CN1921301A - Surface acoustic wave element and method for making same - Google Patents
Surface acoustic wave element and method for making same Download PDFInfo
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- CN1921301A CN1921301A CN 200510036916 CN200510036916A CN1921301A CN 1921301 A CN1921301 A CN 1921301A CN 200510036916 CN200510036916 CN 200510036916 CN 200510036916 A CN200510036916 A CN 200510036916A CN 1921301 A CN1921301 A CN 1921301A
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- acoustic wave
- surface acoustic
- wave element
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Abstract
The invention relates to a surface sonic wave element, which comprises one piezoelectric base plate, the first energy exchanger and the second energy exchanger that on the base plate and coupled. Wherein, at least one energy exchanger has two electrodes parallel in screw shape. Compared with present technique, the inventive electrodes are alternated into screw shape, to obtain long supposition length and reduce the insertion consumption; in addition, the parameters of screw electrode as length, etc can be changed to control the insertion consumption, frequency width, etc.
Description
[technical field]
The invention relates to a kind of surface acoustic wave element and preparation method thereof, especially about a kind of surface acoustic wave element and preparation method thereof with less insertion loss.
[background technology]
Surface acoustic wave element is to be used in the ripple of propagating on a kind of elastic solid (Hookean body) surface, carries out the signal of telecommunication and handles.Typical surface acoustic wave element is to utilize a transducer, will convert the sound signal ripple slower than the light velocity with the electromagnetic signal ripple of light velocity propagation to.This significant wavelength reduces to make the designer in than the much smaller space of traditional circuit design requisite space, implements some complicated signal processing functions.The surface acoustic wave element that has adopted advanced microelectronic processing technique to make, have that volume is little, in light weight, reliability is high, high conformity and advantage such as multi-functional, in systems such as communication, TV, remote control and warning, be used widely, for example be used for filter, resonator, oscillator, delay line and other similar device, all used a plurality of surface acoustic wave filters in hundreds of millions of mobile phones and the television set.Along with the develop rapidly of processing technology, surface acoustic wave element has become one of the indispensable key components of modern information industry.
A kind of existing surface acoustic wave element is to be produced on the piezoelectric substrate, adopt microelectronic process engineering to make interdigital transducer and reflector etc., utilize the piezoelectric effect of substrate material, (Inter Digital Transducer IDT) converts the electrical signal to acoustical signal, and is confined to the substrate surface propagation by the input interdigital transducer, output interdigital transducer reverts to the signal of telecommunication with acoustical signal, realize the conversion process of electricity-sound-electricity, finish signal of telecommunication processing procedure, obtain the electronic device of various uses.The effect of reflector is that the energy reflection with transducer terminal loss returns in the transducer.The physical dimension of the interdigital transducer on the piezoelectric substrate, for example interdigital bar height, pitch and number play an important role for the signal processing and the frequency response characteristic of a surface acoustic wave element.The designer of surface acoustic wave element is usually when surface acoustic wave element reaches the required frequency response of work, in the selection of the physical dimension of concentrating on surface acoustic wave element and piezoelectric substrate institute materials used.Yet existing surface acoustic wave element with interdigital transducer, its electrode are even overlapping electrode, and this design can not reduce the insertion loss of surface acoustic wave element effectively.
[summary of the invention]
At the problems referred to above, be necessary to provide a kind of and have than low insertion loss and the higher surface acoustic wave element of design freedom.
In addition, be necessary to provide a kind of making to have the method for the surface acoustic wave element higher than low insertion loss and design freedom.
A kind of surface acoustic wave element, it comprises a piezoelectric substrate, one first transducer and one second transducer, this first transducer and this second transducer are located on this piezoelectric substrate, and this first transducer and this second transducer acoustical coupling; Wherein, at least one transducer comprises two electrodes, and this two electrode surrounds helical form mutually side by side.
A kind of surface acoustic wave element manufacture method may further comprise the steps: a substrate is provided; Surperficial sputter one piezoelectric thin film layer at this substrate; At piezoelectric thin film layer surface applied one deck photoresist layer; One light shield is covered in this photoresist layer surface; With this light shield of rayed, form an exposure region on the photoresistance surface; After taking off light shield, remove the exposure photoresistance of exposure region, the exposed portions serve piezoelectric thin film layer, the part piezoelectric thin film layer that this exposes is a helical form; The part piezoelectric membrane laminar surface plating one deck conductive metal film that is remaining photoresistance and exposing; Flush away residue photoresistance and metallic diaphragm attached to it.
Compare prior art, the electrode of described surface acoustic wave element surrounds into a helical form alternately, thereby its overlap length is long, can effectively reduce the insertion loss.In addition, parameters such as the length of described spiral electrode, width and spacing, can constantly change in design, thus parameters such as the insertion loss of control surface acoustic elecment, frequency range and surface acoustic wave speed, thus the design freedom of raising surface acoustic wave element and application system thereof.
[description of drawings]
Fig. 1 is the perspective view of the surface acoustic wave element of preferred embodiment of the present invention;
Fig. 2 is the making schematic flow sheet of the surface acoustic wave element of preferred embodiment of the present invention.
[embodiment]
Preferred embodiment of the present invention discloses a kind of surface acoustic wave element 1, sees also Fig. 1, and this surface acoustic wave element 1 comprises substrate 10, piezoelectric thin film layer 20, first transducer 30 and second transducer 40.Substrate 10 is to be fabricated from a silicon, piezoelectric thin film layer 20 is formed on the upper surface of this substrate 10, this piezoelectric thin film layer 20 is to be made by zinc oxide (ZnOx), lithium niobate (LiNbOx), lithium titanate (LiTiOx) or lithium tantalate materials such as (LiTaOx), first transducer 30 has two different in nature electrode 32,34 and electric signal input ends 36, the material of two electrodes 32,34 can be gold, silver, copper or aluminium, it surrounds helical form mutually side by side, and electric signal input end 36 is positioned at a terminal of two electrodes 32,34.Wherein, apart from being preferably a surface acoustic wave wavelength, distance is preferably the surface acoustic wave wavelength half between the adjacent two different in nature electrodes between adjacent two same sex electrodes.Second transducer 40 is identical with first transducer, 30 structures, has two different in nature electrode 42,44 and electrical signals 46, and electrical signal 46 is positioned at a terminal of two electrodes 42,44.And first transducer 30 and 40 acoustical couplings of second transducer.
During surface acoustic wave element 1 work, the electric signal input end 36 of first transducer 30 receives the outside signal of telecommunication, because piezoelectric thin film layer 20 has piezoelectric property, the spiral electrode 32,34 of first transducer 30 becomes surface acoustic wave with the electrical signal conversion that receives, this surface acoustic wave is transmitted to second transducer 40 along piezoelectric thin film layer 20, the electrode 42,44 of second transducer 40 converts surface acoustic wave to the signal of telecommunication, by electrical signal 46 outputs of second transducer 40.
The electrode of the disclosed surface acoustic wave element of preferred embodiment of the present invention surrounds into a helical form alternately, thereby its overlap length is long, can effectively reduce the insertion loss.In addition, parameters such as the length of this surface acoustic wave element spiral electrode, width and spacing, can constantly change in design, thus parameters such as the insertion loss of control surface acoustic elecment, frequency range and surface acoustic wave speed, thus the design freedom of raising surface acoustic wave element and application system thereof.
See also Fig. 2, the manufacture method of this surface acoustic wave element 1 may further comprise the steps:
One silicon chip 10 at first is provided; Then this silicon chip 10 is placed in the vacuum chamber, with zinc oxide (ZnOx), lithium niobate (LiNbOx), lithium titanate (LiTiOx) or lithium tantalate (LiTaOx) is sputtered target material, is sputter gas with argon gas (Ar) with oxygen, at surperficial sputter one piezoelectric thin film layer 20 of this silicon chip 10, method for sputtering can be reactive dc sputtering (DC reactivesputtering) or reactive radio frequency sputter (RF reactive sputtering); At piezoelectric thin film layer 20 surface applied one deck photoresist layers 50; Then a light shield (figure does not show) is covered in this photoresist layer 50 surfaces; With laser light or this light shield of UV-irradiation, form an exposure region on the photoresistance surface; After taking off light shield, the photoresist layer 50 that exposes is placed in the developer solution, remove the exposure photoresistance 501 of exposure region, exposed portions serve piezoelectric thin film layer 201; Then utilize sputtering method at the part piezoelectric thin film layer 201 surface plating one deck conductive metal films 60 that remain photoresistance and expose, this metal can be gold, silver, copper or aluminium; Flush away residue photoresistance and metallic diaphragm 601 attached to it, then remaining metallic diaphragm is two electrodes of transducer 30,40, and this two electrode surrounds helical form mutually side by side, has just made described surface acoustic wave element 1 this moment.
Claims (10)
1. surface acoustic wave element, it is characterized in that: this surface acoustic wave element comprises a piezoelectric substrate and two transducers, and this two transducer is located on this piezoelectric substrate, and its mutual acoustical coupling, wherein at least one transducer comprises two electrodes, and this two electrode surrounds helical form mutually side by side.
2. surface acoustic wave element as claimed in claim 1 is characterized in that: this piezoelectric substrate comprises that a substrate and is located at on-chip piezoelectric thin film layer.
3. surface acoustic wave element as claimed in claim 2 is characterized in that: the material of this substrate is a silicon.
4. surface acoustic wave element as claimed in claim 2 is characterized in that: the material of this piezoelectric thin film layer is a kind of in zinc oxide, lithium niobate, lithium titanate or the lithium tantalate.
5. surface acoustic wave element as claimed in claim 1 is characterized in that: the material of this electrode is a kind of in gold, silver, copper or the aluminium.
6. surface acoustic wave element as claimed in claim 1 is characterized in that: distance is a surface acoustic wave wavelength between these adjacent two same sex electrodes.
7. surface acoustic wave element as claimed in claim 1 is characterized in that: distance is half surface acoustic wave wavelength between this adjacent two different in nature electrode.
8. surface acoustic wave element as claimed in claim 1 is characterized in that: this two transducer includes two electrodes, and this two electrode surrounds helical form mutually side by side.
9. surface acoustic wave element manufacture method is characterized in that may further comprise the steps:
One substrate is provided;
Surperficial sputter one piezoelectric thin film layer at this substrate;
At piezoelectric thin film layer surface applied one deck photoresist layer;
One light shield is covered in this photoresist layer surface;
With this light shield of rayed, form an exposure region on the photoresistance surface;
After taking off light shield, remove the exposure photoresistance of exposure region, the exposed portions serve piezoelectric thin film layer, the part piezoelectric thin film layer that this exposes is a helical form;
The part piezoelectric membrane laminar surface plating one deck conductive metal film that is remaining photoresistance and exposing;
Flush away residue photoresistance and metallic diaphragm attached to it.
10. surface acoustic wave element manufacture method as claimed in claim 9, wherein this method for sputtering is reactive dc sputtering or reactive radio frequency sputter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100369163A CN1921301B (en) | 2005-08-26 | 2005-08-26 | Surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100369163A CN1921301B (en) | 2005-08-26 | 2005-08-26 | Surface acoustic wave element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1921301A true CN1921301A (en) | 2007-02-28 |
| CN1921301B CN1921301B (en) | 2010-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100369163A Expired - Fee Related CN1921301B (en) | 2005-08-26 | 2005-08-26 | Surface acoustic wave element |
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| CN (1) | CN1921301B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103124166A (en) * | 2009-02-27 | 2013-05-29 | 精工爱普生株式会社 | Surface acoustic wave resonator and surface acoustic wave oscillator |
| US20190091683A1 (en) * | 2016-03-15 | 2019-03-28 | Centre National De La Recherche Scientifique | Acoustic tweezers |
| CN111162749A (en) * | 2020-01-08 | 2020-05-15 | 武汉大学 | Novel resonator structure |
| CN112563699A (en) * | 2021-02-25 | 2021-03-26 | 成都频岢微电子有限公司 | Miniaturized spiral surface-mountable band-pass filter based on multilayer PCB structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023511246A (en) * | 2019-12-18 | 2023-03-17 | ユニヴェルシテ ド リール | electroacoustic equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2860211B2 (en) * | 1992-06-29 | 1999-02-24 | 毅 池田 | Noise filter |
| US5815900A (en) * | 1995-03-06 | 1998-10-06 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a surface acoustic wave module |
| JP3411908B2 (en) * | 1999-11-30 | 2003-06-03 | ティーディーケイ株式会社 | Surface acoustic wave device and method of manufacturing the same |
| JP3603826B2 (en) * | 2001-09-17 | 2004-12-22 | 株式会社村田製作所 | Spiral line assembly element, resonator, filter, duplexer and high frequency circuit device |
| US6960968B2 (en) * | 2002-06-26 | 2005-11-01 | Koninklijke Philips Electronics N.V. | Planar resonator for wireless power transfer |
| JP4291164B2 (en) * | 2004-01-08 | 2009-07-08 | 富士通メディアデバイス株式会社 | Surface acoustic wave device |
-
2005
- 2005-08-26 CN CN2005100369163A patent/CN1921301B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103124166A (en) * | 2009-02-27 | 2013-05-29 | 精工爱普生株式会社 | Surface acoustic wave resonator and surface acoustic wave oscillator |
| CN103124166B (en) * | 2009-02-27 | 2015-11-18 | 精工爱普生株式会社 | SAW (Surface Acoustic Wave) resonator and surface acoustic wave oscillator |
| US20190091683A1 (en) * | 2016-03-15 | 2019-03-28 | Centre National De La Recherche Scientifique | Acoustic tweezers |
| US11731127B2 (en) * | 2016-03-15 | 2023-08-22 | Centre National De La Recherche Scientifique | Acoustic tweezers |
| CN111162749A (en) * | 2020-01-08 | 2020-05-15 | 武汉大学 | Novel resonator structure |
| CN112563699A (en) * | 2021-02-25 | 2021-03-26 | 成都频岢微电子有限公司 | Miniaturized spiral surface-mountable band-pass filter based on multilayer PCB structure |
| CN112563699B (en) * | 2021-02-25 | 2021-05-11 | 成都频岢微电子有限公司 | Miniaturized spiral surface-mountable band-pass filter based on multilayer PCB structure |
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| Publication number | Publication date |
|---|---|
| CN1921301B (en) | 2010-09-29 |
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Granted publication date: 20100929 Termination date: 20160826 |