CN102063024B - Developing solution composition - Google Patents
Developing solution composition Download PDFInfo
- Publication number
- CN102063024B CN102063024B CN201010604187.8A CN201010604187A CN102063024B CN 102063024 B CN102063024 B CN 102063024B CN 201010604187 A CN201010604187 A CN 201010604187A CN 102063024 B CN102063024 B CN 102063024B
- Authority
- CN
- China
- Prior art keywords
- ammonium salt
- amine
- polyoxyethylene
- solution composition
- developing solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to a developing solution composition, in particular to the developing solution composition related to a positive photoresist. The developing solution composition comprises the following raw materials in parts by weight: 0.1-15 parts by weight of alkaline compound, 0.1-15 parts by weight of nonionic surfactant, 0.1-1 part of cation surfactant, 0.01-5 parts of penetrating agent and the balance of pure water. The developing solution composition has the advantages of favorable developing property, low toxicity, no inflammability, easiness of management, simpleness and convenience of waste solution treatment, low cost and the like, prevents residual slag from generating and can form an image after the photoresist is exposed. The developing solution composition can be applied to the fields of liquid crystal displays (LCD), printed circuit boards (PCB), integrated circuits (IC) and the like.
Description
Technical field:
The present invention relates to a kind of developer solution component, refer in particular to a kind of developer solution component about positive corrosion-resisting agent.
Background technology:
Generally in the preparation technologies such as liquid crystal display, printed circuit board (PCB) and integrated circuit, for obtaining fine pattern, the responsive constituent of conventional photoresist isoradial forms film on base material with coating method, after overexposure, with alkaline-based developer video picture, remove painting membrane portions not, to obtain good figure.
In these offset printing operations, by exposure, the mask that is decorated with circuit pattern is transferred on the photoresist on wafer, then make the plane of exposure of above-mentioned photoresist contact with developer solution, for positivity, exposure be partially dissolved in developer solution, and for negativity, unexposed area is dissolved in developer solution.
First object of developing process is that unexposed positive corrosion-resisting agent film should be subject to developer extent of corrosion minimum.Actual development always has corrosion to a certain degree to unexposed resist, but due to the different solubility of exposure region and unexposed area, makes resist feasible process.In fact, the developer that range of choice is larger also takes longer to complete developed image.Like this, while selecting developer, just must consider different solubleness and production capacity.Should select its production capacity of a developer to meet the demands and not cause undue resist attenuation.In addition, developer also should have enough contents so that technique can maintain in growing environment.
Develop and have three kinds of main method: immerse, spray and stir and develop.
Yet according to the technology of known developer solution, photonasty resist film and pre-baked, exposure after, though dissolving, useful alkaline-based developer removes the part of filming unexposed and that do not want, but do not develop position particle or dissolved matter remaining not of easy generation when developing, therefore after developing, be relatively difficult to form meticulous image, thereby cannot meet the demand in market.
Summary of the invention:
Technical matters to be solved by this invention is just to overcome the existing deficiency of current developer solution, provides a kind of video picture good, avoids residue to generate, and can form the developer solution component of image after resist exposure.
For solving the problems of the technologies described above, the technical solution used in the present invention is: formation raw material and the weight proportion of this developer solution component are:
0.1~15 part of alkali compounds;
0.1~15 part of non-ionic surfactant;
0.1~1 part of cationic surfactant;
0.01~5 part of bleeding agent;
Remaining part of pure water.
In technique scheme, formation raw material and the weight proportion of described developer solution component are:
10 parts of alkali compounds;
8 parts of non-ionic surfactants;
0.5 part of cationic surfactant;
3 parts of bleeding agents;
78.5 parts of pure water.
Or in technique scheme, formation raw material and the weight proportion of described developer solution component are:
8 parts of alkali compounds;
6 parts of non-ionic surfactants;
0.3 part of cationic surfactant;
2.5 parts of bleeding agents;
83.2 parts of pure water.
In technique scheme, the effect of described alkali compounds is to dissolve the resist of non-image part, and this alkali compounds is inorganic alkaline compound or organic basic compound; Wherein, inorganic alkaline compound is: one or more in alkali-metal oxyhydroxide, supercarbonate, carbonate; Organic basic compound is: one or more in monomethyl amine, dimethyl amine, Trimethylamine, MEA, diethylamide, triethylamine, monoethanolamine, diethanolamine, triethanolamine, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, monoethanol dimethyl amine.
In technique scheme, described non-ionic surfactant is: one or more in polyxyethylated alkylphenol, polyoxyethylene aliphatic alcohol ether, polyoxyethylene fatty acid ester, polyoxyethylene fatty amine, polyoxyethylene polyols ester, dehydration sorbic alcohol ester.
In technique scheme, described cationic surfactant is: one or more in alkyl trimethyl ammonium salt, dialkyl dimethyl ammonium salt, acid amide type quaternary ammonium salt, ether quaternary ammonium salt.
In technique scheme, described bleeding agent is polyoxy ethane in polyethenoxy ether class bleeding agent and condensation product or the phosphate of higher aliphatic.
In technique scheme, described pure water is the water filtering through ion exchange resin, and its resistance is at least 18M Ω.
The invention has the advantages that: it is good that the present invention has video picture, avoid residue to generate, after resist exposure, can form image.Secondly, the present invention there is hypotoxicity, do not have inflammability and management easily, liquid waste processing is easy and the advantage such as with low cost.Again, the present invention can be used on the fields such as liquid crystal display (LCD), printed circuit board (PCB) (PCB), integrated circuit (IC).
Embodiment:
Below in conjunction with specific embodiment, the present invention is further described:
Embodiment mono-
The concrete raw material of the present embodiment one and weight are:
10 kilograms, carbonate;
8 kilograms of polyoxyethylene aliphatic alcohol ethers;
0.5 kilogram of ether quaternary ammonium salt;
3 kilograms of polyoxy ethane in polyethenoxy ether class bleeding agent and the condensation products of higher aliphatic;
78.5 kilograms of pure water.
Embodiment bis-
The concrete raw material of the present embodiment two and weight are:
8 kilograms of tetramethyl ammonium hydroxides;
6 kilograms of polyoxyethylene fatty amines;
0.3 kilogram of alkyl trimethyl ammonium salt;
2.5 kilograms of phosphates;
83.2 kilograms of pure water.
Certainly, the foregoing is only several example of the present invention, be not to limit the scope of the present invention, all equivalences of doing according to structure, feature and principle described in the present patent application the scope of the claims change or modify, and all should be included in the present patent application the scope of the claims.
Claims (2)
1. a developer solution component, is characterized in that: formation raw material and the weight proportion of this developer solution component are:
Described alkali compounds is inorganic alkaline compound or organic basic compound; Wherein, inorganic alkaline compound is: one or more in alkali-metal oxyhydroxide, supercarbonate, carbonate; Organic basic compound is: one or more in monomethyl amine, dimethyl amine, Trimethylamine, MEA, diethylamide, triethylamine, monoethanolamine, diethanolamine, triethanolamine, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, monoethanol dimethyl amine;
Described non-ionic surfactant is: one or more in polyxyethylated alkylphenol, polyoxyethylene aliphatic alcohol ether, polyoxyethylene fatty acid ester, polyoxyethylene fatty amine, polyoxyethylene polyols ester, dehydration sorbic alcohol ester;
Described cationic surfactant is: one or more in alkyl trimethyl ammonium salt, dialkyl dimethyl ammonium salt, acid amide type quaternary ammonium salt, ether quaternary ammonium salt;
Described bleeding agent is polyoxy ethane in polyethenoxy ether class bleeding agent and condensation product or the phosphate of higher aliphatic;
Described pure water is the water filtering through ion exchange resin, and its resistance is at least 18M Ω.
2. a developer solution component, is characterized in that: formation raw material and the weight proportion of this developer solution component are:
Described alkali compounds is inorganic alkaline compound or organic basic compound; Wherein, inorganic alkaline compound is: one or more in alkali-metal oxyhydroxide, supercarbonate, carbonate; Organic basic compound is: one or more in monomethyl amine, dimethyl amine, Trimethylamine, MEA, diethylamide, triethylamine, monoethanolamine, diethanolamine, triethanolamine, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, monoethanol dimethyl amine;
Described non-ionic surfactant is: one or more in polyxyethylated alkylphenol, polyoxyethylene aliphatic alcohol ether, polyoxyethylene fatty acid ester, polyoxyethylene fatty amine, polyoxyethylene polyols ester, dehydration sorbic alcohol ester;
Described cationic surfactant is: one or more in alkyl trimethyl ammonium salt, dialkyl dimethyl ammonium salt, acid amide type quaternary ammonium salt, ether quaternary ammonium salt;
Described bleeding agent is polyoxy ethane in polyethenoxy ether class bleeding agent and condensation product or the phosphate of higher aliphatic;
Described pure water is the water filtering through ion exchange resin, and its resistance is at least 18M Ω.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010604187.8A CN102063024B (en) | 2010-12-24 | 2010-12-24 | Developing solution composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010604187.8A CN102063024B (en) | 2010-12-24 | 2010-12-24 | Developing solution composition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102063024A CN102063024A (en) | 2011-05-18 |
CN102063024B true CN102063024B (en) | 2014-01-29 |
Family
ID=43998353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010604187.8A Expired - Fee Related CN102063024B (en) | 2010-12-24 | 2010-12-24 | Developing solution composition |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102063024B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102722092A (en) * | 2012-06-06 | 2012-10-10 | 乐凯华光印刷科技有限公司 | Developing solution applicable to photo-polymerization type lithographic printing plate |
CN107121898A (en) * | 2017-06-12 | 2017-09-01 | 合肥市惠科精密模具有限公司 | A kind of TFT LCD, which are shown, uses developer solution |
CN112612189B (en) * | 2021-01-18 | 2022-06-14 | 福建省佑达环保材料有限公司 | Positive photoresist developing solution for panel display |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0685767A1 (en) * | 1994-06-01 | 1995-12-06 | Hoechst Aktiengesellschaft | Developer for photoresist layers |
CN1392973A (en) * | 2000-09-21 | 2003-01-22 | 德山株式会社 | Developing solution for photoresist |
CN101251722A (en) * | 2008-03-19 | 2008-08-27 | 曹学增 | Positive photoresist striping liquid and method for making the same |
-
2010
- 2010-12-24 CN CN201010604187.8A patent/CN102063024B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0685767A1 (en) * | 1994-06-01 | 1995-12-06 | Hoechst Aktiengesellschaft | Developer for photoresist layers |
CN1392973A (en) * | 2000-09-21 | 2003-01-22 | 德山株式会社 | Developing solution for photoresist |
CN101251722A (en) * | 2008-03-19 | 2008-08-27 | 曹学增 | Positive photoresist striping liquid and method for making the same |
Also Published As
Publication number | Publication date |
---|---|
CN102063024A (en) | 2011-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4225909B2 (en) | Thinner composition | |
CN102063024B (en) | Developing solution composition | |
JP6860276B2 (en) | Cleaning agent composition for peeling resin mask | |
CN106227003A (en) | A kind of developer composition and preparation method thereof | |
CN103080844A (en) | Rinse liquid for lithography and method for forming pattern using same | |
CN101002287A (en) | Antistatic agent, antistatic film and product coated with antistatic film | |
CN1811602B (en) | Developer solution composition | |
KR20100014740A (en) | Photoresist developing solution | |
CN107145044A (en) | The developer composition that a kind of FPD is used | |
JP4315919B2 (en) | High concentration developer stock solution | |
CN102486619A (en) | Cleaning solution composition | |
TW200415441A (en) | Photoresist developer composition | |
CN101566804B (en) | Developing agent for flat-panel display | |
CN107121898A (en) | A kind of TFT LCD, which are shown, uses developer solution | |
KR101161051B1 (en) | Developer composition | |
CN1963677A (en) | A photoresist developer | |
CN105589303A (en) | High-capacity developing solution composition for thick film photoresists | |
CN109880699B (en) | Developing neutralizer | |
CN107728438B (en) | Novel solder resist developing solution and preparation method thereof | |
CN106154771A (en) | Activated water application in developer solution | |
CN101750910B (en) | Developer solution component | |
CN107357140A (en) | A kind of positive photoresist developer solution and its preparation method and application | |
JP2004126271A (en) | Liquid developer composition | |
TWI355568B (en) | ||
KR102684831B1 (en) | Cleaning method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Guangdong province Dongguan City Dalingshan Town 523000 Yang Wu Cun Bai Hua Po Industrial Zone Patentee after: Dongguan City Zhigao Chemical Materials Co., Ltd. Address before: 523000 Guangdong Province, Dongguan City Dalingshan Town Lake Industrial Park on Lake Avenue on the west side of Dongguan city Chicco chemical materials Co. Ltd. Patentee before: Dongguan City Zhigao Chemical Materials Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140129 Termination date: 20191224 |