CN1963575A - 放大光纤 - Google Patents

放大光纤 Download PDF

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CN1963575A
CN1963575A CNA2006101444128A CN200610144412A CN1963575A CN 1963575 A CN1963575 A CN 1963575A CN A2006101444128 A CNA2006101444128 A CN A2006101444128A CN 200610144412 A CN200610144412 A CN 200610144412A CN 1963575 A CN1963575 A CN 1963575A
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克里斯蒂安·西莫诺
洛朗·加斯卡
斯特凡妮·布朗尚丹
多米尼克·巴亚尔
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Usao Investment Co.,Ltd.
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    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
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Abstract

本发明涉及一种放大光纤，其包括含有掺杂剂(30)的纤芯(22)，以及包层(28)，其中所述纤芯包括：用于传播光信号的单模纤芯(24)，半导体材料的量子点(32)分布在所述单模纤芯(24)中或所述单模纤芯(24)附近；以及环绕单模纤芯(24)的用于接收泵浦信号的多模纤芯(26)。

Description

放大光纤
技术领域
本发明涉及放大光纤和光纤放大器的领域。
背景技术
图1概略地示出了一个光纤放大器。该放大器2包括一个输入端口4和一个输出端口6，用于连接到线路光纤。该放大器包括掺杂光纤8，泵浦源10和光耦合器12。泵浦源一般为激光器，其发出泵浦光信号，通过光耦合器12将该泵浦光信号注入掺杂光纤8。该泵浦光信号被掺杂光纤的纤芯中的掺杂剂(可以是选自稀土的，并且特别地可以是铒)吸收，所述光纤在去激励后，将所吸收能量的一部分传送给在端口4和端口6之间传播的光信号，由此来放大该光信号。
掺杂光纤可包括一个单模纤芯，该纤芯中有掺杂剂，并且泵浦光信号注入该纤芯中。掺杂光纤也可包括含有掺杂剂的单模纤芯和环绕该单模纤芯的用于接收泵浦信号的多模纤芯。此第二种实施例的优势在于能够注入更强的泵浦信号，并且能够在泵浦光信号和掺杂剂之间产生更好的耦合。
另外，例如根据J.D.Holmes等人的论文“Highly luminescent siliconnanocrystal with discrete optical transitions(非连续光跃迁的高发光硅纳米晶体)”(J.Am.Chem.Soc.123(2001)pp3743-3748)，已知可以通过使用量子点，特别是通过选择量子点的类型和量子点的尺寸来选择泵浦信号的波长。
然而量子点的吸收截面很大。相应地，在单模光纤的情况下，泵浦信号在50μm量级的光纤长度上被量子点吸收。利用目前的技术不可能在这样短的距离上插入足够浓度的掺杂剂，因此不可能有效地将量子点吸收的能量传送给掺杂剂。
为了解决这个难题，在J.Lee等人的论文“Optical gain at 1.5μm innanocrystal Si sensitized，Er-doped silica waveguide using top-doping 470nm LED(使用顶部掺杂470nm发光二极管的硅敏化纳米晶体掺铒二氧化硅波导在1.5μm处的光增益)”(OFC’04，PD19)中，提出了图2所示的装置。该装置包括一个具有硅量子点和铒掺杂剂、置于两个线光纤单元16和18之间的平面波导14，以及一个光电二极管条带20。条带20横向地向平面波导发送泵浦信号22，因此泵浦信号在足够长度的平面波导上注入。所描述的例子中平面波导的长度为11mm。
然而这个方法仍然不尽人意。实际上，显然波导不能太长(其长度与光电二极管条带长度的量级相同)，因此仍然需要对波导进行强掺杂。这将造成掺杂剂离子之间的相互作用，大大降低光转换的效果，从而降低要放大的光信号的放大效果。
而且，平面波导和圆形的线路光纤之间不可避免地会有耦合损耗。
发明内容
本发明的一个目的是在含有量子点的放大光纤的情况下，减少现有技术的缺陷。
更确切地，本发明涉及一种放大光纤，其包括含有掺杂剂的纤芯，以及包层，其特征在于所述纤芯包括：用于传播光信号的单模纤芯，半导体材料的量子点分布在所述单模纤芯中或所述单模纤芯附近；以及环绕单模纤芯的用于接收泵浦信号的多模纤芯。
所述半导体材料的量子点和/或所述掺杂剂优选地分布在单模纤芯中。
在一个优选实施例中，所述半导体材料的量子点和/或所述掺杂剂分布在单模纤芯周围的环中。
半导体材料优选地至少包括Si、Ge、PbTe、PbS材料之一。
本发明还涉及一种光纤放大器，包括根据本发明的放大光纤、光泵浦源以及用于将泵浦光信号注入放大光纤的多模纤芯的装置。
附图说明
通过阅读下文中参照附图借助示意性和非穷尽的例举给出的描述，可以更清楚地了解本发明的特征和优点，其中附图包括：
图1如上文所述概略地示出了一个光纤放大器的结构；
图2如上文所述示出了根据现有技术的包括含有量子点的掺杂波导的光纤放大器；
图3示出了根据本发明的放大光纤的第一实施例，以及
图4示出了根据本发明的放大光纤的第二实施例。
具体实施方式
图3的透视图中示出了根据本发明的第一实施例的放大光纤。该光纤包括纤芯22，其包括周围环绕着多模纤芯26的单模纤芯24，以及包层28。
单模纤芯24包括掺杂剂30，用于放大单模纤芯中传播的光信号。掺杂剂可以属于任何已知的类型，特别是一种稀土，并且特别是铒。单模纤芯还包括半导体材料的量子点32。
多模纤芯26用于接收泵浦光信号。这样，与图2所示的现有技术相比，本发明使泵浦信号在被量子点32吸收前可以传播很长距离。多模纤芯中对泵浦信号的吸收与多模纤芯的直径成反比。由于提供了更大的长度来吸收泵浦光信号，使掺杂剂能够在更长的距离上分布，从而降低了掺杂剂的浓度。
在本发明的一个优选的实施例中，半导体量子点由硅组成，并且掺杂剂为稀土(例如铒)离子。单模纤芯直径为4μm，并且多模纤芯直径为400μm。泵浦波长的选择应使半导体量子点对泵浦波长的有效截面小于或等于稀土离子的有效吸收截面的100倍。因此该波长取决于半导体量子点的尺寸和性质。硅量子点优选的尺寸为直径约3nm(不包括氧化层)。这个尺寸可以促进量子点和稀土离子之间的能量传送，同时使这些量子点的散射损耗最小。然而量子点的尺寸可以优选地在2nm-5nm的范围中。在硅量子点直径为3nm的情况下，泵浦波长可以优选地为400μm-500μm。在本实施例中，优选地铒离子的浓度不超过每立方厘米7.1018个离子，以限制离子间相互作用的效应，并且保持良好的转换效率。在此情况下，光纤的典型长度应为7m，以获得21dB的增益。
可以根据目标应用来选择量子点。特别地，所采用的材料和量子点的尺寸根据选定的泵浦信号波长而选定。
例如，量子点的半导体材料选择以下材料中的至少一种：Si、Ge、PbTe、PbS。
图4示出了根据本发明的第二实施例的放大光纤。与图3中相同的元件采用相同的参考标号。
图4的实施例与图3的实施例的不同之处在于：掺杂剂粒子30和半导体材料量子点32分布在单模纤芯24周围的环34中。
该实施例减小了多模纤芯的尺寸。如果环的位置和尺寸使得单模信号和掺杂面积之间的重叠部分的积分相对于纤芯中的掺杂减小3.33的因子，则散射损耗也降低3.33的因子。此外，与前面的情况比较，多模纤芯直径减小10的因子。因此在本实施例中，多模纤芯的直径为40μm，并且光纤长度为70m的量级。
该配置也可降低由量子点产生的散射所引起的损耗。事实上，量子点的折射率一般比光纤材料(一般为硅)的折射率高很多，随量子点尺寸的增大造成米氏(Mie)散射的增加。米氏(Mie)散射指振荡半径为波长的0.1～10倍的粒子的散射。注意当波长与粒子半径接近时散射能量最大。与瑞利定理相反，反射能量比入射波方向上的散射能量高。如果量子点位于单模纤芯周围的环中，就只有场边缘与量子点相互作用，因此降低了损耗。事实上，场和散射源(此处为量子点)之间的重叠部分的积分越小，散射损耗越低。
根据本发明的放大光纤用于与诸如源10之类的泵浦源，以及诸如装置12之类的用于将泵浦信号注入多模纤芯的装置相关联，以构成具有图1示出的结构的光纤放大器。

Claims (8)

1.一种放大光纤，包括含有掺杂剂(30)的纤芯(22)，以及包层(28)，其特征在于所述纤芯包括：
-用于传播光信号的单模纤芯(24)，半导体材料的量子点(32)分布在所述单模纤芯(24)中或所述单模纤芯(24)附近；以及
-环绕单模纤芯(24)的用于接收泵浦信号的多模纤芯(26)。
2.根据权利要求1的光纤，其特征在于所述半导体材料的量子点(32)分布在单模纤芯(24)中。
3.根据权利要求1的光纤，其特征在于所述掺杂剂(30)分布在单模纤芯(24)中。
4.根据权利要求1的光纤，其特征在于所述半导体材料的量子点(32)分布在单模纤芯(24)周围的环(34)中。
5.根据权利要求1的放大光纤，其特征在于所述掺杂剂(30)分布在单模纤芯(24)周围的环(34)中。
6.根据权利要求1的放大光纤，其特征在于所述半导体材料至少包括Si、Ge、PbTe、PbS材料之一。
7.根据权利要求1的放大光纤，其特征在于所述掺杂剂为稀土。
8.一种光纤放大器，包括：
-放大光纤，其包括含有掺杂剂(30)的纤芯(22)，以及包层(28)，其中所述纤芯(22)包括：用于传播光信号的单模纤芯(24)，半导体材料的量子点(32)分布在所述单模纤芯(24)中或所述单模纤芯(24)附近，以及环绕所述单模纤芯(24)的用于接收泵浦信号的多模纤芯(26)；
-一个光泵浦源(10)；以及
-用于将光泵浦信号注入所述放大光纤的多模纤芯(26)的装置。
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CN101764340B (zh) * 2009-12-25 2011-11-30 北京交通大学 强耦合多模掺稀土环芯超亮度单模光纤激光器
WO2015157980A1 (zh) * 2014-04-17 2015-10-22 华为技术有限公司 一种光波导和印刷电路板
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US20100020388A1 (en) 2010-01-28
EP1783872A1 (fr) 2007-05-09
US20070127877A1 (en) 2007-06-07
US7869686B2 (en) 2011-01-11
FR2896315A1 (fr) 2007-07-20
CN100498391C (zh) 2009-06-10
US7813614B2 (en) 2010-10-12

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