CN1963677A - A photoresist developer - Google Patents
A photoresist developer Download PDFInfo
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- CN1963677A CN1963677A CNA2005101013071A CN200510101307A CN1963677A CN 1963677 A CN1963677 A CN 1963677A CN A2005101013071 A CNA2005101013071 A CN A2005101013071A CN 200510101307 A CN200510101307 A CN 200510101307A CN 1963677 A CN1963677 A CN 1963677A
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- developer solution
- photoresistance
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- lithium
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Abstract
This invention relates to one light resistance image development liquid, which comprises Gemini surface active agent, alkalinity compound and solvent agent, wherein, the surface active agent has the following structure and the R1,R2,R3,R4,R5,R'1,R'2,R'3,R'4,R'5 separately are selected from hydrogen, alkyl, aryl, aralkyl radical, halide; R6 for 2 to 6 methano and n for 6 to 23 integral numbers.
Description
Technical field
The present invention relates to developer solution, particularly relate to alkaline water system photoresistance developer solution used when image forms behind a kind of photoresistance exposure.
Background technology
Photoresistance is widely used in the formation of Wiring pattern of integrated circuit, plated printed circuit, color liquid crystal device or colored filter.In the formation technology of Wiring pattern, at first dispersible pigment dispersion, solvent, photoresist and relevant adjuvant hybrid modulation are become photoresistance, then photoresistance is coated on the substrate and carried out in advance roasting, afterwards with after the light shield exposure, use the photoresistance at the unexposed position of developer solution flush away again, can make the photoresistance film of required pattern.The mode of coating has decoration method, print process, electricity work method and pigment dispersing method, and common visualization way has immersion development, shakes development, spray developing, leave standstill development.
In known developer solution technology; photoresistance is after filming and baking in advance, expose; though can with alkaline-based developer dissolve remove unexposed do not want be coated with membrane portions; but be easy to generate do not develop position particle or dissolved matter remaining not when developing, the back of therefore developing is difficult to form accurate photoresistance image (referring to Japanese patent laid-open 01-102429,01-152449,01-254918,02-166452 number).Japanese patent laid-open 06-308316 number the organic solvent by adding part cellulose, ether, ketone, ester in developer solution improves the development of developer solution, but also bad to the removal effect of residue, defoaming is also relatively poor; In order to improve the shortcoming of development difference, disclosed the developer solution made from water, alkali compounds, anionic surfactant for Japanese patent laid-open 06-109916,10-010749 number, though containing the developer solution of anionic surfactant, this kind have no residue, effect that development is good in use, but the dispersion stabilization of the defoaming of developer solution, operating conditions and photoresistance is poor, and is therefore unsatisfactory in the use.
When photoresistance developed, when having air to enter in the developer solution, developer solution will foam, and will put aside in developer solution when these foam froth breakings are insufficient.Along with the increase of the photoresistance composition that dissolves in developer solution or disperse, the foam that produces in the developer solution is difficult to eliminate.Foam obstruction developer solution contacts with photoresistance, thereby causes can not fully removing the photoresistance of unexposed portion and can not forming good photoresistance pattern.In addition, for the spray developing of generally using at present, owing to develop, easilier in developer solution cause foaming by spraying developer solution is ejected on the photoresistance after the exposure fully.
In order to suppress the foaming of developer solution, often in developer solution, add defoamer.As the defoamer that developer solution is used, for example can use acetylene alcohol surfactants (Japanese patent laid-open 4-51020 number), poly alkylene glycol and derivant thereof (Japanese patent laid-open 07-128865,08-10600,08-87382,09-172256,10-319606,2001-222115 number), higher fatty acid monoglyceride (Japanese patent laid-open 09-293964 number).But defoamer in the past can aggegation in developer solution, becomes the scum silica frost of oily, and scum silica frost is attached to photoresistance or substrate surface, thereby the photoresistance pattern out of true and the base material that cause forming are polluted.And these defoamers are at the initial stage of its use, though have defoaming effect to a certain degree, along with the increase of dissolving in developer solution or the resist composition that disperses, defoaming effect sharply descends.
Chinese patent CN1126006C discloses a kind of alkaline water system developer composition used when being used for photoresist exposure back image and forming, comprise water, alkali compounds and non-ionic surfactant, non-ionic surfactant wherein is that the degree of polymerization is 15 polyethylene oxide aryl ether.Residue is few though this developer solution that contains nonionic surfactant has in use, the good effect of dispersion stabilization of development and chromatic photoresist, but defoaming, the operating temperature of developer solution are not still fully improved, and be therefore still undesirable in the use.
Summary of the invention
The present invention is intended to overcome the prior art developer solution and can not takes into account development, defoaming, dispersion stabilization in use simultaneously or need to add the defective of defoamer with the defoaming that improves developer solution, and can improve the developer composition of development, defoaming and dispersion stabilization when a kind of the use is provided simultaneously.
The inventor is unexpected to be found, by Gemini type surfactant and alkali compounds mating reaction, can reduce even eliminate fully the appearance of developer solution residue in developing process greatly, also can improve simultaneously the defoaming and the dispersion stabilization of developer solution greatly, the combination property of developer solution is greatly enhanced.
For this reason, the invention provides a kind of photoresistance developer solution, this developer solution contains:
At least a weight percent content is 0.01～3% the Gemini type surfactant with following structural formula:
In the formula, R
1, R
2, R
3, R
4, R
5, R '
1, R '
2, R '
3, R '
4, R '
5Be independently selected from hydrogen, alkyl, aryl, aralkyl or halogen respectively; R
6Be 2～6 methylene; N is the integer of 6-23, and at least a weight percent content is the alkali compounds of 0.01-3%; Surplus is a solvent.
The R of described Gemini type surfactant structure formula
1, R
2, R
3, R
4, R
5, R '
1, R '
2, R '
3, R '
4, R '
5In at least two be aryl and/or aralkyl, the weight percent content of Gemini type surfactant is 0.01～3.00%.
The weight percent content of described alkaline matter is 0.01～3.00%, it is selected from organic basic material and/or inorganic base substance, more specifically, described organic base is selected from one or more in hydrogen-oxygen tetramethylammonium, 2-hydroxyl-hydrogen-oxygen trimethylammonium, single methylamine, dimethylamine, trimethylamine, triethylamine, single isopropylamine, diisopropylamine, the ethylaminoethanol.Described inorganic base is selected from one or more in lithium hydroxide, NaOH, potassium hydroxide, dibastic sodium phosphate, sodium dihydrogen phosphate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, lithium phosphate, lithium metasilicate, potassium silicate, sodium silicate, lithium carbonate, sal tartari, sodium carbonate, lithium borate, the sodium borate.
Described solvent is a water.
Contribution of the present invention is, because dexterously with Gemini type surfactant and alkaline matter mating reaction, makes the developer solution of formation need not to add defoamer and can obtain excellent comprehensive performances, and promptly defoaming by force, no residue, development and dispersion stabilization be good.Even developer solution of the present invention does not observe residue yet under 1000 power microscopes, and the disclosed developer solution of CN1126006C can also be observed a small amount of residue under 250 power microscopes, so the present invention has realized that developer solution does not truly have residue.Foam height when developer solution of the present invention vibrates also is reduced to below 0.5 centimetre by 1.5 centimetres of the prior art, and the reduction amplitude of foam height reaches 67%, and dispersion stabilization also improves greatly.
Embodiment
The following example is to further explanation of the present invention and explanation, and the present invention is not constituted any limitation.
Photoresistance developer solution of the present invention contains alkali compounds, Gemini type surfactant and solvent, and wherein, Gemini type surfactant has following structural formula (I),
In the formula (I), R
1, R
2, R
3, R
4, R
5, R '
1, R '
2, R '
3, R '
4, R '
5Be independently selected from hydrogen, alkyl, aryl, aralkyl, halogen respectively; R
6Be 2～6 methylene; N is the integer of 6-23.
Although above-mentioned Gemini type surfactant all can be realized purpose of the present invention, under the preferable case, R
1, R
2, R
3, R
4, R
5, R '
1, R '
2, R '
3, R '
4, R '
5In at least 2 be aryl or aralkyl, promptly at least two are aryl, or at least two be aralkyl, perhaps at least one is that aryl, one are aralkyl.
In the developer solution of the present invention, the content of described Gemini type surfactant can be conventional content, in general, total amount with developer composition is a benchmark, the content of above-mentioned Gemini type surfactant is 0.01～3.00 weight %, be preferably 0.05-1.00 weight %, more preferably 0.1-0.50 weight %.
Described Gemini type surfactant comprises following compound:
1) 2-[polyethylene oxide-3,5-hexichol ethylphenyl ether] ethane (oxirane 9 More's addition products), abbreviate P as
1, the concrete structure formula is:
2) 2-[polyethylene oxide-3,5-hexichol ethylphenyl ether] ethane (oxirane 12 More's addition products), abbreviate P as
2, the concrete structure formula is:
3) 2-[polyethylene oxide-3,5-hexichol ethylphenyl ether] normal butane (oxirane 9 More's addition products), abbreviate P as
3, the concrete structure formula is:
4) 2-[polyethylene oxide-3,5-hexichol ethylphenyl ether] normal butane (oxirane 12 More's addition products), abbreviate P as
4, the concrete structure formula is:
Above-mentioned Gemini type surfactant can obtain by prior art is synthetic, also can be commercially available, and for example can choose the Gemini type surfactant of the good fluorine chemistry of silicones of snow company.
Because the present invention only relates to the surfactant in the developer solution is improved, thereby wherein said alkaline matter and solvent and their content had no particular limits.For example, described alkaline matter can be the various known alkaline matter that is used as photoresistance developer solution composition in the prior art, its content also can be conventional content, for example, described alkaline matter can be organic basic compound and/or inorganic alkaline compound, and described organic basic compound can be selected from one or more in hydrogen-oxygen level Four ammonium salt compounds, the organic amine.The example of hydrogen-oxygen level Four ammonium salt comprises hydrogen-oxygen tetramethylammonium, 2-hydroxyl-hydrogen-oxygen trimethylammonium; The example of organic amine comprises single methylamine, dimethylamine, trimethylamine, triethylamine, single isopropylamine, diisopropylamine, ethylaminoethanol.Described inorganic alkaline compound can be selected from one or more in lithium hydroxide, NaOH, potassium hydroxide, dibastic sodium phosphate, sodium dihydrogen phosphate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, lithium phosphate, lithium metasilicate, potassium silicate, sodium silicate, lithium carbonate, sal tartari, sodium carbonate, lithium borate, the sodium borate.Total amount with developer composition is a benchmark, and the content of above-mentioned alkali compounds is 0.01～3.00 weight %, is preferably 0.03～1.00 weight %, more preferably 0.05～0.10 weight %.When the content of alkali compounds was lower than 0.01 weight %, the development capability of developer solution was low, and development is poor; When the content of alkali compounds was higher than 3.00 weight %, the development capability of developer solution was too strong, and development is also poor.
Described solvent can be organic solvent or water as the dispersion medium of developer solution, and what described organic solvent was the most frequently used is the halogen solvent of trichloroethanes.Because the organic solvent harm that can bring environmental protection, health and secure context, thus gradually by hypotoxicity, do not burn, manage easily, water replacement that liquid waste processing is easy, with low cost.Thereby solvent is preferably water described in the developer solution of the present invention.
Developer solution of the present invention is applicable to the development of various photoresistances, for example can be eurymeric photoresistance or negativity photoresistance.The structure of described photoresistance and composition have been conventionally known to one of skill in the art, for example contain organic or inorganic pigment, alkali-soluble matrix resin, photo-sensitive monomer, light trigger and solvent usually, alkali-soluble matrix resin wherein can be selected from the polymkeric substance of novolac resin, acrylic ester resin, maleic anhydride or its half ester, poly-hydroxy benzenes, and preferred acrylate is a resin.Described acrylic ester resin is to be the resin of Main Ingredients and Appearance with (methyl) acrylate and/or (methyl) acrylic acid.
The following examples help to understand better the present invention.Unless stated otherwise, concentration is mass percent concentration described in the embodiment of the invention.
Embodiment 1
Present embodiment is used to illustrate the preparation of developer solution of the present invention.
With the 2-[polyethylene oxide-3 of 0.6 weight portion, 5-hexichol ethylphenyl ether] ethane (oxirane 9 More's addition products) joins in the water of 98.9 weight portions with the KOH of 0.5 weight portion, is mixed with developer solution S1 under normal temperature, stirring condition.
Embodiment 2
Present embodiment is used to illustrate the preparation of developer solution of the present invention.
Basic step is with embodiment 1, and difference is the component and the content difference of developer solution, makes developer solution S2 thus, and is as shown in table 1.
Embodiment 3～16
Adopt Gemini type surfactant P1～P4 and different component and content respectively, can make the developer solution S3～S16 of embodiment 3～16 in the table 1.
Comparative Examples 1
This example is used for illustrating the preparation of prior art developer solution.
The step that repeats embodiment prepares developer solution C1 of the prior art, and different is, the surfactant of developer solution adopts the polyoxyethylene phenyl ether, wherein, polyethylene oxide-3,5-hexichol ethylphenyl ether (oxirane abbreviates 9 More's addition products as) abbreviates B as
1, polyethylene oxide-3,5-hexichol ethylphenyl ether (oxirane abbreviates 12 More's addition products as) abbreviates B as
2, polyethylene oxide-3,5-hexichol ethylphenyl ether (oxirane abbreviates 18 More's addition products as) abbreviates B as
3, polyethylene oxide-3,5-hexichol ethylphenyl ether (oxirane abbreviates 21 More's addition products as) abbreviates B as
4, concrete component and content are as shown in table 1.
Above-mentioned polyoxyethylene phenyl ether can obtain by prior art is synthetic, also can be commercially available, for example can be available from the Jiangsu chemical company limited of circling in the air.
Comparative Examples 2～4
Adopt polyoxyethylene phenyl ether surfactant B 2～B4 and different component and content can make the developer solution C2～C4 of Comparative Examples 2～4 in the table 1 respectively.
The comparison example of the present invention and prior art sees Table 1:
Table 1
| The embodiment numbering | Non-ionic surfactant is formed | Surfactant concentration | The alkali kind | Alkali concn |
| Embodiment 1 | P 1 | 0.6 | NaOH | 0.50 |
| Embodiment 2 | P 1 | 0.2 | KOH | 0.03 |
| Embodiment 3 | P 1 | 0.5 | Na 2CO 3 | 0.06 |
| Embodiment 4 | P 1 | 0.05 | KOH | 0.06 |
| Embodiment 5 | P 2 | 0.2 | KOH | 0.09 |
| Embodiment 6 | P 2 | 0.4 | NaOH | 0.06 |
| Embodiment 7 | P 2 | 0.05 | Na 2CO 3 | 0.06 |
| Embodiment 8 | P 2 | 0.3 | KOH | 0.06 |
| Embodiment 9 | P 3 | 0.5 | (CH 3) 4NOH | 0.03 |
| Embodiment 10 | P 3 | 0.01 | KOH | 0.06 |
| Embodiment 11 | P 4 | 0.2 | Na 2CO 3 | 0.06 |
| Embodiment 12 | P 4 | 0.5 | KOH | 0.06 |
| Embodiment 16 | P 4 | 0.05 | Na 2CO 3 | 0.06 |
| Comparative Examples 1 | B 1 | 0.2 | KOH | 0.06 |
| Comparative Examples 2 | B 2 | 0.2 | KOH | 0.06 |
| Comparative Examples 3 | B 3 | 0.2 | KOH | 0.06 |
| Comparative Examples 4 | B 4 | 0.2 | KOH | 0.06 |
The development of developer solution
Photoresistance Fijifilm CB-B252 is coated on the glass substrate in the mode of rotary coating, and with 110 ℃ of following preliminary dryings after 21 seconds, with the ultraviolet exposure of 150 milli Jiao/square centimeters 3 seconds, can form the development base material for preparing the formation image again.With made development base material about 1 minute of dipping in developer solution S1～16 that the foregoing description 1～16 and Comparative Examples 1～4 make and C1～4, and then in 50 ℃ of bakings 1 hour, can on aforementioned glass baseplate, form image, rerum natura after the development is the following manner evaluation of the combination property of developer solution, and evaluation result sees Table 2.
The present invention adopts following known method that the developer solution performance is estimated:
1, development: with the integrality of gauging machine sight glass substrate epigraph formation and the planarization of image border.
Zero: represent
△: expression is general
*: it is poor to represent
2, residue: whether residue is arranged with the non-image position of scanning electron microscope on 1000 times of following sight glass substrates.
Zero: represent no residue
△: represent a small amount of residue
*: represent a large amount of residues
3, defoaming: 20 milliliters of prepared developer solutions are contained in 100 milliliters of graduated cylinders, and after swaying 30 minutes under 150 times/minute the frequency, left standstill 1 hour, measure foam height with rectilinear shaker.Do following evaluation according to foam height:
Zero: expression is below 0.5 centimetre
△: represent 0.5～1.0 centimetre
*: expression is more than 1.0 centimetres
4, dispersion stabilization: add 1 gram photoresistance in 200 milliliters of developer solutions, mix and shake the back with 5 microns filter paper filterings, at 100 ℃ filter paper is baked to constant weight again, the net weight of weighing filter paper provides following evaluation according to the net weight of filter paper:
Zero: the expression net weight is less than 0.02 gram
△: expression net weight 0.02-0.04 gram
*: the expression net weight is greater than 0.04 gram
Evaluation result sees Table 2:
Table 2
| Example number | Development | Residue | Defoaming | Dispersion stabilization |
| Embodiment 1 | ○ | ○ | ○ | ○ |
| Embodiment 2 | ○ | ○ | ○ | ○ |
| Embodiment 3 | ○ | ○ | ○ | ○ |
| Embodiment 4 | ○ | ○ | ○ | ○ |
| Embodiment 5 | ○ | ○ | ○ | ○ |
| Embodiment 6 | ○ | ○ | ○ | ○ |
| Embodiment 7 | ○ | ○ | ○ | ○ |
| Embodiment 8 | ○ | ○ | ○ | ○ |
| Embodiment 9 | ○ | ○ | ○ | ○ |
| Embodiment 10 | ○ | ○ | ○ | ○ |
| Embodiment 11 | ○ | ○ | ○ | ○ |
| Embodiment 12 | ○ | ○ | ○ | ○ |
| Embodiment 13 | ○ | ○ | ○ | ○ |
| Embodiment 14 | ○ | ○ | ○ | ○ |
| Embodiment 15 | ○ | ○ | ○ | ○ |
| Embodiment 16 | ○ | ○ | ○ | ○ |
| Comparative example 1 | × | △ | △ | × |
| Comparative example 2 | △ | △ | △ | × |
| Comparative example 3 | △ | △ | △ | △ |
| Comparative example 4 | ○ | △ | × | △ |
From the result of table 2 as can be seen, developer solution of the present invention need not to add defoamer can obtain extraordinary development, defoaming, dispersion stabilization, and image do not have residue, and above-mentioned every performance all is better than the every respective performances in the Comparative Examples.
Claims (7)
- Used alkaline water system photoresistance developer solution when 1, image forms behind a kind of photoresistance exposure is characterized in that this developer solution contains:At least a weight percent content is 0.01～3% the Gemini type surfactant with following structural formula:
In the formula, R 1, R 2, R 3, R 4, R 5, R ' 1, R ' 2, R ' 3, R ' 4, R ' 5Be independently selected from hydrogen, alkyl, aryl, aralkyl or halogen respectively; R 6Be 2～6 methylene; N is the integer of 6-23, and at least a weight percent content is 0.01～3% alkali compounds;Surplus is a solvent. - 2, photoresistance developer solution as claimed in claim 1 is characterized in that, the R of described Gemini type surfactant structure formula 1, R 2, R 3, R 4, R 5, R ' 1, R ' 2, R ' 3, R ' 4, R ' 5In at least two be aryl and/or aralkyl.
- 3, photoresistance developer solution as claimed in claim 1 is characterized in that, the weight percent content of described Gemini type surfactant is 0.01～3.00%.
- 4, photoresistance developer solution as claimed in claim 1 is characterized in that, the weight percent content of described alkaline matter is 0.01～3.00%.
- 5, photoresistance developer solution as claimed in claim 1 is characterized in that, described alkaline matter is selected from organic basic material and/or inorganic base substance.
- 6, photoresistance developer solution as claimed in claim 5, it is characterized in that, described organic base is selected from one or more in hydrogen-oxygen tetramethylammonium, 2-hydroxyl-hydrogen-oxygen trimethylammonium, single methylamine, dimethylamine, trimethylamine, triethylamine, single isopropylamine, diisopropylamine, the ethylaminoethanol, and described inorganic base is selected from one or more in lithium hydroxide, NaOH, potassium hydroxide, dibastic sodium phosphate, sodium dihydrogen phosphate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, lithium phosphate, lithium metasilicate, potassium silicate, sodium silicate, lithium carbonate, sal tartari, sodium carbonate, lithium borate, the sodium borate.
- 7, photoresistance developer solution as claimed in claim 1 is characterized in that, described solvent is a water.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101013071A CN100557514C (en) | 2005-11-08 | 2005-11-08 | A kind of photoresistance developer solution |
| PCT/CN2006/001031 WO2007028294A1 (en) | 2005-09-05 | 2006-05-19 | A developer solution for photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101013071A CN100557514C (en) | 2005-11-08 | 2005-11-08 | A kind of photoresistance developer solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1963677A true CN1963677A (en) | 2007-05-16 |
| CN100557514C CN100557514C (en) | 2009-11-04 |
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ID=38082776
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101013071A Expired - Fee Related CN100557514C (en) | 2005-09-05 | 2005-11-08 | A kind of photoresistance developer solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100557514C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219731A (en) * | 2017-05-11 | 2017-09-29 | 苏州新滤精环保科技有限公司 | A kind of developer composition and preparation method thereof |
| CN110471262A (en) * | 2019-08-28 | 2019-11-19 | 华璞微电子科技(宁波)有限公司 | A kind of colored filter developer composition |
| CN111344877A (en) * | 2017-11-17 | 2020-06-26 | 弗莱克英纳宝有限公司 | Method for manufacturing organic semiconductor element |
-
2005
- 2005-11-08 CN CNB2005101013071A patent/CN100557514C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219731A (en) * | 2017-05-11 | 2017-09-29 | 苏州新滤精环保科技有限公司 | A kind of developer composition and preparation method thereof |
| CN111344877A (en) * | 2017-11-17 | 2020-06-26 | 弗莱克英纳宝有限公司 | Method for manufacturing organic semiconductor element |
| CN110471262A (en) * | 2019-08-28 | 2019-11-19 | 华璞微电子科技(宁波)有限公司 | A kind of colored filter developer composition |
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| Publication number | Publication date |
|---|---|
| CN100557514C (en) | 2009-11-04 |
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