CN1924681A - Thin-film transistor array substrate and its repairing method - Google Patents
Thin-film transistor array substrate and its repairing method Download PDFInfo
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- CN1924681A CN1924681A CN 200510098539 CN200510098539A CN1924681A CN 1924681 A CN1924681 A CN 1924681A CN 200510098539 CN200510098539 CN 200510098539 CN 200510098539 A CN200510098539 A CN 200510098539A CN 1924681 A CN1924681 A CN 1924681A
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Abstract
This invention relates to film transistor array baseboard, wherein, the multiple scan lines and data lines are set on the baseboard to divide several pixel areas with multiple layout lines parallel on the board and with scanning line between the two adjacent lines; several transistors are separately set in the pixel area connected to the relative scan layout line and data line; multiple pixel electrodes are set in the pixel area connected to the relative film transistors; the multiple compensation sections are set down the data layout line with one end overlapped on one side of transistor. This invention also provides one compensation method of the transistor array baseboard.
Description
Technical field
The present invention relates to a kind of active component array base board and method for repairing and mending thereof, and particularly relate to a kind of thin-film transistor array base-plate and method for repairing and mending thereof.
Background technology
Thin Film Transistor-LCD (TFT LCD) is made of thin-film transistor array base-plate, colorful filter array substrate and liquid crystal layer, wherein thin film transistor base plate is by a plurality of thin film transistor (TFT)s with arrayed, and forms with the pixel electrode (pixelelectrode) of the corresponding setting of each thin film transistor (TFT).Thin film transistor (TFT) is intended for the on-off element of pixel cell, and in order to control other pixel cell, usually choose specific pixel cell by the scan wiring (scan line) that is electrically connected with thin film transistor (TFT) with data wiring (date line), and it is granted suitable operating voltage, to show the video data of corresponding this pixel cell.
Though it is ripe that the production technology of Thin Film Transistor-LCD has become, display panel can produce some flaws unavoidably among manufacture process.These flaws can cause the discomfort on the sense organ when the display video picture, abandon these display panels defective if directly scrap, and will make that manufacturing cost significantly increases.In general, only rely on and improve technology and realize that zero defect rate is unusual difficulty, so the flaw repairing technique of display panels becomes suitable important.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of thin-film transistor array base-plate exactly, the problem that can't normally show in order to the pixel cell of avoiding causing because of defective workmanship, and then preferable technology qualification rate is provided.
Another object of the present invention provides a kind of method for repairing and mending of thin-film transistor array base-plate, in order to the thin-film transistor array base-plate with flaw pixel cell is repaired, and then improves the technology qualification rate of thin-film transistor array base-plate.
Based on above-mentioned or other purpose, the present invention proposes a kind of thin-film transistor array base-plate, and it comprises substrate, plurality of scanning wirings, many data wirings, many shared wiring, a plurality of thin film transistor (TFT), a plurality of pixel electrode and many repairing line segments.Wherein, scan wiring and data wiring are arranged on the substrate, and mark off a plurality of pixel regions that are arrayed on substrate, and shared wiring is set in parallel in fact on the substrate, and are provided with scan wiring between adjacent two shared wiring.In addition, thin film transistor (TFT) is arranged in the pixel region respectively, and each thin film transistor (TFT) is to be electrically connected to its pairing scan wiring and data wiring.Pixel electrode is arranged in the pixel region respectively, and each pixel electrode is electrically connected to its pairing thin film transistor (TFT).In addition, repair line segment and lay respectively at corresponding data wiring below, each thin film transistor (TFT) of repairing end data wiring one side pairing with it of line segment overlaps.
In above-mentioned thin-film transistor array base-plate, each other end of repairing line segment for example is to be electrically connected with the shared wiring of its pairing data wiring opposite side.
In above-mentioned thin-film transistor array base-plate, the both sides of each shared wiring for example have outward extending a plurality of branch respectively, and these branches are in close proximity to data wiring, and the other end of respectively repairing line segment one of is electrically connected in the branch of shared wiring of its pairing data wiring opposite side.
In above-mentioned thin-film transistor array base-plate, each repairs line segment for example is that the drain electrode of thin film transistor (TFT) pairing with it overlaps.
In above-mentioned thin-film transistor array base-plate, scan wiring, shared wiring and repairing line segment for example are to belong to same rete.Wherein, this rete for example is a metal level.
In above-mentioned thin-film transistor array base-plate, the material of pixel electrode for example is the electrically conducting transparent material.Wherein, the electrically conducting transparent material for example be indium tin oxide (Indium Tin Oxide, ITO) or indium-zinc oxide (Indium Zinc Oxide, IZO).
In above-mentioned thin-film transistor array base-plate, each thin film transistor (TFT) for example comprises grid, source electrode, drain electrode and semiconductor layer.Wherein, grid is electrically connected with its pairing scan wiring, and source electrode is electrically connected with its pairing data wiring, and drain electrode is electrically connected with its pairing pixel electrode.In addition, semiconductor layer is arranged between grid and source electrode and the drain electrode.
In above-mentioned thin-film transistor array base-plate, each semiconductor layer for example comprises channel layer and is arranged at ohmic contact layer on this channel layer.
The present invention proposes a kind of method for repairing and mending of thin-film transistor array base-plate in addition, it is suitable for above-mentioned thin-film transistor array base-plate is repaired, wherein above-mentioned thin-film transistor array base-plate has the flaw thin film transistor (TFT), makes the pixel region at flaw thin film transistor (TFT) place form the flaw pixel region.The method for repairing and mending of this thin-film transistor array base-plate comprises makes the pairing repairing line segment of flaw pixel region be electrically connected with the data wiring of its top, and the interior pixel electrode of pairing repairing line segment of flaw pixel region and flaw pixel region is electrically connected.
In the method for repairing and mending of above-mentioned thin-film transistor array base-plate, the other end of respectively repairing line segment of thin-film transistor array base-plate for example is to be electrically connected with the shared wiring of its pairing data wiring opposite side, and the method for repairing and mending of thin-film transistor array base-plate also comprises the pairing repairing line segment of separation flaw pixel region and its shared wiring that is electrically connected.
In the method for repairing and mending of above-mentioned thin-film transistor array base-plate, the method that the pairing repairing line segment of flaw pixel region is separated with its shared wiring that is electrically connected for example is cut (laser cut).
In the method for repairing and mending of above-mentioned thin-film transistor array base-plate, making the pairing repairing line segment of flaw pixel region for example is laser welding (laser shot) with the method that the data wiring of its top is electrically connected.
In the method for repairing and mending of above-mentioned thin-film transistor array base-plate, the flaw thin film transistor (TFT) has drain electrode, and the pairing repairing line segment of flaw pixel region for example to be the drain electrode that sees through the flaw thin film transistor (TFT) be electrically connected with the interior pixel electrode of flaw pixel region.
In the method for repairing and mending of above-mentioned thin-film transistor array base-plate, the method that the pairing repairing line segment of flaw pixel region is electrically connected with the drain electrode of flaw thin film transistor (TFT) for example is a laser welding.
The present invention's thin-film transistor array base-plate has many and repairs line segments, lays respectively at corresponding data wiring below, and the thin film transistor (TFT) of respectively repairing end data wiring one side pairing with it of line segment overlaps.When the flaw thin film transistor (TFT) is arranged in the thin-film transistor array base-plate, only need the two ends of the pairing repairing line segment of flaw pixel region are electrically connected with the data wiring of flaw thin film transistor (TFT) and repairing line segment top respectively, can finish the action of repairing.Because the disclosed method for repairing and mending of the present invention's thin-film transistor array base-plate and method for repairing and mending thereof is comparatively simple, therefore can save man-hour, and can reduce production costs.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the partial top view of the thin-film transistor array base-plate of one embodiment of the invention.
The synoptic diagram of Fig. 2 in one embodiment of the invention thin-film transistor array base-plate being repaired.
Fig. 3 is the flow chart of steps of method for repairing and mending of the film transistor array base palte of one embodiment of the invention.
The main element description of symbols
200: thin-film transistor array base-plate
210: scan wiring
220: data wiring
225: pixel region
225 ': the flaw pixel region
230: shared wiring
232: branch
240: thin film transistor (TFT)
240 ': the flaw thin film transistor (TFT)
241,241 ': grid
242,242 ': semiconductor layer
244,244 ': source electrode
246,246 ': drain electrode
250: pixel electrode
260,260 ': repair line segment
A, B: point
C: path
S110: the pairing repairing line segment of flaw pixel region is electrically connected with the data wiring of its top, and the interior pixel electrode of pairing repairing line segment of flaw pixel region and flaw pixel region is electrically connected
S120: separate the pairing repairing line segment of flaw pixel region and its shared wiring that is electrically connected
Embodiment
Fig. 1 is the partial top view of the thin-film transistor array base-plate of one embodiment of the invention.Please refer to Fig. 1, the thin-film transistor array base-plate 200 of present embodiment comprises substrate (not shown), plurality of scanning wirings 210, many data wirings 220, many shared wiring 230, a plurality of thin film transistor (TFT) 240, a plurality of pixel electrode 250 and many repairing line segments 260.Wherein, scan wiring 220 is arranged on the substrate with data wiring 230, and on substrate, mark off a plurality of pixel regions 225 that are arrayed, and shared wiring 230 is set in parallel in fact on the substrate, and is provided with scan wiring 210 between adjacent two shared wiring 230.In addition, thin film transistor (TFT) 240 is arranged at respectively in the pixel region 225, and each thin film transistor (TFT) 240 is electrically connected to its pairing scan wiring 210 and data wiring 220.Pixel electrode 250 is arranged at respectively in the pixel region 225, and each pixel electrode 250 is to be electrically connected to its pairing thin film transistor (TFT) 240.In addition, repair line segment 260 and lay respectively at corresponding data wiring 220 belows, each thin film transistor (TFT) 240 of repairing end data wiring 220 one sides pairing with it of line segment 260 overlaps.
In above-mentioned thin-film transistor array base-plate 200, substrate for example is a glass substrate, and thin film transistor (TFT) 240 for example comprises grid 241, semiconductor layer 242, source electrode 244 and drains 246, wherein, grid 241 is to be electrically connected with scan wiring 210, and semiconductor layer 242 is to be arranged on the grid 241.In one embodiment, semiconductor layer 242 for example comprises channel layer (not shown) and the ohmic contact layer (not shown) that is arranged on the channel layer.Source electrode 244 is to be arranged on the semiconductor layer 242 of grid 241 tops with drain electrode 246, and is electrically connected to its pairing data wiring 220 and pixel electrode 250 respectively.In addition, repairing line segment 260 for example is that the drain electrode 246 of thin film transistor (TFT) 240 pairing with it is overlapped.
In the present embodiment, grid 241, scan wiring 210, shared wiring 230 and repairing line segment 260 for example are to form simultaneously, that is grid 241, scan wiring 210, shared wiring 230 and repairing line segment 260 belong to same rete (as metal level).So, do not need additionally to expend time in to form and repair line segment 260, so can save and produce man-hour, reduce production costs.In addition, the material of pixel electrode 250 for example is indium tin oxide, indium-zinc oxide or other transparent or opaque conductive material.
Be in (floating) state of floating owing to repair line segment 260, static discharge takes place easily, and (Electrostatic Discharge ESD), and causes component wear.Therefore, in the present embodiment, the other end of repairing line segment 260 is electrically connected with the shared wiring 230 of its pairing data wiring 220 opposite sides,, and then reduces and repair the probability that static discharges take place line segment 260 with the function of generation voltage stabilizing.In a preferred embodiment, the both sides of each shared wiring 230 for example have outward extending many branches 232 respectively, and these branches 232 are in close proximity to data wiring 230, and the other end of respectively repairing line segment 260 is one of to be electrically connected in the branch 232 of shared wiring 230 of its pairing data wiring 220 opposite sides bar.
The synoptic diagram of Fig. 2 for thin-film transistor array base-plate being repaired in one embodiment of the invention, and Fig. 3 is the flow chart of steps of method for repairing and mending of the film transistor array base palte of one embodiment of the invention.Please refer to Fig. 2 and Fig. 3, when making thin-film transistor array base-plate, often cause the minority thin film transistor (TFT) flaw to occur because of defective workmanship (defect) or other factors easily and can't normally move.For instance, in the process of making thin-film transistor array base-plate, the step of dry ecthing is to utilize the plasma bombardment gas molecule, makes the state of gas molecule generation charge separation, so be easy to generate the accumulation of electric charge.These electric charges may puncture the good metal level of film forming after after a while gathering and accumulation, make grid 241 ' and the situation that source electrode 244 '/drain electrode 246 ' is short-circuited.So thin film transistor (TFT) 240 ' can't normally move, it can cause the pixel cell at thin film transistor (TFT) 240 ' place normally to show, thereby bright spot (or dim spot) occurs in the shown picture that goes out of LCD.Therefore, the method for repairing and mending of the thin-film transistor array base-plate of present embodiment is promptly repaired because the bright spot (or dim spot) that flaw thin film transistor (TFT) 240 ' is caused is carried out pixel at this.
The method for repairing and mending of the thin-film transistor array base-plate of present embodiment mainly is that flaw pixel region 225 ' pairing repairing line segment 260 ' is electrically connected with the data wiring 230 of its top, and makes flaw pixel region 225 ' pairing repairing line segment 260 ' and flaw pixel region 225 ' interior pixel electrode 250 be electrically connected (shown in step S110).In addition, when if the other end of respectively repairing line segment 260 of thin-film transistor array base-plate 200 is electrically connected with the shared wiring 230 of its pairing data wiring 220 opposite sides, the method for repairing and mending of the thin-film transistor array base-plate of present embodiment also comprises separation flaw pixel region 225 ' pairing repairing line segment 260 ' and its shared wiring that is electrically connected 230 (shown in step S120).
In more detail, mode that in the present embodiment can laser welding focuses on an A, B place from the front or the back side of thin-film transistor array base-plate 200 with laser light, flaw pixel region 225 ' pairing repairing line segment 260 ' is electrically connected with the data wiring 220 of its top, and repairing line segment 260 ' is electrically connected with the drain electrode 246 ' of flaw thin film transistor (TFT) 240 '.So, repairing drain electrode 246 ' that line segment 260 ' can see through flaw thin film transistor (TFT) 240 ' and flaw pixel region 225 ' interior pixel electrode 250 is electrically connected.In addition, the mode that can utilize cut in the present embodiment makes repairing line segment 260 ' separate with the branch 232 of its shared wiring that is electrically connected 230 along path C excision repair line segment 260 '.
Be electrically connected with the data wiring 220 of its top at repairing line segment 260 ', and with after the drain electrode 242 ' of flaw thin film transistor (TFT) 240 ' is electrically connected, the signal that is transmitted by data wiring 220, can directly transmit the pixel cell at thin film transistor (TFT) 240 ' place, this pixel cell can normally be shown by repairing line segment 260 '.
In sum, the present invention's thin-film transistor array base-plate and method for repairing and mending thereof have following advantage at least:
1. because repairing line segment and grid, scan wiring and shared wiring form simultaneously, do not need additionally to expend the time that forms the repairing line segment, thus the production man-hour of thin-film transistor array base-plate can be saved, and can reduce production costs.
2. the method for repairing and mending owing to thin-film transistor array base-plate is comparatively simple, so the man-hour that can reduce inpainted pixels, to save production cost.
3. each patch cord section is positioned at outside the viewing area, so can avoid influencing under the prerequisite of pixel aperture ratio, carries out pixel and repairs.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking the claim person of defining.
Claims (16)
1. thin-film transistor array base-plate is characterized in that comprising:
Substrate;
Plurality of scanning wirings is arranged on this substrate;
Many data wirings are arranged on this substrate, and above-mentioned these data wirings and above-mentioned these scan wirings are to mark off a plurality of pixel regions that are arrayed on this substrate;
Many shared wiring are set in parallel in fact on this substrate, and are provided with scan wiring between adjacent two shared wiring;
A plurality of thin film transistor (TFT)s are arranged at respectively in above-mentioned these pixel regions, and respectively this thin film transistor (TFT) is to be electrically connected to its pairing this scan wiring and this data wiring;
A plurality of pixel electrodes are arranged at respectively in above-mentioned these pixel regions, and respectively this pixel electrode is to be electrically connected to its pairing this thin film transistor (TFT); And
Repair line segment for many, lay respectively at corresponding above-mentioned these data wiring belows, respectively this thin film transistor (TFT) of an end of this repairing line segment this data wiring one side pairing with it overlaps.
2. thin-film transistor array base-plate according to claim 1 is characterized in that respectively the other end of this repairing line segment is electrically connected with this shared wiring of its pairing this data wiring opposite side.
3. thin-film transistor array base-plate according to claim 1, it is characterized in that respectively the both sides of this shared wiring have outward extending a plurality of branch respectively, and above-mentioned these branches are in close proximity to above-mentioned these data wirings, and respectively the other end of this repairing line segment is one of to be electrically connected in above-mentioned these branches of this shared wiring of its pairing this data wiring opposite side.
4. thin-film transistor array base-plate according to claim 1 is characterized in that respectively the drain electrode of this repairing line segment this thin film transistor (TFT) pairing with it overlaps.
5. thin-film transistor array base-plate according to claim 1 is characterized in that it is to belong to same rete that above-mentioned these scan wirings, above-mentioned these shared wiring and above-mentioned these are repaired line segment.
6. thin-film transistor array base-plate according to claim 5 is characterized in that this rete comprises metal level.
7. thin-film transistor array base-plate according to claim 1 is characterized in that the material of above-mentioned these pixel electrodes comprises the electrically conducting transparent material.
8. thin-film transistor array base-plate according to claim 7 is characterized in that this electrically conducting transparent material comprises indium tin oxide or indium-zinc oxide.
9. thin-film transistor array base-plate according to claim 1 is characterized in that respectively this thin film transistor (TFT) comprises:
Grid is electrically connected with its pairing this scan wiring;
Source electrode is electrically connected with its pairing this data wiring;
Drain electrode is electrically connected with its pairing this pixel electrode; And
Semiconductor layer is arranged between this grid and this source electrode and this drain electrode.
10. thin-film transistor array base-plate according to claim 9 is characterized in that respectively this semiconductor layer comprises:
Channel layer; And
Ohmic contact layer is arranged on this channel layer.
11. the method for repairing and mending of a thin-film transistor array base-plate, it is characterized in that being suitable for the 1st described thin-film transistor array base-plate of claim repaired, wherein this thin-film transistor array base-plate has the flaw thin film transistor (TFT), make the pixel region at this flaw thin film transistor (TFT) place form the flaw pixel region, the method for repairing and mending of this thin-film transistor array base-plate comprises makes pairing this repairing line segment of this flaw pixel region be electrically connected with this data wiring of its top, and this interior pixel electrode of pairing this repairing line segment of this flaw pixel region and this flaw pixel region is electrically connected.
12. the method for repairing and mending of thin-film transistor array base-plate according to claim 11, the other end that it is characterized in that respectively this repairing line segment of this thin-film transistor array base-plate is electrically connected with this shared wiring of its pairing this data wiring opposite side, and the method for repairing and mending of this thin-film transistor array base-plate also comprises this shared wiring that pairing this repairing line segment of this flaw pixel region of separation is electrically connected with it.
13. the method for repairing and mending of thin-film transistor array base-plate according to claim 12 is characterized in that the method that pairing this repairing line segment of this flaw pixel region is separated with this shared wiring that it is electrically connected comprises cut.
14. the method for repairing and mending of thin-film transistor array base-plate according to claim 11 is characterized in that making pairing this repairing line segment of this flaw pixel region to comprise laser welding with the method that this data wiring of its top is electrically connected.
15. the method for repairing and mending of thin-film transistor array base-plate according to claim 11, it is characterized in that this flaw thin film transistor (TFT) has drain electrode, and pairing this repairing line segment of this flaw pixel region is to be electrically connected with this pixel electrode in this flaw pixel region by this drain electrode of this flaw thin film transistor (TFT).
16. the method for repairing and mending of thin-film transistor array base-plate according to claim 15 is characterized in that making pairing this repairing line segment of this flaw pixel region to comprise laser welding with the method that this drain electrode of this flaw thin film transistor (TFT) is electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510098539 CN1924681A (en) | 2005-09-02 | 2005-09-02 | Thin-film transistor array substrate and its repairing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510098539 CN1924681A (en) | 2005-09-02 | 2005-09-02 | Thin-film transistor array substrate and its repairing method |
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| CN1924681A true CN1924681A (en) | 2007-03-07 |
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| CN 200510098539 Pending CN1924681A (en) | 2005-09-02 | 2005-09-02 | Thin-film transistor array substrate and its repairing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122684A (en) * | 2013-05-30 | 2014-10-29 | 深超光电（深圳）有限公司 | Display panel and method for manufacturing same |
| CN110352452A (en) * | 2017-02-28 | 2019-10-18 | 夏普株式会社 | Wiring substrate and display device |
-
2005
- 2005-09-02 CN CN 200510098539 patent/CN1924681A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122684A (en) * | 2013-05-30 | 2014-10-29 | 深超光电（深圳）有限公司 | Display panel and method for manufacturing same |
| CN110352452A (en) * | 2017-02-28 | 2019-10-18 | 夏普株式会社 | Wiring substrate and display device |
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Open date: 20070307 |