WO2024075808A1 - Substrate treatment device - Google Patents

Substrate treatment device Download PDF

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Publication number
WO2024075808A1
WO2024075808A1 PCT/JP2023/036335 JP2023036335W WO2024075808A1 WO 2024075808 A1 WO2024075808 A1 WO 2024075808A1 JP 2023036335 W JP2023036335 W JP 2023036335W WO 2024075808 A1 WO2024075808 A1 WO 2024075808A1
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Prior art keywords
chemical liquid
substrate
unit
liquid
spm
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PCT/JP2023/036335
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French (fr)
Japanese (ja)
Inventor
亨 遠藤
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Priority claimed from JP2022161763A external-priority patent/JP2024055115A/en
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Publication of WO2024075808A1 publication Critical patent/WO2024075808A1/en

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  • the present invention relates to a substrate processing apparatus.
  • Patent Document 1 discloses a substrate processing apparatus that efficiently removes resist from a substrate while recovering SPM (Sulfuric Acid Hydrogen Peroxide Mixture) with a high concentration of sulfuric acid.
  • SPM is a mixture of sulfuric acid and hydrogen peroxide.
  • the substrate processing apparatus of Patent Document 1 supplies a first SPM to the substrate, and then supplies a second SPM, which has a higher mixture ratio of sulfuric acid and hydrogen peroxide than the first SPM, to the substrate to remove resist from the substrate.
  • the substrate processing apparatus of Patent Document 1 allows the first SPM discharged from the substrate to flow into a drainage pipe, and allows the second SPM discharged from the substrate to flow into a recovery pipe.
  • the substrate processing apparatus of Patent Document 1 includes a recovery tank, a sulfuric acid tank, and a nozzle.
  • the recovery pipe stores the second SPM in the recovery tank.
  • the second SPM in the recovery tank is sent to the sulfuric acid tank via a liquid supply pipe.
  • new sulfuric acid is replenished in the sulfuric acid tank.
  • the chemical solution in the sulfuric acid tank is supplied to the nozzle via the sulfuric acid pipe. Hydrogen peroxide is further supplied to the nozzle via a hydrogen peroxide pipe.
  • the substrate processing apparatus of Patent Document 1 creates the first SPM or the second SPM by controlling at least one of the sulfuric acid flow rate adjustment valve arranged in the sulfuric acid piping and the hydrogen peroxide flow rate adjustment valve arranged in the hydrogen peroxide piping to adjust the mixture ratio of the chemical solution supplied from the sulfuric acid tank and the hydrogen peroxide.
  • the substrate processing apparatus of Patent Document 1 uses the second SPM collected in the collection tank to create both the first SPM and the second SPM.
  • the second SPM collected in the collection tank may contain resist. Therefore, the cleanliness of the second SPM collected in the collection tank may be reduced by the resist. Therefore, the cleanliness of both the first SPM and the second SPM may be reduced. As a result, the number of particles on the processed substrate may increase, and the cleanliness of the processed substrate may be reduced. Therefore, in the substrate processing apparatus of Patent Document 1, it is necessary to increase the frequency of the liquid exchange process in which the chemical liquid in the sulfuric acid tank is replaced with new sulfuric acid liquid.
  • the present invention was made in consideration of the above problems, and its purpose is to provide a substrate processing apparatus in which the cleanliness of the substrate after substrate processing is unlikely to decrease even if the chemical liquid discharged from the substrate is recovered and reused.
  • the substrate processing apparatus includes a nozzle, a switching unit, a control unit, a liquid receiving unit, a drain line, a recovery line, a first storage unit, and a second storage unit.
  • the nozzle exclusively discharges a first chemical liquid and a second chemical liquid toward a substrate to process the substrate.
  • the switching unit switches the chemical liquid discharged from the nozzle between the first chemical liquid and the second chemical liquid.
  • the control unit controls the switching unit.
  • the liquid receiving unit includes a first liquid receiving unit and a second liquid receiving unit. The first liquid receiving unit receives the first chemical liquid discharged from the substrate. The second liquid receiving unit receives the second chemical liquid discharged from the substrate. The first chemical liquid flows into the drain line from the first liquid receiving unit.
  • the second chemical liquid flows into the recovery line from the second liquid receiving unit.
  • the first storage unit stores a third chemical liquid contained in the first chemical liquid.
  • the second storage section stores a fourth chemical liquid contained in the second chemical liquid.
  • the first chemical liquid and the second chemical liquid are the same type of chemical liquid.
  • the recovery line guides the second chemical liquid to the first storage section.
  • the substrate processing apparatus further includes a first circulation unit, a second circulation unit, and a chemical liquid supply line.
  • the first circulation unit circulates the third chemical liquid through the first storage unit.
  • the second circulation unit circulates the fourth chemical liquid through the second storage unit.
  • the third chemical liquid circulating through the first circulation unit flows into the chemical liquid supply line.
  • the fourth chemical liquid circulating through the second circulation unit flows into the chemical liquid supply line.
  • the switching unit switches between allowing the third chemical liquid to flow into the chemical liquid supply line and stopping the flow.
  • the substrate treatment with the first chemical liquid is a process for removing a target object from the substrate
  • the substrate treatment with the second chemical liquid is a process for removing a residue of the target object from the substrate
  • the first chemical liquid and the second chemical liquid are a mixture of sulfuric acid and hydrogen peroxide.
  • the fourth chemical solution is a fresh solution of the sulfuric acid.
  • the first storage section stores the sulfuric acid in an initial state, and stores a mixture of the sulfuric acid and the hydrogen peroxide solution as the second chemical solution is collected by the collection line.
  • the substrate processing apparatus makes it difficult for the cleanliness of the substrate to decrease after substrate processing, even if the chemicals discharged from the substrate are recovered and reused.
  • FIG. 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention
  • 1 is a diagram showing a part of a configuration of a substrate processing apparatus according to an embodiment of the present invention
  • 2 is a diagram showing configurations of a first supply unit and a second supply unit included in the substrate processing apparatus according to the embodiment of the present invention
  • FIG. 13 is a diagram showing a first supply unit and a second supply unit when a substrate is being processed by a first SPM
  • FIG. 13 is a diagram showing the first supply unit and the second supply unit when a substrate is being processed by a second SPM
  • FIG. 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a substrate processing section when performing substrate processing by a second SPM.
  • FIG. 2 is a diagram showing the substrate processing section when a rinsing liquid is supplied to the substrate.
  • the "substrate” that is the subject of substrate processing in the substrate processing apparatus according to the present invention can be a variety of substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks.
  • substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks.
  • FIG. 1 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 processes substrates W using a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes substrates W one by one.
  • the substrate processing apparatus 100 includes a plurality of substrate processing units 1, a first chemical liquid cabinet 101, a second chemical liquid cabinet 103, a plurality of fluid boxes 105, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 200.
  • Each load port LP accommodates a stack of multiple substrates W.
  • each unprocessed substrate W substrate W before processing
  • has an unwanted resist mask resist film attached to it.
  • the indexer robot IR transports substrates W between the load port LP and the center robot CR.
  • the center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 1.
  • a placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to indirectly transfer substrates W between the indexer robot IR and the center robot CR via the placement stage.
  • the multiple substrate processing units 1 form multiple towers TW (four towers TW in FIG. 1).
  • the multiple towers TW are arranged to surround the center robot CR in a plan view.
  • Each tower TW includes multiple substrate processing units 1 (three substrate processing units 1 in FIG. 1) stacked one above the other.
  • the first chemical liquid cabinet 101 contains sulfuric acid (H 2 SO 4 ) or a mixture of sulfuric acid and hydrogen peroxide (H 2 O 2 ). Specifically, the first chemical liquid cabinet 101 contains new sulfuric acid in an initial state.
  • the substrate processing unit 1 processes the substrate W using a sulfuric acid-hydrogen peroxide solution (SPM: Sulfuric Acid Hydrogen Peroxide Mixture).
  • SPM sulfuric acid-hydrogen peroxide solution
  • SPM is a mixture of sulfuric acid and hydrogen peroxide.
  • the substrate processing unit 1 performs substrate processing, the SPM is collected from the substrate processing unit 1 and stored in the first chemical liquid cabinet 101.
  • the sulfuric acid and the SPM collected from the substrate processing unit 1 are mixed in the first chemical liquid cabinet 101, and a mixture of sulfuric acid and hydrogen peroxide is stored in the first chemical liquid cabinet 101.
  • the second chemical liquid cabinet 103 contains new sulfuric acid. SPM recovered from the substrate processing unit 1 is not contained in the second chemical liquid cabinet 103. Therefore, the second chemical liquid cabinet 103 always contains new sulfuric acid.
  • Each of the fluid boxes 105 corresponds to one of the multiple towers TW.
  • the chemical liquid (sulfuric acid, or a mixture of sulfuric acid and hydrogen peroxide) in the first chemical liquid cabinet 101 is supplied to all substrate processing units 1 included in the tower TW corresponding to the fluid box 105 via one of the fluid boxes 105.
  • the chemical liquid (sulfuric acid) in the second chemical liquid cabinet 103 is supplied to all substrate processing units 1 included in the tower TW corresponding to the fluid box 105 via one of the fluid boxes 105.
  • Each of the substrate processing units 1 processes the substrate W using SPM. More specifically, each of the substrate processing units 1 supplies the substrate W with a first SPM, a second SPM, and a rinse liquid in that order to remove the resist film from the substrate W.
  • the first SPM and the second SPM have different mixture ratios of sulfuric acid and hydrogen peroxide. More specifically, the second SPM has a higher proportion of sulfuric acid than the first SPM. In other words, the second SPM has a higher concentration of sulfuric acid than the first SPM.
  • the rinse liquid is deionized water (DIW).
  • DIW deionized water
  • the rinse liquid is not limited to deionized water.
  • the rinse liquid can be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).
  • the control device 200 controls the operation of each part of the substrate processing apparatus 100.
  • the control device 200 controls the substrate processing unit 1, the load port LP, the indexer robot IR, the center robot CR, the first chemical liquid cabinet 101, the second chemical liquid cabinet 103, and the fluid box 105.
  • the control device 200 includes a control unit 201 and a memory unit 202.
  • the control unit 201 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 202.
  • the control unit 201 has, for example, a processor.
  • the control unit 201 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor.
  • the control unit 201 may have a general-purpose computing device or a dedicated computing device.
  • the memory unit 202 stores various information for controlling the operation of the substrate processing apparatus 100.
  • the memory unit 202 stores data and computer programs.
  • the data includes, for example, a threshold value for the concentration of sulfuric acid contained in the chemical liquid contained in the first chemical liquid cabinet 101.
  • the data also includes a set value for the temperature of the chemical liquid contained in the first chemical liquid cabinet 101, a set value for the temperature of the chemical liquid contained in the second chemical liquid cabinet 103, and a set value for the temperature of the chemical liquid supplied from the fluid box 105 to the substrate processing unit 1.
  • the data includes recipe data.
  • the recipe data indicates a recipe that specifies the processing content, processing conditions, and processing procedure for the substrate W.
  • the storage unit 202 has a main storage device.
  • the main storage device is, for example, a semiconductor memory.
  • the storage unit 202 may further have an auxiliary storage device.
  • the auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive.
  • the storage unit 202 may include removable media.
  • Figure 2 is a diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment.
  • Figure 2 shows the configuration of the first chemical liquid cabinet 101, the configuration of the second chemical liquid cabinet 103, and the configuration of the substrate processing section 1.
  • Figure 2 also shows various pipes that circulate chemical liquids between the first chemical liquid cabinet 101, the second chemical liquid cabinet 103, and the substrate processing section 1.
  • the substrate processing apparatus 100 further includes a first circulation unit 110, a first supply unit 120, a concentration measurement unit 130, a first replenishment unit 140, a second circulation unit 150, a second supply unit 160, a second replenishment unit 170, a recovery unit 30, a first supply line L1, and a drainage line L2.
  • the first supply line L1 is an example of a "chemical liquid supply line.”
  • the substrate processing section 1 has a chamber 1a, a nozzle 2, an opposing member 3, and a liquid receiving section 4.
  • Chamber 1a has a roughly box-like shape. Chamber 1a houses a nozzle 2, an opposing member 3, a liquid receiving portion 4, and a substrate W.
  • the nozzle 2 exclusively discharges the first SPM and the second SPM toward the substrate W to process the substrate W.
  • the first SPM is an example of a "first chemical liquid”
  • the second SPM is an example of a "second chemical liquid”.
  • the second SPM is the same type of chemical liquid as the first SPM, and as already explained, the first SPM and the second SPM have different mixture ratios of sulfuric acid and hydrogen peroxide solution.
  • the substrate processing with the first SPM is a process of removing a portion of the resist film from the substrate W
  • the substrate processing with the second SPM is a process of removing residual resist film from the substrate W.
  • the resist film is an example of an "object to be removed”.
  • the nozzle 2 supplies the first SPM to the substrate W to form a liquid film of the first SPM on the upper surface of the substrate W.
  • the first SPM causes a portion of the hardened layer of the resist film contained in the substrate W to be peeled off from the substrate body. Alternatively, a portion of the hardened layer of the resist film is destroyed.
  • the nozzle 2 supplies the second SPM to the substrate W.
  • the first SPM is swept away from the substrate W by the second SPM and discharged from the substrate W, and a liquid film of the second SPM is formed on the upper surface of the substrate W.
  • the hardened layer peeled off or destroyed by the first SPM is discharged from the substrate W together with the first SPM.
  • the residue of the resist film contained in the substrate W is peeled off from the substrate body. Alternatively, the residue is destroyed.
  • the opposing member 3 faces the substrate W. More specifically, the opposing member 3 is disposed above the substrate W. After the liquid film of the second SPM is formed, the opposing member 3 supplies a rinse liquid to the substrate W. As a result, the second SPM is swept away from the substrate W by the rinse liquid and discharged from the substrate W. At this time, the residue of the resist film that has been peeled off or destroyed by the second SPM is discharged from the substrate W together with the second SPM.
  • the liquid receiving portion 4 receives the chemical liquid discharged from the substrate W.
  • the liquid receiving portion 4 also receives the rinsing liquid discharged from the substrate W.
  • the liquid receiving portion 4 includes a first liquid receiving portion 41 and a second liquid receiving portion 42.
  • the first liquid receiving portion 41 receives the first SPM discharged from the substrate W.
  • the first liquid receiving portion 41 also receives the rinsing liquid discharged from the substrate W.
  • the second liquid receiving portion 42 receives the second SPM discharged from the substrate W.
  • the first circulation section 110 has a first storage section 111, a first circulation pipe 112, a first heating member 113, and a first circulation pump 114.
  • the first storage unit 111 is housed in the first chemical liquid cabinet 101.
  • the first storage unit 111 stores sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide.
  • the chemical liquid stored in the first storage unit 111 (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) is an example of a "third chemical liquid”.
  • the first SPM discharged from the nozzle 2 contains the chemical liquid (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) supplied from the first storage unit 111.
  • the chemical liquid stored in the first storage unit 111 (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) may be referred to as the "first stored chemical liquid".
  • the first circulation unit 110 circulates the first stored chemical liquid through the first storage unit 111.
  • one end of the first circulation pipe 112 is connected to the first storage section 111.
  • the first stored chemical liquid flows into the first circulation pipe 112 from the first storage section 111.
  • the first circulation pipe 112 is a tubular member through which the first stored chemical liquid flows.
  • the other end of the first circulation pipe 112 is connected to the first storage section 111.
  • the first stored chemical liquid that flows from one end of the first circulation pipe 112 to the other end returns to the first storage section 111 and is stored in the first storage section 111.
  • a part of the first circulation pipe 112 is housed in the first chemical liquid cabinet 101.
  • the other part of the first circulation pipe 112 is housed in the fluid box 105 described with reference to FIG. 1.
  • the first heating member 113 is housed in the first chemical liquid cabinet 101.
  • the first heating member 113 is disposed in the first circulation pipe 112 and heats the first stored chemical liquid.
  • the first circulation pump 114 is housed in the first chemical liquid cabinet 101.
  • the first circulation pump 114 pumps the first stored chemical liquid so that the first stored chemical liquid flows through the first circulation pipe 112 from one end to the other end of the first circulation pipe 112.
  • the first heating member 113 and the first circulation pump 114 are controlled by the control device 200 (control unit 201).
  • the second circulation section 150 has a second storage section 151, a second circulation pipe 152, a second heating member 153, and a second circulation pump 154.
  • the second storage section 151 is housed within the second chemical liquid cabinet 103.
  • the second storage section 151 stores new sulfuric acid.
  • the chemical liquid (new sulfuric acid) stored in the second storage section 151 is an example of a "fourth chemical liquid".
  • the second SPM ejected from the nozzle 2 contains the chemical liquid (new sulfuric acid) supplied from the second storage section 151.
  • the chemical liquid (new sulfuric acid) stored in the second storage section 151 may be referred to as the "second stored chemical liquid”.
  • the second circulation section 150 circulates the second stored chemical liquid via the second storage section 151.
  • one end of the second circulation pipe 152 is connected to the second storage section 151.
  • the second stored chemical liquid flows into the second circulation pipe 152 from the second storage section 151.
  • the second circulation pipe 152 is a tubular member through which the second stored chemical liquid flows.
  • the other end of the second circulation pipe 152 is connected to the second storage section 151.
  • the second stored chemical liquid that flows from one end of the second circulation pipe 152 to the other end returns to the second storage section 151 and is stored in the second storage section 151.
  • a part of the second circulation pipe 152 is housed in the second chemical liquid cabinet 103.
  • the other part of the second circulation pipe 152 is housed in the fluid box 105 described with reference to FIG. 1.
  • the second heating member 153 is housed in the second chemical liquid cabinet 103.
  • the second heating member 153 is disposed in the second circulation pipe 152 and heats the second stored chemical liquid.
  • the second heating member 153 heats the second stored chemical liquid to 165°C.
  • the second circulation pump 154 is housed in the second chemical liquid cabinet 103.
  • the second circulation pump 154 pumps the second stored chemical liquid so that the second stored chemical liquid flows through the second circulation pipe 152 from one end to the other end of the second circulation pipe 152.
  • the second heating member 153 and the second circulation pump 154 are controlled by the control device 200 (control unit 201).
  • the first supply line L1, the first supply unit 120, and the second supply unit 160 will be described.
  • the first supply unit 120 has a first supply pipe 121 and a first return pipe 122.
  • the second supply unit 160 has a second supply pipe 161 and a second return pipe 162.
  • the first supply pipe 121 and the first return pipe 122 are housed in the fluid box 105 described with reference to FIG. 1.
  • a portion of the second supply pipe 161 is housed in the fluid box 105.
  • the other portion of the second supply pipe 161 is housed in the chamber 1a.
  • the second return pipe 162 is housed in the fluid box 105.
  • the first supply line L1 includes the second supply pipe 161.
  • the first supply pipe 121 is a tubular member through which the first stored chemical liquid flows. Specifically, one end of the first supply pipe 121 is connected to the first circulation pipe 112. The first stored chemical liquid circulating through the first circulation unit 110 flows into the first supply pipe 121. More specifically, the first stored chemical liquid flows from the first circulation pipe 112 into the first supply pipe 121. The other end of the first supply pipe 121 is connected to the second supply pipe 161 (first supply line L1). When processing the substrate W by the first SPM, the first stored chemical liquid circulating through the first circulation unit 110 flows into the second supply pipe 161 (first supply line L1) via the first supply pipe 121.
  • the first return pipe 122 is a tubular member through which the first stored chemical liquid flows. Specifically, the first return pipe 122 branches off from the first supply pipe 121 and extends to the first circulation pipe 112. That is, one end of the first return pipe 122 is connected to the first supply pipe 121, and the other end of the first return pipe 122 is connected to the first circulation pipe 112.
  • the first stored chemical liquid flows from the first supply pipe 121 into the first return pipe 122.
  • the first return pipe 122 flows the first stored chemical liquid to the first circulation pipe 112 and returns it to the first circulation pipe 112.
  • the second stored chemical liquid circulating through the second circulation section 150 also flows into the second supply pipe 161 (first supply line L1). Specifically, one end of the second supply pipe 161 is connected to the second circulation pipe 152. The other end of the second supply pipe 161 is connected to the nozzle 2. The first supply pipe 121 is connected between one end and the other end of the second supply pipe 161.
  • the second supply pipe 161 is a tubular member, and when substrate processing is performed by the second SPM, the second stored chemical liquid that flows from the second circulation pipe 152 into the second supply pipe 161 is circulated to the nozzle 2. Therefore, when substrate processing is performed by the second SPM, the first supply line L1 supplies the second stored chemical liquid to the nozzle 2.
  • the first supply line L1 supplies the first stored chemical liquid to the nozzle 2.
  • the second supply pipe 161 circulates the second stored chemical liquid flowing from the second circulation pipe 152 to the second supply pipe 161 from the connection point between the second supply pipe 161 and the second circulation pipe 152 to the connection point between the second supply pipe 161 and the first supply pipe 121, and circulates a mixture of the second stored chemical liquid and the first stored chemical liquid from the connection point between the second supply pipe 161 and the first supply pipe 121 to the nozzle 2. Therefore, when the substrate is processed by the first SPM, the first supply line L1 supplies the mixture of the second stored chemical liquid and the first stored chemical liquid to the nozzle 2. Therefore, the second SPM discharged from the nozzle 2 contains a mixture of the second stored chemical liquid and the first stored chemical liquid.
  • the second return pipe 162 is a tubular member through which the second stored chemical liquid flows. Specifically, the second return pipe 162 branches off from the second supply pipe 161 and extends to the second circulation pipe 152. That is, one end of the second return pipe 162 is connected to the second supply pipe 161, and the other end of the second return pipe 162 is connected to the second circulation pipe 152.
  • the second stored chemical liquid flows from the second supply pipe 161 to the second return pipe 162.
  • the second return pipe 162 flows the second stored chemical liquid to the second circulation pipe 152 and returns it to the second circulation pipe 152.
  • the drain line L2 When substrate processing is being performed with the first SPM, the first SPM flows into the drain line L2 from the first liquid receiver 41. As a result, the first SPM is drained. The first SPM is contained in the first stored chemical liquid. Also, when substrate processing is being performed with a rinsing liquid, the rinsing liquid flows into the drain line L2 from the first liquid receiver 41. As a result, the rinsing liquid is drained.
  • the drain line L2 includes a drain pipe 21.
  • the drain pipe 21 is a tubular member through which the first SPM and the rinse liquid flow.
  • the first SPM flows into the drain pipe 21.
  • the rinse liquid flows into the drain pipe 21.
  • the drain line L2 (drain pipe 21) causes the first SPM and the rinse liquid to flow into a pipe connected to a waste liquid facility of the factory in which the substrate processing apparatus 100 is installed. A portion of the drain pipe 21 is housed in the fluid box 105 described with reference to FIG. 1.
  • the recovery unit 30 includes a recovery line L3.
  • the second SPM flows into the recovery line L3 from the second liquid receiving unit 42.
  • the recovery line L3 guides the second SPM to the first storage unit 111. Therefore, the first storage unit 111 stores sulfuric acid (new liquid) in the initial state, and stores a mixture of sulfuric acid and hydrogen peroxide as the second SPM is recovered by the recovery line L3.
  • the recovery section 30 has a first recovery pipe 31, a recovery tank 32, a second recovery pipe 33, and a recovery pump 34.
  • the recovery line L3 includes the first recovery pipe 31, the second recovery pipe 33, and the recovery pump 34.
  • a portion of the first recovery pipe 31 is housed in the fluid box 105 described with reference to FIG. 1.
  • Another portion of the first recovery pipe 31 is housed in the first chemical liquid cabinet 101.
  • the recovery tank 32, the second recovery pipe 33, and the recovery pump 34 are housed in the first chemical liquid cabinet 101.
  • the first recovery pipe 31 is a tubular member through which the second SPM flows.
  • the second SPM flows into the first recovery pipe 31.
  • the first recovery pipe 31 causes the second SPM to flow up to the recovery tank 32.
  • the second SPM is stored in the recovery tank 32.
  • the recovery pump 34 is disposed in the second recovery pipe 33.
  • the second SPM flows into the second recovery pipe 33 from the recovery tank 32.
  • the recovery pump 34 pumps the second SPM so that the second SPM flows through the second recovery pipe 33 from one end to the other end of the second recovery pipe 33.
  • the recovery pump 34 is controlled by the control device 200 (control section 201).
  • the concentration measuring unit 130 measures the concentration of sulfuric acid contained in the first stored chemical liquid. Specifically, as shown in FIG. 2, the concentration measuring unit 130 has a branch pipe 131 and a concentration meter 132. The branch pipe 131 and the concentration meter 132 are housed in the first chemical liquid cabinet 101.
  • the branch pipe 131 branches off from the first circulation pipe 112 and extends to the first storage section 111. Therefore, the first stored chemical liquid flows from the first circulation pipe 112 into the branch pipe 131. The first stored chemical liquid that flows into the branch pipe 131 is returned to the first storage section 111 by the branch pipe 131.
  • the concentration meter 132 is disposed in the branch pipe 131 and measures the concentration of sulfuric acid contained in the first stored chemical liquid flowing through the branch pipe 131. The measurement result of the sulfuric acid concentration is input to the control device 200 (control section 201).
  • the first replenishing unit 140 replenishing the first storage unit 111 with new sulfuric acid.
  • the first replenishing unit 140 is controlled by the control device 200 (control unit 201). For example, when the concentration of sulfuric acid contained in the first stored chemical liquid becomes equal to or lower than a first set value, the control device 200 (control unit 201) causes the first replenishing unit 140 to replenishing the first storage unit 111 with sulfuric acid (new liquid) to maintain the concentration of sulfuric acid contained in the first stored chemical liquid at a predetermined value.
  • control device 200 causes the first replenishing unit 140 to replenishing the first storage unit 111 with sulfuric acid (new liquid).
  • the first replenishment section 140 has a first replenishment pipe 141 and a first replenishment on-off valve 142.
  • the first replenishment pipe 141 is connected to the power equipment of the factory in which the substrate processing apparatus 100 is installed. A part of the first replenishment pipe 141 is housed in the first chemical liquid cabinet 101.
  • the first replenishment pipe 141 is a tubular member through which sulfuric acid flows, and causes the sulfuric acid to flow to the first storage section 111.
  • the first replenishment on-off valve 142 is disposed in the first replenishment pipe 141.
  • the first replenishment on-off valve 142 controls the supply and stop of the supply of sulfuric acid from the first replenishment pipe 141 to the first storage section 111.
  • the first replenishment on-off valve 142 may be disposed outside the first chemical liquid cabinet 101 or may be housed inside the first chemical liquid cabinet 101.
  • the actuator of the first replenishment on-off valve 142 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the first refill valve 142 is controlled by the control device 200 (control unit 201).
  • the recovered second SPM flows into the first storage section 111. Since the second SPM is a mixture of sulfuric acid and hydrogen peroxide, the flow of the second SPM into the first storage section 111 reduces the concentration of sulfuric acid contained in the first stored chemical solution.
  • the control device 200 opens the first refill on-off valve 142.
  • sulfuric acid new liquid
  • the control device 200 closes the first refill on-off valve 142.
  • the concentration of sulfuric acid contained in the first stored chemical liquid is maintained at a predetermined value.
  • the concentration of sulfuric acid in the new liquid is, for example, 96% or 98%.
  • the first set value is, for example, 90% or 89%.
  • the first stored chemical liquid used in substrate processing with the first SPM is drained. Therefore, depending on the balance between the amount of the second SPM flowing in and the amount of the first stored chemical liquid drained, the amount of the first stored chemical liquid stored in the first storage section 111 may decrease.
  • the control device 200 opens the first replenishment on-off valve 142 when the amount of the first stored chemical liquid stored in the first storage unit 111 falls below the second set value.
  • sulfuric acid new liquid
  • the control device 200 closes the first replenishment on-off valve 142 when the amount of the first stored chemical liquid stored in the first storage unit 111 reaches a third set value.
  • the third set value indicates a value greater than the second set value.
  • the first storage unit 111 is provided with a level meter (not shown) that detects a value corresponding to the amount of the first stored chemical liquid stored in the first storage unit 111.
  • the control device 200 determines whether the amount of the first stored chemical liquid stored in the first storage unit 111 is equal to or less than the second set value based on the detection result of the level meter.
  • the resist film residue is also discharged from the substrate W. Therefore, the cleanliness of the first stored chemical liquid may be reduced due to the resist film residue.
  • the control device 200 executes a liquid exchange process to exchange the first stored chemical liquid stored in the first storage unit 111 with fresh sulfuric acid liquid, for example at regular time intervals. Specifically, the control device 200 (control unit 201) opens the first replenishment opening/closing valve 142 after discharging the first stored chemical liquid in the first storage unit 111 from a drainage line (not shown) connected to the first storage unit 111. As a result, sulfuric acid (fresh liquid) is replenished from the first replenishment piping 141 to the first storage unit 111. The control device 200 (control unit 201) closes the first replenishment opening/closing valve 142 when the amount of sulfuric acid (fresh liquid) in the first storage unit 111 reaches a third set value.
  • the second replenishing unit 170 replenishes new sulfuric acid solution to the second storage unit 151.
  • the second replenishing unit 170 is controlled by the control device 200 (control unit 201). For example, when the amount of the second stored chemical solution stored in the second storage unit 151 falls below a fourth set value, the control device 200 (control unit 201) causes the second replenishing unit 170 to replenish sulfuric acid (new solution) to the second storage unit 151.
  • the second replenishment section 170 has a second replenishment pipe 171 and a second replenishment on-off valve 172.
  • the second replenishment pipe 171 is connected to the power utility equipment of the factory in which the substrate processing apparatus 100 is installed. A portion of the second replenishment pipe 171 is housed in the second chemical cabinet 103.
  • the second replenishment pipe 171 is a tubular member through which sulfuric acid flows, and causes the sulfuric acid to flow to the second storage section 151.
  • the second replenishment on-off valve 172 is disposed in the second replenishment pipe 171.
  • the second replenishment on-off valve 172 controls the supply and stop of sulfuric acid from the second replenishment pipe 171 to the second storage section 151.
  • the second replenishment on-off valve 172 may be disposed outside the second chemical cabinet 103 or may be housed inside the second chemical cabinet 103.
  • the actuator of the second replenishment on-off valve 172 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the second refill valve 172 is controlled by the control device 200 (control unit 201).
  • the second storage section 151 is not connected to the recovery line L3. Therefore, the amount of the second stored chemical liquid stored in the second storage section 151 decreases each time a substrate is processed by the second SPM.
  • the control device 200 opens the second replenishment on-off valve 172 when the amount of the second stored chemical liquid stored in the second storage unit 151 falls below the fourth set value.
  • sulfuric acid new liquid
  • the control device 200 closes the second replenishment on-off valve 172 when the amount of the second stored chemical liquid stored in the second storage unit 151 reaches the fifth set value.
  • the fifth set value indicates a value greater than the fourth set value.
  • the second storage unit 151 is provided with a level meter (not shown) that detects a value corresponding to the amount of the second stored chemical liquid stored in the second storage unit 151.
  • the control device 200 determines whether the amount of the second stored chemical liquid stored in the second storage unit 151 is equal to or less than the fourth set value based on the detection result of the level meter.
  • FIG. 3 is a diagram showing the configuration of the first supply unit 120 and the second supply unit 160 included in the substrate processing apparatus 100 of this embodiment.
  • the first supply unit 120 further includes a first flow meter 123, a first flow control valve 124, a first supply on-off valve 125, and a first return on-off valve 126.
  • the first flow meter 123, the first flow control valve 124, the first supply on-off valve 125, and the first return on-off valve 126 are housed in the fluid box 105 described with reference to FIG. 1.
  • the first flow meter 123, the first flow control valve 124, and the first supply on-off valve 125 are arranged in the first supply pipe 121.
  • the first flow meter 123, the first flow control valve 124, and the first supply on-off valve 125 are arranged in this order from the upstream side to the downstream side of the first supply pipe 121.
  • the first flowmeter 123 measures the flow rate of the first stored chemical liquid flowing through the first supply pipe 121.
  • the measurement results of the first flowmeter 123 are input to the control device 200 (control unit 201).
  • the first flow rate control valve 124 adjusts the flow rate of the first stored chemical liquid flowing through the first supply pipe 121.
  • the opening degree of the first flow rate control valve 124 can be adjusted, and the flow rate of the first stored chemical liquid is a magnitude according to the opening degree of the first flow rate control valve 124.
  • the actuator of the first flow rate control valve 124 is, for example, an electric actuator.
  • the first flow rate control valve 124 may be, for example, a motor needle valve.
  • the opening degree of the first flow rate adjustment valve 124 is controlled by the control device 200 (control unit 201).
  • the control device 200 adjusts the opening degree of the first flow rate adjustment valve 124 based on the measurement result of the first flow meter 123.
  • the first supply on-off valve 125 controls the supply and stop of the first stored chemical liquid from the first supply pipe 121 to the second supply pipe 161 (first supply line L1).
  • the actuator of the first supply on-off valve 125 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the first supply on-off valve 125 is controlled by the control device 200 (control unit 201).
  • the first supply on-off valve 125 is an example of a "switching unit.”
  • the first return on-off valve 126 is disposed in the first return pipe 122. One end of the first return pipe 122 is connected to the first supply pipe 121 between the first flow rate control valve 124 and the first supply on-off valve 125.
  • the first return on-off valve 126 controls the supply and stop of the first stored chemical liquid from the first return pipe 122 to the first circulation pipe 112 (first circulation section 110).
  • the actuator of the first return on-off valve 126 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the first return on-off valve 126 is controlled by the control device 200 (control section 201).
  • the second supply unit 160 further includes a third heating member 163, a second flow meter 164, a second flow control valve 165, a second supply on-off valve 166, and a second return on-off valve 167.
  • the third heating member 163, the second flow meter 164, the second flow control valve 165, the second supply on-off valve 166, and the second return on-off valve 167 are housed in the fluid box 105 described with reference to FIG. 1.
  • the third heating element 163, the second flow meter 164, the second flow control valve 165, and the second supply on-off valve 166 are arranged in the second supply pipe 161. More specifically, the third heating element 163, the second flow meter 164, the second flow control valve 165, and the second supply on-off valve 166 are arranged in this order from the upstream side to the downstream side of the second supply pipe 161.
  • the first supply pipe 121 is connected to the second supply pipe 161 upstream of the third heating element 163.
  • the third heating member 163 heats the chemical liquid flowing through the second supply pipe 161. More specifically, the third heating member 163 heats the mixture of the first and second stored chemical liquids when performing substrate processing with the first SPM. The third heating member 163 also heats the second stored chemical liquid when performing substrate processing with the second SPM. For example, the third heating member 163 heats the chemical liquids flowing through the second supply pipe 161 (the mixture of the first and second stored chemical liquids, and the second stored chemical liquid) to 170°C.
  • the mixture of the first and second stored chemical liquids may be referred to as the "stored mixed liquid.”
  • the second flowmeter 164 measures the flow rate of the chemical liquid (the second stored liquid and the stored mixed liquid) flowing through the second supply pipe 161.
  • the measurement results of the second flowmeter 164 are input to the control device 200 (control unit 201).
  • the second flow rate control valve 165 adjusts the flow rate of the chemical liquid (second stored liquid and stored mixed liquid) flowing through the second supply pipe 161.
  • the second flow rate control valve 165 is capable of adjusting its opening, and the flow rate of the chemical liquid (second stored liquid and stored mixed liquid) flowing through the second supply pipe 161 corresponds to the opening rate of the second flow rate control valve 165.
  • the actuator of the second flow rate control valve 165 is, for example, an electric actuator.
  • the second flow rate control valve 165 may be, for example, a motor needle valve.
  • the opening degree of the second flow rate adjustment valve 165 is controlled by the control device 200 (control unit 201).
  • the control device 200 adjusts the opening degree of the second flow rate adjustment valve 165 based on the measurement result of the second flow meter 164.
  • the second supply on-off valve 166 controls the supply and stop of the chemical liquid (the second stored chemical liquid and the stored mixed liquid) from the second supply pipe 161 to the nozzle 2.
  • the actuator of the second supply on-off valve 166 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the second supply on-off valve 166 is controlled by the control device 200 (control unit 201).
  • the second return on-off valve 167 is disposed in the second return pipe 162. One end of the second return pipe 162 is connected to the second supply pipe 161 between the second flow rate control valve 165 and the second supply on-off valve 166.
  • the second return on-off valve 167 controls the supply and stop of the second stored chemical liquid from the second return pipe 162 to the second circulation pipe 152 (second circulation section 150).
  • the actuator of the second return on-off valve 167 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the second return on-off valve 167 is controlled by the control device 200 (control section 201).
  • Figure 3 shows the first supply unit 120 and the second supply unit 160 when substrate processing by the first SPM and substrate processing by the second SPM are not being performed.
  • the control device 200 closes the first supply on-off valve 125 and the second supply on-off valve 166 and opens the first return on-off valve 126 and the second return on-off valve 167.
  • the first stored chemical liquid that flows from the first circulation pipe 112 to the first supply pipe 121 returns to the first circulation pipe 112 via the first return pipe 122.
  • the second stored chemical liquid that flows from the second circulation pipe 152 to the second supply pipe 161 returns to the second circulation pipe 152 via the second return pipe 162.
  • FIG. 4 is a diagram showing the first supply unit 120 and the second supply unit 160 when substrate processing is being performed by the first SPM.
  • the control device 200 controls the first supply on-off valve 125 and the second supply on-off valve 166, and closes the first return on-off valve 126 and the second return on-off valve 167.
  • the first stored chemical liquid flows into the second supply pipe 161, and a mixture of the first and second stored chemical liquids (stored mixed liquid) is supplied to the nozzle 2 via the second supply pipe 161.
  • the third heating element 163 heats the mixture (reserved mixed liquid) of the first and second stored chemical liquids to 170°C.
  • the control device 200 also adjusts the opening degree of the first flow rate adjustment valve 124 and the opening degree of the second flow rate adjustment valve 165 so that the flow rate of the mixture (reserved mixed liquid) of the first and second stored chemical liquids circulating through the second supply pipe 161 becomes the first predetermined flow rate.
  • FIG. 5 is a diagram showing the first supply unit 120 and the second supply unit 160 when the substrate is processed by the second SPM.
  • the control device 200 closes the first supply on-off valve 125, opens the second supply on-off valve 166, opens the first return on-off valve 126, and closes the second return on-off valve 167.
  • the first stored chemical liquid that flows from the first circulation pipe 112 to the first supply pipe 121 returns to the first circulation pipe 112 via the first return pipe 122.
  • the second stored chemical liquid that flows from the second circulation pipe 152 to the second supply pipe 161 is supplied to the nozzle 2 via the second supply pipe 161.
  • control device 200 adjusts the opening of the second flow rate adjustment valve 165 so that the flow rate of the second stored chemical liquid flowing through the second supply pipe 161 becomes a second predetermined flow rate.
  • FIG. 6 is a cross-sectional view that shows a schematic configuration of the substrate processing unit 1 included in the substrate processing apparatus 100 of this embodiment.
  • the substrate processing unit 1 further includes a substrate holding unit 5, a substrate rotating unit 6, a first lifting unit 7, a second lifting unit 8, and a nozzle moving mechanism 10.
  • the substrate processing apparatus 100 further includes a second supply line L4 and a third supply line L5.
  • Chamber 1a further accommodates a substrate holder 5, a substrate rotator 6, a first lifting unit 7, a second lifting unit 8, a nozzle movement mechanism 10, a portion of the second supply line L4, and a portion of the third supply line L5.
  • the substrate holding unit 5 holds the substrate W.
  • the substrate holding unit 5 is controlled by the control device 200 (control unit 201). More specifically, the substrate holding unit 5 holds the substrate W in a horizontal position.
  • the substrate holding unit 5 is, for example, a spin chuck.
  • the substrate holding unit 5 may have a spin base 51 and multiple chuck members 53.
  • the spin base 51 is approximately disk-shaped and supports multiple chuck members 53 in a horizontal position.
  • the multiple chuck members 53 are arranged on the peripheral portion of the spin base 51.
  • the multiple chuck members 53 clamp the peripheral portion of the substrate W.
  • the multiple chuck members 53 hold the substrate W in a horizontal position.
  • the multiple chuck members 53 are controlled by the control device 200 (control unit 201).
  • the multiple chuck members 53 are arranged so that the center of the substrate W coincides with the center of the spin base 51.
  • the substrate rotation unit 6 rotates the substrate W and the substrate holder 5 together around a rotation axis AX1 that extends vertically.
  • the substrate rotation unit 6 is controlled by the control device 200 (control unit 201).
  • the substrate rotation unit 6 rotates the spin base 51 around the rotation axis AX1. Therefore, the spin base 51 rotates around the rotation axis AX1. As a result, the substrate W held by the substrate holding unit 5 rotates around the rotation axis AX1.
  • the substrate rotation unit 6 has, for example, a motor body 61 and a shaft 63.
  • the shaft 63 is coupled to the spin base 51.
  • the motor body 61 rotates the shaft 63.
  • the spin base 51 rotates.
  • the motor body 61 is controlled by the control device 200 (control unit 201).
  • the first liquid receiving portion 41 As shown in FIG. 6, the first liquid receiving portion 41 is disposed inside the second liquid receiving portion 42.
  • the first liquid receiving portion 41 has a first guard portion 411 and a first cup portion 412.
  • the first guard part 411 is substantially cylindrical and surrounds the substrate holding part 5 and the substrate rotating part 6, and is disposed around the substrate holding part 5 and the substrate rotating part 6.
  • the first guard part 411 receives the first SPM and rinsing liquid that are scattered from the rotating substrate W.
  • the first cup portion 412 is disposed on the lower end side of the first guard portion 411.
  • the first cup portion 412 forms an annular groove below the lower end of the first guard portion 411.
  • the first cup portion 412 collects the first SPM and rinsing liquid that flow down from the inner surface of the first guard portion 411.
  • the drainage pipe 21 of the drainage line L2 is connected to the bottom of the first cup portion 412. The first SPM and rinsing liquid collected in the first cup portion 412 flow into the drainage pipe 21.
  • the second liquid receiving section 42 has a second guard section 421 and a second cup section 422.
  • the second guard section 421 is substantially cylindrical and surrounds the first guard section 411, and is disposed around the first guard section 411.
  • the second guard section 421 receives the second SPM scattered from the rotating substrate W.
  • the second cup section 422 is disposed on the lower end side of the second guard section 421.
  • the second cup section 422 forms an annular groove below the lower end of the second guard section 421.
  • the second cup section 422 collects the second SPM that flows down from the inner peripheral surface of the second guard section 421.
  • the first recovery pipe 31 of the recovery line L3 is connected to the bottom of the second cup section 422. The second SPM collected in the second cup section 422 flows into the first recovery pipe 31.
  • the liquid receiving portion 4 further includes a third liquid receiving portion 43.
  • the third liquid receiving portion 43 is a guard portion. A detailed description of the third liquid receiving portion 43 will be omitted.
  • the first lifting unit 7 raises and lowers the first guard portion 411, the second guard portion 421, and the third liquid receiving portion 43 (guard portion) individually.
  • the first lifting unit 7 is controlled by the control device 200 (control unit 201). Specifically, the first lifting unit 7 raises and lowers the first guard portion 411, the second guard portion 421, and the third liquid receiving portion 43 (guard portion) individually between the liquid receiving position and the first retracted position.
  • the liquid receiving position is a position above the first retracted position.
  • the first lifting unit 7 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
  • the second supply line L4 supplies hydrogen peroxide to the nozzle 2.
  • the second supply line L4 has a third supply pipe 181 and a third supply on-off valve 182.
  • the third supply pipe 181 is a tubular member through which hydrogen peroxide flows, and causes the hydrogen peroxide to flow up to the nozzle 2.
  • the third supply on-off valve 182 is disposed in the third supply pipe 181 and controls the supply and stop of hydrogen peroxide to the nozzle 2.
  • the actuator of the third supply on-off valve 182 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the third supply on-off valve 182 is controlled by the control device 200 (control unit 201). Specifically, the control device 200 (control unit 201) opens the third supply on-off valve 182 when performing substrate processing with the first SPM. The control device 200 (control unit 201) also opens the third supply on-off valve 182 when performing substrate processing with the second SPM.
  • the first supply line L1 supplies a mixture (reserved mixture) of the first and second stored chemical liquids to nozzle 2, and the second supply line L4 supplies hydrogen peroxide to nozzle 2.
  • the first supply line L1 supplies the second stored chemical liquid to nozzle 2, and the second supply line L4 supplies hydrogen peroxide to nozzle 2.
  • the chemical liquid supplied from the first supply line L1 and the chemical liquid supplied from the second supply line L4 are mixed inside the nozzle 2. Therefore, when processing a substrate with the first SPM, the nozzle 2 ejects a mixture (first SPM) of the stored mixed liquid (a mixture of the first stored chemical liquid and the second stored chemical liquid) and hydrogen peroxide solution toward the substrate W. Also, when processing a substrate with the second SPM, the nozzle 2 ejects a mixture (second SPM) of the second stored chemical liquid (fresh sulfuric acid solution) and hydrogen peroxide solution toward the substrate W. In detail, the nozzle 2 ejects the first SPM from above the rotating substrate W toward the top surface of the substrate W. Similarly, the nozzle 2 ejects the second SPM from above the rotating substrate W toward the top surface of the substrate W.
  • the nozzle movement mechanism 10 moves the nozzle 2 along a horizontal plane.
  • the nozzle movement mechanism 10 is controlled by the control device 200 (control unit 201). More specifically, the nozzle movement mechanism 10 moves the nozzle 2 between a second retracted position and a first processing position.
  • the second retracted position is a position included in an area outside the substrate holding unit 5.
  • the second retracted position may be a position included in an area outside the liquid receiving unit 4.
  • the first processing position is a position opposite the center of the substrate W.
  • the nozzle 2 supplies the first SPM and the second SPM to the substrate W from the first processing position.
  • the nozzle movement mechanism 10 may have a nozzle arm 11, a nozzle base 13, and a nozzle movement part 15.
  • the nozzle base 13 extends vertically.
  • the base end of the nozzle arm 11 is connected to the nozzle base 13.
  • the nozzle arm 11 extends horizontally from the nozzle base 13.
  • the nozzle arm 11 supports the nozzle 2.
  • the nozzle 2 protrudes vertically downward from the nozzle arm 11.
  • the nozzle 2 may be disposed at the tip of the nozzle arm 11.
  • the nozzle moving unit 15 rotates the nozzle base 13 around a rotation axis AX2 that extends vertically. As a result, the nozzle 2 moves in a circumferential direction around the rotation axis AX2.
  • the nozzle moving unit 15 is controlled by the control device 200 (control unit 201).
  • the nozzle moving unit 15 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
  • the second lifting unit 8 raises and lowers the opposing member 3.
  • the second lifting unit 8 is controlled by the control device 200 (control unit 201). Specifically, the second lifting unit 8 raises and lowers the opposing member 3 between the second processing position and the third retracted position.
  • the third retracted position is a position above the second processing position.
  • the second lifting unit 8 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.
  • the opposing member 3 supplies rinsing liquid to the substrate W from the second processing position.
  • the third supply line L5 supplies rinsing liquid to the opposing member 3.
  • the third supply line L5 has a fourth supply pipe 191 and a fourth supply on-off valve 192.
  • the opposing member 3 has a nozzle 3a.
  • the fourth supply pipe 191 is a tubular member through which the rinsing liquid flows, and causes the rinsing liquid to flow up to the nozzle 3a.
  • the fourth supply on-off valve 192 is disposed on the fourth supply pipe 191 and controls the supply and stop of the rinsing liquid to the nozzle 3a.
  • the actuator of the fourth supply on-off valve 192 is, for example, a pneumatic actuator or an electric actuator.
  • the opening and closing of the fourth supply on-off valve 192 is controlled by the control device 200 (control unit 201). Specifically, the control device 200 (control unit 201) opens the fourth supply on-off valve 192 when supplying the rinsing liquid to the substrate W.
  • the nozzle 3a ejects the rinsing liquid from above the rotating substrate W toward the top surface of the substrate W.
  • Figure 6 shows the substrate processing unit 1 when performing substrate processing by the first SPM.
  • control device 200 controls the nozzle movement mechanism 10 to move the nozzle 2 to the first processing position.
  • the control device 200 also controls the first lifting unit 7 to move the first guard unit 411, the second guard unit 421, and the third liquid receiving unit 43 to the liquid receiving position.
  • the upper end of the first guard unit 411 placed at the liquid receiving position is positioned above the substrate W held by the substrate holding unit 5. As a result, the first SPM discharged from the substrate W is received by the first guard unit 411.
  • the upper end of the second guard unit 421 is positioned above the upper end of the first guard unit 411, and the upper end of the third liquid receiving unit 43 (guard unit) is positioned above the upper end of the second guard unit 421.
  • control device 200 controls the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 described with reference to Figures 3 to 5 so that the mixture ratio of sulfuric acid and hydrogen peroxide solution becomes a first mixture ratio.
  • the first mixture ratio is, for example, 3:1 to 5:1.
  • FIG. 7 is a diagram showing the substrate processing unit 1 when substrate processing is performed by the second SPM. Substrate processing by the second SPM is performed after substrate processing by the first SPM.
  • the control device 200 controls the first lifting unit 7 to move the first guard unit 411 from the liquid receiving position to the first retracted position, and maintains the positions of the second guard unit 421 and the third liquid receiving unit 43 at the liquid receiving positions.
  • the upper end of the first guard unit 411 is positioned below the substrate W held by the substrate holding unit 5.
  • the upper end of the second guard unit 421 is positioned above the substrate W held by the substrate holding unit 5.
  • the second SPM discharged from the substrate W is received by the second guard unit 421.
  • control device 200 controls the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 described with reference to Figures 3 to 5 so that the mixture ratio of sulfuric acid to hydrogen peroxide solution becomes the second mixture ratio.
  • the second mixture ratio is greater than the first mixture ratio. Therefore, the concentration of sulfuric acid in the second SPM is greater than that in the first SPM.
  • the second mixture ratio is, for example, 20:1.
  • first SPM SPM with a low concentration of sulfuric acid
  • second SPM SPM with a high concentration of sulfuric acid
  • FIG. 8 is a diagram showing the substrate processing unit 1 when supplying the rinsing liquid to the substrate W.
  • the substrate processing with the rinsing liquid is performed after the substrate processing with the second SPM.
  • the control device 200 controls the first lifting unit 7 to move the first guard unit 411 from the first retracted position to the liquid receiving position, and maintains the positions of the second guard unit 421 and the third liquid receiving unit 43 at the liquid receiving position.
  • the control device 200 (control unit 201) also controls the nozzle moving mechanism 10 to move the nozzle 2 from the first processing position to the second retracted position.
  • the control device 200 (control unit 201) controls the second lifting unit 8 to move the opposing member 3 from the third retracted position to the second processing position.
  • the opposing member 3 that has moved to the second processing position covers the substrate W from above. As a result, the substrate W is shielded from above by the opposing member 3. The substrate W is also surrounded by the liquid receiving portion 4 and the opposing member 3. The rinsing liquid is ejected from the opposing member 3 (nozzle 3a) that has moved to the second processing position toward the top surface of the substrate W.
  • the recovered SPM (second SPM) is used only for the first SPM, and is not used for the second SPM. Therefore, compared to a configuration in which the recovered SPM is used for both the first SPM and the second SPM, the cleanliness of the substrate W after substrate processing is less likely to decrease.
  • fresh sulfuric acid solution is used for the second SPM. Therefore, the cleanliness of the substrate W after the substrate processing is further prevented from deteriorating. Furthermore, because fresh sulfuric acid solution is used for the second SPM to be recovered, the cleanliness of the first SPM is further prevented from deteriorating. Therefore, the cleanliness of the substrate W after the substrate processing is further prevented from deteriorating.
  • the collected second SPM is discharged during substrate processing by the first SPM. Therefore, the cleanliness of the first SPM is further prevented from decreasing. Therefore, the cleanliness of the substrate W after substrate processing is further prevented from decreasing.
  • the first SPM used to remove the hardened layer of the resist film is not recovered, and the second SPM used to remove the resist film residue is recovered, so the cleanliness of the first SPM is less likely to decrease. Therefore, the cleanliness of the substrate W after substrate processing is less likely to decrease.
  • the cleanliness of the first stored medicinal liquid in the first storage section 111 is unlikely to decrease, so the frequency of liquid replacement processing in the first storage section 111 can be reduced. This makes it possible to conserve resources.
  • the first storage section 111 stores fresh sulfuric acid (concentration 96% or 98%).
  • the substrate processing apparatus 100 may start processing the substrate W to be processed after the concentration of the sulfuric acid stored in the first storage section 111 stabilizes within a predetermined range (e.g., 89% or more and 90% or less). For example, the substrate processing apparatus 100 may perform substrate processing on a dummy substrate until the concentration of the sulfuric acid stored in the first storage section 111 stabilizes within the predetermined range.
  • the substrate processing apparatus 100 removed a resist film from the substrate W. More specifically, the substrate processing apparatus 100 of this embodiment removed a portion of the hardened layer of the resist film from the substrate W, and then removed the resist film residue from the substrate W.
  • the substrate processing apparatus according to the present invention is not limited to an apparatus that removes a resist film.
  • the substrate processing apparatus to which the present invention is applicable is not particularly limited as long as it is an apparatus that processes a substrate by supplying the same type of first and second chemical liquids to the substrate.
  • the present invention is applicable to an apparatus that removes organic matter from a substrate after CMP processing.
  • the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 are controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the first mixture ratio, but the flow rate of the hydrogen peroxide may be controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the first mixture ratio. Similarly, the flow rate of the hydrogen peroxide may be controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the second mixture ratio.
  • a mixture (reserved mixture) of the first and second stored chemical liquids is supplied to the nozzle 2 during substrate processing by the first SPM, but of the first and second stored chemical liquids, only the first stored chemical liquid may be supplied to the nozzle 2 during substrate processing by the first SPM.
  • a supply line for circulating the first stored chemical liquid to the nozzle 2 may be provided in addition to the first supply line L1.
  • a heating member for heating the first stored chemical liquid to 170°C is provided in the supply line for circulating the first stored chemical liquid to the nozzle 2.
  • the first SPM and the second SPM are ejected exclusively from nozzle 2, but the first SPM and the second SPM may be ejected from different nozzles.
  • the substrate holding unit 5 is a clamping chuck, but the substrate holding unit 5 is not limited to a clamping chuck.
  • the substrate holding unit 5 may be a vacuum chuck.
  • the present invention is useful for substrate processing devices and has industrial applicability.
  • Substrate processing unit 2 Nozzle 4: Liquid receiving unit 21: Drainage pipe 30: Recovery unit 31: First recovery pipe 32: Recovery tank 33: Second recovery pipe 34: Recovery pump 41: First liquid receiving unit 42: Second liquid receiving unit 100: Substrate processing unit 101: First chemical liquid cabinet 103: Second chemical liquid cabinet 105: Fluid box 110: First circulation unit 111: First storage unit 112: First circulation pipe 120: First supply unit 121: First supply pipe 122: First return pipe 123: First flow meter 124: First flow rate adjustment valve 125: First supply opening/closing valve 126: First return opening/closing valve 150: Second circulation unit 151: Second storage unit 152: Second circulation pipe 153: Second heating member 154 : Second circulation pump 160 : Second supply section 161 : Second supply pipe 162 : Second return pipe 163 : Third heating member 164 : Second flow meter 165 : Second flow rate adjustment valve 166 : Second supply on-off valve 167 : Second return on-off valve 200 : Control device

Abstract

A substrate treatment device (100) includes a nozzle (2), a first liquid receiver (41), a second liquid receiver (42), a drainage line (L2), a collection line (L3), a first reservoir (111), and a second reservoir (151). The nozzle (2) exclusively ejects a first liquid chemical and a second liquid chemical toward a substrate (W). The first liquid receiver (41) receives the first liquid chemical discharged from the substrate (W). The second liquid receiver (42) receives the second liquid chemical discharged from the substrate (W). The first liquid chemical from the first liquid receiver (41) flows into the drainage line (L2). The second liquid chemical from the second liquid receiver (42) flows into the collection line (L3). The first reservoir (111) reserves a third liquid chemical to be contained in the first liquid chemical. The second reservoir (151) reserves a fourth liquid chemical to be contained in the second liquid chemical. The first liquid chemical and the second liquid chemical are of the same kind. The collection line (L3) leads the second liquid chemical to the first reservoir (111).

Description

基板処理装置Substrate Processing Equipment
　本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
　特許文献１に、基板から効率よくレジストを除去しながら、硫酸の濃度が高いＳＰＭ（硫酸過酸化水素水溶液：Ｓｕｌｆｕｒｉｃ　Ａｃｉｄ　Ｈｙｄｒｏｇｅｎ　Ｐｅｒｏｘｉｄｅ　Ｍｉｘｔｕｒｅ）を回収する基板処理装置が開示されている。ＳＰＭは、硫酸と過酸化水素水との混合液である。特許文献１の基板処理装置は、第１ＳＰＭを基板に供給した後、硫酸と過酸化水素との混合比が第１ＳＰＭよりも大きい第２ＳＰＭを基板に供給して、基板からレジストを除去する。 Patent Document 1 discloses a substrate processing apparatus that efficiently removes resist from a substrate while recovering SPM (Sulfuric Acid Hydrogen Peroxide Mixture) with a high concentration of sulfuric acid. SPM is a mixture of sulfuric acid and hydrogen peroxide. The substrate processing apparatus of Patent Document 1 supplies a first SPM to the substrate, and then supplies a second SPM, which has a higher mixture ratio of sulfuric acid and hydrogen peroxide than the first SPM, to the substrate to remove resist from the substrate.
　具体的には、特許文献１の基板処理装置は、基板から排出される第１ＳＰＭを排液配管に流入させ、基板から排出される第２ＳＰＭを回収配管に流入させる。特許文献１の基板処理装置は、回収タンクと、硫酸タンクと、ノズルとを備える。回収配管は、第２ＳＰＭを回収タンクに貯留させる。回収タンク内の第２ＳＰＭは、送液配管を介して硫酸タンクに送液される。硫酸タンク内の硫酸の濃度が下限値以下になると、硫酸の新液が硫酸タンクに補充される。硫酸タンク内の薬液は、硫酸配管を介してノズルに供給される。ノズルには更に、過酸化水素水配管を介して過酸化水素水が供給される。ノズルにおいて、硫酸タンクから供給された薬液と過酸化水素とが混合されて、第１ＳＰＭ又は第２ＳＰＭが作成される。詳しくは、特許文献１の基板処理装置は、硫酸配管に配置された硫酸流量調整バルブと、過酸化水素水配管に配置された過酸化水素水流量調整バルブとのうちの少なくとも一方を制御して、硫酸タンクから供給された薬液と過酸化水素との混合比を調整することで、第１ＳＰＭ又は第２ＳＰＭを作成する。 Specifically, the substrate processing apparatus of Patent Document 1 allows the first SPM discharged from the substrate to flow into a drainage pipe, and allows the second SPM discharged from the substrate to flow into a recovery pipe. The substrate processing apparatus of Patent Document 1 includes a recovery tank, a sulfuric acid tank, and a nozzle. The recovery pipe stores the second SPM in the recovery tank. The second SPM in the recovery tank is sent to the sulfuric acid tank via a liquid supply pipe. When the concentration of sulfuric acid in the sulfuric acid tank falls below a lower limit, new sulfuric acid is replenished in the sulfuric acid tank. The chemical solution in the sulfuric acid tank is supplied to the nozzle via the sulfuric acid pipe. Hydrogen peroxide is further supplied to the nozzle via a hydrogen peroxide pipe. In the nozzle, the chemical solution supplied from the sulfuric acid tank and hydrogen peroxide are mixed to create the first SPM or the second SPM. In detail, the substrate processing apparatus of Patent Document 1 creates the first SPM or the second SPM by controlling at least one of the sulfuric acid flow rate adjustment valve arranged in the sulfuric acid piping and the hydrogen peroxide flow rate adjustment valve arranged in the hydrogen peroxide piping to adjust the mixture ratio of the chemical solution supplied from the sulfuric acid tank and the hydrogen peroxide.
特開２０１９－１７６１２５号公報JP 2019-176125 A
　しかしながら、特許文献１の基板処理装置は、回収タンクに回収された第２ＳＰＭを用いて、第１ＳＰＭ及び第２ＳＰＭの両者を作成する。回収タンクに回収される第２ＳＰＭには、レジストが含まれている可能性がある。したがって、回収タンクに回収される第２ＳＰＭの清浄度は、レジストにより低下している可能性がある。よって、第１ＳＰＭ及び第２ＳＰＭの両者の清浄度が低下する可能性がある。その結果、処理後の基板のパーティクル数が増加して、処理後の基板の清浄度が低下する可能性がある。そのため、特許文献１の基板処理装置では、硫酸タンク内の薬液を硫酸の新液に交換する液交換処理の頻度を増加させる必要がある。 However, the substrate processing apparatus of Patent Document 1 uses the second SPM collected in the collection tank to create both the first SPM and the second SPM. The second SPM collected in the collection tank may contain resist. Therefore, the cleanliness of the second SPM collected in the collection tank may be reduced by the resist. Therefore, the cleanliness of both the first SPM and the second SPM may be reduced. As a result, the number of particles on the processed substrate may increase, and the cleanliness of the processed substrate may be reduced. Therefore, in the substrate processing apparatus of Patent Document 1, it is necessary to increase the frequency of the liquid exchange process in which the chemical liquid in the sulfuric acid tank is replaced with new sulfuric acid liquid.
　本発明は上記課題に鑑みてなされたものであり、その目的は、基板から排出された薬液を回収して再利用しても基板処理後の基板の清浄度が低下し難い基板処理装置を提供することにある。 The present invention was made in consideration of the above problems, and its purpose is to provide a substrate processing apparatus in which the cleanliness of the substrate after substrate processing is unlikely to decrease even if the chemical liquid discharged from the substrate is recovered and reused.
　本発明の一局面によれば、基板処理装置は、ノズルと、切替部と、制御部と、液受け部と、排液ラインと、回収ラインと、第１貯留部と、第２貯留部とを備える。前記ノズルは、基板に向けて第１薬液と第２薬液とを排他的に吐出して前記基板を処理する。前記切替部は、前記ノズルから吐出される薬液を前記第１薬液と前記第２薬液との間で切り替える。前記制御部は、前記切替部を制御する。前記液受け部は、第１液受け部と、第２液受け部とを含む。前記第１液受け部は、前記基板から排出される前記第１薬液を受け止める。前記第２液受け部は、前記基板から排出される前記第２薬液を受け止める。前記排液ラインには、前記第１液受け部から前記第１薬液が流入する。前記回収ラインには、前記第２液受け部から前記第２薬液が流入する。前記第１貯留部は、前記第１薬液に含まれる第３薬液を貯留する。前記第２貯留部は、前記第２薬液に含まれる第４薬液を貯留する。前記第１薬液と前記第２薬液とは同種の薬液である。前記回収ラインは、前記第２薬液を前記第１貯留部へ導く。 According to one aspect of the present invention, the substrate processing apparatus includes a nozzle, a switching unit, a control unit, a liquid receiving unit, a drain line, a recovery line, a first storage unit, and a second storage unit. The nozzle exclusively discharges a first chemical liquid and a second chemical liquid toward a substrate to process the substrate. The switching unit switches the chemical liquid discharged from the nozzle between the first chemical liquid and the second chemical liquid. The control unit controls the switching unit. The liquid receiving unit includes a first liquid receiving unit and a second liquid receiving unit. The first liquid receiving unit receives the first chemical liquid discharged from the substrate. The second liquid receiving unit receives the second chemical liquid discharged from the substrate. The first chemical liquid flows into the drain line from the first liquid receiving unit. The second chemical liquid flows into the recovery line from the second liquid receiving unit. The first storage unit stores a third chemical liquid contained in the first chemical liquid. The second storage section stores a fourth chemical liquid contained in the second chemical liquid. The first chemical liquid and the second chemical liquid are the same type of chemical liquid. The recovery line guides the second chemical liquid to the first storage section.
　ある実施形態において、上記基板処理装置は、第１循環部と、第２循環部と、薬液供給ラインとを更に備える。前記第１循環部は、前記第３薬液を前記第１貯留部を介して循環させる。前記第２循環部は、前記第４薬液を前記第２貯留部を介して循環させる。前記薬液供給ラインには、前記第１循環部を循環する前記第３薬液が流入する。前記薬液供給ラインには、前記第２循環部を循環する前記第４薬液が流入する。記切替部は、前記薬液供給ラインへの前記第３薬液の流入と前記流入の停止とを切り替える。 In one embodiment, the substrate processing apparatus further includes a first circulation unit, a second circulation unit, and a chemical liquid supply line. The first circulation unit circulates the third chemical liquid through the first storage unit. The second circulation unit circulates the fourth chemical liquid through the second storage unit. The third chemical liquid circulating through the first circulation unit flows into the chemical liquid supply line. The fourth chemical liquid circulating through the second circulation unit flows into the chemical liquid supply line. The switching unit switches between allowing the third chemical liquid to flow into the chemical liquid supply line and stopping the flow.
　ある実施形態において、前記第１薬液による基板処理は、前記基板から除去対象物を除去する処理であり、前記第２薬液による基板処理は、前記基板から前記除去対象物の残渣物を除去する処理である。 In one embodiment, the substrate treatment with the first chemical liquid is a process for removing a target object from the substrate, and the substrate treatment with the second chemical liquid is a process for removing a residue of the target object from the substrate.
　ある実施形態において、前記第１薬液及び前記第２薬液は、硫酸と過酸化水素水との混合液である。 In one embodiment, the first chemical liquid and the second chemical liquid are a mixture of sulfuric acid and hydrogen peroxide.
　ある実施形態において、前記第４薬液は、前記硫酸の新液である。 In one embodiment, the fourth chemical solution is a fresh solution of the sulfuric acid.
　ある実施形態において、前記第１貯留部は、初期状態において前記硫酸を貯留し、前記回収ラインにより前記第２薬液が回収されることで、前記硫酸と前記過酸化水素水との混合液を貯留する。 In one embodiment, the first storage section stores the sulfuric acid in an initial state, and stores a mixture of the sulfuric acid and the hydrogen peroxide solution as the second chemical solution is collected by the collection line.
　本発明に係る基板処理装置によれば、基板から排出された薬液を回収して再利用しても基板処理後の基板の清浄度が低下し難くなる。 The substrate processing apparatus according to the present invention makes it difficult for the cleanliness of the substrate to decrease after substrate processing, even if the chemicals discharged from the substrate are recovered and reused.
本発明の実施形態に係る基板処理装置の模式図である。1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; 本発明の実施形態に係る基板処理装置の構成の一部を示す図である。1 is a diagram showing a part of a configuration of a substrate processing apparatus according to an embodiment of the present invention; 本発明の実施形態に係る基板処理装置に含まれる第１供給部及び第２供給部の構成を示す図である。2 is a diagram showing configurations of a first supply unit and a second supply unit included in the substrate processing apparatus according to the embodiment of the present invention; FIG. 第１ＳＰＭによる基板処理が行われている際の第１供給部と第２供給部とを示す図である。13 is a diagram showing a first supply unit and a second supply unit when a substrate is being processed by a first SPM; FIG. 第２ＳＰＭによる基板処理が行われている際の第１供給部と第２供給部とを示す図である。13 is a diagram showing the first supply unit and the second supply unit when a substrate is being processed by a second SPM; FIG. 本発明の実施形態に係る基板処理装置に含まれる基板処理部の構成を模式的に示す断面図である。1 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to an embodiment of the present invention. 第２ＳＰＭによる基板処理を行う際の基板処理部を示す図である。FIG. 2 is a diagram showing a substrate processing section when performing substrate processing by a second SPM. リンス液を基板に供給する際の基板処理部を示す図である。FIG. 2 is a diagram showing the substrate processing section when a rinsing liquid is supplied to the substrate.
　以下、図面（図１～図８）を参照して本発明の基板処理装置に係る実施形態を説明する。但し、本発明は以下の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能である。なお、説明が重複する箇所については、適宜説明を省略する場合がある。また、図中、同一又は相当部分については同一の参照符号を付して説明を繰り返さない。 Below, an embodiment of the substrate processing apparatus of the present invention will be described with reference to the drawings (Figs. 1 to 8). However, the present invention is not limited to the following embodiment, and can be implemented in various forms without departing from the gist of the invention. Note that where explanations overlap, they may be omitted as appropriate. Also, in the drawings, the same or equivalent parts will be given the same reference symbols, and explanations will not be repeated.
　本発明に係る基板処理装置において基板処理の対象となる「基板」には、半導体ウェハ、フォトマスク用ガラス基板、液晶表示用ガラス基板、プラズマ表示用ガラス基板、ＦＥＤ（Ｆｉｅｌｄ　Ｅｍｉｓｓｉｏｎ　Ｄｉｓｐｌａｙ）用基板、光ディスク用基板、磁気ディスク用基板、及び光磁気ディスク用基板などの各種の基板を適用可能である。以下では主として、円盤状の半導体ウェハを基板処理の対象とする場合を例に本発明の実施形態を説明するが、本発明に係る基板処理装置は、上記した半導体ウェハ以外の各種の基板に対しても同様に適用可能である。また、基板の形状についても、円盤状に限定されず、本発明に係る基板処理装置は、各種の形状の基板に対して適用可能である。 The "substrate" that is the subject of substrate processing in the substrate processing apparatus according to the present invention can be a variety of substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Below, an embodiment of the present invention will be described mainly using as an example a case in which a disk-shaped semiconductor wafer is the subject of substrate processing, but the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the semiconductor wafers mentioned above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.
　まず、図１を参照して、本実施形態の基板処理装置１００を説明する。図１は、本実施形態の基板処理装置１００の模式図である。詳しくは、図１は、基板処理装置１００の模式的な平面図である。基板処理装置１００は、処理液を用いて基板Ｗを処理する。より具体的には、基板処理装置１００は、枚葉式の装置であり、１枚ずつ基板Ｗを処理する。 First, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W using a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes substrates W one by one.
　図１に示すように、基板処理装置１００は、複数の基板処理部１と、第１薬液キャビネット１０１と、第２薬液キャビネット１０３と、複数の流体ボックス１０５と、複数のロードポートＬＰと、インデクサーロボットＩＲと、センターロボットＣＲと、制御装置２００とを備える。 As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 1, a first chemical liquid cabinet 101, a second chemical liquid cabinet 103, a plurality of fluid boxes 105, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 200.
　ロードポートＬＰの各々は、複数枚の基板Ｗを積層して収容する。本実施形態では、未処理の基板Ｗ（処理前の基板Ｗ）の各々に、不要になったレジストのマスク（レジスト膜）が付着している。 Each load port LP accommodates a stack of multiple substrates W. In this embodiment, each unprocessed substrate W (substrate W before processing) has an unwanted resist mask (resist film) attached to it.
　インデクサーロボットＩＲは、ロードポートＬＰとセンターロボットＣＲとの間で基板Ｗを搬送する。センターロボットＣＲは、インデクサーロボットＩＲと基板処理部１との間で基板Ｗを搬送する。なお、インデクサーロボットＩＲとセンターロボットＣＲとの間に、基板Ｗを一時的に載置する載置台（パス）を設けて、インデクサーロボットＩＲとセンターロボットＣＲとの間で載置台を介して間接的に基板Ｗを受け渡しする装置構成としてもよい。 The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 1. Note that a placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to indirectly transfer substrates W between the indexer robot IR and the center robot CR via the placement stage.
　複数の基板処理部１は、複数のタワーＴＷ（図１では４つのタワーＴＷ）を形成している。複数のタワーＴＷは、平面視においてセンターロボットＣＲを取り囲むように配置される。各タワーＴＷは、上下に積層された複数の基板処理部１（図１では３つの基板処理部１）を含む。 The multiple substrate processing units 1 form multiple towers TW (four towers TW in FIG. 1). The multiple towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes multiple substrate processing units 1 (three substrate processing units 1 in FIG. 1) stacked one above the other.
　本実施形態において、第１薬液キャビネット１０１は、硫酸（Ｈ2ＳＯ4）、又は、硫酸と過酸化水素水（Ｈ2Ｏ2）との混合液を収容する。具体的には、第１薬液キャビネット１０１は、初期状態において硫酸の新液を収容する。基板処理部１は、硫酸過酸化水素水溶液（ＳＰＭ：Ｓｕｌｆｕｒｉｃ　Ａｃｉｄ　Ｈｙｄｒｏｇｅｎ　Ｐｅｒｏｘｉｄｅ　Ｍｉｘｔｕｒｅ）を用いて基板Ｗを処理する。硫酸過酸化水素水溶液（ＳＰＭ）は、硫酸と過酸化水素水との混合液である。基板処理部１が基板処理を行うと、ＳＰＭが基板処理部１から回収されて、第１薬液キャビネット１０１に収容される。この結果、第１薬液キャビネット１０１内で、硫酸と、基板処理部１から回収されたＳＰＭとが混合されて、硫酸と過酸化水素水との混合液が第１薬液キャビネット１０１に収容される。 In this embodiment, the first chemical liquid cabinet 101 contains sulfuric acid (H 2 SO 4 ) or a mixture of sulfuric acid and hydrogen peroxide (H 2 O 2 ). Specifically, the first chemical liquid cabinet 101 contains new sulfuric acid in an initial state. The substrate processing unit 1 processes the substrate W using a sulfuric acid-hydrogen peroxide solution (SPM: Sulfuric Acid Hydrogen Peroxide Mixture). The sulfuric acid-hydrogen peroxide solution (SPM) is a mixture of sulfuric acid and hydrogen peroxide. When the substrate processing unit 1 performs substrate processing, the SPM is collected from the substrate processing unit 1 and stored in the first chemical liquid cabinet 101. As a result, the sulfuric acid and the SPM collected from the substrate processing unit 1 are mixed in the first chemical liquid cabinet 101, and a mixture of sulfuric acid and hydrogen peroxide is stored in the first chemical liquid cabinet 101.
　本実施形態において、第２薬液キャビネット１０３は、硫酸の新液を収容する。基板処理部１から回収されたＳＰＭは、第２薬液キャビネット１０３に収容されない。したがって、第２薬液キャビネット１０３は、硫酸の新液を常に収容する。 In this embodiment, the second chemical liquid cabinet 103 contains new sulfuric acid. SPM recovered from the substrate processing unit 1 is not contained in the second chemical liquid cabinet 103. Therefore, the second chemical liquid cabinet 103 always contains new sulfuric acid.
　流体ボックス１０５はそれぞれ、複数のタワーＴＷのうちの１つに対応している。第１薬液キャビネット１０１内の薬液（硫酸、又は、硫酸と過酸化水素水との混合液）は、いずれかの流体ボックス１０５を介して、流体ボックス１０５に対応するタワーＴＷに含まれる全ての基板処理部１に供給される。同様に、第２薬液キャビネット１０３内の薬液（硫酸）は、いずれかの流体ボックス１０５を介して、流体ボックス１０５に対応するタワーＴＷに含まれる全ての基板処理部１に供給される。 Each of the fluid boxes 105 corresponds to one of the multiple towers TW. The chemical liquid (sulfuric acid, or a mixture of sulfuric acid and hydrogen peroxide) in the first chemical liquid cabinet 101 is supplied to all substrate processing units 1 included in the tower TW corresponding to the fluid box 105 via one of the fluid boxes 105. Similarly, the chemical liquid (sulfuric acid) in the second chemical liquid cabinet 103 is supplied to all substrate processing units 1 included in the tower TW corresponding to the fluid box 105 via one of the fluid boxes 105.
　基板処理部１の各々は、ＳＰＭを用いて基板Ｗを処理する。より具体的には、基板処理部１の各々は、第１ＳＰＭと、第２ＳＰＭと、リンス液とをこの順に基板Ｗに供給して、基板Ｗからレジスト膜を除去する。第１ＳＰＭと、第２ＳＰＭとでは、硫酸と過酸化水素水との混合比が異なる。詳しくは、第２ＳＰＭは、第１ＳＰＭと比べて、硫酸の割合が大きい。つまり、第２ＳＰＭは、第１ＳＰＭと比べて、硫酸の濃度が高い。第１ＳＰＭを基板Ｗに供給することにより、レジスト膜の硬化層の一部が基板Ｗから除去される。第２ＳＰＭを基板Ｗに供給することにより、レジスト膜の残渣物が基板Ｗから除去される。 Each of the substrate processing units 1 processes the substrate W using SPM. More specifically, each of the substrate processing units 1 supplies the substrate W with a first SPM, a second SPM, and a rinse liquid in that order to remove the resist film from the substrate W. The first SPM and the second SPM have different mixture ratios of sulfuric acid and hydrogen peroxide. More specifically, the second SPM has a higher proportion of sulfuric acid than the first SPM. In other words, the second SPM has a higher concentration of sulfuric acid than the first SPM. By supplying the first SPM to the substrate W, a portion of the hardened layer of the resist film is removed from the substrate W. By supplying the second SPM to the substrate W, residual resist film is removed from the substrate W.
　リンス液は、脱イオン水（Ｄｅｉｏｎｉｚｅｄ　ｗａｔｅｒ；ＤＩＷ）である。脱イオン水は、所謂「超純水」である。但し、リンス液は、脱イオン水に限定されない。例えば、リンス液は、炭酸水、電解イオン水、水素水、オゾン水、アンモニア水、又は希釈された塩酸水（例えば、濃度が１０ｐｐｍ～１００ｐｐｍ程度の塩酸水）であり得る。 The rinse liquid is deionized water (DIW). Deionized water is what is known as "ultrapure water." However, the rinse liquid is not limited to deionized water. For example, the rinse liquid can be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).
　続いて、制御装置２００を説明する。制御装置２００は、基板処理装置１００の各部の動作を制御する。例えば、制御装置２００は、基板処理部１、ロードポートＬＰ、インデクサーロボットＩＲ、センターロボットＣＲ、第１薬液キャビネット１０１、第２薬液キャビネット１０３、及び流体ボックス１０５を制御する。制御装置２００は、制御部２０１と、記憶部２０２とを含む。 Next, the control device 200 will be described. The control device 200 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 200 controls the substrate processing unit 1, the load port LP, the indexer robot IR, the center robot CR, the first chemical liquid cabinet 101, the second chemical liquid cabinet 103, and the fluid box 105. The control device 200 includes a control unit 201 and a memory unit 202.
　制御部２０１は、記憶部２０２に記憶されている各種情報に基づいて基板処理装置１００の各部の動作を制御する。制御部２０１は、例えば、プロセッサを有する。制御部２０１は、プロセッサとして、ＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）、又はＭＰＵ（Ｍｉｃｒｏ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）を有してもよい。あるいは、制御部２０１は、汎用演算機又は専用演算器を有してもよい。 The control unit 201 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 202. The control unit 201 has, for example, a processor. The control unit 201 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 201 may have a general-purpose computing device or a dedicated computing device.
　記憶部２０２は、基板処理装置１００の動作を制御するための各種情報を記憶する。例えば、記憶部２０２は、データ及びコンピュータプログラムを記憶する。データには、例えば、第１薬液キャビネット１０１に収容されている薬液に含まれる硫酸の濃度の閾値が含まれる。また、データには、第１薬液キャビネット１０１に収容されている薬液の温度の設定値と、第２薬液キャビネット１０３に収容されている薬液の温度の設定値と、流体ボックス１０５から基板処理部１に供給される薬液の温度の設定値とが含まれる。更に、データは、レシピデータを含む。レシピデータは、基板Ｗの処理内容、処理条件、及び処理手順を規定するレシピを示す。 The memory unit 202 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the memory unit 202 stores data and computer programs. The data includes, for example, a threshold value for the concentration of sulfuric acid contained in the chemical liquid contained in the first chemical liquid cabinet 101. The data also includes a set value for the temperature of the chemical liquid contained in the first chemical liquid cabinet 101, a set value for the temperature of the chemical liquid contained in the second chemical liquid cabinet 103, and a set value for the temperature of the chemical liquid supplied from the fluid box 105 to the substrate processing unit 1. Furthermore, the data includes recipe data. The recipe data indicates a recipe that specifies the processing content, processing conditions, and processing procedure for the substrate W.
　記憶部２０２は、主記憶装置を有する。主記憶装置は、例えば、半導体メモリである。記憶部２０２は、補助記憶装置を更に有してもよい。補助記憶装置は、例えば、半導体メモリ及びハードディスクドライブの少なくも一方を含む。記憶部２０２はリムーバブルメディアを含んでいてもよい。 The storage unit 202 has a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 202 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 202 may include removable media.
　続いて、図１及び図２を参照して、本実施形態の基板処理装置１００を説明する。図２は、本実施形態の基板処理装置１００の構成の一部を示す図である。詳しくは、図２は、第１薬液キャビネット１０１の構成と、第２薬液キャビネット１０３の構成と、基板処理部１の構成とを示す。また、図２は、第１薬液キャビネット１０１と、第２薬液キャビネット１０３と、基板処理部１との間で薬液を流通させる各種配管を示す。 Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 2 is a diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. In detail, Figure 2 shows the configuration of the first chemical liquid cabinet 101, the configuration of the second chemical liquid cabinet 103, and the configuration of the substrate processing section 1. Figure 2 also shows various pipes that circulate chemical liquids between the first chemical liquid cabinet 101, the second chemical liquid cabinet 103, and the substrate processing section 1.
　図２に示すように、基板処理装置１００は、第１循環部１１０と、第１供給部１２０と、濃度測定部１３０と、第１補充部１４０と、第２循環部１５０と、第２供給部１６０と、第２補充部１７０と、回収部３０と、第１供給ラインＬ１と、排液ラインＬ２とを更に備える。第１供給ラインＬ１は、「薬液供給ライン」の一例である。 As shown in FIG. 2, the substrate processing apparatus 100 further includes a first circulation unit 110, a first supply unit 120, a concentration measurement unit 130, a first replenishment unit 140, a second circulation unit 150, a second supply unit 160, a second replenishment unit 170, a recovery unit 30, a first supply line L1, and a drainage line L2. The first supply line L1 is an example of a "chemical liquid supply line."
　まず、基板処理部１を説明する。図２に示すように、基板処理部１は、チャンバ１ａと、ノズル２と、対向部材３と、液受け部４とを有する。 First, the substrate processing section 1 will be described. As shown in FIG. 2, the substrate processing section 1 has a chamber 1a, a nozzle 2, an opposing member 3, and a liquid receiving section 4.
　チャンバ１ａは、略箱形状を有する。チャンバ１ａは、ノズル２と、対向部材３と、液受け部４と、基板Ｗとを収容する。 Chamber 1a has a roughly box-like shape. Chamber 1a houses a nozzle 2, an opposing member 3, a liquid receiving portion 4, and a substrate W.
　ノズル２は、基板Ｗに向けて第１ＳＰＭと第２ＳＰＭとを排他的に吐出して基板Ｗを処理する。第１ＳＰＭは「第１薬液」の一例であり、第２ＳＰＭは「第２薬液」の一例である。第２ＳＰＭは第１ＳＰＭと同種の薬液であり、既に説明したように、第１ＳＰＭと、第２ＳＰＭとでは、硫酸と過酸化水素水との混合比が異なる。第１ＳＰＭによる基板処理は、基板Ｗからレジスト膜の一部を除去する処理であり、第２ＳＰＭによる基板処理は、基板Ｗからレジスト膜の残渣物を除去する処理である。レジスト膜は、「除去対象物」の一例である。 The nozzle 2 exclusively discharges the first SPM and the second SPM toward the substrate W to process the substrate W. The first SPM is an example of a "first chemical liquid", and the second SPM is an example of a "second chemical liquid". The second SPM is the same type of chemical liquid as the first SPM, and as already explained, the first SPM and the second SPM have different mixture ratios of sulfuric acid and hydrogen peroxide solution. The substrate processing with the first SPM is a process of removing a portion of the resist film from the substrate W, and the substrate processing with the second SPM is a process of removing residual resist film from the substrate W. The resist film is an example of an "object to be removed".
　より具体的には、ノズル２は、第１ＳＰＭを基板Ｗに供給して、基板Ｗの上面に第１ＳＰＭの液膜を形成する。この結果、第１ＳＰＭにより、基板Ｗに含まれるレジスト膜の硬化層の一部が基板本体から剥離される。あるいは、レジスト膜の硬化層の一部が破壊される。 More specifically, the nozzle 2 supplies the first SPM to the substrate W to form a liquid film of the first SPM on the upper surface of the substrate W. As a result, the first SPM causes a portion of the hardened layer of the resist film contained in the substrate W to be peeled off from the substrate body. Alternatively, a portion of the hardened layer of the resist film is destroyed.
　ノズル２は、第１ＳＰＭの液膜の形成後に、第２ＳＰＭを基板Ｗに供給する。この結果、第１ＳＰＭが第２ＳＰＭにより基板Ｗから押し流されて基板Ｗから排出され、基板Ｗの上面に第２ＳＰＭの液膜が形成される。このとき、第１ＳＰＭによって剥離又は破壊された硬化層が第１ＳＰＭと共に基板Ｗから排出される。第２ＳＰＭを基板Ｗに供給することにより、基板Ｗに含まれるレジスト膜の残渣物が基板本体から剥離される。あるいは、残渣物が破壊される。 After the formation of a liquid film of the first SPM, the nozzle 2 supplies the second SPM to the substrate W. As a result, the first SPM is swept away from the substrate W by the second SPM and discharged from the substrate W, and a liquid film of the second SPM is formed on the upper surface of the substrate W. At this time, the hardened layer peeled off or destroyed by the first SPM is discharged from the substrate W together with the first SPM. By supplying the second SPM to the substrate W, the residue of the resist film contained in the substrate W is peeled off from the substrate body. Alternatively, the residue is destroyed.
　対向部材３は、基板Ｗに対向する。詳しくは、対向部材３は、基板Ｗの上方に配置される。対向部材３は、第２ＳＰＭの液膜の形成後に、リンス液を基板Ｗに供給する。この結果、第２ＳＰＭがリンス液により基板Ｗから押し流されて基板Ｗから排出される。また、このとき、第２ＳＰＭによって剥離又は破壊されたレジスト膜の残渣物が第２ＳＰＭと共に基板Ｗから排出される。 The opposing member 3 faces the substrate W. More specifically, the opposing member 3 is disposed above the substrate W. After the liquid film of the second SPM is formed, the opposing member 3 supplies a rinse liquid to the substrate W. As a result, the second SPM is swept away from the substrate W by the rinse liquid and discharged from the substrate W. At this time, the residue of the resist film that has been peeled off or destroyed by the second SPM is discharged from the substrate W together with the second SPM.
　液受け部４は、基板Ｗから排出される薬液を受け止める。液受け部４は更に、基板Ｗから排出されるリンス液を受け止める。詳しくは、液受け部４は、第１液受け部４１と、第２液受け部４２とを含む。第１液受け部４１は、基板Ｗから排出される第１ＳＰＭを受け止める。第１液受け部４１は更に、基板Ｗから排出されるリンス液を受け止める。第２液受け部４２は、基板Ｗから排出される第２ＳＰＭを受け止める。 The liquid receiving portion 4 receives the chemical liquid discharged from the substrate W. The liquid receiving portion 4 also receives the rinsing liquid discharged from the substrate W. In detail, the liquid receiving portion 4 includes a first liquid receiving portion 41 and a second liquid receiving portion 42. The first liquid receiving portion 41 receives the first SPM discharged from the substrate W. The first liquid receiving portion 41 also receives the rinsing liquid discharged from the substrate W. The second liquid receiving portion 42 receives the second SPM discharged from the substrate W.
　続いて、第１循環部１１０を説明する。図２に示すように、第１循環部１１０は、第１貯留部１１１と、第１循環配管１１２と、第１加熱部材１１３と、第１循環ポンプ１１４とを有する。 Next, the first circulation section 110 will be described. As shown in FIG. 2, the first circulation section 110 has a first storage section 111, a first circulation pipe 112, a first heating member 113, and a first circulation pump 114.
　第１貯留部１１１は、第１薬液キャビネット１０１内に収容される。第１貯留部１１１は、硫酸、又は、硫酸と過酸化水素水との混合液を貯留する。第１貯留部１１１に貯留される薬液（硫酸、又は、硫酸と過酸化水素水との混合液）は、「第３薬液」の一例である。ノズル２から吐出される第１ＳＰＭには、第１貯留部１１１から供給される薬液（硫酸、又は、硫酸と過酸化水素水との混合液）が含まれる。以下、第１貯留部１１１に貯留される薬液（硫酸、又は、硫酸と過酸化水素水との混合液）を、「第１貯留薬液」と記載する場合がある。第１循環部１１０は、第１貯留薬液を第１貯留部１１１を介して循環させる。 The first storage unit 111 is housed in the first chemical liquid cabinet 101. The first storage unit 111 stores sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide. The chemical liquid stored in the first storage unit 111 (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) is an example of a "third chemical liquid". The first SPM discharged from the nozzle 2 contains the chemical liquid (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) supplied from the first storage unit 111. Hereinafter, the chemical liquid stored in the first storage unit 111 (sulfuric acid or a mixture of sulfuric acid and hydrogen peroxide) may be referred to as the "first stored chemical liquid". The first circulation unit 110 circulates the first stored chemical liquid through the first storage unit 111.
　具体的には、第１循環配管１１２の一端が第１貯留部１１１に接続される。第１循環配管１１２には、第１貯留部１１１から第１貯留薬液が流入する。第１循環配管１１２は、第１貯留薬液が流通する管状の部材である。第１循環配管１１２の他端は、第１貯留部１１１に接続される。第１循環配管１１２の一端から他端まで流通した第１貯留薬液は、第１貯留部１１１に戻り、第１貯留部１１１に貯留される。第１循環配管１１２の一部は、第１薬液キャビネット１０１内に収容される。第１循環配管１１２の他の一部は、図１を参照して説明した流体ボックス１０５内に収容される。 Specifically, one end of the first circulation pipe 112 is connected to the first storage section 111. The first stored chemical liquid flows into the first circulation pipe 112 from the first storage section 111. The first circulation pipe 112 is a tubular member through which the first stored chemical liquid flows. The other end of the first circulation pipe 112 is connected to the first storage section 111. The first stored chemical liquid that flows from one end of the first circulation pipe 112 to the other end returns to the first storage section 111 and is stored in the first storage section 111. A part of the first circulation pipe 112 is housed in the first chemical liquid cabinet 101. The other part of the first circulation pipe 112 is housed in the fluid box 105 described with reference to FIG. 1.
　第１加熱部材１１３は第１薬液キャビネット１０１内に収容される。第１加熱部材１１３は第１循環配管１１２に配置されて、第１貯留薬液を加熱する。例えば、第１加熱部材１１３は、第１貯留薬液を１６５℃で加熱する。第１循環ポンプ１１４は第１薬液キャビネット１０１内に収容される。第１循環ポンプ１１４は、第１循環配管１１２の一端から他端に向かって第１循環配管１１２内を第１貯留薬液が流れるように第１貯留薬液を送液する。第１加熱部材１１３及び第１循環ポンプ１１４は、制御装置２００（制御部２０１）によって制御される。 The first heating member 113 is housed in the first chemical liquid cabinet 101. The first heating member 113 is disposed in the first circulation pipe 112 and heats the first stored chemical liquid. For example, the first heating member 113 heats the first stored chemical liquid to 165°C. The first circulation pump 114 is housed in the first chemical liquid cabinet 101. The first circulation pump 114 pumps the first stored chemical liquid so that the first stored chemical liquid flows through the first circulation pipe 112 from one end to the other end of the first circulation pipe 112. The first heating member 113 and the first circulation pump 114 are controlled by the control device 200 (control unit 201).
　続いて、第２循環部１５０を説明する。図２に示すように、第２循環部１５０は、第２貯留部１５１と、第２循環配管１５２と、第２加熱部材１５３と、第２循環ポンプ１５４とを有する。 Next, the second circulation section 150 will be described. As shown in FIG. 2, the second circulation section 150 has a second storage section 151, a second circulation pipe 152, a second heating member 153, and a second circulation pump 154.
　第２貯留部１５１は、第２薬液キャビネット１０３内に収容される。第２貯留部１５１は、硫酸の新液を貯留する。第２貯留部１５１に貯留される薬液（硫酸の新液）は、「第４薬液」の一例である。ノズル２から吐出される第２ＳＰＭには、第２貯留部１５１から供給される薬液（硫酸の新液）が含まれる。以下、第２貯留部１５１に貯留される薬液（硫酸の新液）を、「第２貯留薬液」と記載する場合がある。第２循環部１５０は、第２貯留薬液を第２貯留部１５１を介して循環させる。 The second storage section 151 is housed within the second chemical liquid cabinet 103. The second storage section 151 stores new sulfuric acid. The chemical liquid (new sulfuric acid) stored in the second storage section 151 is an example of a "fourth chemical liquid". The second SPM ejected from the nozzle 2 contains the chemical liquid (new sulfuric acid) supplied from the second storage section 151. Hereinafter, the chemical liquid (new sulfuric acid) stored in the second storage section 151 may be referred to as the "second stored chemical liquid". The second circulation section 150 circulates the second stored chemical liquid via the second storage section 151.
　具体的には、第２循環配管１５２の一端が第２貯留部１５１に接続される。第２循環配管１５２には、第２貯留部１５１から第２貯留薬液が流入する。第２循環配管１５２は、第２貯留薬液が流通する管状の部材である。第２循環配管１５２の他端は、第２貯留部１５１に接続される。第２循環配管１５２の一端から他端まで流通した第２貯留薬液は、第２貯留部１５１に戻り、第２貯留部１５１に貯留される。第２循環配管１５２の一部は、第２薬液キャビネット１０３内に収容される。第２循環配管１５２の他の一部は、図１を参照して説明した流体ボックス１０５内に収容される。 Specifically, one end of the second circulation pipe 152 is connected to the second storage section 151. The second stored chemical liquid flows into the second circulation pipe 152 from the second storage section 151. The second circulation pipe 152 is a tubular member through which the second stored chemical liquid flows. The other end of the second circulation pipe 152 is connected to the second storage section 151. The second stored chemical liquid that flows from one end of the second circulation pipe 152 to the other end returns to the second storage section 151 and is stored in the second storage section 151. A part of the second circulation pipe 152 is housed in the second chemical liquid cabinet 103. The other part of the second circulation pipe 152 is housed in the fluid box 105 described with reference to FIG. 1.
　第２加熱部材１５３は第２薬液キャビネット１０３内に収容される。第２加熱部材１５３は第２循環配管１５２に配置されて、第２貯留薬液を加熱する。例えば、第２加熱部材１５３は、第２貯留薬液を１６５℃で加熱する。第２循環ポンプ１５４は第２薬液キャビネット１０３内に収容される。第２循環ポンプ１５４は、第２循環配管１５２の一端から他端に向かって第２循環配管１５２内を第２貯留薬液が流れるように第２貯留薬液を送液する。第２加熱部材１５３及び第２循環ポンプ１５４は、制御装置２００（制御部２０１）によって制御される。 The second heating member 153 is housed in the second chemical liquid cabinet 103. The second heating member 153 is disposed in the second circulation pipe 152 and heats the second stored chemical liquid. For example, the second heating member 153 heats the second stored chemical liquid to 165°C. The second circulation pump 154 is housed in the second chemical liquid cabinet 103. The second circulation pump 154 pumps the second stored chemical liquid so that the second stored chemical liquid flows through the second circulation pipe 152 from one end to the other end of the second circulation pipe 152. The second heating member 153 and the second circulation pump 154 are controlled by the control device 200 (control unit 201).
　続いて、第１供給ラインＬ１と、第１供給部１２０と、第２供給部１６０とを説明する。図２に示すように、第１供給部１２０は、第１供給配管１２１と、第１戻り配管１２２とを有する。第２供給部１６０は、第２供給配管１６１と、第２戻り配管１６２とを有する。第１供給配管１２１及び第１戻り配管１２２は、図１を参照して説明した流体ボックス１０５に収容される。第２供給配管１６１の一部は、流体ボックス１０５内に収容される。第２供給配管１６１の他部はチャンバ１ａ内に収容される。第２戻り配管１６２は、流体ボックス１０５内に収容される。本実施形態において、第１供給ラインＬ１は、第２供給配管１６１を含む。 Next, the first supply line L1, the first supply unit 120, and the second supply unit 160 will be described. As shown in FIG. 2, the first supply unit 120 has a first supply pipe 121 and a first return pipe 122. The second supply unit 160 has a second supply pipe 161 and a second return pipe 162. The first supply pipe 121 and the first return pipe 122 are housed in the fluid box 105 described with reference to FIG. 1. A portion of the second supply pipe 161 is housed in the fluid box 105. The other portion of the second supply pipe 161 is housed in the chamber 1a. The second return pipe 162 is housed in the fluid box 105. In this embodiment, the first supply line L1 includes the second supply pipe 161.
　第１供給配管１２１は、第１貯留薬液が流通する管状の部材である。具体的には、第１供給配管１２１の一端が第１循環配管１１２に接続する。第１供給配管１２１には、第１循環部１１０を循環する第１貯留薬液が流入する。詳しくは、第１循環配管１１２から第１供給配管１２１に第１貯留薬液が流入する。第１供給配管１２１の他端は、第２供給配管１６１（第１供給ラインＬ１）に接続する。第１ＳＰＭにより基板Ｗを処理する際に、第１循環部１１０を循環する第１貯留薬液が第１供給配管１２１を介して第２供給配管１６１（第１供給ラインＬ１）に流入する。 The first supply pipe 121 is a tubular member through which the first stored chemical liquid flows. Specifically, one end of the first supply pipe 121 is connected to the first circulation pipe 112. The first stored chemical liquid circulating through the first circulation unit 110 flows into the first supply pipe 121. More specifically, the first stored chemical liquid flows from the first circulation pipe 112 into the first supply pipe 121. The other end of the first supply pipe 121 is connected to the second supply pipe 161 (first supply line L1). When processing the substrate W by the first SPM, the first stored chemical liquid circulating through the first circulation unit 110 flows into the second supply pipe 161 (first supply line L1) via the first supply pipe 121.
　第１戻り配管１２２は、第１貯留薬液が流通する管状の部材である。具体的には、第１戻り配管１２２は、第１供給配管１２１から分岐して、第１循環配管１１２まで延びる。つまり、第１戻り配管１２２の一端は第１供給配管１２１に接続し、第１戻り配管１２２の他端は第１循環配管１１２に接続する。第１ＳＰＭによる基板処理が行われていないとき、第１供給配管１２１から第１戻り配管１２２に第１貯留薬液が流入する。第１戻り配管１２２は、第１貯留薬液を第１循環配管１１２まで流通させて、第１循環配管１１２に戻す。 The first return pipe 122 is a tubular member through which the first stored chemical liquid flows. Specifically, the first return pipe 122 branches off from the first supply pipe 121 and extends to the first circulation pipe 112. That is, one end of the first return pipe 122 is connected to the first supply pipe 121, and the other end of the first return pipe 122 is connected to the first circulation pipe 112. When substrate processing is not being performed by the first SPM, the first stored chemical liquid flows from the first supply pipe 121 into the first return pipe 122. The first return pipe 122 flows the first stored chemical liquid to the first circulation pipe 112 and returns it to the first circulation pipe 112.
　第２供給配管１６１（第１供給ラインＬ１）には更に、第２循環部１５０を循環する第２貯留薬液が流入する。具体的には、第２供給配管１６１の一端が第２循環配管１５２に接続している。第２供給配管１６１の他端はノズル２に接続している。第２供給配管１６１の一端と他端との間に第１供給配管１２１が接続している。 The second stored chemical liquid circulating through the second circulation section 150 also flows into the second supply pipe 161 (first supply line L1). Specifically, one end of the second supply pipe 161 is connected to the second circulation pipe 152. The other end of the second supply pipe 161 is connected to the nozzle 2. The first supply pipe 121 is connected between one end and the other end of the second supply pipe 161.
　第２供給配管１６１は、管状の部材であり、第２ＳＰＭによる基板処理が行われるとき、第２循環配管１５２から第２供給配管１６１に流入する第２貯留薬液をノズル２まで流通させる。したがって、第２ＳＰＭによる基板処理が行われるとき、第１供給ラインＬ１は、第２貯留薬液をノズル２に供給する。 The second supply pipe 161 is a tubular member, and when substrate processing is performed by the second SPM, the second stored chemical liquid that flows from the second circulation pipe 152 into the second supply pipe 161 is circulated to the nozzle 2. Therefore, when substrate processing is performed by the second SPM, the first supply line L1 supplies the second stored chemical liquid to the nozzle 2.
　第１ＳＰＭによる基板処理が行われるとき、第１供給ラインＬ１は、第１貯留薬液をノズル２に供給する。詳しくは、第１ＳＰＭによる基板処理が行われるとき、第２供給配管１６１は、第２供給配管１６１と第２循環配管１５２との接続箇所から、第２供給配管１６１と第１供給配管１２１との接続箇所まで、第２循環配管１５２から第２供給配管１６１に流入する第２貯留薬液を流通させ、第２供給配管１６１と第１供給配管１２１との接続箇所からノズル２まで、第２貯留薬液と第１貯留薬液との混合液を流通させる。したがって、第１ＳＰＭによる基板処理が行われるとき、第１供給ラインＬ１は、第２貯留薬液と第１貯留薬液との混合液をノズル２に供給する。よって、ノズル２から吐出される第２ＳＰＭには、第２貯留薬液と第１貯留薬液との混合液が含まれる。 When the substrate is processed by the first SPM, the first supply line L1 supplies the first stored chemical liquid to the nozzle 2. In detail, when the substrate is processed by the first SPM, the second supply pipe 161 circulates the second stored chemical liquid flowing from the second circulation pipe 152 to the second supply pipe 161 from the connection point between the second supply pipe 161 and the second circulation pipe 152 to the connection point between the second supply pipe 161 and the first supply pipe 121, and circulates a mixture of the second stored chemical liquid and the first stored chemical liquid from the connection point between the second supply pipe 161 and the first supply pipe 121 to the nozzle 2. Therefore, when the substrate is processed by the first SPM, the first supply line L1 supplies the mixture of the second stored chemical liquid and the first stored chemical liquid to the nozzle 2. Therefore, the second SPM discharged from the nozzle 2 contains a mixture of the second stored chemical liquid and the first stored chemical liquid.
　第２戻り配管１６２は、第２貯留薬液が流通する管状の部材である。具体的には、第２戻り配管１６２は、第２供給配管１６１から分岐して、第２循環配管１５２まで延びる。つまり、第２戻り配管１６２の一端は第２供給配管１６１に接続し、第２戻り配管１６２の他端は第２循環配管１５２に接続する。第１ＳＰＭによる基板処理と第２ＳＰＭによる基板処理とが行われていないとき、第２供給配管１６１から第２戻り配管１６２に第２貯留薬液が流入する。第２戻り配管１６２は、第２貯留薬液を第２循環配管１５２まで流通させて、第２循環配管１５２に戻す。 The second return pipe 162 is a tubular member through which the second stored chemical liquid flows. Specifically, the second return pipe 162 branches off from the second supply pipe 161 and extends to the second circulation pipe 152. That is, one end of the second return pipe 162 is connected to the second supply pipe 161, and the other end of the second return pipe 162 is connected to the second circulation pipe 152. When substrate processing by the first SPM and substrate processing by the second SPM are not being performed, the second stored chemical liquid flows from the second supply pipe 161 to the second return pipe 162. The second return pipe 162 flows the second stored chemical liquid to the second circulation pipe 152 and returns it to the second circulation pipe 152.
　続いて、排液ラインＬ２を説明する。第１ＳＰＭによる基板処理が行われているとき、排液ラインＬ２には、第１液受け部４１から第１ＳＰＭが流入する。この結果、第１ＳＰＭは排液される。第１ＳＰＭには、第１貯留薬液に含まれる。また、リンス液による基板処理が行われているとき、排液ラインＬ２には、第１液受け部４１からリンス液が流入する。この結果、リンス液は排液される。 Next, the drain line L2 will be described. When substrate processing is being performed with the first SPM, the first SPM flows into the drain line L2 from the first liquid receiver 41. As a result, the first SPM is drained. The first SPM is contained in the first stored chemical liquid. Also, when substrate processing is being performed with a rinsing liquid, the rinsing liquid flows into the drain line L2 from the first liquid receiver 41. As a result, the rinsing liquid is drained.
　詳しくは、排液ラインＬ２は、排液配管２１を含む。排液配管２１は、第１ＳＰＭ及びリンス液が流通する管状の部材である。第１ＳＰＭによる基板処理が行われているとき、排液配管２１には第１ＳＰＭが流入する。また、リンス液による基板処理が行われているとき、排液配管２１にはリンス液が流入する。排液ラインＬ２（排液配管２１）は、基板処理装置１００が設置されている工場の廃液設備に接続する配管に第１ＳＰＭ及びリンス液を流入させる。なお、排液配管２１の一部は、図１を参照して説明した流体ボックス１０５内に収容される。 More specifically, the drain line L2 includes a drain pipe 21. The drain pipe 21 is a tubular member through which the first SPM and the rinse liquid flow. When substrate processing is being performed with the first SPM, the first SPM flows into the drain pipe 21. When substrate processing is being performed with the rinse liquid, the rinse liquid flows into the drain pipe 21. The drain line L2 (drain pipe 21) causes the first SPM and the rinse liquid to flow into a pipe connected to a waste liquid facility of the factory in which the substrate processing apparatus 100 is installed. A portion of the drain pipe 21 is housed in the fluid box 105 described with reference to FIG. 1.
　続いて、回収部３０を説明する。図２に示すように、回収部３０は、回収ラインＬ３を含む。回収ラインＬ３には、第２液受け部４２から第２ＳＰＭが流入する。回収ラインＬ３は、第２ＳＰＭを第１貯留部１１１へ導く。したがって、第１貯留部１１１は、初期状態において硫酸（新液）を貯留し、回収ラインＬ３により第２ＳＰＭが回収されることで、硫酸と過酸化水素水との混合液を貯留する。 Next, the recovery unit 30 will be described. As shown in FIG. 2, the recovery unit 30 includes a recovery line L3. The second SPM flows into the recovery line L3 from the second liquid receiving unit 42. The recovery line L3 guides the second SPM to the first storage unit 111. Therefore, the first storage unit 111 stores sulfuric acid (new liquid) in the initial state, and stores a mixture of sulfuric acid and hydrogen peroxide as the second SPM is recovered by the recovery line L3.
　詳しくは、回収部３０は、第１回収配管３１と、回収タンク３２と、第２回収配管３３と、回収ポンプ３４とを有する。回収ラインＬ３には、第１回収配管３１と、第２回収配管３３と、回収ポンプ３４とが含まれる。第１回収配管３１の一部は、図１を参照して説明した流体ボックス１０５内に収容される。第１回収配管３１の他の一部は、第１薬液キャビネット１０１に収容される。回収タンク３２、第２回収配管３３、及び回収ポンプ３４は、第１薬液キャビネット１０１に収容される。 In detail, the recovery section 30 has a first recovery pipe 31, a recovery tank 32, a second recovery pipe 33, and a recovery pump 34. The recovery line L3 includes the first recovery pipe 31, the second recovery pipe 33, and the recovery pump 34. A portion of the first recovery pipe 31 is housed in the fluid box 105 described with reference to FIG. 1. Another portion of the first recovery pipe 31 is housed in the first chemical liquid cabinet 101. The recovery tank 32, the second recovery pipe 33, and the recovery pump 34 are housed in the first chemical liquid cabinet 101.
　第１回収配管３１は、第２ＳＰＭが流通する管状の部材である。第２ＳＰＭによる基板処理が行われているとき、第１回収配管３１に第２ＳＰＭが流入する。第１回収配管３１は、回収タンク３２まで第２ＳＰＭを流通させる。この結果、回収タンク３２に第２ＳＰＭが貯留される。 The first recovery pipe 31 is a tubular member through which the second SPM flows. When substrate processing is being performed with the second SPM, the second SPM flows into the first recovery pipe 31. The first recovery pipe 31 causes the second SPM to flow up to the recovery tank 32. As a result, the second SPM is stored in the recovery tank 32.
　第２回収配管３３の一端は回収タンク３２に接続し、第２回収配管３３の他端は、第１貯留部１１１に接続している。回収ポンプ３４は第２回収配管３３に配置されている。第２回収配管３３には、回収タンク３２から第２ＳＰＭが流入する。回収ポンプ３４は、第２回収配管３３の一端から他端に向かって第２回収配管３３内を第２ＳＰＭが流れるように第２ＳＰＭを送液する。回収ポンプ３４は、制御装置２００（制御部２０１）によって制御される。 One end of the second recovery pipe 33 is connected to the recovery tank 32, and the other end of the second recovery pipe 33 is connected to the first storage section 111. The recovery pump 34 is disposed in the second recovery pipe 33. The second SPM flows into the second recovery pipe 33 from the recovery tank 32. The recovery pump 34 pumps the second SPM so that the second SPM flows through the second recovery pipe 33 from one end to the other end of the second recovery pipe 33. The recovery pump 34 is controlled by the control device 200 (control section 201).
　続いて、濃度測定部１３０を説明する。濃度測定部１３０は、第１貯留薬液に含まれる硫酸の濃度を測定する。具体的には、図２に示すように、濃度測定部１３０は、分岐配管１３１と、濃度計１３２とを有する。分岐配管１３１、及び濃度計１３２は、第１薬液キャビネット１０１に収容される。 Next, the concentration measuring unit 130 will be described. The concentration measuring unit 130 measures the concentration of sulfuric acid contained in the first stored chemical liquid. Specifically, as shown in FIG. 2, the concentration measuring unit 130 has a branch pipe 131 and a concentration meter 132. The branch pipe 131 and the concentration meter 132 are housed in the first chemical liquid cabinet 101.
　分岐配管１３１は、第１循環配管１１２から分岐して、第１貯留部１１１まで延びる。したがって、第１循環配管１１２から分岐配管１３１に第１貯留薬液が流入する。分岐配管１３１に流入した第１貯留薬液は、分岐配管１３１により第１貯留部１１１に戻される。濃度計１３２は、分岐配管１３１に配置されて、分岐配管１３１を流通する第１貯留薬液に含まれる硫酸の濃度を測定する。硫酸の濃度の測定結果は、制御装置２００（制御部２０１）に入力される。 The branch pipe 131 branches off from the first circulation pipe 112 and extends to the first storage section 111. Therefore, the first stored chemical liquid flows from the first circulation pipe 112 into the branch pipe 131. The first stored chemical liquid that flows into the branch pipe 131 is returned to the first storage section 111 by the branch pipe 131. The concentration meter 132 is disposed in the branch pipe 131 and measures the concentration of sulfuric acid contained in the first stored chemical liquid flowing through the branch pipe 131. The measurement result of the sulfuric acid concentration is input to the control device 200 (control section 201).
　続いて、第１補充部１４０を説明する。第１補充部１４０は、第１貯留部１１１に硫酸の新液を補充する。第１補充部１４０は、制御装置２００（制御部２０１）によって制御される。例えば、制御装置２００（制御部２０１）は、第１貯留薬液に含まれる硫酸の濃度が第１設定値以下になると、第１補充部１４０から第１貯留部１１１へ硫酸（新液）を補充させて、第１貯留薬液に含まれる硫酸の濃度を所定値に維持させる。また、制御装置２００（制御部２０１）は、第１貯留部１１１に貯留されている第１貯留薬液の量が第２設定値以下になると、第１補充部１４０から第１貯留部１１１へ硫酸（新液）を補充させる。 Next, the first replenishing unit 140 will be described. The first replenishing unit 140 replenishing the first storage unit 111 with new sulfuric acid. The first replenishing unit 140 is controlled by the control device 200 (control unit 201). For example, when the concentration of sulfuric acid contained in the first stored chemical liquid becomes equal to or lower than a first set value, the control device 200 (control unit 201) causes the first replenishing unit 140 to replenishing the first storage unit 111 with sulfuric acid (new liquid) to maintain the concentration of sulfuric acid contained in the first stored chemical liquid at a predetermined value. In addition, when the amount of the first stored chemical liquid stored in the first storage unit 111 becomes equal to or lower than a second set value, the control device 200 (control unit 201) causes the first replenishing unit 140 to replenishing the first storage unit 111 with sulfuric acid (new liquid).
　より具体的には、図２に示すように、第１補充部１４０は、第１補充配管１４１と、第１補充開閉弁１４２とを有する。第１補充配管１４１は、基板処理装置１００が設置されている工場の用力設備に接続している。第１補充配管１４１の一部は、第１薬液キャビネット１０１に収容される。第１補充配管１４１は、硫酸が流通する管状の部材であり、硫酸を第１貯留部１１１まで流通させる。第１補充開閉弁１４２は、第１補充配管１４１に配置される。第１補充開閉弁１４２は、第１補充配管１４１から第１貯留部１１１への硫酸の供給と供給停止とを制御する。第１補充開閉弁１４２は、第１薬液キャビネット１０１の外部に配置されてもよいし、第１薬液キャビネット１０１の内部に収容されてもよい。第１補充開閉弁１４２のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第１補充開閉弁１４２の開閉は、制御装置２００（制御部２０１）によって制御される。 More specifically, as shown in FIG. 2, the first replenishment section 140 has a first replenishment pipe 141 and a first replenishment on-off valve 142. The first replenishment pipe 141 is connected to the power equipment of the factory in which the substrate processing apparatus 100 is installed. A part of the first replenishment pipe 141 is housed in the first chemical liquid cabinet 101. The first replenishment pipe 141 is a tubular member through which sulfuric acid flows, and causes the sulfuric acid to flow to the first storage section 111. The first replenishment on-off valve 142 is disposed in the first replenishment pipe 141. The first replenishment on-off valve 142 controls the supply and stop of the supply of sulfuric acid from the first replenishment pipe 141 to the first storage section 111. The first replenishment on-off valve 142 may be disposed outside the first chemical liquid cabinet 101 or may be housed inside the first chemical liquid cabinet 101. The actuator of the first replenishment on-off valve 142 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the first refill valve 142 is controlled by the control device 200 (control unit 201).
　詳しくは、既に説明したように、第１貯留部１１１には、回収された第２ＳＰＭが流入する。第２ＳＰＭは、硫酸と過酸化水素水との混合液であるため、第１貯留部１１１に第２ＳＰＭが流入することにより、第１貯留薬液に含まれる硫酸の濃度が低下する。 In more detail, as already explained, the recovered second SPM flows into the first storage section 111. Since the second SPM is a mixture of sulfuric acid and hydrogen peroxide, the flow of the second SPM into the first storage section 111 reduces the concentration of sulfuric acid contained in the first stored chemical solution.
　制御装置２００（制御部２０１）は、濃度測定部１３０（濃度計１３２）の測定結果が第１設定値以下になると、第１補充開閉弁１４２を開く。この結果、第１補充配管１４１から第１貯留部１１１に硫酸（新液）が流入して、第１貯留薬液に含まれる硫酸の濃度が増加する。制御装置２００（制御部２０１）は、濃度測定部１３０（濃度計１３２）の測定結果が第１設定値に達すると、第１補充開閉弁１４２を閉じる。この結果、第１貯留薬液に含まれる硫酸の濃度が所定値で維持される。なお、新液における硫酸の濃度は、例えば、９６％又は９８％である。第１設定値は、例えば、９０％又は８９％である。 When the measurement result of the concentration measurement unit 130 (concentration meter 132) falls below the first set value, the control device 200 (control unit 201) opens the first refill on-off valve 142. As a result, sulfuric acid (new liquid) flows from the first refill piping 141 into the first storage unit 111, and the concentration of sulfuric acid contained in the first stored chemical liquid increases. When the measurement result of the concentration measurement unit 130 (concentration meter 132) reaches the first set value, the control device 200 (control unit 201) closes the first refill on-off valve 142. As a result, the concentration of sulfuric acid contained in the first stored chemical liquid is maintained at a predetermined value. The concentration of sulfuric acid in the new liquid is, for example, 96% or 98%. The first set value is, for example, 90% or 89%.
　また、既に説明したように、第１貯留部１１１に第２ＳＰＭが流入する一方で、第１ＳＰＭによる基板処理に使用された第１貯留薬液は排液される。したがって、流入する第２ＳＰＭの量と排液される第１貯留薬液の量とのバランスによっては、第１貯留部１１１に貯留されている第１貯留薬液の量が減少することがある。 As already explained, while the second SPM flows into the first storage section 111, the first stored chemical liquid used in substrate processing with the first SPM is drained. Therefore, depending on the balance between the amount of the second SPM flowing in and the amount of the first stored chemical liquid drained, the amount of the first stored chemical liquid stored in the first storage section 111 may decrease.
　制御装置２００（制御部２０１）は、第１貯留部１１１に貯留されている第１貯留薬液の量が第２設定値以下になると、第１補充開閉弁１４２を開く。この結果、第１補充配管１４１から第１貯留部１１１に硫酸（新液）が流入して、第１貯留部１１１に貯留されている第１貯留薬液の量が増加する。制御装置２００（制御部２０１）は、第１貯留部１１１に貯留されている第１貯留薬液の量が第３設定値に達すると、第１補充開閉弁１４２を閉じる。第３設定値は、第２設定値よりも大きい値を示す。なお、第１貯留部１１１には、第１貯留部１１１に貯留されている第１貯留薬液の量に対応する値を検出するレベルメータ（図示せず）が設けられている。制御装置２００（制御部２０１）は、レベルメータの検出結果に基づいて、第１貯留部１１１に貯留されている第１貯留薬液の量が第２設定値以下であるか否かを判定する。 The control device 200 (control unit 201) opens the first replenishment on-off valve 142 when the amount of the first stored chemical liquid stored in the first storage unit 111 falls below the second set value. As a result, sulfuric acid (new liquid) flows from the first replenishment piping 141 into the first storage unit 111, and the amount of the first stored chemical liquid stored in the first storage unit 111 increases. The control device 200 (control unit 201) closes the first replenishment on-off valve 142 when the amount of the first stored chemical liquid stored in the first storage unit 111 reaches a third set value. The third set value indicates a value greater than the second set value. The first storage unit 111 is provided with a level meter (not shown) that detects a value corresponding to the amount of the first stored chemical liquid stored in the first storage unit 111. The control device 200 (control unit 201) determines whether the amount of the first stored chemical liquid stored in the first storage unit 111 is equal to or less than the second set value based on the detection result of the level meter.
　また、既に説明したように、基板Ｗから第２ＳＰＭが排出される際には、基板Ｗからレジスト膜の残渣物も基板Ｗから排出される。したがって、第１貯留薬液の清浄度がレジスト膜の残渣物により低下する可能性がある。 Furthermore, as already explained, when the second SPM is discharged from the substrate W, the resist film residue is also discharged from the substrate W. Therefore, the cleanliness of the first stored chemical liquid may be reduced due to the resist film residue.
　制御装置２００（制御部２０１）は、例えば一定時間ごとに、第１貯留部１１１に貯留されている第１貯留薬液を硫酸の新液と交換する液交換処理を実行する。具体的には、制御装置２００（制御部２０１）は、第１貯留部１１１内の第１貯留薬液を、第１貯留部１１１に接続する排液ライン（図示せず）から排出させた後、第１補充開閉弁１４２を開く。この結果、第１補充配管１４１から第１貯留部１１１に硫酸（新液）が補充される。制御装置２００（制御部２０１）は、第１貯留部１１１内の硫酸（新液）の量が第３設定値に達すると、第１補充開閉弁１４２を閉じる。 The control device 200 (control unit 201) executes a liquid exchange process to exchange the first stored chemical liquid stored in the first storage unit 111 with fresh sulfuric acid liquid, for example at regular time intervals. Specifically, the control device 200 (control unit 201) opens the first replenishment opening/closing valve 142 after discharging the first stored chemical liquid in the first storage unit 111 from a drainage line (not shown) connected to the first storage unit 111. As a result, sulfuric acid (fresh liquid) is replenished from the first replenishment piping 141 to the first storage unit 111. The control device 200 (control unit 201) closes the first replenishment opening/closing valve 142 when the amount of sulfuric acid (fresh liquid) in the first storage unit 111 reaches a third set value.
　続いて、第２補充部１７０を説明する。第２補充部１７０は、第２貯留部１５１に硫酸の新液を補充する。第２補充部１７０は、制御装置２００（制御部２０１）によって制御される。例えば、制御装置２００（制御部２０１）は、第２貯留部１５１に貯留されている第２貯留薬液の量が第４設定値以下になると、第２補充部１７０から第２貯留部１５１へ硫酸（新液）を補充させる。 Next, the second replenishing unit 170 will be described. The second replenishing unit 170 replenishes new sulfuric acid solution to the second storage unit 151. The second replenishing unit 170 is controlled by the control device 200 (control unit 201). For example, when the amount of the second stored chemical solution stored in the second storage unit 151 falls below a fourth set value, the control device 200 (control unit 201) causes the second replenishing unit 170 to replenish sulfuric acid (new solution) to the second storage unit 151.
　より具体的には、図２に示すように、第２補充部１７０は、第２補充配管１７１と、第２補充開閉弁１７２とを有する。第２補充配管１７１は、基板処理装置１００が設置されている工場の用力設備に接続している。第２補充配管１７１の一部は、第２薬液キャビネット１０３に収容される。第２補充配管１７１は、硫酸が流通する管状の部材であり、硫酸を第２貯留部１５１まで流通させる。第２補充開閉弁１７２は、第２補充配管１７１に配置される。第２補充開閉弁１７２は、第２補充配管１７１から第２貯留部１５１への硫酸の供給と供給停止とを制御する。第２補充開閉弁１７２は、第２薬液キャビネット１０３の外部に配置されてもよいし、第２薬液キャビネット１０３の内部に収容されてもよい。第２補充開閉弁１７２のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第２補充開閉弁１７２の開閉は、制御装置２００（制御部２０１）によって制御される。 More specifically, as shown in FIG. 2, the second replenishment section 170 has a second replenishment pipe 171 and a second replenishment on-off valve 172. The second replenishment pipe 171 is connected to the power utility equipment of the factory in which the substrate processing apparatus 100 is installed. A portion of the second replenishment pipe 171 is housed in the second chemical cabinet 103. The second replenishment pipe 171 is a tubular member through which sulfuric acid flows, and causes the sulfuric acid to flow to the second storage section 151. The second replenishment on-off valve 172 is disposed in the second replenishment pipe 171. The second replenishment on-off valve 172 controls the supply and stop of sulfuric acid from the second replenishment pipe 171 to the second storage section 151. The second replenishment on-off valve 172 may be disposed outside the second chemical cabinet 103 or may be housed inside the second chemical cabinet 103. The actuator of the second replenishment on-off valve 172 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the second refill valve 172 is controlled by the control device 200 (control unit 201).
　より詳しくは、第２貯留部１５１は回収ラインＬ３と接続されていない。したがって、第２ＳＰＭによる基板処理が行わる度に、第２貯留部１５１に貯留されている第２貯留薬液の量は減少する。 More specifically, the second storage section 151 is not connected to the recovery line L3. Therefore, the amount of the second stored chemical liquid stored in the second storage section 151 decreases each time a substrate is processed by the second SPM.
　制御装置２００（制御部２０１）は、第２貯留部１５１に貯留されている第２貯留薬液の量が第４設定値以下になると、第２補充開閉弁１７２を開く。この結果、第２補充配管１７１から第２貯留部１５１に硫酸（新液）が流入して、第２貯留部１５１に貯留されている第２貯留薬液の量が増加する。制御装置２００（制御部２０１）は、第２貯留部１５１に貯留されている第２貯留薬液の量が第５設定値に達すると、第２補充開閉弁１７２を閉じる。第５設定値は、第４設定値よりも大きい値を示す。なお、第２貯留部１５１には、第２貯留部１５１に貯留されている第２貯留薬液の量に対応する値を検出するレベルメータ（図示せず）が設けられている。制御装置２００（制御部２０１）は、レベルメータの検出結果に基づいて、第２貯留部１５１に貯留されている第２貯留薬液の量が第４設定値以下であるか否かを判定する。 The control device 200 (control unit 201) opens the second replenishment on-off valve 172 when the amount of the second stored chemical liquid stored in the second storage unit 151 falls below the fourth set value. As a result, sulfuric acid (new liquid) flows from the second replenishment piping 171 into the second storage unit 151, and the amount of the second stored chemical liquid stored in the second storage unit 151 increases. The control device 200 (control unit 201) closes the second replenishment on-off valve 172 when the amount of the second stored chemical liquid stored in the second storage unit 151 reaches the fifth set value. The fifth set value indicates a value greater than the fourth set value. The second storage unit 151 is provided with a level meter (not shown) that detects a value corresponding to the amount of the second stored chemical liquid stored in the second storage unit 151. The control device 200 (control unit 201) determines whether the amount of the second stored chemical liquid stored in the second storage unit 151 is equal to or less than the fourth set value based on the detection result of the level meter.
　続いて、図３を参照して、第１供給部１２０と、第２供給部１６０（第１供給ラインＬ１）とを説明する。図３は、本実施形態の基板処理装置１００に含まれる第１供給部１２０及び第２供給部１６０の構成を示す図である。 Next, the first supply unit 120 and the second supply unit 160 (first supply line L1) will be described with reference to FIG. 3. FIG. 3 is a diagram showing the configuration of the first supply unit 120 and the second supply unit 160 included in the substrate processing apparatus 100 of this embodiment.
　図３に示すように、第１供給部１２０は、第１流量計１２３と、第１流量調整弁１２４と、第１供給開閉弁１２５と、第１戻り開閉弁１２６とを更に有する。第１流量計１２３、第１流量調整弁１２４、第１供給開閉弁１２５、及び第１戻り開閉弁１２６は、図１を参照して説明した流体ボックス１０５内に収容される。 As shown in FIG. 3, the first supply unit 120 further includes a first flow meter 123, a first flow control valve 124, a first supply on-off valve 125, and a first return on-off valve 126. The first flow meter 123, the first flow control valve 124, the first supply on-off valve 125, and the first return on-off valve 126 are housed in the fluid box 105 described with reference to FIG. 1.
　第１流量計１２３、第１流量調整弁１２４、及び第１供給開閉弁１２５は第１供給配管１２１に配置される。詳しくは、第１供給配管１２１の上流側から下流側に向かって、第１流量計１２３と、第１流量調整弁１２４と、第１供給開閉弁１２５とがこの順に配置される。 The first flow meter 123, the first flow control valve 124, and the first supply on-off valve 125 are arranged in the first supply pipe 121. In detail, the first flow meter 123, the first flow control valve 124, and the first supply on-off valve 125 are arranged in this order from the upstream side to the downstream side of the first supply pipe 121.
　第１流量計１２３は、第１供給配管１２１を流通する第１貯留薬液の流量を測定する。第１流量計１２３の測定結果は、制御装置２００（制御部２０１）に入力される。 The first flowmeter 123 measures the flow rate of the first stored chemical liquid flowing through the first supply pipe 121. The measurement results of the first flowmeter 123 are input to the control device 200 (control unit 201).
　第１流量調整弁１２４は、第１供給配管１２１を流通する第１貯留薬液の流量を調整する。第１流量調整弁１２４は、開度の調整が可能であり、第１貯留薬液の流量は、第１流量調整弁１２４の開度に応じた大きさになる。第１流量調整弁１２４のアクチュエータは、例えば、電動アクチュエータである。第１流量調整弁１２４は、例えば、モーターニードルバルブであってもよい。 The first flow rate control valve 124 adjusts the flow rate of the first stored chemical liquid flowing through the first supply pipe 121. The opening degree of the first flow rate control valve 124 can be adjusted, and the flow rate of the first stored chemical liquid is a magnitude according to the opening degree of the first flow rate control valve 124. The actuator of the first flow rate control valve 124 is, for example, an electric actuator. The first flow rate control valve 124 may be, for example, a motor needle valve.
　第１流量調整弁１２４の開度は、制御装置２００（制御部２０１）によって制御される。詳しくは、制御装置２００（制御部２０１）は、第１流量計１２３の測定結果に基づいて第１流量調整弁１２４の開度を調整する。 The opening degree of the first flow rate adjustment valve 124 is controlled by the control device 200 (control unit 201). In detail, the control device 200 (control unit 201) adjusts the opening degree of the first flow rate adjustment valve 124 based on the measurement result of the first flow meter 123.
　第１供給開閉弁１２５は、第１供給配管１２１から第２供給配管１６１（第１供給ラインＬ１）への第１貯留薬液の供給と供給停止とを制御する。第１供給開閉弁１２５のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第１供給開閉弁１２５の開閉は、制御装置２００（制御部２０１）によって制御される。第１供給開閉弁１２５は、「切替部」の一例である。 The first supply on-off valve 125 controls the supply and stop of the first stored chemical liquid from the first supply pipe 121 to the second supply pipe 161 (first supply line L1). The actuator of the first supply on-off valve 125 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the first supply on-off valve 125 is controlled by the control device 200 (control unit 201). The first supply on-off valve 125 is an example of a "switching unit."
　第１戻り開閉弁１２６は、第１戻り配管１２２に配置される。第１戻り配管１２２の一端は、第１流量調整弁１２４と第１供給開閉弁１２５との間で第１供給配管１２１に接続する。第１戻り開閉弁１２６は、第１戻り配管１２２から第１循環配管１１２（第１循環部１１０）への第１貯留薬液の供給と供給停止とを制御する。第１戻り開閉弁１２６のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第１戻り開閉弁１２６の開閉は、制御装置２００（制御部２０１）によって制御される。 The first return on-off valve 126 is disposed in the first return pipe 122. One end of the first return pipe 122 is connected to the first supply pipe 121 between the first flow rate control valve 124 and the first supply on-off valve 125. The first return on-off valve 126 controls the supply and stop of the first stored chemical liquid from the first return pipe 122 to the first circulation pipe 112 (first circulation section 110). The actuator of the first return on-off valve 126 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the first return on-off valve 126 is controlled by the control device 200 (control section 201).
　続いて、第２供給部１６０を説明する。図３に示すように、第２供給部１６０は、第３加熱部材１６３と、第２流量計１６４と、第２流量調整弁１６５と、第２供給開閉弁１６６と、第２戻り開閉弁１６７とを更に有する。第３加熱部材１６３、第２流量計１６４、第２流量調整弁１６５、第２供給開閉弁１６６、及び第２戻り開閉弁１６７は、図１を参照して説明した流体ボックス１０５内に収容される。 Next, the second supply unit 160 will be described. As shown in FIG. 3, the second supply unit 160 further includes a third heating member 163, a second flow meter 164, a second flow control valve 165, a second supply on-off valve 166, and a second return on-off valve 167. The third heating member 163, the second flow meter 164, the second flow control valve 165, the second supply on-off valve 166, and the second return on-off valve 167 are housed in the fluid box 105 described with reference to FIG. 1.
　第３加熱部材１６３、第２流量計１６４、第２流量調整弁１６５、及び第２供給開閉弁１６６は第２供給配管１６１に配置される。詳しくは、第２供給配管１６１の上流側から下流側に向かって、第３加熱部材１６３と、第２流量計１６４と、第２流量調整弁１６５と、第２供給開閉弁１６６とがこの順に配置される。なお、第１供給配管１２１は、第３加熱部材１６３の上流側で第２供給配管１６１に接続する。 The third heating element 163, the second flow meter 164, the second flow control valve 165, and the second supply on-off valve 166 are arranged in the second supply pipe 161. More specifically, the third heating element 163, the second flow meter 164, the second flow control valve 165, and the second supply on-off valve 166 are arranged in this order from the upstream side to the downstream side of the second supply pipe 161. The first supply pipe 121 is connected to the second supply pipe 161 upstream of the third heating element 163.
　第３加熱部材１６３は、第２供給配管１６１を流通する薬液を加熱する。詳しくは、第３加熱部材１６３は、第１ＳＰＭによる基板処理を行う際に、第１貯留薬液と第２貯留薬液との混合液を加熱する。また、第３加熱部材１６３は、第２ＳＰＭによる基板処理を行う際に、第２貯留薬液を加熱する。例えば、第３加熱部材１６３は、第２供給配管１６１を流通する薬液（第１貯留薬液と第２貯留薬液との混合液、及び、第２貯留薬液）を１７０℃で加熱する。以下、第１貯留薬液と第２貯留薬液との混合液を、「貯留混合液」と記載する場合がある。 The third heating member 163 heats the chemical liquid flowing through the second supply pipe 161. More specifically, the third heating member 163 heats the mixture of the first and second stored chemical liquids when performing substrate processing with the first SPM. The third heating member 163 also heats the second stored chemical liquid when performing substrate processing with the second SPM. For example, the third heating member 163 heats the chemical liquids flowing through the second supply pipe 161 (the mixture of the first and second stored chemical liquids, and the second stored chemical liquid) to 170°C. Hereinafter, the mixture of the first and second stored chemical liquids may be referred to as the "stored mixed liquid."
　第２流量計１６４は、第２供給配管１６１を流通する薬液（第２貯留液、及び貯留混合液）の流量を測定する。第２流量計１６４の測定結果は、制御装置２００（制御部２０１）に入力される。 The second flowmeter 164 measures the flow rate of the chemical liquid (the second stored liquid and the stored mixed liquid) flowing through the second supply pipe 161. The measurement results of the second flowmeter 164 are input to the control device 200 (control unit 201).
　第２流量調整弁１６５は、第２供給配管１６１を流通する薬液（第２貯留液、及び貯留混合液）の流量を調整する。第２流量調整弁１６５は、開度の調整が可能であり、第２供給配管１６１を流通する薬液（第２貯留液、及び貯留混合液）の流量は、第２流量調整弁１６５の開度に応じた大きさになる。第２流量調整弁１６５のアクチュエータは、例えば、電動アクチュエータである。第２流量調整弁１６５は、例えば、モーターニードルバルブであってもよい。 The second flow rate control valve 165 adjusts the flow rate of the chemical liquid (second stored liquid and stored mixed liquid) flowing through the second supply pipe 161. The second flow rate control valve 165 is capable of adjusting its opening, and the flow rate of the chemical liquid (second stored liquid and stored mixed liquid) flowing through the second supply pipe 161 corresponds to the opening rate of the second flow rate control valve 165. The actuator of the second flow rate control valve 165 is, for example, an electric actuator. The second flow rate control valve 165 may be, for example, a motor needle valve.
　第２流量調整弁１６５の開度は、制御装置２００（制御部２０１）によって制御される。詳しくは、制御装置２００（制御部２０１）は、第２流量計１６４の測定結果に基づいて第２流量調整弁１６５の開度を調整する。 The opening degree of the second flow rate adjustment valve 165 is controlled by the control device 200 (control unit 201). In detail, the control device 200 (control unit 201) adjusts the opening degree of the second flow rate adjustment valve 165 based on the measurement result of the second flow meter 164.
　第２供給開閉弁１６６は、第２供給配管１６１からノズル２への薬液（第２貯留薬液、及び貯留混合液）の供給と供給停止とを制御する。第２供給開閉弁１６６のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第２供給開閉弁１６６の開閉は、制御装置２００（制御部２０１）によって制御される。 The second supply on-off valve 166 controls the supply and stop of the chemical liquid (the second stored chemical liquid and the stored mixed liquid) from the second supply pipe 161 to the nozzle 2. The actuator of the second supply on-off valve 166 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the second supply on-off valve 166 is controlled by the control device 200 (control unit 201).
　第２戻り開閉弁１６７は、第２戻り配管１６２に配置される。第２戻り配管１６２の一端は、第２流量調整弁１６５と第２供給開閉弁１６６との間で第２供給配管１６１に接続する。第２戻り開閉弁１６７は、第２戻り配管１６２から第２循環配管１５２（第２循環部１５０）への第２貯留薬液の供給と供給停止とを制御する。第２戻り開閉弁１６７のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第２戻り開閉弁１６７の開閉は、制御装置２００（制御部２０１）によって制御される。 The second return on-off valve 167 is disposed in the second return pipe 162. One end of the second return pipe 162 is connected to the second supply pipe 161 between the second flow rate control valve 165 and the second supply on-off valve 166. The second return on-off valve 167 controls the supply and stop of the second stored chemical liquid from the second return pipe 162 to the second circulation pipe 152 (second circulation section 150). The actuator of the second return on-off valve 167 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the second return on-off valve 167 is controlled by the control device 200 (control section 201).
　続いて、図３～図５を参照して、第１供給部１２０と、第２供給部１６０（第１供給ラインＬ１）とを説明する。図３は、第１ＳＰＭによる基板処理と、第２ＳＰＭによる基板処理とが行われていないときの第１供給部１２０と第２供給部１６０とを示す。 Next, the first supply unit 120 and the second supply unit 160 (first supply line L1) will be described with reference to Figures 3 to 5. Figure 3 shows the first supply unit 120 and the second supply unit 160 when substrate processing by the first SPM and substrate processing by the second SPM are not being performed.
　図３に示すように、第１ＳＰＭによる基板処理と、第２ＳＰＭによる基板処理とが行われていないとき、制御装置２００（制御部２０１）は、第１供給開閉弁１２５と第２供給開閉弁１６６とを閉状態とし、第１戻り開閉弁１２６と第２戻り開閉弁１６７とを開状態とする。この結果、第１循環配管１１２から第１供給配管１２１に流入した第１貯留薬液が、第１戻り配管１２２を介して第１循環配管１１２に戻る。また、第２循環配管１５２から第２供給配管１６１に流入した第２貯留薬液が、第２戻り配管１６２を介して第２循環配管１５２に戻る。 As shown in FIG. 3, when substrate processing by the first SPM and substrate processing by the second SPM are not being performed, the control device 200 (control unit 201) closes the first supply on-off valve 125 and the second supply on-off valve 166 and opens the first return on-off valve 126 and the second return on-off valve 167. As a result, the first stored chemical liquid that flows from the first circulation pipe 112 to the first supply pipe 121 returns to the first circulation pipe 112 via the first return pipe 122. Also, the second stored chemical liquid that flows from the second circulation pipe 152 to the second supply pipe 161 returns to the second circulation pipe 152 via the second return pipe 162.
　図４は、第１ＳＰＭによる基板処理が行われている際の第１供給部１２０と第２供給部１６０とを示す図である。図４に示すように、第１ＳＰＭによる基板処理が行われている際に、制御装置２００（制御部２０１）は、第１供給開閉弁１２５と第２供給開閉弁１６６とを開状態とし、第１戻り開閉弁１２６と第２戻り開閉弁１６７とを閉状態とする。この結果、第２供給配管１６１に第１貯留薬液が流入して、第１貯留薬液と第２貯留薬液との混合液（貯留混合液）が第２供給配管１６１を介してノズル２に供給される。 FIG. 4 is a diagram showing the first supply unit 120 and the second supply unit 160 when substrate processing is being performed by the first SPM. As shown in FIG. 4, when substrate processing is being performed by the first SPM, the control device 200 (control unit 201) opens the first supply on-off valve 125 and the second supply on-off valve 166, and closes the first return on-off valve 126 and the second return on-off valve 167. As a result, the first stored chemical liquid flows into the second supply pipe 161, and a mixture of the first and second stored chemical liquids (stored mixed liquid) is supplied to the nozzle 2 via the second supply pipe 161.
　このとき、第３加熱部材１６３は第１貯留薬液と第２貯留薬液との混合液（貯留混合液）を１７０℃で加熱する。また、制御装置２００（制御部２０１）は、第２供給配管１６１を流通する第１貯留薬液と第２貯留薬液との混合液（貯留混合液）の流量が第１所定流量となるように、第１流量調整弁１２４の開度と、第２流量調整弁１６５の開度とを調整する。 At this time, the third heating element 163 heats the mixture (reserved mixed liquid) of the first and second stored chemical liquids to 170°C. The control device 200 (control unit 201) also adjusts the opening degree of the first flow rate adjustment valve 124 and the opening degree of the second flow rate adjustment valve 165 so that the flow rate of the mixture (reserved mixed liquid) of the first and second stored chemical liquids circulating through the second supply pipe 161 becomes the first predetermined flow rate.
　図５は、第２ＳＰＭによる基板処理が行われている際の第１供給部１２０と第２供給部１６０とを示す図である。図５に示すように、第２ＳＰＭによる基板処理が行われている際に、制御装置２００（制御部２０１）は、第１供給開閉弁１２５を閉状態とし、第２供給開閉弁１６６を開状態とし、第１戻り開閉弁１２６を開状態とし、第２戻り開閉弁１６７を閉状態とする。この結果、第１循環配管１１２から第１供給配管１２１に流入した第１貯留薬液が、第１戻り配管１２２を介して第１循環配管１１２に戻る。また、第２循環配管１５２から第２供給配管１６１に流入した第２貯留薬液が、第２供給配管１６１を介してノズル２に供給される。 5 is a diagram showing the first supply unit 120 and the second supply unit 160 when the substrate is processed by the second SPM. As shown in FIG. 5, when the substrate is processed by the second SPM, the control device 200 (control unit 201) closes the first supply on-off valve 125, opens the second supply on-off valve 166, opens the first return on-off valve 126, and closes the second return on-off valve 167. As a result, the first stored chemical liquid that flows from the first circulation pipe 112 to the first supply pipe 121 returns to the first circulation pipe 112 via the first return pipe 122. Also, the second stored chemical liquid that flows from the second circulation pipe 152 to the second supply pipe 161 is supplied to the nozzle 2 via the second supply pipe 161.
　このとき、第３加熱部材１６３は第２貯留薬液を１７０℃で加熱する。また、制御装置２００（制御部２０１）は、第２供給配管１６１を流通する第２貯留薬液の流量が第２所定流量となるように、第２流量調整弁１６５の開度を調整する。 At this time, the third heating element 163 heats the second stored chemical liquid to 170°C. In addition, the control device 200 (control unit 201) adjusts the opening of the second flow rate adjustment valve 165 so that the flow rate of the second stored chemical liquid flowing through the second supply pipe 161 becomes a second predetermined flow rate.
　続いて、図６を参照して、基板処理部１を説明する。図６は、本実施形態の基板処理装置１００に含まれる基板処理部１の構成を模式的に示す断面図である。 Next, the substrate processing unit 1 will be described with reference to FIG. 6. FIG. 6 is a cross-sectional view that shows a schematic configuration of the substrate processing unit 1 included in the substrate processing apparatus 100 of this embodiment.
　図６に示すように、基板処理部１は、基板保持部５と、基板回転部６と、第１昇降部７と、第２昇降部８と、ノズル移動機構１０とを更に有する。また、基板処理装置１００は、第２供給ラインＬ４と、第３供給ラインＬ５とを更に備える。 As shown in FIG. 6, the substrate processing unit 1 further includes a substrate holding unit 5, a substrate rotating unit 6, a first lifting unit 7, a second lifting unit 8, and a nozzle moving mechanism 10. The substrate processing apparatus 100 further includes a second supply line L4 and a third supply line L5.
　基板Ｗは、チャンバ１ａ内に搬入されて、チャンバ１ａ内で処理される。チャンバ１ａは、基板保持部５と、基板回転部６と、第１昇降部７と、第２昇降部８と、ノズル移動機構１０と、第２供給ラインＬ４の一部と、第３供給ラインＬ５の一部とを更に収容する。 The substrate W is loaded into chamber 1a and processed therein. Chamber 1a further accommodates a substrate holder 5, a substrate rotator 6, a first lifting unit 7, a second lifting unit 8, a nozzle movement mechanism 10, a portion of the second supply line L4, and a portion of the third supply line L5.
　基板保持部５は、基板Ｗを保持する。基板保持部５は、制御装置２００（制御部２０１）によって制御される。より具体的には、基板保持部５は、基板Ｗを水平な姿勢で保持する。基板保持部５は、例えば、スピンチャックである。基板保持部５は、スピンベース５１と、複数のチャック部材５３とを有してもよい。 The substrate holding unit 5 holds the substrate W. The substrate holding unit 5 is controlled by the control device 200 (control unit 201). More specifically, the substrate holding unit 5 holds the substrate W in a horizontal position. The substrate holding unit 5 is, for example, a spin chuck. The substrate holding unit 5 may have a spin base 51 and multiple chuck members 53.
　スピンベース５１は、略円板状であり、水平な姿勢で複数のチャック部材５３を支持する。複数のチャック部材５３は、スピンベース５１の周縁部に配置される。複数のチャック部材５３は、基板Ｗの周縁部を挟持する。複数のチャック部材５３により、基板Ｗが水平な姿勢で保持される。複数のチャック部材５３は、制御装置２００（制御部２０１）によって制御される。複数のチャック部材５３は、基板Ｗの中心がスピンベース５１の中心と一致するように配置されている。 The spin base 51 is approximately disk-shaped and supports multiple chuck members 53 in a horizontal position. The multiple chuck members 53 are arranged on the peripheral portion of the spin base 51. The multiple chuck members 53 clamp the peripheral portion of the substrate W. The multiple chuck members 53 hold the substrate W in a horizontal position. The multiple chuck members 53 are controlled by the control device 200 (control unit 201). The multiple chuck members 53 are arranged so that the center of the substrate W coincides with the center of the spin base 51.
　基板回転部６は、鉛直方向に延びる回転軸線ＡＸ１を中心として、基板Ｗと基板保持部５とを一体に回転させる。基板回転部６は、制御装置２００（制御部２０１）によって制御される。 The substrate rotation unit 6 rotates the substrate W and the substrate holder 5 together around a rotation axis AX1 that extends vertically. The substrate rotation unit 6 is controlled by the control device 200 (control unit 201).
　詳しくは、基板回転部６は、回転軸線ＡＸ１を中心としてスピンベース５１を回転させる。したがって、スピンベース５１は、回転軸線ＡＸ１を中心として回転する。この結果、基板保持部５に保持された基板Ｗが、回転軸線ＡＸ１を中心として回転する。 In more detail, the substrate rotation unit 6 rotates the spin base 51 around the rotation axis AX1. Therefore, the spin base 51 rotates around the rotation axis AX1. As a result, the substrate W held by the substrate holding unit 5 rotates around the rotation axis AX1.
　より具体的には、基板回転部６は、例えば、モータ本体６１と、シャフト６３とを有する。シャフト６３はスピンベース５１に結合される。モータ本体６１は、シャフト６３を回転させる。その結果、スピンベース５１が回転する。モータ本体６１は、制御装置２００（制御部２０１）によって制御される。 More specifically, the substrate rotation unit 6 has, for example, a motor body 61 and a shaft 63. The shaft 63 is coupled to the spin base 51. The motor body 61 rotates the shaft 63. As a result, the spin base 51 rotates. The motor body 61 is controlled by the control device 200 (control unit 201).
　続いて、第１液受け部４１を説明する。図６に示すように、第１液受け部４１は、第２液受け部４２の内側に配置される。第１液受け部４１は、第１ガード部４１１と、第１カップ部４１２とを有する。 Next, the first liquid receiving portion 41 will be described. As shown in FIG. 6, the first liquid receiving portion 41 is disposed inside the second liquid receiving portion 42. The first liquid receiving portion 41 has a first guard portion 411 and a first cup portion 412.
　第１ガード部４１１は、基板保持部５及び基板回転部６を囲む略円筒状であり、基板保持部５及び基板回転部６の周囲に配置される。第１ガード部４１１は、回転する基板Ｗから飛散する第１ＳＰＭとリンス液とを受け止める。 The first guard part 411 is substantially cylindrical and surrounds the substrate holding part 5 and the substrate rotating part 6, and is disposed around the substrate holding part 5 and the substrate rotating part 6. The first guard part 411 receives the first SPM and rinsing liquid that are scattered from the rotating substrate W.
　第１カップ部４１２は、第１ガード部４１１の下端側に配置される。第１カップ部４１２は、第１ガード部４１１の下端の下方に、円環状の溝を形成する。第１カップ部４１２には、第１ガード部４１１の内周面から流れ落ちる第１ＳＰＭとリンス液とが収集される。排液ラインＬ２の排液配管２１は、第１カップ部４１２の底部に接続している。排液配管２１に、第１カップ部４１２において収集された第１ＳＰＭとリンス液とが流入する。 The first cup portion 412 is disposed on the lower end side of the first guard portion 411. The first cup portion 412 forms an annular groove below the lower end of the first guard portion 411. The first cup portion 412 collects the first SPM and rinsing liquid that flow down from the inner surface of the first guard portion 411. The drainage pipe 21 of the drainage line L2 is connected to the bottom of the first cup portion 412. The first SPM and rinsing liquid collected in the first cup portion 412 flow into the drainage pipe 21.
　続いて、第２液受け部４２を説明する。図６に示すように、第２液受け部４２は、第２ガード部４２１と、第２カップ部４２２とを有する。第２ガード部４２１は、第１ガード部４１１を囲む略円筒状であり、第１ガード部４１１の周囲に配置される。第２ガード部４２１は、回転する基板Ｗから飛散する第２ＳＰＭを受け止める。第２カップ部４２２は、第２ガード部４２１の下端側に配置される。第２カップ部４２２は、第２ガード部４２１の下端の下方に、円環状の溝を形成する。第２カップ部４２２には、第２ガード部４２１の内周面から流れ落ちる第２ＳＰＭが収集される。回収ラインＬ３の第１回収配管３１は、第２カップ部４２２の底部に接続している。第１回収配管３１に、第２カップ部４２２において収集された第２ＳＰＭが流入する。 Next, the second liquid receiving section 42 will be described. As shown in FIG. 6, the second liquid receiving section 42 has a second guard section 421 and a second cup section 422. The second guard section 421 is substantially cylindrical and surrounds the first guard section 411, and is disposed around the first guard section 411. The second guard section 421 receives the second SPM scattered from the rotating substrate W. The second cup section 422 is disposed on the lower end side of the second guard section 421. The second cup section 422 forms an annular groove below the lower end of the second guard section 421. The second cup section 422 collects the second SPM that flows down from the inner peripheral surface of the second guard section 421. The first recovery pipe 31 of the recovery line L3 is connected to the bottom of the second cup section 422. The second SPM collected in the second cup section 422 flows into the first recovery pipe 31.
　なお、図６に示すように、液受け部４は、第３液受け部４３を更に有する。第３液受け部４３は、ガード部である。第３液受け部４３の詳しい説明は省略する。 As shown in FIG. 6, the liquid receiving portion 4 further includes a third liquid receiving portion 43. The third liquid receiving portion 43 is a guard portion. A detailed description of the third liquid receiving portion 43 will be omitted.
　続いて、第１昇降部７を説明する。第１昇降部７は、第１ガード部４１１、第２ガード部４２１、及び第３液受け部４３（ガード部）を個別に昇降させる。第１昇降部７は、制御装置２００（制御部２０１）によって制御される。具体的には、第１昇降部７は、第１ガード部４１１、第２ガード部４２１、及び第３液受け部４３（ガード部）を、液受け位置と第１退避位置との間で個別に昇降させる。液受け位置は、第１退避位置よりも上方の位置である。第１昇降部７は、例えば、ボールねじ機構と、ボールねじ機構に駆動力を与える電動モータとを備えてもよい。 Next, the first lifting unit 7 will be described. The first lifting unit 7 raises and lowers the first guard portion 411, the second guard portion 421, and the third liquid receiving portion 43 (guard portion) individually. The first lifting unit 7 is controlled by the control device 200 (control unit 201). Specifically, the first lifting unit 7 raises and lowers the first guard portion 411, the second guard portion 421, and the third liquid receiving portion 43 (guard portion) individually between the liquid receiving position and the first retracted position. The liquid receiving position is a position above the first retracted position. The first lifting unit 7 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
　続いて、第２供給ラインＬ４を説明する。図６に示すように、第２供給ラインＬ４は、ノズル２へ過酸化水素水を供給する。具体的には、第２供給ラインＬ４は、第３供給配管１８１と、第３供給開閉弁１８２とを有する。 Next, the second supply line L4 will be described. As shown in FIG. 6, the second supply line L4 supplies hydrogen peroxide to the nozzle 2. Specifically, the second supply line L4 has a third supply pipe 181 and a third supply on-off valve 182.
　第３供給配管１８１は、過酸化水素水が流通する管状の部材であり、ノズル２まで過酸化水素水を流通させる。第３供給開閉弁１８２は、第３供給配管１８１に配置されて、過酸化水素水のノズル２への供給と供給停止とを制御する。第３供給開閉弁１８２のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第３供給開閉弁１８２の開閉は、制御装置２００（制御部２０１）によって制御される。具体的には、制御装置２００（制御部２０１）は、第１ＳＰＭによる基板処理を行う際に第３供給開閉弁１８２を開状態にする。また、制御装置２００（制御部２０１）は、第２ＳＰＭによる基板処理を行う際に第３供給開閉弁１８２を開状態にする。 The third supply pipe 181 is a tubular member through which hydrogen peroxide flows, and causes the hydrogen peroxide to flow up to the nozzle 2. The third supply on-off valve 182 is disposed in the third supply pipe 181 and controls the supply and stop of hydrogen peroxide to the nozzle 2. The actuator of the third supply on-off valve 182 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the third supply on-off valve 182 is controlled by the control device 200 (control unit 201). Specifically, the control device 200 (control unit 201) opens the third supply on-off valve 182 when performing substrate processing with the first SPM. The control device 200 (control unit 201) also opens the third supply on-off valve 182 when performing substrate processing with the second SPM.
　続いて、ノズル２を説明する。既に説明したように、第１ＳＰＭによる基板処理の際に、第１供給ラインＬ１は、第１貯留薬液と第２貯留薬液との混合液（貯留混合液）をノズル２に供給し、第２供給ラインＬ４は、過酸化水素水をノズル２に供給する。また、第２ＳＰＭによる基板処理の際に、第１供給ラインＬ１は、第２貯留薬液をノズル２に供給し、第２供給ラインＬ４は、過酸化水素水をノズル２に供給する。 Next, nozzle 2 will be described. As already explained, when processing a substrate with the first SPM, the first supply line L1 supplies a mixture (reserved mixture) of the first and second stored chemical liquids to nozzle 2, and the second supply line L4 supplies hydrogen peroxide to nozzle 2. When processing a substrate with the second SPM, the first supply line L1 supplies the second stored chemical liquid to nozzle 2, and the second supply line L4 supplies hydrogen peroxide to nozzle 2.
　第１供給ラインＬ１から供給される薬液と第２供給ラインＬ４から供給される薬液とは、ノズル２の内部で混合される。したがって、第１ＳＰＭによる基板処理の際に、ノズル２は、貯留混合液（第１貯留薬液と第２貯留薬液との混合液）と過酸化水素水との混合液（第１ＳＰＭ）を基板Ｗに向けて吐出する。また、第２ＳＰＭによる基板処理の際に、ノズル２は、第２貯留薬液（硫酸の新液）と過酸化水素水との混合液（第２ＳＰＭ）を基板Ｗに向けて吐出する。詳しくは、ノズル２は、回転中の基板Ｗの上方から、基板Ｗの上面に向けて、第１ＳＰＭを吐出する。同様に、ノズル２は、回転中の基板Ｗの上方から、基板Ｗの上面に向けて、第２ＳＰＭを吐出する。 The chemical liquid supplied from the first supply line L1 and the chemical liquid supplied from the second supply line L4 are mixed inside the nozzle 2. Therefore, when processing a substrate with the first SPM, the nozzle 2 ejects a mixture (first SPM) of the stored mixed liquid (a mixture of the first stored chemical liquid and the second stored chemical liquid) and hydrogen peroxide solution toward the substrate W. Also, when processing a substrate with the second SPM, the nozzle 2 ejects a mixture (second SPM) of the second stored chemical liquid (fresh sulfuric acid solution) and hydrogen peroxide solution toward the substrate W. In detail, the nozzle 2 ejects the first SPM from above the rotating substrate W toward the top surface of the substrate W. Similarly, the nozzle 2 ejects the second SPM from above the rotating substrate W toward the top surface of the substrate W.
　続いて、ノズル移動機構１０を説明する。ノズル移動機構１０は、ノズル２を水平面に沿って移動させる。ノズル移動機構１０は、制御装置２００（制御部２０１）によって制御される。より詳しくは、ノズル移動機構１０は、第２退避位置と第１処理位置との間でノズル２を移動させる。第２退避位置は、基板保持部５の外側の領域に含まれる位置である。例えば、第２退避位置は、液受け部４の外側の領域に含まれる位置であってもよい。本実施形態において、第１処理位置は基板Ｗの中心に対向する位置である。ノズル２は、第１ＳＰＭ及び第２ＳＰＭを第１処理位置から基板Ｗに供給する。 Next, the nozzle movement mechanism 10 will be described. The nozzle movement mechanism 10 moves the nozzle 2 along a horizontal plane. The nozzle movement mechanism 10 is controlled by the control device 200 (control unit 201). More specifically, the nozzle movement mechanism 10 moves the nozzle 2 between a second retracted position and a first processing position. The second retracted position is a position included in an area outside the substrate holding unit 5. For example, the second retracted position may be a position included in an area outside the liquid receiving unit 4. In this embodiment, the first processing position is a position opposite the center of the substrate W. The nozzle 2 supplies the first SPM and the second SPM to the substrate W from the first processing position.
　図６に示すように、ノズル移動機構１０は、ノズルアーム１１と、ノズル基台１３と、ノズル移動部１５とを有してもよい。ノズル基台１３は鉛直方向に延びる。ノズルアーム１１の基端部はノズル基台１３に結合している。ノズルアーム１１は、ノズル基台１３から水平方向に延びる。 As shown in FIG. 6, the nozzle movement mechanism 10 may have a nozzle arm 11, a nozzle base 13, and a nozzle movement part 15. The nozzle base 13 extends vertically. The base end of the nozzle arm 11 is connected to the nozzle base 13. The nozzle arm 11 extends horizontally from the nozzle base 13.
　ノズルアーム１１は、ノズル２を支持する。ノズル２は、ノズルアーム１１から鉛直下方に向けて突出する。ノズル２は、ノズルアーム１１の先端部に配置されてもよい。 The nozzle arm 11 supports the nozzle 2. The nozzle 2 protrudes vertically downward from the nozzle arm 11. The nozzle 2 may be disposed at the tip of the nozzle arm 11.
　ノズル移動部１５は、鉛直方向に延びる回動軸線ＡＸ２を中心としてノズル基台１３を回転させる。この結果、ノズル２が回動軸線ＡＸ２を中心とする周方向に沿って移動する。ノズル移動部１５は、制御装置２００（制御部２０１）によって制御される。ノズル移動部１５は、例えば、ボールねじ機構と、ボールねじ機構に駆動力を与える電動モータとを備えてもよい。 The nozzle moving unit 15 rotates the nozzle base 13 around a rotation axis AX2 that extends vertically. As a result, the nozzle 2 moves in a circumferential direction around the rotation axis AX2. The nozzle moving unit 15 is controlled by the control device 200 (control unit 201). The nozzle moving unit 15 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
　続いて、第２昇降部８を説明する。第２昇降部８は、対向部材３を昇降させる。第２昇降部８は、制御装置２００（制御部２０１）によって制御される。具体的には、第２昇降部８は、対向部材３を第２処理位置と第３退避位置との間で昇降させる。第３退避位置は、第２処理位置よりも上方の位置である。第２昇降部８は、例えば、ボールねじ機構と、ボールねじ機構に駆動力を与える電動モータとを備えてもよい。対向部材３は、リンス液を第２処理位置から基板Ｗに供給する。 Next, the second lifting unit 8 will be described. The second lifting unit 8 raises and lowers the opposing member 3. The second lifting unit 8 is controlled by the control device 200 (control unit 201). Specifically, the second lifting unit 8 raises and lowers the opposing member 3 between the second processing position and the third retracted position. The third retracted position is a position above the second processing position. The second lifting unit 8 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The opposing member 3 supplies rinsing liquid to the substrate W from the second processing position.
　続いて、第３供給ラインＬ５及び対向部材３を説明する。図６に示すように、第３供給ラインＬ５は、対向部材３へリンス液を供給する。具体的には、第３供給ラインＬ５は、第４供給配管１９１と、第４供給開閉弁１９２とを有する。対向部材３は、ノズル３ａを有する。 Next, the third supply line L5 and the opposing member 3 will be described. As shown in FIG. 6, the third supply line L5 supplies rinsing liquid to the opposing member 3. Specifically, the third supply line L5 has a fourth supply pipe 191 and a fourth supply on-off valve 192. The opposing member 3 has a nozzle 3a.
　第４供給配管１９１は、リンス液が流通する管状の部材であり、ノズル３ａまでリンス液を流通させる。第４供給開閉弁１９２は、第４供給配管１９１に配置されて、リンス液のノズル３ａへの供給と供給停止とを制御する。第４供給開閉弁１９２のアクチュエータは、例えば、空圧アクチュエータ、又は電動アクチュエータである。第４供給開閉弁１９２の開閉は、制御装置２００（制御部２０１）によって制御される。具体的には、制御装置２００（制御部２０１）は、基板Ｗにリンス液を供給する際に第４供給開閉弁１９２を開状態にする。ノズル３ａは、回転中の基板Ｗの上方から、基板Ｗの上面に向けて、リンス液を吐出する。 The fourth supply pipe 191 is a tubular member through which the rinsing liquid flows, and causes the rinsing liquid to flow up to the nozzle 3a. The fourth supply on-off valve 192 is disposed on the fourth supply pipe 191 and controls the supply and stop of the rinsing liquid to the nozzle 3a. The actuator of the fourth supply on-off valve 192 is, for example, a pneumatic actuator or an electric actuator. The opening and closing of the fourth supply on-off valve 192 is controlled by the control device 200 (control unit 201). Specifically, the control device 200 (control unit 201) opens the fourth supply on-off valve 192 when supplying the rinsing liquid to the substrate W. The nozzle 3a ejects the rinsing liquid from above the rotating substrate W toward the top surface of the substrate W.
　続いて、図６～図８を参照して、基板処理装置１００による基板処理を説明する。図６は、第１ＳＰＭによる基板処理を行う際の基板処理部１を示している。 Next, substrate processing by the substrate processing apparatus 100 will be described with reference to Figures 6 to 8. Figure 6 shows the substrate processing unit 1 when performing substrate processing by the first SPM.
　図６に示すように、第１ＳＰＭによる基板処理を行う際に、制御装置２００（制御部２０１）は、ノズル移動機構１０を制御して、ノズル２を第１処理位置に移動させる。また、制御装置２００（制御部２０１）は、第１昇降部７を制御して、第１ガード部４１１、第２ガード部４２１及び第３液受け部４３を液受け位置に移動させる。液受け位置に配置された第１ガード部４１１の上端は、基板保持部５に保持されている基板Ｗよりも上方に位置する。この結果、基板Ｗから排出される第１ＳＰＭが第１ガード部４１１において受け止められる。なお、第１ガード部４１１、第２ガード部４２１及び第３液受け部４３を液受け位置に移動させることにより、第２ガード部４２１の上端は、第１ガード部４１１の上端よりも上方に配置され、第３液受け部４３（ガード部）の上端は、第２ガード部４２１の上端よりも上方に配置される。 6, when performing substrate processing using the first SPM, the control device 200 (control unit 201) controls the nozzle movement mechanism 10 to move the nozzle 2 to the first processing position. The control device 200 (control unit 201) also controls the first lifting unit 7 to move the first guard unit 411, the second guard unit 421, and the third liquid receiving unit 43 to the liquid receiving position. The upper end of the first guard unit 411 placed at the liquid receiving position is positioned above the substrate W held by the substrate holding unit 5. As a result, the first SPM discharged from the substrate W is received by the first guard unit 411. By moving the first guard unit 411, the second guard unit 421, and the third liquid receiving unit 43 to the liquid receiving position, the upper end of the second guard unit 421 is positioned above the upper end of the first guard unit 411, and the upper end of the third liquid receiving unit 43 (guard unit) is positioned above the upper end of the second guard unit 421.
　また、第１ＳＰＭによる基板処理を行う際に、制御装置２００（制御部２０１）は、硫酸と過酸化水素水との混合比が第１混合比となるように、図３～図５を参照して説明した第１流量調整弁１２４と第２流量調整弁１６５とを制御する。第１混合比は、例えば、３：１～５：１である。 When performing substrate processing using the first SPM, the control device 200 (control unit 201) controls the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 described with reference to Figures 3 to 5 so that the mixture ratio of sulfuric acid and hydrogen peroxide solution becomes a first mixture ratio. The first mixture ratio is, for example, 3:1 to 5:1.
　図７は、第２ＳＰＭによる基板処理を行う際の基板処理部１を示す図である。第２ＳＰＭによる基板処理は、第１ＳＰＭによる基板処理の後に行われる。図７に示すように、制御装置２００（制御部２０１）は、第１昇降部７を制御して、第１ガード部４１１を液受け位置から第１退避位置へ移動させ、第２ガード部４２１及び第３液受け部４３の位置を液受け位置に維持させる。この結果、第１ガード部４１１の上端は、基板保持部５に保持されている基板Ｗよりも下方に配置される。一方、第２ガード部４２１の上端は、基板保持部５に保持されている基板Ｗよりも上方に位置する。この結果、基板Ｗから排出される第２ＳＰＭが第２ガード部４２１において受け止められる。 FIG. 7 is a diagram showing the substrate processing unit 1 when substrate processing is performed by the second SPM. Substrate processing by the second SPM is performed after substrate processing by the first SPM. As shown in FIG. 7, the control device 200 (control unit 201) controls the first lifting unit 7 to move the first guard unit 411 from the liquid receiving position to the first retracted position, and maintains the positions of the second guard unit 421 and the third liquid receiving unit 43 at the liquid receiving positions. As a result, the upper end of the first guard unit 411 is positioned below the substrate W held by the substrate holding unit 5. On the other hand, the upper end of the second guard unit 421 is positioned above the substrate W held by the substrate holding unit 5. As a result, the second SPM discharged from the substrate W is received by the second guard unit 421.
　また、第２ＳＰＭによる基板処理を行う際に、制御装置２００（制御部２０１）は、硫酸と過酸化水素水との混合比が第２混合比となるように、図３～図５を参照して説明した第１流量調整弁１２４と第２流量調整弁１６５とを制御する。第２混合比は、第１混合比よりも大きい。したがって、第２ＳＰＭにおける硫酸の濃度は、第１ＳＰＭよりも大きい。第２混合比は、例えば、２０：１である。 Furthermore, when performing substrate processing using the second SPM, the control device 200 (control unit 201) controls the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 described with reference to Figures 3 to 5 so that the mixture ratio of sulfuric acid to hydrogen peroxide solution becomes the second mixture ratio. The second mixture ratio is greater than the first mixture ratio. Therefore, the concentration of sulfuric acid in the second SPM is greater than that in the first SPM. The second mixture ratio is, for example, 20:1.
　本実施形態によれば、硫酸の濃度が低いＳＰＭ（第１ＳＰＭ）を排液し、硫酸の濃度が高いＳＰＭ（第２ＳＰＭ）を回収することができる。したがって、第１貯留部１１１において硫酸の濃度が低下し難い。その結果、第１貯留部１１１の液交換処理（第１貯留薬液を硫酸の新液と交換する処理）の頻度を抑制することができ、ひいては、資源を節約することができる。 According to this embodiment, SPM with a low concentration of sulfuric acid (first SPM) can be discharged and SPM with a high concentration of sulfuric acid (second SPM) can be collected. Therefore, the concentration of sulfuric acid is less likely to decrease in the first storage section 111. As a result, the frequency of liquid exchange processing in the first storage section 111 (process of exchanging the first stored chemical liquid with fresh sulfuric acid liquid) can be reduced, which in turn can save resources.
　図８は、リンス液を基板Ｗに供給する際の基板処理部１を示す図である。リンス液による基板処理は、第２ＳＰＭによる基板処理の後に行われる。図８に示すように、リンス液を基板Ｗに供給する際に、制御装置２００（制御部２０１）は、第１昇降部７を制御して、第１ガード部４１１を第１退避位置から液受け位置へ移動させ、第２ガード部４２１及び第３液受け部４３の位置を液受け位置に維持させる。また、制御装置２００（制御部２０１）は、ノズル移動機構１０を制御して、ノズル２を第１処理位置から第２退避位置へ移動させる。更に、制御装置２００（制御部２０１）は、第２昇降部８を制御して、対向部材３を第３退避位置から第２処理位置へ移動させる。 FIG. 8 is a diagram showing the substrate processing unit 1 when supplying the rinsing liquid to the substrate W. The substrate processing with the rinsing liquid is performed after the substrate processing with the second SPM. As shown in FIG. 8, when supplying the rinsing liquid to the substrate W, the control device 200 (control unit 201) controls the first lifting unit 7 to move the first guard unit 411 from the first retracted position to the liquid receiving position, and maintains the positions of the second guard unit 421 and the third liquid receiving unit 43 at the liquid receiving position. The control device 200 (control unit 201) also controls the nozzle moving mechanism 10 to move the nozzle 2 from the first processing position to the second retracted position. Furthermore, the control device 200 (control unit 201) controls the second lifting unit 8 to move the opposing member 3 from the third retracted position to the second processing position.
　第２処理位置へ移動した対向部材３は、基板Ｗを上方から覆う。この結果、基板Ｗが対向部材３により上方から遮蔽される。また、液受け部４と対向部材３とにより基板Ｗが囲まれる。リンス液は、第２処理位置へ移動した対向部材３（ノズル３ａ）から基板Ｗの上面に向けて吐出される。 The opposing member 3 that has moved to the second processing position covers the substrate W from above. As a result, the substrate W is shielded from above by the opposing member 3. The substrate W is also surrounded by the liquid receiving portion 4 and the opposing member 3. The rinsing liquid is ejected from the opposing member 3 (nozzle 3a) that has moved to the second processing position toward the top surface of the substrate W.
　以上説明したように、本実施形態によれば、回収したＳＰＭ（第２ＳＰＭ）は、第１ＳＰＭにのみ用いられ、第２ＳＰＭには用いられない。したがって、回収したＳＰＭを第１ＳＰＭと第２ＳＰＭとの両者に用いる構成と比べて、基板処理後の基板Ｗの清浄度が低下し難くなる。 As described above, according to this embodiment, the recovered SPM (second SPM) is used only for the first SPM, and is not used for the second SPM. Therefore, compared to a configuration in which the recovered SPM is used for both the first SPM and the second SPM, the cleanliness of the substrate W after substrate processing is less likely to decrease.
　また、本実施形態によれば、第２ＳＰＭに硫酸の新液が用いられる。よって、基板処理後の基板Ｗの清浄度が更に低下し難くなる。更に、回収する第２ＳＰＭに硫酸の新液が用いられるため、第１ＳＰＭの清浄度が低下し難くなる。よって、基板処理後の基板Ｗの清浄度が更に低下し難くなる。 Furthermore, according to this embodiment, fresh sulfuric acid solution is used for the second SPM. Therefore, the cleanliness of the substrate W after the substrate processing is further prevented from deteriorating. Furthermore, because fresh sulfuric acid solution is used for the second SPM to be recovered, the cleanliness of the first SPM is further prevented from deteriorating. Therefore, the cleanliness of the substrate W after the substrate processing is further prevented from deteriorating.
　また、本実施形態によれば、回収した第２ＳＰＭは、第１ＳＰＭによる基板処理の際に排液される。したがって、第１ＳＰＭの清浄度が更に低下し難くなる。よって、基板処理後の基板Ｗの清浄度が更に低下し難くなる。 Furthermore, according to this embodiment, the collected second SPM is discharged during substrate processing by the first SPM. Therefore, the cleanliness of the first SPM is further prevented from decreasing. Therefore, the cleanliness of the substrate W after substrate processing is further prevented from decreasing.
　また、本実施形態によれば、レジスト膜の硬化層の除去に用いた第１ＳＰＭを回収せず、レジスト膜の残渣の除去に用いた第２ＳＰＭを回収するため、第１ＳＰＭの清浄度が更に低下し難くなる。よって、基板処理後の基板Ｗの清浄度が更に低下し難くなる。 In addition, according to this embodiment, the first SPM used to remove the hardened layer of the resist film is not recovered, and the second SPM used to remove the resist film residue is recovered, so the cleanliness of the first SPM is less likely to decrease. Therefore, the cleanliness of the substrate W after substrate processing is less likely to decrease.
　また、本実施形態によれば、第１貯留部１１１内の第１貯留薬液の清浄度が低下し難いため、第１貯留部１１１の液交換処理の頻度を抑えることができる。したがって、資源を節約することができる。 In addition, according to this embodiment, the cleanliness of the first stored medicinal liquid in the first storage section 111 is unlikely to decrease, so the frequency of liquid replacement processing in the first storage section 111 can be reduced. This makes it possible to conserve resources.
　なお、既に説明したように、第１貯留部１１１には、初期状態において硫酸の新液（濃度９６％又は９８％）が貯留されている。基板処理装置１００は、第１貯留部１１１に貯留されている硫酸の濃度が所定の範囲内（例えば、８９％以上９０％以下）で安定した後に、処理対象の基板Ｗの処理を開始してもよい。例えば、基板処理装置１００は、第１貯留部１１１に貯留されている硫酸の濃度が所定の範囲内で安定するまで、ダミー基板に対する基板処理を行ってもよい。 As already explained, in the initial state, the first storage section 111 stores fresh sulfuric acid (concentration 96% or 98%). The substrate processing apparatus 100 may start processing the substrate W to be processed after the concentration of the sulfuric acid stored in the first storage section 111 stabilizes within a predetermined range (e.g., 89% or more and 90% or less). For example, the substrate processing apparatus 100 may perform substrate processing on a dummy substrate until the concentration of the sulfuric acid stored in the first storage section 111 stabilizes within the predetermined range.
　以上、図面（図１～図８）を参照して本発明の実施形態について説明した。ただし、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施できる。また、上記の実施形態に開示される複数の構成要素は適宜改変可能である。例えば、ある実施形態に示される全構成要素のうちのある構成要素を別の実施形態の構成要素に追加してもよく、又は、ある実施形態に示される全構成要素のうちのいくつかの構成要素を実施形態から削除してもよい。 The above describes an embodiment of the present invention with reference to the drawings (Figs. 1 to 8). However, the present invention is not limited to the above embodiment, and can be implemented in various aspects without departing from the gist of the present invention. Furthermore, the multiple components disclosed in the above embodiment can be modified as appropriate. For example, a certain component among all the components shown in one embodiment may be added to a component of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.
　図面は、発明の理解を容易にするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚さ、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の構成は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能であることは言うまでもない。 The drawings are primarily schematic illustrations of each component to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.
　例えば、図１～図８を参照して説明した実施形態において、基板処理装置１００は、基板Ｗからレジスト膜を除去した。詳しくは、本実施形態の基板処理装置１００は、レジスト膜の硬化層の一部を基板Ｗから除去した後、レジスト膜の残渣物を基板Ｗから除去した。しかしながら、本発明に係る基板処理装置は、レジスト膜を除去する装置に限定されない。本発明が適用される基板処理装置は、同種の第１薬液と第２薬液とを基板に供給して基板を処理する装置である限り、特に限定されない。例えば、本発明は、ＣＭＰ処理後の基板から有機物を除去する装置に適用可能である。 For example, in the embodiment described with reference to Figures 1 to 8, the substrate processing apparatus 100 removed a resist film from the substrate W. More specifically, the substrate processing apparatus 100 of this embodiment removed a portion of the hardened layer of the resist film from the substrate W, and then removed the resist film residue from the substrate W. However, the substrate processing apparatus according to the present invention is not limited to an apparatus that removes a resist film. The substrate processing apparatus to which the present invention is applicable is not particularly limited as long as it is an apparatus that processes a substrate by supplying the same type of first and second chemical liquids to the substrate. For example, the present invention is applicable to an apparatus that removes organic matter from a substrate after CMP processing.
　また、図１～図８を参照して説明した実施形態では、硫酸と過酸化水素水との混合比を第１混合比とするために、第１流量調整弁１２４と第２流量調整弁１６５とが制御されたが、硫酸と過酸化水素水との混合比を第１混合比とするために、過酸化水素水の流量が制御されてもよい。同様に、硫酸と過酸化水素水との混合比を第２混合比とするために、過酸化水素水の流量が制御されてもよい。 In the embodiment described with reference to Figures 1 to 8, the first flow rate adjustment valve 124 and the second flow rate adjustment valve 165 are controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the first mixture ratio, but the flow rate of the hydrogen peroxide may be controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the first mixture ratio. Similarly, the flow rate of the hydrogen peroxide may be controlled to set the mixture ratio of sulfuric acid and hydrogen peroxide to the second mixture ratio.
　また、図１～図８を参照して説明した実施形態では、第１ＳＰＭによる基板処理時に、第１貯留薬液と第２貯留薬液との混合液（貯留混合液）がノズル２へ供給されたが、第１ＳＰＭによる基板処理時に、第１貯留薬液と第２貯留薬液とのうち、第１貯留薬液のみがノズル２へ供給されてもよい。具体的には、第１供給ラインＬ１とは別に、第１貯留薬液をノズル２まで流通させる供給ラインが設けられてもよい。この場合、第１貯留薬液をノズル２まで流通させる供給ラインには、第１貯留薬液を１７０℃で加熱する加熱部材が設けられる。 In the embodiment described with reference to Figures 1 to 8, a mixture (reserved mixture) of the first and second stored chemical liquids is supplied to the nozzle 2 during substrate processing by the first SPM, but of the first and second stored chemical liquids, only the first stored chemical liquid may be supplied to the nozzle 2 during substrate processing by the first SPM. Specifically, a supply line for circulating the first stored chemical liquid to the nozzle 2 may be provided in addition to the first supply line L1. In this case, a heating member for heating the first stored chemical liquid to 170°C is provided in the supply line for circulating the first stored chemical liquid to the nozzle 2.
　また、図１～図８を参照して説明した実施形態では、ノズル２から第１ＳＰＭと第２ＳＰＭとが排他的に吐出されたが、第１ＳＰＭと第２ＳＰＭとは、異なるノズルから吐出されてもよい。 In the embodiment described with reference to Figures 1 to 8, the first SPM and the second SPM are ejected exclusively from nozzle 2, but the first SPM and the second SPM may be ejected from different nozzles.
　また、図１～図８を参照して説明した実施形態において、基板保持部５は挟持式のチャックであったが、基板保持部５は挟持式のチャックに限定されない。例えば、基板保持部５は、バキューム式のチャックであってもよい。 In the embodiment described with reference to Figures 1 to 8, the substrate holding unit 5 is a clamping chuck, but the substrate holding unit 5 is not limited to a clamping chuck. For example, the substrate holding unit 5 may be a vacuum chuck.
　本発明は、基板を処理する装置に有用であり、産業上の利用可能性を有する。 The present invention is useful for substrate processing devices and has industrial applicability.
１　　　：基板処理部
２　　　：ノズル
４　　　：液受け部
２１　　：排液配管
３０　　：回収部
３１　　：第１回収配管
３２　　：回収タンク
３３　　：第２回収配管
３４　　：回収ポンプ
４１　　：第１液受け部
４２　　：第２液受け部
１００　：基板処理装置
１０１　：第１薬液キャビネット
１０３　：第２薬液キャビネット
１０５　：流体ボックス
１１０　：第１循環部
１１１　：第１貯留部
１１２　：第１循環配管
１２０　：第１供給部
１２１　：第１供給配管
１２２　：第１戻り配管
１２３　：第１流量計
１２４　：第１流量調整弁
１２５　：第１供給開閉弁
１２６　：第１戻り開閉弁
１５０　：第２循環部
１５１　：第２貯留部
１５２　：第２循環配管
１５３　：第２加熱部材
１５４　：第２循環ポンプ
１６０　：第２供給部
１６１　：第２供給配管
１６２　：第２戻り配管
１６３　：第３加熱部材
１６４　：第２流量計
１６５　：第２流量調整弁
１６６　：第２供給開閉弁
１６７　：第２戻り開閉弁
２００　：制御装置
２０１　：制御部
２０２　：記憶部
４１１　：第１ガード部
４１２　：第１カップ部
４２１　：第２ガード部
４２２　：第２カップ部
Ｌ１　　：第１供給ライン
Ｌ２　　：排液ライン
Ｌ３　　：回収ライン
Ｗ　　　：基板 1: Substrate processing unit 2: Nozzle 4: Liquid receiving unit 21: Drainage pipe 30: Recovery unit 31: First recovery pipe 32: Recovery tank 33: Second recovery pipe 34: Recovery pump 41: First liquid receiving unit 42: Second liquid receiving unit 100: Substrate processing unit 101: First chemical liquid cabinet 103: Second chemical liquid cabinet 105: Fluid box 110: First circulation unit 111: First storage unit 112: First circulation pipe 120: First supply unit 121: First supply pipe 122: First return pipe 123: First flow meter 124: First flow rate adjustment valve 125: First supply opening/closing valve 126: First return opening/closing valve 150: Second circulation unit 151: Second storage unit 152: Second circulation pipe 153: Second heating member 154 : Second circulation pump 160 : Second supply section 161 : Second supply pipe 162 : Second return pipe 163 : Third heating member 164 : Second flow meter 165 : Second flow rate adjustment valve 166 : Second supply on-off valve 167 : Second return on-off valve 200 : Control device 201 : Control section 202 : Memory section 411 : First guard section 412 : First cup section 421 : Second guard section 422 : Second cup section L1 : First supply line L2 : Drain line L3 : Recovery line W : Substrate

Claims (6)

  1. 　基板に向けて第１薬液と第２薬液とを排他的に吐出して前記基板を処理するノズルと、
    　前記ノズルから吐出される薬液を前記第１薬液と前記第２薬液との間で切り替える切替部と、
    　前記切替部を制御する制御部と、
    　前記基板から排出される前記第１薬液を受け止める第１液受け部と、前記基板から排出される前記第２薬液を受け止める第２液受け部とを含む液受け部と、
    　前記第１液受け部から前記第１薬液が流入する排液ラインと、
    　前記第２液受け部から前記第２薬液が流入する回収ラインと、
    　前記第１薬液に含まれる第３薬液を貯留する第１貯留部と、
    　前記第２薬液に含まれる第４薬液を貯留する第２貯留部と
    　を備え、
    　前記第１薬液と前記第２薬液とは同種の薬液であり、
    　前記回収ラインは、前記第２薬液を前記第１貯留部へ導く、基板処理装置。     a nozzle that exclusively discharges a first chemical liquid and a second chemical liquid toward a substrate to treat the substrate;
    a switching unit that switches the chemical liquid discharged from the nozzle between the first chemical liquid and the second chemical liquid;
    A control unit that controls the switching unit;
    a liquid receiving portion including a first liquid receiving portion that receives the first chemical liquid discharged from the substrate and a second liquid receiving portion that receives the second chemical liquid discharged from the substrate;
    a drainage line into which the first chemical liquid flows from the first liquid receiving portion;
    a recovery line into which the second chemical liquid flows from the second liquid receiving portion;
    A first reservoir that stores a third chemical liquid contained in the first chemical liquid;
    a second reservoir configured to store a fourth chemical liquid contained in the second chemical liquid;
    The first chemical liquid and the second chemical liquid are the same type of chemical liquid,
    The recovery line guides the second chemical liquid to the first reservoir.
  2. 　前記第３薬液を前記第１貯留部を介して循環させる第１循環部と、
    　前記第４薬液を前記第２貯留部を介して循環させる第２循環部と、
    　前記第１循環部を循環する前記第３薬液が流入し、前記第２循環部を循環する前記第４薬液が流入する薬液供給ラインと
    　を更に備え、
    　前記切替部は、前記薬液供給ラインへの前記第３薬液の流入と前記流入の停止とを切り替える、請求項１に記載の基板処理装置。     A first circulation unit that circulates the third chemical solution through the first storage unit;
    A second circulation unit that circulates the fourth chemical solution through the second storage unit;
    a chemical supply line into which the third chemical liquid circulating through the first circulation unit flows and into which the fourth chemical liquid circulating through the second circulation unit flows,
    The substrate processing apparatus according to claim 1 , wherein the switching unit switches between flowing the third chemical liquid into the chemical liquid supply line and stopping the flow.
  3. 　前記第１薬液による基板処理は、前記基板から除去対象物を除去する処理であり、
    　前記第２薬液による基板処理は、前記基板から前記除去対象物の残渣物を除去する処理である、請求項１又は請求項２に記載の基板処理装置。     the substrate treatment with the first chemical liquid is a treatment for removing a removal target from the substrate,
    3 . The substrate processing apparatus according to claim 1 , wherein the substrate processing with the second chemical liquid is processing for removing a residue of the object to be removed from the substrate.
  4. 　前記第１薬液及び前記第２薬液は、硫酸と過酸化水素水との混合液である、請求項３に記載の基板処理装置。 The substrate processing apparatus according to claim 3, wherein the first chemical liquid and the second chemical liquid are a mixture of sulfuric acid and hydrogen peroxide.
  5. 　前記第４薬液は、前記硫酸の新液である、請求項４に記載の基板処理装置。 The substrate processing apparatus according to claim 4, wherein the fourth chemical solution is a fresh solution of the sulfuric acid.
  6. 　前記第１貯留部は、初期状態において前記硫酸を貯留し、前記回収ラインにより前記第２薬液が回収されることで、前記硫酸と前記過酸化水素水との混合液を貯留する、請求項４に記載の基板処理装置。 The substrate processing apparatus of claim 4, wherein the first storage unit stores the sulfuric acid in an initial state, and stores a mixture of the sulfuric acid and the hydrogen peroxide solution by recovering the second chemical solution through the recovery line.
PCT/JP2023/036335 2022-10-06 2023-10-05 Substrate treatment device WO2024075808A1 (en)

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JP2022161763A JP2024055115A (en) 2022-10-06 Substrate Processing Equipment
JP2022-161763 2022-10-06

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WO2024075808A1 true WO2024075808A1 (en) 2024-04-11

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