CN1979341A - 一种紫外固化纳米压印模版的制备方法 - Google Patents
一种紫外固化纳米压印模版的制备方法 Download PDFInfo
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- CN1979341A CN1979341A CN 200510130437 CN200510130437A CN1979341A CN 1979341 A CN1979341 A CN 1979341A CN 200510130437 CN200510130437 CN 200510130437 CN 200510130437 A CN200510130437 A CN 200510130437A CN 1979341 A CN1979341 A CN 1979341A
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CNB2005101304378A CN100437361C (zh) | 2005-12-08 | 2005-12-08 | 一种紫外固化纳米压印模版的制备方法 |
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CNB2005101304378A CN100437361C (zh) | 2005-12-08 | 2005-12-08 | 一种紫外固化纳米压印模版的制备方法 |
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CN1979341A true CN1979341A (zh) | 2007-06-13 |
CN100437361C CN100437361C (zh) | 2008-11-26 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101135842B (zh) * | 2007-10-25 | 2011-11-02 | 复旦大学 | 一种复制纳米压印模板的方法 |
CN105303222A (zh) * | 2015-11-12 | 2016-02-03 | 南京大学 | 一种激光成像防伪标签及其制备方法 |
CN106842825A (zh) * | 2017-03-21 | 2017-06-13 | 京东方科技集团股份有限公司 | 母模及其制造方法 |
WO2019056586A1 (zh) * | 2017-09-20 | 2019-03-28 | 南方科技大学 | 一种制备光学超构表面的方法 |
CN112394449A (zh) * | 2020-11-17 | 2021-02-23 | 深圳珑璟光电科技有限公司 | 一种超构表面耦合元件的制作方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6680214B1 (en) * | 1998-06-08 | 2004-01-20 | Borealis Technical Limited | Artificial band gap |
US6759180B2 (en) * | 2002-04-23 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography |
US6916511B2 (en) * | 2002-10-24 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | Method of hardening a nano-imprinting stamp |
CN1562731A (zh) * | 2004-04-01 | 2005-01-12 | 上海交通大学 | 基于旋涂的纳米复制方法 |
-
2005
- 2005-12-08 CN CNB2005101304378A patent/CN100437361C/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101135842B (zh) * | 2007-10-25 | 2011-11-02 | 复旦大学 | 一种复制纳米压印模板的方法 |
CN105303222A (zh) * | 2015-11-12 | 2016-02-03 | 南京大学 | 一种激光成像防伪标签及其制备方法 |
CN105303222B (zh) * | 2015-11-12 | 2018-10-19 | 南京大学 | 一种激光成像防伪标签及其制备方法 |
CN106842825A (zh) * | 2017-03-21 | 2017-06-13 | 京东方科技集团股份有限公司 | 母模及其制造方法 |
US11131930B2 (en) | 2017-03-21 | 2021-09-28 | Boe Technology Group Co., Ltd. | Female mold and method for manufacturing the same |
WO2019056586A1 (zh) * | 2017-09-20 | 2019-03-28 | 南方科技大学 | 一种制备光学超构表面的方法 |
CN112394449A (zh) * | 2020-11-17 | 2021-02-23 | 深圳珑璟光电科技有限公司 | 一种超构表面耦合元件的制作方法 |
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CN100437361C (zh) | 2008-11-26 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |