CN1942037B - 高电压高侧晶体管驱动器 - Google Patents

高电压高侧晶体管驱动器 Download PDF

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Publication number
CN1942037B
CN1942037B CN2006101099217A CN200610109921A CN1942037B CN 1942037 B CN1942037 B CN 1942037B CN 2006101099217 A CN2006101099217 A CN 2006101099217A CN 200610109921 A CN200610109921 A CN 200610109921A CN 1942037 B CN1942037 B CN 1942037B
Authority
CN
China
Prior art keywords
side transistor
signal
input signal
module
power input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006101099217A
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English (en)
Chinese (zh)
Other versions
CN1942037A (zh
Inventor
塞哈特·苏塔迪嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marvell Asia Pte Ltd
Original Assignee
Mawier International Trade Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mawier International Trade Co Ltd filed Critical Mawier International Trade Co Ltd
Publication of CN1942037A publication Critical patent/CN1942037A/zh
Application granted granted Critical
Publication of CN1942037B publication Critical patent/CN1942037B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices
    • H05B41/2825—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices by means of a bridge converter in the final stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S315/00—Electric lamp and discharge devices: systems
    • Y10S315/07—Starting and control circuits for gas discharge lamp using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Inverter Devices (AREA)
CN2006101099217A 2005-09-27 2006-08-24 高电压高侧晶体管驱动器 Expired - Fee Related CN1942037B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US72086605P 2005-09-27 2005-09-27
US60/720,866 2005-09-27
US76273806P 2006-01-27 2006-01-27
US60/762,738 2006-01-27
US11/367,638 2006-03-03
US11/367,638 US7619447B2 (en) 2005-09-27 2006-03-03 High voltage high side transistor driver

Publications (2)

Publication Number Publication Date
CN1942037A CN1942037A (zh) 2007-04-04
CN1942037B true CN1942037B (zh) 2012-04-18

Family

ID=37036902

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101099217A Expired - Fee Related CN1942037B (zh) 2005-09-27 2006-08-24 高电压高侧晶体管驱动器

Country Status (6)

Country Link
US (2) US7619447B2 (https=)
EP (1) EP1768257B1 (https=)
JP (1) JP2007097153A (https=)
CN (1) CN1942037B (https=)
SG (1) SG131017A1 (https=)
TW (1) TWI394368B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777370B2 (en) 2007-05-03 2010-08-17 Honeywell International Inc. Integrated gate drive for use in control and protection of power modules
US7656687B2 (en) 2007-12-11 2010-02-02 Cirrus Logic, Inc. Modulated transformer-coupled gate control signaling method and apparatus
US7804697B2 (en) * 2007-12-11 2010-09-28 Cirrus Logic, Inc. History-independent noise-immune modulated transformer-coupled gate control signaling method and apparatus
US8008898B2 (en) 2008-01-30 2011-08-30 Cirrus Logic, Inc. Switching regulator with boosted auxiliary winding supply
US7796076B2 (en) * 2008-02-26 2010-09-14 Cirrus Logic, Inc. Transformer-isolated analog-to-digital converter (ADC) feedback apparatus and method
US8008902B2 (en) 2008-06-25 2011-08-30 Cirrus Logic, Inc. Hysteretic buck converter having dynamic thresholds
US8014176B2 (en) 2008-07-25 2011-09-06 Cirrus Logic, Inc. Resonant switching power converter with burst mode transition shaping
US8816653B2 (en) * 2008-09-25 2014-08-26 Infineon Technologies Austria Ag Circuit including a transformer for driving a semiconductor switching element
US8222872B1 (en) 2008-09-30 2012-07-17 Cirrus Logic, Inc. Switching power converter with selectable mode auxiliary power supply
US8331114B2 (en) * 2009-02-10 2012-12-11 System General Corporation Flyback power converters having a high side driving circuit
US8198874B2 (en) 2009-06-30 2012-06-12 Cirrus Logic, Inc. Switching power converter with current sensing transformer auxiliary power supply
US8212493B2 (en) 2009-06-30 2012-07-03 Cirrus Logic, Inc. Low energy transfer mode for auxiliary power supply operation in a cascaded switching power converter
US9088220B2 (en) 2012-08-03 2015-07-21 Cooper Technologies Company Combined low power isolated power supply with isolated data transfer
WO2014135209A1 (en) * 2013-03-06 2014-09-12 SiEVA Apparatus for high side transistor bridge driver
DE102013205706A1 (de) 2013-03-28 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leistungselektronische schaltung und system mit derselben
US10051701B2 (en) 2014-07-16 2018-08-14 Philips Lighting Holding B.V. Systems and methods for maintaining dimmer behavior in a low-power lamp assembly
US9966837B1 (en) 2016-07-08 2018-05-08 Vpt, Inc. Power converter with circuits for providing gate driving
US11183835B2 (en) * 2019-07-16 2021-11-23 Infineon Technologies Austria Ag Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis
CN121444349A (zh) * 2023-08-31 2026-01-30 德州仪器公司 光模拟器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272398A (en) * 1991-09-12 1993-12-21 Otis Elevator Company Driver for power field-controlled switches with refreshed power supply providing stable on/off switching
US5301085A (en) * 1991-12-09 1994-04-05 Abb Stromberg Drives Oy Control circuit for a semiconductor switch
US5399913A (en) * 1992-09-02 1995-03-21 Exide Elecronics Corp. Gate-drive circuit
US5900683A (en) * 1997-12-23 1999-05-04 Ford Global Technologies, Inc. Isolated gate driver for power switching device and method for carrying out same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2668664B1 (fr) 1990-10-25 1995-06-09 Dassault Electronique Convertisseur de tension a decoupage, a commande perfectionnee.
US5309066A (en) 1992-05-29 1994-05-03 Jorck & Larsen A/S Solid state ballast for fluorescent lamps
FR2771590B1 (fr) 1997-11-21 2003-01-03 Sgs Thomson Microelectronics Circuit de commande de lampe fluorescente
IT1318952B1 (it) 2000-10-02 2003-09-19 St Microelectronics Srl Circuito di protezione alle alte correnti in convertitori perilluminazione
DE10106438A1 (de) 2001-02-09 2002-08-14 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Vorschaltgerät zum Betrieb von elektrischen Lampen
WO2003071836A1 (en) 2002-02-20 2003-08-28 Matsushita Electric Industrial Co., Ltd. Electrodeless discharge lamp lighting device, light bulb type electrodeless fluorescent lamp and discharge lamp lighting device
DE102004047372A1 (de) * 2004-09-29 2006-03-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Wandlerschaltung mit Klasse-E-Konvertermodulen
US7176723B2 (en) * 2005-02-18 2007-02-13 Semiconductor Components Industries Llc Translator circuit and method therefor
US7560866B2 (en) * 2005-04-18 2009-07-14 Marvell World Trade Ltd. Control system for fluorescent light fixture
US7405595B2 (en) * 2005-11-16 2008-07-29 System General Corp. High-side transistor driver having positive feedback for improving speed and power saving

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272398A (en) * 1991-09-12 1993-12-21 Otis Elevator Company Driver for power field-controlled switches with refreshed power supply providing stable on/off switching
US5301085A (en) * 1991-12-09 1994-04-05 Abb Stromberg Drives Oy Control circuit for a semiconductor switch
US5399913A (en) * 1992-09-02 1995-03-21 Exide Elecronics Corp. Gate-drive circuit
US5900683A (en) * 1997-12-23 1999-05-04 Ford Global Technologies, Inc. Isolated gate driver for power switching device and method for carrying out same

Also Published As

Publication number Publication date
TW200713816A (en) 2007-04-01
US8063670B2 (en) 2011-11-22
TWI394368B (zh) 2013-04-21
EP1768257B1 (en) 2014-06-18
US20100060327A1 (en) 2010-03-11
CN1942037A (zh) 2007-04-04
US7619447B2 (en) 2009-11-17
EP1768257A1 (en) 2007-03-28
US20070070653A1 (en) 2007-03-29
SG131017A1 (en) 2007-04-26
JP2007097153A (ja) 2007-04-12

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