CN1906725A - Ion source with modified gas delivery - Google Patents
Ion source with modified gas delivery Download PDFInfo
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- CN1906725A CN1906725A CNA2004800374220A CN200480037422A CN1906725A CN 1906725 A CN1906725 A CN 1906725A CN A2004800374220 A CNA2004800374220 A CN A2004800374220A CN 200480037422 A CN200480037422 A CN 200480037422A CN 1906725 A CN1906725 A CN 1906725A
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- anode
- ion source
- end wall
- projection
- source according
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
- H01J27/146—End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
An ion source (100) for producing a beam of ions from a plasma is disclosed. A plasma is created at the centre of an anode (112) by collisions between energetic electrons and molecules of an ionizable gas. The electrons are sourced from a cathode filament 111 and are accelerated to the anode (112) by an applied electric potential. A projection (123) of the anode and a magnetic field having an axis aligned with the axis of the anode act together to concentrate the flow of electrons to the centre of the anode (112). The ionizable gas is introduced into an ionization region (113) of the ion source (100) at the point of concentrated electron flow, either through channels (125) in the side wall of the anode (112) or through a gas delivery tube extending into the ionization region through the open end of the ion source. Ions created in the ionization region are expelled from the ion source as an ion beam centred on the axis of the magnetic field. The anode (112) includes a cavity (127) that receives a cooling fluid.
Description
Technical field
The present invention relates to be used to produce the ion source of ion beam.But the present invention develops by utilizing no grid extension ion source (gridless open ended ion source), and in this conduct with particular reference to describing.It will be apparent for a person skilled in the art that scope of the present invention can comprise the ion source of other type.
Background technology
Ion source in space propultion, but recently more and more in industrial treatment, find it such as the ion assisted deposition (IAD) of film coating.In IAD handles, thereby be directed into the multiviscosisty that causes the coating material when coating material deposits on the target substrate from ionogenic ion beam.This process occurs in pressure rating and is in 10
-2In the vacuum tank of Pa.
In typical ion source, electronics is pulled to anode by ionizable gas from cathode filament.Collision between gas molecule and the high energy electron causes ionization, and produces plasma in some cases.As in the conventional ion sources of no grid type ion source, will be configured as ion beam from the ion that ion source quickens a kind of thereby apply magnetic field across plasma.In a kind of specific no grid type ion source that is known as the end hall ion source, the axis in magnetic field aligns with electromotive force between negative electrode and the anode.The charged particle that causes alternately in electric field and magnetic field is generally being followed magnetic field line.Anode typical case in these devices is the annular with outward-dipping inside diameter, has the isoionic main body in the border of the cathode wall of being formed on.
But the applicant has carried out development to no grid extension ion source and has been illustrated in the Australian Patent No.749256 that authorizes, and its full content is incorporated herein by reference.In this patent, the ion source with big stability and big range of operating parameters is illustrated.Improved performance by introducing ionogenic gas at the regional area of high electron density.Electrically contact and provide the focus and the gas vent parts that are used for gas is directed to ionized space of electrode from its outstanding conductive prominence with anode.
The problem that structure had that occurs in the above-mentioned patent is, because the hole of gas service duct is formed in the spout member self, so when gas was introduced in the ionogenic ionized space, described gas was directed leaving described spout member, and therefore away from electron density.Therefore, gas efficiency need not to be maximized.
Other problem is, because spout member has been concentrated electric flux, is applied to most of heat load on the anode so it has received.But gas pipeline passes spout member, therefore makes the water that is difficult to provide enough cool off described projection.
Summary of the invention
In first aspect, the present invention is intended to a kind of ion source, this ion source comprises the negative electrode that produces electronics, anode, ionized space between described negative electrode and the anode, be used for ionogenic gas guiding is entered the gas service duct of described ionized space, be used between described negative electrode and described anode, producing the device of electrical potential difference, thereby cause the electron stream that produces by described negative electrode towards described anode, described electron stream passes described ionized space basically and causes described ionisation of gas, described electrical potential difference is also as discharging the ion that produces from described ion source described ionized space, wherein said anode comprises end wall, extend and outward-dipping sidewall on cathodic direction at cathode direction from end wall from end wall, thereby make the tapered basically ionized space of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at cathodic openend, wherein said gas service duct comprises one or more passages that extend through described anode side walls, and each described passage terminates in and is close to the place, hole that described end wall is provided with basically.
Preferably, described ion source also comprises the conductive prominence that extends and electrically contact with end wall from end wall.
Preferably, each passage is roughly extending through described sidewall on the direction of end wall.
On the other hand, the present invention is intended to a kind of ion source, this ion source comprises the negative electrode that produces electronics, anode, ionized space between described negative electrode and the anode, be used for ionogenic gas guiding is entered the gas service duct of described ionized space, be used between described negative electrode and described anode, producing the device of electrical potential difference, thereby produce the electron stream that produces by described negative electrode towards described anode, described electron stream passes described ionized space basically and causes described ionisation of gas, described electrical potential difference is also as discharging the ion that is created in the described ionized space from described ion source, wherein said anode comprises end wall, extend and outward-dipping sidewall on cathodic direction at cathode direction from end wall from end wall, thereby make the tapered basically ionized space of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at cathodic openend, wherein said gas service duct comprises one or more pipes that extend into described ionized space, and each pipe terminates in the place, hole that the described end wall of next-door neighbour is provided with.
Preferably, each pipe extends into ionized space from the openend of ionized space.Preferably, each pipe comprises non-conducting material.
On the other hand, the present invention is intended to a kind of ionogenic anode that is used for, described anode comprises end wall, extend and outward-dipping sidewall on direction from described end wall away from end wall, thereby make the tapered basically zone of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at the openend with respect to the anode one end place of end wall.
Preferably, described anode also comprises the projection that extends into conical region from end wall, described projection be conduction and electrically contact with described end wall.
Preferably, described conical region is about the axis substantial symmetry of described anode, and described projection is arranged on the described axis.
Preferably, described projection provides and has inclination or the curved surface that is arranged on the summit on the described axis.
Preferably, described anode also comprises the chamber that is suitable for holding cooling fluid.Preferably, the thickness of the described end wall between described conical region and the described chamber is less than 5mm.
Description of drawings
For a person skilled in the art, other characteristics of the present invention and advantage will become apparent by the explanation of preferred embodiment being done in conjunction with following accompanying drawing, wherein:
Fig. 1 is according to ionogenic partial sectional view of the present invention;
Fig. 2 is the plane graph in Fig. 1 intermediate ion source;
Fig. 3 illustrates the schematic diagram of the anode with fin;
Fig. 4 illustrates the schematic diagram that is used for ionogenic another place of gas supply system;
Fig. 5 illustrates ionogenic alternative structure.
Embodiment
At first, show ion source 100 according to the preferred embodiment of the invention with reference to figure 1 and Fig. 2.Described ion source 100 comprises the substrate 101 that cooperates with screw or alternate manner with cylindrical shroud 102.Described guard shield has interior inclined surface 103, the openend 116 in the ion zone 113 that will be described to below this surface defines.Described substrate 101 has flange 105, and upwardly extending from it is the threaded portion 106 that cooperates with guard shield 102.Described substrate 101 has last ring surface 107.Inner periphery flange 108 extends so that toroidal magnet 114 is located on it from described ring surface 107.
Being arranged on the magnet 114 is such as partition made of aluminum 117, and it provides radiation shield to prevent magnet 114 because of overheated from the radiation of anode 112, particularly under the situation that anode is not cooled.
Anode 112 is arranged in guard shield by last dead ring 118 and following dead ring 119.Gas compartment 140 is by anode 112, dead ring 118 and 119 and the inner surface of guard shield 102 limit.Described upper insulator 118 is to be used for holding anode 112 correctly and with the rigid insulation body of its correct location.Described insulator 118 also needs to have high heat-resisting quantity and low thermal expansivity, thereby described insulator provides sealing for gas compartment under operating condition.The preferred material that is used for upper insulator comprises glass, pottery or such as the polymer of PEEK (polyethylethylketone).Lower insulator is high temperature elastomeric rings preferably, and it provides elastic packing for gas compartment 140 when substrate 101 is screwed into guard shield.
Inlet 141 (Fig. 2) by guard shield can be connected to the gas line (not shown) to gas compartment 140 supply gas.The control of gas stream is by mass flow controller or is arranged on other similar control mechanism monitoring of ion source upstream end that this is known in the art.
What extend through anode side walls 121 is a plurality of passages 125, and each ends in the ionized space 113 that is in set 126 places, hole of next-door neighbour's end wall 120.Described passage 125 provides from gas compartment 140 to ionized space 113 pipeline.Passage 125 extends downwardly into ionized space from the external anode wall, makes the directed projection 123 of described passage.This guarantees that the gas molecule of introducing evenly is directed at projection 123 places.Because gas molecule is near the zone that is directed and is introduced in high electron density and electron energy on the direction in the zone of high electron density and electron energy, therefore gas ionization efficient increase.
As shown in Figure 1, projection 123 and end wall 120 whole formation.Be illustrated in addition in the anode 112 is the chamber 127 that holds the cooling fluid that comes from inlet duct 150.Described chamber 127 extends to the lower surface 128 and the projection 123 of end wall.The thickness of end wall is preferably less than 10mm, thereby described cooling liquid can cool off projection fully.The minimum thickness of end wall and projection is only determined by the restriction of the manufacturing process that is used to make anode.In fact, the thickness of end wall approximately is 2mm.
The optional system that is used for cooling anodes is illustrated in Fig. 3.In this embodiment, there is not the heavy anode 160 of internal chamber to be provided with the hole 162 of the downside surface that extends to anode end wall 120.Described anode is installed on the axle 161, and this axle is contained in the described hole, and is the material with high thermal conductivity, such as copper, thereby provides fin for anode.Also can use axial anode that electrical connection is provided.Described copper axle 161 can extend through the reach through hole of vacuum chamber, thereby makes fin directly be communicated with the atmosphere of described outdoor, thereby the cooling of enhancing is provided.
For bigger protection is provided to ion source, thermal switch 163 can be set on the downside surface of anode, or is arranged on the described copper axle.Ion source is powered up, and for example control signal or the anode signal that applies to mass flow control can be via lead by described thermal switch.If the preset temperature of switch surpasses such as 100 degrees centigrade, ionogenic powering up is cut off, thereby prevents further heating.This has protected the ion source component such as magnet and described projection, and it can be destroyed by overheated.
In the operation to ionizable gas, for example oxygen, nitrogen or argon via mass flow controller or similarly adjuster 141 be supplied to gas compartment 140 by entering the mouth, this is known in the art.Described gas is sent to ionized space 113 from described chamber 140 by anode passages 125.Described anode is recharged in the scope of 0-300V, and with respect to negative electrode 150V preferably, described negative electrode is in earth potential or electromotive force closely.Described guard shield is maintained at earth potential.Approximately thereby the DC of 12A or AC hot-fluid pass the emission of negative electrode excited electrons.
The electronics that produces at negative electrode is influenced by anode potential and is accelerated towards it.Magnetic field causes electronics generally following hard on magnetic field line when anode moves with aliging of electric field.This has the effect of assembling electron stream towards the axis in magnetic field.Thereby described magnetic field applies screw to electronics further to have strengthened their potential energy ionized gas molecule and has gathered electronics towards longitudinal axis.
Collision between high energy electron and the gas molecule produces cation, the influence that its experience is opposite with electronics.Described ion has random velocity at first, but is influenced by potential gradient, and this potential gradient quickens them and crosses negative electrode 111 towards negative electrode 111.
Under some operating condition, the voltage between anode 112 and the guard shield 102 can cause undesirable gas attenuation in the chamber 140.Therefore, the size of the ingate of chamber 140 is made into the combination size less than each access opening 126, thereby prevents the excess pressure in the chamber 140.
With reference now to Fig. 4,, it shows ionogenic a kind of improvement shown in Figure 1.In Fig. 4, for the sake of clarity, the filament installed part is removed.In the present embodiment, described gas supply comprises one or more pipes 170 that extend into ionized space by openend 116.Alternatively, described pipe can extend through the passage in the anode side walls.In order to make pipe not interfere the foundation of ionic current, pipe is nonconducting.Described pipe also needs high heat resistance.Therefore, the preferred material that is used for pipe is aluminum oxide or similar pottery.Pipe 170 extends from the gas manifold 171 that is positioned at the ionized space outside.The outlet of described pipe 172 next-door neighbour projection 123 is provided with, thereby gas is provided in the ionized space in high electron density and electron energy place, has therefore increased ionisation of gas efficient.
In Fig. 5, ionogenic optional structure is shown.Replace being arranged on the magnet between substrate 101 and the lower sealing ring, in this alternate embodiment, anode 112 has the flange 190 that limits groove 191, and this groove is used for holding therein magnet 114.In this embodiment, lower sealing ring is replaced by more base insulator 192, and this insulator 192 is provided for the lower seal of chamber 140, also magnet 114 is remained in the described groove 191.Described base insulator 192 is provided with the groove that holds O type ring 193, and described O type ring allows the thermal expansion to a certain degree of base insulator.The therefore more close described ionized space setting of described magnet, and therefore be applied to the magnetic field of ionized space by described magnet can be stronger, perhaps can use more cheap magnet.Importantly, described magnet is configured to the rear surface thermo-contact with anode 112, and this anode is cooled off by the fluid in the chamber 127 that enters described anode.Therefore, reduce or destroy overheated can being prevented from of magnet of its magnetic characteristic.
Whole specification, " comprising " speech etc. is to use in the mode that comprises, that is, the feature that is proposed can make up with the further feature among each embodiment of the present invention.
Though specific embodiment of the present invention is illustrated, it will be evident to those skilled in the art that available embodied in other the present invention under the prerequisite that does not deviate from principal character of the present invention.Therefore current embodiment and example are considered to exemplary rather than restrictive, scope of the present invention is limited by claim, rather than limited by previous explanation, and come from claim be equal in the meaning and the scope change so be comprised in wherein.
Claims (38)
1, a kind of ion source, this ion source comprises the negative electrode that produces electronics, anode, ionized space between described negative electrode and the anode, be used for ionogenic gas guiding is entered the gas service duct of described ionized space, be used between described negative electrode and described anode, producing electrical potential difference to form the device of the electron stream that produces by described negative electrode towards described anode, described electron stream passes described ionized space basically and causes described ionisation of gas, described electrical potential difference is also as discharging the ion that is created in the described ionized space from described ion source, wherein said anode comprises end wall, extend and outward-dipping sidewall on cathodic direction at cathode direction from end wall from end wall, thereby make the tapered basically ionized space of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at cathodic openend, wherein said gas service duct comprises one or more passages that extend through described anode side walls, and each described passage terminates in and is close to the place, hole that described end wall is provided with basically.
2, ion source according to claim 1, wherein said electrical potential difference produces the electric field that extends away from anode, and described ion source also comprises the magnet that produces magnetic field, and its axis is parallel with described electric field basically.
3, ion source according to claim 2, wherein said magnet are arranged so that so the maximum of magnetic field intensity is on the axis of electric field and on anode one side of ionized space.
4, ion source according to claim 2, wherein said magnet are to be arranged to the permanent magnet that contacts with anode.
5, ion source according to claim 1, the wherein said described device that is used for concentrated described electron stream comprises the projection of the described anode that extends into described ionized space.
6, ion source according to claim 5, wherein said projection is extended from described sidewall.
7, ion source according to claim 5, wherein each passage is roughly extending through described sidewall on the direction of described projection.
8, ion source according to claim 5, wherein said projection have or curved surface, and this surface has the summit that is arranged on the anode axis.
9, ion source according to claim 1, wherein said anode comprise the internal fluid channels that is suitable for admitting the fluid that cools off described anode.
10, ion source according to claim 5, described anode comprise the chamber that is suitable for admitting the fluid that cools off described anode, and described fluid passage extends to the lower surface of projection, and wherein the material thickness of the projection between ionized space and the chamber is less than 10mm.
11, ion source according to claim 10, the thickness of wherein said material is less than 5mm.
12, ion source according to claim 10, the thickness of wherein said material is less than 3mm.
13, ion source according to claim 10 also comprises the fluid line of the lower surface termination that extends into described chamber and be close to described projection basically, thereby makes that the fluid that provides by described fluid line is guided at the lower surface of described projection.
14, ion source according to claim 1, wherein said anode comprise that at least one is exposed to the surface of described ionized space, and described at least one surperficial at least a portion is the non-oxide material of conductivity.
15, ion source according to claim 14, the non-oxide material of wherein said conductivity is a titanium nitride.
16, ion source according to claim 5, the surface of wherein said projection are the non-oxide materials of conductivity.
17, ion source according to claim 1, also comprise guard shield, first seal and second seal, wherein first and second seals one of them is positioned at anode in the guard shield at least, thereby make described anode and described guard shield electric insulation, wherein said guard shield, the anode and first and second seal limit a Room, described guard shield comprises that also at least one leads to the gas access of described chamber, extends to one or more passages of ionized space from described chamber.
18, a kind of ion source, this ion source comprises the negative electrode that produces electronics, anode, ionized space between described negative electrode and the anode, be used for ionogenic gas guiding is entered the gas service duct of described ionized space, be used between described negative electrode and described anode, producing electrical potential difference to form the device of the electron stream that produces by described negative electrode towards described anode, described electron stream passes described ionized space basically and causes described ionisation of gas, described electrical potential difference is also as discharging the ion that produces from described ion source described ionized space, wherein said anode comprises end wall, extend and outward-dipping sidewall on cathodic direction at cathode direction from described end wall from end wall, thereby make the tapered basically ionized space of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at cathodic openend, wherein said gas service duct comprises one or more pipes that extend into described ionized space, and each pipe terminates in the place, hole that the described end wall of next-door neighbour is provided with.
19, ion source according to claim 18, wherein each pipe extends into ionized space from the openend of ionized space.
20, ion source according to claim 18, wherein each pipe comprises non-conducting material.
21, ion source according to claim 18, wherein said electrical potential difference produces the electric field away from anode, and described ion source also comprises the magnet that produces magnetic field, and its axis is parallel with described electric field basically.
22, ion source according to claim 21, wherein said magnet are to be arranged to the permanent magnet that contacts with anode.
23, ion source according to claim 18 also comprises the conductive prominence that extends and electrically contact with described end wall from described end wall.
24, a kind ofly be used for ionogenic anode, described anode comprises end wall, extend and outward-dipping sidewall on direction from described end wall away from described end wall, thereby make the tapered basically zone of the common qualification of end wall and sidewall, this zone has the blind end at the end wall place, and at the openend with respect to the anode one end place of end wall.
25, anode according to claim 24 comprises also from described end wall extending into projection the described conical region that described projection is conducted electricity, and electrically contacts with described end wall.
26, anode according to claim 25, wherein said projection and described end wall are whole to be formed.
27, about anode axis symmetry, described projection is arranged on the described axis basically for anode according to claim 25, wherein said conical region.
28, anode according to claim 25, wherein said projection provide or curved surface, and this surface has the summit that is arranged on the described axis.
29, anode according to claim 24 also comprises one or more passages, is used for gas is communicated to conical region by anode.
30, anode according to claim 29, wherein each described passage ends at from described end wall and extends into hole in the projection the described conical region, and described projection is conducted electricity, and electrically contacts with described end wall.
31, anode according to claim 29, wherein each described passage extends through described sidewall, and ends in the hole that is close to described end wall basically.
32, anode according to claim 31, wherein each passage is roughly extending through described sidewall on the direction of end wall.
33, anode according to claim 24 also comprises the chamber that is suitable for admitting cooling fluid.
34, anode according to claim 33, the thickness of the described end wall between wherein said conical region and the described chamber is less than 5mm.
35, anode according to claim 33, the thickness of the described end wall between wherein said conical region and the described chamber is less than 3mm.
36, anode according to claim 33, also comprise from described end wall and extend into projection the described conical region, described projection is conducted electricity, and electrically contacts with described end wall, and the thickness of the described projection between described conical region and the described chamber is less than 5mm.
37, anode according to claim 36, wherein said chamber is suitable for holding therein fluid line, the lower surface that described fluid line is close to described projection basically stops, thereby makes that the fluid that provides by fluid line is guided at the lower surface of described projection.
38, anode according to claim 24 also comprises the groove that is used for holding therein permanent magnet.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2003905668A AU2003905668A0 (en) | 2003-10-15 | Ion source with modified gas delivery | |
| AU2003905668 | 2003-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1906725A true CN1906725A (en) | 2007-01-31 |
| CN100533642C CN100533642C (en) | 2009-08-26 |
Family
ID=34437876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800374220A Expired - Fee Related CN100533642C (en) | 2003-10-15 | 2004-10-15 | Ion source with modified gas delivery |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100533642C (en) |
| WO (1) | WO2005038849A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868114A (en) * | 2009-04-16 | 2010-10-20 | 西门子公司 | Ion source and electrode thereof and will treat that ionized gas imports ionogenic method |
| CN102479653A (en) * | 2010-11-30 | 2012-05-30 | 潘庆智 | Method and device for stripping extranuclear electrons |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4862032A (en) * | 1986-10-20 | 1989-08-29 | Kaufman Harold R | End-Hall ion source |
| US5616179A (en) * | 1993-12-21 | 1997-04-01 | Commonwealth Scientific Corporation | Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films |
| AUPP479298A0 (en) * | 1998-07-21 | 1998-08-13 | Sainty, Wayne | Ion source |
| JP4038328B2 (en) * | 1999-10-29 | 2008-01-23 | 株式会社リコー | Image forming apparatus, transfer material conveying method, and transfer apparatus |
| WO2002037521A2 (en) * | 2000-11-03 | 2002-05-10 | Tokyo Electron Limited | Hall effect ion source at high current density |
| US6608431B1 (en) * | 2002-05-24 | 2003-08-19 | Kaufman & Robinson, Inc. | Modular gridless ion source |
-
2004
- 2004-10-15 WO PCT/AU2004/001413 patent/WO2005038849A1/en active Application Filing
- 2004-10-15 CN CNB2004800374220A patent/CN100533642C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868114A (en) * | 2009-04-16 | 2010-10-20 | 西门子公司 | Ion source and electrode thereof and will treat that ionized gas imports ionogenic method |
| CN102479653A (en) * | 2010-11-30 | 2012-05-30 | 潘庆智 | Method and device for stripping extranuclear electrons |
| CN102479653B (en) * | 2010-11-30 | 2017-03-08 | 潘庆智 | A kind of method of stripped atom electron outside nucleus and its device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005038849A1 (en) | 2005-04-28 |
| CN100533642C (en) | 2009-08-26 |
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Granted publication date: 20090826 Termination date: 20121015 |