CN1983572A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- CN1983572A CN1983572A CN 200610153136 CN200610153136A CN1983572A CN 1983572 A CN1983572 A CN 1983572A CN 200610153136 CN200610153136 CN 200610153136 CN 200610153136 A CN200610153136 A CN 200610153136A CN 1983572 A CN1983572 A CN 1983572A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Pressure Sensors (AREA)
Abstract
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.
Description
Technical field
The present invention relates to have the semiconductor device of semiconductor chips such as sound press sensor chip or pressure sensor chip.
The application based on December 6th, 2005 spy in Japanese publication be willing to 2005-351653 number and special be willing on December 27th, 2005-351654 number 1 the spy in Japanese publication be willing to 2005-376393 number and on October 31st, 2006 spy in Japanese publication be willing to advocate priority 2006-296013 number, and quote its content in this application.
Background technology
Semiconductor devices such as existing silicon microphone or pressure sensor, such as special public table 2004-537182 communique and the U.S. specially permit No. 6781231 record, the semiconductor chip that sound press sensor chip or pressure sensor chip are had moving part like that is installed in the surface of substrate.In this semiconductor device, form the hollow space that contains above-mentioned semiconductor chip at the surface-coated metal lid (lid) of the circuit substrate that is equipped with semiconductor chip.Cover at this and to be formed with the peristome that is used to be communicated with above-mentioned hollow space and space outerpace.This lid is bonded to the surface of substrate via the binding agent with conductivity etc. with the end of lid, is fixed on the circuit substrate thus.
But in above-mentioned existing semiconductor devices, owing to lid must be bonded and fixed on the circuit substrate when making this device, lid is with respect to the location difficulty of circuit substrate.
In addition, in this semiconductor device, make efficient, seek the reduction of the manufacturing cost of semiconductor device in order to improve it.
Summary of the invention
The present invention In view of the foregoing researches and develops, and its purpose is to provide a kind of semiconductor device that lid is carried out easily with respect to the location of substrate, and the employed lid of this semiconductor device.
In addition, another object of the present invention is to, the manufacturing efficient of seeking semiconductor device improves and reduction semiconductor device manufacturing cost.
In order to address the above problem, semiconductor device of the present invention comprises: the surface has the substrate of the blank part of hollow; The semiconductor chip of lift-launch on the blank part of described substrate; Lid, described lid have relative with described substrate and cover the roughly tabular top plate portion of described blank part and outstanding and be fastened at least one pair of side wall portion on the side of described substrate to described substrate from the periphery of described top plate portion.
In addition, the invention provides the manufacture method of semiconductor device, the semiconductor device of this manufacture method manufacturing has the semiconductor chip that carries on the one side of lid covered substrate thickness direction of conductivity via the blank part utilization of hollow, this manufacture method has following operation: substrate sheet material preparatory process, it is formed for it is divided into the section datum line of each described substrate on sheet material at substrate, and described substrate is with sheet material a plurality of described semiconductor chips of configuration side by side on the described one side of described thickness direction; The lid preparatory process, it forms a plurality of described lid that covers the described a plurality of semiconductor chips that dispose on the one side of described substrate with sheet material respectively; Overlap operation, it is fixed with described substrate described a plurality of lid respectively with the described one side side superimposed of sheet material, so that described a plurality of lid covers described a plurality of semiconductor chip respectively; Segmentation process, it is decided what is right and what is wrong out described substrate by described section datum line with sheet material, be partitioned into each described semiconductor device.
According to semiconductor device of the present invention, engage with the side of substrate by making pair of sidewalls portion, can easily make top plate portion with respect to substrate orientation.That is, lid is carried out easily with respect to the location of substrate.
In addition, in the manufacture method of semiconductor device of the present invention, formed otch at substrate in the sheet material preparatory process, so in segmentation process, only need curved substrate to produce shear stress, just the residual portion of break notches easily with sheet material or residual of otch.In addition, because in overlapping operation, a plurality of lids are overlapped an end face side that is fixed on substrate usefulness sheet material respectively, so when substrate is divided into each substrate with sheet material, can obtain each semiconductor device simultaneously.In segmentation process, need not be by cutting apart with the cutting of water cooling breaking portion, therefore even form peristome and the blank part that disposes semiconductor chip is communicated with the outside on each lid, above-mentioned water can not take place yet invade unfavorable condition in the blank part from this peristome.
Description of drawings
To be expression observe the stereogram of the state that the semiconductor device of first embodiment of the invention sees from the lid side to Fig. 1;
To be expression observe the stereogram of the state that the semiconductor device of Fig. 1 sees from the ceramic substrate side to Fig. 2;
Fig. 3 is the profile of the semiconductor device of presentation graphs 1;
Fig. 4 is the stereogram that the employed substrate of manufacture method of the semiconductor device of expression first embodiment of the invention is used sheet material;
Fig. 5 amplifies the stereogram of expression substrate shown in Figure 4 with the part of sheet material;
Fig. 6 is the stereogram of the employed lid of first manufacture method of the semiconductor device of expression first embodiment of the invention;
Fig. 7 is the sectional side view of first manufacture method of the semiconductor device of expression first embodiment of the invention;
Fig. 8 is the sectional side view of first manufacture method of the semiconductor device of expression first embodiment of the invention;
Fig. 9 is the sectional side view of the manufacture method of expression semiconductor device of the present invention;
Figure 10 is the sectional side view of segmentation process of the manufacture method of expression semiconductor device of the present invention;
Figure 11 is another routine profile of segmentation process of the manufacture method of expression semiconductor device of the present invention;
To be expression observe the stereogram of the state that the semiconductor device of second embodiment of the invention sees from the lid side to Figure 12;
To be expression observe the stereogram of the state that the semiconductor device of Figure 12 sees from the ceramic substrate side to Figure 13;
Figure 14 amplifies the stereogram of the employed substrate of semiconductor device of expression manufacturing Figure 12 with sheet material;
Figure 15 is the stereogram that the employed lid of semiconductor device of Figure 12 is made in expression;
Figure 16 is another routine stereogram that the employed lid of semiconductor device of Figure 12 is made in expression;
Figure 17 is the approximate three-dimensional map that the employed lid of second manufacture method of the semiconductor device of expression first embodiment of the invention is used sheet material;
Figure 18 is the sectional side view of second manufacture method of the semiconductor device of expression first embodiment of the invention;
Figure 19 A and 19B are amplification stereogram and the Zoom Side profile of expression lid shown in Figure 17 with sheet material;
Figure 20 is the profile of second manufacture method of the semiconductor device of expression first embodiment of the invention;
Figure 21 A, 21B, 21C amplify the stereogram of expression lid shown in Figure 17 with the variation of the bend of sheet material;
Figure 22 amplifies the stereogram of the employed lid of second manufacture method of the semiconductor device of representing second embodiment of the invention with sheet material;
Figure 23 is the sectional side view of an example of lid preparatory process of the manufacture method of expression semiconductor device of the present invention;
Figure 24 A and 24B are another routine sectional side views of lid preparatory process of the manufacture method of expression semiconductor device of the present invention;
Figure 25 is the sectional side view of the semiconductor device of expression third embodiment of the invention;
Figure 26 is the stereogram of the lid that uses when making the semiconductor device of Figure 25 of expression;
Figure 27 is the sectional side view of manufacture method of the semiconductor device of expression third embodiment of the invention;
Figure 28 is the sectional side view of manufacture method of the semiconductor device of expression third embodiment of the invention;
Figure 29 is the sectional side view of variation of the semiconductor device of expression third embodiment of the invention;
Figure 30 is the sectional side view of the semiconductor device of expression fourth embodiment of the invention.
Embodiment
Below, with reference to first embodiment of description of drawings semiconductor device of the present invention.
Shown in Fig. 1～3, the semiconductor device 1 of embodiment of the present invention have roughly form tabular ceramic substrate 3, at the stacked semiconductor chip 5 of surperficial 3a side and the lid 7 of ceramic substrate 3.
Be formed with a plurality of pad electrodes 17 that are used for semiconductor chip 5 electrical connections at the surperficial 15a of end difference 15.Be formed with a plurality of external connection terminals 19 at the back side of ceramic substrate 3 3c.These pad electrodes 17 and external connection terminals 19 are electrically connected by the wiring part 21 that is formed at ceramic substrate 3 inside.
Above-mentioned pad electrode 17, external connection terminals 19, wiring part 21, shield member 23 and connection pads 25 utilize silver powder, copper powders may or tungsten powder to form for the cream (having mixed adhesives such as allyl resin in silver powder, copper powders may or tungsten powder) of main component.Pad electrode 17, external connection terminals 19 and connection pads 25 are at nickel (Ni) and the gold (Au) of thickness 0.3 micron and form of plating thickness more than 1 micron for example on the above-mentioned material.These pad electrodes 17, external connection terminals 19 and wiring part 21, shield member 23 and connection pads 25 electric insulations.
As shown in Figure 3, this ceramic substrate 3 insulating barrier that the sintered ceramic tellite is obtained 27,28,29,30 is stacked a plurality of and form.On each insulating barrier 27,28,29,30, form described pad electrode 17, external connection terminals 19, wiring part 21, shield member 23 and connection pads 25.That is recess 11 that forms on the ceramic substrate 3 or end difference 15, hole 13 punching press and forming on ceramic printed-circuit board.
Mode with coverage hole 13 is bonded and fixed on the bottom surface 11a of recess 11 this semiconductor chip 5 via the bonding cream B1 of insulating material formation.Semiconductor chip 5 is electrically connected with pad electrode 17 by electric wire 31.By being formed on the recess 11 on the ceramic substrate 3, between the hole 13 of the vibrating membrane 5a of semiconductor chip 5 and ceramic substrate 3, guarantee the blank part S1 of the size that vibrating membrane 5a fully vibrates.
As shown in Figure 6, top plate portion 35 is formed with the protuberance 39 to the outstanding roughly ring-type of the surperficial 3a of ceramic substrate 3 in the position relative with the periphery of the recess 11 of ceramic substrate 3.This protuberance 39 makes top plate portion 35 distortion and forms, and therefore improves the rigidity of lid 7 and prevents the bending of top plate portion 35.
This protuberance 39 under the state of the surperficial 3a that top plate portion 35 is disposed at ceramic substrate 3, electrically contacts with connection pads 25.Specifically, bonding is fixing mutually via the conductive paste B2 with conductivity for protuberance 39 and connection pads 25, and thus, lid 7 is fixed on the ceramic substrate 3.In addition, lid 7 and shield member 23 surround semiconductor chip 5, and the shield member 23 of ceramic substrate 3 is electrically connected with lid 7.
On top plate portion 35, be formed with the peristome 35a that connects its thickness direction.By this peristome 35a, the hollow space S2 that comprises semiconductor chip 5 is communicated with the space outerpace in semiconductor device 1 outside.
The side wall portion 37 of lid 7 is outstanding from four limits of top plate portion 35 respectively.Be arranged at top plate portion 35 relative both sides pair of sidewalls portion 37 toward each other.These a plurality of side wall portions 37 engage with a plurality of otch 9 on the side 3b that is formed on ceramic substrate 3 respectively.That is the side 9a of each otch 9 of side wall portion 37 crimping.
Below, as above first manufacture method of the semiconductor device 1 of the first embodiment of the invention of formation is described.
In this manufacture method, at first shown in Fig. 4,5,7, preparation can be disposed the substrate sheet material 41 (substrate sheet material preparatory process) of a plurality of semiconductor chips 5.This substrate connects a plurality of ceramic substrates 3 in length and breadth with sheet material 41.
This substrate with sheet material preparatory process in, at first, prepare four tellites, the ceramic paste that this tellite will contain ceramic powders forms sheet and constitutes.These tellites constitute each insulating barrier 27,28,29,30 of ceramic substrate 3.
Then, implementing punch process on each tellite with the window-like orifice of the recess 11, hole 13 and the end difference 15 that are formed for forming each ceramic substrate 3 and forming the through hole 43,45 that uses in wiring part 21 or the shield member 23.Then, by the grid printing, on the surface of each tellite or suitably to print with silver powder, copper powders may or tungsten powder be the cream of main component at the back side.And then, above-mentioned cream is filled in the through hole 43,45 of each tellite, form pad electrode 17, external connection terminals 19, wiring part 21, shield member 23 and connection pads 25.
Then, shown in Fig. 4 and 5, stacked these four tellites constitute the folded body 47 of green sheet layers.The surface and the back side at the folded body 47 of this green sheet layers form grooving 49a, 49b.This grooving 49a, 49b mark off each ceramic substrate 3, form clathrate.And then, the patchhole 51 that on the thickness direction that is being formed on the folded body 47 of green sheet layers on the part of grooving 49a, 49b between each ceramic substrate 3 adjacent one another are, connects.The substantial middle of this patchhole 51 between cross one another each crosspoint of grooving 49a, 49b that clathrate forms forms.In addition, these groovings 49a, 49b and patchhole 51 can form simultaneously, also can be individually formed respectively.
Then, with the folded body 51 of this green sheet layers of sintering more than 1000 ℃,, finish the manufacturing of substrate with sheet material 41 by on pad electrode 17, external connection terminals 19 and connection pads 25, imposing nickel plating and gold-plated.
In addition, illustrate substrate and be formed on substrate with the surperficial 3a of sheet material 41 and the example on the 3c of the back side, but be not limited thereto, also can only be formed on substrate with on one of them of the surperficial 3a of sheet material 41 or back side 3c with grooving 49a, the 49b of sheet material 41.
In addition, illustrate and constitute semiconductor device 1 or the ceramic substrate 3 of semiconductor subassembly 65 or the example that substrate is formed by the cream that contains ceramic powders with sheet material 41, but be not limited thereto, as long as form by the material of the residual portion of can easily rupture at least grooving 49a, 49b.That is, ceramic substrate 3 or substrate for example can be formed by the organic substrate that contains glass fiber with sheet material 41.
In this manufacture method of first, different with aforesaid substrate with the sheet material preparatory process, form a plurality of lids 7 (lid preparatory process).
In this lid preparatory process, shown in Fig. 6 and 7, have nickel plating on the sheet material of conductivity, chromium, gold etc. at copper material, 42 alloys etc., or prepare the sheet material that the copper nichrome constitutes.The processing of this plate stamping formed top plate portion 35 and from the extended integratedly plate-like extending portion in each limit of top plate portion 35.
Boundary at top plate portion 35 and each extension is formed with incision hole 57, can easily crooked each extension with respect to top plate portion 35.In this lid preparatory process, each extension is formed on the outstanding side wall portion 37 of thickness direction of top plate portion 35 with respect to top plate portion 35 bendings.When this bending machining, also carry out front end with each side wall portion 37 from the processing of relative side wall portion 37 to the direction bending of leaving.
In addition, illustrate side wall portion 37 and on four limits of top plate portion 35, two pairs example is set, but be not limited thereto, also can at least only form a pair of in two opposite side of top plate portion 35.
In this lid preparatory process, implement punch process same as described above, on top plate portion 35, form peristome 35a.In addition, in this lid preparatory process, make top plate portion 35 distortion, form protuberance 39 to the outstanding roughly ring-type of side wall portion 37 equidirectionals by impression processing.
In addition, in this lid preparatory process, form top plate portion 35 or prolong punch process or the bending machining that forms side wall portion 37 that portion, peristome 35a and the impression processing that forms protuberance 39 can carry out simultaneously, also can carry out respectively.
After above-mentioned substrate finishes with the sheet material preparatory process, carry out on the 11a of the bottom surface of each recess 11, being coated with the bonding cream B1 that coating insulation material constitutes, the chip configuration operation of alignment arrangements semiconductor chip 5.In this chip configuration operation, the cream that carries out thermmohardening bonding cream B1 after carrying each semiconductor chip 5 solidifies.In this cream solidified, the state that is heated to 150 ℃ approximately kept one hour.After this chip configuration operation finishes, carry out carrying out the visual inspection whether electric wire 31 correctly connects by the operation that is connected of wire bonding by electric wire 31 electrical connection semiconductor chips 5 and pad electrode 17.
In addition, these chip configuration operations and connection operation can be carried out before coincidence operation described later, also can carry out with above-mentioned lid preparatory process is parallel.
After above-mentioned operation finished, as shown in Figure 8, conductive paste B2 was printed on the connection pads 25.Afterwards, a plurality of lids 7 overlap and are fixed on substrate with on the surperficial 3a of sheet material 41, to cover corresponding each semiconductor chip 5 (coincidence operation).
At this moment, the side wall portion 37 of each lid 7 is inserted into corresponding substrate respectively with in the patchhole 51 of sheet material 41.Thus, each lid 7 can easily carry out with respect to the location of a plurality of semiconductor chips 5.The front end bending of side wall portion 37 to leave from relative side wall portion 37, therefore, can easily import to side wall portion 37 in the patchhole 51 when this insertion.In addition, overlap in the operation, the protuberance 39 of each top plate portion 35 is contacted with above-mentioned conductive paste B2 at this, so lid 7 and shield member 23 electrical connections.
A plurality of lid 7 is overlapped at the surperficial 3a of substrate with sheet material 41, protuberance 39 is contacted with conductive paste B2, then as shown in Figure 9, with a plurality of lids 7 and substrate turns over sheet material 41 and the metal weight M of mounting on the substrate usefulness back side 3c of sheet material 41.Under this state, the state that is heated to 150 ℃ keeps carrying out in about one hour conductive paste curing, and conductive paste B2 is solidified.Thus, a plurality of lids 7 are fixed on substrate with on the sheet material 41, have finished the coincidence operation.
By finishing of this coincidence operation, constitute the semiconductor subassembly 65 that one links a plurality of semiconductor devices 1.
Then, stamp identification sign N (with reference to Fig. 1) such as identification title of semiconductor device 1 or sequence number on the surface of this lid 7.Then, with sheet material 41, be divided into each semiconductor device 1 (segmentation process) from grooving 49a, 49b fracture substrate.
In this segmentation process, as shown in figure 10, the side face L1 of the cylinder L of roughly cylindric formation is pushed with the surperficial 3a side of sheet material 41 from side direction substrate down, and cylinder L is moved along the surperficial 3a direction of substrate with sheet material 41.Thus, the substrate shape bending of sheet material 41 along the side face L1 of cylinder L, so residual the fracture simultaneously of grooving 49a, 49b, substrate is divided into each ceramic substrate 3 with sheet material 41.So, obtain by the single semiconductor device of having changed 1.
In this segmentation process usefulness, in order to protect each lid 7, between the side face L1 of cylinder L and lid 7, sandwich guard block P1 for well with flexual sheet.In addition, in this segmentation process, can not bounce, preferably the inhibition parts P2 that has flexual sheet with the configuration of the back side of sheet material 41 at substrate in order to make the semiconductor device of cutting apart 1.These guard blocks P1 and inhibition parts P2 can not move with sheet material 41 and each lid 7 with respect to substrate.
In this segmentation process, do not need by cutting apart by the cutting of water cooling breaking portion.Therefore, above-mentioned water can not take place invade unfavorable condition in the hollow space S2 from each lid 7.
In addition, in above-mentioned segmentation process, cylinder L is moved with respect to semiconductor subassembly 65, guard block P1 and inhibition parts P2, also can on the contrary semiconductor subassembly 65, guard block P1 and inhibition parts P2 be moved with respect to cylinder L.
In addition, as shown in figure 11, also can be from upside with the side face L1 of cylinder L by being pressed in the surperficial 3a side of substrate with sheet material 41.In addition, as mentioned above, using cylinder L to carry out under the situation of segmentation process, cylinder L is being rotated on guard block P1 move.
In addition, the fracture method of the residual portion of grooving 49a, the 49b in the segmentation process is not limited to use cylinder L to make the method for substrate with sheet material 41 bendings.Promptly, in segmentation process, also can make substrate produce shear stress, the residual portion of fracture grooving 49a, 49b with oppositely moving mutually on the thickness direction of sheet material 41 at residual of grooving 49a, 49b at substrate with a pair of ceramic substrate 3 that is positioned at grooving 49a, 49b both sides in the sheet material 41.
In the semiconductor device 1 that above manufacture method is made, as shown in Figure 3, grooving 49a, 49b residual constitutes as the part of the side 3b of ceramic substrate 3, therefore, forms plane of disruption 3d on the part of the side of ceramic substrate 3 3b.In addition, the patchhole of side wall portion 37 usefulness 51 is because the fracture of the residual portion by grooving 49a, 49b is divided into two halves, so become the otch 9 of ceramic substrate 3.That is, the side of patchhole 51 becomes the side 9a of otch 9.
According to above-mentioned semiconductor device 1 and lid 7, in overlapping operation, only need the side wall portion 37 of each lid 7 is inserted into substrate with in the patchhole 51 that forms on the sheet material 41, just can simultaneously and easily each lid 7 be located with respect to a plurality of semiconductor chips 5.That is, when covering each semiconductor chip 5,,, can easily lid 7 be located with respect to ceramic substrate 3 so can easily top plate portion 35 be located with respect to 3 of each ceramic title because each ceramic substrate 3 is sandwiched by the side wall portion 37 of lid 7 by each lid 7.
In addition, have the lid 7 of conductivity and the shield member 23 of ceramic substrate 3 and surround each semiconductor chip 5, specifically, the top plate portion 35 of lid 7 covers the top of semiconductor chip 5, the sidewall 37 of lid 7 covers the side of semiconductor chip 5, and then shield member 23 covers the below of semiconductor chip 5.These lids 7 and shield member 23 are electrically connected, and the current potential of lid 7 and shield member 23 is identical.
From the above mentioned, by these lid 7 and shield members 23 with conductivity, can prevent the electric noise intrusion hollow space S2 that semiconductor device 1 outside produces, can prevent that noise from arriving semiconductor chip 5, that is, can prevent misoperation reliably based on the semiconductor chip 5 of noise.
With reference to the accompanying drawings 12 and 13 the explanation semiconductor device of the present invention second embodiment.The key element identical with first embodiment paid identical symbol, omitted the explanation to it.In the semiconductor device 101 of second embodiment, be formed with side wall portion 71 in whole bights of the top plate portion 35 of lid 107.The material of lid 107 is identical with first embodiment.In addition, this side wall portion 71 can only be formed on the across corner at the diagonal angle that is arranged in top plate portion 35.
As mentioned above, form under the situation of side wall portion 71, as shown in figure 14, use in the sheet material preparatory process, each patchhole 72 that inserts each side wall portion 71 is formed on the cross section of grooving 49a, 49b at substrate in four bights of top plate portion 35.Patchhole 72 shown in Figure 12 and 13, forms otch 74 on each bight of ceramic substrate 103 after segmentation process.In addition, as shown in figure 15, in the lid preparatory process, form side wall portion 71 in each bight of the top plate portion 35 of lid 107.
In addition under the situation of the cross section that each patchhole 72 is formed on grooving 49a, 49b, use in the sheet material preparatory process at substrate, as shown in figure 14, the position from above-mentioned cross section separates in grooving 49a, 49b forms the through hole 73 with external connection terminals 19 same quantity.Each external connection terminals 19 is formed on the position that joins with each through hole 73.
Under the situation of this formation, residual by fracture grooving 49a, 49b in segmentation process disconnects through hole 73, is formed on the concavity otch 75 that the side 103b of ceramic substrate 103 exposes.This concavity otch 75 has and improves the effect of scolding tin with respect to the wettability of each external connection terminals 19 when semiconductor device 1 being installed on the installation base plate (not shown) by scolding tin, that is, can reliably semiconductor device 1 be electrically connected with installation base plate.
In the above-described embodiment, making semiconductor device 1 and utilizing substrate sheet material 41 at 101 o'clock, but be not limited thereto.That is, also lid 7 can be overlapped on each ceramic substrate 3 of single change in advance and make semiconductor device.
Under the situation of this formation, when overlapping lid 7 or 107 on ceramic substrate 3, relative pair of sidewalls portion 37,71 is engaged with the otch 9,74 of ceramic substrate 3 respectively, and its side 3b or 103b along ceramic substrate 3 or 103 is moved, thus, can sandwich ceramic substrate 3 or 103 by this pair of sidewalls portion 37,71.Therefore, can easily top plate portion 35 be located with respect to ceramic substrate 3 or 103, can easily lid 7 or 107 be located with respect to ceramic substrate 3 or 103.
In addition, as shown in figure 16, lid 7 ' also can the have side wall portion 83 that on the whole periphery of top plate portion 35, forms.
In this constitutes, the side wall portion 83 that the side of semiconductor chip 5 is had conductivity covers, thus, even produce noise, can prevent that also it from invading the hollow space S2 of semiconductor device 84 and preventing that it from arriving semiconductor chip 5 in side wall portion 81,83 in the outside of semiconductor device 84.Therefore, can prevent misoperation reliably based on the semiconductor chip 5 of noise.
In addition, as preventing that the side of above-mentioned noise from semiconductor device 1 and 101 from invading the method for hollow space S2, exemplify the conductive paste that coating or spraying copper or silver etc. have conductivity on the side of ceramic substrate 3 and 103 3b and 103b or otch 9,74.In addition, as long as the coating of this conductive paste or spraying are at least on the side 3b and 103b or otch 9,74 of the ceramic substrate 3 that is not covered by the side wall portion 37,71,81,83 of lid 7 and 107 and 103.
In addition, illustrate the example of otch 9,74 on being formed on from the surperficial 3a of ceramic substrate 3 and 103 and 103a to the whole base plate thickness direction of back side 3c and 103c, but be not limited thereto.That is, otch 9 and 94 can at least only be formed on the surperficial 3a and the 103a side of ceramic substrate 3 and 103.At this moment, be used for otch 9,74 and the substrate that forms becomes from substrate with the patchhole 51 and 72 of sheet material 41 and caves in and the recess that the end is arranged of formation with the surface of sheet material 41.
In addition, on lid 7 and 107, form a plurality of side wall portions 37,71,81 o'clock, also can on the side of ceramic substrate 3 and 103 3b and 103b, not form otch.
Below, second manufacture method of the semiconductor device 1 (Fig. 2 and Fig. 3) of above-mentioned first embodiment of the invention is described.
In second manufacture method, utilize the substrate of Fig. 4 and Fig. 5 explanation identical with first manufacture method with the sheet material preparatory process.
In this second manufacture method, at aforesaid substrate or concurrently, utilize and be formed on aforesaid substrate and form the lid usefulness sheet material 55 (lid preparatory process) that connects a plurality of lids 7 integratedly with the identical configuration of the recess on the sheet material 41 11 with the front and back of sheet material operation.
In this lid preparatory process, shown in Figure 17,18,19A and 19B, prepared on copper material, 42 alloys etc. has the sheet material of conductivity, to implement nickel plating, chromium plating, gold-plated etc. sheet material, or the sheet material that constitutes by pack fong.Then, to carrying out punch process on this sheet material, form the top plate portion 35 of each lid 7 or the linking part that top plate portion adjacent one another are 35 is linked.This linking part forms tabular.Intersection at top plate portion 35 and each linking part is formed with incision hole 57 (Figure 19 A), makes linking part with respect to top plate portion 35 bending easily.In addition, with the above-mentioned punch process of similarly carrying out, on each top plate portion 35, form peristome 35a.
In addition, in this lid preparatory process, each linking part is bent to U-shaped roughly and form to the outstanding bend 59 of the thickness direction of each lid 7.Fore-end at each bend 59 forms the fracture portion 61 that can easily rupture.Shown in Figure 19 B, in fracture portion 61, at the exterior side of bend 59 by pressure processing or etch partially and be processed to form otch 61a for well.Also can implement pressure processing and form at the fore-end of bend 59 than unfertile land.In this lid preparatory process, make each top plate portion 35 distortion by impression processing, form protuberance 39 to the outstanding roughly ring-type of the direction identical with above-mentioned bend 59.
Identical with first manufacture method, by chip configuration operation and electrical connection operation, with carrying a plurality of semiconductor chips on the sheet material 41, be electrically connected at substrate.
After above-mentioned operation finished, conductive paste B2 was printed on the connection pads 25, afterwards, as shown in figure 20, lid was fixed on substrate with on the surperficial 3a of sheet material 41, so that a plurality of lid 7 covers a plurality of semiconductor chips 5 (coincidence operation) respectively with sheet material 55 coincidences.
At this moment, lid is inserted the patchhole 51 of each substrate usefulness sheet material 41 respectively with the bend 59 of sheet material 55.Thus, can simultaneously and easily each lid 7 be located with respect to a plurality of semiconductor chips 5.In addition, at this moment, the protuberance 39 of each top plate portion 35 is contacted with above-mentioned conductive paste B2.Thus, lid 7 and shield member 23 are electrically connected.
Then, with first manufacture method in the same manner, as shown in Figure 9, lid is turned around with sheet material 41 with sheet material 55 and substrate, at substrate with mounting metallic weight M on the back side 3c of sheet material 41.Under this state, the state that is heated to 150 ℃ approximately kept one hour, carried out conductive paste and solidified, and conductive paste B2 is solidified.Thus, lid is fixed on substrate with on the sheet material 41 with sheet material 55, finishes the coincidence operation.
By finishing of this coincidence operation, constitute the semiconductor subassembly 65 that one links a plurality of semiconductor devices 1.
Then, with first manufacture method in the same manner, on the surface of each lid 7, stamp identification sign N (with reference to Fig. 1) such as identification title of semiconductor device 1 or sequence number.Then, utilize Figure 10 or cylinder L shown in Figure 11 to carry out segmentation process.By this segmentation process, at grooving 49a, 49b and fracture portion 61 substrate is decided what is right and what is wrong with sheet material 55 with sheet material 41 and lid, be divided into each semiconductor device 1.
In the semiconductor device of making by the second above manufacture method 1, shown in Fig. 1～3, bend 59 to be decided what is right and what is wrong in fracture portion 61, half of bend 59 becomes the side wall portion 37 of lid 7.Front end at the side wall portion 37 of lid 7 forms the plane of disruption.
By second manufacture method of this semiconductor device 1, use in sheet material preparatory process and the lid preparatory process at substrate, be pre-formed bend 59 with grooving 49a, 49b or fracture portion 61.Therefore, in segmentation process, use cylinder L simultaneously curved substrate with sheet material 41 and lid with sheet material 55 just can easily rupture residual or the easy fracture portion 61 of grooving 49a, 49b.Therefore, can easily substrate be divided into each ceramic substrate 3 or lid 7 with sheet material 41 and lid with sheet material 55.That is, can easily once produce a large amount of semiconductor device 1.
In addition, by this manufacture method, in overlapping operation, only, just can simultaneously and easily make each lid 7 with respect to a plurality of semiconductor chips 5 location by the bend 59 of lid with sheet material 55 is inserted in the patchhole 51 of substrate with formation on the sheet material 41.Therefore, can further improve the manufacturing efficient of semiconductor device 1.
In addition, by above-mentioned semiconductor subassembly 65, before segmentation process, constitute the semiconductor subassembly 65 that a plurality of semiconductor device 1 one are fixing.By carrying with the state of semiconductor subassembly 65, and carry and compare being divided into a plurality of semiconductor device 1, can carry a plurality of semiconductor devices 1 easily.
In addition, in above-mentioned lid preparatory process, show and be formed on lid, still be not limited thereto with the flat example of being shaped as of each linking part on the plate body 55.That is, shown in Figure 21 A, when punch process, also can form than the wide pars intermedia 91 of its connection root portion, and also can form through hole 93 in the position of the fracture portion 61 of containing this pars intermedia 91 as linking part.
In addition, shown in Figure 21 B, also can connect the circuitous circuitous portion 95 of formation between root portion and the above-mentioned pars intermedia 91 at it on each linking part.In addition, for example, shown in Figure 21 C, also can between the connection root portion of linking part and pars intermedia 91, form wide middle part 97, and on this middle part 97, further form through hole 99.Under the situation of these formations,, can process more easily crooked linking part and form bend 591～593 by specific pressure by on linking part, forming through hole 93,99 or circuitous portion 95.
Below, second manufacture method of the semiconductor device 101 of the second embodiment of the invention shown in Figure 12 and 13 is described.
In this manufacture method, as shown in figure 15, in this lid preparatory process, on each bight of top plate portion 35, form the side wall portion 71 of each lid 107.The bend 59 that becomes the linking portion of each lid 7 is formed on and leaves from above-mentioned bight and be independent of on the position of side wall portion 71.Under the situation of this formation, the side wall portion 71 of each top plate portion 35 is configured on the bight of each ceramic substrate 103, therefore can more easily lid 107 be located with respect to each ceramic substrate 103.
In this lid device operation, for example, leading section is hard and crisp at least with in the bend 59 of sheet material 55 in order to make the lid that is inserted into patchhole 51, and implements to quench for well.
In addition, in the lid preparatory process, as shown in figure 23, can form top plate portion 35 and bend 59 respectively, and utilize these top plate portions 35 of crimping such as mould A, B and bend 59 and constitute lid with sheet material 55.At this moment, bend 59 is by forming than top plate portion 35 hard and crisp metal materials.At this moment, can more easily fracture portion 61 be decided what is right and what is wrong.
In above-mentioned example, show at substrate with forming patchhole 51 on the sheet material 41, form the roughly example of the bend 59 of U-shaped at lid on sheet material 55, but be not limited thereto.As long as use with sheet material 41 and lid at substrate at least and form each grooving 49a, 49b and fracture portion 61 on the sheet material 55.Under the situation of this formation, lid 7 only is made of top plate portion 35, and the plane of disruption of fracture portion 61 also is formed on the top plate portion 35.During this constitutes, in overlapping operation, only, lid just a plurality of lids 7 can be configured on the position that covers a plurality of semiconductor chips 5 respectively simultaneously with the surface of sheet material 41 by being positioned at substrate with sheet material 55 coincidences.Therefore, can realize that the manufacturing efficient of semiconductor device 1 improves and cut down the manufacturing cost of semiconductor device 1.
As mentioned above, do not form under the situation of bend 59 on sheet material 55 at lid, shown in Figure 24 A, lid forms by form metallic film 113 on the surperficial 111a of roughly tabular ceramic board 111 with sheet material 55.At the lid of making this formation during with sheet material 55, shown in Figure 24 B, the cream that preparation will contain ceramic powders forms the tellite 115 of sheet, then, forms metallic film 113 by grid printing etc. on the surperficial 111a of tellite 115.This when printing, in metallic film 113 with substrate with forming groove 113a on the corresponding position of grooving 49a, the 49b of sheet material 41, that is, on the position corresponding, print by the pattern that does not form metallic film 113 with above-mentioned grooving 49a, 49b.Then, shown in Figure 24 A, in the surperficial 111a of tellite 115 and back side 111b, form grooving (fracture portion) 117a, 117b on the formation position of above-mentioned groove 113a, then, sintering tellite 115 and make ceramic board 111.
Under the situation of this formation, in segmentation process, by grooving 117a, 117b can easily rupture lid with sheet material 55 and ceramic substrate with sheet material 41.In overlapping operation, the lid of above-mentioned formation overlaps lid with sheet material 55 and is fixed on substrate with on the sheet material 41 with sheet material 55, so that metallic film 113 is relative with sheet material 41 with substrate.Thus, metallic film 113 can be electrically connected with the binding pad 25 that forms on the sheet material 41 with substrate.
Below, with reference to the 3rd embodiment of Figure 25～28 explanations semiconductor device of the present invention.
As shown in figure 25, the semiconductor device 201 of this embodiment have form roughly tabular ceramic substrate 203, at the semiconductor chip 5 and the lid 207 of the surperficial 203a side superimposed configuration of ceramic substrate 203.
Other formation is identical with the semiconductor device 1 of first embodiment, the symbol that identical element annotation is identical, and omit explanation.
The card that each leading section 38a card of pair of sidewalls portion 38 ends at ceramic substrate 203 ends in the end difference 10b.That is, each leading section 38a is inserted into card and ends among the end difference 10b.
In addition, the side 209a Elastic Contact of each middle part (fastener) 38b of pair of sidewalls portion 38 and otch 209.That is, the card that the strain of each fastener 38b by side wall portion 38 is pressed against otch 209 ends on the end difference 10b, and ends on the 209a of the side of otch 209 by its frictional force card.Therefore, by these pair of sidewalls portion 38 clamping ceramic substrates 203.
As mentioned above, by side wall portion 38 and card only collude 203 of extension and 38 pairs of ceramic substrates of side wall portion between end difference 10b clamping, lid 7 is fixed on the ceramic substrate 3.Decide under the state at this figure, the protuberance 39 of top plate portion 35 remains on the state with connection pads 25 butts of ceramic substrate 203.
Below, the as above manufacture method of the semiconductor device 201 of the 3rd embodiment of formation is described.
Use in the sheet material preparatory process at substrate, same with above-mentioned manufacture method, at first, prepare the tellite of each insulating barrier 27,28,29,30 of formation ceramic substrate 203.
Then, each tellite is implemented punch process, become otch 9, the importing end difference 10a of ceramic substrate 3 and block the part of ending end difference 10b, recess 11, hole 13 and end difference 15.On this tellite, with above-mentioned manufacture method similarly, form the employed through hole 43,45 of formation, pad electrode 17, external connection terminals 19, wiring part 21, shield member 23 and the connection pads 25 of wiring part 21 or shield member 23.
These a plurality of green sheet layers are folded and the folded body 47 of formation green sheet layers.Under this state, at otch 209, import end difference 10a and card and end on the formation part of end difference 10b and form a plurality of patchholes 51 that on the thickness direction of the folded body 47 of green sheet layers, connect.
In addition, on the surface of the stacked body 47 of this printed circuit and the back side, form cancellate grooving 49a, 49b.At last,, on pad electrode 17, external connection terminals 19 and connection pads 25, carry out nickel plating and gold-plated, finish the manufacturing of substrate with sheet material by with the folded body 47 of this green sheet layers of sintering more than 1000 ℃.
In the lid preparatory process, similarly prepare sheet material with first manufacture method of the semiconductor device of first embodiment, the top plate portion 35 of a plurality of lids 207 similarly forms.With reference to Figure 26, lid 207 forms from the outstanding jut 58 in each limit of top plate portion 35.Intersection at top plate portion 35 and each jut 58 is formed with incision hole 57, can be easily with jut 58 with respect to top plate portion 35 bendings.Each jut 58 is crooked and become to the outstanding side wall portion 38 of the thickness direction of each lid 297.With respect to the pair of sidewalls portion 38 that each lid 207 forms, the interval more mutual than a pair of patchhole 51 that sandwiches ceramic substrate 203, its front end interval each other is narrow.
With first manufacture method in the same manner after substrate has carried out the chip configuration operation and has been electrically connected operation on sheet material 41, shown in Figure 27 and 28, a plurality of lids 207 overlap and are fixed on substrate with on the surperficial 203a of sheet material 41 and cover a plurality of semiconductor chips 5 (coincidence operation) respectively.
At this, the side wall portion 38 of each lid 207 is inserted into substrate respectively with in the patchhole 51 of sheet material 41.When this inserts, make pair of sidewalls portion 38 when importing end difference 10a strain, insert patchhole 51, the leading section 38a of each side wall portion 38 is positioned at card and ends end difference 10b.At this moment, the protuberance 39 of each top plate portion 35 and connection pads 25 butts of ceramic substrate 3.
As mentioned above, by side wall portion 38 is inserted into patchhole 51 respectively, can easily each lid 207 be located with respect to a plurality of semiconductor chips 5.Be positioned at card by the leading section 38a that makes side wall portion 38 and end end difference 10b, sandwich ceramic substrate 203, each lid 207 is fixed on substrate with on the sheet material 41 by a pair of fastener 38b.And then, because the protuberance 39 of each top plate portion 35 and connection pads 25 butts of ceramic substrate 3, so lid 207 is electrically connected with shield member 23.From the above mentioned, finish the coincidence operation.
Then, carry out segmentation process, with sheet material 41, substrate is divided into each semiconductor device 201 with sheet material 41 by grooving 49a, 49b fracture substrate by Figure 10 or cylinder shown in Figure 11.
As mentioned above, by this manufacture method, in overlapping operation, because the leading section 38a of above-mentioned pair of sidewalls portion 38 is hooked on card only on the end difference 10b, fastener 38b sandwiches each ceramic substrate 3, so can not use adhesive just each lid 207 to be fixed on each ceramic substrate 203 reliably.Therefore, can seek the manufacturing operation efficient of semiconductor device 1, the processing when easily making.
In addition, only needing to be inserted into substrate by the side wall portion 38 with lid 207 just can easily locate each lid 207 with the patchhole 51 that forms on the sheet material 41 with respect to a plurality of semiconductor chips 205.That is, when covering each semiconductor chip 5 by each lid 207 because each ceramic substrate 203 sandwiched by above-mentioned side wall portion 38, thus can be easily with top plate portion 35 with respect to each ceramic substrate 203 status.
In addition, also can the only fastener on the end difference that is recessed to form from the side of ceramic substrate 203 203b side of insertion and card be set on the leading section 38a of pair of sidewalls portion 38.Under the situation of this formation, can prevent that lid 207 from coming off from ceramic substrate 203, so can reliably lid 207 be fixed on the ceramic substrate 203.
The part that the shield member 23 of ceramic substrate 3 and being electrically connected of lid 207 also can make shield member 23 exposes outside from the side 203b side direction of ceramic substrate 203, and side wall portion 38 is connected with this exposed portions serve.
That is, for example shown in Figure 29, at first insulating barrier 27 of the back side 203c that forms ceramic substrate 203 with form and be formed with card same as the previously described embodiments between second insulating barrier 28 in hole 13 and end end difference 10c.Be formed with shield member 23 at the back side of second insulating barrier 28.The part of this shield member 23 is ended end difference 10c from card and is formed portion of terminal 65 to exposing outside.This portion of terminal 65 is towards the direction identical with the back side 203c of ceramic substrate 203.
The leading section of pair of sidewalls portion 67 (fastener) 67a is fastened on card respectively to be ended on the end difference 10c, is connected with portion of terminal 65.In addition, after covering lid 207 on the ceramic substrate 203, can make the cylinder distortion, make above-mentioned leading section 67a be fastened on card and end on the end difference 10c and by being pressed on the portion of terminal 65 by pushing etc.
In addition, the portion of terminal 65 that is electrically connected with side wall portion 67 for example can be exposed from the side 203 side direction foreign sides of ceramic substrate 203.At this moment, shown in the 3rd embodiment, be crimped on its portion of terminal, side wall portion 38 can be electrically connected with shield member 23 by the fastener 38b that makes the side wall portion 38 that sandwiches ceramic substrate 203.
Even under the situation of these formations, owing to lid 207 is electrically connected with shield member 23, so the current potential of lid 207 and shield member 23 is identical.Therefore, by these lid 207 and shield members 23, can prevent to invade hollow space S2, and prevent that it from arriving semiconductor chip 5 at the electric noise that the outside of semiconductor device 201 produces with conductivity, that is, can prevent misoperation reliably based on the semiconductor chip 5 of noise.
In addition, in the formation of Figure 29, shield member 23 is connected with semiconductor chip 5 via a pad electrode 17 and electric wire 31, and then, be connected with an external connection terminals 19.Be connected with the supply voltages such as Vss of the installation base plate that this semiconductor device 71 is installed (not having diagram).This shield member 23 and the formation that is electrically connected of semiconductor chip 5 and external connection terminals 19 also are applicable to above-mentioned other embodiment.
In addition, on the otch 209 of ceramic substrate 203, be formed with card and end end difference 10b, 10c, but be not limited thereto, as long as be formed for inserting and being hooked on the end difference of the fastener that forms on the side wall portion 38,67 at least.That is, on otch 209, recess (end difference) can become by canyon topography on the 209a of side.At this moment, the middle part at sidewall 38,67 is formed with the fastener that inserts above-mentioned recess.
In addition, in above-mentioned the 3rd embodiment, a plurality of lids 207 have been formed respectively, but also can with second manufacture method of the semiconductor device of first embodiment similarly, utilize to link a plurality of integratedly lid 207 and lid sheet material formation with the identical configuration of the recess that forms on the sheet material 41 11 with substrate.That is the linking part of periphery that, form to connect the top plate portion 35 of each lid 207 adjacent one another are on sheet material at above-mentioned lid.On this linking part, be preferably formed the fracture portion that to rupture easily.By this fracture portion, in segmentation process, can be with residual and yielding the simultaneously fracture of lid usefulness sheet material of substrate with the grooving 49a, the 49b that form on the sheet material 41.
As mentioned above, under the situation of using lid with sheet material manufacturing semiconductor device, in overlapping operation, can simultaneously each lid 7 be located with respect to a plurality of semiconductor chips 5, in addition, in segmentation process, owing to can obtain a plurality of semiconductor devices as long as substrate is ruptured with sheet material simultaneously with sheet material 41 and lid by grooving 49a, 49b and fracture portion, so can seek the raising of the manufacturing efficient of semiconductor device, cut down the manufacturing cost of semiconductor device.
In addition, when making semiconductor device 201, used substrate sheet material 41, but be not limited thereto, lid 207 is overlapped respectively on each ceramic substrate 203 of single change in advance.
Under the situation of this formation, when overlapping lid 207 on ceramic substrate 203, by utilizing relative pair of sidewalls portion 38,67 clamping ceramic substrates 203, or the card that the part of side wall portion 38,67 is inserted and is hooked on ceramic substrate 203 ends on end difference 10b, the 10c, lid 207 can be fixed on the ceramic substrate 203.
In addition, represent on the 203b of the side of ceramic substrate 203, to form the example of the otch 209 that engages with side wall portion 38,67, but as long as be configured in the side 203b side of ceramic substrate 203 to major general's side wall portion 38,67 adjacency.Especially, not utilizing substrate to make under the situation of semiconductor device 201, that is, under situation about lid 207 being covered on each ceramic substrate 203, can not form above-mentioned otch 209 with sheet material 41.
Below, with reference to the semiconductor device 301 of accompanying drawing 30 explanation fourth embodiment of the invention.With the identical identical reference symbol of element annotation of semiconductor device of first embodiment of the invention described above, and omitted explanation.
In the present embodiment, with the semiconductor device of first embodiment in the same manner, form substrate with sheet material 41 by substrate with the sheet material preparatory process.
Then, in the lid preparatory process, as shown in figure 30, form a plurality of lids 307 that only constitute respectively by roughly tabular top plate portion 35.The difference of the semiconductor device of this lid 307 and first embodiment is: do not form the roughly protuberance 39 and the side wall portion 37 of ring-type on top plate portion 35.Lid 307 for example forms by the material that pack fong (Cu-Ni-Zn alloy), the copper material of having electroplated, 42 alloys (Fe-42 quality %Ni alloy) electroplated etc. have conductivity.As plating, can carry out for example nickel plating, chromium plating, gold-plated etc.
Under the situation of this formation, in overlapping operation, each lid 307 coincidence is fixed on substrate with on the surperficial 3a of sheet material 41, cover semiconductor chips 5 by lid 307.Overlap operation by this, constitute the semiconductor subassembly 302 that covers a plurality of semiconductor chips 5 respectively by a plurality of lids 307.Top plate portion 35 bonds fixing mutually via conductive paste B2 and connection pads 25, lid 307 is fixed on the ceramic substrate 3 thus.In addition, lid 307 surrounds semiconductor chip 5 with shield member 23, and the shield member 23 of ceramic substrate 3 is electrically connected with lid 307.
By implement to obtain the semiconductor device 301 of single change with respect to this semiconductor subassembly 302 by the segmentation process of grooving 49a, 49b fracture substrate with sheet material 41.
Even under the situation of making semiconductor device 301 as mentioned above, also can seek the raising of the manufacturing efficient of semiconductor device 301, cut down the manufacturing cost of semiconductor device 301.In addition, before segmentation process, a plurality of semiconductor devices 301 are integrally formed as semiconductor subassembly 302, so by carrying with the state of this semiconductor subassembly 302, can carry a plurality of semiconductor devices 301 easily.
In addition, as mentioned above, when in the lid preparatory process, forming a plurality of independent lid 307, be not limited to and after overlapping operation, use cylinder L etc. to implement segmentation process, for example also can behind segmentation process, implement the coincidence operation.
In the semiconductor device of first～the 4th above embodiment, exemplified sound press sensor chip (microphone) as semiconductor chip 5, but be not limited to this, semiconductor chip 5 for example also can be to measure the pressure of space outerpace of semiconductor device 1 or the pressure sensor that pressure changes.
More than, be described in detail embodiments of the present invention with reference to accompanying drawing, but concrete formation is not limited to this real-time mode, can so long as do not break away from the design alteration of the scope of purport of the present invention.
Claims (25)
1. a semiconductor device is characterized in that, comprising:
The surface has the substrate of the blank part of hollow;
The semiconductor chip of lift-launch on the blank part of described substrate;
Lid, described lid have relative with described substrate and cover the roughly tabular top plate portion of described blank part and outstanding and be fastened at least one pair of side wall portion on the side of described substrate to described substrate from the periphery of described top plate portion.
2. semiconductor device as claimed in claim 1 is characterized in that, is formed with the peristome that connects and the blank part of described hollow is communicated with the outside along the thickness direction of described substrate on described top plate portion.
3. semiconductor device as claimed in claim 1 is characterized in that, the otch of at least one pair of of on the side of described substrate is formed with thickness direction at described substrate, extending, and described a pair of side wall portion engages with described otch.
4. semiconductor device as claimed in claim 1 is characterized in that, described at least one pair of side wall portion has card and ends fastener at described substrate.
5. semiconductor device as claimed in claim 4 is characterized in that, described fastener contacts with the side elastic of described substrate, ends by blocking with the frictional force of described side.
6. semiconductor device as claimed in claim 4 is characterized in that, is formed with the end difference that is recessed to form on the described side of described substrate, and described fastener engages with described end difference.
7. semiconductor device as claimed in claim 4, it is characterized in that, described lid has conductivity, on described substrate, be formed with the shield member of conductivity that surrounds the blank part of described hollow with described lid, at least a portion of described shield member has side from described substrate to the portion of terminal that exposes outside, and described fastener is connected with described portion of terminal.
8. semiconductor device as claimed in claim 1 is characterized in that, described semiconductor chip is the sound press transducer.
9. semiconductor device as claimed in claim 1 is characterized in that, along at least a portion of the side of the described substrate of described substrate thickness direction, is formed with the face of deciding what is right and what is wrong that exposes laterally from described side.
10. lid, it uses on the semiconductor device that constitutes at the semiconductor chip that carries on the surface via the thickness direction of the blank part covered substrate of hollow, it is characterized in that, comprising: the roughly tabular top plate portion of relative configuration with described blank part; At least one pair of outstanding from the periphery of described top plate portion and engage side wall portion with the side of described substrate to described substrate.
11. lid as claimed in claim 10 is characterized in that, is formed with the peristome that connects and make the blank part of described hollow to be communicated with the outside along described thickness direction on described top plate portion.
12. lid as claimed in claim 10 is characterized in that, described top plate portion and described side wall portion have conductivity, and described side wall portion is formed with a plurality of in the position of the side that surrounds described semiconductor chip at least.
13. semiconductor device as claimed in claim 10 is characterized in that, described top plate portion and described side wall portion have conductivity, and described side wall portion is formed on the whole periphery of described top plate portion.
14. the manufacture method of a semiconductor device, the semiconductor device of this manufacture method manufacturing have the semiconductor chip that carries on the one side of lid covered substrate thickness direction of conductivity via the blank part utilization of hollow, it is characterized in that having following operation:
Substrate sheet material preparatory process, it is formed for it is divided into the section datum line of each described substrate on sheet material at substrate, and described substrate is with sheet material a plurality of described semiconductor chips of configuration side by side on the described one side of described thickness direction;
The lid preparatory process, it forms a plurality of described lid that covers the described a plurality of semiconductor chips that dispose on the one side of described substrate with sheet material respectively;
Overlap operation, it is fixed with described substrate described a plurality of lid respectively with the described one side side superimposed of sheet material, so that described a plurality of lid covers described a plurality of semiconductor chip respectively;
Segmentation process, it is decided what is right and what is wrong out described substrate by described section datum line with sheet material, be partitioned into each described semiconductor device.
15. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that, described lid preparatory process is included on the described lid operation that forms the peristome that the blank part that makes described hollow is communicated with the outside.
16. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that,
Described lid preparatory process comprises following operation, promptly, with be disposed at described substrate and form the lid sheet material that connects described a plurality of lids with the identical configuration of the described a plurality of semiconductor chips on the one side of sheet material, and, in the portion that decides what is right and what is wrong that described lid can be decided what is right and what is wrong with the coupling part formation of the described lid adjacent one another are of sheet material
Described coincidence operation comprises fixes with sheet material and described substrate described lid with a described end face side superimposed of sheet material, so that described a plurality of lid covers the operation of described a plurality of semiconductor chips respectively,
Described segmentation process is included in the operation of also by the described portion that decides what is right and what is wrong described lid being decided what is right and what is wrong with sheet material when described substrate is decided what is right and what is wrong with sheet material.
17. the manufacture method of semiconductor device as claimed in claim 16 is characterized in that,
Described substrate is included in the operation that forms patchhole on the part of the described section datum line between the described substrate adjacent one another are with the sheet material preparatory process,
Described lid preparatory process comprises following operation, promptly, use in the sheet material at described lid, the bend that forms roughly U-shaped ground bending and give prominence in the coupling part of the described lid adjacent one another are that inserts described patchhole to described lid thickness direction, and, fore-end at described bend forms the described portion that decides what is right and what is wrong
Described coincidence operation comprises the operation of described bend being inserted described patchhole.
18. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that,
Described substrate is included in the operation that forms patchhole on the part of the described section datum line between the described substrate adjacent one another are with the sheet material preparatory process,
Described lid preparatory process is included in the operation that forms on the described lid to the outstanding side wall portion of its thickness direction,
Described coincidence operation comprises the operation of described side wall portion being inserted described patchhole.
19. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that, described segmentation process comprises described substrate with the described one side side of sheet material by the operation that is pressed on the side face that roughly forms columned cylinder.
20. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that,
Described substrate is included in described substrate forms the conductive shield parts with the component part of the described substrate in the sheet material operation with preparatory process, this shield member and described lid together surround the blank part of the described hollow that disposes described a plurality of semiconductor chips respectively
Described coincidence operation comprises the operation with described lid and the electrical connection of described shield member.
21. the manufacture method of semiconductor device as claimed in claim 14, it is characterized in that, described substrate comprises with the sheet material preparatory process: the operation of multilayer laminated tellite, this tellite form lamellar by the thickener that will contain ceramic powders and form printed circuit from the teeth outwards and constitute; On the folded body of described green sheet layers, form the operation of described grooving; Form the operation of described substrate by firing the folded body of described green sheet layers with sheet material.
22. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that,
Described substrate is included in the operation that forms patchhole in the described section datum line on the division position on the limit of each substrate with the sheet material preparatory process,
Described lid preparatory process is included in the operation that forms relative to one another on described each lid to the outstanding pair of sidewalls portion of its thickness direction,
Described coincidence operation comprises inserts described patchhole with described side wall portion, operation that each part that makes described a pair of side wall portion and each substrate card end.
23. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that, described substrate is included in the operation that forms grooving on the described section datum line with the sheet material preparatory process,
Described segmentation process comprises by the described grooving described substrate operation with sheet material of deciding what is right and what is wrong.
24. the manufacture method of semiconductor device as claimed in claim 14 is characterized in that, described semiconductor chip is the sound press transducer.
25. a semiconductor unit, it is used to make semiconductor device, and this semiconductor device has the semiconductor chip that carries on the one side of thickness direction of lid covered substrate of conductivity and constitutes via the blank part utilization of hollow, it is characterized in that,
Have the substrate that on the one side of described thickness direction, disposes a plurality of described semiconductor chips side by side with sheet material and overlap and be fixed on described substrate and also cover a plurality of described lid of described a plurality of semiconductor chips respectively with the one side side of sheet material,
Be formed with the grooving that is used for described substrate is divided into sheet material each described substrate at described substrate on sheet material.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP351654/05 | 2005-12-06 | ||
| JP351653/05 | 2005-12-06 | ||
| JP2005351653A JP4784289B2 (en) | 2005-12-06 | 2005-12-06 | Manufacturing method of semiconductor device |
| JP376393/05 | 2005-12-27 | ||
| JP296013/06 | 2006-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1983572A true CN1983572A (en) | 2007-06-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610153136 Pending CN1983572A (en) | 2005-12-06 | 2006-12-05 | Semiconductor device and manufacturing method thereof |
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| JP (1) | JP4784289B2 (en) |
| CN (1) | CN1983572A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101483979B (en) * | 2007-10-03 | 2011-04-06 | 阿尔卑斯电气株式会社 | Electronic circuit module |
| CN102519655A (en) * | 2008-04-24 | 2012-06-27 | 株式会社藤仓 | Pressure sensor module and electronic component |
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| JPH11312889A (en) * | 1998-04-28 | 1999-11-09 | Kinseki Ltd | Electronic component container |
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| JP3492594B2 (en) * | 2000-04-26 | 2004-02-03 | シャープ株式会社 | Semiconductor module |
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| JP2004235184A (en) * | 2003-01-28 | 2004-08-19 | Matsushita Electric Ind Co Ltd | High frequency device |
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2005
- 2005-12-06 JP JP2005351653A patent/JP4784289B2/en not_active Expired - Fee Related
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2006
- 2006-12-05 CN CN 200610153136 patent/CN1983572A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101483979B (en) * | 2007-10-03 | 2011-04-06 | 阿尔卑斯电气株式会社 | Electronic circuit module |
| CN102519655A (en) * | 2008-04-24 | 2012-06-27 | 株式会社藤仓 | Pressure sensor module and electronic component |
| CN101566513B (en) * | 2008-04-24 | 2012-11-21 | 株式会社藤仓 | Pressure sensor module and electronic component |
| US8516892B2 (en) | 2008-04-24 | 2013-08-27 | Fujikura Ltd. | Pressure sensor module and electronic component |
| CN102925347A (en) * | 2012-08-29 | 2013-02-13 | 张楚凡 | Semiconductor chip, semiconductor enzyme chip, and method for screening target enzyme |
| CN102925347B (en) * | 2012-08-29 | 2016-01-20 | 张楚凡 | The method of semi-conductor chip, semi-conductor enzyme chip and screening target enzyme |
| CN109592634A (en) * | 2018-12-07 | 2019-04-09 | 中国科学院上海微系统与信息技术研究所 | Active base plate and preparation method thereof |
| CN109592634B (en) * | 2018-12-07 | 2020-10-09 | 中国科学院上海微系统与信息技术研究所 | Active substrate and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007158044A (en) | 2007-06-21 |
| JP4784289B2 (en) | 2011-10-05 |
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