CN1885438A - 微尖端线列器件 - Google Patents
微尖端线列器件 Download PDFInfo
- Publication number
- CN1885438A CN1885438A CNA2005100119878A CN200510011987A CN1885438A CN 1885438 A CN1885438 A CN 1885438A CN A2005100119878 A CNA2005100119878 A CN A2005100119878A CN 200510011987 A CN200510011987 A CN 200510011987A CN 1885438 A CN1885438 A CN 1885438A
- Authority
- CN
- China
- Prior art keywords
- tip
- little
- micro
- semi
- girder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000009647 facial growth Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 3
- YOPBIWQURDWPIS-UHFFFAOYSA-N S(=O)(=O)(O)[Ni]C1=CC=CC=C1 Chemical compound S(=O)(=O)(O)[Ni]C1=CC=CC=C1 YOPBIWQURDWPIS-UHFFFAOYSA-N 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000003860 storage Methods 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
- 238000004621 scanning probe microscopy Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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- Cold Cathode And The Manufacture (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2005100119878A CN1885438B (zh) | 2005-06-23 | 2005-06-23 | 微尖端线列器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2005100119878A CN1885438B (zh) | 2005-06-23 | 2005-06-23 | 微尖端线列器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1885438A true CN1885438A (zh) | 2006-12-27 |
CN1885438B CN1885438B (zh) | 2010-11-24 |
Family
ID=37583545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100119878A Expired - Fee Related CN1885438B (zh) | 2005-06-23 | 2005-06-23 | 微尖端线列器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1885438B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101200279B (zh) * | 2007-12-11 | 2010-11-10 | 山东大学 | 一种高灵敏度的镍/硅复合微悬臂梁及其制备方法 |
CN101430938B (zh) * | 2007-11-07 | 2011-07-20 | 中国科学院微电子研究所 | 一种微尖端阵列器件及其制作方法 |
CN102642805A (zh) * | 2012-04-09 | 2012-08-22 | 北京大学 | 一种制备碳化硅微纳米针尖的方法 |
CN111044764A (zh) * | 2018-10-12 | 2020-04-21 | 旺矽科技股份有限公司 | 具有微机电探针的探针模块及其制造方法 |
TWI759594B (zh) * | 2018-10-12 | 2022-04-01 | 旺矽科技股份有限公司 | 具有微機電探針之探針模組及其製造方法 |
-
2005
- 2005-06-23 CN CN2005100119878A patent/CN1885438B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101430938B (zh) * | 2007-11-07 | 2011-07-20 | 中国科学院微电子研究所 | 一种微尖端阵列器件及其制作方法 |
CN101200279B (zh) * | 2007-12-11 | 2010-11-10 | 山东大学 | 一种高灵敏度的镍/硅复合微悬臂梁及其制备方法 |
CN102642805A (zh) * | 2012-04-09 | 2012-08-22 | 北京大学 | 一种制备碳化硅微纳米针尖的方法 |
CN102642805B (zh) * | 2012-04-09 | 2015-01-07 | 北京大学 | 一种制备碳化硅微纳米针尖的方法 |
CN111044764A (zh) * | 2018-10-12 | 2020-04-21 | 旺矽科技股份有限公司 | 具有微机电探针的探针模块及其制造方法 |
TWI759594B (zh) * | 2018-10-12 | 2022-04-01 | 旺矽科技股份有限公司 | 具有微機電探針之探針模組及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1885438B (zh) | 2010-11-24 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130422 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20180623 |