CN111162749A - Novel resonator structure - Google Patents
Novel resonator structure Download PDFInfo
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- CN111162749A CN111162749A CN202010016433.1A CN202010016433A CN111162749A CN 111162749 A CN111162749 A CN 111162749A CN 202010016433 A CN202010016433 A CN 202010016433A CN 111162749 A CN111162749 A CN 111162749A
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 7
- 235000019687 Lamb Nutrition 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000007774 positive electrode material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
Abstract
The invention provides a novel resonator structure which comprises a positive electrode, a negative electrode, a piezoelectric layer and a substrate. The positive electrodes and the negative electrodes are sequentially and alternately arranged and are arranged on the piezoelectric layer, and the piezoelectric layer is arranged on the substrate; the positive electrode and the negative electrode are both strip-shaped structures which are distributed along spiral curves extending clockwise or anticlockwise outwards at the center and the area near the center. The structure can be used for lamb wave, surface acoustic wave and ultrahigh frequency resonator acoustic wave resonators, and can improve the electromechanical coupling coefficient and quality factor of the resonators.
Description
Technical Field
The invention belongs to the field of MEMS resonators, and particularly relates to a novel resonator structure.
Background
The rapid development of wireless and mobile communication systems has driven rapid innovation in component performance and system integration techniques. In order to achieve faster signal processing and reduce the complexity of integration, micro-electromechanical system (MEMS) resonators that are miniaturized and compatible with CMOS technology become a new generation of core devices, and thus high performance MEMS resonator technology has a high demand as a fundamental component of the radio frequency front end of advanced wireless communication systems.
MEMS radio frequency devices play an extremely important role in the field of communications. At present, the commonly used band-pass filters in the radio frequency system mainly include microwave dielectric ceramic filters, Surface Acoustic Wave (SAW) filters and film bulk acoustic wave (FBAR) filters. With the rapid development of wireless communication towards multiple frequency bands, multiple systems and multiple protocols, the whole wireless communication system is smaller and smaller, the integration level and the communication frequency are higher and higher, the frequency resources are more and more crowded, the requirements on the performance of the filter are increased, however, the performance of the filter depends on the performance of the resonator, and therefore, the performance of the resonator is of great importance.
The resonators based on piezoelectric theory at present are mainly surface acoustic wave resonators (SAW), Film Bulk Acoustic Resonators (FBAR), Lamb wave resonators (Lamb wave Resonator), and ultra high frequency resonators (XBAR). The most critical properties of a resonator as such are the electromechanical coupling coefficient and the quality factor (Q value). The electromechanical coupling coefficient of the resonator determines the bandwidth of the filter, and its quality factor directly affects its in-band insertion loss and steepness of the filter skirt. Thus, a resonator assembly that achieves a high quality factor plays a critical role for low insertion loss, steep filter skirts, high out-of-band rejection filters, especially high frequency resonators. So far, related designers have also proposed design methods for improving the quality factor of the resonator, but the problems of complex process, difficult processing and the like generally exist. Therefore, a method which is simple in process and can effectively improve the quality factor of the resonator is urgently needed.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a novel resonator structure capable of effectively improving the quality factor of a resonator.
Specifically, the invention proposes the following scheme:
a novel resonator structure, characterized in that: a positive electrode, a negative electrode, a piezoelectric layer, and a substrate. The positive electrodes and the negative electrodes are sequentially and alternately arranged and are arranged on the piezoelectric layer, and the piezoelectric layer is arranged on the substrate;
further, the substrate may preferably be a silicon, sapphire substrate, or SOI substrate.
Further, the substrate can be a substrate with an etching cavity or a substrate without etching cavity;
the etching cavity is etched in a filling way through the sacrificial layer or is etched in a back direction; the silicon substrate structure with the etched cavity is used for the ultrahigh frequency resonator and the lamb wave resonator, and the silicon substrate structure without the etched cavity is used for the surface acoustic wave resonator;
further, the piezoelectric layer is preferably a thin film material having piezoelectric properties of lithium niobate, lithium tantalate, aluminum nitride, scandium-doped aluminum nitride.
Further, the pattern of the piezoelectric layer is a regular or irregular pattern such as a circle, a pentagon, a hexagon and the like.
Furthermore, the positive electrode and the negative electrode are both strip-shaped structures which are distributed along a spiral curve extending outwards clockwise or anticlockwise at the center and the area near the center.
Further, the spiral curve may be an archimedean spiral, a chain spiral, a spiral broken line.
Further, the spiral folding line may preferably be a quadrangular spiral polygonal spiral structure, a pentagonal spiral polygonal spiral structure, or a hexagonal spiral polygonal spiral structure.
Further, the spacing between the positive electrodes may be M times the width of the positive electrodes; the distance between the negative electrodes can be M times of the width of the negative electrodes, and M is more than or equal to 1 and less than or equal to 50.
Further, the positive electrode material and the negative electrode material may preferably be a metal material such as molybdenum, aluminum, platinum, gold, or the like.
The novel resonator structure provided by the invention can effectively reduce the pseudo mode of the resonator, improve the electromechanical coupling coefficient of the resonator, and realize a high-performance resonator with high quality factor, large bandwidth and high frequency.
Drawings
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings, in which:
FIG. 1: is a top view of a resonator structure according to the invention with strip-shaped electrodes in an archimedean spiral distribution as an example.
Wherein 101-negative electrode, 102-positive electrode;
FIG. 2: the strip electrodes of the invention are schematically distributed in an archimedes spiral as the cross section of the resonator structure of the embodiment.
Wherein 101-negative electrode, 102-positive electrode, 103-piezoelectric film layer, 104-substrate layer;
FIG. 3: the strip electrodes of the invention are distributed in pentagonal spiral fold lines as the top view of the resonator structure of the embodiment.
Wherein 101-negative electrode, 102-positive electrode;
FIG. 4: the top view of the resonator structure of the embodiment is that the strip electrodes are distributed in a hexagonal spiral broken line.
Wherein 101-negative electrode, 102-positive electrode;
Detailed Description
In order to more clearly illustrate the present invention and/or the technical solutions in the prior art, the following will describe embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
The specific implementation mode of the invention is a novel resonator structure, which is characterized in that: a positive electrode, a negative electrode, a piezoelectric layer, and a substrate. The positive electrodes and the negative electrodes are sequentially and alternately arranged and are arranged on the piezoelectric layer, and the piezoelectric layer is arranged on the substrate;
in a specific embodiment, the substrate is a silicon substrate.
In a specific embodiment, the substrate is a substrate with an etched cavity.
The etching cavity is etched in a filling way through the sacrificial layer or is etched in a back direction; the silicon substrate structure with the etched cavity is used for an ultrahigh frequency resonator and a lamb wave resonator.
In a specific embodiment, the piezoelectric layer is preferentially lithium niobate.
In a specific embodiment, the pattern of the piezoelectric layer is circular, pentagonal or hexagonal.
In a specific embodiment, the positive electrode and the negative electrode are in a strip structure and are distributed along a spiral curve extending counterclockwise and outwards at the center of the spiral line and the area near the center.
In a specific embodiment, the spiral curve may be an archimedean spiral, a chain spiral, or a spiral broken line.
In a specific embodiment, the spiral broken line is a quadrilateral spiral polygonal spiral structure, a pentagonal spiral polygonal spiral structure, or a hexagonal spiral polygonal spiral structure.
In particular embodiments, the positive and negative electrode materials may preferably be molybdenum metal materials.
Fig. 1 and 2 are a top view and a cross-sectional view, respectively, of a resonator structure with archimedes spiral distribution of strip electrodes embodying the invention, comprising: the piezoelectric material (103) is positioned above a substrate (104) which is provided with a cavity back to the etching, and strip-shaped negative electrodes (101) and strip-shaped positive electrodes (102) which are distributed along an Archimedes spiral line are deposited on the upper surface of the piezoelectric material (103). The distance between two adjacent electrodes is five times of the width of the electrodes. The piezoelectric material is excited by the alternating positive and negative electric fields to generate high-frequency sound waves, and further resonance response is triggered. The resonator is coupled with the piezoelectric coefficients e _24 and e _15 of the piezoelectric material (103), so that standing waves are formed in the piezoelectric material (103), the electromechanical conversion efficiency is effectively increased, and the electromechanical coupling coefficient of the resonator is improved; the electrodes are distributed along the spiral line, so that energy can be effectively limited between the electrodes, energy dissipation is reduced, a pseudo mode is inhibited, and a quality factor value (namely a Q value) of the resonator is improved.
Fig. 3 is a resonator structure of a resonator structure in which strip-shaped electrodes are distributed in a pentagonal spiral fold line as an example according to the present invention, and is different from fig. 1 in that the spiral structure of the distribution of the strip-shaped electrodes is a pentagonal spiral fold line, and a distance between two adjacent electrodes is 1 times of an electrode width M.
Fig. 4 is a resonator structure of a resonator structure in which bar-shaped electrodes are distributed with hexagonal spiral broken lines as an example according to the present invention, and is different from fig. 1 in that the spiral structure of the distribution of the bar-shaped electrodes is a hexagonal spiral broken line.
It should be understood that parts of the specification not set forth in detail are well within the prior art.
It should be understood that the above description of the preferred embodiments is given for clarity and not for any purpose of limitation, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A novel resonator structure, comprising: a positive electrode, a negative electrode, a piezoelectric layer, and a substrate; the positive electrodes and the negative electrodes are sequentially and alternately arranged and are arranged on the piezoelectric layer, and the piezoelectric layer is arranged on the substrate; the positive electrode and the negative electrode are both strip-shaped structures which are distributed along spiral curves extending clockwise or anticlockwise outwards at the center and the area near the center.
2. The novel resonator structure according to claim 1, characterized in that said spiral curve is a spiral curve, a spiral broken line; the spiral broken line is of a polygonal spiral structure.
3. The novel resonator structure according to claim 2, characterized in that the spiral fold line is a quadrangular, pentagonal, hexagonal, polygonal spiral structure.
4. The novel resonator structure according to claim 2, characterized in that the helical curve is an archimedean helix, a chain spiral.
5. The novel resonator structure of claim 1, characterized in that the substrate is a silicon, sapphire substrate or SOI substrate.
6. The novel resonator structure according to claim 1, characterized in that the substrate is a substrate with etched cavities or a substrate without etched cavities; the etching cavity is etched in a filling way through the sacrificial layer or is etched in a back direction; the substrate structure with the etched cavity is used for the ultrahigh frequency resonator and the lamb wave resonator, and the substrate structure without the etched cavity can be used for the surface acoustic wave resonator.
7. The novel resonator structure according to claim 1, characterized in that the piezoelectric material is a thin film material having piezoelectric properties, and the shape of the piezoelectric material is a regular pattern or an irregular pattern.
8. The novel resonator structure of claim 7, characterized in that the thin film material is lithium niobate, lithium tantalate, aluminum nitride, scandium-doped aluminum nitride; the regular patterns are circular, pentagonal and hexagonal.
9. The novel resonator structure according to claim 1, characterized in that the positive and negative electrodes are made of metal material, the distance between the electrodes is M times the width of the electrodes, M is larger than or equal to 1 and smaller than or equal to 50.
10. The novel resonator structure according to claim 9, characterized in that the metallic material is molybdenum, aluminum, platinum, gold.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010016433.1A CN111162749A (en) | 2020-01-08 | 2020-01-08 | Novel resonator structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010016433.1A CN111162749A (en) | 2020-01-08 | 2020-01-08 | Novel resonator structure |
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| CN111162749A true CN111162749A (en) | 2020-05-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206651A (en) * | 2021-06-04 | 2021-08-03 | 电子科技大学 | Lamb wave resonator with high electromechanical coupling coefficient and preparation method thereof |
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| JP2002152007A (en) * | 2000-11-15 | 2002-05-24 | Hitachi Ltd | Lamb wave type elastic wave resonator |
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| WO2011006277A1 (en) * | 2009-07-14 | 2011-01-20 | 清华大学 | Piezoelectric speaker adopting interdigital or spiral electrode |
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| JP2011254286A (en) * | 2010-06-02 | 2011-12-15 | Seiko Epson Corp | Laminated structure, bending vibration piece, resonator, oscillator, and electronic device |
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| US20190386633A1 (en) * | 2018-06-15 | 2019-12-19 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate |
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2020
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| JPH0416012A (en) * | 1990-05-10 | 1992-01-21 | Takeshi Ikeda | Noise filter |
| US5430344A (en) * | 1991-07-18 | 1995-07-04 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having ceramic substrate formed essentially of stabilized zirconia |
| JP2002152007A (en) * | 2000-11-15 | 2002-05-24 | Hitachi Ltd | Lamb wave type elastic wave resonator |
| CN1921301A (en) * | 2005-08-26 | 2007-02-28 | 鸿富锦精密工业（深圳）有限公司 | Surface acoustic wave element and method for making same |
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| WO2011006277A1 (en) * | 2009-07-14 | 2011-01-20 | 清华大学 | Piezoelectric speaker adopting interdigital or spiral electrode |
| JP2011254286A (en) * | 2010-06-02 | 2011-12-15 | Seiko Epson Corp | Laminated structure, bending vibration piece, resonator, oscillator, and electronic device |
| US20190386633A1 (en) * | 2018-06-15 | 2019-12-19 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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Effective date of registration: 20201222 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Applicant after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Applicant before: WUHAN University |
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Application publication date: 20200515 |