CN1956227A - Back radiating gallium nitride base Schottky structure UV detector - Google Patents
Back radiating gallium nitride base Schottky structure UV detector Download PDFInfo
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- CN1956227A CN1956227A CN 200510118017 CN200510118017A CN1956227A CN 1956227 A CN1956227 A CN 1956227A CN 200510118017 CN200510118017 CN 200510118017 CN 200510118017 A CN200510118017 A CN 200510118017A CN 1956227 A CN1956227 A CN 1956227A
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- layer
- ohmic contact
- gallium nitride
- contact layer
- nitride base
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Abstract
An ultraviolet detector of back-light gallium nitride Schottky structure consists of a substrate, a nucleating layer grown on substrate, an ohm contact layer grown on nucleating layer, an active layer grown on ohm contact layer, an ohm electrode prepared on ohm contact layer and a Schottky electrode prepared on active layer.
Description
Technical field
The invention belongs to field of semiconductor devices, be meant a kind of back radiating gallium nitride base Schottky structure UV detector especially.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) have huge using value with its spectral region wide (having covered from ultraviolet to infrared all band) in the optoelectronics field.The GaN ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in guided missile alarm, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, fire monitoring etc. has important use to be worth.Compare with the Si ultraviolet detector, the GaN base ultraviolet detector because have that visible light is blind, quantum efficiency is high, the incomparable advantage of can under high temperature and causticity environment, working or the like, can accomplish that in actual applications false alarm rate is low, highly sensitive, antijamming capability is strong, be subjected to people's attention greatly.
At present, developed the GaN ultraviolet detector of multiple structures such as metal-semiconductor-metal (MSM) structure, Schottky junction structure, pin structure in the world, Schottky junction structure is because the problem of having avoided p type GaN has been subjected to people's attention.But owing to existing (in general of surface state, surface density of states is much larger than interface state density), photo-generated carrier is easy in the schottky junction surface recombination, thereby reduced the quantum efficiency of device, in addition, also some absorbs transparent Schottky electrode to incident light, has reduced the quantum efficiency of device, has hindered the practical application of device and further develops.
Summary of the invention
The objective of the invention is to, a kind of back radiating gallium nitride base Schottky structure UV detector has been proposed, this structure can not only reduce the surface state influence compound to photo-generated carrier in the conventional Schottky junction structure, and avoided transparency electrode, thereby can further improve the quantum efficiency of detector to absorption of incident light.
A kind of back radiating gallium nitride base Schottky structure UV detector of the present invention is characterized in that, comprising:
One substrate;
One nucleating layer, this nucleating layer is grown on the substrate;
One ohmic contact layer, this ohmic contact layer is grown on the nucleating layer;
One active layer, this active layer is grown on the ohmic contact layer, and the area of this active layer is positioned at a side or centre above the ohmic contact layer less than the area of ohmic contact layer;
One Ohmic electrode, this Ohmic electrode is produced on the ohmic contact layer, be positioned at opposite side above the ohmic contact layer or active layer around;
One Schottky electrode, this Schottky electrode is produced on the active layer, finishes the making of device.
Wherein substrate is sapphire or aluminium nitride material.
Wherein nucleating layer is the low temperature aln layer.
The ohmic contact layer doped N-type Al-Ga-N material of attaching most importance to wherein, its electron concentration is greater than 1 * 10
18Cm
-3
Wherein active layer is the intrinsic Al-Ga-N material that al composition is lower than ohmic contact layer 12, and its electron concentration is less than 1 * 10
17Cm
-3
Wherein Ohmic electrode is dots structure or loop configuration.
Wherein Schottky electrode is a dots structure.
The present invention proposes a kind of back radiating gallium nitride base Schottky structure UV detector, this structure can not only reduce the surface state influence compound to photo-generated carrier in the conventional Schottky junction structure, and avoided transparency electrode, thereby can further improve the quantum efficiency of detector to absorption of incident light.
Description of drawings
In order to further specify content of the present invention, below in conjunction with example and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the material structure schematic diagram of back radiating gallium nitride base Schottky structure UV detector among the present invention;
Fig. 2 is the device architecture schematic diagram of back radiating gallium nitride base Schottky structure UV detector among the present invention;
Embodiment
See also Figure 1 and Figure 2, a kind of back radiating gallium nitride base Schottky structure UV detector of the present invention is characterized in that, comprising:
One substrate 10, this substrate 10 is sapphire or aluminium nitride material;
One nucleating layer 11, this nucleating layer 11 is grown on the substrate 10, and this nucleating layer 11 is the low temperature aln layer;
One ohmic contact layer 12, this ohmic contact layer 12 is grown on the nucleating layer 11, this ohmic contact layer 12 doped N-type Al-Ga-N material of attaching most importance to, its electron concentration is greater than 1 * 10
18Cm
-3
One active layer 13, this active layer 13 is grown on the ohmic contact layer 12, the area of this active layer 13 is less than the area of ohmic contact layer 12, be positioned at a side or centre above the ohmic contact layer 12, this active layer 13 is lower than the intrinsic Al-Ga-N material of ohmic contact layer 12 for al composition, and its electron concentration is less than 1 * 10
17Cm
-3
One Ohmic electrode 20, this Ohmic electrode 20 is produced on the ohmic contact layer 12, be positioned at opposite side above the ohmic contact layer 12 or active layer 13 around, this Ohmic electrode 20 is dots structure or loop configuration;
One Schottky electrode 21, this Schottky electrode 21 is produced on the active layer 13, and this Schottky electrode 21 is a dots structure, finishes the making of device.
Above-described is material structure schematic diagrames for back radiating gallium nitride base Schottky structure UV detector shown in Figure 1 from substrate 10, nucleating layer 11, ohmic contact layer 12 to active layer 13, and Fig. 2 is the device architecture that utilizes the back radiating gallium nitride base Schottky structure UV detector that this material structure makes.
Please shown in Figure 2 in conjunction with consulting, the device preparation process of the back radiating gallium nitride base Schottky structure UV detector that the present invention proposes is: at sapphire or aluminium nitride material is substrate 10, utilize the equipment of MOCVD, MBE or other growth GaN materials to grow device architecture, this structure comprises aln nucleation layer 11, N
+-Al
xGa
1-xThe active area N that N ohmic contact layer 12 and al composition are lower
-Al
yGa
1-yN layer 13 (0≤y＜x≤1 here).Carve ledge structure with methods such as dry etchings, expose N
+-Al
xGa
1-xThe N layer.Successively make Schottky contacts 20, ohmic contact 21 with methods such as photoetching, plated films then, wherein, need thermal annealing to improve the Schottky contacts characteristic.Carry out attenuate at last again, cut apart, pressure welding, encapsulation (wherein substrate back is an incidence surface), make the ultraviolet detector device.
Please shown in Figure 2 again in conjunction with consulting, in order to further specify the effect of this device architecture, we are that the GaN Schottky ultraviolet detector of 365nm is the preparation process that example illustrates this device architecture with the response cut-off wavelength, specific as follows: utilizing MOCVD equipment is that substrate 10 grows device architecture with the sapphire, and this structure comprises low temperature AI N nucleating layer 11, N
+-Al
0.1Ga
0.9(thickness is that 1 μ m, electron concentration are 3 * 10 to N ohmic contact layer 12
18Cm
-3), active area N
-(thickness is that 0.2 μ m, electron concentration are 5 * 10 to-GaN layer 12
16Cm
-3).Die-size is 300 μ m * 300 μ m.Carve ledge structure with methods such as dry etchings, reveal N
+-Al
0.1Ga
0.9The N layer.Successively make Schottky contacts (Ni/Au electrode, wherein Ni, Au thickness are respectively 3nm, 5nm), ohmic contact (Ti/Al electrode) with methods such as photoetching, plated films then, wherein, need improve the Schottky contacts characteristic in 5 minutes 500 ℃ of annealing.Carry out attenuate, cutting, pressure welding at last again, be packaged into the ultraviolet detector device example (wherein substrate back is a photosurface).
The device architecture that the present invention proposes has very big difference with the Schottky junction structure of routine, in device architecture, and the N of one deck high aluminium component of growing earlier
+-Al
xGa
1-xThe N layer, al composition low slightly N then grows
--Al
yGa
1-yN layer (i.e. 0≤y＜x≤1), ultraviolet light is from substrate back incident.When photon energy at N
--Al
yGa
1-yWhen near the incident illumination the energy gap of N material is mapped on the device, can be through the N below the active area
+-Al
xGa
1-xThe N layer is by active area N
--Al
yGa
1-yThe N material layer absorbs, and a large amount of photons is by close N
+-Al
xGa
1-xN/N
--Al
yGa
1-yThe N at N interface
--Al
yGa
1-yThe n-quadrant absorbs, and near N
--Al
yGa
1-yThe number of photons of N laminar surface seldom, so most of photo-generated carrier mainly is subjected to Al
yGa
1-yN/N
--Al
xGa
1-xThe influence that interfacial state between the N boundary layer is compound, in general, interface state density is far below surface density of states, and incident light yet can just not shine the transparency electrode that Schottky mechanism adopted and absorb the loss that is caused by common, and the external quantum efficiency of device is improved like this.
Claims (7)
1, a kind of back radiating gallium nitride base Schottky structure UV detector is characterized in that, comprising:
One substrate;
One nucleating layer, this nucleating layer is grown on the substrate;
One ohmic contact layer, this ohmic contact layer is grown on the nucleating layer;
One active layer, this active layer is grown on the ohmic contact layer, and the area of this active layer is positioned at a side or centre above the ohmic contact layer less than the area of ohmic contact layer;
One Ohmic electrode, this Ohmic electrode is produced on the ohmic contact layer, be positioned at opposite side above the ohmic contact layer or active layer around;
One Schottky electrode, this Schottky electrode is produced on the active layer, finishes the making of device.
2, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, wherein substrate is sapphire or aluminium nitride material.
3, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, wherein nucleating layer is the low temperature aln layer.
4, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, the ohmic contact layer doped N-type Al-Ga-N material of attaching most importance to wherein, and its electron concentration is greater than 1 * 10
18Cm
-3
5, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, wherein active layer is the intrinsic Al-Ga-N material that al composition is lower than ohmic contact layer 12, and its electron concentration is less than 1 * 10
17Cm
-3
6, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, wherein Ohmic electrode is dots structure or loop configuration.
7, back radiating gallium nitride base Schottky structure UV detector according to claim 1 is characterized in that, wherein Schottky electrode is a dots structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510118017 CN1956227A (en) | 2005-10-24 | 2005-10-24 | Back radiating gallium nitride base Schottky structure UV detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510118017 CN1956227A (en) | 2005-10-24 | 2005-10-24 | Back radiating gallium nitride base Schottky structure UV detector |
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| Publication Number | Publication Date |
|---|---|
| CN1956227A true CN1956227A (en) | 2007-05-02 |
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ID=38063415
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510118017 Pending CN1956227A (en) | 2005-10-24 | 2005-10-24 | Back radiating gallium nitride base Schottky structure UV detector |
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| Country | Link |
|---|---|
| CN (1) | CN1956227A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
| CN112164732A (en) * | 2020-09-15 | 2021-01-01 | 五邑大学 | Ultraviolet photodiode and preparation method thereof |
-
2005
- 2005-10-24 CN CN 200510118017 patent/CN1956227A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
| CN112164732A (en) * | 2020-09-15 | 2021-01-01 | 五邑大学 | Ultraviolet photodiode and preparation method thereof |
| CN112164732B (en) * | 2020-09-15 | 2022-04-05 | 五邑大学 | Ultraviolet photodiode and preparation method thereof |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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