CN1971854A - Substrate treating method and apparatus - Google Patents
Substrate treating method and apparatus Download PDFInfo
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- CN1971854A CN1971854A CN 200610149397 CN200610149397A CN1971854A CN 1971854 A CN1971854 A CN 1971854A CN 200610149397 CN200610149397 CN 200610149397 CN 200610149397 A CN200610149397 A CN 200610149397A CN 1971854 A CN1971854 A CN 1971854A
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 82
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 46
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000001301 oxygen Substances 0.000 claims abstract description 44
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 43
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000012530 fluid Substances 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 41
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 238000003672 processing method Methods 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 12
- 230000007723 transport mechanism Effects 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 3
- 230000003028 elevating effect Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 57
- 229920002120 photoresistant polymer Polymers 0.000 description 35
- 238000004380 ashing Methods 0.000 description 20
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Provided are a substrate treating method and device. The substrate treating method includes heating a substrate having an ion-implanted film formed on a surface thereof in an oxygen environment, and removing the film from the surface of the substrate by supplying a treating solution containing sulfuric acid and hydrogen peroxide solution or a treating solution containing ozone to the substrate after the heating step.
Description
Technical field
The present invention relates to a kind of substrate processing method using same and device thereof that utilizes treatment fluid to come substrates such as process semiconductor wafers (below, abbreviate substrate as), especially relate to a kind of technology of removing on the surface that is formed on substrate and carrying out the film that ion injects.
Background technology
In recent years, be accompanied by the miniaturization of pattern and the ionic weight that is injected in the wafer increases, therefore, now, maximum ion injection rates all reaches 10 * 10 during for example with arsenic
16Individual/cm
2About.When carrying out such ion injection, inject, adopt photoresist usually as mask in order to stop the ion beyond the target area.Finishing after ion injects, peel off and remove photoresist, still, the injection rate of ion is many more, and then the surface of photoresist is rotten more and become difficult more and peel off.Therefore, in order to remove like this mask after deionization injects, and implement the operation of so-called ashing (ashing).
In the past, this device had and possessed the isoionic chamber (chamber) of generation, utilizes the plasma of high temperature to come ashing to remove the plasma ashing device of photoresist (for example, with reference to TOHKEMY 2000-173991 communique).
But, under the situation of existing example, have following problem with this structure.
That is, because conventional device is used plasma, thus the pattern of damage wafers sometimes, thereby, because this is former thereby have a such problem of decrease in yield.
Therefore, proposing has the method for not carrying out ashing and utilizing the wet process of treatment fluid, and still, peeling off of the photoresist (photoresist of high injection rate (Dose)) that injection rate is many is extremely difficult, and has to carry out ashing in the reality.
Summary of the invention
The present invention proposes in view of this present situation, thereby its purpose is to provide a kind of substrate processing method using same and device thereof that does not carry out ashing and can peel off the film of removing high injection rate with wet process of handling by well-designed forward part.
The inventor recognizes following result in order to address the above problem by making great efforts research.
The inventor had carried out carrying out in advance with all temps the experiment of heat treated before the treatment fluid that utilization comprises sulfuric acid and hydrogenperoxide steam generator is handled the substrate of the film be coated with high injection rate.It found that following situation: as Fig. 1～shown in Figure 6, if handling and carry out in oxygen atmosphere in the common processing as forward part is after the heat treated of 300～500 ℃ high temperature not carrying out, utilize the processing of treatment fluid again, then can be easily peeling off by the processing that only utilizes treatment fluid from substrate is the film of the high injection rate that can't peel off.The present invention based on such viewpoint adopts following structure.
The present invention is a kind of substrate processing method using same that substrate is handled, and said method comprises following operation: heating process, and the substrate that in oxygen atmosphere the surface is formed with the film that was injected by ion heats; Remove operation, the substrate after the above-mentioned heating process is supplied with the treatment fluid that comprises the treatment fluid of sulfuric acid and hydrogenperoxide steam generator or comprise ozone, and remove the lip-deep film that is formed on substrate.
In addition, so-called here " oxygen atmosphere " is meant: the oxygen concentration in the gas is 0～21[vol%].According to the present invention, though its degree than ashing treatment a little less than, in heating process, by in oxygen atmosphere, carrying out heat treated, and can be to a certain extent with the film ashing.Then, in removing operation, utilize the wet process of treatment fluid, thereby easily peel off to a certain extent, therefore it can be removed fully by ashed film.Thereby,, remove and it is fully peeled off even if the film of high injection rate also can not carry out ashing.Its result can prevent to bring damage to the pattern of substrate, thereby can realize the raising of rate of finished products.
In addition, preferably, among the present invention after above-mentioned heating process and above-mentioned remove operation before, also comprise the cooling process that substrate is cooled to normal temperature.
After heating process is through with heating,, also can in removing operation, bring into play same effect even substrate returns to normal temperature in cooling process.Thereby, even owing to need operating under the situation that is necessary to lower the temperature to substrate, or from heating process to remove till the operation during have the time interval, also can bring into play same effect.
In addition, preferably, the heating-up temperature in the above-mentioned heating process of the present invention is in 300～500 ℃ the temperature range.
If adopt this temperature range, then can carry out in removing operation, utilizing the ashing of the degree that treatment fluid can suitably be removed.If be lower than 300 ℃, then the ashing of film becomes insufficient, and if surpass 500 ℃, then can produce the profile of impurities that is entrained in the substrate is brought defectives such as influence.
The present invention is a kind of substrate board treatment that substrate is handled, and said apparatus comprises: heating unit, and it heats the substrate that the surface is formed with the film that was injected by ion in oxygen atmosphere; Remove the unit, it supplies with the treatment fluid that comprises the treatment fluid of sulfuric acid and hydrogenperoxide steam generator or comprise ozone for the substrate after the heating in above-mentioned heating unit, and removes the lip-deep film that is formed on substrate; Transport mechanism, it removes unit conveyance from above-mentioned heating unit to above-mentioned with substrate.
In addition, so-called here " oxygen atmosphere " is meant: the oxygen concentration in the gas is 0～21[vol%].According to the present invention, by heating process, in oxygen atmosphere, substrate is carried out heat treated, and to a certain extent with the film ashing.Then, utilize transport mechanism with substrate transferring to removing in the unit, and by removing the unit, by substrate is supplied with treatment fluid, even if thereby the film that is overlayed on the substrate is the film of high injection rate, also can easily it be peeled off, and it fully can be removed thus.Its result can prevent to bring damage to the pattern of substrate, thereby can realize the raising of rate of finished products.
Description of drawings
Fig. 1 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 300 ℃ and has just heated surface state afterwards down.
Fig. 2 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in the surface state of 300 ℃ of mixed liquors that utilize sulfuric acid and hydrogenperoxide steam generator down after the heating, again after just having handled.
Fig. 3 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 450 ℃ and has just heated surface state afterwards down.
Fig. 4 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in the surface state of 450 ℃ of mixed liquors that utilize sulfuric acid and hydrogenperoxide steam generator down after the heating, again after just having handled.
Fig. 5 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 500 ℃ and has just heated surface state afterwards down.
Fig. 6 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in the surface state of 500 ℃ of mixed liquors that utilize sulfuric acid and hydrogenperoxide steam generator down after the heating, again after just having handled.
Fig. 7 A, Fig. 7 B are the figure that expression is in the surface state of the substrate that carries out overcooled state after the heating process, and Fig. 7 A represents to utilize the state of cooling of air cooling, and Fig. 7 B represents to utilize the state of cooling of water-cooled.
Fig. 8 is the figure of schematic configuration of the substrate board treatment of expression second embodiment.
Fig. 9 is the figure of schematic configuration of the substrate board treatment of expression the 3rd embodiment.
Figure 10 A, Figure 10 B are the summary construction diagrams of the optimum structure of expression arm, and Figure 10 A is a vertical view, and Figure 10 B is an end view.
Embodiment
Below, describe most preferred embodiment of the present invention with reference to the accompanying drawings in detail.
First embodiment
Below, with reference to Fig. 1～Fig. 7 B, the first embodiment of the present invention is described.
In addition, Fig. 1 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 300 ℃ and has just heated surface state afterwards down.Fig. 2 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 300 ℃ and utilizes sulfuric acid (H down after the heating, again
2SO
4) and hydrogenperoxide steam generator (H
2O
2) the surface state of mixed liquor (SPM:Sulfuric acid/hydrogen Peroxide Mixture) after just having handled.Fig. 3 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 450 ℃ and has just heated surface state afterwards down.Fig. 4 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in the surface state of 450 ℃ of mixed liquors (SPM) that utilize sulfuric acid and hydrogenperoxide steam generator down after the heating, again after just having handled.Fig. 5 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in 500 ℃ and has just heated surface state afterwards down.Fig. 6 is used to illustrate the substrate processing method using same of first embodiment, and it is illustrated in the surface state of 500 ℃ of mixed liquors (SPM) that utilize sulfuric acid and hydrogenperoxide steam generator down after the heating, again after just having handled.In addition, Fig. 7 A, Fig. 7 B are the figure that expression is in the surface state of the substrate that carries out overcooled state after the heating process, and Fig. 7 A represents to utilize the state of cooling of air cooling, and Fig. 7 B represents to utilize the state of cooling of water-cooled.In these Fig. 1～Fig. 7 B, vertically represent heating time, laterally represent the enlargement ratio of light microscope.In addition, when heating, substrate is close on the heating plate.Also have, the sulfuric acid in the SPM solution and the mixing ratio of hydrogenperoxide steam generator are 0.5, and the dip time of substrate in SPM solution was 30 seconds.
Lining forms photoresist on wafer, and this photoresist has been carried out the ion injection as mask.Photoresist is the KrF etchant resist, with it with 0.8[μ m] thickness overlayed on naked silicon (BareSilicon) wafer.Ion injects as injecting kind and has used arsenic (As), and be set at inject energy (dose energy)=40[KeV], injection rate=1 * 10
16[individual/cm
2].Thereby the photoresist of this wafer becomes so-called high injection rate.In addition, be meant that in this what is called " oxygen atmosphere " oxygen concentration in the gas is 0～21[vol%], and, by the supply ratio of change oxygen and nitrogen, keep the oxygen concentration in the gas.
Then, Fig. 1, Fig. 2, Fig. 5 are illustrated in the oxygen atmosphere of non-heating wafer have been implemented state after 300 ℃, 450 ℃, 500 ℃ the heating process.Then, just implemented after the heating process, promptly made wafer flood the stipulated time in treatment fluid and implemented to remove operation, wherein, this treatment fluid is to be made of the SPM solution as the mixed liquor of sulfuric acid and hydrogenperoxide steam generator.And, the state when Fig. 2, Fig. 4, Fig. 6 represent to take out from treatment fluid.
Fig. 1 is illustrated in 300 ℃ of wafers that just heated down.From accompanying drawing as can be known: though rotten through the short time photoresist about 10 seconds, it is elongated to be accompanied by heating time, and it is many then to peel off remaining quantitative change.Can infer: this is to depend on heating time because the curing of photoresist reaches fixedly to adhere to.
Fig. 2 be illustrated in 300 ℃ down after the heating, the wafer after being immersed in the treatment fluid that constitutes by SPM solution again.From accompanying drawing as can be known: even the short time about 10 seconds also can fully peel off, on the other hand, heating time, the long more residual volume of peeling off became many more.Can infer equally with above-mentioned: this is owing to the curing of the photoresist that depends on heating time and fixedly adheres to.
Fig. 3 is illustrated in the state of 450 ℃ of wafers that just heated down.Can confirm by perusal: even the short time about 10 seconds also makes photoresist rotten, and photoresist depends on heating time and the situation of variable color.
Fig. 4 be illustrated in 450 ℃ down after the heating, the wafer after being immersed in the treatment fluid that constitutes by SPM solution again.From accompanying drawing as can be known: even the short time about 10 seconds by being immersed in the SPM solution, also can fully peel off photoresist.In addition, the stripping performance of photoresist depends on heating time and improves, and can infer thus: if be in 450 ℃, then carbonization and the curing of photoresist and fixedly adhewsive action compare and become stronger.
Fig. 5 is illustrated in the state of 500 ℃ of wafers that just heated down.Can confirm by perusal: rotten through photoresist heating time about 10 seconds, and its surface depends on heating time and the situation of variable color.The rotten time is compared more remarkable with 300 ℃ situation.Can infer thus: have stronger carbonization in the time of 500 ℃.
Fig. 6 be illustrated in 500 ℃ down after the heating, the wafer after being immersed in the treatment fluid that constitutes by SPM solution again.By the heating of the short time about 10 seconds, and can fully carry out peeling off of photoresist.In addition, stripping ability depends on heating time and improves, and can infer thus: if be in 500 ℃, then carbonization more is better than the curing of photoresist and fixing adhewsive action.
Like this, in oxygen atmosphere, wafer W is carried out the heat treated of 300～500 ℃ of high temperature, though this than ashing treatment a little less than, ashing photoresist to a certain extent thus.Then, carry out wet process, and easily peel off to a certain extent, thereby it fully can be removed by ashed photoresist F by utilizing the treatment fluid constitute by SPM solution.Therefore, even the photoresist of high injection rate can not carry out ashing yet and fully it is peeled off and remove.Its result can prevent from the pattern of wafer is brought damage, thereby can realize the raising of rate of finished products.
In addition, as mentioned above, heating-up temperature is preferably 300～500 ℃ scope.If adopt this temperature range, then can carry out in removing operation, utilizing the ashing of the degree that treatment fluid can suitably be removed.In addition, if be lower than 300 ℃, then ashing becomes insufficient, and if surpass 500 ℃, then may influence the profile of impurities that is entrained in the wafer.
In addition, after carrying out heating process and before wafer W being immersed in the treatment fluid that constitutes by SPM solution, carried out such affirmation, promptly, even the temperature of wafer W returns to normal temperature, whether also can bring into play and above-mentioned same effect (with reference to Fig. 7 A, Fig. 7 B).
Promptly, carry out after the heating process, even by being placed on airborne air cooling wafer W is cooled to normal temperature (Fig. 7 A), or by the water-cooled in the pure water that is immersed in normal temperature wafer W is cooled to normal temperature (Fig. 7 B), the surface of photoresist F all loses smooth and is quite coarse state.That is to say, be that photoresist F is subjected to the very state of macrolesion, if be immersed under this state in the treatment fluid then in the nature of things, removes photoresist F with above-mentioned can easily peeling off equally.By this result as can be known, by in the oxygen atmosphere of 300～500 ℃ of high temperature, wafer W being carried out heat treated, and utilize the treatment fluid that constitutes by SPM solution and can easily peel off and remove photoresist F.
From the above, after in heating process, wafer W being heated,, also can bring into play same effect even wafer W returns to normal temperature.Therefore, be necessary the situation of lowering the temperature, or all can both bring into play same effect at interval the time from heating process life period till removing operation in relation owing to the operation of wafer W.
Second embodiment
Then, with reference to accompanying drawing, the second embodiment of the present invention is described.
Fig. 8 is the figure of schematic configuration of the substrate board treatment of expression second embodiment.
Can preferably implement the substrate board treatment of the substrate processing method using same that the first above-mentioned embodiment put down in writing, for example have heating unit 1, conveyance unit 3, remove unit 5.
Besieged around the heating plate 7 by chamber 13.Be connected with the distolateral of oxygen supplying tubing 15 at chamber 13.Another distolateral connection in oxygen supplying tubing 15 is connected with oxygen supply source 16 (oxygen supply unit).Control oxygen (O is installed on this oxygen supplying tubing 15
2) flow and circulation and the control valve 17 that do not circulate.In addition, be connected with the distolateral of nitrogen supplying tubing 18 at chamber 13.Another distolateral connection in nitrogen supplying tubing 18 is connected with nitrogen supply source 19 (nitrogen supply unit).Control nitrogen (N is installed on this nitrogen supplying tubing 18
2) flow and circulation and the control valve 20 that do not circulate.Control part 21 is adjusted from the quantity delivered of the oxygen of oxygen supply source 16 and from the quantity delivered of the nitrogen of nitrogen supply source 19 by control control valve 17 and control valve 20.From the quantity delivered of the oxygen of oxygen supply source 16 and quantity delivered, become 0～21[vol% with the oxygen concentration in the gas in the chamber 13 by 21 controls of this control part thus from the nitrogen of nitrogen supply source 19] mode adjust.And then, on a position of chamber 13, be equipped with the exhaust outlet 22 that is used to discharge internal gas.
But the conveyance unit 13 that is equivalent to transport mechanism of the present invention is with free lifting and be configured rotatably, and has the arm 23 of retractable.This arm 23 is at heating unit 1 and remove conveyance wafer W between the unit 5.
The unit 5 of removing in this first embodiment is that wafer W, so-called single sheet type is handled on many ground.More particularly, have chuck 25 (maintaining body) with flat-hand position supporting wafers W, be connected the bottom of this chuck 25 rotating shaft 27, drive this rotating shaft 27 and make its rotation motor 29 (drive division), surround chuck 25 around disperse and prevent cup 31.Disperse and prevent that cup 31 from reclaiming the treatment fluid that disperses towards periphery from wafer W.In addition, disperse and prevent that cup 31 from adopting relative chuck 25 liftable structures.
In addition, above the pivot of chuck 25, dispose nozzle 33 (treatment fluid supply unit).Be connected with the distolateral of pipe arrangement 37 at nozzle 33, and another distolateral connection of pipe arrangement 37 is connected in sulfuric acid supply source 39.Swim side from it at pipe arrangement 37 and work the control valve 43 that is provided with through type heater 41, control flow and supplies with and do not supply with.Through type heater 41 for example with 100～200 ℃ scope to flowing through the sulfuric acid (H of pipe arrangement 37
2SO
4) heat.Be connected with the distolateral of pipe arrangement 45 at pipe arrangement 37, and its another distolateral connection is connected in hydrogenperoxide steam generator supply source 47.Be equipped with at pipe arrangement 45 and be used to control hydrogenperoxide steam generator (H
2O
2) flow and the control valve 49 of supplying with and not supplying with.
Then, the processing that utilizes said apparatus is described.
At first, control part 21 is opened control valve 17, and with the flow of regulation when oxygen is supplied with in chamber 13 from oxygen supplying tubing 15, open control valve 20 and nitrogen supplied with to chamber 13 in from nitrogen supplying tubing 18, thereby become 0～21[vol% with the oxygen concentration in the interior gas of chamber 13 with the flow of regulation] mode adjust.At this moment, with low discharge the gas in the chamber 13 is carried out exhaust from exhaust outlet 22.And then, utilize heater 9, when 7 surface of heating plate for example is set at 300 ℃, supporting pin 11 is protruded upward from the surface of heating plate 7.
Open the not shown shutter door of chamber 13, and utilize the arm 23 of conveyance unit 3 to move into the wafer W that the surface is formed with the photoresist F of high injection rate.Wafer W received be placed on the top of supporting pin 11, and when making supporting pin 11 enter into the below on surface of heating plate 7, arm 23 is withdrawn into outside the chamber 13, and closes not shown shutter door.Then, at the appointed time, for example kept this state 180 seconds.By this heating process, as described in first embodiment, the lip-deep photoresist F that is formed on wafer W is by ashing.
Passed through after the stipulated time, when supporting pin 11 is protruded, the never illustrated shutter door of arm 23 has been entered, and wafer W is reprinted arm 23.Then, prevent under cup 31 states of keeping out of the way that when wafer W was reprinted chuck 25 from conveyance unit 3, making disperses prevented that cup 31 from rising and moving it and handle the position dispersing.
CD-ROM drive motor 29, and drive wafer W with the revolution of regulation.Revolution for example is the low speed rotation about 100～500rpm.And then the heating-up temperature of through type heater 41 for example is set at 120 ℃, and opens control valve 43 and when supplying with sulfuric acid heat with the flow of regulation, opens control valve 49 and with the hydrogenperoxide steam generator of the flow supply normal temperature stipulated.Thus, generate the treatment fluid (SPM solution) that the mixed liquor by hot sulfuric acid and hydrogenperoxide steam generator constitutes, and supply with treatment fluid to the surface of wafer W, remove in heating process by ashed photoresist F thereby dissolve from nozzle 33.Then, never illustrated nozzle is supplied with pure water to wafer W and is cleaned, and makes the wafer W high speed rotating and dry.
Like this, by heating unit 1, in oxygen atmosphere, wafer W is carried out heat treated, and photoresist F is carried out to a certain degree ashing, and, by removing unit 5, by wafer W is supplied with treatment fluid, even and be formed on photoresist F on the wafer W is that the film of high injection rate also can easily be peeled off, thereby it can be removed fully.Its result can prevent to bring damage to the pattern of wafer W, thereby can realize the raising of rate of finished products.
The 3rd embodiment
Then, with reference to accompanying drawing, the third embodiment of the present invention is described.Fig. 9 is the figure of schematic configuration of the substrate board treatment of expression the 3rd embodiment.In addition, for putting on same reference numerals, and omit detailed explanation with the common structure of second embodiment.
The 3rd embodiment removes on this point of unit 5A having so-called batch (Batch) formula, and is different with above-mentioned second embodiment.Remove unit 5A and have the treatment trough 51 that stores treatment fluid.Be connected with the distolateral of pipe arrangement 53 in the bottom of this treatment trough 51.When another distolateral connection of pipe arrangement 53 (treatment fluid supply source) is connected with not shown pure water supply source, on a position of pipe arrangement 53, be equipped with mixing valve (Mixing Valve) 55.In addition, be provided with through type heater 57 in the downstream of mixing valve 55, this through type heater 57 can be heated to the treatment fluid that flows through 200～300 ℃ high temperature.When mixing valve 55 is communicated with the supply pipe 61 that is connected sulfuric acid supply source 59, be communicated with the supply pipe 65 that is connected hydrogenperoxide steam generator supply source 63.Be equipped with control flow and the control valve 67 of supplying with and not supplying with at supply pipe 61, and be equipped with same control valve 69 at supply pipe 65.
Remove unit 5A and have lift 71 (elevating mechanism), " the processing position " that this lift 71 can be in treatment trough 51 and be positioned at lifting between " delivery position " of top of treatment trough 51.This lift 71 has the backboard 73 of vertical position, from the bottom of backboard 73 to the side-prominent and support portion 75 that set.Support portion 75 has a plurality of grooves (omitting diagram), the bottom of these a plurality of groove contact supporting wafers W, and many wafer W are supported for orthostatism.In addition, go out at conveyance unit 3 and this and to have the posture converter unit between unit 5A (omitting diagram), this posture converter unit receives many wafer W from conveyance unit 3 with flat-hand position, and receives after the wafer W of regulation number, and posture is transformed into vertical position.
In the heating unit 1 of such substrate board treatment that constitutes, implement the heat treated (for example 300 ℃) of high temperature for the wafer W that is coated with photoresist F.Then, many wafer W are reprinted after the lift 71 of removing unit 5A, in treatment trough 51, remove processing via conveyance unit 3.
More particularly, for example remove processing by following.
Promptly, when at first making sulfuric acid and hydrogenperoxide steam generator make the treatment fluid of SPM solution flow through pipe arrangement 53 by mixing valve 55 from sulfuric acid supply source 59 and hydrogenperoxide steam generator supply source 63, utilize through type heater 57 to be heated to about 120 ℃, and will be stored in the treatment trough 51 by the treatment fluid that SPM solution constitutes.Then, make lift 71 drop to " processing position ", and this state is kept the stipulated time (for example 180 seconds).
Passed through after the stipulated time, in the time of closed control valve 67,69, after the pure water that treatment trough 51 is supplied with pure water and carried out the stipulated time cleans, made lift 71 rise to " delivery position " and come end process via pipe arrangement 53.
If according to the structure of this second embodiment, when then can bring into play with the same effect of first embodiment batch handling, thereby can increase processing number in average time, therefore can handle a large amount of wafer W.
The present invention not only is defined in above-mentioned execution mode, and also can be out of shape enforcement according to following mode.
(1) in above-mentioned first～the 3rd embodiment,, for example, also can use ozone is dissolved in the treatment fluid that forms in the pure water though used the SPM solution that comprises sulfuric acid and hydrogenperoxide steam generator as treatment fluid.
(2) in above-mentioned second, third each embodiment, wafer W that will heat treated is crossed in heating unit 1 utilizes conveyance unit 3 to come conveyance immediately to removing among unit 5, the 5A, and removes processing.But, as illustrated in first embodiment, even also can bring into play same effect owing to temperature after the heating returns to normal temperature, therefore, can not possess conveyance unit 3, and the temperature retrieval of wafer W is after normal temperature by the time, and conveyance also can to removing among unit 5, the 5A by manually operated conveyance.
(3) in each embodiment of above-mentioned first～the 3rd, lift photoresist and be illustrated, but if the mask that injects as ion and available film, also can adopt the kind of other film for example.
(4) in each embodiment of above-mentioned first～the 3rd, having given an example as heating unit 1 has the structure of heating plate 7, but for example, also can adopt illumination annealing (lamp anneal) device etc.
(5) in above-mentioned second, third embodiment, preferably the arm 23 of conveyance unit 3 is constituted in as shown in figure 10 mode.In addition, Figure 10 A, Figure 10 B are the summary construction diagrams of the preferred structure of expression arm, and Figure 10 A is a vertical view, and Figure 10 B is an end view.
This arm 23 has tongue-shaped main body 77, and is formed with three grooves 79 in front, and this groove 79 allows to make three supporting pins 11 to advance and retreat from leading section.In addition, near each groove 79, be formed with the microspike 81 that protrudes in upper surface.Be formed with cooling water runner 83 in main body 77 in the mode of avoiding three grooves 79.This one distolateral be inflow path 85, and the other end is an outflow path 87.Supply with the cooling water that the set point of temperature of being adjusted to is arranged to this inflow path 85, and cooling water is arranged from flowing out road 87 discharges, thereby, when arm 23 supports are heated the wafer W of handling, can carry out cooling to wafer W.Thus, even the device of next operation adopts the structure of the wafer W can't operate high temperature, to the temperature of carrying out also it can being cooled to till the conveyance normal temperature etc., so can be by the device of next operation handle wafer W easily.In addition, have in conveyance unit 3 under the situation of this arm 23, have the microspike 81 that can be inserted into arm 23 and the conveyance unit of the conveyance arm in the gap between main body 77 upper surfaces, wafer W is handed off to next device gets final product as long as utilize.
The present invention also can implement with other concrete form on the basis that does not break away from its thought or essence, therefore, as shown in invention scope, be not will be, but should be with reference to claim described later with reference to above-mentioned explanation.
Claims (10)
1. a substrate processing method using same is handled substrate, it is characterized in that, comprises following operation:
Heating process, the substrate that in oxygen atmosphere the surface is formed with the film that was injected by ion heats;
Remove operation, the substrate after the above-mentioned heating process is supplied with the treatment fluid that comprises the treatment fluid of sulfuric acid and hydrogenperoxide steam generator or comprise ozone, and remove the lip-deep film that is formed on substrate.
2. substrate processing method using same as claimed in claim 1 is characterized in that, after above-mentioned heating process and above-mentioned remove operation before, also comprise making substrate cool to the cooling process of normal temperature.
3. substrate processing method using same as claimed in claim 1 or 2 is characterized in that, the heating-up temperature in the above-mentioned heating process is in 300～500 ℃ the temperature range.
4. a substrate board treatment is handled substrate, it is characterized in that said apparatus comprises:
Heating unit, it heats the substrate that the surface is formed with the film that was injected by ion in oxygen atmosphere;
Remove the unit, it supplies with the treatment fluid that comprises the treatment fluid of sulfuric acid and hydrogenperoxide steam generator or comprise ozone to the substrate after the heating in above-mentioned heating unit, and removes the lip-deep film that is formed on substrate;
Transport mechanism, its with substrate from above-mentioned heating unit conveyance to the above-mentioned unit of removing.
5. substrate board treatment as claimed in claim 4 is characterized in that, the heating-up temperature of above-mentioned heating unit is set in 300～500 ℃ the temperature range.
6. substrate board treatment as claimed in claim 4 is characterized in that, above-mentioned heating unit has: heating plate, and it is used for loading and heated substrates; Chamber, its surround above-mentioned heating plate around; The oxygen supply unit, it supplies with oxygen in above-mentioned chamber; The nitrogen supply unit, it supplies with nitrogen in above-mentioned chamber; Control part, its control is adjusted oxygen concentration from the quantity delivered of the oxygen of above-mentioned oxygen supply unit and from the quantity delivered of the nitrogen of above-mentioned nitrogen supply unit.
7. substrate board treatment as claimed in claim 5 is characterized in that, above-mentioned heating unit has: heating plate, and it is used for loading and heated substrates; Chamber, its surround above-mentioned heating plate around; The oxygen supply unit, it supplies with oxygen in above-mentioned chamber; The nitrogen supply unit, it supplies with nitrogen in above-mentioned chamber; Control part, its control be from the quantity delivered of the oxygen of above-mentioned oxygen supply unit and from the quantity delivered of the nitrogen of above-mentioned nitrogen supply unit, and adjust oxygen concentration.
8. as any described substrate board treatment of claim 4～7, it is characterized in that the above-mentioned unit of removing has: maintaining body, it keeps a substrate; Drive division, it makes above-mentioned maintaining body rotation; The treatment fluid supply unit, its make by above-mentioned drive division be held the substrate rotation that mechanism keeps in, supply with treatment fluid to substrate.
9. as any described substrate board treatment of claim 4～7, it is characterized in that the above-mentioned unit of removing has: treatment trough, in the time of its stores processor liquid, accommodate substrate; The treatment fluid supply unit, it supplies with treatment fluid to above-mentioned treatment trough; Elevating mechanism when it keeps substrate, moves between the processing position in above-mentioned treatment trough and the top position of above-mentioned treatment trough.
10. as any described substrate board treatment of claim 4～7, it is characterized in that above-mentioned transport mechanism has cooling body at the arm that keeps substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005335835 | 2005-11-21 | ||
| JP2005335835 | 2005-11-21 | ||
| JP2006249726 | 2006-09-14 |
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| Publication Number | Publication Date |
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| CN1971854A true CN1971854A (en) | 2007-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610149397 Pending CN1971854A (en) | 2005-11-21 | 2006-11-21 | Substrate treating method and apparatus |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452823B (en) * | 2007-12-06 | 2010-09-22 | 细美事有限公司 | Ozonated water mixture supply apparatus and method, and substrate treating facility with the apparatus |
| CN102714124A (en) * | 2009-09-29 | 2012-10-03 | 瓦里安半导体设备公司 | Optical heater for cryogenic ion implanter surface regeneration |
| CN105981134A (en) * | 2014-02-14 | 2016-09-28 | 瓦里安半导体设备公司 | Heated Platen With Improved Temperature Uniformity |
| CN106919014A (en) * | 2015-09-24 | 2017-07-04 | 精工半导体有限公司 | The manufacture method of semiconductor substrate processing apparatus, stripping means and semiconductor device |
-
2006
- 2006-11-21 CN CN 200610149397 patent/CN1971854A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452823B (en) * | 2007-12-06 | 2010-09-22 | 细美事有限公司 | Ozonated water mixture supply apparatus and method, and substrate treating facility with the apparatus |
| CN102714124A (en) * | 2009-09-29 | 2012-10-03 | 瓦里安半导体设备公司 | Optical heater for cryogenic ion implanter surface regeneration |
| CN105981134A (en) * | 2014-02-14 | 2016-09-28 | 瓦里安半导体设备公司 | Heated Platen With Improved Temperature Uniformity |
| CN105981134B (en) * | 2014-02-14 | 2019-03-01 | 瓦里安半导体设备公司 | Heating platform with improvement temperature uniformity |
| CN106919014A (en) * | 2015-09-24 | 2017-07-04 | 精工半导体有限公司 | The manufacture method of semiconductor substrate processing apparatus, stripping means and semiconductor device |
| CN106919014B (en) * | 2015-09-24 | 2021-05-11 | 艾普凌科有限公司 | Semiconductor substrate processing apparatus, peeling method, and method for manufacturing semiconductor device |
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