CN1956131A - Flat display of concave grid array structure and its manufacturing process - Google Patents
Flat display of concave grid array structure and its manufacturing process Download PDFInfo
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- CN1956131A CN1956131A CN 200610107311 CN200610107311A CN1956131A CN 1956131 A CN1956131 A CN 1956131A CN 200610107311 CN200610107311 CN 200610107311 CN 200610107311 A CN200610107311 A CN 200610107311A CN 1956131 A CN1956131 A CN 1956131A
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Abstract
A flat display with array structure in concave grid form is prepared as forming sealed vacuum cavity by cathode glass panel and anode glass panel as well as peripheral glass frame, setting cathode electrode layer and carbon nanotube as well as array structure in concave grid form on cathode glass panel, arranging anode conductive layer and fluorescent powder layer formed at said conductive layer on anode glass panel, setting support wall structure and degassing agent auxiliary element between two said glass panel.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of concave grid array structure and manufacture craft thereof.
Background technology
Carbon nano-tube is a kind of splendid Field Emission Cathode Materials, has high aspect rate, and unique geometric shape and excellent electric conductivity have caused showing great attention to of numerous scientific research personnel already, and carried out extensive studies.Carbon nano-tube has good field emission characteristics, has great application potential aspect the field emission display device, can be used for making field-emitter display of new generation.This novel plane field emissive display has characteristics such as high definition, high brightness and high-resolution, and it is used more and more widely, has become the hot issue in flat panel display field.
In order to reduce the total device cost, so that interrelate with conventional drive circuit, the field emission display device of making three-stage structure has become a kind of inevitable choice.Wherein, grid structure is the crucial control element in the three-stage structure display device, and it is determining that carbon nano-tube whether can emitting electrons, also is one of important performance indexes of estimating display device.The control model of field-emitter display is varied, have nothing in common with each other, the field emission performance difference that field-emitter display showed of different control models is very big, also exist control action remarkable inadequately, grid current is excessive, display brightness is lower, a series of problems of emitting performance instability or the like.The control model of the field-emitter display of each structure all has its superior part and disadvantage, all can't dominate, and therefore also need numerous scientific research personnel to drop into a large amount of time and efforts and carry out unremitting effort and research.In the manufacturing process of practical devices, how various favorable factors are effectively utilized, adopt which kind of structure and control model, carry out high-quality flat-panel display device and make, this should be the direction that researchers make great efforts.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the element manufacturing and the manufacture craft thereof of the flat-panel monitor of concave grid array structure simple in structure.
The object of the present invention is achieved like this, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; On the anode glass panel, have anode conductive layer, preparation on anode conductive layer phosphor powder layer and at the insulation paste layer of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have negative electrode layer, carbon nano-tube and concave grid array structure on cathode glass faceplate.
The backing material of described concave grid array structure is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the negative electrode protuberance layer; The negative electrode protuberance layer is the tetragonal body shape, promptly sees it is a positive square shape from the angle of overlooking, and sees it is a rectangle shape from the angle of side-looking, but highly is less than the length of side length of positive square; The catercorner length of positive square shape is less than the diameter in electron channel hole in the negative electrode protuberance layer; Metal level after the lip-deep etching of negative electrode protuberance layer forms negative electrode layer; Negative electrode layer is not the whole surface that is covered with the negative electrode protuberance layer, and negative electrode layer is covered with four sides of negative electrode protuberance layer respectively, and is distributed in the surrounding edge position of end face on the negative electrode protuberance layer, present a kind of cubic annular shape; Being distributed in four sides of negative electrode protuberance layer and the negative electrode layer of the cubic annular shape on the last end face all is interconnected; Silicon dioxide layer on the negative electrode protuberance layer after the etching of end face forms cathode coating; Cathode coating is not the last end face that is covered with whole negative electrode protuberance layer, but has covered the negative electrode protuberance layer at all the other positions except negative electrode layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms grid and increases layer; Grid increases and has the electron channel hole in the layer, exposes the negative electrode protuberance layer and the negative electrode layer of bottom; The electron channel hole is round shape, and its medial surface also is the cylindrical shape that presents perpendicular to cathode glass faceplate; The height that grid increases layer will be higher than the height of negative electrode protuberance layer; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer major part all be positioned at grid increase layer above, but its fore-end extends to the electron channel hole is inboard, it is bent downwardly foremost and increases the inside sidewalls depression of layer to grid, presents arcuate shape; Silicon dioxide layer after the etching above the grid lead layer forms insulating cover; Insulating cover will cover most grid lead layer, is positioned at the grid lead layer that grid increases layer madial wall upper part but can not cover; Made of carbon nanotubes is on negative electrode layer.
The fixed position of described concave grid array structure is for being fixed on the cathode glass faceplate; The cathode leg layer is metal gold, silver, aluminium, molybdenum, chromium, tin, indium; The doping type of negative electrode protuberance layer is n type, p type; Negative electrode layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer is metal gold, silver, aluminium, chromium, molybdenum.
A kind of manufacture craft of flat-panel monitor of concave grid array structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare a metal level, form the cathode leg layer after the etching;
3) making of negative electrode protuberance layer: on the cathode leg layer, prepare a doped polysilicon layer, form the negative electrode protuberance layer after the etching;
4) making of negative electrode layer: on the surface of negative electrode layer, prepare a metal level, form negative electrode layer after the etching;
5) making of cathode coating: on end face on the negative electrode protuberance layer, prepare a silicon dioxide layer, form cathode coating after the etching;
6) grid increases the making of layer: prepare a silicon dioxide layer on cathode glass faceplate, form grid after the etching and increase layer;
7) making of grid lead layer: on grid increases layer, prepare a metal level, form the grid lead layer after the etching;
8) making of insulating cover: on the grid lead layer, prepare a silicon dioxide layer, form insulating cover after the etching;
9) cleaning surfaces of concave grid array structure is handled: clean is carried out on the surface to concave grid array structure, removes impurity and dust;
10) preparation of carbon nano-tube: with made of carbon nanotubes on negative electrode layer;
11) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described concave grid array structure, the grid lead layer has been made into extended forward and add arcuate shape to the straight line that grid increases layer inner recess, like this, can apply suitable voltage simultaneously from the top and the side of carbon nanotube cathod, avoided the appearance of short circuit phenomenon between grid structure and the carbon nanotube cathod structure, further improve the electronic transmitting efficiency of carbon nanotube cathod, can when grid and cathode construction height are integrated together, further reduce operating voltage of grid structure;
Secondly, in described concave grid array structure, the negative electrode protuberance layer has been made into cubic build shape, and the shape of negative electrode layer has been done change, at last with made of carbon nanotubes on negative electrode layer.Like this, both can greatly increase the electron emission area of carbon nanotube cathod, also changed simultaneously the curvature of carbon nanotube cathod shape, help further strengthening the electric field strength on top, carbon nanotube cathod surface, force it to launch more electronics, help improving the image quality of integral device.
In addition, in described concave grid array structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of concave grid array structure;
Fig. 2 has provided the transversary schematic diagram of concave grid array structure;
Fig. 3 has provided and has had structural representation concave grid array structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has concave grid array structure, comprise by cathode glass faceplate [1], anode glass panel [10] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; On the anode glass panel, have anode conductive layer [11], preparation on anode conductive layer phosphor powder layer [13] and at the insulation paste layer [12] of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate [14] and getter subsidiary component [16] have negative electrode layer [4], carbon nano-tube [9] and concave grid array structure on cathode glass faceplate.
Described concave grid array structure comprises that cathode glass faceplate [1], cathode leg layer [2], negative electrode protuberance layer [3], negative electrode layer [4], cathode coating [5], grid increase layer [6], grid lead layer [7], insulating cover [8] and carbon nano-tube [9] part.
The backing material of described concave grid array structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the negative electrode protuberance layer; The negative electrode protuberance layer is the tetragonal body shape, promptly sees it is a positive square shape from the angle of overlooking, and sees it is a rectangle shape from the angle of side-looking, but highly is less than the length of side length of positive square; The catercorner length of positive square shape is less than the diameter in electron channel hole in the negative electrode protuberance layer; Metal level after the lip-deep etching of negative electrode protuberance layer forms negative electrode layer; Negative electrode layer is not the whole surface that is covered with the negative electrode protuberance layer, and negative electrode layer is covered with four sides of negative electrode protuberance layer respectively, and is distributed in the surrounding edge position of end face on the negative electrode protuberance layer, present a kind of cubic annular shape; Being distributed in four sides of negative electrode protuberance layer and the negative electrode layer of the cubic annular shape on the last end face all is interconnected; Silicon dioxide layer on the negative electrode protuberance layer after the etching of end face forms cathode coating; Cathode coating is not the last end face that is covered with whole negative electrode protuberance layer, but has covered the negative electrode protuberance layer at all the other positions except negative electrode layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms grid and increases layer; Grid increases and has the electron channel hole in the layer, exposes the negative electrode protuberance layer and the negative electrode layer of bottom; The electron channel hole is round shape, and its medial surface also is the cylindrical shape that presents perpendicular to cathode glass faceplate; The height that grid increases layer will be higher than the height of negative electrode protuberance layer; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer major part all be positioned at grid increase layer above, but its fore-end extends to the electron channel hole is inboard, it is bent downwardly foremost and increases the inside sidewalls depression of layer to grid, presents arcuate shape; Silicon dioxide layer after the etching above the grid lead layer forms insulating cover; Insulating cover will cover most grid lead layer, is positioned at the grid lead layer that grid increases layer madial wall upper part but can not cover; Made of carbon nanotubes is on negative electrode layer.
The fixed position of described concave grid array structure is for being fixed on the cathode glass faceplate; The cathode leg layer can be metallic gold, silver, aluminium, molybdenum, chromium, tin, indium; The doping type of negative electrode protuberance layer can be the n type, also can be the p type; Negative electrode layer can be metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer can be metallic gold, silver, aluminium, chromium, molybdenum.
A kind of manufacture craft that has the flat-panel monitor of concave grid array structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer [2]: on cathode glass faceplate, prepare a metallic chromium layer, form the cathode leg layer after the etching;
3) making of negative electrode protuberance layer [3]: on the cathode leg layer, prepare a n type doped polysilicon layer, form the negative electrode protuberance layer after the etching;
4) making of negative electrode layer [4]: on the surface of negative electrode layer, prepare a metal nickel dam, form negative electrode layer after the etching;
5) making of cathode coating [5]: on end face on the negative electrode protuberance layer, prepare a silicon dioxide layer, form cathode coating after the etching;
6) grid increases the making of layer [6]: prepare a silicon dioxide layer on cathode glass faceplate, form grid after the etching and increase layer;
7) making of grid lead layer [7]: on grid increases layer, prepare a metallic chromium layer, form the grid lead layer after the etching;
8) making of insulating cover [8]: on the grid lead layer, prepare a silicon dioxide layer, form insulating cover after the etching;
9) cleaning surfaces of concave grid array structure is handled: clean is carried out on the surface to concave grid array structure, removes impurity and dust;
10) preparation of carbon nano-tube [9]: with made of carbon nanotubes on negative electrode layer;
11) making of anode glass panel [10]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer [11]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer [12]: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer [13]: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [14] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 13 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 14 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (7)
1, a kind of flat-panel monitor of concave grid array structure, comprise by cathode glass faceplate [1], anode glass panel [10] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; On the anode glass panel, have anode conductive layer [11], preparation on anode conductive layer phosphor powder layer [13] and at the insulation paste layer [12] of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate [14] and getter subsidiary component [16] is characterized in that: negative electrode layer [4], carbon nano-tube [9] and concave grid array structure are arranged on cathode glass faceplate.
2, the flat-panel monitor of a kind of concave grid array structure according to claim 1 is characterized in that: the backing material of described concave grid array structure is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the negative electrode protuberance layer; The negative electrode protuberance layer is the tetragonal body shape, promptly sees it is a positive square shape from the angle of overlooking, and sees it is a rectangle shape from the angle of side-looking, but highly is less than the length of side length of positive square; The catercorner length of positive square shape is less than the diameter in electron channel hole in the negative electrode protuberance layer; Metal level after the lip-deep etching of negative electrode protuberance layer forms negative electrode layer; Negative electrode layer is not the whole surface that is covered with the negative electrode protuberance layer, and negative electrode layer is covered with four sides of negative electrode protuberance layer respectively, and is distributed in the surrounding edge position of end face on the negative electrode protuberance layer, present a kind of cubic annular shape; Being distributed in four sides of negative electrode protuberance layer and the negative electrode layer of the cubic annular shape on the last end face all is interconnected; Silicon dioxide layer on the negative electrode protuberance layer after the etching of end face forms cathode coating; Cathode coating is not the last end face that is covered with whole negative electrode protuberance layer, but has covered the negative electrode protuberance layer at all the other positions except negative electrode layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms grid and increases layer; Grid increases and has the electron channel hole in the layer, exposes the negative electrode protuberance layer and the negative electrode layer of bottom; The electron channel hole is round shape, and its medial surface also is the cylindrical shape that presents perpendicular to cathode glass faceplate; The height that grid increases layer will be higher than the height of negative electrode protuberance layer; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer major part all be positioned at grid increase layer above, but its fore-end extends to the electron channel hole is inboard, it is bent downwardly foremost and increases the inside sidewalls depression of layer to grid, presents arcuate shape; Silicon dioxide layer after the etching above the grid lead layer forms insulating cover; Insulating cover will cover most grid lead layer, is positioned at the grid lead layer that grid increases layer madial wall upper part but can not cover; Made of carbon nanotubes is on negative electrode layer.
3, the flat-panel monitor of concave grid array structure according to claim 2 is characterized in that: the fixed position of described concave grid array structure is for being fixed on the cathode glass faceplate; The cathode leg layer is metal gold, silver, aluminium, molybdenum, chromium, tin, indium; The doping type of negative electrode protuberance layer is n type, p type; Negative electrode layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer is metal gold, silver, aluminium, chromium, molybdenum.
4, a kind of manufacture craft of flat-panel monitor of concave grid array structure is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer [2]: on cathode glass faceplate, prepare a metal level, form the cathode leg layer after the etching;
3) making of negative electrode protuberance layer [3]: on the cathode leg layer, prepare a doped polysilicon layer, form the negative electrode protuberance layer after the etching;
4) making of negative electrode layer [4]: on the surface of negative electrode layer, prepare a metal level, form negative electrode layer after the etching;
5) making of cathode coating [5]: on end face on the negative electrode protuberance layer, prepare a silicon dioxide layer, form cathode coating after the etching;
6) grid increases the making of layer [6]: prepare a silicon dioxide layer on cathode glass faceplate, form grid after the etching and increase layer;
7) making of grid lead layer [7]: on grid increases layer, prepare a metal level, form the grid lead layer after the etching;
8) making of insulating cover [8]: on the grid lead layer, prepare a silicon dioxide layer, form insulating cover after the etching;
9) cleaning surfaces of concave grid array structure is handled: clean is carried out on the surface to concave grid array structure, removes impurity and dust;
10) preparation of carbon nano-tube [9]: with made of carbon nanotubes on negative electrode layer;
11) making of anode glass panel [10]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer [11]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer [12]: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer [13]: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [14] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
5, the manufacture craft of the flat-panel monitor of concave grid array structure according to claim 4 is characterized in that: described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of concave grid array structure according to claim 4 is characterized in that: described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
7, the manufacture craft of the flat-panel monitor of concave grid array structure according to claim 4 is characterized in that: the device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CN200610107311A CN1956131B (en) | 2006-10-17 | 2006-10-17 | Flat display of concave grid array structure and its manufacturing process |
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| CN200610107311A CN1956131B (en) | 2006-10-17 | 2006-10-17 | Flat display of concave grid array structure and its manufacturing process |
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| CN1956131B CN1956131B (en) | 2010-05-26 |
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| US6617798B2 (en) * | 2000-03-23 | 2003-09-09 | Samsung Sdi Co., Ltd. | Flat panel display device having planar field emission source |
| CN1700389B (en) * | 2005-03-30 | 2010-05-26 | 中原工学院 | Process for making tripolar carbon nanotube field emission display having self-aligning technique |
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