CN1909151A - Multiple round annular cathode array emitting structural panel display device and its production technique - Google Patents
Multiple round annular cathode array emitting structural panel display device and its production technique Download PDFInfo
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- CN1909151A CN1909151A CN 200610048504 CN200610048504A CN1909151A CN 1909151 A CN1909151 A CN 1909151A CN 200610048504 CN200610048504 CN 200610048504 CN 200610048504 A CN200610048504 A CN 200610048504A CN 1909151 A CN1909151 A CN 1909151A
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Abstract
The invention relates to a plate display in multi-annular cathode array emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and multi-annular cathode array emission structure are arranged on the cathode glass panel. The invention can effectively strengthen the electron emission control function of grid, to increase the emission area of cathode of carbon nanometer tube, and improve the control efficiency of grid, to improve the brightness, with lower cost and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to a kind of flat-panel monitor and manufacture craft thereof of multiple round annular cathode array emitting structural.
Background technology
Flat-panel display device is a kind of crucial man-machine communication's instrument, is applied in the middle of all trades and professions widely.Wherein, the field emission display device that utilizes carbon nano-tube to make as cathode material then is in recent years emerging a kind of planar device, have plurality of advantages such as high definition, high image quality, high-resolution and high brightness, become the direction of Display Technique development.In the middle of the field emission display device of three-stage structure, emission plays very necessary control effect to grid structure for the electronics of carbon nanotube cathod, therefore, and for the manufacture craft of grid, make all many-sides such as structure very strict specification requirement is all arranged.
When after applying appropriate voltage on the grid, will form powerful electric field strength on the surface of carbon nanotube cathod, force carbon nano-tube to launch a large amount of electronics, field emission phenomenon just.But, in the process of carbon nanotube cathod emitting electrons, not all carbon nanotube cathod can both be uniform and stable emitting electrons, but the marginal position electrons emitted that is positioned at carbon nanotube cathod is maximum, the middle position electrons emitted that is positioned at carbon nanotube cathod is more less, perhaps emitting electrons not.So, if the cathode shape of carbon nano-tube is improved, can make full use of marginal position like this and launch a large amount of electronics phenomenons, can also increase the emission area of carbon nanotube cathod simultaneously effectively, this is a problem being badly in need of solution.In addition, present most of flat-panel display devices have all selected grid to be positioned at the version of carbon nanotube cathod top, and its manufacture craft is fairly simple, but formed grid current is bigger.So how the manufacture craft of grid structure is improved, enabled both to have strengthened effectively control action, can also reduce device cost simultaneously, help carrying out large-area manufacturing, this also is the problem that need contemplate.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of whole flat-panel display device; When can carrying out the making of large area display spare, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, multiple round annular cathode array simple in structure, the flat-panel monitor of emitting structural and manufacture craft thereof.
The object of the present invention is achieved like this: comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component.Control grid, carbon nanotube cathod and multiple round annular cathode array emitting structural are arranged on cathode glass faceplate.
The backing material of described multiple round annular cathode array emitting structural is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the grid lead layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms blocking layer; Blocking layer after the etching will expose the grid lead layer of bottom; Metal level after the etching on the blocking layer forms the cathode leg layer; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement; Silicon dioxide layer after the etching on the blocking layer forms separator; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer; Doped polysilicon layer after the etching on the grid lead layer forms grid conducting layer; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities; Silicon dioxide layer after the etching on grid conducting layer surface forms the grid cover layer, and grid conducting layer and grid lead layer are all covered; Doped polysilicon layer after the etching above the cathode leg layer is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical; Metal level after the etching of the top tip portion of inboard cathode conductive layer and outside cathode conductive layer forms catalyst layer; Can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described multiple round annular cathode array emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode be integrated together, and grid can controlled the electronics emission of a plurality of circular carbon nanotube cathods simultaneously.The grid lead layer can be metallic gold, silver, tin, aluminium, chromium, molybdenum.The cathode leg layer can be metallic gold, silver, tin, aluminium, molybdenum, chromium.The doping type of grid conducting layer can be the p type, also can be the n type.The doping type of outside cathode conductive layer and inboard cathode conductive layer can be the p type, also can be the n type.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of multiple round annular cathode array emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer: on cathode glass faceplate, prepare a metal level, form the grid lead layer after the etching;
3) making of blocking layer: on cathode glass faceplate, prepare a silicon dioxide layer, form blocking layer after the etching; Blocking layer after the etching will expose the grid lead layer of bottom;
4) making of cathode leg layer: on blocking layer, prepare a metal level, form the cathode leg layer after the etching; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement;
5) making of separator: on blocking layer, prepare a silicon dioxide layer, form separator after the etching; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer;
6) making of grid conducting layer: on the grid lead layer, prepare a n type doped polysilicon layer, form grid conducting layer after the etching;
7) the tectal making of grid: the surface preparation at grid conducting layer goes out a silicon dioxide layer, forms the grid cover layer after the etching, and grid conducting layer and grid lead layer are all covered;
8) making of inboard cathode conductive layer and outside cathode conductive layer: prepare a n type doped polysilicon layer on the cathode leg layer, the doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer;
9) making of catalyst layer: prepare a metal nickel dam at the top tip portion of inboard cathode conductive layer and outside cathode conductive layer, form catalyst layer after the etching;
10) cleaning surfaces of multiple round annular cathode array emitting structural is handled: clean is carried out on the surface to multiple round annular cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube: utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point; Around face glass, smeared glass powder with low melting point, fixed with clip;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 6 is specially prepares a n type doped polysilicon layer on the grid lead layer, form grid conducting layer after the etching; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities;
Described step 8 is specially prepares a n type doped polysilicon layer on the cathode leg layer, the doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical;
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described multiple round annular cathode array emitting structural, on cathode glass faceplate, made blocking layer, like this, can stop that first impurity in the cathode glass faceplate is to the influence of multiple round annular cathode array emitting structural, second grid lead layer and cathode leg layer can be kept apart mutually, avoid the appearance of short circuit phenomenon between the two, also provide convenience for wiring;
Secondly, in described multiple round annular cathode array emitting structural, made the grid cover layer on the surface of grid conducting layer, so both can avoid of the influence of other impurity to grid conducting layer, also favourable gets up gate protection, prevents the appearance of grid and carbon nanotube cathod short circuit phenomenon between the two;
The 3rd, in described multiple round annular cathode array emitting structural,, will form powerful electric field strength on the top of carbon nano-tube when after applying appropriate voltage on the grid, force carbon nano-tube to launch a large amount of electronics.On the one hand, because in multiple round annular cathode array emitting structural, carbon nanotube cathod is in inboard negative electrode respectively and increases the top that layer and outside negative electrode increase layer, it is pointed to present triangle, this has just further strengthened the electric field strength on carbon nano-tube top, thereby can reduce the operating voltage of device effectively; On the other hand, because in multiple round annular cathode array emitting structural, outside negative electrode increase carbon nanotube cathod that layer and inboard negative electrode increase layer top all present a kind of circular be looped around grid conducting layer around, so just both increased the field emission area of carbon nano-tube, also made full use of the phenomenon that marginal position is launched a large amount of electronics simultaneously, strengthen the electronics emission control effect of grid, improve the control efficiency of grid, help further improving the display brightness of integral device;
In addition, in described multiple round annular cathode array emitting structural, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of multiple round annular cathode array emitting structural;
Fig. 2 has provided the transversary schematic diagram of multiple round annular cathode array emitting structural;
Fig. 3 has provided and has had structural representation multiple round annular cathode array emitting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has multiple round annular cathode array emitting structural, comprise by cathode glass faceplate 1, anode glass panel 12 and all around glass enclose the sealed vacuum chamber that frame 17 is constituted; Anode conductive layer 13 and the phosphor powder layer 15 of preparation on anode conductive layer are arranged on the anode glass panel; Control grid 6, carbon nano-tube 11 negative electrodes and multiple round annular cathode array emitting structural are arranged on cathode glass faceplate; Knee wall 16 structures between anode glass panel and cathode glass faceplate and getter 18 subsidiary components.
Described multiple round annular cathode array emitting structural comprises cathode glass faceplate 1, grid lead layer 2, blocking layer 3, cathode leg layer 4, separator 5, grid conducting layer 6, grid cover layer 7, inboard cathode conductive layer 8, outside cathode conductive layer 9, catalyst layer 10, carbon nano-tube 11 parts.
The backing material of described multiple round annular cathode array emitting structural is a glass, and just cathode glass faceplate 1; Metal level after the etching on the cathode glass faceplate forms grid lead layer 2; Silicon dioxide layer after the etching on the cathode glass faceplate forms blocking layer 3; Blocking layer after the etching will expose the grid lead layer of bottom; Metal level after the etching on the blocking layer forms cathode leg layer 4; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement; Silicon dioxide layer after the etching on the blocking layer forms separator 5; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer; Doped polysilicon layer after the etching on the grid lead layer forms grid conducting layer 6; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities; Silicon dioxide layer after the etching on grid conducting layer surface forms grid cover layer 7, and grid conducting layer and grid lead layer are all covered; Doped polysilicon layer after the etching above the cathode leg layer is divided into two parts, i.e. outside cathode conductive layer 9 and inboard cathode conductive layer 8; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical; Metal level after the etching of the top tip portion of inboard cathode conductive layer and outside cathode conductive layer forms catalyst layer 10; Utilize catalyst layer to carry out the preparation of carbon nano-tube 11.
The fixed position of described multiple round annular cathode array emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode are integrated together, grid can controlled the electronics emission of a plurality of circular carbon nanotube cathods simultaneously, the grid lead layer is metal gold, silver, tin, aluminium, chromium, molybdenum, the cathode leg layer is metal gold, silver, tin, aluminium, molybdenum, chromium, the doping type of grid conducting layer is the p type or is the n type, the doping type of outside cathode conductive layer and inboard cathode conductive layer is the p type or is the n type that catalyst layer is metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of multiple round annular cathode array emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer 2: on cathode glass faceplate, prepare a metal level, form the grid lead layer after the etching;
3) making of blocking layer 3: on cathode glass faceplate, prepare a silicon dioxide layer, form blocking layer after the etching; Blocking layer after the etching will expose the grid lead layer of bottom;
4) making of cathode leg layer 4: on blocking layer, prepare a metal level, form the cathode leg layer after the etching; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement;
5) making of separator 5: on blocking layer, prepare a silicon dioxide layer, form separator after the etching; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer;
6) making of grid conducting layer 6: on the grid lead layer, prepare a n type doped polysilicon layer, form grid conducting layer after the etching;
7) making of grid cover layer 7: the surface preparation at grid conducting layer goes out a silicon dioxide layer, forms the grid cover layer after the etching, and grid conducting layer and grid lead layer are all covered;
8) making of inboard cathode conductive layer 8 and outside cathode conductive layer 9: prepare a n type doped polysilicon layer on the cathode leg layer, the doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer;
9) making of catalyst layer 10: prepare a metal nickel dam at the top tip portion of inboard cathode conductive layer and outside cathode conductive layer, form catalyst layer after the etching;
10) cleaning surfaces of multiple round annular cathode array emitting structural is handled: clean is carried out on the surface to multiple round annular cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube 11: utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel 12: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer 13: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer 14: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer 15: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure 16 and all around glass enclose frame 17 and be assembled together, and getter 18 is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 6 is specially prepares a n type doped polysilicon layer on the grid lead layer, form grid conducting layer after the etching; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities.
Described step 8 is specially prepares a n type doped polysilicon layer on the cathode leg layer, the doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical.
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (9)
1, a kind of flat-panel monitor of multiple round annular cathode array emitting structural, comprise by cathode glass faceplate [1], anode glass panel [12] and all around glass enclose the sealed vacuum chamber that frame [17] is constituted; Anode conductive layer [13] and the phosphor powder layer [15] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [16] and getter subsidiary component [18] is characterized in that: control grid [6], carbon nano-tube [11] negative electrode and multiple round annular cathode array emitting structural are arranged on cathode glass faceplate.
2, the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 1 is characterized in that; The backing material of described multiple round annular cathode array emitting structural is a glass, just cathode glass faceplate [1]; Metal level after the etching on the cathode glass faceplate forms grid lead layer [2]; Silicon dioxide layer after the etching on the cathode glass faceplate forms blocking layer [3]; Blocking layer after the etching will expose the grid lead layer of bottom; Metal level after the etching on the blocking layer forms cathode leg layer [4]; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement; Silicon dioxide layer after the etching on the blocking layer forms separator [5]; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer; Doped polysilicon layer after the etching on the grid lead layer forms grid conducting layer [6]; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities; Silicon dioxide layer after the etching on grid conducting layer surface forms grid cover layer [7], and grid conducting layer and grid lead layer are all covered; Doped polysilicon layer after the etching above the cathode leg layer is divided into two parts, i.e. outside cathode conductive layer [9] and inboard cathode conductive layer [8]; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical; Metal level after the etching of the top tip portion of inboard cathode conductive layer and outside cathode conductive layer forms catalyst layer [10]; Utilize catalyst layer to carry out the preparation of carbon nano-tube [11].
3, the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 2, it is characterized in that: the fixed position of described multiple round annular cathode array emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode are integrated together, grid can controlled the electronics emission of a plurality of circular carbon nanotube cathods simultaneously, the grid lead layer is a metallic gold, silver, tin, aluminium, chromium, molybdenum, the cathode leg layer is a metallic gold, silver, tin, aluminium, molybdenum, chromium, the doping type of grid conducting layer is the p type or is the n type, the doping type of outside cathode conductive layer and inboard cathode conductive layer is the p type or is the n type that catalyst layer is a metallic iron, cobalt, nickel.
4, a kind of manufacture craft of flat-panel monitor of multiple round annular cathode array emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer [2]: on cathode glass faceplate, prepare a metal level, form the grid lead layer after the etching;
3) making of blocking layer [3]: on cathode glass faceplate, prepare a silicon dioxide layer, form blocking layer after the etching; Blocking layer after the etching will expose the grid lead layer of bottom;
4) making of cathode leg layer [4]: on blocking layer, prepare a metal level, form the cathode leg layer after the etching; Cathode leg layer and grid lead layer are disconnected mutually, and grid lead layer and cathode leg layer are mutual vertical arrangement;
5) making of separator [5]: on blocking layer, prepare a silicon dioxide layer, form separator after the etching; The centre of the separator after the etching is a circular apertures, need expose the blocking layer of bottom, cathode leg layer and grid lead layer;
6) making of grid conducting layer [6]: on the grid lead layer, prepare a n type doped polysilicon layer, form grid conducting layer after the etching;
7) making of grid cover layer [7]: the surface preparation at grid conducting layer goes out a silicon dioxide layer, forms the grid cover layer after the etching, and grid conducting layer and grid lead layer are all covered;
8) making of inboard cathode conductive layer [8] and outside cathode conductive layer [9]: prepare a n type doped polysilicon layer on the cathode leg layer, the doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer;
9) making of catalyst layer [10]: prepare a metal nickel dam at the top tip portion of inboard cathode conductive layer and outside cathode conductive layer, form catalyst layer after the etching;
10) cleaning surfaces of multiple round annular cathode array emitting structural is handled; Clean is carried out on surface to multiple round annular cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube [11]; Utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel [12]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer [13]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer [14]: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer [15]: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [16] and all around glass enclose frame [17] and be assembled together, and getter [18] is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
5, the manufacture craft of the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 4, it is characterized in that: described step 6 is specially prepares a n type doped polysilicon layer on the grid lead layer, form grid conducting layer after the etching; The bottom of grid conducting layer and grid lead layer contact, and present a T-shape shape, but the lower left quarter of T-shape shape and lower right-most portion all present 1/4th ellipticities.
6, the manufacture craft of the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 4, it is characterized in that: described step 8 is specially and prepares a n type doped polysilicon layer on the cathode leg layer, doped polysilicon layer after the etching is divided into two parts, i.e. outside cathode conductive layer and inboard cathode conductive layer; Inboard cathode conductive layer presents a cam ring shape structure, and promptly longitudinal profile is a triangle, and horizontal section then presents a circular ring, be looped around grid conducting layer around; The height of the top tip portion of inboard cathode conductive layer will be lower than the lateral part height of T-shape grid conducting layer; The bottom and the cathode leg layer of inboard cathode conductive layer contact; The shape of outside cathode conductive layer is identical with the shape of inboard cathode conductive layer, and only the circular ring diameter of outside cathode conductive layer is bigger than the circular diameter of inboard cathode conductive layer; Outside cathode conductive layer is positioned at the periphery of inboard cathode conductive layer; The bottom and the cathode leg layer of outside cathode conductive layer contact, and the lateral part height of the height of its top tip portion and T-shape grid conducting layer is identical.
7, the manufacture craft of the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 4 is characterized in that: described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
8, the manufacture craft of the flat-panel monitor of multiple round annular cathode array emitting structural according to claim 4 is characterized in that: described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
9, a kind of flat-panel monitor that has multiple round annular cathode array emitting structural according to claim 4, it is characterized in that: the device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485046A CN100487848C (en) | 2006-08-02 | 2006-08-02 | Multiple round annular cathode array emitting structural panel display device and its production technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485046A CN100487848C (en) | 2006-08-02 | 2006-08-02 | Multiple round annular cathode array emitting structural panel display device and its production technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1909151A true CN1909151A (en) | 2007-02-07 |
| CN100487848C CN100487848C (en) | 2009-05-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101071744B (en) * | 2007-06-20 | 2010-05-26 | 中原工学院 | Flat-panel display device with ring vertical plane modulated cathode structure and its preparing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101071744B (en) * | 2007-06-20 | 2010-05-26 | 中原工学院 | Flat-panel display device with ring vertical plane modulated cathode structure and its preparing process |
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