is to remove the reaction by-product of silicon chip surface
Object；
2）Use deionized water at normal temperature cleaning silicon chip 60-120s；
3）The mass fraction of KOH is 0.05wt%-1.0wt%, and temperature control, to expand the Micro porosity of silicon chip, is washed at 15-30 DEG C
Silicon chip surface reflectivity 9%-15% afterwards；
4）Use deionized water at normal temperature cleaning silicon chip 60-120s；
5）In HF/HCL mixed solutions, the mass fraction of HF/HCL is 3wt%-10wt%, cleaning silicon chip 60-180s under room temperature；
6）Use deionized water at normal temperature cleaning silicon chip 60-120s；
7）Silicon chip dewatered drying.
3. cleaning after a kind of black silicon of dry method making herbs into wool according to claim 2, which is characterized in that
Step 1）In, also there is HCL, the mass fraction of HCL is 1wt%-8wt% in HF solution；Step 3）In, in KOH solution also
With additive, the volume fraction of additive is 0.05%-1.0%.
4. a kind of black silicon chip, which is characterized in that obtained by cleaning after the black silicon of claim 1-3 any one of them dry method making herbs into wool
It arrives.
5. a kind of solar cell, which is characterized in that be prepared based on the black silicon chip described in claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810420509.XA CN108682615A (en) | 2018-05-04 | 2018-05-04 | Cleaning after a kind of black silicon of dry method making herbs into wool |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810420509.XA CN108682615A (en) | 2018-05-04 | 2018-05-04 | Cleaning after a kind of black silicon of dry method making herbs into wool |
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| CN108682615A true CN108682615A (en) | 2018-10-19 |
Family
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| CN201810420509.XA Pending CN108682615A (en) | 2018-05-04 | 2018-05-04 | Cleaning after a kind of black silicon of dry method making herbs into wool |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659392A (en) * | 2018-12-05 | 2019-04-19 | 中国科学院长春光学精密机械与物理研究所 | Reduce the method and micro-structure silicon materials of golden half contact resistance on micro-structure silicon materials |
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|---|---|---|---|---|
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN106328736A (en) * | 2015-06-16 | 2017-01-11 | 镇江大全太阳能有限公司 | Anti-LID black silicon solar high-efficiency cell and production method thereof |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
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2018
- 2018-05-04 CN CN201810420509.XA patent/CN108682615A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328736A (en) * | 2015-06-16 | 2017-01-11 | 镇江大全太阳能有限公司 | Anti-LID black silicon solar high-efficiency cell and production method thereof |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
Non-Patent Citations (1)
| Title |
|---|
| TA-MING KUAN等: "《High Efficiency Large-Area Multi-Crystalline Silicon Solar Cells Using Reactive Ion Etching Technique》", 《2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109659392A (en) * | 2018-12-05 | 2019-04-19 | 中国科学院长春光学精密机械与物理研究所 | Reduce the method and micro-structure silicon materials of golden half contact resistance on micro-structure silicon materials |
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Application publication date: 20181019 |