CN1889812A - Etching removing method and etching solution in manufacturing print wiring substrate using semi-additive process - Google Patents
Etching removing method and etching solution in manufacturing print wiring substrate using semi-additive process Download PDFInfo
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- CN1889812A CN1889812A CNA2005100811746A CN200510081174A CN1889812A CN 1889812 A CN1889812 A CN 1889812A CN A2005100811746 A CNA2005100811746 A CN A2005100811746A CN 200510081174 A CN200510081174 A CN 200510081174A CN 1889812 A CN1889812 A CN 1889812A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Abstract
Provided are a copper etching solution and an etching method thereof for selectively etching a chemical copper coat seed layer of an electric copper coat serving as wiring region in a semi-additive method employed to manufacture a printed wiring board. The present invention relates to the following etching removing method and the selective etching solution: in the manufacturing method for a printed wiring board using a semi-additive method, a chemical copper coat seed layer is formed in an insulating resin layer, a pattern resist is produced, a conductive circuit is formed using the electro coppering, and then the above resist is removed; further, selectively etch using the selective etching solution to remove the unnecessary chemical copper coat, wherein the selective etching solution contains 0.2 to 15 weight% of hydrogen peroxide, 0.5 to 15 weight% of sulfuric acid, 0.5 to 5 ppm of bromine ion, and the mol ratio of hydrogen peroxide to sulfuric acid is less than 5. In addition, the present invention further relates to a etching method containing azole of 0.001 to 0.05 weight% and selective etching solution.
Description
Technical field
The present invention relates to copper etchant solution in the manufacturing of print wiring substrate using semi-additive to optionally the electroless copper as kind of layer being carried out etched engraving method and uses in the method as the electro-coppering at wiring position.
Background technology
In the manufacturing process of printed circuit board,, generally be to use electro-coppering and electroless copper for copper facing.Manufacture method as forming finer wiring has semi-additive process.This wiring forming method is undertaken by following process: at the chemical plating copper layer that forms on the insulating resin layer about 0.1～2 μ m, after forming the pattern resist layer, after utilizing the electrolytic copper plating to form conductor circuit, peel off resist layer, further unwanted chemical copper plating position is removed in etching.As etching solution, can use the persulfuric acid salt, hydrogen peroxide-sulfuric acid-alcohols, copper chloride, iron chloride etching solution, the amine etching solution (with reference to patent documentation 1,2,3,4) that use in the manufacturing of printed circuit board.
Yet, utilize these etching solutions, when etching chemistry copper plates, also etching electrolytic copper plating simultaneously, therefore there is following point: when utilizing the semi-additive process etching to remove unwanted chemical copper plating, utilize wiring width, the wiring thickness of the conductor circuit that the electrolytic copper plating forms to reduce.
As suppressing the method that wiring width attenuates, following method is arranged here: form copper metal coating in addition on wiring side or surface, the method (with reference to patent documentation 5,6) of the copper of kind of layer is removed in etching.Yet problems such as operation number increase such as metal coating beyond the existence formation copper and stripping process.
In addition, utilize the copper etchant solution of the aqueous solution that contains hydrogen peroxide, sulfuric acid, bromide ion and pyroles, be considered to up to now in order to improve the adhering shaggy etching solution (with reference to patent documentation 7,8) that makes of copper and resin.Form concavo-convex etching solution on the copper surface when these liquid are etching copper surfaces, bromide ion, pyroles are added as alligatoring etching solution auxiliary agent.Yet,, keep the smoothness angle on wiring surface to consider that waiting in expectation further improves these etching solutions from wiring width that suppresses conductor line and the minimizing of connecting up thickness.
[patent documentation 1] spy opens the 2003-69218 communique
[patent documentation 2] spy opens the 2003-60341 communique
[patent documentation 3] spy opens flat 2-60189 communique
[patent documentation 4] spy opens flat 4-199592 communique
[patent documentation 5] spy opens flat 9-162523 communique
[patent documentation 6] spy opens the 2003-78234 communique
[patent documentation 7] spy opens the 2000-64067 communique
[patent documentation 8] spy opens the 2003-3283 communique
Summary of the invention
The objective of the invention is in the printed wiring board manufacturing process that electrolytic copper plates, chemical copper is plated in utilizing electronics industry, utilize the big etching solution of etch-rate that etch-rate is little and the chemical copper plating is plated with respect to electrolytic copper of electro-coppering, optionally the chemical copper plating is removed in etching, suppress the wiring width of conductor circuit, the minimizing of wiring thickness, thereby suppress to open circuit, lack, and keep the flatness on wiring surface.
Present inventors are in order to solve above-mentioned problem, repeated to study intensively, the result has finished in the manufacturing of print wiring substrate using semi-additive, suppress etching as the electro-coppering at wiring position, the etching of the unwanted chemical copper plating of selective etch remove method and the aqueous solution of forming by hydrogen peroxide, sulfuric acid and bromide ion that in this engraving method, uses in further contain pyroles and the selection etching solution that obtains.
Promptly, the present invention relates to etching as described below removes method and selects etching solution: in the manufacturing of print wiring substrate using semi-additive, on insulating resin layer, form the kind layer of chemical copper plating, after forming the pattern resist layer, after utilizing electro-coppering to form conductor circuit, peel off resist layer, further use selection etching solution optionally etching is removed unwanted chemical copper plating, wherein, this selection etching solution contains the hydrogen peroxide of 0.2～15 weight %, the sulfuric acid of 0.5～15 weight % and the bromide ion of 0.5～5ppm, and the mol ratio of hydrogen peroxide/sulfuric acid is below 5.The invention further relates to the etching that contains the pyroles of 0.001～0.01 weight % in this selective etching liquid removes method and selects etching solution.
By the present invention, in the manufacturing of print wiring substrate using semi-additive, suppress etching as the electro-coppering at wiring position, selective etch is removed unwanted electroless plating copper, suppress the wiring width of conductor circuit, the minimizing of wiring thickness, thereby can suppress to open circuit, lack, and keep the smoothness on wiring surface.
Brief description of drawings
The result's of [Fig. 1] expression embodiment 1 key diagram.
The result's of [Fig. 2] expression embodiment 2 key diagram.
The result's of [Fig. 3] expression comparative example 1 key diagram.
The result's of [Fig. 4] expression comparative example 2 key diagram.
The result's of [Fig. 5] expression comparative example 3 key diagram.
Embodiment
Below, describe the present invention.
The etching method of removing of the present invention is in the manufacturing of print wiring substrate using semi-additive, on insulating resin layer, form the kind layer of chemical copper plating, after forming the pattern resist layer, after utilizing the electrolytic copper plating to form conductor circuit, peel off resist layer, further use and select the etching solution selective etch to remove unwanted chemical copper plating, remove in the method in this etching, used selection etching solution is the aqueous solution that contains hydrogen peroxide, sulfuric acid, bromide ion, further is the aqueous solution that contains pyroles in this aqueous solution.
Select the concentration of the hydrogen peroxide in the etching solution to handle with 0.2～15 weight %, especially 0.5～10 weight % is suitable, more preferably 0.5～3 weight %.If be that the management of concentration of hydrogen peroxide becomes easily more than the 0.2 weight %, and grinding rate is enough, on the other hand,, therefore, control amount of grinding easily if concentration of hydrogen peroxide is that it is suitable that etching speed becomes below the 15 weight %.It should be noted that as required and can also add known stabilizer of hydrogen peroxide such as organic carboxylic acids, organic amine compound.
Select the sulfuric acid concentration in the etching solution to be suitable for 0.5～15 weight %.If sulfuric acid concentration is more than the 0.5 weight %, the solution management during processing becomes easily, if sulfuric acid concentration is below 15%, in the process of fusion copper, the solubility of copper sulphate does not descend, and can not separate out copper sulfate crystal.The mol ratio of hydrogen peroxide/sulfuric acid is preferably below 5, is preferably below 2 especially.
Select the bromide ion concentration in the etching solution to be preferably 0.5ppm～5ppm, be preferably 1～3ppm especially.If be more than the 0.5ppm, the etch-rate of electro-coppering can be below 0.5 μ m/min, and is difficult to make surface roughening.If be below the 5ppm, the etch-rate of chemical copper plating can not reduce, and it is abundant that chemical copper is plated the etching selectivity of relative electrolytic copper plating.As bromide ion, can use KBr, sodium bromide and bromic acid and salt thereof etc.
The additive effect of bromide ion is as follows: for the electro-coppering as the wiring position, along with the addition etch-rate descends, for the chemical copper plating, in a certain specific addition, etch-rate does not descend.Therefore, can carry out the selection etching of chemical copper plating, and the etch-rate of chemical copper plating can be stablized.
Relative therewith, about the interpolation of chloride ion, in electro-coppering and chemical copper plating, increase with addition, etch-rate all descends simultaneously, and therefore, the etching selectivity of chemical copper plating reduces (with reference to described comparative example 1).About the interpolation of fluorine ion, in electrolytic copper plating, chemical copper plating, even addition increases, etch-rate also almost constant (with reference to described comparative example 2).
Pyroles is added as the auxiliary agent that the etching that increases the electrolytic copper plating suppresses effect.By adding, suppress etching itself, therefore, do not make surface roughening.As pyroles, can enumerate tetrazolium class, triazole type.The tetrazolium class can be enumerated 1H-tetrazolium, 5-methyl isophthalic acid H-tetrazolium, 5-phenyl-1H-tetrazolium, 5-amino-1H-tetrazolium etc., particularly can use 5-amino-1H-tetrazolium suitably.Triazole type can be enumerated 1H-1, and 2,4-triazole, 3-amino-1,2,4-triazole.
Selecting the concentration of the pyroles in the etching solution is 0.001～0.05 weight %, 0.001～0.01 weight % more preferably, if be more than the 0.001 weight %, can obtain the effect of additive fully, in addition, if be below the 0.05 weight %, inhibitor effect can be not too high, the etching period of copper all shortens in chemical copper plating and electrolytic copper plating, can suppress the minimizing of wiring width.
The etch-rate that selection etching solution of the present invention is electro-coppering is the following etching solution of 0.5 μ m/min.If be below the 0.5 μ m/min, wiring width, wiring thickness are difficult to reduce.In addition, etching solution of the present invention is that the etch-rate of chemical copper plating is the etching solution more than 5 times of the etch-rate of electrolytic copper plating.If be more than 5 times, can shorten the etching of chemical copper plating and remove the time, thereby the etching period of electrolytic copper plating is shortened, the etch quantity of electrolytic copper plating reduces, and can suppress the minimizing of wiring width, wiring thickness.
Can also add selection etching solution of the present invention respectively, thereby reach the content of stipulating when using each composition, can also mix in advance.Therefore, modulate dense liquid after, suitable is is diluted with water to the content of the present invention's regulation and uses.The temperature of etch processes is restriction especially not, can at random temperature be set to be consistent with desirable etching speed in 20～50 ℃ scope.
About the management of etching solution, owing to the treating capacity according to copper, rising and composition that copper concentration in the liquid can take place descend, and therefore, preferably calculate each group component respectively according to analyzing, and replenish not enough part.As this compensation process, no matter be the method for individually replenishing each composition, still the constituent analysis by copper dissolution amount, treatment fluid, in advance with the required not enough group component of this mixed, be so-called by replenishing the method for liquid, can both obtain the stable treated face continuously.At this moment, by waste part divisional processing liquid, can suppress along with the copper concentration that contains in the treatment fluid rise with the separating out of copper sulfate crystal.
Selection etching solution of the present invention can be used for the machine that uses at known engraving method, and restriction especially.For example can enumerate the injection etching machine that is used for gunite.
As mentioned above, selection etching solution of the present invention is that the plating of unwanted chemical copper is removed in optionally etching, suppresses excessive alligatoring, the aqueous solution of the surperficial flatness that can keep connecting up.Therefore, from can suppressing owing to the viewpoint of the alligatoring of carrying out the wiring surface that over etching causes in order slightly to come to the surface is considered, selection etching solution of the present invention does not preferably contain the composition that demonstrates the effect of excessively slightly coming to the surface, for example silver etc.
Like this, etching of the present invention is removed method by using above-mentioned selection etching solution, can remove the chemical copper plating by selective etch, thereby can suppress the wiring width of conductor circuit, the minimizing of wiring thickness, can suppress to open circuit, lack, and keep the flatness on wiring surface.
[embodiment]
Below, by embodiment and comparative example, the present invention will be described in more detail, but the present invention is not limited to these examples.
Add bromide ion in by the copper of the sulfuric acid of the hydrogen peroxide of 0.8 weight %, 4 weight %, concentration 20g/l, etching solution that surplus water is formed, making its concentration is 0ppm～5ppm, and gained solution is regulated.Use chemical copper plated substrate (electroplating thickness 1 μ m), electrolytic copper plated substrate (electroplating thickness 20 μ m), and, spray etch processes spraying under the condition of pressing 30 ℃ of 0.1MPa, liquid temperature.Utilize the weight difference of handling front-back baseboard, calculate etch quantity, and the etch-rate of unit of account time.In addition, the etch-rate of chemistry copper plating is with respect to the ratio of the etch-rate of electro-coppering.The results are shown in Fig. 1.
To make its concentration be the 0.005 weight % except adding 5-amino-1H-tetrazolium, operates similarly to Example 1.The results are shown in Fig. 2.
Comparative example 1
Add chloride ion in by the copper of the sulfuric acid of the hydrogen peroxide of 0.8 weight %, 4 weight %, concentration 20g/l, etching solution that surplus water is formed, making its concentration is 0ppm～5ppm, and gained solution is regulated.Use chemical copper plated substrate (electroplating thickness 1 μ m), electrolytic copper plated substrate (electroplating thickness 20 μ m), and, spray etch processes spraying under the condition of pressing 30 ℃ of 0.1MPa, liquid temperature.Utilize the weight difference of handling front-back baseboard, calculate etch quantity, and the etch-rate of unit of account time.In addition, the etch-rate of chemistry copper plating is with respect to the ratio of the etch-rate of electro-coppering.The results are shown in Fig. 3.
Comparative example 2
Except chloride ion being become fluorine ion, similarly operate with comparative example 1.The results are shown in Fig. 4.
Comparative example 3
To make its concentration be the 0.005 weight % except adding 5-amino-1H-tetrazolium, similarly operates with comparative example 1.The results are shown in Fig. 5.
Use is utilized and is sprayed etching machine by the sulfuric acid of the hydrogen peroxide of 1 weight %, 5 weight %, 1ppm bromide ion, the copper of concentration 20g/l, the 10L surface treatment liquid that surplus water is formed, and sprays at 0.1MPa and presses, handles under 30 ℃ of treatment temperatures.
Estimate on the kind layer that substrate is to use resin surface and form the substrate of 1 μ m chemical copper plating or utilize the electrolytic copper plating to form the substrate of the wiring of production line (line)/space (space)=30 μ m/30 μ m.Etching period is the time that the chemical copper plating on the space is removed in etching.Utilize light microscope determining to handle the wiring width of front and back, calculate the reduction of wiring width.In addition, utilize the wiring surface of SEM observation, the affirmation of the surface configuration that connects up as electro-coppering.The results are shown in table 1.
Except add bromide ion make its concentration be 3ppm and 5-amino-1H-tetrazolium to make its concentration be the 0.005 weight %, operate similarly to Example 3.The results are shown in table 1.
Comparative example 4
Use is utilized and is sprayed etching machine by the hydrogen peroxide of 1 weight %, the sulfuric acid of 5 weight %, the copper of concentration 20g/l, the 10L surface conditioning agent that surplus water is formed, and sprays under pressure, 30 ℃ of treatment temperatures at 0.1MPa and handles.
Estimate on the kind layer that substrate is to use resin surface and form the substrate of 1 μ m chemical copper plating or utilize the electrolytic copper plating to form the substrate of the wiring of production line/space=30 μ m/30 μ m.Etching period is the time that the chemical copper plating on the space is removed in etching.Utilize light microscope determining to handle the wiring width of front and back, calculate the reduction of wiring width.In addition, utilize the wiring surface of SEM observation, the affirmation of the surface configuration that connects up as electro-coppering.The results are shown in table 1.
Comparative example 5
To make its concentration be the 0.005 weight % except adding 5-amino-1H-tetrazolium, similarly operates with comparative example 4.The results are shown in table 1.
Comparative example 6
To make its concentration be the 1ppm except adding chloride ion, similarly operates with comparative example 4.The results are shown in table 1.
[table 1]
| Etching period (second) | Wiring reduction (μ m) | The wiring list | |
| Embodiment | |||
| 3 | 50 | 0.9 | ○ |
| | 30 | 0.4 | ◎ |
| Comparative example 4 | 45 | 2.7 | ○ |
| Comparative example 5 | 30 | 2.0 | △ |
| Comparative example 6 | 180 | 2.2 | ○ |
The etching method of removing of the present invention is to select etching solution by using, in the manufacturing of print wiring substrate using semi-additive, can suppress etching as the electrolytic copper plating at wiring position, optionally unwanted chemical copper plating is removed in etching, suppress the wiring width of conductor circuit, the minimizing of wiring thickness, suppress to open circuit, lack, and keep the smoothness on wiring surface.
Claims (6)
1, method is removed in a kind of etching, in the manufacturing of print wiring substrate using semi-additive, on insulating resin layer, form the kind layer of chemical copper plating, after forming the pattern resist layer, after utilizing electro-coppering to form conductor circuit, peel off resist layer, further use selection etching solution optionally etching is removed unwanted chemical copper plating, wherein, this selection etching solution contains the hydrogen peroxide of 0.2～15 weight %, the sulfuric acid of 0.5～15 weight % and the bromide ion of 0.5～5ppm, and the mol ratio of hydrogen peroxide/sulfuric acid is below 5.
2, method is removed in etching as claimed in claim 1, and wherein, above-mentioned selection etching solution further contains the pyroles of 0.001～0.05 weight %.
3, method is removed in etching as claimed in claim 1, and wherein, above-mentioned selection etching solution further contains the pyroles of 0.001～0.01 weight %.
4, method is removed in each described etching as claim 1～3, and wherein, in above-mentioned selection etching solution, the chemical copper plating is more than 5 with the etch-rate ratio of electrolytic copper plating.
5, method is removed in each described etching as claim 1～3, and wherein, in above-mentioned selection etching solution, the etch-rate of electrolytic copper plating is below the 0.5 μ m/min.
6, remove the selection etching solution that uses in the method in each described etching of claim 1～5.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004191559 | 2004-06-29 | ||
| JP2004191559A JP4488188B2 (en) | 2004-06-29 | 2004-06-29 | Semi-additive process etchant for printed wiring board manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1889812A true CN1889812A (en) | 2007-01-03 |
Family
ID=35780184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100811746A Pending CN1889812A (en) | 2004-06-29 | 2005-06-29 | Etching removing method and etching solution in manufacturing print wiring substrate using semi-additive process |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4488188B2 (en) |
| KR (1) | KR101162370B1 (en) |
| CN (1) | CN1889812A (en) |
| TW (1) | TWI353201B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102199771A (en) * | 2010-03-26 | 2011-09-28 | Mec股份有限公司 | Copper etching solution and producing method of substrate |
| CN103510089A (en) * | 2012-06-29 | 2014-01-15 | 三菱瓦斯化学株式会社 | Liquid composition for etching and preparing method of multilayer printed wiring board using same |
| CN103966606A (en) * | 2014-05-06 | 2014-08-06 | 汕头超声印制板（二厂）有限公司 | Copper reduction etching liquid for printed circuit boards |
| CN104120427A (en) * | 2013-04-23 | 2014-10-29 | 三菱瓦斯化学株式会社 | Method of treating wiring substrate and wiring substrate manufactured by same |
| CN104170532A (en) * | 2012-03-16 | 2014-11-26 | 住友电木株式会社 | Manufacturing method for laminated board and printed wiring board |
| CN104651840A (en) * | 2013-11-22 | 2015-05-27 | 三菱瓦斯化学株式会社 | Etching composition and method for producing printed-wiring board using the same |
| TWI575110B (en) * | 2012-06-29 | 2017-03-21 | Mitsubishi Gas Chemical Co | The liquid composition for etching and the manufacturing method of the multilayer printed circuit board using the liquid composition |
| TWI627884B (en) * | 2013-08-01 | 2018-06-21 | Mitsubishi Gas Chemical Co | Manufacturing method of printed circuit board |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5273710B2 (en) * | 2007-11-27 | 2013-08-28 | メック株式会社 | Etching agent |
| KR102048495B1 (en) * | 2018-03-27 | 2019-11-25 | 김용석 | Etching solution for msap substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000064067A (en) * | 1998-06-09 | 2000-02-29 | Ebara Densan Ltd | Etching solution and roughening treatment of copper surface |
| JP4687852B2 (en) | 2001-06-25 | 2011-05-25 | 三菱瓦斯化学株式会社 | Surface treatment agent for copper and copper alloys |
| JP4032712B2 (en) * | 2001-11-22 | 2008-01-16 | 日立化成工業株式会社 | Method for manufacturing printed wiring board |
-
2004
- 2004-06-29 JP JP2004191559A patent/JP4488188B2/en not_active Expired - Fee Related
-
2005
- 2005-06-13 KR KR1020050050229A patent/KR101162370B1/en not_active IP Right Cessation
- 2005-06-27 TW TW094121364A patent/TWI353201B/en not_active IP Right Cessation
- 2005-06-29 CN CNA2005100811746A patent/CN1889812A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489004B (en) * | 2010-03-26 | 2015-06-21 | Mec Co Ltd | Etching solution for copper and substrate manufacturing method |
| CN102199771A (en) * | 2010-03-26 | 2011-09-28 | Mec股份有限公司 | Copper etching solution and producing method of substrate |
| CN102199771B (en) * | 2010-03-26 | 2015-08-19 | Mec股份有限公司 | The etching solution of copper and the manufacture method of substrate |
| CN104170532B (en) * | 2012-03-16 | 2017-02-22 | 住友电木株式会社 | Manufacturing method for laminated board and printed wiring board |
| CN104170532A (en) * | 2012-03-16 | 2014-11-26 | 住友电木株式会社 | Manufacturing method for laminated board and printed wiring board |
| CN103510089A (en) * | 2012-06-29 | 2014-01-15 | 三菱瓦斯化学株式会社 | Liquid composition for etching and preparing method of multilayer printed wiring board using same |
| TWI575110B (en) * | 2012-06-29 | 2017-03-21 | Mitsubishi Gas Chemical Co | The liquid composition for etching and the manufacturing method of the multilayer printed circuit board using the liquid composition |
| CN103510089B (en) * | 2012-06-29 | 2017-04-12 | 三菱瓦斯化学株式会社 | Liquid composition for etching and preparing method of multilayer printed wiring board using same |
| CN104120427A (en) * | 2013-04-23 | 2014-10-29 | 三菱瓦斯化学株式会社 | Method of treating wiring substrate and wiring substrate manufactured by same |
| CN104120427B (en) * | 2013-04-23 | 2017-11-28 | 三菱瓦斯化学株式会社 | The processing method of wiring substrate and the wiring substrate manufactured using this method |
| TWI627884B (en) * | 2013-08-01 | 2018-06-21 | Mitsubishi Gas Chemical Co | Manufacturing method of printed circuit board |
| CN104651840A (en) * | 2013-11-22 | 2015-05-27 | 三菱瓦斯化学株式会社 | Etching composition and method for producing printed-wiring board using the same |
| CN104651840B (en) * | 2013-11-22 | 2018-05-01 | 三菱瓦斯化学株式会社 | Etching composition and the manufacture method for having used its printed circuit board (PCB) |
| CN103966606A (en) * | 2014-05-06 | 2014-08-06 | 汕头超声印制板（二厂）有限公司 | Copper reduction etching liquid for printed circuit boards |
| CN103966606B (en) * | 2014-05-06 | 2016-04-06 | 汕头超声印制板（二厂）有限公司 | A kind ofly subtract copper etching solution for printed circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060046430A (en) | 2006-05-17 |
| TW200607413A (en) | 2006-02-16 |
| TWI353201B (en) | 2011-11-21 |
| KR101162370B1 (en) | 2012-07-04 |
| JP2006013340A (en) | 2006-01-12 |
| JP4488188B2 (en) | 2010-06-23 |
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