CN1964061A - Electrode substrate for organic light-emitting display device - Google Patents
Electrode substrate for organic light-emitting display device Download PDFInfo
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- CN1964061A CN1964061A CN 200610098143 CN200610098143A CN1964061A CN 1964061 A CN1964061 A CN 1964061A CN 200610098143 CN200610098143 CN 200610098143 CN 200610098143 A CN200610098143 A CN 200610098143A CN 1964061 A CN1964061 A CN 1964061A
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- layer
- conductor layer
- electrode
- organic light
- emitting display
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- 239000000758 substrate Substances 0.000 title abstract description 12
- 239000004020 conductor Substances 0.000 claims description 48
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 12
- 229910017604 nitric acid Inorganic materials 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- OSYLPIYJUCCMTQ-UHFFFAOYSA-O azanium;cerium(3+);nitrate Chemical group [NH4+].[Ce+3].[O-][N+]([O-])=O OSYLPIYJUCCMTQ-UHFFFAOYSA-O 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The disclosed electrode substrate of organic luminescent display device comprises a wire area with an electrode layer, an adhesion layer and a wire layer. Wherein, the adhesion layer contains one or more elements both in electrode layer and wire layer or the adhesion layer. This invention applies diffusion effect to improve adhesion force between three layers and the wire film appearance.
Description
Technical field
The present invention relates to a kind of electrode base board, relate in particular to a kind of electrode base board of organic light emitting display.
Background technology
Emerging in recent years display of organic electroluminescence (OLED) does not need backlight, the visual angle is big, power is low, its response speed can reach 1000 times of LCD, manufacturing cost but is lower than the LCD of equal resolution, therefore, display of organic electroluminescence (OLED) more and more is subjected to people's attention.
At present, the structure of the employed electrode base board of OLED display screen comprises substrate, electrode layer, conductor layer.The material that is used for substrate has glass, plastics etc.; Electrode layer is positioned on the substrate, and used material has ITO, IZO, ZnO etc., and these materials have characteristic transparent and conduction simultaneously, but these material conductances are not high, and electric current can produce a large amount of Joule heats through out-of-date, the luminous efficiency of influence screen body; Conductor layer is positioned on the electrode layer, is used to reduce the resistance of the resistance of electrode layer, particularly lead district, to improve the efficient of whole screen body.Using more at present, the conductor layer material is refractory metal materials such as chromium, molybdenum.Though these materials are more stable and make simply relatively, because they all have very high resistance, cause the luminous efficiency of display not high.
Therefore, the used material of conductor layer must have lower resistivity.Silver, copper, three kinds of metals of aluminium are very low materials of resistivity in the metal material, and have good ductility, get a good chance of being used for display floater.But adhesion is not strong between these three kinds metal conductor layer films and the electrode layer, particularly after long-time the use, because the heat that the energising back produces and the influence of atmosphere such as the oxygen in the environment, sulphur, the change of film morphology appears easily, make conductor layer come off or separate from electrode layer, and then cause the resistance of substrate to rise the decrease in efficiency of luminescent device.
Summary of the invention
The object of the present invention is to provide a kind of applicating property that can strengthen between conductor layer and the electrode layer that has, be etched easily, and the electrode base board of the organic light emitting display of its etching liquid adhesion layer identical with the conductor layer etching solution.
The objective of the invention is to be achieved by the following technical programs: its conductor section structure comprises electrode layer, conductor layer in turn; Also be provided with adhesion layer between electrode layer and the conductor layer, it is characterized in that, contain one or more elements in the electrode layer in the described adhesion layer, also contain one or more elements in the conductor layer simultaneously, perhaps contain one or more total in electrode layer and conductor layer elements in the adhesion layer.
Contain one or more elements in indium, tin, zinc, nickel or silver, copper, the aluminium in the described adhesion layer.
The material of described conductor layer is argent, silver alloy, contain the mixture of silver metal, metallic copper, copper alloy, the mixture that contains the copper metal, metallic aluminium, aluminium alloy or contain the mixture of aluminum metal.
The thickness of described conductor layer is 100nm～600nm.
The present invention is based on the alloy of silver, copper, aluminum metal or argentiferous, copper, aluminium, when this class low electrical resistant material of mixture is used for conductor layer, propose with this problem of electrode layer tack difference, one deck is set between electrode layer and conductor layer contains one or more elements in the electrode layer, also contain one or more elements in the conductor layer simultaneously, the adhesion layer that contains in electrode layer and the conductor layer one or more total elements is perhaps made by diffusion to have good adhesive between three layers.In addition, behind the use adhesion layer, the surface topography of conductor layer film can be better than independent conductor layer film, is unlikely to make conductor layer to come off from electrode layer.Adhesion layer, conductor layer can use with a kind of etching solution simultaneously, and manufacturing process is simple.
Description of drawings
Fig. 1 is the structural representation before the embodiment of the invention 1-6 etching;
Fig. 2 is the structural representation after the embodiment of the invention 1-6 etching.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples.
Embodiment 1
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the ITO (150nm) that serves as electrode layer 1, adopt the method for sputter that indium, silver-colored mixture target are prepared into adhesion layer 2 (5nm) thereon, prepare silver-colored conductor layer 3 with silver-colored target as sputter, film thickness is 160nm.
It is phosphoric acid that argent conductor layer 3 and indium metal, silver-colored mixture adhesion layer 2 can adopt volume ratio: nitric acid: the etching solution of water=9: 1: 3 carries out the while etching, and etch-rate is 40A/s.It is nitric acid that ITO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 10A/s.By above-mentioned condition, can prepare structure as Fig. 2.Conductor layer 3 surface sides hinder and are 0.1ohm/sq, and heating is 30 minutes under 120 degree, and surface side hinders and is 0.11ohm/sq, and it is good to examine under a microscope film surface appearance, do not have tangible projection and peel off, and present the good stable performance.
Embodiment 2
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the ITO (150nm) that serves as electrode layer 1, the method that adopts sputter thereon is prepared into adhesion layer 2 (5nm) with the sn-ag alloy target of stanniferous 2%, prepare silver-colored conductor layer 3 with silver-colored target as sputter, film thickness is 160nm.
It is phosphoric acid that argent conductor layer 3 and metallic tin silver alloy adhesion layer 2 can adopt volume ratio: nitric acid: the etching solution of water=9: 2: 3 carries out the while etching, and etch-rate is 60A/s.It is nitric acid that ITO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 10A/s.By above-mentioned condition, can prepare structure as Fig. 2.Resulting electrode base board sheet resistance is 0.11ohm/sq, and 80 degrees centigrade were heated 30 minutes down, and sheet resistance is 0.12ohm/sq, and resistance variations is less than 15% before and after the heating; Heating is after 1 hour under 200 degrees centigrade, and sheet resistance is 0.16ohm/sq, and it is good to examine under a microscope film surface appearance, does not have tangible projection and peels off, and presents good stable.
Embodiment 3
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the IZO (180nm) that serves as electrode layer 1, adopt the method for sputter that zinc, silver-colored mixture target are prepared into adhesion layer 2 (5nm) thereon, prepare silver-colored conductor layer 3 with silver-colored target as sputter, film thickness is 160nm.
It is phosphoric acid that argent conductor layer 3 and metallic zinc, silver-colored mixture adhesion layer 2 can adopt volume ratio: nitric acid: the etching solution of water=9: 3: 4 carries out the while etching, and etch-rate is 50A/s.It is nitric acid that IZO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 20A/s.By above-mentioned condition, can prepare structure as Fig. 2.Resulting electrode base board sheet resistance is 0.11ohm/sq, and 80 degrees centigrade were heated 30 minutes down, and sheet resistance is 0.12ohm/sq, and resistance variations is less than 15% before and after the heating; Heating is after 1 hour under 200 degrees centigrade, and sheet resistance is 0.15ohm/sq, and it is good to examine under a microscope film surface appearance, does not have tangible projection and peels off, and presents good stable.
Embodiment 4
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the ITO (180nm) that serves as electrode layer 1, and contain 1% nickel therein, adopt the method for sputter to prepare the nickeline mixed layer thereon, prepare silver-colored conductor layer 3 (180nm) with silver-colored target as sputter as adhesion layer 2 (5nm).
It is phosphoric acid that argent conductor layer 3 and metal nickeline mixing adhesion layer 2 can adopt volume ratio: nitric acid: the etching solution of water=8: 2: 3 carries out the while etching, and etch-rate is 50A/s.It is nitric acid that ITO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 10A/s.By above-mentioned condition, can prepare structure as Fig. 2.Resulting electrode base board sheet resistance is 0.11ohm/sq, and 80 degrees centigrade were heated 30 minutes down, and sheet resistance is 0.11ohm/sq, and resistance variations is less than 15% before and after the heating; Heating is after 1 hour under 200 degrees centigrade, and sheet resistance is 0.14ohm/sq, and it is good to examine under a microscope film surface appearance, does not have tangible projection and peels off, and presents good stable.
Embodiment 5
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the ITO (150nm) that serves as electrode layer 1, adopt the method for sputter that the indium target is prepared into adhesion layer 2 (5nm) thereon, prepare silver alloy conductor layer 3 with the aluminium indium alloy target as sputter that contains 0.5% indium, film thickness is 160nm.
It is phosphoric acid that aluminium indium alloy conductor layer 3 and indium metal adhesion layer 2 can adopt volume ratio: nitric acid: the etching solution of water=8: 1: 3 carries out the while etching, and etch-rate is 30A/s.It is nitric acid that ITO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 10A/s.By above-mentioned condition, can prepare structure as Fig. 2.Conductor layer 3 surface sides resistances is 0.3ohm/sq, 120 ℃ of heating 30 minutes down, surface side resistance is 0.33ohm/sq, it is good to examine under a microscope film surface appearance, do not have significantly protruding with peel off, present the good stable performance.
Embodiment 6
With reference to Fig. 1,2.The organic light-emitting display device electrode substrate of present embodiment comprises the ITO (150nm) that serves as electrode layer 1, adopt the method for sputter that the tin target is prepared into adhesion layer 2 (5nm) thereon, prepare chromium ashbury metal conductor layer 3 with the chromium ashbury metal target as sputter that contains 2% tin, film thickness is 250nm.
It is cerous ammonium nitrate that chromium ashbury metal conductor layer 2 and metallic tin adhesion layer 3 can adopt weight ratio: nitric acid: the etching solution of water=10: 6: 45 carries out the while etching, and etch-rate is 200A/s.It is nitric acid that ITO under it adopts volume ratio: hydrochloric acid: the etching solution of water=1: 10: 10 carries out etching, and etch-rate is 10A/s.By above-mentioned condition, can prepare structure as Fig. 2.Resulting electrode base board sheet resistance is 0.80ohm/sq, and 80 degrees centigrade were heated 30 minutes down, and sheet resistance is 0.85ohm/sq, and resistance variations is less than 15% before and after the heating; Heating is after 1 hour under 200 degrees centigrade, and sheet resistance is 0.88ohm/sq, and it is good to examine under a microscope film surface appearance, does not have tangible projection and peels off, and presents good stable.
About the reason that adhesive force improves, be that the cohesion energy that adheres to energy and main body under the situation of interface disappearance is approaching, reaches maximum because the elements such as tin, zinc, nickel or indium of formation adhesion layer 2 of the present invention are diffused on electrode layer 1ITO or the IZO with denier; On the other hand, elements such as the silver in the adhesion layer 2, copper, aluminium also are diffused on the conductor layer 3 with denier, and under the situation of interface disappearance, the cohesion energy that adheres to energy and main body is approaching, reaches maximum equally.If contain element total in electrode layer 1 and the conductor layer 3 in the adhesion layer 2, for example, contain indium in the adhesion layer 2, electrode layer 1 is ITO, conductor layer 3 is an AI alloy, phosphide element is diffused on the electrode layer 1ITO with denier, and the cohesion energy that adheres to energy and main body under the situation of interface disappearance is approaching, reaches maximum; Phosphide element also is diffused on the conductor layer 3 with denier simultaneously, and under the situation of interface disappearance, the cohesion energy that adheres to energy and main body is approaching, reaches maximum equally.So make and have good adhesive between three layers by diffusion.
Though more than described most preferred embodiment of the present invention, technical scope of the present invention is not limited to the scope of above-mentioned discussion.The above-mentioned embodiment that provides just only is used for further explaining the present invention on the basis of summary of the invention.It should be understood that those skilled in the art can make multiple improvement to said process, but this all class improvement belongs to all in the scope of the present invention also.
Claims (5)
1. the electrode base board of an organic light emitting display, its conductor section structure comprises electrode layer, conductor layer; Also be provided with adhesion layer between described electrode layer and the conductor layer, it is characterized in that, contain one or more elements in the electrode layer in the described adhesion layer, also contain one or more elements in the conductor layer simultaneously, perhaps contain one or more total in electrode layer and conductor layer elements in the adhesion layer.
2. the electrode base board of organic light emitting display according to claim 1 is characterized in that, contains one or more elements in indium, tin, zinc, nickel or silver, copper, the aluminium in the described adhesion layer.
3. the electrode base board of organic light emitting display according to claim 2 is characterized in that, the thickness of described adhesion layer is 1nm～20nm.
4. according to the electrode base board of claim 2 or 3 described organic light emitting displays, it is characterized in that the material of described conductor layer is argent, silver alloy, contain the mixture of silver metal, metallic copper, copper alloy, the mixture that contains the copper metal, metallic aluminium, aluminium alloy or contain the mixture of aluminum metal.
5. the electrode base board of organic light emitting display according to claim 4 is characterized in that, the thickness of described conductor layer is 100nm～600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610098143 CN1964061A (en) | 2006-11-30 | 2006-11-30 | Electrode substrate for organic light-emitting display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610098143 CN1964061A (en) | 2006-11-30 | 2006-11-30 | Electrode substrate for organic light-emitting display device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910141684A Division CN101661923A (en) | 2006-11-30 | 2006-11-30 | Electrode base plate of organic light-emitting device |
Publications (1)
| Publication Number | Publication Date |
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| CN1964061A true CN1964061A (en) | 2007-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610098143 Pending CN1964061A (en) | 2006-11-30 | 2006-11-30 | Electrode substrate for organic light-emitting display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505084A (en) * | 2015-09-03 | 2017-03-15 | 三星显示有限公司 | Oganic light-emitting display device and the method for manufacture oganic light-emitting display device |
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2006
- 2006-11-30 CN CN 200610098143 patent/CN1964061A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505084A (en) * | 2015-09-03 | 2017-03-15 | 三星显示有限公司 | Oganic light-emitting display device and the method for manufacture oganic light-emitting display device |
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