CN109616403B - Method for molecular beam epitaxial growth of AlInAsSb superlattice material - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 67
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 8
- 230000003746 surface roughness Effects 0.000 claims abstract description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 30
- 229910017115 AlSb Inorganic materials 0.000 claims description 21
- 238000002441 X-ray diffraction Methods 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 238000007872 degassing Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000000089 atomic force micrograph Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000097 high energy electron diffraction Methods 0.000 claims description 2
- 238000004630 atomic force microscopy Methods 0.000 claims 1
- 238000005457 optimization Methods 0.000 abstract description 6
- 238000004458 analytical method Methods 0.000 abstract description 2
- 238000010183 spectrum analysis Methods 0.000 abstract 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
The invention discloses an optimization method for growing a short-wave infrared AlInAsSb superlattice by molecular beam epitaxy, which comprises the following steps: measuring the source furnace temperature and the corresponding beam current value of the III-group element in AlInAsSb, the beam current value corresponding to the V-group element and the reference temperature T of the molecular beam epitaxial growthcAnd the beam flow value ratios of the five-group elements and the three-group elements are defined As Sb/Al and As/In respectively; setting Sb/Al value As fixed value A and As/In value As variable value x, and determining the optimal value x of As/In by comparing Xrd spectrum analysis of different x valuesi(ii) a Similarly, the value of As/In is set to the optimum value xiTaking Sb/Al as variable value y, and determining the optimal value y of Sb/Al by comparing Xrd map analysis of different y valuesiAccording to the reference temperature TcThe growth temperature of the AlInAsSb superlattice on the GaSb substrate is adjusted by taking 15 ℃ as a step length, and the optimal growth temperature is determined according to the surface roughness of an AFM atlas. The AlInAsSb material with good material quality can be obtained by the optimization method, and the method is simple and efficient.
Description
Technical Field
The invention discloses an optimization method for growing a short wave infrared detection material AlInAsSb superlattice by utilizing a molecular beam epitaxy technology, belonging to the field of semiconductor materials.
Background
Short Wave Infrared (SWIR) detectors in the 1 to 3 micron band are now of great interest in civilian applications including secure communications, astronomical observationsGas analysis, geosciences, etc. A camera carrying SWIR imaging can obtain a higher resolution image than a conventional visible light camera. In addition, the waveband imaging can be carried out passively and actively. Therefore, the method has very important application value in the military and civil fields. To date, many material systems, such as mercury cadmium telluride HgCdTe (MCT) and indium gallium arsenic InxGa1-xAs, has solved many problems in this band. They respond to the short wavelength range by adjusting the composition of the material to cut off the wavelength. However, based on InxGa1-xThe As infrared detector has some limitations on the range of cutoff wavelengths, and when the cutoff wavelength exceeds 1.7 μm, the performance of the detector is rapidly degraded due to defects caused by lattice mismatch. An infrared detector based on HgCdTe can cover the range of 1-3 μm by changing the molar composition of Cd. However, the growth process of the infrared detector material is high in requirement, a complex device manufacturing process is also needed, and the large-area uniformity of the material is poor, so that the application of the device is greatly limited.
In contrast, based on AlxIn1-xAsySb1-yThe quaternary compound infrared detector (hereinafter referred to as AlInAsSb) is a very potential photoelectric device, because the values of x and y can be adjusted to match with InP, InAs, GaSb and other substrates. Changing the aluminum composition also adjusted the band gap from 0.25 eV (0% aluminum) to 1.18 eV (72% aluminum), which corresponds to a cutoff wavelength range of 5 to 1.05 μm.
The AlInAsSb material has many advantages, such as no toxicity, simple growth process, low manufacturing cost, flexible and adjustable bandwidth, and can effectively inhibit Auger recombination due to large electronic effective mass. The superlattice material is formed by alternatively growing InAs and AlSb, GR dark current, trap assistance and interband tunnel dark current can be obviously reduced, and the photoelectric property of the material can be improved. However, AlInAsSb is a quaternary alloy material, and the growth difficulty is higher than that of a ternary material, so the invention starts from the preparation of an optimized material and emphatically solves the growth problem of a high-quality material.
Disclosure of Invention
The invention aims to provide an optimization method for growing a short-wave infrared detection material AlInAsSb superlattice by a molecular beam epitaxy technology.
The technical scheme for realizing the invention is as follows: the optimization method for the molecular beam epitaxial growth of the AlInAsSb superlattice material comprises the following steps:
A. firstly, the source furnace temperature and the corresponding beam current value of III-group elements Al and In, the beam current value of V-group elements As and Sb and the reference temperature of molecular beam epitaxial growth are measured when the AlInAsSb material grows, and the ratio (V-III ratio) of the beam current values of the V-group elements and the III-group elements is defined As the Sb/Al ratio and the As/In ratio respectively.
B. Setting the value of Sb/Al ratio As a certain fixed value A (A is any fixed value between 1 and 20), setting the value of As/In ratio As a variable value x (x varies between 1 and 20), and analyzing and determining the optimal value x of As/In by comparing XRD patterns of AlInAsSb superlattice materials prepared at different x valuesiThen, the value of As/In is set to the optimum value xiThe value of Sb/Al is a variable value y, and the optimal value y of Sb/Al is analyzed and determined by comparing XRD patterns of AlInAsSb superlattice materials prepared at different y valuesi。
C. By TcAdjusting the growth temperature of the AlInAsSb superlattice on the GaSb substrate as a reference temperature, changing by taking 15 ℃ as a step length, carrying out AFM test on the obtained AlInAsSb sample, determining the optimal growth temperature of the AlInAsSb superlattice on the GaSb substrate according to the root mean square surface roughness measured by AFM, namely adjusting the growth temperature of the GaSb substrate by taking 15 ℃ as the step length according to the reference temperature, and determining the optimal growth temperature of the AlInAsSb superlattice on the GaSb substrate according to the root mean square surface roughness of an AFM atlas.
Further, step a comprises the steps of:
a1, degassing the gallium antimonide substrate in a sample chamber and a buffer chamber in sequence;
a2, adjusting tip/base temperature value of the III-family element source furnace (namely the temperature of the source furnace) until the beam value reaches the beam value corresponding to the growth speed required by the III-family element; calculating the beam flow values required by the five-group elements Sb and As according to the beam flow values of the three-group elements and the Sb/Al and As/In ratios required by the growth materials, and further measuring the corresponding needle valve values;
a3, sending the degassed GaSb substrate into a growth chamber, heating to 620 ℃ under the protection of antimony atmosphere, and deoxidizing at the temperature;
a4, cooling the deoxidized GaSb substrate to 540 ℃, and growing a gallium antimonide buffer layer at the temperature;
a5, after the growth of the gallium antimonide buffer layer is finished, continuously cooling the GaSb substrate, observing reconstruction change of the gallium antimonide surface, after × 3 reconstruction of the GaSb substrate surface is converted into × 5 reconstruction and is kept unchanged, raising the temperature of the GaSb substrate until × 5 reconstruction of the GaSb substrate surface is converted into × 3 reconstruction, determining the temperature as reconstruction conversion temperature of the GaSb substrate, and taking the reconstruction conversion temperature as reference temperature Tc。
Further, in step a5, a reflective high-energy electron diffraction device was used to observe the reconstruction change of the surface of gallium antimonide.
Further, a growth control program of the AlInAsSb superlattice material is edited on a computer, and the growth control program comprises the following steps:
firstly, growing a high-temperature gallium antimonide buffer layer, setting the temperature of a GaSb substrate to be Tc +110 ℃, opening Ga and Sb shutters, and closing the rest shutters;
reducing the temperature of the GaSb substrate to the growth temperature set by the AlInAsSb material, growing an AlSb barrier layer, opening Al and Sb shutters, and closing the rest shutters;
keeping the temperature of the GaSb substrate unchanged, and growing the AlInAsSb superlattice structure with 40 periods, wherein the growth sequence is as follows in sequence: AlSb, AlAs, AlSb, Sb, In, InAs, In and Sb;
keeping the temperature of the GaSb substrate unchanged, growing an AlSb barrier layer, opening Al and Sb shutters, and closing the rest shutters;
keeping the temperature of the GaSb substrate unchanged, growing a GaSb cover layer, opening Ga and Sb shutters, and closing the rest shutters;
sixthly, opening the Sb shutter, closing the Sb shutter when the temperature of the substrate is reduced to 370 ℃ under the protection of Sb atmosphere, and opening the Sb shutter during the temperature reduction till the temperature is lower than 370 ℃, so that the editing of the growth program is completed and the operation is carried out.
Further, the growth rates adopted when growing the AlInAsSb superlattice are respectively as follows: InAs =0.4ML/s (atomic layer/sec), AlSb = AlAs =0.4ML/s (atomic layer/sec).
Further, in the step B, the XRD pattern is given by a high-resolution X-ray double-crystal diffractometer.
Further, in step B, the optimum value xiAnd an optimum value yiBy comparing the XRD pattern substrate peak with the superlattice zero-order satellite peak, the value when the two peaks are closest is the optimal value.
Further, in step C, the AFM spectrum is given by an atomic force microscope.
Further, in the step C, the growth temperature of the GaSb substrate ranges from Tc ± 30 ℃.
Further, in the step C, comparing the AFM images of the materials with different growth temperatures, wherein the growth temperature of the material corresponding to the AFM image with the minimum root mean square surface roughness is the optimal growth temperature of the AlInAsSb material.
Compared with the prior art, the invention has the advantages that: the invention systematically provides an optimized growth method of the AlInAsSb material, the AlInAsSb material with good material quality can be obtained by the optimized growth method, and a foundation is laid for the next step of manufacturing the AlInAsSb infrared detector.
Drawings
FIG. 1 is an XRD pattern of AlInAsSb material prepared while varying the As/In value.
FIG. 2 is an XRD pattern of AlInAsSb material prepared while changing the Sb/Al value.
FIG. 3 is an AFM surface topography of AlInAsSb material grown at different temperatures.
Fig. 4 is an XRD and AFM spectra of AlInAsSb grown using optimized conditions.
Detailed Description
In the embodiment, an optimized growth method of a short-wave AlInAsSb superlattice material is provided. The structure adopted by the material optimized growth method is as follows from bottom to top in sequence: the device comprises a GaSb substrate, a GaSb buffer layer with the thickness of 200nm, an AlSb barrier layer with the thickness of 30nm, an AlInAsSb superlattice with the thickness of 40 periods, an AlSb barrier layer with the thickness of 30nm and a GaSb cover layer with the thickness of 20 nm. The upper and lower AlSb layers of the superlattice are used for limiting the movement of carriers so as to better perform PL spectrum testing. The method adopts an alloy technology to prepare the AlInAsSb superlattice material, and the shutter sequence sequentially comprises the following steps: AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb (the interface sequence is an optimized sequence). The optimization method comprises the following specific steps:
(1) pre-degassing the substrate by placing a 2-inch double-side polished GaSb substrate into an intro chamber until the vacuum degree is reduced to 1.6 × 10-6When the temperature is Torr, the temperature of the intro cavity is raised to 200 ℃ and kept for one hour, and the vacuum degree needs to be less than or equal to 1.6 × 10 in the temperature raising process-6After the degree of vacuum is reduced to 5.0 × 10-8Transferring the substrate degassed in the intro cavity to a degassing tray of a buffer cavity, heating to 420 ℃, and keeping for 1 hour until the vacuum degree is reduced to 5.0 × 10-8Below Torr, degassing of the buffer chamber is ended.
(2) Through two times of pre-degassing outside the growth chamber, one time of degassing in the growth chamber, the surface of the substrate has some defects, if the heterogeneous material is directly epitaxial at the moment, a large number of defects can be generated, so that a GaSb buffer layer with the thickness of 200nm needs to be epitaxially grown.
(3) Measuring the temperature and the beam current of the source furnace, wherein the growth rates of a GaSb buffer layer, AlSb and InAs used In the growth process are respectively 0.5ML/s, 0.4ML/s and 0.4ML/s (determined according to the data of the previous experiment), adjusting the temperature of the Ga, Al and In source furnace to ensure that the beam current values of Ga, Al and In are respectively 9.47 × 10-8Torr、1.80×10-7Torr and 3.84 × 10-7Torr, the corresponding Ga source furnace temperature is tip/base =1079/909 ℃, Al source furnace temperature is tip/base =1077/1127 ℃, In source furnace temperature is tip/base =949/799 ℃, Sb beam current required for growing the high-temperature GaSb buffer layer is determined by Sb/Ga =13.1, and Sb needle threshold is adjusted to enable the Sb beam current to reach 1.24 × 10-6The Torr meets the growth requirement of high-temperature GaSb, and the corresponding Sb needle threshold is 242. Wherein the As and Sb beam current values required for growing the AlInAsSb superlattice structure meet the following relations of As/In =6 and Sb/Al =6, and the As needle valve value and the Sb needle valve value are adjusted to ensure that the As beam current value and the Sb beam current value meet the following relationsThe flow values respectively reach 2.31 × 10-6Torr and 1.08 × 10-6Torr, the corresponding As pin threshold and Sb pin threshold are 231 and 210, respectively.
(4) Deoxidizing the substrate: the pre-degassed substrate was transferred to the substrate tray in the growth chamber, the substrate temperature was raised to 620 ℃ and the substrate tray was opened to rotate (10 rpm), when the substrate temperature reached 400 ℃, the Sb needle valve value was increased to 242, and the Sb door was opened. When the substrate temperature reached 620 ℃, the substrate temperature was kept constant and kept for 40 minutes, and the deoxidation was completed.
(5) Growing a buffer layer: and cooling the deoxidized GaSb substrate to 540 ℃. Turn on the Reflection High Energy Electron Diffractometer (RHEED) and adjust the incident current to 1.4A. After the temperature of the GaSb substrate was stabilized at 540 ℃, a GaSb buffer layer having a thickness of 30nm was grown at that temperature, and then the substrate rotation was stopped.
(6) Determining the reconstruction temperature of the GaSb substrate surface, namely adjusting the substrate angle to enable × 3 reconstruction of the GaSb substrate surface to be clearly visible, reducing the temperature of the GaSb substrate to 450 ℃, then adjusting the temperature change rate to 10 ℃/min, continuously reducing the substrate temperature to 420 ℃, enabling × 5 reconstruction to occur on the GaSb substrate surface and keeping unchanged, adjusting the temperature change rate of the GaSb substrate to 5 ℃/min, heating the substrate to × 3 reconstruction again, recording the substrate temperature 435 ℃ when the GaSb substrate is transformed from × 5 reconstruction to × 3 reconstruction, and taking the substrate temperature 435 ℃ as the reference temperature T of epitaxial growthc。
(7) Raising the temperature of the GaSb substrate to Tc+110=545 ℃ waiting for epitaxial growth.
(8) Editing and running a growth program, and specifically comprising the following steps:
① growing 200nm high temperature GaSb buffer layer with GaSb substrate temperature Tc+110=545 ℃, Ga furnace temperature 1079/909 ℃, Sb pin threshold 242, As pin threshold 20. Opening the Ga shutter and the Sb shutter, and closing the other shutters;
② setting the GaSb substrate temperature to Tc=435 ℃, Sb pin threshold is 210, and As pin threshold is 20. Opening the Sb shutter, and closing the other shutters;
③ maintaining the temperature of GaSb substrate unchanged, growing AlSb layer of 30nm, the temperature of GaSb substrate being Tc=435 ℃ Al furnaceThe temperature was 1077/1127 ℃, the Sb needle threshold was 210, and the As needle threshold was 20. Opening the shutters Al and Sb, and closing the other shutters;
④ maintaining the temperature of GaSb substrate unchanged, growing AlInAsSb superlattice structure of 40 periods, the order of interfaces being AlSb, AlAs, AlSb, Sb, In, InAs, In and Sb, setting the temperature of GaSb substrate as Tc=435 ℃, the In furnace temperature is 949/799 ℃, the Sb pin threshold is 210, and the As pin threshold is 231. Opening Al shutters, In shutters, As shutters and Sb shutters In sequence according to the interface sequence, and closing the rest shutters;
⑤ maintaining the temperature of GaSb substrate unchanged, growing 30nm AlSb layer at the substrate temperature of Tc=435 ℃, the Al furnace temperature was 1077/1127 ℃, the Sb pin threshold was 210, and the As pin threshold was 20. Opening the shutters Al and Sb, and closing the other shutters;
⑥ keeping the temperature of the GaSb substrate unchanged, growing a GaSb cover layer with the thickness of 20nm, setting the temperature of the GaSb substrate as Tc=435 ℃, Ga furnace temperature 1079/909 ℃, Sb needle threshold 210. Opening the Ga shutter and the Sb shutter, and closing the other shutters;
⑦ opening Sb atmosphere protection until the substrate temperature drops to 400 deg.C, closing Sb protection and continuing coolingc=200 ℃, Sb needle threshold is 210. Opening the Sb shutter, and closing the other shutters; finishing the editing of the growth program;
and operating the program.
(9) The "As/In =6, Sb/Al = 6" In (2) was changed to "As/In =4, Sb/Al = 5", "As/In =6, Sb/Al = 5", "As/In =8, Sb/Al = 5", "As/In =6, Sb/Al = 4", "As/In =6, Sb/Al = 8", and (7) while maintaining the same growth temperature, five samples were grown, respectively, and the XRD patterns thereof are As shown In fig. 1 and 2, and As shown In fig. 1, the XRD patterns corresponding to "As/In =6, Sb/Al = 5" are the smallest lattice mismatch. Therefore, the optimal five-three ratio is selected to be As/In = 6; as can be seen from fig. 2, the XRD patterns corresponding to "As/In =6 and Sb/Al = 6" have a lattice mismatch of zero, so that the optimal five-three ratio for the growth of the material is As/In =6 and Sb/Al = 6.
(10) Four samples were grown with the growth temperature In (8) changed to Tc-15 ℃, Tc +15 ℃ and Tc +30 ℃ respectively, and "As/In =6, Sb/Al = 6" In (2) kept unchanged, and the corresponding AFM spectra are shown In fig. three. As can be seen from fig. 3, the RMS is the smallest at four temperatures, only the Tc temperature, which indicates that the surface morphology of the material grown at this temperature is the best, so we choose this temperature to be the optimal growth temperature for the AlInAsSb material.
(11) Finally, the AlInAsSb material with good material quality is obtained. The XRD and AFM patterns are shown in FIG. 4.
So far, the present embodiment has been described in detail with reference to the accompanying drawings, and the present invention should be clearly understood by those skilled in the art from the above description.
Claims (12)
1. The method for molecular beam epitaxy growth of AlInAsSb superlattice short-wave infrared detection material is characterized by comprising the following steps:
A. firstly, the source furnace temperature and the corresponding beam current value of III-group elements Al and In, the beam current value of V-group elements As and Sb and the reference temperature T of molecular beam epitaxial growth are measured when the AlInAsSb material growscAnd the beam flow value ratios of the five-group elements and the three-group elements are defined As Sb/Al and As/In respectively;
B. setting Sb/Al value As fixed value A and As/In value As variable value x, comparing XRD patterns of AlInAsSb material prepared at different x values, analyzing and determining optimum value x of As/Ini(ii) a Then, the value of As/In is set to the optimum value xiThe Sb/Al value is taken as a variable value y, and the optimal value y of the Sb/Al is analyzed and determined by comparing XRD (X-ray diffraction) patterns of the AlInAsSb material prepared at different y valuesi;
C. By TcAdjusting the growth temperature of the AlInAsSb superlattice on the GaSb substrate as a reference temperature, changing by taking 15 ℃ as a step length, carrying out AFM test on the obtained AlInAsSb material sample, and determining the optimal growth temperature according to the root-mean-square surface roughness measured by AFM.
2. The method of claim 1, wherein step a comprises the steps of:
a1, degassing the GaSb substrate in a sample chamber and a buffer chamber in sequence;
a2, adjusting the temperature of the III-family element source furnace until the beam current value reaches the beam current value corresponding to the growth speed required by the III-family element; calculating the beam flow values required by the five-family elements Sb and As according to the beam flow values of the three-family elements and Sb/Al values and As/In values required by the growth materials, and further measuring the corresponding needle valve values;
a3, sending the degassed GaSb substrate into a growth chamber, heating to 620 ℃ under the protection of antimony atmosphere, and deoxidizing at the temperature;
a4, cooling the deoxidized GaSb substrate to 540 ℃, and growing a gallium antimonide buffer layer at the temperature;
a5, after the growth of the gallium antimonide buffer layer is finished, continuously cooling the temperature of the GaSb substrate, observing reconstruction change of the surface of the GaSb substrate, when × 3 reconstruction of the surface of the GaSb substrate is converted into × 5 reconstruction and is kept unchanged, raising the temperature of the GaSb substrate until × 5 reconstruction of the surface of the GaSb substrate is converted into × 3 reconstruction, and determining the temperature as reconstruction conversion temperature of the GaSb substrate, namely reference temperature Tc。
3. The method of claim 2, wherein step a5, when observing the reconstruction change of the GaSb substrate surface, uses a reflective high-energy electron diffraction device.
4. The method of claim 1, wherein the editing the growth control program to grow the AlInAsSb superlattice material comprises the steps of:
firstly, growing a high-temperature gallium antimonide buffer layer, setting the temperature of a GaSb substrate to be Tc +110 ℃, opening Ga and Sb shutters, and closing the rest shutters;
reducing the temperature of the GaSb substrate to the growth temperature set by the material, growing an AlSb barrier layer, opening Al and Sb shutters, and closing the rest shutters;
keeping the temperature of the GaSb substrate unchanged, and growing an AlInAsSb superlattice structure with 40 periods, wherein the growth sequence of the material is as follows: AlSb, AlAs, AlSb, Sb, In, InAs, In and Sb;
keeping the temperature of the GaSb substrate unchanged, growing an AlSb barrier layer, opening Al and Sb shutters, and closing the rest shutters;
keeping the temperature of the GaSb substrate unchanged, growing a GaSb cover layer, opening Ga and Sb shutters, and closing the rest shutters;
sixthly, opening the Sb shutter, closing the Sb shutter when the temperature of the substrate is reduced to 370 ℃ under the protection of Sb atmosphere, continuously reducing the temperature, and opening the Sb shutter until the temperature is lower than 370 ℃ to finish editing and running of the growth program.
5. The method of claim 4, wherein the growth rates used in growing the AlInAsSb superlattice material are respectively: InAs =0.4 atomic layers/sec, AlSb = AlAs =0.4 atomic layers/sec.
6. The method of claim 1, wherein in step B, the XRD pattern of the AlInAsSb superlattice material sample is given by a high resolution X-ray double crystal diffractometer.
7. The method of claim 1, wherein in step B, the optimal value x isiAnd an optimum value yiThe determination process is as follows: by comparing the XRD pattern substrate peak and the superlattice zero-order satellite peak of the AlInAsSb superlattice material, the value of the two peaks which are closest is the optimal value.
8. The method according to claim 1, wherein in step B, the fixed value a is selected from any value between 1 and 20.
9. The method of claim 1, wherein in step B, the variable value x and the variable value y both range from 1 to 20.
10. The method of claim 1, wherein in step C, the AFM profile of the AlInAsSb superlattice sample is given by atomic force microscopy.
11. The method of claim 1, wherein in step C, the growth temperature of the GaSb substrate is in the range of Tc ± 30 ℃.
12. The method of claim 1, wherein in step C, the optimal growth temperature for the AlInAsSb superlattice material is the temperature corresponding to the lowest root mean square surface roughness in the AFM image of the AlInAsSb superlattice material.
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