CN1979344B - Exposure method using exposure mask - Google Patents
Exposure method using exposure mask Download PDFInfo
- Publication number
- CN1979344B CN1979344B CN2006101714485A CN200610171448A CN1979344B CN 1979344 B CN1979344 B CN 1979344B CN 2006101714485 A CN2006101714485 A CN 2006101714485A CN 200610171448 A CN200610171448 A CN 200610171448A CN 1979344 B CN1979344 B CN 1979344B
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- mask
- irradiation area
- pattern
- lap
- exposure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
The present invention provides an exposure method using a mask. A zoning exposure method using a mask comprises the following steps: providing a substrate having a film; forming a photoetching substratum on the film, wherein the photoetching substratum is divided into at least a first irradiation region and a second irradiation region; irradiating a first light to the first irradiation region through the mask by an exposure device; and arranging the mask on the second irradiation region; irradiating a second light to the second irradiation region by the exposure device, wherein the intensity of the second light exposed on the left side of the second irradiation region is basically same as the intensity of the first light exposed on the right side of the first irradiation region, thus reducing critical dimension deviation caused by the exposure deviation in a boundary region so as to minimize the seam imperfection in a liquid crystal display board.
Description
The application be the original bill application number be 200410103651.X application for a patent for invention (applying date: on Dec 30th, 2004, denomination of invention: exposed mask and use the exposure method of this exposed mask) divide an application.
Technical field
The present invention relates to LCD panel, more specifically, relate to a kind of exposed mask that the light intensity deviation of exposure device (exposer) is compensated.
Background technology
Usually, liquid crystal display device comes display image by the light transmission of the liquid crystal of use electric field controls dielectric anisotropy.This liquid crystal display device comprises: LCD panel, and it has a plurality of liquid crystal cells of arranging with matrix-style that are used for display image; And the driving circuit that is used to drive this LCD panel.The active matrix-type liquid crystal display device that uses thin film transistor (TFT) to drive liquid crystal cells independently is widely used in the display device of televisor and personal computer.
This LCD panel comprises: thin film transistor base plate respect to one another and color filter array substrate; Be arranged on the liquid crystal between these two substrates; And the sept that is used to keep the cell gap between the substrate.
This thin film transistor base plate comprises: select lines and data line; Be formed near the thin film transistor (TFT) in point of crossing of select lines and data line; The pixel electrode that links to each other with thin film transistor (TFT) at each liquid crystal cells place; And be formed on alignment film on this thin film transistor base plate.
Filter substrate comprises: with the corresponding a plurality of color filters of a plurality of liquid crystal cells; Between these color filters, be used to reflect the black matrix (black matrix) of exterior light; Be used for providing jointly the public electrode of reference voltage to a plurality of liquid crystal cells; And be formed on alignment film on this filter substrate.
Thin film transistor base plate and filter substrate are bonded together separately, between these two substrates, liquid crystal are set then and seal, to form LCD panel.
Need a plurality of mask process to form the pattern of thin film transistor base plate and filter substrate.Each mask process all comprises film deposition art, cleaning, photoetching process, etch process, photoresist stripping process and inspection process.When substrate when the useful area of employed exposure device is big in photoetching process, adopt and sew up (stitch) (subregion) exposure method.Sew up exposure method and comprise that substrate is carried out segmentation to expose.
Fig. 1 represents the stitching exposure method according to prior art.With reference to Fig. 1, substrate 20 has the film (metal level, insulation course, semiconductor layer etc., not shown) that is used to carry out composition and is formed on photoresist on this film.Expose by 10 pairs of photoresists of mask, the pattern with mask 10 in the exposure technology process forms the photoresist pattern accordingly.Because substrate 20 is bigger than mask 10, so repeated exposure technology to form the photoresist pattern shown in Fig. 1, is removed mask 10 simultaneously.The unit that adopts mask to carry out single exposure technology is called irradiation (shot), and will be called irradiation area with the exposure area of the corresponding substrate of once irradiating.For example, as shown in fig. 1, the photoresist pattern on the substrate 20 has 4 irradiation area A to D.In other words, each irradiation area A is exposed successively to the photoresist pattern of D, remove mask 10 simultaneously.
By exposure device each irradiation area is exposed, this exposure device scans along the vertical direction of substrate 20.Usually, the light intensity of this exposure device (luminous intensity) is high relatively and lower on a left side and/or the right side of irradiation area at the irradiation area center section.Exemplary relation between the position of the light intensity of exposure device and irradiation area has been shown among Fig. 1.In addition, also show among Fig. 1 between the left side and right side of irradiation area, light intensity reduces with different ratios.Left side and the light-intensity difference between the right side at irradiation area cause having different critical dimension CD at the pattern that forms on the left side with the pattern that forms on the right side, that is, and and pattern thickness and position deviation.Because there is the CD deviation between the pattern that is formed on the boundary between the adjacent irradiation area, sew up flaw (stitch stain) so in LCD panel, can produce.
For example, the pattern that is formed on the center section of irradiation area has the CD of P, and because the difference of exposure makes that be formed on each irradiation area A has the CD of P+2a to the pattern on the left of the D, and the pattern that is formed on its right side has the CD of P+a.Usually, the right side light intensity bigger than the left side light intensity pattern that can cause being formed on the irradiation area right side has bigger CD than the pattern that is formed on the irradiation area left side.Therefore, form adjacent irradiation area A to the borderline region the D, cause the CD deviation between the irradiation area by the left side pattern of the CD with P+2a and right side pattern with CD of P+a.In other words, it is adjacent one another are in the borderline region of D at irradiation area A to have the left side pattern of CD deviation ratio of 2a:a and a right side pattern.Because the CD deviation of irradiation area A in the borderline region between the D, and make in LCD panel, to produce and sew up flaw.
In order to address this problem, a kind of method has been proposed, wherein form a plurality of patterns on subregion ground, the both sides of mask, and these a plurality of pattern overlappings, in adjacent irradiation area, to make up, reduce the CD deviation thus.Yet,,, therefore have the problem of sewing up flaw so between the pattern on left side that is formed on mask and right side, there is the CD deviation because at the left side of exposure device and the light-intensity difference between the right side.
Summary of the invention
Therefore, the present invention is devoted to a kind of exposed mask and uses the exposure method of this exposed mask, and it has eliminated one or more problem that produces owing to the restriction of prior art and shortcoming basically.
The invention has the advantages that provides a kind of deviation of the luminous intensity aspect to exposure device to compensate, and prevents the exposed mask of the stitching flaw in the LCD panel thus.
Other features and advantages of the present invention will propose in the following description, and part is understood by instructions, perhaps can be experienced by practice of the present invention.Purpose of the present invention and other advantage will pass through the structure specifically noted of the instructions of writing and claim thereof and accompanying drawing realize and obtain.
In order to realize these and other advantage and according to purpose of the present invention, as concrete enforcement and broadly described, a kind of mask that is used to have the exposure device of left and right sides light intensity deviation, it comprises: substrate; Be positioned at the first middle pattern of this substrate; And second pattern and the 3rd pattern that lay respectively at the left side and the right side of this first pattern, wherein this first pattern and second pattern compensate the left and right sides light intensity deviation of exposure device.
In another aspect of this invention, a kind of employing has the regional exposure method of the mask of non-overlapped part and left lap and right lap, the pattern amount at wherein left lap and right lap place is different with the pattern amount of non-overlapped part, and this method comprises: the substrate with film is provided; On this film, form photoresist layer; On first irradiation area of this photoresist layer, mask is set; Light shine on this first irradiation area by mask; This mask is arranged in second irradiation area of photoresist layer, wherein this second irradiation area and this first irradiation area are overlapped, so that the right lap of mask is corresponding with the part of first irradiation area, this part of first irradiation area is corresponding with the left lap of mask; And by this mask with rayed on second irradiation area, and the pattern amount of wherein left lap and right lap differs from one another, so that left and right sides exposure intensity deviation is compensated.
In another aspect of this invention, a kind of regional exposure method of using mask, described mask has non-overlapped part, left lap and right lap, form pattern in the wherein said non-overlapped part with predetermined critical size, pattern amount in described left lap and the right lap reduces along the direction of the horizontal edge of described mask, and it is regional corresponding that described left lap and right lap and adjacent irradiation area overlap each other, and said method comprising the steps of: the substrate with film is provided; On described film, form photoresist layer, wherein described photoresist layer is divided at least the first irradiation area and second irradiation area; First illumination is mapped on described first irradiation area by described mask by exposure device; Described mask is arranged in described second irradiation area; Second illumination is mapped on described second irradiation area by described mask by exposure device; Wherein, described mask is formed have the critical dimension variations opposite with the light-intensity difference of exposure device; And pattern amount than the right lap of described mask, reduce the pattern amount of left lap with different ratios, because the critical dimension variations that the light intensity difference on the left side of described exposure device and right side causes, make the pattern that is formed on the pattern at the place, overlapping region between the adjacent irradiation area and is formed on the Non-overlapping Domain place have essentially identical critical dimension variations with compensation.
Should be appreciated that above-mentioned generality explanation and following detailed description are exemplary and indicative, aim to provide further explanation the present invention for required protection.
Description of drawings
Description of drawings embodiments of the invention and be used from explanation principle of the present invention with instructions one, comprise accompanying drawing providing, and it incorporated and constitutes into the part of instructions further understanding of the present invention.
In the accompanying drawings:
Fig. 1 represents the stitching exposure method according to prior art;
Fig. 2 represents the exposed mask according to first embodiment of the invention;
Fig. 3 represents to adopt the stitching exposure method of the exposed mask shown in Fig. 2;
Fig. 4 represents the stitching exposure method according to second embodiment of the invention; And
Fig. 5 represents the stitching exposure method according to third embodiment of the invention.
Embodiment
Now will describe embodiments of the invention in detail, its example is shown in the drawings.
Hereinafter, explain embodiments of the invention with reference to Fig. 2 to 5.Fig. 2 represents the mask 30 according to first embodiment of the invention.As shown in Figure 2, mask 30 is divided into three parts: non-overlapped part 32 wherein forms the pattern with predetermined C D; And left lap 34 and right lap 36, wherein the pattern amount reduces along the direction of the horizontal edge of mask 30.Can control the pattern amount at left lap 34 and right lap 36 places by area, size, thickness or the transmissivity of for example adjusting pattern, and the pattern amount is relevant with CD.It is regional corresponding that the left lap 34 of mask 30 and right lap 36 and adjacent irradiation area overlap each other.In addition, for the CD deviation that the light-intensity difference owing to the left side of exposure device and right side is caused compensates, compare with the pattern amount of right lap 36, the pattern amount of left lap 34 reduces with different ratios.
Usually, the light intensity on exposure device right side (luminous intensity) is greater than the light intensity in exposure device left side.Therefore, for this is compensated,, the pattern at left lap 34 places of mask 30 is formed the bigger CD of pattern that has than right lap 36 places according to the present invention.In other words, be formed on the left lap 34 of mask 30 and the pattern at right lap 36 places the left side of exposure device and the light-intensity difference on right side are compensated, this means, mask 30 is formed have the CD deviation opposite with the light-intensity difference of exposure device.
For example, the CD that has P when the pattern at non-overlapped part 32 places that are formed on mask 30, and when the pattern that is formed on left lap 34 and right lap 36 places has the CD of P-a and the CD of P-2a (wherein the direction of pattern amount from non-overlapped part 32 beginnings along the horizontal edge of mask 30 reduces) respectively, the relation between the exposure bias that can following qualification exposure device and the CD deviation of mask 30.The left side of exposure device and the exposure bias on right side are (P+2a): (P+a)=and 2a: a.The left lap 34 of mask 30 and the CD deviation of right lap 36 can be (P-a): (P-2a), (P): (P+2a) or (P+2a): (P+a), compensate with the exposure bias to exposure device.Because this CD deviation in the mask 30, and make gradient in the pattern amount at left lap 34 and right lap 36 places with respect to non-overlapped part 32 symmetries.
As shown in Figure 3, when in sewing up (or subregion) exposure method, adopting mask 30, mask 30 is exposed successively, to form irradiation area A to D.When irradiation area A is exposed, expose by 36 pairs of overlapping regions 44 of right lap of mask 30.When the second irradiation area B is exposed, expose by 34 pairs of overlapping regions 44 of left lap of mask 30.Therefore, the pattern that is formed on 44 places, overlapping region has essentially identical CD with the pattern that is formed on Non-overlapping Domain 42 places.
In addition, in the overlapping region 44 of D, left lap 34 and the CD deviation in the right lap 36 by mask 30 compensate the left side of exposure device and the light-intensity difference on right side, prevent the CD deviation between the irradiation area thus at each irradiation area A.Therefore, can reduce stitching flaw in the LCD panel that causes to the CD deviation in the overlapping region 44 of D owing to irradiation area A.
Fig. 4 represents the stitching exposure method according to second embodiment of the invention.Substrate 120 has film (metal level, dielectric film, semiconductor layer etc., not shown) and is formed on the photoresist that is used to carry out composition on this film.Photoresist on the substrate 120 is divided into four irradiation area A to D, and by using exposed mask (mask 10 for example shown in Figure 1) to expose.Control the exposure of each irradiation area A respectively, so that irradiation area A is compensated to the exposure bias at the borderline region place of D to D.
For example, as shown in Figure 4, when by having P+2a: when the exposure device of the left and right sides exposure bias of P+a exposes to the first irradiation area A, exposure device is controlled, so that have P+a: the left and right sides exposure bias of P-a for the second irradiation area B.For this reason, can control the film speed (being photoscanning speed) or the absolute luminous intensity of exposure device.Therefore, can reduce deviation between the left side exposure of the right side exposure of the first irradiation area A and the second irradiation area B.In addition, when the 3rd irradiation area C is exposed, exposure device is controlled, to have P-a: the left-right deviation of P-3a with method same as described above.In addition, when the 4th irradiation area D is exposed, exposure device is controlled, to have P-3a: the left-right deviation of P-5a.
In this way, in the stitching exposure method according to second embodiment of the invention, in the borderline region of D, it is identical with the right exposure bias of last irradiation area that the left exposure bias of next irradiation area becomes at first to fourth irradiation area A.Therefore, can reduce by first to fourth irradiation area A in the borderline region of D exposure bias and the CD deviation that causes makes stitching flaw in the LCD panel minimum or prevent to produce stitching flaw in the LCD panel thus.
Fig. 5 represents the stitching exposure method according to third embodiment of the invention.With reference to Fig. 5, mask 230 comprises: non-overlapped part 232 wherein forms the pattern with predetermined C D; And left lap 234 and right lap 236, wherein the pattern amount with reduce along the direction of the horizontal edge of mask 230 according to the described similar fashion of first embodiment.The left lap 234 of mask 230 is corresponding with overlapping areas adjacent one another are with right lap 236.
Successively each irradiation area A among Fig. 5 is exposed to D by mask 230.236 couples first to fourth irradiation area A expose to the overlapping region 244 of D by right lap, and in next irradiation process also the 234 pairs of overlapping regions 244 of left lap by mask 230 expose.Therefore, the pattern that is formed on 244 places, overlapping region has and the substantially the same CD of pattern that is formed on Non-overlapping Domain 242 places.
In addition, in the overlapping region 244 of D, to D, exposure device is controlled, so that the left exposure bias of next irradiation is identical with the right exposure bias of last irradiation for each irradiation area A at first to fourth irradiation area A.Therefore, can reduce owing to first to fourth irradiation area A to the CD deviation that the exposure bias in the overlapping region 244 of D causes, make the stitching flaw minimum in the LCD panel thus.
As mentioned above, be formed on according to the pattern at the left lap of mask of the present invention and right lap place light-intensity difference and compensate exposure device left side and right side, this means, mask formed have the CD deviation opposite, reduce thus or prevent stitching flaw in the LCD panel with exposure intensity difference.
In addition, according to stitching exposure method of the present invention,, make that it is identical with the right exposure bias of last irradiation area that the left exposure bias of next irradiation area becomes in the borderline region between irradiation area by the light distribution of control exposure device.Therefore, can reduce the CD deviation that causes owing to the exposure bias in the borderline region between the adjacent irradiation area, reduce thus or prevent stitching flaw in the LCD panel.
For the person of ordinary skill of the art, obviously can be under the situation that does not break away from the spirit or scope of the present invention modifications and variations of the present invention are.Therefore, the present invention is intended to contain these modifications and variations of the present invention in the scope that falls into claims and equivalent thereof.
The application requires the right of priority of the korean patent application No.P2003-99808 that submits in Korea S in the korean patent application No.P2003-99807 that submitted in Korea S on Dec 30th, 2003 and on Dec 30th, 2003, is incorporated herein by reference in its entirety.
Claims (3)
1. regional exposure method that adopts mask, described mask has non-overlapped part, left lap and right lap, form pattern in the wherein said non-overlapped part with predetermined critical size, pattern amount in described left lap and the right lap reduces along the direction of the horizontal edge of described mask, and it is regional corresponding that described left lap and right lap and adjacent irradiation area overlap each other, and said method comprising the steps of:
Substrate with film is provided;
On described film, form photoresist layer, wherein described photoresist layer is divided at least the first irradiation area and second irradiation area;
First illumination is mapped on described first irradiation area by described mask by exposure device;
Described mask is arranged in described second irradiation area;
Second illumination is mapped on described second irradiation area by described mask by exposure device;
Wherein, described mask is formed have the critical dimension variations opposite with the light-intensity difference of exposure device; And
Pattern amount than the right lap of described mask, reduce the pattern amount of left lap with different ratios, because the critical dimension variations that the light intensity difference on the left side of described exposure device and right side causes, make the pattern that is formed on the pattern at the place, overlapping region between the adjacent irradiation area and is formed on the Non-overlapping Domain place have essentially identical critical dimension variations with compensation.
2. according to the process of claim 1 wherein that sweep velocity or luminous intensity by controlling described exposure device regulate described second light intensity.
3. according to the process of claim 1 wherein that described second irradiation area and described first irradiation area overlap.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0099808 | 2003-12-30 | ||
| KR1020030099808 | 2003-12-30 | ||
| KR10-2003-0099807 | 2003-12-30 | ||
| KR1020030099808A KR101010400B1 (en) | 2003-12-30 | 2003-12-30 | Exposure Mask and Exposure Method Using The Same |
| KR1020030099807A KR101050312B1 (en) | 2003-12-30 | 2003-12-30 | Split exposure method |
| KR1020030099807 | 2003-12-30 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200410103651XA Division CN1637594B (en) | 2003-12-30 | 2004-12-30 | Exposure mask and exposure method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1979344A CN1979344A (en) | 2007-06-13 |
| CN1979344B true CN1979344B (en) | 2011-12-07 |
Family
ID=37260456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101714485A Expired - Fee Related CN1979344B (en) | 2003-12-30 | 2004-12-30 | Exposure method using exposure mask |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101050312B1 (en) |
| CN (1) | CN1979344B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106125517A (en) * | 2015-05-06 | 2016-11-16 | 三星显示有限公司 | Display base plate exposure method |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100759411B1 (en) * | 2006-06-07 | 2007-09-20 | 삼성에스디아이 주식회사 | Exposure method and method of manufacturing organic light emitting display using the same |
| CN102262324B (en) * | 2010-05-27 | 2014-06-25 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof, liquid crystal display panel and liquid crystal display |
| CN102954903B (en) * | 2011-08-22 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet |
| KR102312760B1 (en) * | 2013-12-06 | 2021-10-15 | 삼성디스플레이 주식회사 | Display device and method of manufacturing display device using the same |
| KR102233457B1 (en) | 2013-12-06 | 2021-03-30 | 삼성디스플레이 주식회사 | Display device and method of manufacturing display device using the same |
| CN104391431B (en) * | 2014-12-12 | 2016-06-29 | 合肥京东方光电科技有限公司 | Exposure imaging method and system, Exposure Control Module |
| KR102567319B1 (en) | 2016-04-28 | 2023-08-16 | 엘지디스플레이 주식회사 | Apparatus for divisional exposure and method of fabricating liquid crystal display device using thereof |
| KR102617140B1 (en) * | 2016-09-06 | 2023-12-27 | 삼성디스플레이 주식회사 | Exposure mask and exposure method of using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298761A (en) * | 1991-06-17 | 1994-03-29 | Nikon Corporation | Method and apparatus for exposure process |
| US5437946A (en) * | 1994-03-03 | 1995-08-01 | Nikon Precision Inc. | Multiple reticle stitching for scanning exposure system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990079742A (en) * | 1998-04-09 | 1999-11-05 | 오평희 | FT LCD Method of Manufacturing |
| JP2000180894A (en) * | 1998-12-18 | 2000-06-30 | Advanced Display Inc | Liquid crystal display device and its manufacture |
| KR100392054B1 (en) * | 2001-08-22 | 2003-07-22 | 병 호 이 | Method of fabricating a large-area holographic diffuser |
-
2003
- 2003-12-30 KR KR1020030099807A patent/KR101050312B1/en active IP Right Grant
-
2004
- 2004-12-30 CN CN2006101714485A patent/CN1979344B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298761A (en) * | 1991-06-17 | 1994-03-29 | Nikon Corporation | Method and apparatus for exposure process |
| US5437946A (en) * | 1994-03-03 | 1995-08-01 | Nikon Precision Inc. | Multiple reticle stitching for scanning exposure system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106125517A (en) * | 2015-05-06 | 2016-11-16 | 三星显示有限公司 | Display base plate exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101050312B1 (en) | 2011-07-19 |
| CN1979344A (en) | 2007-06-13 |
| KR20050070365A (en) | 2005-07-07 |
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