CN1897216A - Planar display device with float-grid structure and its production - Google Patents
Planar display device with float-grid structure and its production Download PDFInfo
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Abstract
A flat display and the manufacture craft with the floating grid structure, including: the sealed vacuum cavity that forms by the cathode board, the anode board and the glasses encircling frame; the anode board with the photoetching conducting layer and the fluorescent layer preparing on it; the cathode board with the cathode conducting layer, the vegetal carbon nanometer tube cathode and the grid conducting layer that controls the electron transmission; the support wall structure and the getter accessorial component; fixes floating grid structure for controlling the carbon nanometer tube cathode with the strong grid structure on the cathode board, can improve the manufacture successful rate of the whole parts, reduce the manufacture cost and simplify the manufacture craft, enhance the controlling effect of the grid structure to the carbon nanometer tube cathode.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, microelectronics science and technology field, vacuum science and technical field and nanoscale science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to the manufacture craft that has field emission flat panel display device floating gate structure, carbon nanotube cathod.
Background technology
Carbon nano-tube is a kind of coaxial tubulose material, has unique geometric shape, little tip curvature radius, and high aspect rate and stable physicochemical properties are a kind of more satisfactory emitting cathode manufacturing materials.At present, the preparation method who is used for carbon nanotube cathod is broadly divided into two classes, that is: direct growth method and grafting.The field emission characteristics of the carbon nanotube cathod of employing direct growth method preparation is better than the field emission characteristics of the carbon nanotube cathod of other implantation method preparation, the density of institute's carbon nanotubes grown is than higher, rete is also thicker, and the influence of essentially no other impurity has plurality of advantages such as emission current is relatively more even, emission is big, emission current is more stable.
Utilizing carbon nano-tube is a kind of emerging field emission display device as the flat-panel monitor of cathode material, has plurality of advantages such as high brightness, high definition, wide, the complete complanation of suitable warm area, has caused researcher's great attention.In the middle of the carbon nanotube cathod field emission flat-panel display of three-stage structure, the control gate electrode structure is one of element of comparison key, and it plays very necessary control effect to the electronics emission of carbon nanotube cathod.No matter be the material of making the control grid, manufacture craft is still controlled the version of grid etc., all is the aspect of researchers' significant.So, how making full use of on the basis that the direct growth legal system is equipped with the good field emission characteristics that carbon nanotube cathod has, control gate electrode structure and carbon nanotube cathod structure are organically combined, thereby promote the Highgrade integration development of integral device, and how to select the grid structure form that is fit to, how to select the gate fabrication process that is fit to, or the like, these all are the realistic problems that needs emphasis to consider.Under the high-tension effect of anode, move with higher speed anode from the carbon nanotube cathod electrons emitted.But not all be that all electronics vertically fly to the anode glass panel also, the rambling supporting wall structure that flies to of portions of electronics meeting; After the duplet supporting wall structure bombards, can from supporting wall structure, inspire secondary electron, the emission meeting of its secondary electron affects to display device, then can have influence on the image quality of device, under serious situation, can cause burning and scrapping of integral display spare.Therefore, except keeping being strict with, also need on device architecture, seek breakthrough in continuation on the device making technics.
In addition,, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action.
Summary of the invention
The objective of the invention is to overcome the shortcoming that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel display device that has floating gate structure and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: comprise by negative electrode panel, anode plate and all around glass enclose sealed vacuum chamber that frame constitutes, in the anode conductive layer that photoetching is arranged on the anode plate and preparation at the phosphor powder layer on the anode conductive layer, supporting wall structure and getter subsidiary component between negative electrode panel and anode plate, fixed installation is useful on and prevents reinforcing grid structure that secondary and grid out-of-control phenomenon the take place floating gate structure to carbon nanotube cathod control on the negative electrode panel, and floating gate structure is positioned at the top of carbon nanotube cathod.
Described floating gate structure comprises the grid conducting layer that is present on the negative electrode panel, be present in the dielectric isolation layer on negative electrode panel and the grid conducting layer, evaporation has metal level on dielectric isolation layer, to forming cathode conductive layer after the metal level etching, evaporation has metal level on cathode conductive layer, metal level is carried out forming catalyst metal layer after the etching, the shape of catalyst metal layer is identical with the shape of cathode conductive layer, preparation has cathode coating on dielectric isolation layer, there is the electron channel hole above the cathode coating after the etching, in the electron channel hole, expose the catalyst metal layer and the cathode conductive layer of bottom, cathode coating covers the remainder of cathode conductive layer and catalyst metal layer, evaporation has the floating boom metal level on cathode coating, floating boom metal level after the etching presents a kind of network-like structure, its lateral part and grid conducting layer parallel, its longitudinal component and cathode conductive layer parallel, and this lateral part and longitudinal component link together, and in the catalyst metal layer surface preparation carbon nanotube cathod are arranged.
The width of floating boom metal level is no more than the width of cathode conductive layer, and the floating boom metal level is positioned at the centre position of adjacent cathode conductive layer in vertical direction, and the trend of cathode conductive layer is vertical mutually with the trend of grid conducting layer.Described grid conducting layer is a tin indium oxide rete, also can be gold, silver, molybdenum, copper, aluminium, chromium, one of tin, dielectric isolation layer can be polyimide layer, silicon dioxide layer, one of insulation paste layer, the complete cover grid conductive layer of dielectric isolation layer, cathode conductive layer is a metallic gold, silver, aluminium, tin, chromium, molybdenum, tungsten, catalyst metal layer is a metallic iron, cobalt, nickel, cathode coating is a silicon dioxide layer, polyimide layer, the insulation paste layer, the floating boom metal level is a gold, silver, tin, indium, aluminium, chromium, molybdenum, backing material is a glass, as soda-lime glass, Pyrex.
A kind of manufacture craft that has the flat-panel monitor of floating gate structure, comprise the making of negative electrode panel and anode plate, on the anode glass panel, form anode electrode layer and make, in above-mentioned steps, also carry out on the negative electrode panel, making floating gate structure in the non-display area printing insulation paste layer of anode electrode layer, viewing area printing phosphor powder layer on anode electrode layer and device assembling and finished product.
Floating gate structure comprises negative electrode panel, grid conducting layer, dielectric isolation layer, cathode conductive layer, catalyst metal layer, cathode coating, floating boom metal level, carbon nanotube cathod part, and adopts following technology to make:
1), the making of negative electrode panel: whole plate glass is carried out scribing, produce the negative electrode panel;
2), the making of grid conducting layer: metal level on evaporation on the negative electrode panel, in conjunction with conventional photoetching process, the metal molybdenum layer is carried out etching then, form grid conducting layer;
3), the making of dielectric isolation layer: on the negative electrode panel, prepare the layer of silicon dioxide layer, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form dielectric isolation layer; Dielectric isolation layer is wanted complete cover grid conductive layer;
4), the making of cathode conductive layer: metal level of evaporation on dielectric isolation layer, in conjunction with conventional photoetching process, metal level is carried out etching then, form cathode conductive layer; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal;
5), the making of catalyst metal layer: metal level of evaporation on cathode conductive layer, in conjunction with conventional photoetching process, metal level is carried out etching then, form catalyst metal layer; The shape of catalyst metal layer and the shape of cathode conductive layer are identical;
6), the making of cathode coating: on dielectric isolation layer, prepare a silicon dioxide layer once more, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form cathode coating; There is the electron channel hole above the cathode coating after the etching, in the electron channel hole, needs to expose the catalyst metal layer and the cathode conductive layer of bottom; Cathode coating will cover the remainder of cathode conductive layer and catalyst metal layer, but will expose the electron channel hole;
7), the making of floating boom metal level: metal level of evaporation on cathode coating, in conjunction with conventional photoetching process, metal level is carried out etching then, form the floating boom metal level; The top of floating boom metal level must not cover any spacer; Floating boom metal level after the etching presents a kind of network-like structure, its lateral part and grid conducting layer parallel, its longitudinal component and cathode conductive layer parallel, and this lateral part and longitudinal component link together, do not connect any voltage on the floating boom metal level, the width of floating boom metal level must not surpass the width of cathodic metal layer, and the floating boom metal level should be positioned at the centre position of adjacent cathodic metal layer in vertical direction;
8), the growth of carbon nanotube cathod: the catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth method, goes out carbon nanotube cathod in the superficial growth of cathode conductive layer.
The concrete making step of anode electrode layer is as follows: evaporation one deck tin indium oxide rete on the anode glass panel, in conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, and form anode electrode layer.
The concrete making step of insulation paste layer is as follows: in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
The concrete making step of phosphor powder layer is as follows: in conjunction with silk-screen printing technique, and the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
In the device assembling, cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame to be assembled together, and getter put in the middle of the cavity, fix with glass powder with low melting point, around face glass, smeared glass powder with low melting point, fix with clip, in finished product is made, the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Main characteristics among the present invention are to have made floating gate structure, and have made and have field emission flat light-emitting display device floating gate structure, carbon nanotube cathod.Be used for preventing the secondary of display device on the one hand, also be to be used to prevent that the generation of grid out-of-control phenomenon from appearring in display device on the other hand, can improve the power that is made into of integral device effectively, reduce the cost of manufacture of device, simplify the manufacture craft of device, further the reinforcing grid structure is to effective control action of carbon nanotube cathod.
1, floating gate structure can prevent the secondary in the display device effectively.When after applying appropriate voltage on the control grid, will form powerful electric field strength on the carbon nano-tube top, force carbon nano-tube to launch a large amount of electronics; Be subjected to the high-tension function influence of anode, electrons emitted anode high-speed motion.Because the floating boom metal level is positioned at the top of negative electrode panel, and the floating boom metal level above do not have spacer, therefore just can absorb secondary electron effectively, the secondary phenomenon in the elimination display device;
2, floating gate structure can suppress the grid out-of-control phenomenon in the display device effectively.Because the high-tension effect of anode, from the motion of carbon nanotube cathod electrons emitted high speed anode, impact fluorescence bisque and send visible light.But occur such a case extremely easily, act directly on cathode surface, directly make the carbon nanotube cathod emitting electrons by the anode high voltage, it is the phenomenon that control appears in grid, like this, so-called three-stage structure has also just lost practical significance, and the effect of control grid also just disappears thereupon.After having made floating gate structure, because the electromotive force of floating boom is raised effect, make anode and negative electrode be not easy to occur direct acting situation, that is to say the generation that can effectively avoid the grid out-of-control phenomenon;
3, in the floating gate structure in the present invention, because the top catalyst metal layer of having made of cathode conductive layer, this has just done preparation for low temperature direct growth carbon nanotube cathod.Utilize this catalyst metal layer as catalyst, and the cathode conductive layer that utilizes catalyst metal layer below is as cathode electrode, just can the direct growth carbon nanotube cathod, and be connected to the device outside.Like this, that is to say that grid structure and carbon nanotube cathod structure is organically together integrated, and this helps further improving the integrated level of integral device, reduces the cost of manufacture of device.
In addition, in the floating gate structure in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of floating gate structure;
Fig. 2 has provided the transversary schematic diagram of floating gate structure;
Fig. 3 has provided and has had structural representation floating gate structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
As Fig. 1,2, shown in 3, the present invention includes by negative electrode panel 1, anode plate 11 and all around glass enclose the sealed vacuum chamber that frame 9 constitutes, the phosphor powder layer 14 on anode conductive layer 12 at anode conductive layer 12 that photoetching is arranged on the anode plate 11 and preparation, supporting wall structure 10 between negative electrode panel 1 and anode plate 11 and getter subsidiary component 15, fixed installation is useful on and prevents reinforcing grid structure that secondary and grid out-of-control phenomenon the take place floating gate structure to carbon nanotube cathod control on the negative electrode panel, and floating gate structure is positioned at the top of carbon nanotube cathod.
Described floating gate structure comprises the grid conducting layer 2 that is present on the negative electrode panel 1, be present in the dielectric isolation layer 3 on negative electrode panel 1 and the grid conducting layer 2, evaporation has metal level on dielectric isolation layer 3, to forming cathode conductive layer 4 after the metal level etching, evaporation has metal level on cathode conductive layer 4, metal level is carried out forming catalyst metal layer 5 after the etching, the shape of catalyst metal layer is identical with the shape of cathode conductive layer, preparation has cathode coating 6 on dielectric isolation layer 3, there is the electron channel hole above the cathode coating after the etching, in the electron channel hole, expose the catalyst metal layer 5 and the cathode conductive layer 4 of bottom, cathode coating 6 covers the remainder of cathode conductive layer 4 and catalyst metal layer 5, evaporation has floating boom metal level 7 on cathode coating 6, floating boom metal level 7 after the etching presents a kind of network-like structure, its lateral part and grid conducting layer 2 parallel, its longitudinal component and cathode conductive layer 4 parallel, and this lateral part and longitudinal component link together, and in catalyst metal layer 5 surface preparation carbon nanotube cathod 8 are arranged.
The width of floating boom metal level 7 is no more than the width of cathode conductive layer 4, and floating boom metal level 7 is positioned at the centre position of adjacent cathode conductive layer 4 in vertical direction, and the trend of the trend of cathode conductive layer 4 and grid conducting layer 2 is vertical mutually.
Described grid conducting layer 2 is a tin indium oxide rete, also can be gold, silver, molybdenum, copper, aluminium, chromium, one of tin, dielectric isolation layer 3 can be polyimide layer, silicon dioxide layer, one of insulation paste layer, the complete cover grid conductive layer of dielectric isolation layer, cathode conductive layer 4 is a metallic gold, silver, aluminium, tin, chromium, molybdenum, tungsten, catalyst metal layer 5 is a metallic iron, cobalt, nickel, cathode coating 6 is a silicon dioxide layer, polyimide layer, the insulation paste layer, floating boom metal level 7 is a gold, silver, tin, indium, aluminium, chromium, molybdenum, backing material is a glass, as soda-lime glass, Pyrex.
Floating gate structure among the present invention comprises negative electrode panel 1, grid conducting layer 2, dielectric isolation layer 3, cathode conductive layer 4, catalyst metal layer 5, cathode coating 6, floating boom metal level 7, carbon nano-tube 8 cathode portion, and adopts following technology to make:
1, the making of negative electrode panel
The dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the negative electrode panel;
2, the making of grid conducting layer
Metal molybdenum layer on evaporation on the negative electrode panel in conjunction with conventional photoetching process, carries out etching to the metal molybdenum layer then, forms grid conducting layer;
3, the making of dielectric isolation layer
On the negative electrode panel, prepare the layer of silicon dioxide layer, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form dielectric isolation layer; Dielectric isolation layer is wanted complete cover grid conductive layer;
4, the making of cathode conductive layer
Metallic chromium layer of evaporation on dielectric isolation layer in conjunction with conventional photoetching process, carries out etching to metallic chromium layer then, forms cathode conductive layer; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal;
5, the making of catalyst metal layer
Layer of metal cobalt of evaporation on cathode conductive layer in conjunction with conventional photoetching process, carries out etching to layer of metal cobalt then, forms catalyst metal layer; The shape of catalyst metal layer and the shape of cathode conductive layer are identical;
6, the making of cathode coating
On dielectric isolation layer, prepare a silicon dioxide layer once more, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form cathode coating; There is the electron channel hole above the cathode coating after the etching, in the electron channel hole, needs to expose the catalyst metal layer and the cathode conductive layer of bottom; Cathode coating will cover the remainder of cathode conductive layer and catalyst metal layer, but will expose the electron channel hole;
7, the making of floating boom metal level
Metal molybdenum layer of evaporation on cathode coating in conjunction with conventional photoetching process, carries out etching to the metal molybdenum layer then, forms the floating boom metal level; The top of floating boom metal level must not cover any spacer; Floating boom metal level after the etching presents a kind of network-like structure, and its lateral part and grid conducting layer parallel, and its longitudinal component and cathode conductive layer parallel, and this lateral part and longitudinal component link together; Do not connect any voltage on the floating boom metal level; The width of floating boom metal level must not surpass the width of cathodic metal layer; The floating boom metal level should be positioned at the centre position of adjacent cathodic metal layer in vertical direction;
8, the cleaning surfaces of floating gate structure is handled
Clean is carried out on the surface of target panel and floating gate structure thereof, removes dust and impurity;
9, the growth of carbon nanotube cathod
The catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth method, goes out carbon nanotube cathod in the superficial growth of cathode conductive layer;
The manufacture craft of carbon nanotube field emission flat-panel monitor that has floating gate structure among the present invention is as follows:
1, the making of negative electrode panel
The dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the negative electrode panel;
2, the making of grid conducting layer
Metal molybdenum layer on evaporation on the negative electrode panel in conjunction with conventional photoetching process, carries out etching to the metal molybdenum layer then, forms grid conducting layer;
3, the making of dielectric isolation layer
On the negative electrode panel, prepare the layer of silicon dioxide layer, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form dielectric isolation layer; Dielectric isolation layer is wanted complete cover grid conductive layer;
4, the making of cathode conductive layer
Metallic chromium layer of evaporation on dielectric isolation layer in conjunction with conventional photoetching process, carries out etching to metallic chromium layer then, forms cathode conductive layer; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal;
5, the making of catalyst metal layer
Layer of metal cobalt of evaporation on cathode conductive layer in conjunction with conventional photoetching process, carries out etching to layer of metal cobalt then, forms catalyst metal layer; The shape of catalyst metal layer and the shape of cathode conductive layer are identical;
6, the making of cathode coating
On dielectric isolation layer, prepare a silicon dioxide layer once more, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form cathode coating; There is the electron channel hole above the cathode coating after the etching, in the electron channel hole, needs to expose the catalyst metal layer and the cathode conductive layer of bottom; Cathode coating will cover the remainder of cathode conductive layer and catalyst metal layer, but will expose the electron channel hole;
7, the making of floating boom metal level
Metal molybdenum layer of evaporation on cathode coating in conjunction with conventional photoetching process, carries out etching to the metal molybdenum layer then, forms the floating boom metal level; The top of floating boom metal level must not cover any spacer; Floating boom metal level after the etching presents a kind of network-like structure, and its lateral part and grid conducting layer parallel, and its longitudinal component and cathode conductive layer parallel, and this lateral part and longitudinal component link together; Do not connect any voltage on the floating boom metal level; The width of floating boom metal level must not surpass the width of cathodic metal layer; The floating boom metal level should be positioned at the centre position of adjacent cathodic metal layer in vertical direction;
8, the cleaning surfaces of floating gate structure is handled
Clean is carried out on the surface of target panel and floating gate structure thereof, removes dust and impurity;
9, the growth of carbon nanotube cathod
The catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth method, goes out carbon nanotube cathod in the superficial growth of cathode conductive layer;
10, the reprocessing of carbon nanotube cathod
Carbon nanotube cathod is carried out reprocessing, further improve the field emission characteristics of carbon nanotube cathod.
11, the making of anode glass panel
Whole sodium calcium plate glass is carried out cutting, produce the anode glass panel;
12, the making of anode electrode layer
Evaporation one deck tin indium oxide rete on the anode glass panel; In conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer;
13, the making of insulation paste layer
In conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
14, the making of phosphor powder layer
In conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
15, device assembling
Cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
16, finished product is made
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention made the secondary that is used for preventing display device, be used to prevent display device occur the grid out-of-control phenomenon generation, can improve integral device effectively be made into power, further the reinforcing grid structure is to the floating gate structure of effective control action of carbon nanotube cathod.
Claims (10)
1, a kind of flat-panel monitor of floating gate structure, comprise by negative electrode panel [1], anode plate [11] and all around glass enclose the sealed vacuum chamber that frame [9] constitutes, the phosphor powder layer [14] on anode conductive layer [12] at anode conductive layer [12] that photoetching is arranged on the anode plate [11] and preparation, be positioned at supporting wall structure [10] and getter subsidiary component [15] between negative electrode panel [1] and the anode plate [11], it is characterized in that: fixed installation is useful on and prevents reinforcing grid structure that secondary and grid out-of-control phenomenon the take place floating gate structure to carbon nanotube cathod control on the negative electrode panel, and floating gate structure is positioned at the top of carbon nanotube cathod.
2, a kind of flat-panel monitor that has floating gate structure according to claim 1, it is characterized in that: described floating gate structure comprises the grid conducting layer [2] that is present on the negative electrode panel [1], be present in the dielectric isolation layer [3] on negative electrode panel [1] and the grid conducting layer [2], evaporation has metal level on dielectric isolation layer [3], to forming cathode conductive layer [4] after the metal level etching, evaporation has metal level on cathode conductive layer [4], metal level is carried out forming catalyst metal layer [5] after the etching, the shape of catalyst metal layer is identical with the shape of cathode conductive layer, preparation has cathode coating [6] on dielectric isolation layer [3], there is the electron channel hole above the cathode coating after the etching, in the electron channel hole, expose the catalyst metal layer [5] and the cathode conductive layer [4] of bottom, cathode coating [6] covers the remainder of cathode conductive layer [4] and catalyst metal layer [5], evaporation has floating boom metal level [7] on cathode coating [6], floating boom metal level [7] after the etching presents a kind of network-like structure, its lateral part and grid conducting layer [2] parallel, its longitudinal component and cathode conductive layer [4] parallel, and this lateral part and longitudinal component link together, and in catalyst metal layer [5] surface preparation carbon nanotube cathod [8] are arranged.
3, a kind of flat-panel monitor that has floating gate structure according to claim 2, it is characterized in that: the width of floating boom metal level [7] is no more than the width of cathode conductive layer [4], floating boom metal level [7] is positioned at the centre position of adjacent cathode conductive layer [4] in vertical direction, and the trend of cathode conductive layer [4] is vertical mutually with the trend of grid conducting layer [2].
4, a kind of flat-panel monitor that has floating gate structure according to claim 2, it is characterized in that: described grid conducting layer [2] is a tin indium oxide rete, also can be gold, silver, molybdenum, copper, aluminium, chromium, one of tin, dielectric isolation layer [3] can be polyimide layer, silicon dioxide layer, one of insulation paste layer, the complete cover grid conductive layer of dielectric isolation layer, cathode conductive layer [4] is a metallic gold, silver, aluminium, tin, chromium, molybdenum, tungsten, catalyst metal layer [5] is a metallic iron, cobalt, nickel, cathode coating [6] is a silicon dioxide layer, polyimide layer, the insulation paste layer, floating boom metal level [7] is a gold, silver, tin, indium, aluminium, chromium, molybdenum, backing material is a glass, as soda-lime glass, Pyrex.
5, a kind of manufacture craft that has the flat-panel monitor of floating gate structure, comprise the making of negative electrode panel and anode plate, on the anode glass panel, form anode electrode layer and make, it is characterized in that: in above-mentioned steps, also carry out on the negative electrode panel, making floating gate structure in the non-display area printing insulation paste layer of anode electrode layer, viewing area printing phosphor powder layer on anode electrode layer and device assembling and finished product.
6, a kind of manufacture craft that has the flat-panel monitor of floating gate structure according to claim 5, it is characterized in that: floating gate structure comprises negative electrode panel [1], grid conducting layer [2], dielectric isolation layer [3], cathode conductive layer [4], catalyst metal layer [5], cathode coating [6], floating boom metal level [7], carbon nanotube cathod part [8], and adopts following technology to make:
1), the making of negative electrode panel: whole plate glass is carried out scribing, produce the negative electrode panel;
2), the making of grid conducting layer: metal level on evaporation on the negative electrode panel, in conjunction with conventional photoetching process, the metal molybdenum layer is carried out etching then, form grid conducting layer;
3), the making of dielectric isolation layer: on the negative electrode panel, prepare the layer of silicon dioxide layer, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form dielectric isolation layer; Dielectric isolation layer is wanted complete cover grid conductive layer;
4), the making of cathode conductive layer: metal level of evaporation on dielectric isolation layer, in conjunction with conventional photoetching process, metal level is carried out etching then, form cathode conductive layer; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal;
5), the making of catalyst metal layer: metal level of evaporation on cathode conductive layer, in conjunction with conventional photoetching process, metal level is carried out etching then, form catalyst metal layer; The shape of catalyst metal layer and the shape of cathode conductive layer are identical;
6), the making of cathode coating: on dielectric isolation layer, prepare a silicon dioxide layer once more, in conjunction with conventional photoetching process, silicon dioxide layer is carried out etching then, form cathode coating; There is the electron channel hole above the cathode coating after the etching, in the electron channel hole, needs to expose the catalyst metal layer and the cathode conductive layer of bottom; Cathode coating will cover the remainder of cathode conductive layer and catalyst metal layer, but will expose the electron channel hole;
7), the making of floating boom metal level: metal level of evaporation on cathode coating, in conjunction with conventional photoetching process, metal level is carried out etching then, form the floating boom metal level; The top of floating boom metal level must not cover any spacer; Floating boom metal level after the etching presents a kind of network-like structure, its lateral part and grid conducting layer parallel, its longitudinal component and cathode conductive layer parallel, and this lateral part and longitudinal component link together, do not connect any voltage on the floating boom metal level, the width of floating boom metal level must not surpass the width of cathodic metal layer, and the floating boom metal level should be positioned at the centre position of adjacent cathodic metal layer in vertical direction;
8), the growth of carbon nanotube cathod: the catalyst that utilizes catalyst metal layer to use as carbon nano-tube in conjunction with low temperature direct growth method, goes out carbon nanotube cathod in the superficial growth of cathode conductive layer.
7, a kind of manufacture craft that has the flat-panel monitor of floating gate structure according to claim 5, it is characterized in that: the concrete making step of anode electrode layer is as follows: evaporation one deck tin indium oxide rete on the anode glass panel, in conjunction with conventional photoetching process, tin indium oxide rete is carried out etching, form anode electrode layer.
8, a kind of manufacture craft that has the flat-panel monitor of floating gate structure according to claim 5, it is characterized in that: the concrete making step of insulation paste layer is as follows: in conjunction with silk-screen printing technique, non-display area printing insulation paste layer at anode electrode layer is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
9, a kind of manufacture craft that has the flat-panel monitor of floating gate structure according to claim 5, it is characterized in that: the concrete making step of phosphor powder layer is as follows: in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on anode electrode layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
10, a kind of manufacture craft that has the flat-panel monitor of floating gate structure according to claim 5, it is characterized in that: in the device assembling, cathode glass faceplate, anode glass panel, supporting wall structure glass are enclosed frame to be assembled together, and getter put in the middle of the cavity, fix with glass powder with low melting point, around face glass, smeared glass powder with low melting point, fix with clip, in finished product is made, the device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610017541 CN1897216A (en) | 2006-03-20 | 2006-03-20 | Planar display device with float-grid structure and its production |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200610017541 CN1897216A (en) | 2006-03-20 | 2006-03-20 | Planar display device with float-grid structure and its production |
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| CN1897216A true CN1897216A (en) | 2007-01-17 |
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| CN 200610017541 Pending CN1897216A (en) | 2006-03-20 | 2006-03-20 | Planar display device with float-grid structure and its production |
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