CN1979344B - An exposure method using an exposure mask - Google Patents

An exposure method using an exposure mask Download PDF

Info

Publication number
CN1979344B
CN1979344B CN 200610171448 CN200610171448A CN1979344B CN 1979344 B CN1979344 B CN 1979344B CN 200610171448 CN200610171448 CN 200610171448 CN 200610171448 A CN200610171448 A CN 200610171448A CN 1979344 B CN1979344 B CN 1979344B
Authority
CN
Grant status
Grant
Patent type
Prior art keywords
mask
exposure
left
overlapping portion
irradiation region
Prior art date
Application number
CN 200610171448
Other languages
Chinese (zh)
Other versions
CN1979344A (en )
Inventor
李树雄
白尚润
Original Assignee
乐金显示有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Abstract

本发明提供了一种使用曝光掩模的曝光方法。 The present invention provides an exposure method using an exposure mask. 一种采用掩模的分区曝光方法包括:提供具有薄膜的基板;在所述薄膜上形成光刻胶层,其中将所述光刻胶层分为至少第一照射区域和第二照射区域;由曝光装置通过所述掩模将第一光照射到所述第一照射区域上;将所述掩模设置在所述第二照射区域中;以及由曝光装置通过所述掩模将第二光照射到所述第二照射区域上,其中对所述第二照射区域的左侧进行曝光的第二光的强度与对所述第一照射区域的右侧进行曝光的第一光的强度基本相同,从而减小边界区域中的曝光偏差而导致的临界尺寸偏差,由此使液晶显示板中的缝合瑕疵最少。 One kind of partition using a mask exposure method comprising: providing a substrate having a thin film; forming a photoresist layer on the thin film, wherein the photoresist layer is divided into at least a first irradiation region and the second irradiation region; manufactured by the exposure apparatus by irradiating light to the first mask on the first irradiation region; the mask is disposed in the second irradiation region; and a second light illuminated through the mask by the exposure device to the second irradiation region, wherein said second pair of left irradiation region is exposed with a light intensity of a second light intensity of the first irradiation region to the right side of the first exposure is performed substantially the same, thereby reducing the exposure of the boundary region deviation caused by the critical dimension bias, whereby the liquid crystal display panel of a minimum of suture defects.

Description

使用曝光掩模的曝光方法 An exposure method using an exposure mask

[0001] 本申请是原案申请号为200410103651. X的发明专利申请(申请日:2004年12月30日,发明名称:曝光掩模和使用该曝光掩模的曝光方法)的分案申请。 Patent Application invention [0001] The present application is a continuation of application No. 200410103651. X original bill of (filing date: December 30, 2004, title of the invention: the exposure mask and exposure method using the exposure mask) is a divisional application.

技术领域 FIELD

[0002] 本发明涉及液晶显示板,更具体地,涉及一种对曝光装置(exposer)的光强偏差进行补偿的曝光掩模。 [0002] The present invention relates to a liquid crystal display panel, and more particularly, to a light intensity deviation of the exposure apparatus (exposer) compensating exposure mask.

背景技术 Background technique

[0003] 通常,液晶显示器件通过使用电场控制介电各向异性的液晶的光透射率来显示图像。 [0003] Generally, a liquid crystal display device displays an image by controlling an electric field using dielectric anisotropy of the liquid crystal light transmittance. 该液晶显示器件包括:液晶显示板,其具有以矩阵方式排列的用于显示图像的多个液晶单元;以及用于驱动该液晶显示板的驱动电路。 The liquid crystal display device comprising: a liquid crystal display panel having a plurality of liquid crystal cells arranged in a matrix for displaying an image; and for driving the liquid crystal display driving circuit board. 使用薄膜晶体管独立地驱动液晶单元的有源矩阵型液晶显示器被广泛用于电视机以及个人计算机的显示装置。 A thin film transistor liquid crystal cell independently driven active matrix liquid crystal displays are widely used in a display device of a television and a personal computer.

[0004] 该液晶显示板包括:彼此相对的薄膜晶体管基板和滤色器阵列基板;设置在这两个基板之间的液晶;以及用于保持基板之间的单元间隙的间隔物。 [0004] The liquid crystal display panel comprising: a thin film transistor array substrate and a color filter substrate opposed to each other; a liquid crystal disposed between the two substrates; and a spacer for maintaining a cell gap between the substrates.

[0005] 该薄膜晶体管基板包括:选通线和数据线;形成在选通线和数据线的交叉点附近的薄膜晶体管;在各个液晶单元处与薄膜晶体管相连的像素电极;以及形成在该薄膜晶体管基板上的配向膜。 [0005] The thin film transistor substrate comprising: a gate line and a data line; forming a thin film transistor vicinity of the intersection point of the gate and data lines; a pixel electrode in each liquid crystal cell at the thin film transistor is connected; and forming the film an alignment film transistor on the substrate.

[0006] 滤色器基板包括:与多个液晶单元相对应的多个滤色器;在这些滤色器之间用于反射外部光的黑底(black matrix);用于向多个液晶单元共同提供基准电压的公共电极; 以及形成在该滤色器基板上的配向膜。 [0006] The color filter substrate comprising: a plurality of liquid crystal cells corresponding to a plurality of color filters; the black matrix between the color filters for reflection of external light (black matrix); a plurality of liquid crystal cells a common reference voltage of the common electrode; and an alignment film is formed on the color filter substrate.

[0007] 将薄膜晶体管基板和滤色器基板相分离地接合在一起,然后在这两个基板之间设置液晶并进行密封,以形成液晶显示板。 [0007] The thin film transistor substrate and the color filter substrate are joined together separated, and then the liquid crystal is provided between the two substrates and sealed to form the liquid crystal display panel.

[0008] 需要多个掩模工艺来形成薄膜晶体管基板和滤色器基板的图案。 [0008] needs a plurality of mask patterning process to form a thin film transistor substrate and the color filter substrate. 每一个掩模工艺都包括薄膜淀积工艺、清洗工艺、光刻工艺、蚀刻工艺、光刻胶剥离工艺和检验工艺。 Each mask comprises a thin film deposition process process, a cleaning process, a photolithography process, an etching process, the photoresist strip process and inspection process. 当基板比在光刻工艺中所使用的曝光装置的有效面积大时,采用缝合(stitch)(分区)曝光方法。 When the substrate is larger than the effective area of ​​an exposure apparatus used in a lithographic process, using (partition) stitching exposure method (stitch). 缝合曝光方法包括对基板进行分段曝光。 Stitching exposure method comprising exposing substrate segment.

[0009] 图1表示根据现有技术的缝合曝光方法。 [0009] FIG. 1 shows a prior art method of stitching exposure. 参照图1,基板20具有用于进行构图的薄膜(金属层、绝缘层、半导体层等,未示出)以及形成在该薄膜上的光刻胶。 Referring to FIG 1, a substrate 20 having a thin film (a metal layer, an insulating layer, a semiconductor layer, etc., not shown) and forming a photoresist on the film for patterning. 通过掩模10 对光刻胶进行曝光,在曝光工艺过程中与掩模10的图案相对应地形成光刻胶图案。 Exposing the photoresist through a mask 10, in the exposure process of the pattern corresponding to mask 10 is formed a photoresist pattern. 因为基板20比掩模10大,所以重复曝光工艺,以形成图1中所示的光刻胶图案,同时去除掩模10。 Because the mask 20 to the substrate 10, so that repeated exposure process to form a photoresist pattern shown in FIG. 1, while the mask 10 is removed. 采用掩模进行一次曝光工艺的单位称为照射(shot),并且将与一次照射相对应的基板的曝光区域称为照射区域。 An exposure process using a mask called irradiation unit (shot), and with the one shot exposure area of ​​the substrate corresponding to the irradiation area is referred to. 例如,如图1中所示,基板20上的光刻胶图案具有4个照射区域A 到D。 For example, as shown in FIG. 1, a resist pattern on the substrate 20 has four irradiation areas A to D. 换句话说,对各个照射区域A到D的光刻胶图案依次进行曝光,同时去除掩模10。 In other words, the respective shot areas A to D are sequentially exposed resist pattern, while the mask 10 is removed.

[0010] 通过曝光装置对每个照射区域进行曝光,该曝光装置沿基板20的垂直方向进行扫描。 [0010] Each of the shot areas is exposed by an exposure apparatus, scanning exposure apparatus 20 in the vertical direction of the substrate. 通常,该曝光装置的光强(发光强度)在照射区域中间部分相对高而在照射区域的左和/或右侧较低。 Typically, the light intensity (light emission intensity) of the irradiation region in the exposure apparatus is relatively high and intermediate portions in the left region of the irradiation and / or lower right side. 图1中示出了曝光装置的光强与照射区域的位置之间的示例性关系。 FIG. 1 shows an exemplary relationship between the light intensity and the position of the irradiation area of ​​the exposure apparatus. 此外,图1中还示出了在照射区域的左侧和右侧之间,光强以不同的比率减小。 Further, FIG. 1 also shows a region between the left and right sides of the irradiation light intensity is reduced at different rates. 在照射区域的左侧和右侧之间的光强差异导致在左侧上形成的图案和在右侧上形成的图案具有不同的临界尺寸CD,即,图案厚度和位置偏差。 Light intensity difference between the left and right shot areas lead pattern formed on the left and right side pattern formed on the CD having different critical dimensions, i.e., thickness of the pattern and the positional deviation. 因为存在形成在相邻照射区域之间的边界处的图案之间的⑶偏差,所以在液晶显示板中会产生缝合瑕疵(stitch stain)。 Because there is formed adjacent ⑶ deviation between the pattern at the boundary between the illuminated region, the plate will produce blemishes suture (stitch stain) liquid crystal display.

[0011] 例如,形成在照射区域的中间部分的图案具有P的CD,而由于曝光的差异,使得形成在各个照射区域A到D左侧的图案具有P+加的CD,并且形成在其右侧的图案具有P+a的CD。 [0011] For example, is formed in the middle portion of the irradiation region having the pattern of the CD P, and since the exposure difference, such that the pattern in each of the irradiation regions A to the left of P + D is formed having added the CD, and is formed on the right side P + a pattern having a CD. 通常,比左侧光强大的右侧光强会导致形成在照射区域右侧的图案比形成在照射区域左侧的图案具有更大的⑶。 Typically, the right side than the left strong light intensity will lead pattern formed in the right side has a larger irradiation area than the pattern formed on the left ⑶ irradiation area. 因此,由具有P+加的⑶的左侧图案和具有P+a的⑶的右侧图案形成相邻照射区域A到D之间的边界区域,导致照射区域之间的CD偏差。 Thus, the pattern has a left plus P + P + ⑶ and having a pattern of the right ⑶ formed adjacent to the boundary area A irradiated region between D, resulting in CD variation between the irradiated regions. 换句话说, 具有加:a的⑶偏差比的左侧图案和右侧图案在照射区域A到D的边界区域中彼此相邻。 In other words, with additive: a boundary region of a deviation in a ratio ⑶ left pattern and a right pattern in the irradiated regions A to D adjacent to each other. 由于照射区域A到D之间的边界区域中的CD偏差,而使得在液晶显示板中产生缝合瑕疵。 To the irradiation regions A CD variation in the boundary region between the D, such that the suture defects generated in the liquid crystal display panel.

[0012] 为了解决该问题,提出了一种方法,其中在掩模的两侧分区地形成多个图案,并且该多个图案重叠,以在相邻照射区域中进行组合,由此减少CD偏差。 [0012] In order to solve this problem, a method is proposed, in which a plurality of mask patterns on both sides of the partition, and the plurality of superimposed patterns, the irradiation to be combined in an adjacent region, thereby reducing the variation CD . 然而,因为在曝光装置的左侧和右侧之间的光强差异,所以在形成在掩模的左侧和右侧的图案之间存在CD偏差, 因此存在缝合瑕疵的问题。 However, since the light intensity difference between the left and right sides of the exposure apparatus, there is a deviation in the CD between patterns formed on left and right sides of the mask, there is a problem of suture defects.

发明内容 SUMMARY

[0013] 因此,本发明致力于一种曝光掩模和使用该曝光掩模的曝光方法,其基本上消除了由于现有技术的限制和缺点而产生的一个或更多个问题。 [0013] Accordingly, the present invention is directed to an exposure method using an exposure mask and the exposure mask which substantially obviate one or more problems due to limitations and disadvantages of the prior art is generated.

[0014] 本发明的优点在于提供一种对曝光装置的发光强度方面的偏差进行补偿,由此防止液晶显示板中的缝合瑕疵的曝光掩模。 [0014] The advantage of the invention is to provide a variation in light emission intensity of the exposure device can be compensated, thereby preventing exposure of the liquid crystal display mask plate suture defects.

[0015] 本发明的其它特征和优点将在下面的说明书中提出,部分通过说明书而明了,或者可以通过本发明的实践而体验到。 [0015] Other features and advantages of the invention will be set forth in the following description and in part from the description and clear, or may be experienced by the practice of the invention. 本发明的目的和其它优点将通过所写说明书及其权利要求以及附图所具体指出的结构来实现和获得。 The objectives and other advantages of the invention will be realized and attained by the written description and claims as well as the structure particularly pointed out in the drawings.

[0016] 为了实现这些和其它优点并根据本发明的目的,正如具体实施和广泛描述的那样,一种用于具有左右光强偏差的曝光装置的掩模,其包括:基板;位于该基板中间的第一图案;以及分别位于该第一图案的左侧和右侧的第二图案和第三图案,其中该第一图案和第二图案对曝光装置的左右光强偏差进行补偿。 [0016] To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, one kind of mask exposure apparatus having a light intensity deviation for the left and right, comprising: a substrate; the substrate in the middle a first pattern; respectively, and left and right sides of the first pattern of the second pattern and the third pattern, wherein the first and second patterns of light intensity about the exposure apparatus compensate for the variation.

[0017] 在本发明的另一方面,一种采用具有非重叠部分以及左重叠部分和右重叠部分的掩模的分区曝光方法,其中左重叠部分和右重叠部分处的图案量与非重叠部分的图案量不同,该方法包括:提供具有薄膜的基板;在该薄膜上形成光刻胶层;在该光刻胶层的第一照射区域上设置掩模;通过掩模将光照射到该第一照射区域上;将该掩模设置在光刻胶层的第二照射区域中,其中该第二照射区域与该第一照射区域部分重叠,以使掩模的右重叠部分与第一照射区域的一部分相对应,第一照射区域的该部分与掩模的左重叠部分相对应; 以及通过该掩模将光照射在第二照射区域上,并且其中左重叠部分和右重叠部分的图案量彼此不同,以对左右曝光强度偏差进行补偿。 [0017] In another aspect of the present invention, an exposure method using a partition having a non-overlapping portion and the overlapping portion of the left and the right overlapping portion of the mask, wherein the pattern of the left and right overlapping portion and the overlapping portion of the non-overlapping portion different amounts of a pattern, the method comprising: providing a substrate having a thin film; forming a photoresist layer on the thin film; a mask disposed on the irradiation region of the first photoresist layer; by irradiating light to the first mask the shot area; the second mask is provided on the irradiation areas of the photoresist layer, wherein the second irradiation region overlapping with the first irradiation region portion, so that the right portion of the mask overlapping with the first irradiation region a portion corresponding to the overlapping portion of the left portion of the mask corresponding to the first irradiation region; and a mask through which light is irradiated on a second irradiation region, and wherein the left and right overlapping portion and the overlapping portion of the pattern of the amount of each other varied to compensate for variations in strength of about exposure.

[0018] 在本发明的另一方面,一种使用掩模的分区曝光方法,所述掩模具有非重叠部分、 左重叠部分和右重叠部分,其中所述非重叠部分中形成具有预定临界尺寸的图案,所述左重叠部分和右重叠部分中的图案量沿所述掩模的水平边缘的方向减少,并且所述左重叠部分和右重叠部分与相邻照射区域彼此重叠的区域相对应,所述方法包括以下步骤:提供具有薄膜的基板;在所述薄膜上形成光刻胶层,其中将所述光刻胶层分为至少第一照射区域和第二照射区域;由曝光装置通过所述掩模将第一光照射到所述第一照射区域上;将所述掩模设置在所述第二照射区域中;由曝光装置通过所述掩模将第二光照射到所述第二照射区域上;其中,将所述掩模形成为具有与曝光装置的光强差异相反的临界尺寸偏差;并且相比于所述掩模的右重叠部分的图案量,以不同 [0018] In another aspect of the present invention, an exposure method using a mask partitioning, the mask having a non-overlapping portion, the overlapping portion of the left and right overlapping portion, wherein the predetermined critical size are formed having the non-overlapping portion pattern, the left direction of reducing the amount of pattern overlapping portion and the overlapping portion of the right along the horizontal edges of the mask, and the areas overlap each other and the right overlapping portion overlaps the left portion corresponding to the adjacent shot areas, said method comprising the steps of: providing a substrate having a thin film; forming a photoresist layer on the thin film, wherein the photoresist layer is divided into at least a first irradiation region and the second irradiation region; by the exposure device by the irradiating light of said first mask on the first irradiation region; the mask is disposed in the second irradiation region; the second through the mask by the exposure light is irradiated onto said second means the irradiation region; wherein the mask is formed to have a light intensity difference in the exposure apparatus opposite to the critical dimension bias; amount as compared to the right overlapping portion of the pattern of the mask, different 比率减少左重叠部分的图案量,以补偿由于所述曝光装置的左侧和右侧的光强差而导致的临界尺寸偏差,使得形成在相邻照射区域之间的重叠区域处的图案与形成在非重叠区域处的图案具有基本相同的临界尺寸偏差。 Reducing the ratio of the amount of the overlapping portion of the pattern left to compensate for critical dimension variations of light intensity difference between the left and right sides of the exposure apparatus caused, so that a pattern is formed in the overlapping area between the adjacent irradiated regions having substantially the same critical dimension variation in the pattern of the non-overlapping regions.

[0019] 应当理解,上述的一般性说明和以下的详细说明是示例性和解释性的,旨在提供对所要求保护的本发明的进一步解释。 [0019] It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

附图说明 BRIEF DESCRIPTION

[0020] 附图说明了本发明的实施例并与说明书一起用于说明本发明的原理,包含附图以提供对本发明的进一步理解,并且将其并入并构成说明书的一部分。 [0020] The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention, comprising a reference to provide a further understanding of the invention and are incorporated in and which constitute a part of this specification.

[0021] 在附图中: [0021] In the drawings:

[0022] 图1表示根据现有技术的缝合曝光方法; [0022] FIG. 1 shows a prior art method of stitching exposure;

[0023] 图2表示根据本发明第一实施例的曝光掩模; [0023] FIG. 2 shows an embodiment of the exposure mask according to a first embodiment of the present invention;

[0024] 图3表示采用图2中所示的曝光掩模的缝合曝光方法; [0024] FIG. 3 shows a stitching exposure method using an exposure mask shown in FIG 2;

[0025] 图4表示根据本发明第二实施例的缝合曝光方法;以及 [0025] FIG. 4 shows a stitching exposure method according to a second embodiment of the present invention; and

[0026] 图5表示根据本发明第三实施例的缝合曝光方法。 [0026] FIG. 5 shows a stitching exposure method according to a third embodiment of the present invention.

具体实施方式 Detailed ways

[0027] 现将详细说明本发明的实施例,其示例在附图中示出。 [0027] Example embodiments will now be described in detail the present invention, which are illustrated in the accompanying drawings.

[0028] 下文中,将参照图2到5详细地说明本发明的实施例。 In [0028] Hereinafter, with reference to FIGS. 2-5 embodiment of the present invention are described in detail. 图2表示根据本发明第一实施例的掩模30。 2 shows a mask 30 according to an embodiment of the first embodiment of the present invention. 如图2中所示,将掩模30分为三个部分:非重叠部分32,其中形成具有预定CD的图案;以及左重叠部分34和右重叠部分36,其中图案量沿掩模30的水平边缘的方向减少。 As illustrated, the mask 30 is divided into three parts 2: non-overlapping portion 32, wherein the pattern is formed having a predetermined CD; horizontal overlap portion 34 and the left and right overlapping portions 36, wherein the amount of the pattern of the mask 30 along the decreasing direction edge. 可以通过例如调整图案的面积、尺寸、厚度或透射率来控制左重叠部分34和右重叠部分36处的图案量,并且图案量与⑶相关。 It can be controlled by adjusting the area of ​​the pattern, size, thickness or transmittance e.g. left section 34 the amount of overlapping patterns 36 and right overlapping portion, and the pattern associated with the amount ⑶. 掩模30的左重叠部分34和右重叠部分36与相邻照射区域彼此重叠的区域相对应。 The mask portion 30 overlapping the left and right overlapping portions 36 and 34 correspond to the adjacent regions overlap each other irradiated regions. 此外,为了对由于曝光装置的左侧和右侧的光强差异而导致的CD偏差进行补偿,与右重叠部分36的图案量相比较,左重叠部分34的图案量以不同的比率减少。 Further, in order for the CD variations due to the difference in light intensity of the left and right sides of an exposure device caused by compensating, with the right amount of overlapping patterns comparing portion 36, a left portion 34 of the overlapping patterns to reduce the amount of different ratios.

[0029] 通常,曝光装置右侧的光强(发光强度)大于曝光装置左侧的光强。 [0029] Generally, light intensity to the right of the exposure device (light emission intensity) of light intensity is greater than the left side of the exposure apparatus. 因此,为了对此进行补偿,根据本发明,将掩模30的左重叠部分34处的图案形成为具有比右重叠部分36 处的图案更大的CD。 Accordingly, in order to compensate for this, according to the present invention, the mask pattern 34 at the left portion 30 is formed to have a larger overlap pattern at the overlap portion 36 CD than the right. 换句话说,形成在掩模30的左重叠部分34和右重叠部分36处的图案对曝光装置的左侧和右侧的光强差异进行补偿,这意味着,将掩模30形成为具有与曝光装置的光强差异相反的CD偏差。 In other words, the pattern portion 3436 is formed at the overlapping portion in the right and left mask 30 overlaps on the light intensity difference in the left and right of the exposure device can be compensated, which means, the mask 30 is formed to have a the difference in intensity exposure apparatus opposite to the CD variation.

[0030] 例如,当形成在掩模30的非重叠部分32处的图案具有P的⑶,并且形成在左重叠部分34和右重叠部分36处的图案分别具有Ρ-a的⑶和P-加的⑶(其中图案量从非重叠部分32开始沿掩模30的水平边缘的方向减少)时,可以如下限定曝光装置的曝光偏差 [0030] For example, when P is formed in the mask ⑶ having non-overlapping portions 30 of the pattern 32, and a pattern forming portion 34 ⑶ 36 and right overlapping portion overlapped each having left and P- Ρ-a plus when ⑶ (pattern wherein the amount of the non-overlapping portion 32 starts from the direction of the horizontal edge mask 30 decrease), the deviation can be defined as an exposure apparatus exposure

5和掩模30的CD偏差之间的关系。 5 and the relationship between the mask 30 of CD variation. 曝光装置的左侧和右侧的曝光偏差为(P+2a) : (P+a) =2a : a0掩模30的左重叠部分34和右重叠部分36的CD偏差可以为(P_a) : (P-2a)、 (P) : (P+2a)或(P+2a) : (P+a),以对曝光装置的曝光偏差进行补偿。 Exposure of the left and right deviations of the exposure apparatus (P + 2a): (P + a) = 2a: a0 mask 30 left and right overlapping portions 34 of the overlapping portions 36 may be a CD variation (P_a): ( P-2a), (P): (P + 2a) or (P + 2a): (P + a), the deviation of the exposure apparatus to expose compensate. 由于掩模30中的这种⑶偏差,而使得在左重叠部分34和右重叠部分36处的图案量的梯度相对于非重叠部分32对称。 Because of this the mask 30 ⑶ deviation amount of the pattern such that overlapping portions 34 and 36 of the left and right overlapping portions in the gradient portion 32 is symmetrical with respect to non-overlapping.

[0031] 如图3中所示,当在缝合(或分区)曝光方法中采用掩模30时,对掩模30依次进行曝光,以形成照射区域A到D。 As shown in FIG. 3 [0031], when the suture 30 using a mask (or partition) exposure method, the mask 30 is exposed sequentially to form the irradiation regions A to D. 当对照射区域A进行曝光时,通过掩模30的右重叠部分36对重叠区域44进行曝光。 When exposed shot areas A, 44 is exposed through a mask 30 right overlapping portion 36 overlapping region. 当对第二照射区域B进行曝光时,通过掩模30的左重叠部分34对重叠区域44进行曝光。 When the irradiation region B of the second exposure, the mask 44 is exposed through the left overlapping portion 30 overlapping region 34 pairs. 因此,形成在重叠区域44处的图案与形成在非重叠区域42处的图案具有基本相同的CD。 Thus, the pattern 44 is formed in the region overlaps with the pattern at the non-overlapping area 42 has substantially the same CD.

[0032] 此外,在各个照射区域A到D的重叠区域44中,通过掩模30的左重叠部分34和右重叠部分36中的CD偏差对曝光装置的左侧和右侧的光强差异进行补偿,由此防止照射区域之间的⑶偏差。 [0032] Further, in the overlapping area D 44 A to the respective shot areas, portions 34 and 36 in the CD variation right overlapping portion of the light intensity difference in the left and right sides of an exposure apparatus through a mask 30 overlaps the left compensation, thereby preventing the deviation between the irradiation region ⑶. 因此,可以减少由于照射区域A到D的重叠区域44中的⑶偏差而导致的液晶显示板中的缝合瑕疵。 Thus, the liquid crystal can be reduced due to the irradiation regions A to D of the overlapping area 44 ⑶ deviation caused by defective display stapling plate.

[0033] 图4表示根据本发明第二实施例的缝合曝光方法。 [0033] FIG. 4 shows a stitching exposure method according to a second embodiment of the present invention. 基板120具有薄膜(金属层、 绝缘膜、半导体层等,未示出)以及形成在该薄膜上用于进行构图的光刻胶。 Substrate 120 having a thin film (a metal layer, an insulating film, a semiconductor layer and the like, not shown) and forming a photoresist on the film for patterning. 将基板120上的光刻胶分为四个照射区域A到D,并通过使用曝光掩模(例如图1所示的掩模10)进行曝光。 The photoresist on the substrate 120 is divided into four shot areas A to D, and exposed by using an exposure mask (e.g. the mask shown in FIG. 10). 分别控制各个照射区域A到D的曝光,以对照射区域A到D的边界区域处的曝光偏差进行补偿。 Control the respective exposure shot areas A to D to A to the exposure shot areas on the deviation at the boundary region D to compensate.

[0034] 例如,如图4中所示,当通过具有P+加:P+a的左右曝光偏差的曝光装置对第一照射区域A进行曝光时,对曝光装置进行控制,以使得对于第二照射区域B具有P+a : Pa 的左右曝光偏差。 [0034] For example, as shown in Figure 4, when added by having a + P: P + about when a deviation of an exposure apparatus for exposing the first irradiation region A is exposed to the exposure device is controlled, so that the second irradiation for area B having a P + a: Pa about the exposure bias. 为此,可以对曝光装置的曝光速度(即光扫描速度)或绝对发光强度进行控制。 For this purpose, the exposure speed can be controlled (i.e., the optical scanning speed), or the absolute intensity of the exposure light emitting device. 因此,可以减小第一照射区域A的右侧曝光和第二照射区域B的左侧曝光之间的偏差。 Thus, it is possible to reduce a deviation between the left-right first irradiation exposure area A and area B of the second irradiation exposure. 此外,当对第三照射区域C进行曝光时,以与上述相同的方法对曝光装置进行控制, 以具有Pa : P_3a的左右偏差。 Further, when the irradiation of the third region C exposed, the exposure apparatus to control the same manner as described above, to have a Pa: the deviation around P_3a. 此外,当对第四照射区域D进行曝光时,对曝光装置进行控制,以具有P_3a : P-^i的左右偏差。 Further, when the fourth irradiation region D is exposed, the exposure apparatus is controlled to have P_3a: deviation around the P- ^ i.

[0035] 通过这种方式,在根据本发明第二实施例的缝合曝光方法中,在第一至第四照射区域A到D的边界区域中,下一照射区域的左曝光偏差变得与前一照射区域的右曝光偏差相同。 [0035] In this manner, the stitching exposure method according to a second embodiment of the present invention, in the first to fourth irradiation areas A to D of the boundary region, the left next irradiation region becomes the deviation before exposure an irradiation region of the right exposure bias same. 因此,可以减小由第一至第四照射区域A到D的边界区域中的曝光偏差而导致的⑶ 偏差,由此使液晶显示板中的缝合瑕疵最小或者防止产生液晶显示板中的缝合瑕疵。 Thus, the boundary region can be reduced exposure bias the first to fourth shot areas A to D in ⑶ deviation caused, whereby the liquid crystal display panel of the minimum stitching defects or defects prevent the suture produced liquid crystal display panel .

[0036] 图5表示根据本发明第三实施例的缝合曝光方法。 [0036] FIG. 5 shows a stitching exposure method according to a third embodiment of the present invention. 参照图5,掩模230包括:非重叠部分232,其中形成具有预定⑶的图案;以及左重叠部分234和右重叠部分236,其中图案量以与根据第一实施例所述的类似方式沿掩模230的水平边缘的方向减少。 Referring to FIG 5, a mask 230 comprising: a non-overlapping portion 232, which is formed having a predetermined pattern ⑶; and the left and right overlapping portion 234 overlapping portion 236, wherein an amount of the pattern along with the mask according to a similar manner as described in the first embodiment decreasing direction of the horizontal edge 230 of the mold. 掩模230的左重叠部分234和右重叠部分236与彼此相邻重叠的区域相对应。 The mask 230 and the left overlapping portion 234 overlapping regions adjacent to each other right overlapping portion 236, respectively.

[0037] 通过掩模230依次对图5中的各个照射区域A到D进行曝光。 [0037] FIG. 5 sequentially for each shot areas A to D is exposed through the mask 230. 通过右重叠部分236对第一至第四照射区域A到D的重叠区域244进行曝光,并且在下一照射工艺中还通过掩模230的左重叠部分234对重叠区域244进行曝光。 Overlapping area overlapping portion 236 first to fourth irradiation region A through the right exposure to D 244, and the next process is irradiated through the mask 230 overlaps the left portion 234 of the overlapping region 244 is exposed. 因此,形成在重叠区域244处的图案具有与形成在非重叠区域242处的图案基本上相同的CD。 Thus, the pattern formed in the region 242 is formed in a non-overlapping pattern substantially the same as a CD having the overlap region 244.

[0038] 此外,在第一至第四照射区域A到D的重叠区域244中,对于各个照射区域A到D,对曝光装置进行控制,以使下一照射的左曝光偏差与前一照射的右曝光偏差相同。 [0038] Further, in the first to fourth irradiation areas A to 244 D in the overlap region, for each of the irradiation regions A to D, the exposure control means, so that the next irradiation exposure bias left before the irradiation with a Right same exposure bias. 因此,可以减小由于第一至第四照射区域A到D的重叠区域244中的曝光偏差而导致的CD偏差,由此使液晶显示板中的缝合瑕疵最小。 Accordingly, the exposure can be reduced CD bias due to deviation of the first to fourth irradiation areas A to D overlap region 244 caused, whereby the liquid crystal display panel of a minimum suture defects.

[0039] 如上所述,形成在根据本发明的掩模的左重叠部分和右重叠部分处的图案对曝光装置左侧和右侧的光强差异进行补偿,这意味着,将掩模形成为具有与曝光强度差异相反的CD偏差,由此减小或防止液晶显示板中的缝合瑕疵。 [0039] As described above, are formed in the light intensity to compensate for the difference between the left and right of the exposure device according to a pattern portion of the mask overlaps the left and right of the present invention at the overlapping portion, which means that the mask is formed as having opposite exposure intensity difference CD bias, thereby reducing or preventing the liquid crystal display panel of suture defects.

[0040] 此外,根据本发明的缝合曝光方法,通过控制曝光装置的光强分布,使得在照射区域之间的边界区域中,下一照射区域的左曝光偏差变得与前一照射区域的右曝光偏差相同。 [0040] Further, according to the present invention stitching exposure method, by controlling the intensity distribution of the exposure apparatus, so that the boundary region between the irradiation region, the left next exposure shot areas in the right and the deviation becomes a front irradiation area same exposure bias. 因此,可以减小由于相邻照射区域之间的边界区域中的曝光偏差而导致的CD偏差,由此减少或防止液晶显示板中的缝合瑕疵。 Accordingly, the exposure can be reduced CD bias due to variation in the boundary region between adjacent irradiated region caused, thereby reducing or preventing the liquid crystal display panel of suture defects.

[0041] 对于本领域的普通技术人员来说,显然可以在不脱离本发明的精神或范围的情况下对本发明进行各种修改和变化。 [0041] those of ordinary skill in the art, it will be apparent that various modifications and variations of the present invention without departing from the spirit or scope of the invention. 因此,本发明旨在涵盖落入所附权利要求及其等同物的范围内的本发明的这些修改和变化。 Accordingly, the present invention is intended to embrace the appended claims and their equivalents such modifications and variations of the present invention within the scope of the.

[0042] 本申请要求2003年12月30日在韩国提交的韩国专利申请No. P2003-99807和2003年12月30日在韩国提交的韩国专利申请NO.P2003-99808的优先权,在此通过引用并入其全部内容。 [0042] This application claims priority to Korean Patent Application No. 2003, filed in Korea on December 30 P2003-99807 patent in Korea and South Korea filed December 30, 2003 filed NO.P2003-99808 in this by which is fully incorporated by reference.

Claims (3)

  1. 1. 一种采用掩模的分区曝光方法,所述掩模具有非重叠部分、左重叠部分和右重叠部分,其中所述非重叠部分中形成具有预定临界尺寸的图案,所述左重叠部分和右重叠部分中的图案量沿所述掩模的水平边缘的方向减少,并且所述左重叠部分和右重叠部分与相邻照射区域彼此重叠的区域相对应,所述方法包括以下步骤:提供具有薄膜的基板;在所述薄膜上形成光刻胶层,其中将所述光刻胶层分为至少第一照射区域和第二照射区域;由曝光装置通过所述掩模将第一光照射到所述第一照射区域上;将所述掩模设置在所述第二照射区域中;由曝光装置通过所述掩模将第二光照射到所述第二照射区域上;其中,将所述掩模形成为具有与曝光装置的光强差异相反的临界尺寸偏差;并且相比于所述掩模的右重叠部分的图案量,以不同的比率减少左重叠部分的图 An exposure method using a mask partitioning, the mask having a non-overlapping portion, the overlapping portion of the left and right overlapping portion, wherein the predetermined pattern has a critical dimension of the non-overlapping portion is formed, and the left overlapping portion the right to reduce the amount of pattern overlapping portion in a direction along the horizontal edge mask, and the overlapping portion of the left and right overlapping portions of the adjacent irradiation regions overlap each other corresponds, said method comprising the steps of: providing a a substrate film; forming a photoresist layer on the thin film, wherein the photoresist layer is divided into at least a first irradiation region and the second irradiation region; through the mask by the exposure light is irradiated to the first apparatus said first irradiation region; the second mask is provided on the illuminated area; through the mask by the exposure apparatus of the second illumination light is irradiated on the second region; wherein the mask is formed to have a difference in the light intensity of the exposure apparatus opposite to the critical dimension bias; amount as compared to the right overlapping portion of the pattern of the mask, at different rates to reduce the overlapping portion of the left in FIG. 量,以补偿由于所述曝光装置的左侧和右侧的光强差而导致的临界尺寸偏差,使得形成在相邻照射区域之间的重叠区域处的图案与形成在非重叠区域处的图案具有基本相同的临界尺寸偏差。 Amount to compensate for critical dimension variations of light intensity difference between the left and right sides of the exposure apparatus caused, so that the adjacent patterns are formed at the overlapping area between the area irradiated with a pattern formed at a non-overlapping region having substantially the same critical dimension bias.
  2. 2.根据权利要求1的方法,其中通过控制所述曝光装置的扫描速度或发光强度来调节所述第二光的强度。 2. The method according to claim 1, wherein the intensity of the second light is adjusted by controlling the emission intensity or the scanning speed of the exposure device.
  3. 3.根据权利要求1的方法,其中所述第二照射区域与所述第一照射区域部分重叠。 3. The method according to claim 1, wherein the second irradiation region overlaps with the first portion of the irradiation region.
CN 200610171448 2003-12-30 2004-12-30 An exposure method using an exposure mask CN1979344B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR20030099807A KR101050312B1 (en) 2003-12-30 2003-12-30 Division exposure method
KR10-2003-0099807 2003-12-30
KR10-2003-0099808 2003-12-30
KR20030099808A KR101010400B1 (en) 2003-12-30 2003-12-30 Exposure Mask and Exposure Method Using The Same
CN200410103651.X2004.12.30 2004-12-30

Publications (2)

Publication Number Publication Date
CN1979344A true CN1979344A (en) 2007-06-13
CN1979344B true CN1979344B (en) 2011-12-07

Family

ID=37260456

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200610171448 CN1979344B (en) 2003-12-30 2004-12-30 An exposure method using an exposure mask

Country Status (2)

Country Link
KR (1) KR101050312B1 (en)
CN (1) CN1979344B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100759411B1 (en) * 2006-06-07 2007-09-20 삼성에스디아이 주식회사 Exposure method and method of manufacturing organic light emitting display using the same
CN102262324B (en) * 2010-05-27 2014-06-25 北京京东方光电科技有限公司 Array substrate and manufacturing method thereof, liquid crystal display panel and liquid crystal display
CN102954903B (en) * 2011-08-22 2015-02-04 上海华虹宏力半导体制造有限公司 Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet
KR20150066058A (en) 2013-12-06 2015-06-16 삼성디스플레이 주식회사 Display device and method of manufacturing display device using the same
CN104391431B (en) * 2014-12-12 2016-06-29 合肥京东方光电科技有限公司 Exposing and developing the method and system, exposure control system
KR20170123141A (en) * 2016-04-28 2017-11-07 엘지디스플레이 주식회사 Apparatus for divisional exposure and method of fabricating liquid crystal display device using thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298761A (en) 1991-06-17 1994-03-29 Nikon Corporation Method and apparatus for exposure process
US5437946A (en) 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000180894A (en) * 1998-12-18 2000-06-30 Advanced Display Inc Liquid crystal display device and its manufacture
KR100392054B1 (en) * 2001-08-22 2003-07-22 병 호 이 Method of fabricating a large-area holographic diffuser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298761A (en) 1991-06-17 1994-03-29 Nikon Corporation Method and apparatus for exposure process
US5437946A (en) 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system

Also Published As

Publication number Publication date Type
KR20050070365A (en) 2005-07-07 application
CN1979344A (en) 2007-06-13 application
KR101050312B1 (en) 2011-07-19 grant

Similar Documents

Publication Publication Date Title
US7136140B1 (en) Liquid crystal display comprising a linear protrusion structure and an auxilliary protrusion structure having a width wider than that of the linear protrusion structure for controlling an alignment of liquid crystal
US5477355A (en) Process for producing the passivation layer of an active matrix substrate by back exposure
US20040263771A1 (en) Method of fabricating liquid crystal display device
US5760861A (en) Liquid crystal display device and a method for fabricating black matrix thereto
US5801802A (en) Liquid crystal display panel with two alignment domains
US6822701B1 (en) Liquid crystal display apparatus
US20010049064A1 (en) Photo mask for fabricating a thin film transistor liquid crystal display
US6304308B1 (en) Liquid crystal display device with optical shield film
US6146796A (en) Liquid crystal display and a manufacturing method thereof
US20060232728A1 (en) Liquid crystal display and fabricating method thereof
JPH11153809A (en) Photomask and production of active element array substrate
JPH10148847A (en) Substrate for liquid crystal panel and liquid crystal panel using the same and projection type display device
JPH09230124A (en) Color filter
US20030156236A1 (en) Liquid crystal display device and color filter substrate thereof
JP2000066235A (en) Liquid crystal display device and its production
US20070002246A1 (en) Liquid crystal display device having common electrodes with reduced resistance and method for fabricating the same
US20040252266A1 (en) Liquid crystal display device
JPH06324474A (en) Photomask and exposing method
US20110049519A1 (en) Thin Film Transistor Array Panel and Method of Manufacturing the Same
US6567135B1 (en) Liquid crystal display device and method for fabricating the same
JPH11212075A (en) Manufacture of liquid crystal display device
US6291136B1 (en) Method of manufacturing a liquid crystal display
US6157433A (en) Method of manufacturing liquid-crystal display device having a plurality of divided regions
JP2005258290A (en) Electrooptical apparatus and method for manufacturing the same, and electronic equipment
US5859690A (en) Method of dividing and exposing patterns

Legal Events

Date Code Title Description
C06 Publication
C10 Request of examination as to substance
C14 Granted