CN104750897B - Sampling pipe equivalent circuit and emulation mode - Google Patents
Sampling pipe equivalent circuit and emulation mode Download PDFInfo
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- CN104750897B CN104750897B CN201310750951.6A CN201310750951A CN104750897B CN 104750897 B CN104750897 B CN 104750897B CN 201310750951 A CN201310750951 A CN 201310750951A CN 104750897 B CN104750897 B CN 104750897B
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Abstract
The invention discloses a kind of sampling pipe equivalent circuit, include first and second two high voltage field effect transistor, one VCVS, the gate connected in parallel of first and second high voltage field effect transistor is drawn, the positive pole of VCVS connects the drain electrode of the second high pressure FET, drawn after its negative pole is in parallel with the drain electrode of the first high pressure FET, the source electrode of first high voltage field effect transistor leads to the first source electrode, the source electrode of second high voltage field effect transistor leads to the second source electrode, and the body end of two high voltage field effect transistors is drawn to be connected with the first source electrode.The invention also discloses the emulation mode of the sampling pipe equivalent circuit, it is more accurate, true that it emulates data.
Description
Technical field
The present invention relates to semiconductor integrated circuit design field, a kind of sampling pipe equivalent circuit is particularly related to, the present invention is also
It is related to the emulation mode of sampling pipe equivalent circuit.
Background technology
Sampling pipe is a kind of circuit arrangement that can be used in Analog Circuit Design, and its principle is to utilize two kinds of different sizes
The current ratio of device, different current ratios (samplings is obtained by changing the source voltage biasing of one of device
Than), the device size of sampling pipe is general all than larger, therefore is sampled in circuit application than being metastable.It is right in theory
The model description of sampling pipe, it is only necessary to which model description is individually carried out to two devices by BSIM models, but this is
Premised on the complete separate hypothesis of two devices in sampling pipe.In some actual sampling tubular constructions, two devices
Inversion channel can share same trap, if the source electrode of one of device has voltage bias, sampling pipe in this case
Just no longer it is completely independent from each other between two devices, the channel charge in trap can interact, actually measures obtained electric current
Voltage curve and sample it is more unsuitable than described with a BSIM model, and needs by the further optimization to model come
Reach and improve purpose of the sampling than precision.
If Fig. 1 is to be divided to or so two high voltage field effect transistors, this two devices in existing sampling pipe equivalent circuit, circuit
The process structure of part is identical, and channel length is also identical, only difference is that left side high voltage field effect transistor LDMOS
Channel width be the right device hundred times.The drain D RAIN of two devices connects altogether, and grid G ATE also connects extraction altogether.Left side
The source S 1 and body end of large-size device draw ground connection, and the source electrode of right side small size device can add controllable voltage to load, by adjusting
The voltage of section source S 2 flows through the electric current of small size device to change, so as to change the electric current ratio of two devices in left and right, reaches and changes
Variable sampling than purpose.Two devices in left and right are respectively adopted BSIM models that industry generally uses to describe in circuit.Before
Model is set up on the basis of being completely independent from each other based on two pipes, when sampling pipe uses more special domain structure
When, as shown in Fig. 2 the sampling pipe of small size is included in large-sized sampling pipe, the p-well of large scale and small size device is common
With not separating, it is assumed that the source ground of large scale pipe, there is a less fixed voltage biasing in the source electrode of small-sized tube,
If also lifting is slightly above source voltage to drain voltage now, small size device may not necessarily be turned on, and reason is that shared p-well makes
Obtaining in device has Partial charge to flow in neighbouring large-size device raceway groove, therefore the conducting voltage added needed for drain voltage
Can be bigger than source voltage many.As shown in Fig. 3 and Fig. 4 test data, Fig. 3 is the source electrode electricity that the test of small size sampling pipe is obtained
Flow the graph of a relation with drain voltage.Drain voltage is scanned, test obtains source current, and source voltage is now 0V, and Fig. 4 is small chi
Graph of a relation of the source current that very little sampling pipe test is obtained with drain voltage.Drain voltage is scanned, test obtains source current, source
Pole tension is now 1V, and grid voltage adds 1~6V electrical voltage points respectively.Fig. 3 and Fig. 4 dotted lines are actually to measure obtained data,
Solid line is the data that BSIM model Straight simulations are obtained.When source electrode has 1V biasings, drain voltage will rise to 4V or so
Begin to turn on, and the simulation curve of BSIM models description just has begun to conducting since 1V, can be with without any model parameter
So that simulation curve moves to the right 4V.Therefore the sub-circuit structure in the simulation model is required further improvement.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of equivalent circuit of sampling pipe, and it is another that the present invention also to be solved
One technical problem is to provide the emulation mode of the sampling pipe equivalent circuit so that sampling pipe can have the sampling ratio of higher precision.
To solve the above problems, the equivalent circuit of sampling pipe of the present invention, includes first and second high pressure field-effect
Transistor a, VCVS, the gate connected in parallel of first, second high voltage field effect transistor draws to form sampling pipe
The grid of equivalent circuit；
The positive pole of the VCVS connects the drain electrode of the second high voltage field effect transistor, its negative pole and the first high pressure
The drain electrode of field-effect transistor is connected and drawn, and forms the drain electrode of sampling pipe equivalent circuit；
The first high voltage field effect transistor is connected after the body end of first and second high voltage field effect transistor is in parallel
Source electrode；
The source electrode of first high voltage field effect transistor leads to the first source electrode, second high voltage field effect transistor
Source electrode lead to the second source electrode.
Further, first and second described high voltage field effect transistor picks up from standard BSIM models, the first high pressure
The channel width of field-effect transistor is 300~800 times of the second high voltage field effect transistor.
Further, described VCVS, by the first high voltage field effect transistor drain voltage and grid electricity
The control of pressure, it is exported compensates to the drain voltage of the second high pressure FET.
The emulation mode of sampling pipe equivalent circuit of the present invention, is comprised the following steps：
The first step, builds sampling pipe equivalent circuit；
Second step, is emulated according to the sampling pipe equivalent circuit of structure.
Further, in the first step, sampling pipe equivalent circuit includes first and second high voltage field effect transistor, one
VCVS, the gate connected in parallel of first, second high voltage field effect transistor draws to form sampling pipe equivalent circuit
Grid；
The positive pole of the VCVS connects the drain electrode of the second high voltage field effect transistor, its negative pole and the first high pressure
The drain electrode of field-effect transistor is connected and drawn, and forms the drain electrode of sampling pipe equivalent circuit；
The first high voltage field effect transistor is connected after the body end of first and second high voltage field effect transistor is in parallel
Source electrode；
The source electrode of first high voltage field effect transistor leads to the first source electrode, second high voltage field effect transistor
Source electrode lead to the second source electrode.
Further, first and second described high voltage field effect transistor picks up from standard BSIM models, the first high pressure
The channel width of field-effect transistor is 300~800 times of the second high voltage field effect transistor.
Further, described VCVS, by the first high voltage field effect transistor drain voltage and grid electricity
The control of pressure, it is exported compensates to the drain voltage of the second high pressure FET.
Further, during emulation, the compensation output voltage V=k*Vs of VCVS；
Vs is the voltage of the second source electrode, and k is coefficient；
Using SPICE language and above-mentioned formula, it is defined as follows to VCVS：
ex1<Drain port 1><Drain port 2>poly(1)<Second source electrode port>0 0pp1
PP1 is, based on the extra fitting parameter beyond BSIM, to be equal to coefficient k above, and poly (1) is emulator language
Speech, represents 1 rank linear representation, PP1 is linear coefficient；
Voltage difference between second source electrode and ground connection is added line by drain and gate voltage linear relational expression
Property coefficient PP1 is as new additional model parameters, PP1 parameter extracting steps：
A) test obtains the Is-Vd curve datas of the second high voltage field effect transistor first, is then carried using BSIM models
It is the i-v curve parameter under the conditions of 0V to take the second source voltage；
B) obtained Is-Vd curve datas are tested in the case where the second source voltage is 1V and other voltages；
C) using the equivalent circuit built, first and second high voltage field effect transistor is all described with standard BSIM models,
PP1 parameters are adjusted in emulator so that emulation data are fitted with measured data, obtain PP1 parameters during optimal simulation curve
It can extract and obtain.
Sampling pipe equivalent circuit of the present invention and emulation mode, the sampling pipe circuit structure described in existing BSIM
On the basis of be improved, it is contemplated that electric charge is shunted, the method for employing artificial compensation, in the drain electrode of device, and series connection adds one
Individual VCVS, due to voltage source, internal resistance is 0 in emulator, will not increase extra load to device, sampling ratio
Precision is significantly improved.
Brief description of the drawings
Fig. 1 is existing sampling pipe equivalent circuit diagram.
Fig. 2 is sampling pipe domain structure.
Fig. 3~4 are the graphs of a relation of the source current that the test of small size sampling pipe is obtained and drain voltage.
Fig. 5 is sampling pipe equivalent circuit diagram of the present invention.
Fig. 6 is the graph of a relation of the source current that small size sampling pipe test of the present invention is obtained and drain voltage.
Fig. 7 is that simulated effect figure is compared in existing sampling pipe sampling.
Fig. 8 is that simulated effect figure is compared in sampling pipe sampling of the present invention.
Fig. 9 is sampling pipe simulation contact surface of the present invention.
Embodiment
The equivalent circuit of sampling pipe of the present invention, as shown in figure 5, including first and second high pressure field effect transistor
Pipe a, VCVS, the gate connected in parallel of first, second high voltage field effect transistor draws that to form sampling pipe equivalent
The grid of circuit；
The positive pole of the VCVS connects the second high voltage field effect transistor, and (sampling pipe on right side, is small in figure
Size sampling pipe) drain electrode, (LDMOS in left side, is large scale sampling in figure for its negative pole and the first high voltage field effect transistor
Pipe) drain electrode connect and draws, formation sampling pipe equivalent circuit drain electrode；
The first high voltage field effect transistor is connected after the body end of first and second high voltage field effect transistor is in parallel
Source electrode；
The source electrode of first high voltage field effect transistor leads to the first source electrode, second high voltage field effect transistor
Source electrode lead to the second source electrode.
First and second described high voltage field effect transistor picks up from standard BSIM models, the first high pressure field effect transistor
The channel width of pipe is the hundred times of the second high voltage field effect transistor.
Described VCVS, is controlled by the first high voltage field effect transistor drain voltage and grid voltage,
It is exported compensates to the drain voltage of the second high pressure FET.
Above-described equivalent circuit is improved on the basis of the sampling pipe circuit structure that existing BSIM is described, it is considered to
To electric charge shunting, it is meant that small size sampling pipe will add the voltage of higher than source voltage just to make proper device operation, specifically
The charge number of shunting how much is depended on greatly, but this is difficult that calculating is obtained in the devices.Physically set up formula and inconvenient,
After make it that drain voltage is raised by the method for voltage compensation so which part voltage has loss, eventually falls at raceway groove
Voltage will be far smaller than drain voltage, and fall the voltage at raceway groove and can change with drain voltage change.The present invention is adopted
With the method for artificial compensation, in the drain electrode of device, series connection adds a VCVS, because voltage source is in emulation
Internal resistance is 0 in device, will not increase extra load to device, while it can subtract the actual effective voltage being added on raceway groove of drain electrode
It is weak, it is meant that what drain voltage to be added, which more increases, can just make device work.
The emulation mode of sampling pipe equivalent circuit of the present invention, is comprised the following steps：
The first step, builds sampling pipe equivalent circuit；
Second step, is emulated according to the sampling pipe equivalent circuit of structure.
During emulation, the compensation output voltage V=k*Vs of VCVS；
Vs is the voltage of the second source electrode, and k is coefficient；
Using SPICE language and above-mentioned formula, it is defined as follows to VCVS：
ex1<Drain port 1><Drain port 2>poly(1)<Second source electrode port>0 0pp1
PP1 is, based on the extra fitting parameter beyond BSIM, to be equal to coefficient k, and poly (1) is emulator language, represents 1
Rank linear representation, PP1 is linear coefficient；
Voltage difference between second source electrode and ground connection is added line by drain and gate voltage linear relational expression
Property coefficient PP1 is as new additional model parameters, PP1 parameter extracting steps：
A) test obtains the Is-Vd curve datas of the second high voltage field effect transistor first, as shown in figure 3, then utilizing
The source voltage of BSIM model extractions second is the i-v curve parameter under the conditions of 0V；
B) test obtains the second high voltage field effect transistor source voltage to test obtained Is- under 1V and other voltages
Vd curve datas, as shown in Figure 4；
C) using the equivalent circuit of structure as shown in Figure 5, first and second high voltage field effect transistor all uses standard
BSIM models are described, and PP1 parameters are adjusted in emulator so that emulation data are fitted with measured data, obtain as shown in Figure 6
Graph of a relation, PP1 parameters when obtaining optimal simulation curve, which can extract, to be obtained.
The numerical value for obtaining PP1 is fitted by surveying Is-Vd data and sampling to be compared with model emulation result than data,
So as to obtain the sampling pipe sub-circuit model of degree of precision.As shown in fig. 6, after regulation PP1 coefficients, simulation curve success is to the right
Translation, unlatching quiescent potential is reached after 4V.
Fig. 7 and Fig. 8 are the further checkings to the equivalent circuit, by the second source electrode (port in Fig. 5 of equivalent circuit
S2) with the ohmic load for different resistances of being connected respectively between ground, after drain voltage lifting, source electrode is because there is electricity in series resistance
Pressure meeting gradually lifting, flows through the current ratio of the first source S 1 and the second source S 2 and compares for sampling, and different resistances can be corresponded to not
Same sampling ratio.Fig. 7 is that same simulation comparison figure is compared in the sampling obtained before improving without sub-circuit, and Fig. 8 is after sub-circuit improves
Same simulation comparison figure is compared in obtained sampling, and M ratio are actual measurement sampling ratio, and S ratio are emulation sampling ratio, it can be found that sampling
The precision of ratio is obviously improved after equivalent circuit improves.
The preferred embodiments of the present invention are these are only, are not intended to limit the present invention.Come for those skilled in the art
Say, the present invention there can be various modifications and variations.Within the spirit and principles of the invention, it is any modification for being made, equivalent
Replace, improve etc., it should be included in the scope of the protection.
Claims (7)
1. a kind of sampling pipe equivalent circuit, it is characterised in that：Include first and second high voltage field effect transistor, voltage control
Voltage source, the gate connected in parallel of first, second high voltage field effect transistor draws the grid to form sampling pipe equivalent circuit；
The positive pole of the VCVS connects the drain electrode of the second high voltage field effect transistor, and its negative pole and the first high-voltage field are imitated
Answer the drain electrode of transistor to connect and draw, form the drain electrode of sampling pipe equivalent circuit；
The source electrode of the first high voltage field effect transistor is connected after the body end of first and second high voltage field effect transistor is in parallel；
The source electrode of first high voltage field effect transistor leads to the first source electrode, the source of second high voltage field effect transistor
Pole leads to the second source electrode.
2. sampling pipe equivalent circuit as claimed in claim 1, it is characterised in that：First and second described high pressure field-effect is brilliant
Body Guan Jun picks up from standard BSIM models, and the channel width of the first high voltage field effect transistor is the second high voltage field effect transistor
300~800 times.
3. sampling pipe equivalent circuit as claimed in claim 1, it is characterised in that：Described VCVS, by first
The control of high voltage field effect transistor drain voltage and grid voltage, it is exported enters to the drain voltage of the second high pressure FET
Row compensation.
4. the emulation mode of sampling pipe equivalent circuit as claimed in claim 1, it is characterised in that：Comprise the following steps：
The first step, builds sampling pipe equivalent circuit；
Second step, is emulated according to the sampling pipe equivalent circuit of structure；
During emulation, compensation output voltage V=k*Vs of VCVS；
Vs is the voltage of the second source electrode, and k is coefficient；
Using SPICE language and above-mentioned formula, it is defined as follows to VCVS：
ex1 <Drain port 1><Drain port 2> poly(1) <Second source electrode port> 0 0 pp1
PP1 is, based on the extra fitting parameter beyond BSIM, to be equal to foregoing coefficient k, poly (1) for emulator language, represent 1
Rank linear representation, PP1 is linear coefficient；
The voltage linear relational expression of voltage difference and drain electrode port 1 between second source electrode and ground connection, and add linear
FACTOR P P1 is as new additional model parameters, PP1 parameter extracting steps：
A) test obtains the Is-Vd curve datas of the second high voltage field effect transistor first, then utilizes BSIM model extractions the
Two source voltages are the i-v curve parameter under the conditions of 0V；
B) obtained Is-Vd curve numbers are tested in the case where the second high voltage field effect transistor source voltage is 1V and other voltages
According to；
C) using the equivalent circuit built, first and second high voltage field effect transistor is all described with standard BSIM models, imitative
PP1 parameters are adjusted in true device so that emulation data are fitted with measured data, obtain PP1 parameters during optimal simulation curve
Extraction is obtained.
5. the emulation mode of sampling pipe equivalent circuit as claimed in claim 4, it is characterised in that：In the first step, sampling
Pipe equivalent circuit includes first and second high voltage field effect transistor, a VCVS, first, second high-voltage field
The gate connected in parallel of effect transistor draws the grid to form sampling pipe equivalent circuit；
The positive pole of the VCVS connects the drain electrode of the second high voltage field effect transistor, and its negative pole and the first high-voltage field are imitated
Answer the drain electrode of transistor to connect and draw, form the drain electrode of sampling pipe equivalent circuit；
The source electrode of the first high voltage field effect transistor is connected after the body end of first and second high voltage field effect transistor is in parallel；
The source electrode of first high voltage field effect transistor leads to the first source electrode, the source of second high voltage field effect transistor
Pole leads to the second source electrode.
6. the emulation mode of sampling pipe equivalent circuit as claimed in claim 5, it is characterised in that：First and second described is high
Effect transistor of having a meeting, an audience, etc. well under one's control picks up from standard BSIM models, and the channel width of the first high voltage field effect transistor is the second high-voltage field effect
Answer transistor 300~800 times.
7. the emulation mode of sampling pipe equivalent circuit as claimed in claim 5, it is characterised in that：Described voltage control voltage
Source, is controlled by the first high voltage field effect transistor drain voltage and grid voltage, and it is exported to the second high pressure FET
Drain voltage is compensated.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971569A (en) * | 2005-11-22 | 2007-05-30 | 上海华虹Nec电子有限公司 | An improved simulation model of high-voltage device and its application method |
| CN102622022A (en) * | 2011-01-30 | 2012-08-01 | 波音公司 | Voltage controlled current source for voltage regulation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012150579A (en) * | 2011-01-17 | 2012-08-09 | Taiyo Yuden Co Ltd | Capacitor circuit simulation model and construction method thereof, circuit simulation method, and circuit simulator |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971569A (en) * | 2005-11-22 | 2007-05-30 | 上海华虹Nec电子有限公司 | An improved simulation model of high-voltage device and its application method |
| CN102622022A (en) * | 2011-01-30 | 2012-08-01 | 波音公司 | Voltage controlled current source for voltage regulation |
Non-Patent Citations (1)
| Title |
|---|
| "高精度恒流源的设计与制作";米卫卫等;《电子测试》;20121231;65-71 * |
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