CN1890707B - 实施装有ic并带有高衰减背载的传感器 - Google Patents
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Abstract
根据本公开中的实施例,一种超声换能器探测头(80)包括衰减背载基底(94)、集成电路(88)和压电元件阵列(84)。集成电路(88)连接于衰减背载基底(94),该集成电路(88)对于声波是半透彻的。压电元件阵列(84)连接于该集成电路(88);压电元件阵列(84)具有设置在其阵列第一表面上的声波匹配层。
Description
本公开总体上涉及用在医学超声方面的换能器阵列,更具体地,涉及一种用来实施装有IC并带有高衰减背载的传感器的方法和设备。
在医学超声方面,现有技术中的换能器通常安装在集成电路(IC)的表面上。换能器的声学元件附接于并单个地电连接于IC的表面。用于完成上述安装的一般技术是倒装法。该IC提供各元件的电控,例如用于波束形成、信号放大等。
图1中描述了一个超声换能器一般设计的例子。该超声换能器10包括声学元件的平面阵列12,其通过倒装导电凸块16连接于集成电路14。倒装充填材料18包括在倒装导电凸块16、集成电路14和声学元件的平面阵列12之间的区域内。换能器10还包括换能器基座20和互连电缆22。互连电缆22用于在集成电路14和外部电缆(未示出)之间互连。集成电路14采用现有技术中已知的方法通过丝焊电线24而电连接于互连电缆22。
倒装法的不利之处是IC在换能器的声波衰减方面的效果。在换能器操作期间,一些由压电元件产生的声波能量在装置的理想操作方向内被引导。剩余能量在相反方向内被引导。在一般超声换能器中采用吸声背载来吸收这些多余能量。然而,对于装有IC的传感器,由于IC的位置在声学元件之后而不可能采用这种手段。
图2显示了一般超声换能器30的一部分的剖视图。超声换能器30包括由压电元件34与连接于相应压电元件的匹配层元件36组成的阵列32。由压电元件产生的声波能量由参考数字38指示而在相反方向内被引导的剩余能量由参考数字40指示。剩余能量40由衰减背载材料42进行衰减。然而,这种装置的不利之处是衰减背载材料42包括与阵列32的各个压电元件34的电接头44。其结果是,材料42会包括例如提供在材料中的大约数千个电接头。
图3是另一传统型超声换能器50的一部分的剖视图。超声换能器50包括由压电元件54与连接于相应压电元件的匹配层元件56组成的阵列52。超声换能器50包括位于压电谐振器后面的声波反射层58以降低对于声波衰减器的需求。超声换能器50还包括集成电路60,该集成电路通过倒装电接头62和填充材料64连接于阵列52。由压电元件产生的声波能量由参考数字60指示而在相反方向内被引导的剩余能量由参考数字62指示,其中该剩余能量62由声波反射层58反射。然而本方法使得换能器装置的制造非常困难。
因此,希望得到一种改良的换能器探测头和用于操作换能器探测头的方法以克服现有技术问题。
根据本公开的实施例,超声换能器探测头包括衰减背载基底、集成电路和压电元件阵列,其中该集成电路连接于该衰减背载基底且其中该集成电路对于声波是半透彻的(translucent)。压电元件和匹配层元件的阵列连接于该集成电路。
图1是传统型超声传感器的平面图;
图2是传统型超声传感器的剖视图;
图3是另一传统型超声传感器的剖视图;
图4是根据本公开中实施例的带有集成电路和声波衰减的超声换能器的一部分的剖视图;以及
图5是带有根据本公开中实施例的超声换能装置的超声诊断成像系统一部分的方框图。
图4是根据本公开中实施例的带有集成电路和声波衰减的超声换能器80的一部分的剖视图;超声换能器80包括由压电元件84和连接于相应压电元件的匹配层元件86组成的阵列82。超声换能器80还包括集成电路88,该集成电路通过倒装电接头90和填充材料92连接于阵列82。
根据一个实施例,该集成电路88对于声波大致是半透彻的,其中IC的厚度制成处于5-50微米之间的范围。特别理想的IC厚度还依赖于特定的超声应用。在一个实施例中,集成电路的厚度可在机械研磨处理减小之后进行化学抛光得到。此外,IC可例如包括硅基IC。
此外,换能器80包括衰减背载材料94。由压电元件产生的声波能量由参考数字96指示而在相反方向内被引导的剩余能量由参考数字98指示。剩余能量98穿过集成电路88并由衰减背载材料94衰减。
图5是带有根据本公开中实施例的超声换能器的超声诊断成像系统的方框图。超声诊断成像系统100包括适合与超声换能器探测头104一起使用的基本单元102。超声换能器探测头104包括这里所述的超声换能器80。基本单元102包括用来实施超声诊断成像的传统型附加电子设备。超声换能器探测头104通过适当的连接方式连接于基本单元102,例如通过电子电缆、无线连接或其它适当的方式。超声诊断成像系统100能用于实现各种类型的医学诊断超声成像。
根据本公开的一个实施例,该超声换能器提供一种用以实施装有IC并带高衰减背载的换能器的解决方案。该IC的厚度制成处于5-50微米(依赖于应用)之间的范围,从而使得IC对于声波成为半透彻的。如所述的,在一个实施例中,集成电路(IC)的厚度可在机械研磨处理减小之后进行化学抛光得到。此外,位于IC材料薄层后面的声波吸收材料提供充分的衰减。
本公开中实施例的一个例子包括二维换能器。本公开中的实施例在装有IC的换能器的其它设计方案中也是有利的。例如,在诸如心内应用的一维(1D)换能器应用中,IC可提供诸如印刷电路板(PCB)、柔性电路等传统互连技术所不能达到的布线密度。
根据本公开中的实施例,超声换能器探测头包括衰减背载基底、集成电路和压电元件阵列。该集成电路连接于衰减背载基底,其中该集成电路对于声波是半透彻的。该压电元件阵列连接于该集成电路,其中该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
该衰减背载基底可包括任何能够提供相当于大约10dB/cm(在5MHz下)至50dB/cm(在5MHz下)的衰减的材料。此外,衰减背载基底可包括由环氧化物和极高与极低声阻抗粒子的混合物组成的厚度大约0.125英寸的环氧复合材料。
在一个实施例中,超声换能器探测头包括集成电路,该集成电路具有足够小的厚度从而使得该集成电路对于声波是半透彻的。此外,集成电路的厚度大约为5-50微米。此外,集成电路包括硅基、镓基、锗基集成电路中的至少一个。此外,在一个实施例中,压电元件阵列包括二维阵列。在另一个实施例中,压电元件阵列包括一维阵列。
然而在另一个实施例中,超声换能器探测头包括衰减背载基底、连接于该背载基底的集成电路和压电元件阵列。该衰减背载基底包括一种能够提供在5MHz下大约10dB/cm至50dB/cm的衰减的材料。正如这里所述,在一个实施例中,集成电路对于声波是半透彻的,其中该集成电路包括大约5-50微米的厚度并且厚度足够小从而使得该集成电路对于声波是半透彻的。更进一步,压电元件阵列连接于集成电路;其中该压电元件阵列包括设置在其阵列第一表面上的声波匹配层。
然而在另一实施例中,制造超声换能器探测头的方法包括提供衰减背载基底。集成电路连接于该衰减背载基底,其中该集成电路对于声波是半透彻的。此外,压电元件阵列连接于该集成电路;该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。例如,该衰减背载基底可包括一种能够提供在5MHz下大约10dB/cm至50dB/cm的衰减的材料。
根据本公开中的一个实施例,制造超声换能器探测头的方法包括提供衰减背载基底,其中该衰减背载基底包括一种能够提供在5MHz下大约10dB/cm至50dB/cm的衰减的材料。集成电路连接于该衰减背载基底,其中该集成电路对于声波是半透彻的,其中该集成电路包括大约5-50微米的厚度且厚度足够小从而使得该集成电路对于声波是半透彻的。最后,压电元件阵列连接于该集成电路,并且其中:该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
虽然以上仅描述了一些示例性的实施例,本领域一般技术人员很容易想见,可以在示例性实施例中做出许多修改而不会从本质上脱离本公开中实施例的独创性教导和有利之处。因此,所有这些修改应包括在如随后的权利要求所定义的本公开中实施例的范围之内。权利要求中,装置加功能的字句用来涵盖用于实现所述功能的此处所描述的结构,不但包括结构相同的而且包括等效结构。
Claims (18)
1.一种超声换能器探测头,包括:
衰减背载基底;
连接于该衰减背载基底的集成电路,其中该集成电路对于声波是半透彻的;以及
连接于该集成电路的压电元件阵列;
该压电元件阵列具有设置在其阵列第一表面上的声波匹配层,其中所述集成电路的厚度为5-50微米。
2.根据权利要求1所述的超声换能器探测头,其中该衰减背载基底包括一种能够提供在5MHz下10dB/cm至50dB/cm的衰减的材料。
3.根据权利要求1所述的超声换能器探测头,其中该衰减背载基底包括含有环氧化物和极高与极低声阻抗粒子的混合物的环氧复合材料。
4.根据权利要求1所述的超声换能器探测头,其中该集成电路的厚度足够小从而使得该集成电路对于声波半透彻。
5.根据权利要求1所述的超声换能器探测头,其中该集成电路包括硅基、镓基以及锗基集成电路中的至少一个。
6.根据权利要求1所述的超声换能器探测头,其中该压电元件阵列包括二维阵列。
7.根据权利要求1所述的超声换能器探测头,其中该压电元件阵列包括一维阵列。
8.一种超声换能器探测头,包括:
衰减背载基底,其中该衰减背载基底包括一种能够提供在5MHz下10dB/cm至50dB/cm的衰减的材料,
连接于该衰减背载基底的集成电路,其中该集成电路对于声波是半透彻的,其中该集成电路包括5微米以上且小于50微米并足以使得该集成电路对于声波半透彻的厚度;以及
连接于该集成电路的压电元件阵列;
该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
9.根据权利要求8所述的超声换能器探测头,其中该衰减背载基底包括含有环氧化物和极高与极低声阻抗粒子的混合物的环氧复合材料,并且其中该集成电路包括硅基集成电路。
10.一种利用超声换能器探测头的超声诊断成像系统,该换能器探测头包括:
衰减背载基底,其中该衰减背载基底包括一种能够提供在5MHz下10dB/cm至50dB/cm的衰减的材料;
连接于该衰减背载基底的集成电路,其中该集成电路对于声波是半透彻的,其中该集成电路包括5微米以上并小于50微米且足以使得该集成电路对于声波半透彻的厚度;以及
连接于该集成电路的压电元件阵列;
该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
11.一种制造超声换能器探测头的方法,包括:
提供衰减背载基底;
将厚度为5-50微米的集成电路连接于该衰减背载基底,其中该集成电路对于声波是半透彻的;以及
将压电元件阵列连接于该集成电路;该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
12.根据权利要求11所述的方法,其中该衰减背载基底包括一种能够提供在5MHz下,10dB/cm至50dB/cm的衰减的材料。
13.根据权利要求11所述的方法,其中该衰减背载基底包括含有环氧化物和极高与极低声阻抗粒子的混合物的环氧复合材料。
14.根据权利要求11所述的方法,其中该集成电路的厚度足够小从而使得该集成电路对于声波半透彻。
15.根据权利要求11所述的方法,其中该集成电路包括硅基集成电路。
16.根据权利要求11所述的方法,其中该压电元件阵列包括二维阵列。
17.根据权利要求11所述的方法,其中该压电元件阵列包括一维阵列。
18.一种制造超声换能器探测头的方法,包括:
提供衰减背载基底,其中该衰减背载基底包括一种能够提供在5MHz下10dB/cm至50dB/cm的衰减的材料;
将集成电路连接于该衰减背载基底,其中该集成电路包括5微米以上且小于50微米并足够小使得该集成电路对于声波半透彻的厚度;以及
将压电元件阵列连接于该集成电路;该压电元件阵列具有设置在其阵列第一表面上的声波匹配层。
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US52701303P | 2003-12-04 | 2003-12-04 | |
US60/527,013 | 2003-12-04 | ||
PCT/IB2004/052626 WO2005055195A1 (en) | 2003-12-04 | 2004-12-01 | Implementing ic mounted sensor with high attenuation backing |
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CN1890707A CN1890707A (zh) | 2007-01-03 |
CN1890707B true CN1890707B (zh) | 2011-04-13 |
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US (1) | US20070189761A1 (zh) |
JP (1) | JP2007513563A (zh) |
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WO (1) | WO2005055195A1 (zh) |
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JP5377957B2 (ja) * | 2008-12-26 | 2013-12-25 | ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー | 超音波プローブの圧電振動子、超音波プローブ、超音波診断装置及び超音波プローブにおける圧電振動子の製造方法 |
US8207652B2 (en) * | 2009-06-16 | 2012-06-26 | General Electric Company | Ultrasound transducer with improved acoustic performance |
JP5591549B2 (ja) * | 2010-01-28 | 2014-09-17 | 株式会社東芝 | 超音波トランスデューサ、超音波プローブ、超音波トランスデューサの製造方法 |
WO2012112540A2 (en) * | 2011-02-15 | 2012-08-23 | Fujifilm Dimatix, Inc. | Piezoelectric transducers using micro-dome arrays |
JP2015038953A (ja) * | 2013-06-28 | 2015-02-26 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
JP5754660B2 (ja) | 2013-06-28 | 2015-07-29 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
JP5761540B2 (ja) | 2013-06-28 | 2015-08-12 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
WO2015068080A1 (en) * | 2013-11-11 | 2015-05-14 | Koninklijke Philips N.V. | Robust ultrasound transducer probes having protected integrated circuit interconnects |
JP6478070B2 (ja) | 2014-12-26 | 2019-03-06 | セイコーエプソン株式会社 | 圧電材料及びその製造方法、並びに圧電素子及び圧電素子応用デバイス |
CN106413563B (zh) * | 2015-08-25 | 2020-01-10 | 深圳迈瑞生物医疗电子股份有限公司 | 超声换能器 |
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JP6835954B2 (ja) * | 2016-08-30 | 2021-02-24 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 超音波トランスデューサアレイを備える撮像装置 |
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JP2007513563A (ja) | 2007-05-24 |
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US20070189761A1 (en) | 2007-08-16 |
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