CN112290904A - Ultrahigh frequency resonator based on embedded electrode - Google Patents
Ultrahigh frequency resonator based on embedded electrode Download PDFInfo
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- CN112290904A CN112290904A CN202011178454.XA CN202011178454A CN112290904A CN 112290904 A CN112290904 A CN 112290904A CN 202011178454 A CN202011178454 A CN 202011178454A CN 112290904 A CN112290904 A CN 112290904A
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- resonator
- piezoelectric layer
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- embedded
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- 238000010168 coupling process Methods 0.000 claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 230000001788 irregular Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 11
- 230000001808 coupling effect Effects 0.000 abstract description 4
- 235000019687 Lamb Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The ultrahigh frequency resonator based on the embedded electrodes is characterized in that part or all of the electrodes (101, 102) are deposited in the piezoelectric layer (103), so that an electric field in the piezoelectric layer (103) is enhanced and distributed more uniformly, the electric field in the thickness direction and the transverse direction of the piezoelectric layer (103) generates stronger coupling effect, and the quality factor and the electromechanical coupling coefficient of the resonator are increased.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to an ultrahigh frequency resonator based on an embedded electrode.
Background
The 5G/6G era has come, and the development of wireless and mobile communication systems is pushed to the front of the era again, which has a rapidly increased demand for multiband high-frequency filters, and the performance of the filters depends on the performance of the resonators, thereby placing higher demands on the performance of the piezoelectric resonators. The most critical properties of a resonator as such are the electromechanical coupling coefficient and the quality factor (Q value). The electromechanical coupling coefficient of the resonator determines the bandwidth of the filter, and its quality factor directly affects its in-band insertion loss and steepness of the filter skirt. Therefore, a resonator assembly that achieves a high quality factor plays a crucial role for low insertion loss, steep filter skirts, and high out-of-band rejection filters.
Surface Acoustic Wave resonators (Surface Acoustic Wave resonators) and Bulk Acoustic Wave resonators (Bulk Acoustic Wave resonators) have dominated the mainstream market by their unique advantages. However, a Surface Acoustic Wave (SAW) resonator has difficulty in maintaining excellent performance in a high frequency band due to its low phase velocity, a limitation in photolithography, and the like. Bulk acoustic wave resonators (BAW) are widely used in the high frequency market due to their low insertion loss and good power handling capability, particularly thin Film Bulk Acoustic Resonators (FBAR) among them, with high quality factor (Q) and high electromechanical coupling coefficient (K)2 eff). However, the resonant frequency of FBAR is determined by the thickness of the piezoelectric film, and therefore it is difficult to realize multiband integration on a single wafer. The Lamb Wave Resonator (LWR) can break through the frequency limit faced by SAW, and can obtain lamb wave resonators with different frequencies by adjusting the distance between the interdigital fingers, so that the frequency modulation of the same wafer is realized, but the low quality factor of the lamb wave resonators is always a key factor limiting the large-scale popularization of the lamb wave resonators.
Disclosure of Invention
The invention provides an ultrahigh frequency resonator based on an embedded electrode, wherein part or all of the electrode is deposited in a piezoelectric layer, so that an electric field in the piezoelectric layer is enhanced and distributed more uniformly, and the electric field in the thickness direction and the transverse direction of the piezoelectric layer generates a stronger coupling effect, thereby increasing the quality factor and the electromechanical coupling coefficient of the resonator.
According to an aspect of an embodiment of the invention, a part or all of the uhf resonator electrodes are embedded in the piezoelectric layer to increase the quality factor and the electromechanical coupling coefficient of the resonator.
In some examples, the depth to which the electrodes are embedded in the piezoelectric layer is between 1% and 100% of the thickness of the piezoelectric layer.
In some examples, the electrode cross-sectional shape is a circle, an ellipse, a regular polygon, or an irregular polygon.
In some examples, the cross-sectional shape of the piezoelectric layer is circular, a regular polygon, or an irregular polygon.
In some examples, two adjacent electrodes are spaced apart by more than two acoustic wavelengths.
In some examples, the material of the electrode is platinum, molybdenum, copper, aluminum, or gold.
In some examples, the piezoelectric layer material is lithium niobate, lithium tantalate, or aluminum nitride.
In some examples, the electrodes are arranged in a regular pattern or an irregular pattern.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below.
Fig. 1 is a schematic cross-sectional structure diagram of a lamb wave resonator of the prior art.
Fig. 2 is a schematic cross-sectional structure diagram of an embedded electrode-based uhf resonator according to a first embodiment of the present invention.
Fig. 3 is a schematic cross-sectional structure diagram of an embedded electrode-based uhf resonator according to a second embodiment of the present invention.
Fig. 4 is a top view of an embedded electrode based uhf resonator according to a third embodiment of the present invention.
Fig. 5 is a top view of an embedded electrode based uhf resonator according to a fourth embodiment of the present invention.
Fig. 6 is a top view of an embedded electrode based uhf resonator according to a fifth embodiment of the present invention.
Fig. 7 is a schematic impedance curve diagram of a resonator in which all electrodes having a rectangular cross section are embedded in a piezoelectric layer having a square cross section according to an embodiment of the present invention.
Fig. 8 is a graph showing the impedance curves of a prior art resonator and a resonator in which an electrode 2/3 having a circular cross-sectional shape is embedded in a piezoelectric layer having a square cross-sectional shape according to another embodiment of the present invention.
Detailed Description
Fig. 1 is a schematic cross-sectional structure diagram of a two-dimensional lamb wave resonator of the prior art. As shown in fig. 1, a piezoelectric layer 103 is disposed on a substrate 104, and electrodes 101 and 102 are uniformly arranged on an upper surface of the piezoelectric layer 103, and the electrodes 101 and 102 are divided into two groups: one set applying a positive voltage, referred to as the positive electrode 102; the other set applies a negative voltage, called negative electrode 101, which are all distributed across the surface of the piezoelectric layer 103.
The present invention provides an ultra high frequency resonator based on embedded electrodes, depositing part or all of the electrodes 101, 102 in the piezoelectric layer 103. Fig. 2 shows a schematic cross-sectional structure of a uhf resonator with electrodes 101, 102 fully embedded in the piezoelectric layer 103. Fig. 3 shows a schematic cross-sectional structure of a uhf resonator with the electrodes 101, 102 partially embedded in the piezoelectric layer 103. The invention is not limited to the depth to which the electrodes 101, 102 are embedded in the piezoelectric layer 103, and for example 2/3 of the electrodes 101, 102 may be embedded in the piezoelectric layer 103.
The shape of the piezoelectric layer 103 and the shape of the electrodes 101, 102 are not limited in the present invention. The cross-sectional shape of the piezoelectric layer 103 may be circular, or regular polygons such as square (see fig. 4), rectangle (see fig. 5 and 6), or irregular polygons. The cross-section of the electrodes 101, 102 may be circular (see fig. 4), or regular polygon such as square (see fig. 5), rectangle (see fig. 6), or irregular polygon.
The electrodes 101, 102 may be arranged in a regular pattern (e.g., circular, square, rectangular, diamond) or irregular pattern.
In addition, the substrate 104 is provided with etched cavities, which are etched through sacrificial layer fill or are etched back. The material of the present invention is not limited, the substrate 104 may be a silicon, sapphire substrate or SOI substrate, the piezoelectric layer 103 may be a piezoelectric material such as lithium niobate, lithium tantalate or aluminum nitride, and the electrodes 101 and 102 may be made of a metal such as platinum, molybdenum, copper, aluminum or gold.
Further, the pitch of the adjacent electrode electrodes 101, 102 may be larger than twice the acoustic wave wavelength.
After the positive and negative voltages are alternately applied to the electrodes 101 and 102 in the piezoelectric layer 103, multidirectional electric field coupling can be generated inside the piezoelectric layer 103, and the electric field generated by the arrangement mode that the electrodes 101 and 102 are embedded into the piezoelectric layer 103 enables the e inside the piezoelectric layer 10315And e24Coupling is generated, as given by the classical piezoelectric equation:
T＝Cs-eE
D＝εE+eS
wherein:
t is the stress in the piezoelectric layer; c is the elastic coefficient of the piezoelectric material; s is the strain of the piezoelectric material; e is the piezoelectric stress constant of the piezoelectric material; e is the electric field strength; d is the electrical shift. Increase of electric field enables e15And e24The coupling of the resonator is strengthened, so that the electromechanical coupling coefficient of the resonator is improved; the arrangement of the electrodes 101 and 102 embedded in the piezoelectric layer 103 of the present invention enhances and distributes the electric field in the piezoelectric layer 103 more uniformly, so that the thickness direction and the transverse direction of the piezoelectric layer 103 generate stronger coupling effect, thereby increasing the quality factor and the electromechanical coupling coefficient of the resonator.
FIG. 7 shows that all electrodes having a rectangular cross-sectional shape are embedded in a square cross-sectional shapeImpedance curves of the resonators of the piezoelectric layer of (a); fig. 8 shows the impedance curves of a prior art resonator and a resonator with a piezoelectric layer with a square cross-sectional shape embedded with electrodes 2/3 with a circular cross-sectional shape. Series resonant frequency fsAnd parallel resonant frequency fpThe frequency interval Δ f between them determines the electromechanical coupling coefficient K of the resonator2 effCan be calculated by the following formula:
the prior art resonator was modeled to be 31.277% with a Q value of 71. Electromechanical coupling coefficient K of a resonator according to the invention in which the electrodes 101, 102 are not fully embedded in the piezoelectric layer 1032 effIs 34.655%, and the Q value is 241, K2 effThe increase is 3.378%, and the Q value is increased by 170%. Electromechanical coupling coefficient K of a resonator with electrodes 101, 102 completely embedded in the piezoelectric layer 1032 effIs 38.986%, the Q value is 600, K2 effThe increase was 4.331%, and the Q value increased 529.
The ultrahigh frequency resonator of the invention deposits part or all of the electrodes 101 and 102 in the piezoelectric layer 103, so that the electric field in the piezoelectric layer 103 is enhanced and distributed more uniformly, and the electric field in the thickness direction and the transverse direction of the piezoelectric layer 103 generates stronger coupling effect, thereby increasing the quality factor and the electromechanical coupling coefficient of the resonator. Compared with the resonator in the prior art, the resonator can reach very high resonant frequency, high electromechanical coupling coefficient is realized under very high resonant frequency, quality factor is improved, and ultrahigh frequency and high electromechanical coupling coefficient have performance which is determined for the performance of a subsequently built filter, which means that 5GHz can be broken through, and a chip with higher frequency and higher performance is realized.
Claims (8)
1. A uhf resonator, wherein part or all of the resonator electrodes are embedded in a piezoelectric layer to increase the quality factor and electromechanical coupling coefficient of the resonator.
2. The uhf resonator of claim 1, wherein the depth of the electrode embedded in the piezoelectric layer is between 1% and 100% of the thickness of the piezoelectric layer.
3. The uhf resonator of claim 1, wherein the electrode cross-sectional shape is circular, elliptical, a regular polygon, or an irregular polygon.
4. The uhf resonator of claim 1, wherein the piezoelectric layer cross-sectional shape is a circle, a regular polygon, or an irregular polygon.
5. The uhf resonator of claim 1, wherein the spacing between two adjacent electrodes is greater than two times the wavelength of the acoustic wave.
6. The uhf resonator of claim 1, wherein the material of the electrodes is platinum, molybdenum, copper, aluminum, or gold.
7. The uhf resonator of claim 1, wherein the piezoelectric layer material is lithium niobate, lithium tantalate, or aluminum nitride.
8. The uhf resonator of claim 1, wherein the electrodes are arranged in a regular pattern or an irregular pattern.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011178454.XA CN112290904A (en) | 2020-10-29 | 2020-10-29 | Ultrahigh frequency resonator based on embedded electrode |
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| CN202011178454.XA CN112290904A (en) | 2020-10-29 | 2020-10-29 | Ultrahigh frequency resonator based on embedded electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968685A (en) * | 2021-02-05 | 2021-06-15 | 武汉大学 | Bulk acoustic wave resonator with trench structure |
| CN112994647A (en) * | 2021-02-05 | 2021-06-18 | 武汉大学 | Ultrahigh frequency resonator with ring electrode structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170179923A1 (en) * | 2015-12-18 | 2017-06-22 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
| CN107567682A (en) * | 2014-12-17 | 2018-01-09 | Qorvo美国公司 | Lamb wave device and manufacture method with ripple limiting structure |
| US20180219525A1 (en) * | 2017-01-30 | 2018-08-02 | Zhuohui Chen | Surface acoustic wave device |
| WO2019154345A1 (en) * | 2018-02-11 | 2019-08-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator and manufacturing method therefor |
| CN110166012A (en) * | 2019-05-15 | 2019-08-23 | 上海科技大学 | The radio frequency piezo-electric resonator and preparation method thereof of two dimension coupling |
| CN110880922A (en) * | 2019-11-18 | 2020-03-13 | 武汉大学 | Two-dimensional ultrahigh frequency resonator |
-
2020
- 2020-10-29 CN CN202011178454.XA patent/CN112290904A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107567682A (en) * | 2014-12-17 | 2018-01-09 | Qorvo美国公司 | Lamb wave device and manufacture method with ripple limiting structure |
| US20170179923A1 (en) * | 2015-12-18 | 2017-06-22 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
| US20180219525A1 (en) * | 2017-01-30 | 2018-08-02 | Zhuohui Chen | Surface acoustic wave device |
| WO2019154345A1 (en) * | 2018-02-11 | 2019-08-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator and manufacturing method therefor |
| CN110166012A (en) * | 2019-05-15 | 2019-08-23 | 上海科技大学 | The radio frequency piezo-electric resonator and preparation method thereof of two dimension coupling |
| CN110880922A (en) * | 2019-11-18 | 2020-03-13 | 武汉大学 | Two-dimensional ultrahigh frequency resonator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968685A (en) * | 2021-02-05 | 2021-06-15 | 武汉大学 | Bulk acoustic wave resonator with trench structure |
| CN112994647A (en) * | 2021-02-05 | 2021-06-18 | 武汉大学 | Ultrahigh frequency resonator with ring electrode structure |
| CN112968685B (en) * | 2021-02-05 | 2023-04-25 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator with trench structure |
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