CN1740885A - Active component array substrate and method for repairing its picture element unit - Google Patents
Active component array substrate and method for repairing its picture element unit Download PDFInfo
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- CN1740885A CN1740885A CN 200510103903 CN200510103903A CN1740885A CN 1740885 A CN1740885 A CN 1740885A CN 200510103903 CN200510103903 CN 200510103903 CN 200510103903 A CN200510103903 A CN 200510103903A CN 1740885 A CN1740885 A CN 1740885A
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- 239000000758 substrate Substances 0.000 title claims description 88
- 238000000034 method Methods 0.000 title claims description 44
- 239000010409 thin film Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 54
- 238000002955 isolation Methods 0.000 claims description 16
- 238000001182 laser chemical vapour deposition Methods 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 210000000697 sensory organ Anatomy 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to an active component array baseplate, including a baseplate, several scanning lines, several data lines and several pixel units, in which several scanning lines, several data lines and several pixel units are set on the baseplate, every pixel unit is electrically-connected with correspondent scanning line and data line. Besides, at least partial pixel unit includes several active components and a pixel electrode. The active component is electrically-connected with correspondent scanning line and data line respectively, and the pixel electrode is electrically-connected with one active component of them, every pixel unit has several active components.
Description
Technical field
The present invention relates to the method for repairing and mending of a kind of active elements array substrates and pixel cell thereof, and particularly relate to a kind of the have active elements array substrates of standby active component (redundant active device) and the method for repairing and mending of pixel cell thereof.
Background technology
(Cathode Ray Tube has been since the black and white television set invention of mode of operation CRT), and display technique is just with the continuous evolution of very fast speed with cathode-ray tube (CRT) since first.Yet, since with the display of cathode ray tube manufacturers have that volume is big, shortcoming such as Heavy Weight, radiant quantity height and image quality are relatively poor, therefore new plane display technique just constantly is developed out.In these plane display techniques, compact to have again, power saving, low radiation, full-color and LCD (Liquid CrystalDisplay, LCD) the most skillful and universalness of technology of advantage such as be convenient for carrying.Such as mobile phone, digital camera, digital code camera, PDA(Personal Digital Assistant), mobile computer, LCD TV etc. all have its range of application.
Though it is ripe that LCD Technology has become, but display panels can produce some flaws (defect) unavoidably among manufacture process, and these flaws can cause the discomfort on the sense organ when the liquid crystal display displays image, abandon these display panels defective if directly scrap, will make that manufacturing cost significantly increases.In general, only rely on and improve technology and realize that zero defect rate is unusual difficulty, so the flaw repairing technique of display panels becomes suitable important.In the prior art, the flaw of display panels is repaired and is adopted laser welding (laser welding) or cut modes such as (laser cutting) to carry out usually.With Thin Film Transistor-LCD (TFT-LCD) is example, and the action of laser welding or cutting is normally carried out after thin film transistor (TFT) array (TFT array) completes.Yet because the cause of dot structure design be not that each flaw can both be repaired fast, even some flaw can't be repaired.
Figure 1A illustrates a kind of top view of existing thin-film transistor array base-plate, and Figure 1B and Fig. 1 C then illustrate the sectional view of Figure 1A along profile line a-b and profile line c-d respectively.Please be simultaneously with reference to Figure 1A to Fig. 1 C, existing thin-film transistor array base-plate 100 comprises a substrate 110, plurality of scanning wirings 120, many data wirings 130 and a plurality of pixel cell 140.Wherein, plurality of scanning wirings 120, many data wirings 130 and a plurality of pixel cell 140 all are disposed on the substrate 110.
Yet when above-mentioned thin film transistor (TFT) 142 broke down, pixel cell 140 just can't normal operation, thus in thin film transistor base plate 100 and colored filter group upright and inject liquid crystal after, display panels can produce bright spot.On display panels, form bright spot for fear of causing, must this bright spot be accomplished dim spot by laser preparing technology.Please continue the C referring to figs. 1A to Fig. 1, existing laser preparing is at lap 160 places, in the mode of laser welding indium-tin oxide electrode 144 and neighbor scanning distribution 120 is welded together.To become dim spot through the patched pixel cell 140 of aforesaid way.
Fig. 2 A illustrates the top view of another kind of existing thin-film transistor array base-plate, and Fig. 2 B and Fig. 2 C then illustrate the sectional view of Fig. 2 A along profile line a-b and profile line c-d respectively.Please be simultaneously with reference to Fig. 2 A to Fig. 2 C, existing thin film transistor base plate 200 comprises a substrate 110, plurality of scanning wirings 120, many data wirings 130, a plurality of pixel cell 140, many patch cords 210 and a plurality of preparing structure 220, and wherein plurality of scanning wirings 120, many data wirings 130, a plurality of pixel cell 140, many patch cords 210 and a plurality of preparing structure 220 all are disposed on the substrate 110.
Please continue the C with reference to Fig. 2 A to Fig. 2, when thin film transistor (TFT) 142 broke down, pixel cell 140 can't normal operation, thus in thin film transistor base plate 200 and colored filter group upright and inject liquid crystal after, display panels can produce bright spot.Therefore when pixel cell 140 can't normal operation, can be earlier with junction 150 cut-outs of the mode of cut with grid 142a and scan wiring 120, be welded together with the mode of laser welding two ends again patch cord 210 and preparing structure 220.But, can only present complete bright or complete dark state through the pixel cell after repairing.Yet when adding that compensate film increases the visual angle on large-sized display panels, the pixel cell of having repaired causes forming once again at certain visual angle bright spot because of light leak easily.
Summary of the invention
Because above-mentioned situation, purpose of the present invention is providing a kind of active elements array substrates exactly, and it has standby active component (redundant active device), so can effectively avoid display panels to produce bright spot.
Another object of the present invention is exactly that a kind of method for repairing and mending of pixel cell is being provided, and it can make the pixel cell normal operation after the reparation, and then improves the repair rate of display panels.
According to above-mentioned purpose or other purpose, the present invention proposes a kind of active elements array substrates, comprises a substrate, plurality of scanning wirings, many data wirings, a plurality of pixel cell.Wherein, plurality of scanning wirings, many data wirings, a plurality of pixel cells all are disposed on the substrate.Each pixel cell is electrically connected with data wiring with corresponding scan wiring, and the partial pixel unit also comprises a plurality of active components and a pixel electrode at least.Active component is electrically connected with data wiring with corresponding scan wiring respectively, and pixel electrode is electrically connected with one of them active component.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein active component comprises one first active component and one second active component, and first active yuan be electrically connected with pixel electrode, and second active component and pixel electrode electrical isolation.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein first active component for example is a first film transistor, and the first film transistor has a first grid, a first passage layer, one first source electrode and one first drain electrode.In addition, aforesaid first grid is electrically connected with scan wiring, and first source electrode is electrically connected with data wiring, and first drain electrode is electrically connected with pixel electrode.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein second active component for example is one second thin film transistor (TFT), and second thin film transistor (TFT) has a second grid, a second channel layer, one second source electrode and one second drain electrode.In addition, aforesaid second grid is electrically connected with scan wiring, and second source electrode is electrically connected with data wiring, and second drain electrode and pixel electrode electrical isolation.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein second thin film transistor (TFT) is positioned at the scan wiring top.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein the second channel layer is positioned at scan wiring and data wiring staggered place, and the second channel layer is sandwiched between scan wiring and the data wiring.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein second drain electrode for example extends to the pixel electrode below by a side of the past scan wiring in scan wiring top.
According to the active elements array substrates of the preferred embodiment of the present invention, wherein second drain electrode for example extends to the pixel electrode below toward the both sides of scan wiring simultaneously by the scan wiring top.
According to above-mentioned purpose or other purpose, the present invention proposes a kind of method for repairing and mending of pixel cell, is suitable for repairing a pixel cell in the above-mentioned active elements array substrates, and the method for repairing and mending of this pixel cell comprises the following steps.At first, cut off the junction of first active component and scan wiring and data wiring earlier, so that first active component and scan wiring and data wiring electrical isolation.Then, this second active component is electrically connected with pixel electrode.
According to the method for repairing and mending of the pixel cell of the preferred embodiment of the present invention, the method for wherein cutting off the junction of first active component and scan wiring and data wiring comprises cut.
According to the method for repairing and mending of the pixel cell of the preferred embodiment of the present invention, the method that second active component is electrically connected with pixel electrode comprises laser welding or laser chemical vapor deposition.
In the active elements array substrates of the present invention, each pixel cell all has a plurality of active components, and one of them active component is electrically connected with pixel electrode, when the active component that is electrically connected with pixel electrode damages, the present invention can adopt other active component (standby active component) that is arranged in this pixel cell to replace original active component, so that pixel cell still can normal operation, and then avoid display panels to produce the problem of bright spot.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A illustrates a kind of top view of existing thin-film transistor array base-plate.
Figure 1B and Fig. 1 C illustrate the sectional view of Figure 1A along profile line a-b and profile line c-d respectively.
Fig. 2 A illustrates the top view of another kind of existing thin-film transistor array base-plate.
Fig. 2 B and Fig. 2 C illustrate the sectional view of Fig. 2 A along profile line a-b and profile line c-d respectively.
Fig. 3 A illustrates the top view according to the active elements array substrates of first embodiment of the invention.
Fig. 3 B, Fig. 3 C and Fig. 3 D illustrate the sectional view of Fig. 3 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 4 A illustrates the top view according to the active elements array substrates of second embodiment of the invention.
Fig. 4 B, Fig. 4 C, Fig. 4 D illustrate the sectional view of Fig. 4 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 5 A illustrates the top view according to the active elements array substrates of third embodiment of the invention.
Fig. 5 B, Fig. 5 C and Fig. 5 D illustrate the sectional view of Fig. 5 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 6 A illustrates the top view according to the active elements array substrates of fourth embodiment of the invention.
Fig. 6 B, Fig. 6 C, Fig. 6 D illustrate the sectional view of Fig. 6 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 7 A illustrates the top view according to the active elements array substrates of fifth embodiment of the invention.
Fig. 7 B, Fig. 7 C and Fig. 7 D illustrate the sectional view of Fig. 7 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 8 A illustrates the top view according to the active elements array substrates of sixth embodiment of the invention.
Fig. 8 B, Fig. 8 C and Fig. 8 D illustrate the sectional view of Fig. 8 A along profile line a-b, profile line c-d and profile line e-f respectively.
Fig. 9 A illustrates the top view according to the active elements array substrates of seventh embodiment of the invention.
Fig. 9 B, Fig. 9 C and Fig. 9 D illustrate the sectional view of Fig. 9 A along profile line a-b, profile line c-d and profile line e-f respectively.
Figure 10 A illustrates the top view according to the active elements array substrates of eighth embodiment of the invention.
Figure 10 B, Figure 10 C and Figure 10 D illustrate the sectional view of Figure 10 A along profile line a-b, profile line c-d and profile line e-f respectively.
The simple symbol explanation
100,200: thin-film transistor array base-plate
110,310: substrate
120,320: scan wiring
130,330: data wiring
140,340: pixel cell
142, T1, T2: thin film transistor (TFT)
142a, g1, g2,910: grid
142b: amorphous silicon channel layer
142c, s1, s2,930: source electrode
142d, d1, d2,410,410 ', 510,520,610,710,810,940: drain electrode
144: indium-tin oxide electrode
146: contact hole
150,350,360,370: the junction
160: lap
210,420 ': patch cord
220: preparing structure
300,400,400 ', 500,600,700,800,900: active elements array substrates
342a, 342b: active component
344: pixel electrode
920, c1, c2: channel layer
L1, L2, L3: line of cut
Embodiment
[first embodiment]
Fig. 3 A illustrates the top view according to the active elements array substrates of first embodiment of the invention, and Fig. 3 B, Fig. 3 C, Fig. 3 D illustrate the sectional view of Fig. 3 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 3 A to Fig. 3 D, active elements array substrates 300 comprises a substrate 310, plurality of scanning wirings 320, many data wirings 330, a plurality of pixel cell 340.Wherein, plurality of scanning wirings 320, many data wirings 330 and a plurality of pixel cell 340 all are disposed on the substrate 310.
For example, substrate 310 can be glass substrate, quartz base plate or other transparency carrier.Scan wiring 320 can be aluminium alloy distribution or the formed distribution of other suitable conductor material, and 330 of data wirings can be chromium metal wiring, aluminium alloy distribution or the formed distribution of other suitable conductor material.More specifically, scan wiring 320 can be perpendicular to one another with the bearing of trend of data wiring 330, and to define a plurality of pixel regions (not illustrating), pixel cell 340 is then configurable in each pixel region.
By Fig. 3 A as can be known, pixel cell 340 and corresponding scan wiring 320 and data wiring 330 electrical connections, and each pixel cell 340 comprises one first active component 342a, one second active component 342b and a pixel electrode 344.Wherein, the first active component 342a and the second active component 342b are electrically connected with scan wiring 320 and data wiring 330 respectively, and pixel cell 344 then is electrically connected with one of them active component 342a.Though it should be noted that present embodiment is that example describes with two active components, pixel cell 340 visual demands of the present invention and adopt three or more active components.In addition, pixel electrode 344 can be transparency electrode (transmissive electrode), reflecting electrode (reflectiveelectrode) or semi-penetration semi-reflective electrode (transflective electrode).Hold above-mentioned, the material of pixel electrode 344 can be indium tin oxide, indium-zinc oxide (Indium Zinc Oxide, IZO), metal or other conductive material.
In the present embodiment, the first active component 342a is that the first film transistor T 1, the second active component 342b then is the second thin film transistor (TFT) T2.Wherein, the first film transistor T 1 is electrically connected with pixel electrode 344, and the second thin film transistor (TFT) T2 and pixel electrode 344 electrical isolations.It should be noted that when the present invention adopts active component more than three in single pixel cell 340, only have an active component to be electrically connected with pixel electrode 344, other active component (standby active component) all with pixel electrode 344 electrical isolations.
Hold above-mentionedly, the first film transistor T 1 has a first grid g1, a first passage layer c1, one first source electrode s1 and one first drain electrode d1.Wherein, first grid g1 is electrically connected with scan wiring 320, and its material is identical with scan wiring 320; The material of first passage layer c1 can be amorphous silicon, polysilicon or monocrystalline silicon; The first source electrode s1 is electrically connected with data wiring 330, and its material is identical with data wiring 330; The first drain electrode d1 is electrically connected with pixel electrode 344, and its material is identical with data wiring 330.Similarly, the second thin film transistor (TFT) T2 has a second grid g2, a second channel layer c2, one second source electrode s2 and one second drain electrode d2.Wherein, the material of second grid g2, second channel layer c2, the second source electrode s2 and the second drain electrode d2 is all described identical with the first film transistor T 1.In addition, second grid g2 is electrically connected with scan wiring 320; The second source electrode s2 is electrically connected with data wiring 330; Second drain electrode d2 and pixel electrode 344 electrical isolations.
What deserves to be mentioned is, the second thin film transistor (TFT) T2 of present embodiment is positioned at scan wiring 320 tops, and the second channel layer c2 of the second thin film transistor (TFT) T2 is positioned at scan wiring 320 and data wiring 330 staggered places, and is sandwiched between scan wiring 320 and the data wiring 330.In addition, second of the present embodiment drain electrode d2 extends to pixel electrode 344 belows by a side of the past scan wiring 320 in scan wiring 320 tops.
When the first film transistor T 1 damaged, pixel cell 340 no normal operations were so after active elements array substrates 300 and colored filter group were stood and injected liquid crystal, display panels can form bright spot.At this moment, need pixel cell 340 to be repaired with laser preparing technology.Please continue D with reference to figure 3A to Fig. 3, at first need carry out cut, with junction 350, the first film transistor T 1 and the junction 360 of data wiring 330 and junction 370 at least one of them cut-out of the first film transistor T 1 and pixel electrode 344 of the first film transistor T 1 with scan wiring 320.If the junction 350 of the first film transistor T 1 with scan wiring 320 cut off along line of cut L1, then can make the first film transistor T 1 and scan wiring 320 electrical isolations; If the junction 360 of the first film transistor T 1 with data wiring 330 cut off along line of cut L2, then can make the first film transistor T 1 and data wiring 330 electrical isolations; If the junction 370 of the first film transistor T 1 with pixel electrode 344 cut off along line of cut L3, then can make the first film transistor T 1 and pixel electrode 344 electrical isolations.For example, in the present embodiment, the method for cutting off junction 350,360 or 370 comprises cut.
Then, the second thin film transistor (TFT) T2 is electrically connected with pixel electrode 344, its method comprises that the mode with laser welding is welded together the second drain electrode d2 and pixel electrode 344.Other method is earlier with the protective seam on the boiled second drain electrode d2 of laser, again with laser chemical vapor deposition (laser chemicalvapor deposition, laser CVD) formation one thin metal layer connection second drain electrode d2 and the pixel electrode 344.So behind the repairing pixel unit, will can on display panels, not cause bright spot.
[second embodiment]
Fig. 4 A illustrates the top view according to the active elements array substrates of second embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 4 B, Fig. 4 C, Fig. 4 D illustrate the sectional view of Fig. 4 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 4 A to Fig. 4 D, the active elements array substrates 400 of present embodiment is similar to the active elements array substrates 300 of first embodiment, only the two main difference is: in the active elements array substrates 400 of present embodiment, second drain electrode 410 is arranged in adjacent unit pixel 340, and extends adjacent pixel electrodes 344 belows so far by scan wiring 320 tops toward a side of scan wiring 320.
Please continue D with reference to figure 4A to Fig. 4, when the first film transistor T 1 (the first film transistor T 1 on Fig. 4 A left side) of adjacent pixel unit 340 damages, at first need carry out cut, with junction 370 one of them cut-out at least of the junction 360 of the junction 350 of this first film transistor T 1 and scan wiring 320, this first film transistor T 1 and data wiring 330 and this first film transistor T 1 with the pixel electrode 344 on the left side.If the junction 350 of this first film transistor T 1 with scan wiring 320 cut off along line of cut L1, then can make this first film transistor T 1 and scan wiring 320 electrical isolations; If the junction 360 of this first film transistor T 1 with data wiring 330 cut off along line of cut L2, then can make this first film transistor T 1 and data wiring 330 electrical isolations; If the junction 370 of this first film transistor T 1 with the pixel electrode 344 on the left side cut off along line of cut L3, then can make pixel electrode 344 electrical isolations on this first film transistor T 1 and the left side.For example, in the present embodiment, the method for cutting off junction 350,360 or 370 comprises cut.
It should be noted that because second drain electrode 410 of the second thin film transistor (TFT) T2 is arranged in adjacent unit pixel 340, and extend under the pixel electrode 344 by the direction toward adjacent pixel unit 340 on the scan wiring 320.Therefore the second thin film transistor (TFT) T2 must be electrically connected with the pixel electrode 344 on Fig. 4 A left side, its method comprises that the mode with laser welding is welded together second drain electrode 410 of the second thin film transistor (TFT) T2 and the pixel electrode 344 on Fig. 4 A left side.Other method is earlier with the protective seam in second drain electrode 410 of the boiled second thin film transistor (TFT) T2 of laser; form a thin metal layer with laser chemical vapor deposition (laserchemical vapor deposition, laser CVD) again and connect second drain electrode 410 of the second thin film transistor (TFT) T2 and the pixel electrode 344 on Fig. 4 A left side.
[the 3rd embodiment]
Fig. 5 A illustrates the top view according to the active elements array substrates of third embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 5 B, Fig. 5 C, Fig. 5 D illustrate the sectional view of Fig. 5 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 5 A to Fig. 5 D, the active elements array substrates 500 of present embodiment is similar to the active elements array substrates 300 of first embodiment, only the two main difference is: in the active elements array substrates 500 of present embodiment, only just form the second thin film transistor (TFT) T2, so left and right sides adjacent unit pixel 340 has second a shared thin film transistor (TFT) T2 in the staggered place of odd number bar or even data scan wiring 330 and scan wiring 320.In addition, the second thin film transistor (TFT) T2 of present embodiment has two second drain electrodes 510,520, and second drain electrode 520 is arranged in adjacent unit pixel 240, and extends to adjacent pixel electrodes 344 belows by a side of the past scan wiring 320 in scan wiring 320 tops.
Fig. 5 A illustrates two pixel cells 340, when the first film transistor T 1 of the pixel cell 340 on the right damages, can utilize second drain electrode 510 that the pixel cell 340 on the right is repaired, and its restorative procedure is described identical with first embodiment; When the first film transistor T 1 of the pixel cell 340 on the left side damages, can utilize second drain electrode 520 that the pixel cell 340 on the left side is repaired its restorative procedure and second
Embodiment is described identical.
[the 4th embodiment]
Fig. 6 A illustrates the top view according to the active elements array substrates of fourth embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 6 B, Fig. 6 C, Fig. 6 D illustrate the sectional view of Fig. 6 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 6 A to Fig. 6 D, the active elements array substrates 600 of present embodiment is similar to the active elements array substrates 300 of first embodiment, only the two main difference is: in the active elements array substrates 600 of present embodiment, second drain electrode 610 extends to pixel electrode 344 belows by scan wiring 320 tops toward sides of scan wiring 320, and opposite among the direction of its extension and first embodiment.
The method for repairing and mending of the pixel cell 344 of present embodiment is similar to described in first embodiment.Please continue D with reference to figure 6A to Fig. 6, when the first film transistor T 1 damages, at first need carry out cut, with junction 350, the first film transistor T 1 and the junction 360 of data wiring 330 and junction 370 at least one of them cut-out of the first film transistor T 1 and pixel electrode 344 of the first film transistor T 1 with scan wiring 320.The method of cutting off junction 350,360 or 370 for example comprises cut.It should be noted that because the second drain electrode d2 of the second thin film transistor (TFT) T2 is extended under the last pixel electrode 344 by the direction toward an adjacent last pixel cell 340 on the scan wiring 320.The second thin film transistor (TFT) T2 that therefore must will be positioned at Fig. 6 A below is electrically connected with pixel electrode 344, its method comprise the mode with laser welding will be positioned at Fig. 6 A below the second thin film transistor (TFT) T2 second drain 610 and pixel electrode 344 be welded together.Other method is earlier with the protective seam in second drain electrode 610 of the second thin film transistor (TFT) T2 below the boiled Fig. 6 of the being positioned at A of laser; form second drain electrode 610 and pixel electrode 344 of the second thin film transistor (TFT) T2 of thin metal layer connection layout 6A below again with laser chemical vapor deposition (laser chemical vapor deposition, laser CVD).
[the 5th embodiment]
Fig. 7 A illustrates the top view according to the active elements array substrates of fifth embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 7 B, Fig. 7 C, Fig. 7 D illustrate the sectional view of Fig. 7 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 7 A to Fig. 7 D, the active elements array substrates 700 of present embodiment is similar to the active elements array substrates 300 of first embodiment.In the active elements array substrates 300 of first embodiment, each pixel cell 344 all has one second thin film transistor (TFT) T2, yet in the active elements array substrates 700 of present embodiment, only just form the second thin film transistor (TFT) T2 in the staggered place of odd number bar or even number bar scan wiring 320 and data wiring 330, therefore neighbouring pixel cell has second a shared thin film transistor (TFT) T2.In addition, second of the second thin film transistor (TFT) T2 of the present embodiment drain electrode 710 is to extend to pixel electrode 344 belows toward the both sides of scan wiring 320 simultaneously by scan wiring 320 tops.What deserves to be mentioned is, though in the present embodiment, only just form the second thin film transistor (TFT) T2 in the staggered place of odd number bar or even number bar scan wiring 320 and data wiring 330, but also can be at the staggered place formation second channel layer c2 of the scan wiring 320 that does not form the second thin film transistor (TFT) T2 with data wiring 330.
Please continue D with reference to figure 7A to Fig. 7, when one of them the first film transistor T 1 of neighbouring pixel cell damages, at first need carry out cut, with junction 350, the first film transistor T 1 and the junction 360 of data wiring 330 and junction 370 at least one of them cut-out of the first film transistor T 1 and pixel electrode 344 of the first film transistor T 1 with scan wiring 320.The method of cutting off junction 350,360 or 370 for example comprises cut.Then, the second drain electrode d2 with the second thin film transistor (TFT) T2 is electrically connected with pixel electrode 344 in the mode of laser welding, and method comprises laser welding or laser chemical vapor deposition.Because neighbouring pixel cell has second a shared thin film transistor (TFT) T2, and second drain electrode 710 of this second thin film transistor (TFT) T2 is to extend to pixel electrode 344 belows toward the both sides of scan wiring 320 simultaneously by scan wiring 320 tops, so arbitrary the first film transistor T 1 of adjacent pixel unit all replaces it with the second thin film transistor (TFT) T2 that shares when damaging.
[the 6th embodiment]
Fig. 8 A illustrates the top view according to the active elements array substrates of sixth embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 8 B, Fig. 8 C, Fig. 8 D illustrate the sectional view of Fig. 8 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 8 A to Fig. 8 D, the active elements array substrates 800 of present embodiment is similar to the active elements array substrates 300 of first embodiment, only the two main difference is: second drain electrode 810 is extended out by the side of scan wiring 320 tops toward scan wiring 320, but does not extend to pixel electrode 344 belows.
Please continue D with reference to figure 8A to Fig. 8, when the first film transistor T 1 damages, at first need carry out cut, with junction 350, the first film transistor T 1 and the junction 360 of data wiring 330 and junction 370 at least one of them cut-out of the first film transistor T 1 and pixel electrode 344 of the first film transistor T 1 with scan wiring 320.The method of cutting off junction 350,360 or 370 for example comprises cut.Then, the second thin film transistor (TFT) T2 is electrically connected with pixel electrode 344.And in the present embodiment; because second drain electrode 810 does not extend to pixel electrode 344 belows; therefore must connect second drain electrode 810 and pixel electrode 344 with the long-pending thin metal layer that forms in the meteorological Shen of laser chemistry more earlier with the protective seam in boiled second drain electrode 810 of laser.In other words, in the present embodiment must be by laser chemistry vapor phase deposition method repairing pixel unit 340, and can't be in the mode of laser welding with it reparation.
[the 7th embodiment]
Fig. 9 A illustrates the top view according to the active elements array substrates of seventh embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Fig. 9 B, Fig. 9 C, Fig. 9 D illustrate the sectional view of Fig. 9 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Fig. 9 A to Fig. 9 D, the active elements array substrates 900 of present embodiment is similar to the active elements array substrates 300 of first embodiment.Wherein, second thin film transistor (TFT) is positioned at scan wiring 320 tops, and its second source electrode 930 is electrically connected with data wiring 330.Second channel layer 920 is positioned at from the staggered place of scan wiring 320 and data wiring 330 a segment distance part, and be sandwiched between scan wiring 320, second source electrode 930 and second drain electrode 940, and second drain electrode 940 extends to pixel electrode 344 belows by the side toward scan wiring above the scan wiring.
Please continue D with reference to figure 9A to Fig. 9, when the first film transistor T 1 damages, at first need carry out cut, with junction 350, the first film transistor T 1 and the junction 360 of data wiring 330 and junction 370 at least one of them cut-out of the first film transistor T 1 and pixel electrode 344 of the first film transistor T 1 with scan wiring 320.The method of cutting off junction 350,360 or 370 for example comprises cut.Then, the mode with laser welding is electrically connected the second thin film transistor (TFT) T2 with pixel electrode 344.Its method comprises with laser second drain electrode 940 is welded together with pixel electrode 344.Other method is earlier with the protective seam in boiled second drain electrode 940 of laser, again with laser chemical vapor deposition (laser chemical vapor deposition, laser CVD) formation one thin metal layer connection second drain electrode 940 and pixel electrode 344.
[the 8th embodiment]
Figure 10 A illustrates the top view according to the active elements array substrates of eighth embodiment of the invention, the distortion of the active elements array substrates that it is illustrated for Fig. 3 A, and Figure 10 B, Figure 10 C, Figure 10 D illustrate the sectional view of Figure 10 A along profile line a-b, profile line c-d, profile line e-f respectively.Please be simultaneously with reference to Figure 10 A to Figure 10 D, the active elements array substrates 400 of the active elements array substrates 400 ' of present embodiment and second embodiment is similar.Difference is: the active elements array substrates 400 ' of present embodiment has a patch cord 420 ', and it is positioned at the below of second drain electrode 410 and pixel electrode 344.Patch cord 420 ' is a first metal layer, and by a dielectric layer and second drain electrode 410 and pixel electrode 344 electrical isolations.
Please continue D referring to figures 10A to Figure 10, when the first film transistor T 1 (the first film transistor T 1 on Fig. 4 A left side) of adjacent pixel unit 340 damages, at first need carry out cut, with junction 370 one of them cut-out at least of the junction 360 of the junction 350 of this first film transistor T 1 and scan wiring 320, this first film transistor T 1 and data wiring 330 and this first film transistor T 1 with the pixel electrode 344 on the left side.The method of cutting off junction 350,360 or 370 for example comprises cut.Then, burn patch cord 420 ' and second drain electrode 410 ', the overlapping of pixel electrode 344 respectively with laser, make second drain electrode 410 ', pixel electrode 344 and patch cord 420 ' welding, the second thin film transistor (TFT) T2 is electrically connected with the pixel electrode 344 on Figure 10 A left side, thereby finishes the repairing of the pixel cell 340 on Figure 10 A left side.
In sum, the method for repairing and mending of thin-film transistor array base-plate of the present invention and pixel cell thereof has following advantage at least:
One, the pixel cell compared to existing thin-film transistor array base-plate only has a thin film transistor (TFT), and active elements array substrates proposed by the invention has standby active component.When the active component that is electrically connected with pixel electrode damages, the present invention can adopt other active component (standby active component) that is arranged in this pixel cell to replace original active component, so that pixel cell still can normal operation, and then avoid display panels to produce the problem of bright spot.So can improve the repair rate of display panels.
Two, the existing thin-film transistor array base-plate that has patch cord compared to another, its pixel cell can only present complete bright or complete dark state after repairing.Pixel cell in the active elements array substrates of the present invention can recover its normal function after repairing.
Three, the method for repairing and mending of the making of active elements array substrates of the present invention and pixel cell and existing process compatible though need are revised the twice optical mask pattern in the technology, need not increase extra process equipment.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (11)
1, a kind of active elements array substrates comprises:
One substrate;
Plurality of scanning wirings is disposed on this substrate;
Many data wirings are disposed on this substrate;
A plurality of pixel cells, each pixel cell is electrically connected with this data wiring with corresponding this scan wiring, and the partial pixel unit comprises at least:
A plurality of active components are electrically connected with this data wiring with corresponding this scan wiring respectively; And
One pixel electrode is electrically connected with one of them active component.
2, active elements array substrates as claimed in claim 1, wherein this active component comprises:
One first active component is electrically connected with this pixel electrode; And
One second active component is with this pixel electrode electrical isolation.
3, active elements array substrates as claimed in claim 2, wherein this first active component is a first film transistor, and this first film transistor has a first grid that is electrically connected with this scan wiring, a first passage layer, first source electrode that is electrically connected with this data wiring, and first drain electrode that is electrically connected with this pixel electrode.
4, active elements array substrates as claimed in claim 2, wherein this second active component is one second thin film transistor (TFT), and this second thin film transistor (TFT) has a second grid that is electrically connected with this scan wiring, a second channel layer, second source electrode that is electrically connected with this data wiring, and one and this pixel electrode electrical isolation second the drain electrode.
5, active elements array substrates as claimed in claim 4, wherein this second thin film transistor (TFT) is positioned at this scan wiring top.
6, active elements array substrates as claimed in claim 5, wherein this second channel layer is positioned at this scan wiring and this data wiring staggered place, and this second channel layer is sandwiched between this scan wiring and this data wiring.
7, active elements array substrates as claimed in claim 5, wherein this second drain electrode extends to this pixel electrode below by a side of this past this scan wiring in scan wiring top.
8, active elements array substrates as claimed in claim 5, wherein this second drain electrode extends to this pixel electrode below toward the both sides of this scan wiring simultaneously by this scan wiring top.
9, a kind of method for repairing and mending of pixel cell is suitable for repairing a pixel cell in the described active elements array substrates of claim 2, and the method for repairing and mending of this pixel cell comprises:
Cut off the junction of this first active component and this scan wiring and this data wiring, so that this first active component and this scan wiring and this data wiring electrical isolation; And
This second active component is electrically connected with this pixel electrode.
10, the method for repairing and mending of pixel cell as claimed in claim 9, the method for wherein cutting off the junction of this first active component and this scan wiring and this data wiring comprises cut.
11, the method for repairing and mending of pixel cell as claimed in claim 9, the step that this second active component is electrically connected with this pixel electrode comprises laser welding or laser chemical vapor deposition.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101039033A CN100426111C (en) | 2005-09-15 | 2005-09-15 | Active component array substrate and method for repairing its picture element unit |
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| CNB2005101039033A CN100426111C (en) | 2005-09-15 | 2005-09-15 | Active component array substrate and method for repairing its picture element unit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101285977B (en) * | 2008-05-30 | 2010-06-02 | 昆山龙腾光电有限公司 | LCD device and its array substrate |
| US8390654B2 (en) | 2007-08-30 | 2013-03-05 | Sharp Kabushiki Kaisha | Display and method for fabricating the same |
| WO2014205892A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and manufacturing and repairing method therefor, and display device |
| WO2019056521A1 (en) * | 2017-09-20 | 2019-03-28 | 深圳市华星光电技术有限公司 | Array substrate, display panel, and pixel repairing method |
| US10396100B2 (en) | 2017-09-20 | 2019-08-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Array substrate, display panel and pixel patching method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100848099B1 (en) * | 2002-05-27 | 2008-07-24 | 삼성전자주식회사 | A thin film transistor panel for a liquid crystal display |
| KR20030094452A (en) * | 2002-06-04 | 2003-12-12 | 삼성전자주식회사 | Thin film transistor array panel for liquid crystal display |
| KR100539833B1 (en) * | 2002-10-21 | 2005-12-28 | 엘지.필립스 엘시디 주식회사 | array circuit board of LCD and fabrication method of thereof |
| CN1288486C (en) * | 2003-04-11 | 2006-12-06 | 广辉电子股份有限公司 | Liquid crystal display with double-film transister pixel structure |
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- 2005-09-15 CN CNB2005101039033A patent/CN100426111C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8390654B2 (en) | 2007-08-30 | 2013-03-05 | Sharp Kabushiki Kaisha | Display and method for fabricating the same |
| CN101285977B (en) * | 2008-05-30 | 2010-06-02 | 昆山龙腾光电有限公司 | LCD device and its array substrate |
| US8094111B2 (en) | 2008-05-30 | 2012-01-10 | Infovision Optoelectronics (Kunshan) Co., Ltd. | Liquid crystal display and array substrate thereof |
| WO2014205892A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and manufacturing and repairing method therefor, and display device |
| US9366926B2 (en) | 2013-06-28 | 2016-06-14 | Beijing Boe Display Technology Co., Ltd. | Pixel unit, array substrate, method for manufacturing array substrate, method for repairing array substrate, and display device |
| WO2019056521A1 (en) * | 2017-09-20 | 2019-03-28 | 深圳市华星光电技术有限公司 | Array substrate, display panel, and pixel repairing method |
| US10396100B2 (en) | 2017-09-20 | 2019-08-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Array substrate, display panel and pixel patching method |
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| CN100426111C (en) | 2008-10-15 |
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