CN1888127A - Molecular beam epitaxy process of growing GaAs-base InSb film - Google Patents
Molecular beam epitaxy process of growing GaAs-base InSb film Download PDFInfo
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- CN1888127A CN1888127A CN 200610010308 CN200610010308A CN1888127A CN 1888127 A CN1888127 A CN 1888127A CN 200610010308 CN200610010308 CN 200610010308 CN 200610010308 A CN200610010308 A CN 200610010308A CN 1888127 A CN1888127 A CN 1888127A
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Abstract
The present invention is molecular beam epitaxy process of InSb film on GaAs base, and relates to the preparation of InSb film for Hall device, magnetic resistance transducer and photoelectronic detector. The technological process includes the first growth of buffering GaAs layer on GaAs substrate for reducing lattice mismatch between GaAs and InSb under the conditions of substrate temperature 600 deg.c, Ga beam flow of 6x10<-7> mbar and As beam flow 1.2x10<-5> mbar; the subsequent growth of low temperature buffering InSb layer under the conditions of substrate temperature 320 deg.c, In beam flow of 6x10<-8> mbar and Sb beam flow of 2.4x10<-7> mbar; and final growth of epitaxial InSb layer under the conditions of substrate temperature 410 deg.c, In beam flow of 4.5x10<-7> mbar and Sb beam flow of 2.7x10<-6> mbar. Thus prepared epitaxial InSb film has complete crystallization, smooth surface, electron mobility at room temperature up to 4.35x10<4> sq cm/V.s and carrier concentration at room temperature up to 3.42x10<16>/cu cm.
Description
Technical field
The present invention relates to a kind of extension preparation technology who is used in the InSb film in hall device, magnetoresistive transducer and the field of photodetectors, be specifically related to the Technology of the molecular beam epitaxial growth of GaAs base InSb film.
Background technology
The InSb film is that recent two decades comes the domestic and international research focus because its excellent photoelectric properties and magnetoresistive characteristic more and more are subject to people's attention.The InSb film has been widely used in making hall device, magnetoresistive transducer and photodetector, and its preparation method comprises vacuum vapour deposition, magnetron sputtering method, chemical Vapor deposition process and molecular beam epitaxy.Aspect photodetector application, adopt epitaxy InSb film on GaAs substrate or the Si substrate, help large-area InSb detector array and GaAs base or the basic signal of Si read that to carry out monolithic integrated with processing element.There is bigger lattice mismatch (14.6%) between the InSb film of hetero epitaxy and the substrate GaAs,, in film, produces a large amount of defectives, influenced the quality of film and the performance of device because lattice mismatch causes highdensity at the interface dislocation.Therefore, the Technology of molecular beam epitaxial growth of obtaining the InSb film of GaAs base single crystal epitaxial, high electron mobility has the using value of reality.
Summary of the invention
In order to reduce the bigger lattice mismatch of GaAs and InSb, obtain that surfaceness on the GaAs substrate is little, the InSb film of perfect crystalline and good electrical property, the present invention proposes a kind of molecular beam epitaxy accretion method of GaAs base InSb film.
Concrete steps of the present invention are:
A, degasification, deoxidize: at first 400 ℃ of following bake outs 1 hour, substrate was warmed up to 580 ℃ of deoxidizes to the GaAs substrate then;
B, growth GaAs buffer layer (this step can be omitted): during the GaAs buffer growth, controlled temperature is 600 ℃, and the Ga line is 6 * 10
-7Mbar, As line are 1.2 * 10
-5Mbar, growth time are 20 minutes;
C, growing low temperature InSb buffer layer: during low temperature InSb buffer growth, controlled temperature is 320 ℃～330 ℃, and the In line is 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growth time are 8～10 minutes;
D, growth InSb epitaxial film: during the InSb outer layer growth, controlled temperature is 410 ℃, and the In line is 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth time are 2 hours.
The present invention adopts the semi-insulating substrate of GaAs (001) exempt to clean, and uses molecular beam epitaxial device growth GaAs buffer layer and low temperature InSb buffer layer earlier on pretreated GaAs substrate, the satisfy the demand InSb epitaxial film of thickness of regrowth.The about 0.2 μ m GaAs buffer layer of first grow thick can reduce the influence of substrate surface impurity on the GaAs substrate, improves the crystalline quality of subsequent thin film simultaneously; The growth needs of low temperature InSb buffer layer is accurately controlled thickness at 30～40nm, and this can make the surfaceness of follow-up InSb epitaxial film little and electrical property is better; The growth temperature of InSb epitaxial film is chosen in and InSb (1 * 3) structure above 20 ℃ (being approximately 410 ℃) again occurs, and the surfaceness of the InSb epitaxial film of growing under this growth conditions is less and electrical property is better.Adopt the perfect crystalline that the molecular beam epitaxial growth processing method of GaAs base InSb film of the present invention prepares, the room temperature electronic mobility of ganoid extension InSb film can reach 4.35 * 10
4Cm
2V
-1s
-1, the room temperature carrier concentration can reach 3.42 * 10
16Cm
-3, for the making of GaAs base photoelectric device provides the material technology means.
Embodiment
Embodiment one: present embodiment is carried out according to following steps:
1, exempt from GaAs (001) substrate that cleans at first (preparation room) 400 ℃ of following bake outs 1 hour, substrate (importing the growth room into) is warmed up to about 580 ℃ and sloughs oxide film under the As atmosphere protection then;
2, substrate heats up 20 ℃, and control Ga line is 6 * 10
-7Mbar, As line are 1.2 * 10
-5Mbar grew 20 minutes, generated the GaAs buffer layer;
3, substrate is cooled to 320 ℃, and control In line is 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar grew 8～10 minutes, generated low temperature InSb buffer layer;
4, substrate is warming up to 410 ℃ under the Sb atmosphere protection, and control In line is 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar grew 2 hours, generated the InSb epitaxial film;
5, substrate is cooled to 300 ℃ under the Sb atmosphere protection, closes the Sb shutter, and substrate is cooled to room temperature.
Each source furnaceman makes temperature and is as the criterion to line to produce institute in the present embodiment.The growth of the 2nd step GaAs buffer layer can be omitted.The growth temperature of the 2nd step GaAs buffer layer is sloughed more than the oxide film 20 ℃ with the GaAs substrate and is as the criterion, and its thickness is approximately 0.2 μ m.The growth velocity of the 3rd step low temperature InSb buffer layer determines that by high electron energy diffractometer oscillation of intensity curve its thickness is 30～40nm.The 4th step InSb outer layer growth temperature with occur InSb (1 * 3) again structure be as the criterion for above 20 ℃, its thickness is approximately 0.7～1.2 μ m.
In the present embodiment, the GaAs substrate is the semi-insulating substrate of GaAs (001) of exempting to clean, and epitaxially grown thin-film material is InSb, the equipment that epitaxy is used as molecular beam epitaxial device (VG, V-80H).
Embodiment two: in the present embodiment, the structure of film growth is followed successively by GaAs buffer layer, low temperature InSb buffer layer and InSb epitaxial film.Wherein: 600 ℃ of underlayer temperatures, Ga line are 6 * 10
-7Mbar, As line are 1.2 * 10
-5Mbar, growth GaAs buffer layer 0.2 μ m; 320 ℃ of underlayer temperatures, In line are 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growing low temperature InSb buffer layer 35nm; 410 ℃ of underlayer temperatures, In line are 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth InSb epitaxial film 1.2 μ m.InSb film twin crystal X-ray diffraction InSb (004) the diffraction peak peak width at half height 503 that growth obtains ", surface, 5 * 5 μ m constituencies r.m.s. roughness 5.54nm, electronic mobility 4.35 * 10 under the room temperature
4Cm
2v
-1s
-1, carrier concentration 1.84 * 10
16Cm
-3
Embodiment three: in the present embodiment, the structure of film growth is followed successively by GaAs buffer layer, low temperature InSb buffer layer and InSb epitaxial film.Wherein: 600 ℃ of underlayer temperatures, Ga line are 6 * 10
-7Mbar, As line are 1.2 * 10
-5Mbar, growth GaAs buffer layer 0.2 μ m; 320 ℃ of underlayer temperatures, In line are 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growing low temperature InSb buffer layer 35nm; 410 ℃ of underlayer temperatures, In line are 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth InSb epitaxial film 0.7 μ m.InSb film twin crystal X-ray diffraction InSb (004) the diffraction peak peak width at half height 764 that growth obtains ", surface, 5 * 5 μ m constituencies r.m.s. roughness 4.35nm, electronic mobility 2.40 * 10 under the room temperature
4Cm
2v
-1s
-1, carrier concentration 3.42 * 10
16Cm
-3
Embodiment four: in the present embodiment, the structure of film growth is followed successively by low temperature InSb buffer layer and InSb epitaxial film.Wherein: 320 ℃ of underlayer temperatures, In line are 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growing low temperature InSb buffer layer 40nm; 410 ℃ of underlayer temperatures, In line are 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth InSb epitaxial film 1.2 μ m.InSb film twin crystal X-ray diffraction InSb (004) the diffraction peak peak width at half height 608 that growth obtains ", surface, 5 * 5 μ m constituencies r.m.s. roughness 3.89nm, electronic mobility 3.33 * 10 under the room temperature
4Cm
2v
-1s
-1, carrier concentration 2.09 * 10
16Cm
-3
Claims (9)
1, the molecular beam epitaxy accretion method of GaAs base InSb film is characterized in that described method is: a, degasification, deoxidize: at first 400 ℃ of following bake outs 1 hour, substrate was warmed up to 580 ℃ of deoxidizes to the GaAs substrate then; B, growth GaAs buffer layer: during the GaAs buffer growth, controlled temperature is 600 ℃, and the Ga line is 6 * 10
-7Mbar, As line are 1.2 * 10
-5Mbar, growth time are 20 minutes; C, growing low temperature InSb buffer layer: during low temperature InSb buffer growth, controlled temperature is 320 ℃～330 ℃, and the In line is 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growth time are 8～10 minutes; D, growth InSb epitaxial film: during the InSb outer layer growth, controlled temperature is 410 ℃, and the In line is 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth time are 2 hours.
2, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 1, the thickness that it is characterized in that described GaAs buffer layer are 0.2 μ m.
3, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 1, the thickness that it is characterized in that described low temperature InSb buffer layer is 30～40nm.
4, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 1, the thickness that it is characterized in that described InSb epitaxial film are 0.7～1.2 μ m.
5, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 1 is characterized in that described GaAs substrate is the semi-insulating substrate of GaAs of exempting to clean.
6, the molecular beam epitaxy accretion method of GaAs base InSb film is characterized in that described method is: a, degasification, deoxidize: at first 400 ℃ of following bake outs 1 hour, substrate was warmed up to 580 ℃ of deoxidizes to the GaAs substrate then; B, growing low temperature InSb buffer layer: during low temperature InSb buffer growth, controlled temperature is 320 ℃～330 ℃, and the In line is 6 * 10
-8Mbar, Sb line are 2.4 * 10
-7Mbar, growth time are 8～10 minutes; C, growth InSb epitaxial film: during the InSb outer layer growth, controlled temperature is 410 ℃, and the In line is 4.5 * 10
-7Mbar, Sb line are 2.7 * 10
-6Mbar, growth time are 2 hours.
7, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 6, the thickness that it is characterized in that described low temperature InSb buffer layer is 30～40nm.
8, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 6, the thickness that it is characterized in that described InSb epitaxial film are 0.7～1.2 μ m.
9, the molecular beam epitaxy accretion method of GaAs base InSb film according to claim 6 is characterized in that described GaAs substrate is the semi-insulating substrate of GaAs of exempting to clean.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013143018A1 (en) * | 2012-03-26 | 2013-10-03 | 北京通美晶体技术有限公司 | Iiiα-va group semiconductor single crystal substrate and method for preparing same |
| CN109616403A (en) * | 2018-12-04 | 2019-04-12 | 云南师范大学 | The optimization method of molecular beam epitaxial growth AlInAsSb super crystal lattice material |
| CN114232085A (en) * | 2021-12-06 | 2022-03-25 | 中国电子科技集团公司第五十五研究所 | Method for epitaxially growing InGaAs on InP substrate |
| CN116623285A (en) * | 2023-07-21 | 2023-08-22 | 苏州晶歌半导体有限公司 | Method for cleaning graphite disc |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6288318A (en) * | 1985-10-14 | 1987-04-22 | Sharp Corp | Semiconductor device |
| CN100396816C (en) * | 2004-07-30 | 2008-06-25 | 中国科学院上海微系统与信息技术研究所 | Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013143018A1 (en) * | 2012-03-26 | 2013-10-03 | 北京通美晶体技术有限公司 | Iiiα-va group semiconductor single crystal substrate and method for preparing same |
| CN109616403A (en) * | 2018-12-04 | 2019-04-12 | 云南师范大学 | The optimization method of molecular beam epitaxial growth AlInAsSb super crystal lattice material |
| CN114232085A (en) * | 2021-12-06 | 2022-03-25 | 中国电子科技集团公司第五十五研究所 | Method for epitaxially growing InGaAs on InP substrate |
| CN114232085B (en) * | 2021-12-06 | 2024-02-06 | 中国电子科技集团公司第五十五研究所 | Method for epitaxial growth of InGaAs on InP substrate |
| CN116623285A (en) * | 2023-07-21 | 2023-08-22 | 苏州晶歌半导体有限公司 | Method for cleaning graphite disc |
| CN116623285B (en) * | 2023-07-21 | 2023-10-13 | 苏州晶歌半导体有限公司 | Method for cleaning graphite disc |
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