CN1971569A - An improved simulation model of high-voltage device and its application method - Google Patents
An improved simulation model of high-voltage device and its application method Download PDFInfo
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- CN1971569A CN1971569A CN 200510110601 CN200510110601A CN1971569A CN 1971569 A CN1971569 A CN 1971569A CN 200510110601 CN200510110601 CN 200510110601 CN 200510110601 A CN200510110601 A CN 200510110601A CN 1971569 A CN1971569 A CN 1971569A
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Abstract
The invention discloses an improved simulation model of high voltage component, a variable resistance which changes according to the voltage and temperature, is cascaded on the transistor drain base on the common SPICE component model under low pressure to realize the gate voltage of high-pressure area to control weaken effect of transistor current capability, and increase the separated effect of current controlling current source simulation high voltage component; the resistance possesses the function relationship with the voltage put on the resistance; the transistor drain connects with the source pole by the current control current source to stimulate the ionization effect of high-voltage transistor. In the invention the BSIM3 model and said improved simulation model of high voltage component are combined to form the high voltage component SPICE model, and then calls the parameters to fit the actually detected value: the resistance R0, the coefficients of voltage VC1,VC2,VC3,VC4,and the coefficients of temperature TC1, TC2 and so on. The invention can improve the convenience to use the high voltage model, improve the working efficiency and accuracy of designing integrated circuit, reduce the design cycle and cut back cost.
Description
Technical field
The present invention relates to a kind of circuit design analog simulation model and software, particularly a kind of improved simulation model of high-voltage device and application process thereof.
Background technology
At present, the device simulation model has in integrated circuit (IC) design in important effect, and it can shorten the design production cycle of product, the yield rate that improves product, saving cost or the like greatly.High tension apparatus obtains application more and more widely in integrated circuit (IC) products simultaneously, as LCD driver (LCD Driver) etc., but owing to lack efficient, succinct high tension apparatus model, more not generally acknowledged unified standard, on normal transistor, be used widely, traditional BSIM3 (Berkeleyshort channel insulated gate field effect transistor model) model is the performance of emulation high tension apparatus well, the performance under its high pressure particularly, this design to high voltage integrated circuit has caused inconvenience and heavy losses very.Therefore, the requirement to accurate, efficient device model just becomes very urgent in the high voltage integrated circuit design.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of improved simulation model of high-voltage device and application process thereof, can directly extract corresponding to semiconductor devices at the model aspect the high pressure, and can equally with common device model directly be called by circuit design simulation software.
For solving the problems of the technologies described above, the present invention proposes a kind of improved simulation model of high-voltage device, on the common SPICE device model basis under the low pressure condition, one of series connection can be with the variable resistor of voltage, temperature variation on transistor drain, to realize that control weakens effect to the high-pressure area grid voltage to the transistor current ability, increase a CCCS emulation high tension apparatus from effect; This resistance resistance value with the pass that is added in this voltage above resistance is:
R=RO* (1+VC1*VR+VC2*VR*VR) * (1+VC3*Vbs+VC4*Vbs*Vbs), wherein RO is the resistance value of voltage when being zero, VC1, VC2, VC3, VC4 are its voltage one-level and secondary coefficient, and VR is an absolute value of voltage, and Vbs is the absolute value of voltage between substrate and source electrode; CCCS of cross-over connection between transistor drain and source electrode is with the ionization effect of emulation high voltage transistor.
The present invention also proposes a kind of improved simulation model of high-voltage device application process, BSIM3 model and above-mentioned improved simulation model of high-voltage device are combined into high tension apparatus SPICE model, call the parameter of regulating: resistance R O then for the match actual measured value, its voltage coefficient VC1, VC2, VC3, VC4, temperature coefficient TC1, TC2; Its electronic circuit is: .subckt nch_hv drain gate source sub wn=50uln=2u; X2 drain dl Resistance model for prediction or electronic circuit name; Ml dl gate source sub transistor model name w=wn l=ln; .ends.
Use device model slip-stick artist of the present invention and on the data basis of the high voltage transistor of measuring, can directly extract corresponding high pressure model, and can be by circuit design simulation software (as SPICE, be Simulation Program with Integrated Circuit Emphasis) directly call, greatly improved convenience that the high pressure model uses, improved the efficient and the accuracy of integrated circuit (IC) design work greatly, shortened product design cycle and reduce cost.
Description of drawings
Fig. 1 is high-pressure crystal tube current and the voltage performance with ionization phenomenon;
Fig. 2 is the improved transistor schematic of the present invention;
Fig. 3 is the high voltage transistor current/voltage performance that model simulated after the present invention improves.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and the specific embodiments.
The performance difference of high-pressure crystal tube device and normal transistor device mainly shows, when drain electrode works in saturation voltage (Vdd), increase with grid voltage (Vgs), when Vgs approaches Vdd, transistorized electric current (Ids) increase obviously becomes slowly, promptly at higher-pressure region grid voltage Vgs the control ability of electric current I ds is weakened greatly.In addition, high voltage transistor also is easy to generate the ionization phenomenon that is associated with grid voltage, promptly is high-pressure crystal tube current and the voltage performance signal with ionization phenomenon as Fig. 1.
Yet traditional BSIM3 can not well simulate this grid voltage the transistor current control is weakened weak effect and the ionization phenomenon that is associated with grid voltage in the higher-pressure region.The present invention is promptly on the basis of traditional B SIM3 universal model, make appropriate change by parameter, form and call method thereof etc. to device model, found a kind of method of direct realization high pressure model, and, can make simulation result and test data basically identical by regulating the value of suitable parameter.Specific as follows:
The present invention at first sets up a kind of improved simulation model of high-voltage device.
1, sets up the common SPICE device model of high voltage transistor under the low pressure condition.
2, increase a variable resistor on transistor drain, utilize the dividing potential drop effect of drain resistance, control weakens effect to the transistor current ability to be implemented in the high-pressure area grid voltage, and the pass of its resistance and its voltage is:
R＝RO*(1+VC1*VR+VC2*VR*VR)*(1+VC3*Vbs+VC4*Vbs*Vbs)
Wherein RO is the resistance value of voltage when being zero, and VC1, VC2, VC3, VC4 are its voltage one-level and secondary coefficients, and VR is the absolute value of voltage that is added in above the resistance, and Vbs is the absolute value of voltage between substrate and source electrode.
3, increase the ionization phenomenon that with grid voltage be associated of a CCCS (CCCS) with the emulation high voltage transistor.Increase a CCCS emulation high tension apparatus from effect.
As shown in Figure 2, be the improved transistor schematic of the present invention for the high tension apparatus equivalent electrical circuit after improving.
Below be a high tension apparatus model specific embodiment of setting up as stated above:
.lib?tt_hv
.lib ' ./model_hv.lib ' transistor library name
.lib ' ./model_hv.lib ' resistance library name
.subckt?nch_hv?drain?gate?source?sub?wn＝50u?ln＝2u
X2 drain dl Resistance model for prediction or electronic circuit name
Ml dl gate source sub transistor model name w=wn l=ln
.ends
.endl?tt-hv
*****************************
.LIB transistor library name
.MODEL transistor model name NMOS
+LEVEL＝53
.ENDL transistor library name
*******************************
.LIB resistance library name
.subckt electronic circuit name n1 n2
.param?r0＝100?vc1＝2.66E-1?vc2＝le-2
.ends electronic circuit name
.ENDL resistance library name
BSIM3 model and the improved simulation model of high-voltage device of the invention described above can be combined into high tension apparatus SPICE model then, on the basis of actual high-voltage transistor characteristic data, by partial parameters to wherein regulating for the match actual measured value, as resistance R O, voltage coefficient VC1, VC2, VC3, VC4, temperature coefficient TC1, TC2 etc. are optimized, utilize the dividing potential drop effect of drain resistance, and the incremental effect of CCCS, can be implemented in the behavioural characteristic that realizes high tension apparatus on the traditional B SIM3 model based, and obtain fitting effect preferably.
Its electronic circuit is:
.subckt?nch_hv?drain?gate?source?sub?wn＝50u?ln＝2u
X2 drain d1 Resistance model for prediction or electronic circuit name
Ml dl gate source sub transistor model name w=wn l=ln
.ends
Electronic circuit is a kind of net sheet form when making circuit simulation with software, is similar to the subroutine in the program design, can be called as way circuit or other electronic circuit by other circuit.
In sum, use simulation model of high-voltage device and application process that the present invention sets up, the device model slip-stick artist can directly extract corresponding high pressure model on the data basis of the high voltage transistor of measuring, and can be by circuit design simulation software (as high pressure SPICE-HSPICE, SPECTRE) directly call, greatly improved convenience that the high pressure model uses, improved the efficient and the accuracy of integrated circuit (IC) design work greatly, dwindled the product design cycle and reduce cost.
Claims (2)
1, a kind of improved simulation model of high-voltage device is at first set up the common SPICE device model of high voltage transistor under the low pressure condition, it is characterized in that,
One of series connection can be with the variable resistor of voltage, temperature variation on described transistor drain then, to realize that control weaken effect to the high-pressure area grid voltage to the transistor current ability, increase a CCCS emulation high tension apparatus from effect; This resistance resistance value with the pass that is added in this voltage above resistance is:
R＝RO*(1+VC1*VR+VC2*VR*VR)*(1+VC3*Vbs+VC4*Vbs*Vbs)，
Wherein RO is the resistance value of voltage when being zero, and VC1, VC2, VC3, VC4 are its voltage one-level and secondary coefficient, and VR is an absolute value of voltage, and Vbs is the absolute value of voltage between substrate and source electrode;
CCCS of cross-over connection between described transistor drain and source electrode is with the ionization effect of emulation high voltage transistor.
2, a kind of improved simulation model of high-voltage device application process, it is characterized in that, BSIM3 model and the described improved simulation model of high-voltage device of claim 1 are combined into high tension apparatus SPICE model, this model can call the parameter of regulating for the match actual measured value: resistance R O, its voltage coefficient VC1, VC2, VC3, VC4, temperature coefficient TC1, TC2; Its electronic circuit is:
.subckt?nch_hv?drain?gate?source?sub?wn＝50u?ln＝2u
X2 drain d1 Resistance model for prediction or electronic circuit name
Ml d1 gat e source sub transistor model name w=wn l=ln
.ends。
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| CN100474315C CN100474315C (en) | 2009-04-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101674071B (en) * | 2008-09-11 | 2011-08-24 | 上海华虹Nec电子有限公司 | Physical layer interface circuit |
| CN101593224B (en) * | 2008-05-29 | 2011-10-05 | 中芯国际集成电路制造(北京)有限公司 | MOS transistor noise model formation method, device and circuit simulation method |
| CN104750897A (en) * | 2013-12-31 | 2015-07-01 | 上海华虹宏力半导体制造有限公司 | Sampling tube equivalent circuit and simulation method thereof |
| CN105095537A (en) * | 2014-05-08 | 2015-11-25 | 无锡华润上华半导体有限公司 | Simulation model of high voltage device and modeling method for simulation model of high voltage device |
| CN110750944A (en) * | 2019-10-25 | 2020-02-04 | 上海华虹宏力半导体制造有限公司 | Simulation method and device and readable storage medium |
| CN114330228A (en) * | 2022-03-10 | 2022-04-12 | 晶芯成(北京)科技有限公司 | High-voltage transistor simulation model and modeling method |
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2005
- 2005-11-22 CN CNB2005101106019A patent/CN100474315C/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101593224B (en) * | 2008-05-29 | 2011-10-05 | 中芯国际集成电路制造(北京)有限公司 | MOS transistor noise model formation method, device and circuit simulation method |
| CN101674071B (en) * | 2008-09-11 | 2011-08-24 | 上海华虹Nec电子有限公司 | Physical layer interface circuit |
| CN104750897A (en) * | 2013-12-31 | 2015-07-01 | 上海华虹宏力半导体制造有限公司 | Sampling tube equivalent circuit and simulation method thereof |
| CN104750897B (en) * | 2013-12-31 | 2017-10-20 | 上海华虹宏力半导体制造有限公司 | Sampling pipe equivalent circuit and emulation mode |
| CN105095537A (en) * | 2014-05-08 | 2015-11-25 | 无锡华润上华半导体有限公司 | Simulation model of high voltage device and modeling method for simulation model of high voltage device |
| US20170011144A1 (en) * | 2014-05-08 | 2017-01-12 | Csmc Technologies Fab1 Co., Ltd. | High-voltage device simulation model and modeling method therefor |
| CN105095537B (en) * | 2014-05-08 | 2018-03-23 | 无锡华润上华科技有限公司 | The simulation model of high tension apparatus and the modeling method of simulation model of high-voltage device |
| CN110750944A (en) * | 2019-10-25 | 2020-02-04 | 上海华虹宏力半导体制造有限公司 | Simulation method and device and readable storage medium |
| CN110750944B (en) * | 2019-10-25 | 2023-06-02 | 上海华虹宏力半导体制造有限公司 | Simulation method and device and readable storage medium |
| CN114330228A (en) * | 2022-03-10 | 2022-04-12 | 晶芯成(北京)科技有限公司 | High-voltage transistor simulation model and modeling method |
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| CN100474315C (en) | 2009-04-01 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |