CN109616403A - The optimization method of molecular beam epitaxial growth AlInAsSb super crystal lattice material - Google Patents
The optimization method of molecular beam epitaxial growth AlInAsSb super crystal lattice material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000005457 optimization Methods 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims description 13
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 6
- 230000003746 surface roughness Effects 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 33
- 229910017115 AlSb Inorganic materials 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 238000001228 spectrum Methods 0.000 claims description 13
- 238000007872 degassing Methods 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000003281 allosteric effect Effects 0.000 claims description 5
- 230000009466 transformation Effects 0.000 claims description 5
- 239000011435 rock Substances 0.000 claims description 4
- 238000000097 high energy electron diffraction Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009416 shuttering Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
The invention discloses a kind of optimization methods of molecular beam epitaxial growth short-wave infrared AlInAsSb superlattices, it the steps include: to measure the source oven temperature degree of group iii elements and the fiducial temperature T of corresponding line value and its corresponding line value of group-v element and molecular beam epitaxial growth in AlInAsSbc, and the line value ratio for defining group-v element and group iii elements is respectively Sb/Al and As/In；Sb/Al value is set as fixed value A, As/In value is variate-value x, and the Xrd atlas analysis by comparing different x values determines the optimum value x of As/Ini；Similarly, As/In value is set as optimum value xi, Sb/Al value is variate-value y, and the Xrd atlas analysis by comparing different y values determines the optimum value y of Sb/Ali;According to fiducial temperature TcGrowth temperature of the AlInAsSb superlattices on GaSb substrate is adjusted with 15 °C for step-length, and its optimum growth temp is determined according to the surface roughness of AFM map.By the good AlInAsSb material of the available quality of materials of the optimization method, the method is simple, efficiently.
Description
Technical field
Materials A lInAsSb superlattices are detected using molecular beam epitaxy technique growth short-wave infrared the invention discloses a kind of
Optimization method, belong to field of semiconductor materials.
Background technique
Nowadays, short-wave infrared (SWIR) detector of 1 to 3 micron waveband is with important application prospects in Military and civil fields,
These fields include secure communication, astronomical observation, gas analysis, geoscience etc..The camera for carrying SWIR imaging can be compared
The image of traditional Visible Light Camera higher resolution.In addition, wave band imaging can carry out passive and Active Imaging.Therefore, it
There is very important application value in military and civilian field.Up to the present, many material systems, such as mercury cadmium telluride HgCdTe
(MCT) and indium gallium arsenic InxGa1-xAs has been solved the problems, such as in this wave band very much.They pass through the component for adjusting material
Material cutoff wavelength is set to respond short wave ranges.However, being based on InxGa1-xAs infrared detector has one to the range of cutoff wavelength
A little limitations, when cutoff wavelength is more than 1.7 μm, the defect due to caused by lattice mismatch declines the performance of detector rapidly.Base
In the infrared detector of HgCdTe 1-3 μ m can be covered by changing the molar constituent of Cd.However this infrared detector
Material growth technique requires high, it is also necessary to which the large-area uniformity of complicated device fabrication, material is poor, so that such device
Application be very limited.
In contrast, it is based on AlxIn1-xAsySb1-yThe quaternary compound infrared detector of (hereinafter referred to as AlInAsSb) is
A kind of very promising photoelectric device, because it can be by adjusting the value of x, y to reach and the substrates phases such as InP, InAs, GaSb
Matching.Changing aluminium component can also be by band gap from the aluminium of 0.25 eV(0%) it is adjusted to the aluminium of 1.18 eV(72%), this corresponds to 5
To 1.05 μm of cutoff wavelength range.
AlInAsSb material has many advantages that such as material non-toxic, growth technique is simple, manufacturing cost is low, bandwidth is flexible
It is adjustable, and since it effectively inhibits auger recombination with very big electron effective mass.The super crystal lattice material by
InAs and AlSb alternating growth composition can significantly reduce GR dark current, trap auxiliary and interband tunnel dark current, this will be improved
The photoelectric properties of material.But AlInAsSb is a kind of quaternary alloy material, growth difficulty is bigger than ternary material, so of the invention
Start with from the preparation of optimization material, focuses on solving the growth question of high-quality material.
Summary of the invention
The object of the present invention is to provide a kind of molecular beam epitaxy technique growth short-wave infrared detection materials A lInAsSb is super brilliant
The optimization method of lattice.
Realize the optimization method the technical scheme is that molecular beam epitaxial growth AlInAsSb super crystal lattice material, packet
Include following steps:
A, the source oven temperature degree of group iii elements Al, In and corresponding line value and five races when measurement grows AlInAsSb material first
The line value of elements A s, Sb and the fiducial temperature of molecular beam epitaxial growth, and define the line of group-v element and group iii elements
The ratio (five or three ratio) of value is respectively Sb/Al ratio and As/In ratio.
B, set the value of Sb/Al ratio as a certain fixed value A(A any fixed value between 1-20), As/In ratio
Value is that variate-value x(x value changes between 1-20), prepared AlInAsSb superlattices material when by comparing different x values
The XRD spectrum of material analyzes the optimum value x for determining As/Ini, then, the value of As/In is set as optimum value xi, the value of Sb/Al
For variate-value y, the XRD spectrum of prepared AlInAsSb super crystal lattice material when by comparing different y values is analyzed and determines Sb/Al
Optimum value yi。
C, with TcFor benchmark temperature, growth temperature of the AlInAsSb superlattices on GaSb substrate is adjusted, is step with 15 °C
Length is changed, and carries out AFM test, and the rms surface roughness measured according to AFM to AlInAsSb sample obtained
It determines its optimum growth temp, i.e., is adjusted according to growth temperature of the fiducial temperature to GaSb substrate with 15 °C for step-length, root
Optimum growth temp of the AlInAsSb superlattices on GaSb substrate is determined according to the rms surface roughness of AFM map.
Further, step A the following steps are included:
A1, gallium antimonide substrate is successively subjected to degasification in Sample Room and surge chamber；
A2, the tip/base temperature value (i.e. source oven temperature degree) for adjusting group iii elements source furnace, until its line value reaches group iii elements
Line value corresponding to the required speed of growth；According to the ratio of Sb/Al and As/In needed for the line value of group iii elements and growth material
Value, calculates line value required for group-v element Sb and As, further measures needle-valve value corresponding thereto；
A3, the GaSb substrate Jing Guo degasification is sent into growth room, is warming up to 620 °C under antimony atmosphere protection, and the temperature into
Row deoxidation；
A4, the GaSb substrate Jing Guo deoxidation is cooled to 540 °C, and in the temperature growth gallium antimonide buffer layer；
A5, to gallium antimonide buffer growth after, GaSb substrate is continued to cool down, observation gallium antimonide surface structure again variation,
After GaSb substrate surface × 3 again allosteric transformation be × 5 structures and after remaining unchanged again, increase GaSb underlayer temperature until GaSb substrate
Surface × 5 again structure be re-converted to × 3 again structure when, which is set to the allosteric transformation temperature again of GaSb substrate, and made
For benchmark temperature Tc。
Further, in step A5, when the structure again on observation gallium antimonide surface changes, reflected high energy electron diffraction is used
Device.
Further, the growth for editing AlInAsSb super crystal lattice material on computers controls program, includes the following steps:
1. growing high temperature gallium antimonide buffer layer, setting GaSb underlayer temperature is Tc+110 °C, opens Ga, Sb shutter, remaining shutter closes
It closes；
2. GaSb underlayer temperature to be down to the growth temperature of AlInAsSb material setting, AlSb barrier layer is grown, it is fast to open Al, Sb
Door, remaining shutter close；
3. keeping GaSb underlayer temperature constant, the AlInAsSb superlattice structure in 40 periods is grown, succession is successively are as follows:
AlSb,AlAs,AlSb,Sb,In,InAs,In,Sb；
4. keeping GaSb underlayer temperature constant, AlSb barrier layer is grown, opens Al, Sb shutter, remaining shutter close；
5. keeping GaSb underlayer temperature constant, GaSb cap rock is grown, opens Ga, Sb shutter, remaining shutter close；
6. opening Sb shutter, Sb shutter, the Sb during cooling are closed when underlayer temperature is down to 370 DEG C under Sb atmosphere protection
Shutter is always on, until temperature be lower than 370 DEG C, complete the editor of growth procedure and operation.
Further, the speed of growth used when growing AlInAsSb superlattices is respectively as follows: InAs=0.4ML/s(atom
Layer/the second), AlSb=AlAs=0.4ML/s(atomic layer/second).
Further, in step B, XRD spectrum is provided by high-resolution X-ray double-crystal diffractometer.
Further, in step B, optimum value xiWith optimum value yiIt is defended by comparison XRD spectrum substrate peak and superlattices zero level
Star peak, two peaks closest to when value be optimum value.
Further, in step C, AFM map is provided by atomic force microscope.
Further, in step C, the growth temperature value range of GaSb substrate is in Tc ± 30 °C.
Further, in step C, the AFM map of the different material of several growth temperatures is compared, wherein rms surface
The growth temperature of material corresponding to the smallest AFM map of roughness is the optimum growth temp of AlInAsSb material.
Compared with prior art, the invention has the advantages that present system provide AlInAsSb material optimization it is raw
Long method can obtain the good AlInAsSb material of quality of materials by the optimization method, for production AlInAsSb in next step
Infrared detector lays the foundation.
Detailed description of the invention
Fig. 1 is the XRD spectrum of the AlInAsSb material prepared when changing As/In value.
Fig. 2 is the XRD spectrum of the AlInAsSb material prepared when changing Sb/Al value.
Fig. 3 is the AFM surface topography map of the AlInAsSb material grown in different temperatures.
Fig. 4 is XRD the and AFM map using the AlInAsSb of the conditioned growth optimized.
Specific embodiment
In the present embodiment, a kind of Optimal Growing method of shortwave AlInAsSb super crystal lattice material is provided.Optimization of material
Structure used by growing method is from top to bottom successively are as follows: the AlSb gesture of GaSb substrate, the GaSb buffer layer of 200nm thickness, 30nm
Barrier layer, AlInAsSb superlattices, the AlSb barrier layer of 30nm and the GaSb cap rock of 20nm in 40 periods.Wherein, on superlattices
Under AlSb layer be movement for limiting carrier, preferably to carry out used in PL spectrum test.This method uses alloy skill
Art prepares AlInAsSb super crystal lattice material, and shuttering sequence is successively are as follows: the circle AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb(
Face sequence is optimized sequence).Optimization method of the invention comprising the following specific steps
(1) the pre- degasification of substrate: the GaSb substrate of 2 inches of twin polishings is put into intro chamber, is reduced to 1.6 × 10 to vacuum degree-6When Torr, intro chamber temperature is increased to 200 DEG C and is kept for one hour, vacuum degree needs≤1.6 × 10 in temperature-rise period- 6Torr.5.0 × 10 are down to vacuum degree-8When Torr, substrate terminates in the degasification of intro chamber.Degasification will be passed through in intro chamber
Substrate be transported on the degasification pallet of buffer chamber, be warming up to 420 DEG C, and kept for 1 hour, be down to 5.0 × 10 to vacuum degree-8
When Torr or less, the degasification of buffer chamber terminates.
(2) pass through the pre- degasification twice outside growth room, growth room's degasification, there are also some defects for substrate surface, such as
Fruit direct extension dissimilar materials at this time, can generate a large amount of defects, so needing the GaSb buffer layer of epitaxial growth 200nm thickness.
(3) source oven temperature degree and line: the growth rate of GaSb buffer layer, AlSb and InAs used in growth course are measured
Respectively 0.5ML/s, 0.4ML/s and 0.4ML/s(are determined according to the data of previous experiments).Adjust the temperature of the source Ga, Al, In furnace
Degree, making the line value of Ga, Al and In is respectively 9.47 × 10-8 Torr、1.80×10-7 Torr and 3.84 × 10-7 Torr is right
The Ga source oven temperature degree answered is tip/base=1079/909 DEG C, and Al source oven temperature degree is tip/base=1077/1127 DEG C, the source In furnace
Temperature is tip/base=949/799 DEG C.Sb line needed for growing high temperature GaSb buffer layer is determined by Sb/Ga=13.1, is adjusted
Sb needle-valve value makes Sb line reach 1.24 × 10-6Torr meets the growth requirement of high temperature GaSb, and corresponding Sb needle-valve value is 242.
The required As and Sb line value for wherein growing AlInAsSb superlattice structure meets following relationship As/In=6, and Sb/Al=6 are adjusted
Whole As needle-valve value and Sb needle-valve value make As line value and Sb line value respectively reach 2.31 × 10-6Torr and 1.08 × 10-6
Torr, corresponding As needle-valve value and Sb needle-valve value are respectively 231 and 210.
(4) substrate Jing Guo pre- degasification: being sent to the substrate pallet of growth chamber by substrate deoxidation, increases underlayer temperature extremely
620 DEG C and substrate bracket disc spins (10 revs/min) are opened, when underlayer temperature reaches 400 DEG C, tunes up Sb needle-valve value to 242, and
Sb is opened to open the door.When underlayer temperature reaches 620 DEG C, keeps underlayer temperature constant and kept for 40 minutes, complete deoxidation.
(5) the GaSb substrate for completing deoxidation grown buffer layer: is cooled to 540 DEG C.Open reflected high energy electron diffraction
Instrument (RHEED), adjustment incident current to 1.4A.When GaSb underlayer temperature stablize at 540 DEG C after the temperature growth with a thickness of
The GaSb buffer layer of 30nm stops substrate rotation later.
(6) determination of GaSb substrate surface structure temperature again: adjustment substrate angle make GaSb substrate surface × 3 again structure it is clear
As it can be seen that GaSb underlayer temperature is down to 450 DEG C, Cooling rate is adjusted later to 10 DEG C/min, continues to reduce underlayer temperature to 420
DEG C, so that GaSb substrate surface is occurred × 5 and structure and remain unchanged again, adjusts GaSb substrate Cooling rate to 5 DEG C/min, by substrate liter
Temperature to reappearing × 3 structures again, and write down GaSb substrate from × 5 again allosteric transformation be × 3 again structure when 435 DEG C of underlayer temperature, make
For the fiducial temperature T of epitaxial growthc。
(7) GaSb underlayer temperature is increased to Tc+ 110=545 DEG C, wait epitaxial growth.
(8) it edits and runs growth procedure, specific steps include:
1. growing the high temperature GaSb buffer layer of 200nm, GaSb underlayer temperature is Tc+ 110=545 DEG C, Ga furnace temperature is 1079/909
DEG C, Sb needle-valve value is that 242, As needle-valve value is 20.Ga, Sb shutter are opened, remaining shutter close；
2. setting GaSb underlayer temperature is Tc=435 DEG C, Sb needle-valve value is that 210, As needle-valve value is 20.Sb shutter is opened, remaining shutter
It closes；
3. keeping GaSb underlayer temperature constant, the AlSb layer of 30nm is grown, GaSb underlayer temperature is Tc=435 DEG C, Al furnace temperature is
1077/1127 DEG C, Sb needle-valve value is that 210, As needle-valve value is 20.Al, Sb shutter are opened, remaining shutter close；
4. keeping GaSb underlayer temperature constant, the AlInAsSb superlattice structure in 40 periods is grown, interface sequence is successively are as follows:
AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb, setting GaSb underlayer temperature are Tc=435 DEG C, In furnace temperature is 949/799
DEG C, Sb needle-valve value is that 210, As needle-valve value is 231.Al, In, As, Sb shutter are successively opened by interface sequence, remaining shutter close；
5. keeping GaSb underlayer temperature constant, the AlSb layer of 30nm, underlayer temperature T are grownc=435 DEG C, Al furnace temperature is
1077/1127 DEG C, Sb needle-valve value is that 210, As needle-valve value is 20.Al, Sb shutter are opened, remaining shutter close；
6. keeping GaSb underlayer temperature constant, growth thickness is the GaSb cap rock of 20nm.Setting GaSb underlayer temperature is Tc=435
DEG C, Ga furnace temperature is 1079/909 DEG C, and Sb needle-valve value is 210.Ga, Sb shutter are opened, remaining shutter close；
It protects 7. opening Sb atmosphere protection and closing Sb when underlayer temperature is down to 400 DEG C and continues to cool down.GaSb substrate is set
Temperature is Tc=200 DEG C, Sb needle-valve value is 210.Sb shutter is opened, remaining shutter close；Complete the editor of growth procedure；
8. running program.
(9) in (2) " As/In=6, Sb/Al=6 " are changed to " As/In=4, Sb/Al=5 ", " As/In=6, Sb/ respectively
Al=5 ", " As/In=8, Sb/Al=5 ", " As/In=6, Sb/Al=4 ", " As/In=6, Sb/Al=8 ", the growth temperature in (7)
It remains unchanged, grows five samples respectively, corresponding XRD spectrum is as shown in Figure 1, 2, from figure 1 it appears that " As/In
XRD spectrum corresponding to=6, Sb/Al=5 ", lattice mismatch are minimum.So best five or three ratio chosen is As/In=6；From Fig. 2
In as can be seen that " the corresponding XRD spectrum of As/In=6, Sb/Al=6 ", lattice mismatch have reached zero, thus chosen material growth
Best five or three ratio is As/In=6, Sb/Al=6.
(10) growth temperature in (8) is changed to Tc-15 DEG C, Tc+15 DEG C and Tc+30 DEG C respectively, in (2) " As/In=
6, Sb/Al=6 " remain unchanged, and grow four samples respectively, and corresponding AFM map is as shown in Figure 3.It can from Fig. 3
Out, when four temperature, only Tc temperature, RMS is minimum, this shows that the material surface pattern of this temperature growth has reached preferably, institute
Selecting this temperature with us is the optimum growth temp of AlInAsSb material.
(11) finally, we obtain the good AlInAsSb material of quality of materials.Itself XRD and AFM map is as shown in Figure 4.
So far, it has been combined attached drawing the present embodiment is described in detail, according to above description, those skilled in the art
Should have to the present invention and be apparent from.
Claims (10)
1. the optimization method of molecular beam epitaxial growth short-wave infrared detection materials A lInAsSb superlattices, which is characterized in that including
Following steps:
A, the source oven temperature degree of group iii elements Al, In and corresponding line value when measurement grows AlInAsSb material first, five races member
The line value of plain As, Sb and the fiducial temperature T of molecular beam epitaxial growthc, and define the line of group-v element and group iii elements
Value ratio is respectively Sb/Al and As/In；
B, Sb/Al value is set as fixed value A, and As/In value is variate-value x, prepared when by comparing different x values
The XRD spectrum of AlInAsSb material analyzes the optimum value x for determining As/Ini；Then, As/In value is set as optimum value xi, Sb/
Al value is variate-value y, and the XRD spectrum of prepared AlInAsSb material when by comparing different y values is analyzed and determines Sb/Al
Optimum value yi;
C, with TcFor benchmark temperature, growth temperature of the AlInAsSb superlattices on GaSb substrate is adjusted, is carried out with 15 °C for step-length
Variation carries out AFM test to AlInAsSb material sample obtained, and true according to the rms surface roughness that AFM is measured
Its fixed optimum growth temp.
2. optimization method according to claim 1, which is characterized in that step A the following steps are included:
A1, GaSb substrate is successively subjected to degasification in Sample Room and surge chamber；
A2, adjustment group iii elements source oven temperature degree, until its line value reaches line corresponding to the speed of growth needed for group iii elements
Value；According to Sb/Al value needed for the line value of group iii elements and growth material and As/In value, group-v element Sb is calculated
With line value required for As, needle-valve value corresponding thereto is further measured；
A3, the GaSb substrate Jing Guo degasification is sent into growth room, 620 °C are warming up under antimony atmosphere protection and are carried out in the temperature
Deoxidation；
A4, the GaSb substrate Jing Guo deoxidation is cooled to 540 °C, and in the temperature growth gallium antimonide buffer layer；
A5, to gallium antimonide buffer growth after, GaSb underlayer temperature is continued to cool down, observe GaSb substrate surface structure again
Variation, when GaSb substrate surface × 3 again allosteric transformation be × 5 structures and when remaining unchanged again, increase GaSb underlayer temperature until
GaSb substrate surface × 5 again structure be re-converted to × 3 structures again, which is set to the temperature of the allosteric transformation again i.e. base of GaSb substrate
Quasi- temperature Tc。
3. optimization method according to claim 2, which is characterized in that in step A5, observe the structure again of GaSb substrate surface
When variation, reflected high energy electron diffraction device is used.
4. optimization method according to claim 1, which is characterized in that editor's growth control program growth AlInAsSb is super brilliant
Grid material includes the following steps:
1. growing high temperature gallium antimonide buffer layer, setting GaSb underlayer temperature is Tc+110 °C, opens Ga, Sb shutter, remaining shutter closes
It closes；
2. GaSb underlayer temperature to be down to the growth temperature of material setting, AlSb barrier layer is grown, Al, Sb shutter are opened, remaining is fast
Door is closed；
3. keeping GaSb underlayer temperature constant, the AlInAsSb superlattice structure in 40 periods is grown, Material growth sequence is successively
Are as follows: AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb；
4. keeping GaSb underlayer temperature constant, AlSb barrier layer is grown, opens Al, Sb shutter, remaining shutter close；
5. keeping GaSb underlayer temperature constant, GaSb cap rock is grown, opens Ga, Sb shutter, remaining shutter close；
6. Sb shutter is opened, close Sb shutter when underlayer temperature is down to 370 DEG C under Sb atmosphere protection and continues to cool down,
Sb shutter is always on during this, until temperature be lower than 370 DEG C, complete the editor of growth procedure and operation.
5. optimization method according to claim 4, which is characterized in that the life used when growth AlInAsSb super crystal lattice material
Long rate is respectively as follows: InAs=0.4ML/s(atomic layer/second), AlSb=AlAs=0.4ML/s(atomic layer/second).
6. optimization method according to claim 1, which is characterized in that in step B, AlInAsSb super crystal lattice material sample
XRD spectrum is provided by high-resolution X-ray double-crystal diffractometer.
7. optimization method according to claim 1, which is characterized in that in step B, optimum value xiWith optimum value yiIt determined
Journey is as follows: XRD spectrum substrate peak and superlattices zero level satellites by comparing AlInAsSb super crystal lattice material, two peaks most connect
Value when close is optimum value.
8. optimization method according to claim 1, which is characterized in that in step B, fixed value A is selected from any between 1-20
Value.
9. optimization method according to claim 1, which is characterized in that in step B, the value model of variate-value x and variate-value y
Enclosing is 1-20.
10. optimization method according to claim 1, which is characterized in that in step C, the AFM of AlInAsSb superlattice samples
Map is provided by atomic force microscope.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110527975A (en) * | 2019-09-06 | 2019-12-03 | 新磊半导体科技（苏州）有限公司 | A kind of calibrating method of InGaAsP quaternary material molecular beam epitaxial growth |
| CN112160030A (en) * | 2020-09-25 | 2021-01-01 | 中国电子科技集团公司第十一研究所 | Molecular beam epitaxy system and temperature control method of molecular beam epitaxy surface |
| CN113358677A (en) * | 2021-06-06 | 2021-09-07 | 南京国科半导体有限公司 | Method for measuring growth speed of InAs layer grown on GaSb substrate |
| CN114457419A (en) * | 2022-01-17 | 2022-05-10 | 中国电子科技集团公司第十一研究所 | InAs/GaSb superlattice growth method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020096106A1 (en) * | 2001-01-19 | 2002-07-25 | Kub Francis J. | Electronic device with composite substrate |
| CN1888127A (en) * | 2006-07-21 | 2007-01-03 | 哈尔滨工业大学 | Molecular beam epitaxy process of growing GaAs-base InSb film |
| CN101106092A (en) * | 2007-04-13 | 2008-01-16 | 浙江大学 | Making method for IV-VI semiconductor single crystal film and the heterogeneous structure |
| CN102867886B (en) * | 2012-09-06 | 2014-11-26 | 中国电子科技集团公司第十一研究所 | Method and system for preparing detector chip by applying bicolor infrared material |
| CN108648987A (en) * | 2018-03-26 | 2018-10-12 | 中国科学院半导体研究所 | A kind of optimization method at molecular beam epitaxial growth LONG WAVE INFRARED superlattices interface |
-
2018
- 2018-12-04 CN CN201811470805.7A patent/CN109616403B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020096106A1 (en) * | 2001-01-19 | 2002-07-25 | Kub Francis J. | Electronic device with composite substrate |
| US6497763B2 (en) * | 2001-01-19 | 2002-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic device with composite substrate |
| CN1888127A (en) * | 2006-07-21 | 2007-01-03 | 哈尔滨工业大学 | Molecular beam epitaxy process of growing GaAs-base InSb film |
| CN100453690C (en) * | 2006-07-21 | 2009-01-21 | 哈尔滨工业大学 | Molecular beam epitaxy process of growing GaAs-base InSb film |
| CN101106092A (en) * | 2007-04-13 | 2008-01-16 | 浙江大学 | Making method for IV-VI semiconductor single crystal film and the heterogeneous structure |
| CN100468661C (en) * | 2007-04-13 | 2009-03-11 | 浙江大学 | Making method for IV-VI semiconductor single crystal film and the heterogeneous structure |
| CN102867886B (en) * | 2012-09-06 | 2014-11-26 | 中国电子科技集团公司第十一研究所 | Method and system for preparing detector chip by applying bicolor infrared material |
| CN108648987A (en) * | 2018-03-26 | 2018-10-12 | 中国科学院半导体研究所 | A kind of optimization method at molecular beam epitaxial growth LONG WAVE INFRARED superlattices interface |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110527975A (en) * | 2019-09-06 | 2019-12-03 | 新磊半导体科技（苏州）有限公司 | A kind of calibrating method of InGaAsP quaternary material molecular beam epitaxial growth |
| CN110527975B (en) * | 2019-09-06 | 2020-12-18 | 新磊半导体科技（苏州）有限公司 | Calibration method for molecular beam epitaxial growth of InGaAsP quaternary material |
| CN112160030A (en) * | 2020-09-25 | 2021-01-01 | 中国电子科技集团公司第十一研究所 | Molecular beam epitaxy system and temperature control method of molecular beam epitaxy surface |
| CN113358677A (en) * | 2021-06-06 | 2021-09-07 | 南京国科半导体有限公司 | Method for measuring growth speed of InAs layer grown on GaSb substrate |
| CN114457419A (en) * | 2022-01-17 | 2022-05-10 | 中国电子科技集团公司第十一研究所 | InAs/GaSb superlattice growth method |
| CN114457419B (en) * | 2022-01-17 | 2023-03-03 | 中国电子科技集团公司第十一研究所 | InAs/GaSb superlattice growth method |
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