CN1790599A - Panel display with integrated triangle tapered grid cathode structure and its making process - Google Patents
Panel display with integrated triangle tapered grid cathode structure and its making process Download PDFInfo
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Abstract
The invention relates to a flat panel display with integrated triangular sharp-cone grid cathode structure, which comprises: a seal vacuum cavity constructed by cathode and anode glass panel and round glass, a fluorescent powder layer on anode electrode layer on anode glass panel, a control grid for nano carbon tube emission, an integrated triangular sharp-cone grid cathode structure under the nano carbon tube cathode to control its electron emission, a support wall structure and air-detrainer accessory. This invention enlarges emission area, uses fully of well field-emission property of nano carbon tube cathode, and has reliable manufacture process with low cost.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, microelectronics science and technology field, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to the manufacture craft that has field emission flat panel display device integrated triangle tapered grid cathode structure, carbon nanotube cathod.
Background technology
Utilizing carbon nano-tube is a kind of novel planar device as the field emission display device of cathode material, also is in recent years to compare popular topic in the flat panel display equipment field both at home and abroad.In the middle of carbon nanotube cathod panel field emission display spare, grid structure is a relatively more crucial element, and it plays the necessary control effect to carbon nanotube cathod.So, how making full use of on the basis that the direct growth legal system is equipped with the good field emission characteristics that carbon nanotube cathod has, control gate electrode structure and carbon nanotube cathod structure are organically combined, thereby promote the Highgrade integration development of integral device, and how to select the grid structure form that is fit to, how to select the gate fabrication process that is fit to, or the like, these all are the realistic problems that needs emphasis to consider.
Carbon nano-tube is a kind of coaxial tubulose material, alive outside effect can be launched a large amount of electronics down, and it has little tip curvature radius, high aspect rate, good field emission characteristics and good physical and chemical stability are a kind of quite outstanding cold cathode emissive materials.At present, the preparation method who is used for carbon nanotube cathod is broadly divided into two classes, that is: direct growth method and grafting.Adopt grafting can carry out large-area carbon nanotube cathod and make, but the launching effect of prepared carbon nanotube cathod is less better.The field emission characteristics of the carbon nanotube cathod of employing direct growth method preparation is better than the field emission characteristics of the carbon nanotube cathod of other implantation method preparation, the density of institute's carbon nanotubes grown is than higher, rete is also thicker, and the influence of essentially no other impurity, have emission current relatively evenly, plurality of advantages such as emission is big, emission current is more stable, this be with the carbon nanotube cathod of grafting preparation can't be comparable.
In addition, in the middle of panel field emission display spare, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel display device that has integrated triangle tapered grid cathode structure and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this:
The flat-panel monitor that has integrated triangle tapered grid cathode structure, comprise by negative electrode panel, anode plate and all around glass enclose sealed vacuum chamber that frame constitutes, phosphor powder layer, supporting wall structure and the getter subsidiary component on anode conductive layer at anode conductive layer that photoetching is arranged on the anode plate and preparation, the negative electrode panel is provided with integrated triangle tapered grid cathode structure, wherein grid is positioned at the below of carbon nanotube cathod, is controlling the electronics emission of carbon nanotube cathod.
The fixed position of described integrated triangle tapered grid cathode structure is for being fixed on the negative electrode panel, on the negative electrode panel, there is a grid conducting layer, doped polysilicon layer of existence on grid conducting layer, being shaped as of doped polysilicon layer is triangle tapered, there is a dielectric isolation layer on the negative electrode panel, dielectric isolation layer after the etching covers triangle tapered doped polysilicon layer and grid conducting layer, cathode conductive layer of the top existence of dielectric isolation layer, the trend of grid conducting layer and cathode conductive layer is orthogonal, there is a catalyst metal layer above the cathode conductive layer, only there is the surface of the cathode conductive layer that is positioned at triangle tapered structure in catalyst metal layer, and preparation has carbon nanotube cathod on cathode conductive layer.
Grid conducting layer on the negative electrode panel of described integrated triangle tapered grid cathode structure is a metal level, is one of metal gold, silver, copper, aluminium, tin, chromium, indium, molybdenum, and the doped polysilicon layer that exists above of grid conducting layer is the n type or is the p type.
Dielectric isolation layer on the negative electrode panel of described integrated triangle tapered grid cathode structure is a silicon dioxide layer, dielectric isolation layer after the etching will cover triangle tapered doped polysilicon layer and grid conducting layer fully, the cathode conductive layer that exists above of dielectric isolation layer is a metal level, is one of metal gold, silver, tin, chromium, molybdenum, aluminium.
The catalyst metal layer that the cathode conductive layer of described integrated triangle tapered grid cathode structure exists above is one of metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of integrated triangle tapered grid cathode structure, its manufacture craft is as follows:
1), the making of negative electrode panel: whole plate glass is carried out scribing, produce the negative electrode panel;
2), the making of grid conducting layer: evaporation last layer metal on the negative electrode panel, in conjunction with conventional photoetching process, metal is carried out etching then, form grid conducting layer;
3), the making of doped polysilicon layer: on grid conducting layer, prepare doped polysilicon layer; In conjunction with conventional photoetching process, doped polysilicon layer is carried out etching; Doped polysilicon layer after the etching be one triangle tapered, be positioned at the grid grid conducting layer above;
4), the making of dielectric isolation layer: on the negative electrode panel, prepare a silicon dioxide layer, carry out etching, form dielectric isolation layer in conjunction with conventional photoetching process; Dielectric isolation layer after the etching covers triangle tapered doped polysilicon layer and grid conducting layer fully;
5), the making of cathode conductive layer: evaporation last layer metal level on dielectric isolation layer, carry out etching in conjunction with conventional photoetching process, form cathode conductive layer; The trend of cathode conductive layer and grid conducting layer is orthogonal;
6), the making of catalyst metal layer: metal level of evaporation once more on cathode conductive layer, in conjunction with conventional photoetching process metal level is carried out etching then, form catalyst metal layer; Only there is the surface of the cathode conductive layer that is positioned at triangle tapered structure in catalyst metal layer after the etching, and the catalyst metal layer of remaining position will be etched away;
7), the growth of carbon nanotube cathod: the catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth technology, grows carbon nanotube cathod;
8), the making of anode plate: whole plate glass is carried out cutting, produce anode plate;
9), the making of anode conductive layer: evaporation one deck tin indium oxide rete on anode plate; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode conductive layer;
10), the making of insulation paste layer: in conjunction with silk-screen printing technique, non-display area printing at anode electrode layer is used to prevent parasitic electrons emission insulation paste layer, through overbaking, baking temperature: 150 ℃, retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
11), the making of phosphor powder layer: in conjunction with silk-screen printing technique, phosphor powder layer is printed in the viewing area on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
12), device assembling: negative electrode panel, anode plate, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip,
13), finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Main characteristics among the present invention are to have made integrated triangle tapered grid cathode structure, and have made and have field emission flat light-emitting display device integrated triangle tapered grid cathode structure, carbon nanotube cathod.
At first, make integrated triangle tapered grid cathode structure in the present invention, can greatly increase the emission area of carbon nanotube cathod.Because the both sides of triangle tapered structure all prepare catalyst metal layer is arranged, also just can both carry out the growth of carbon nanotube cathod.When after applying appropriate voltage on the grid, will form powerful electric field strength on the carbon nanotube cathod top, force carbon nanotube cathod to launch a large amount of electronics, form awkward silence at a meeting and cause the emission phenomenon.Institute's carbon nanotubes grown negative electrode has been covered with triangle tapered upper surface, has also just further increased the emission area of carbon nanotube cathod, has improved the electronic transmitting efficiency of carbon nanotube cathod;
Secondly, made integrated triangle tapered grid cathode structure in the present invention, grid structure is positioned at the below of carbon nanotube cathod structure, launches for the electronics of carbon nanotube cathod to play strong control action.When after applying appropriate voltage on the grid, carbon nanotube cathod will be launched a large amount of electronics, and institute's electrons emitted is under the high-tension effect of anode, and directly anode is told motion, impact fluorescence bisque and luminous.Because grid is positioned at the below of carbon nanotube cathod, and keep apart mutually with silicon dioxide layer between the two, so institute's electrons emitted can not be subjected to damming of grid structure, thereby formed grid current is also smaller, improve the field emission efficient of carbon nanotube cathod greatly, improved the luminous efficiency of integral display spare.
The 3rd, made integrated triangle tapered grid cathode structure in the present invention, grid conducting layer (comprising grid conductive electrode and doped polysilicon layer) is arranged on the negative electrode panel, growth has carbon nanotube cathod on cathode conductive layer, this structure effectively is integrated together grid and carbon nanotube cathod height, help further reducing the production cost of integral device, improve the display resolution of integral device, improve the electronic transmitting efficiency of device.
The 4th, made integrated triangle tapered grid cathode structure in the present invention, on cathode conductive layer, made catalyst metal layer, this has just done sufficient preparation for the growth of the carbon nanotube cathod in the subsequent technique, so just can directly carry out the growth of carbon nanotube cathod on the cathode conductive layer on the slope of triangle tapered structure.In conjunction with low temperature direct growth method, carried out the preparation of carbon nanotube cathod.Like this, just made full use of the good field emission characteristics that carbon nanotube cathod had of direct growth method preparation.
In addition, in the integrated triangle tapered grid cathode structure in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the making flow process of device, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of integrated triangle tapered grid cathode structure;
Fig. 2 has provided the transversary schematic diagram of integrated triangle tapered grid cathode structure;
Fig. 3 has provided and has had structural representation integrated triangle tapered grid cathode structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
As shown in Figure 3, the present invention includes by negative electrode panel 1, anode plate 11 and all around glass enclose sealed vacuum chamber that frame 8 constituted, phosphor powder layer 14, supporting wall structure 9 and the getter subsidiary component 10 on anode conductive layer 12 at anode conductive layer 12 that photoetching is arranged on the anode plate 11 and preparation, negative electrode panel 1 is provided with integrated triangle tapered grid cathode structure, wherein grid 2 is positioned at the below of carbon nanotube cathod 7, is controlling the electronics emission of carbon nanotube cathod.
The fixed position of described integrated triangle tapered grid cathode structure is for being fixed on the negative electrode panel 1, on negative electrode panel 1, there is a grid conducting layer 2, doped polysilicon layer 3 of existence on grid conducting layer 2, being shaped as of doped polysilicon layer 3 is triangle tapered, there is a dielectric isolation layer 4 on the negative electrode panel 1, dielectric isolation layer after the etching covers triangle tapered doped polysilicon layer 3 and grid conducting layer 2, cathode conductive layer 5 of the top existence of dielectric isolation layer 4, the trend of grid conducting layer 2 and cathode conductive layer 5 is orthogonal, there is a catalyst metal layer 6 above the cathode conductive layer 5, only there is the surface of the cathode conductive layer 5 that is positioned at triangle tapered structure in catalyst metal layer 6, and preparation has carbon nanotube cathod 7 on cathode conductive layer 5.
Grid conducting layer 2 on the negative electrode panel 1 of described integrated triangle tapered grid cathode structure is a metal level, is one of metal gold, silver, copper, aluminium, tin, chromium, indium, molybdenum, and the doped polysilicon layer that exists above 3 of grid conducting layer 2 is for the n type or be the p type.
The catalyst metal layer [6] that the cathode conductive layer 5 of described integrated triangle tapered grid cathode structure exists above is one of metallic iron, cobalt, nickel.
The manufacture craft of carbon nanotube field emission flat-panel monitor that has integrated triangle tapered grid cathode structure among the present invention is as follows:
1, the making of cathode glass faceplate: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2, the making of grid conducting layer: evaporation last layer crome metal on the negative electrode panel, in conjunction with conventional photoetching process, metallic chromium layer is carried out etching then, form grid conducting layer;
3, the making of doped polysilicon layer: on grid conducting layer, prepare doped polysilicon layer; In conjunction with conventional photoetching process, doped polysilicon layer is carried out etching; Doped polysilicon layer after the etching should have following shape, promptly form one triangle tapered, be positioned at grid conducting layer above; Doped polysilicon layer can be one deck, also can be multilayer; Doped polysilicon layer both can be the n type, also can be the p type;
4, the making of dielectric isolation layer: on the negative electrode panel, prepare a silicon dioxide layer, carry out etching, form dielectric isolation layer in conjunction with conventional photoetching process; Dielectric isolation layer after the etching will cover triangle tapered doped polysilicon layer and grid conducting layer fully;
5, the making of cathode conductive layer: evaporation last layer metal molybdenum layer on dielectric isolation layer, carry out etching in conjunction with conventional photoetching process, form cathode conductive layer; The trend of cathode conductive layer and grid conducting layer is orthogonal;
6, the making of catalyst metal layer: metal nickel dam of evaporation once more on cathode conductive layer, in conjunction with conventional photoetching process the metal nickel dam is carried out etching then, form catalyst metal layer; Catalyst metal layer after the etching should have following shape, that is: only there is the surface of the cathode conductive layer that is positioned at triangle tapered structure in catalyst metal layer, and the catalyst metal layer of remaining position will be etched away;
7, the growth of carbon nanotube cathod: the catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth technology, grows carbon nanotube cathod;
8, the reprocessing of carbon nanotube cathod: carbon nanotube cathod is carried out reprocessing, further improve the field emission characteristics of carbon nanotube cathod.
9, the making of anode glass panel: whole sodium calcium plate glass is carried out cutting, produce the anode glass panel;
10, the making of anode electrode layer: evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
11, the making of insulation paste layer: in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace:
12, the making of phosphor powder layer: in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
13, device assembling: cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
14, finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Integrated triangle tapered grid cathode structure among the present invention comprises cathode glass faceplate, grid conducting layer, doped polysilicon layer, dielectric isolation layer, cathode conductive layer, catalyst metal layer, carbon nanotube cathod part, and adopts following technology to make:
1, the making of cathode glass faceplate: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2, the making of grid conducting layer: evaporation last layer crome metal on the negative electrode panel, in conjunction with conventional photoetching process, metallic chromium layer is carried out etching then, form grid conducting layer;
3, the making of doped polysilicon layer: on grid conducting layer, prepare doped polysilicon layer; In conjunction with conventional photoetching process, doped polysilicon layer is carried out etching; Doped polysilicon layer after the etching should have following shape, promptly form one triangle tapered, be positioned at grid conducting layer above; Doped polysilicon layer can be one deck, also can be multilayer; Doped polysilicon layer both can be the n type, also can be the p type;
4, the making of dielectric isolation layer: on the negative electrode panel, prepare a silicon dioxide layer, carry out etching, form dielectric isolation layer in conjunction with conventional photoetching process; Dielectric isolation layer after the etching will cover triangle tapered doped polysilicon layer and grid conducting layer fully;
5, the making of cathode conductive layer: evaporation last layer metal molybdenum layer on dielectric isolation layer, carry out etching in conjunction with conventional photoetching process, form cathode conductive layer; The trend of cathode conductive layer and grid conducting layer is orthogonal;
6, the making of catalyst metal layer: metal nickel dam of evaporation once more on cathode conductive layer, in conjunction with conventional photoetching process the metal nickel dam is carried out etching then, form catalyst metal layer; Catalyst metal layer after the etching should have following shape, that is: only there is the surface of the cathode conductive layer that is positioned at triangle tapered structure in catalyst metal layer, and the catalyst metal layer of remaining position will be etched away;
7, the cleaning surfaces of integrated triangle tapered grid cathode structure is handled: clean is carried out on the surface to whole integrated triangle tapered grid cathode structure, removes dust and impurity;
8, the growth of carbon nanotube cathod: the catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth technology, grows carbon nanotube cathod;
9, the reprocessing of carbon nanotube cathod: carbon nanotube cathod is carried out reprocessing, further improve the field emission characteristics of carbon nanotube cathod.
The flat-plate luminous display that has integrated triangle tapered grid cathode structure among the present invention includes following part: by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode electrode layer is arranged on the anode glass panel and be printed on phosphor powder layer on the anode electrode layer; Integrated triangle tapered grid cathode structure is arranged on cathode glass faceplate, be used to control the grid and the carbon nanotubes grown negative electrode of electronics emission; Supporting wall structure and getter subsidiary component.Made integrated triangle tapered grid cathode structure on cathode glass faceplate, grid is positioned at the below of carbon nanotube cathod, is controlling the electronics emission of carbon nanotube cathod; Grid and carbon nanotube cathod all are a kind of triangle tapered structure, have increased the emission area of carbon nanotube cathod, make full use of the prepared good field emission characteristics that carbon nanotube cathod had of direct growth method, have improved the electronic transmitting efficiency of device.
The fixed position of the integrated triangle tapered grid cathode structure among the present invention is for being fixed on the negative electrode panel; Grid structure and cathode construction in the integrated triangle tapered grid cathode structure among the present invention highly are integrated together; Grid in the integrated triangle tapered grid cathode structure among the present invention is positioned at the below of carbon nanotube cathod, is controlling the electronics emission of carbon nanotube cathod; Grid in the integrated triangle tapered grid cathode structure among the present invention and negative electrode all are a kind of triangle tapered structure, have increased the emission area of carbon nanotube cathod; The backing material of the integrated triangle tapered grid cathode structure among the present invention be large-scale, have quite good thermal endurance and operability, a High Performance Insulation material with low cost; The backing material of the integrated triangle tapered grid cathode structure among the present invention is a glass, as soda-lime glass, and Pyrex, just the negative electrode panel of display device; There is a grid conducting layer on the negative electrode panel of integrated triangle tapered grid cathode structure, can carries out etching in conjunction with the photoetching process of routine; Grid conducting layer is a metal level, can be gold, silver, copper, aluminium, tin, chromium, indium, molybdenum; Doped polysilicon layer of the top existence of grid conducting layer can carry out etching in conjunction with the photoetching process of routine; Doped polysilicon layer can be one deck, also can be multilayer; Doped polysilicon layer both can be the n type, also can be the p type; Doped polysilicon layer after the etching should have following shape, promptly form one triangle tapered, be positioned at grid conducting layer above; Have a dielectric isolation layer on the negative electrode panel, promptly silicon dioxide layer can carry out etching in conjunction with the photoetching process of routine; Dielectric isolation layer after the etching will cover triangle tapered doped polysilicon layer and grid conducting layer fully; Cathode conductive layer of the top existence of dielectric isolation layer can carry out etching in conjunction with the photoetching process of routine; Cathode conductive layer is a metal level, can be gold, silver, tin, chromium, molybdenum, aluminum metal; The trend of grid conducting layer and cathode conductive layer is orthogonal; Have a catalyst metal layer above the cathode conductive layer, this catalyst metal layer can be metallic iron, cobalt, nickel; Catalyst metal layer can carry out etching in conjunction with the photoetching process of routine, catalyst metal layer after the etching should have following shape, that is: only there is the surface of the cathode conductive layer that is positioned at triangle tapered structure in catalyst metal layer, and the catalyst metal layer of remaining position will be etched away; Can utilize catalyst metals to prepare carbon nanotube cathod as catalyst.
Claims (6)
1, a kind of flat-panel monitor that has integrated triangle tapered grid cathode structure, comprise by negative electrode panel [1], anode plate [11] and all around glass enclose the sealed vacuum chamber that frame [8] is constituted, the phosphor powder layer [14] on anode conductive layer [12] at anode conductive layer [12] that photoetching is arranged on the anode plate [11] and preparation, supporting wall structure [9] and getter subsidiary component [10], it is characterized in that: negative electrode panel [1] is provided with integrated triangle tapered grid cathode structure, wherein grid [2] is positioned at the below of carbon nanotube cathod [7], is controlling the electronics emission of carbon nanotube cathod.
2, a kind of flat-panel monitor that has integrated triangle tapered grid cathode structure according to claim 1, it is characterized in that: the fixed position of described integrated triangle tapered grid cathode structure is for being fixed on the negative electrode panel [1], go up an existence grid conducting layer [2] at negative electrode panel [1], a doped polysilicon layer of existence [3] on grid conducting layer [2], being shaped as of doped polysilicon layer [3] is triangle tapered, negative electrode panel [1] is gone up and is had a dielectric isolation layer [4], dielectric isolation layer after the etching covers triangle tapered doped polysilicon layer [3] and grid conducting layer [2], a cathode conductive layer of the top existence of dielectric isolation layer [4] [5], the trend of grid conducting layer [2] and cathode conductive layer [5] is orthogonal, there is a catalyst metal layer [6] above the cathode conductive layer [5], only there is the surface of the cathode conductive layer [5] that is positioned at triangle tapered structure in catalyst metal layer [6], and going up preparation at cathode conductive layer [5] has carbon nanotube cathod [7].
3, a kind of flat-panel monitor that has integrated triangle tapered grid cathode structure according to claim 1, it is characterized in that: the grid conducting layer [2] on the negative electrode panel [1] of described integrated triangle tapered grid cathode structure is a metal level, be one of metal gold, silver, copper, aluminium, tin, chromium, indium, molybdenum, the doped polysilicon layer that exists above [3] of grid conducting layer [2] is the n type or is the p type.
4, a kind of flat-panel monitor that has integrated triangle tapered grid cathode structure according to claim 1, it is characterized in that: the dielectric isolation layer [4] on the negative electrode panel [1] of described integrated triangle mistake taper grid cathode structure is a silicon dioxide layer, dielectric isolation layer after the etching will cover triangle tapered doped polysilicon layer [3] and grid conducting layer [2] fully, the cathode conductive layer that exists above [5] of dielectric isolation layer [4] is a metal level, is one of metal gold, silver, tin, chromium, molybdenum, aluminium.
5, a kind of flat-panel monitor that has integrated triangle tapered grid cathode structure according to claim 1 is characterized in that: the catalyst metal layer [6] that the cathode conductive layer of described integrated triangle tapered grid cathode structure [5] exists above is one of metallic iron, cobalt, nickel.
6, a kind of manufacture craft that has the flat-panel monitor of integrated triangle tapered grid cathode structure, it is characterized in that: its manufacture craft is as follows:
1), the making of negative electrode panel [1]: whole plate glass is carried out scribing, produce negative electrode panel [1];
2), the making of grid conducting layer [2]: go up evaporation last layer metal at negative electrode panel [1], in conjunction with conventional photoetching process, metal is carried out etching then, form grid conducting layer [2];
3), the making of doped polysilicon layer [3]: on grid conducting layer [2], prepare doped polysilicon layer [3]; In conjunction with conventional photoetching process, doped polysilicon layer [3] is carried out etching; Doped polysilicon layer after the etching be one triangle tapered, be positioned at grid grid conducting layer [2] above;
4), the making of dielectric isolation layer [4]: on negative electrode panel [1], prepare a silicon dioxide layer, carry out etching, form dielectric isolation layer [4] in conjunction with conventional photoetching process; Dielectric isolation layer after the etching covers triangle tapered doped polysilicon layer [3] and grid conducting layer [2] fully;
5), the making of cathode conductive layer [5]: evaporation last layer metal level on dielectric isolation layer [4], carry out etching in conjunction with conventional photoetching process, form cathode conductive layer [5]; The trend of cathode conductive layer [5] and grid conducting layer [2] is orthogonal;
6), the making of catalyst metal layer [6]: metal level of evaporation once more on cathode conductive layer [5], in conjunction with conventional photoetching process metal level is carried out etching then, form catalyst metal layer [6]; Only there is the surface of the cathode conductive layer [5] that is positioned at triangle tapered structure in catalyst metal layer after the etching, and the catalyst metal layer of remaining position will be etched away;
7), the growth of carbon nanotube cathod [7]: the catalyst that utilizes catalyst metal layer [6] to use as carbon nano-tube in conjunction with low temperature direct growth technology, grows carbon nanotube cathod [7];
8), the making of anode plate [11]: whole plate glass is carried out cutting, produce anode plate [11];
9), the making of anode conductive layer [12]: go up evaporation one deck tin indium oxide rete at anode plate [11]; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode conductive layer [12];
10), the making of insulation paste layer: in conjunction with silk-screen printing technique, non-display area printing at anode electrode layer is used to prevent parasitic electrons emission insulation paste layer [13], through overbaking, baking temperature: 150 ℃, retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
11), the making of phosphor powder layer [14]: in conjunction with silk-screen printing technique, phosphor powder layer is printed in the viewing area on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
12), device assembling: negative electrode panel, anode plate, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip,
13), finished product is made: the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CN102324351A (en) * | 2011-09-07 | 2012-01-18 | 郑州航空工业管理学院 | Novel carbon nano tube field emission cold cathode and manufacturing method thereof |
| CN106098512A (en) * | 2016-07-07 | 2016-11-09 | 金陵科技学院 | The active display of oblique straight parallel fork gate mouth word point triangle top-type cathode construction |
| CN106098513A (en) * | 2016-07-07 | 2016-11-09 | 金陵科技学院 | The active display of the straight pentagonal pyramid cathode construction of slanted half-circle gate point |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002179418A (en) * | 2000-12-13 | 2002-06-26 | Tohoku Techno Arch Co Ltd | Method for forming carbon nanotube |
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| CN101071734B (en) * | 2007-06-19 | 2010-06-09 | 中原工学院 | Flat-panel display device with tooth type highgate-modulation structure and its preparing process |
| CN101075528B (en) * | 2007-06-19 | 2011-05-04 | 中原工学院 | Planar display device with reversed-angle laminated multi-bending cathode structure and its production |
| CN101071744B (en) * | 2007-06-20 | 2010-05-26 | 中原工学院 | Flat-panel display device with ring vertical plane modulated cathode structure and its preparing process |
| CN101728195B (en) * | 2009-12-08 | 2011-12-07 | 中原工学院 | Flat-panel display with staggered arris hung grid-control three pointed cone lunar structure and manufacturing technology thereof |
| CN102324351A (en) * | 2011-09-07 | 2012-01-18 | 郑州航空工业管理学院 | Novel carbon nano tube field emission cold cathode and manufacturing method thereof |
| CN106098512A (en) * | 2016-07-07 | 2016-11-09 | 金陵科技学院 | The active display of oblique straight parallel fork gate mouth word point triangle top-type cathode construction |
| CN106098513A (en) * | 2016-07-07 | 2016-11-09 | 金陵科技学院 | The active display of the straight pentagonal pyramid cathode construction of slanted half-circle gate point |
| CN106098513B (en) * | 2016-07-07 | 2017-08-29 | 金陵科技学院 | The active display and its manufacture craft of the straight pentagonal pyramid cathode construction of slanted half-circle gate point |
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| CN100446165C (en) | 2008-12-24 |
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