CN1879188B - Method and apparatus for rapid sample preparation in a focused ion beam microscope - Google Patents
Method and apparatus for rapid sample preparation in a focused ion beam microscope Download PDFInfo
- Publication number
- CN1879188B CN1879188B CN2004800330627A CN200480033062A CN1879188B CN 1879188 B CN1879188 B CN 1879188B CN 2004800330627 A CN2004800330627 A CN 2004800330627A CN 200480033062 A CN200480033062 A CN 200480033062A CN 1879188 B CN1879188 B CN 1879188B
- Authority
- CN
- China
- Prior art keywords
- sample
- specimen holder
- tem
- probe tip
- sample base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A coupon for preparing a TEM sample holder comprises a sheet of material that includes a TEM sample holder form. There is at least one section of the sheet connecting the TEM sample holder form to other portions of the sheet. A TEM sample holder is formed by cutting the TEM sample holder form from the coupon in a press. The cutting joins the tip point of a nano-manipulator probe tip with the formed TEM sample holder. The tip point of the probe has a sample attached for inspection in a TEM.
Description
Priority request
The application requires the U.S. Provisional Patent Application No.60/19 of submission on November 11st, 2003,046 priority.
Technical field
The present invention relates to the microscopical use of focused ion beam (FIB), it is used to prepare sample, for carry out subsequent analysis in transmission electron microscope (TEM), also relates to the device of being convenient to carry out these activities.
Background technology
In the device area and interconnect stack of current integrated circuit (IC)-components, structurized artifact, or even some structured layer may diminish to and can not carry out reliable Detection with auxiliary electron image or the FIB in the scanning electron microscopy (SEM), and this microscope can provide the surface that is about 3nm image resolution ratio.By comparison, TEM check can provide meticulousr image resolution ratio (＜0.1nm), but the sample that need be installed on the 3mm diameter grid dish has the part that can see through electronics (electron transparent) (＜100nm thickness).
Fa Zhan technology can be used to cut out or remove sample and checked being used for afterwards, this inspection seldom need or need in FIB, not be prepared before carry out the preliminary preparation mechanical of initial semiconductor dies sample.These sampling techniques are included in " offing normal " method that the outdoor face of FIB carries out, and " original position " method of carrying out in FIB.
This in-situ sampling technology is that a series of FIB grind and sample moves step, is used to produce the specifically sample relevant with the position, is used for carrying out subsequently observation in TEM or other analytical instrument.In position in the sampling process, the material sample (normally wedge shape) that comprises area-of-interest is at first separated from piece sample such as semiconductor wafer or mould fully by the ion beam process of lapping among the FIB.This sample is generally 10 * 5 * 5 μ m sizes.Use inside to receive the executor removal of sample of taking a sample that combines with Assisted by Ion Beam chemical vapor deposition (CVD) technology then, this CVD technology can obtain with the FIB instrument.The suitable effector system of receiving is by Dallas, the Omniprobe Inc. of Texas, the OmniprobeAutoProbe 200 of manufacturing.The material that is deposited in CVD technology is generally metal or oxide.
Then the TEM specimen holder is positioned in the visual field of FIB, and makes the sampling sample drop to the edge of specimen holder with receiving executor.With the CVD metal deposition amount in the FIB vacuum chamber sample is fixed on the TEM specimen holder then.In case sample is connected on this TEM specimen holder, probe tip just grinds and sample separation by ion.The part that relates to the operation that comprises the TEM specimen holder in this method is called as " specimen holder connection " step.Can use traditional FIB grinding steps that sample is ground then,, be used to carry out TEM check or other analyses to prepare out a thin zone.Can be about the detailed introduction of in-situ sampling method in U.S. Patent No. 6,420,722 and 6,570, find in 170 the specification.The content of these patent specifications is incorporated herein by reference, but they should not be considered to constitute with respect to prior art of the present invention owing to mentioning in this background parts.
The in-situ sampling technology is widely used, because this method allows people to utilize the unique ability of FIB, and these abilities is expanded to structure in the device of future generation and defective are tested.Because new FIB instrument can obtain the little ion beam spot size (spatial resolution so for example＜10nm) present FIB sample technology of preparing can offer the best in the place that position feature is had demand.
The variation of this in-situ sampling method relates to " grinding back surface " of sampling sample.This variation proposes according to " shower curtain (shower curtain) " this problem of effect, wherein, can produce uneven face behind the final thinning process of TEM preparation on the sampling sample at the non-homogeneous high density material on the integrated circuit surface.These uneven masks have the vertical ridge parallel with ion beam direction, and this is because near the sample top closeer material has slower ion grinding rate, and herein, the top is restricted to the edge of close ion beam source.This heterosphere is quite general in integrated circuit, for example, and copper or aluminium interconnection wiring and tungsten contacts.Plane surface in for the zone of TEM check attenuate on the sampling sample is very important for the TEM technology, for example electronic holography art.Grinding back surface is included in before the final thinning process sample is inverted, thus among the active layer of integrated circuit or near high density material can not grind the result to ion again and not exert an influence.
The in-situ sampling process can be reduced to three continuous steps.The first step is to use focused ion beam to grind sample separation and sample is taken out from its raceway groove.Second step was " specimen holder connection " step, and in this step, sample is being moved on the probe tip on the TEM specimen holder.Be connected to then and (use the metal deposition of ion beam induced usually) on the TEM specimen holder and separate with probe tip then.The 3rd step also was that final step is to use focused ion beam to grind the thin part that sample attenuate one-tenth can be seen through electronics.
At the most important part flower of finishing total time used in the process of TEM sample with in-situ sampling on the specimen holder Connection Step.Used relative time amount depends on sampling sample and the required time quantum (ion beam grinding rate) of original block sample mechanical separation, still can change between the 30%-60% of total time of TEM sample preparation.If remove the specimen holder Connection Step, then can produce some crucial incomes and the benefit relevant with resource, carry sample and the TEM sample is connected to step on the TEM specimen holder because removed.
For example, when not having the specimen holder Connection Step, semiconductor wafer can turn back in the technological process of the tight back of sampling.Attenuate to sample can carry out in an off-line FIB subsequently.This has reduced the load on crucial online (clean room) FIB, the process control of this feasible easier enforcement sampling, and reduced the required professional standards of process engineering personnel of operating online FIB.
In order to remove the specimen holder Connection Step, the probe tip that is connected with sample can directly link to each other with the material that will form the TEM specimen holder by suitable method, this suitable method can keep taking a sample being connected between sample and the probe tip, and prevents that probe tip and sample from separating with specimen holder in storage or the process checked in TEM.Assembly should be not and the operation interference of TEM or other analytical instrument that will use, and should preserve finely in the internal environment of TEM or other analytical instrument that will use.These suitable methods include but not limited to, make specimen holder material or probe tip material or the two mechanical deformation; The electricity of probe tip and TEM specimen holder material or thermal (for example, electric welding); With suitable glue or binding agent with probe tip material combination therewith; With CVD or evaporating materials probe tip is combined with TEM specimen holder material; Or other suitable means.This probe tip that will be connected with sample and TEM specimen holder carry out direct-connected method can within the vacuum chamber of FIB or other analytical instrument or outside carry out.
Summary of the invention
The preferred embodiments of the present invention comprise the sample base that is used to prepare the TEM specimen holder.This sample base comprises a sheet material, is preferably copper or molybdenum, and its surface can be flat or have corrugated structure.This sheet material comprises TEM specimen holder template, and this sheet material has at least a part this TEM specimen holder template to be connected to other parts of this sheet material.
In a further advantageous embodiment, TEM specimen holder template comprises a sheet material with C shape hole.Described C shape hole limits the periphery of a ring, and the opening in C shape hole limits the material piston ring land.This piston ring land is connected to ring on this sheet material, and has a passage to pass this sheet material, and it is connected to C shape hole at the edge of sheet material.
This TEM specimen holder comprises a ring, and described ring has circumferential clearance; Described circumferential clearance forms by TEM specimen holder template being pressed in two moulds centres and cutting out circumferential clearance from TEM specimen holder template.This TEM specimen holder can further comprise the one or more probe tips that are embedded in this ring, and wherein each probe tip further comprises a continuous sample.Can by to ring and and one or more tips exert pressure and probe tip be embedded in the ring, flow thereby make, or they can use binding agent or receive on the TEM specimen holder by electricity or thermal weld technical battery around the ring material of this needle point (shank).
In a further advantageous embodiment, this TEM specimen holder comprises rectangle or other any geometries, and it can be used for maintaining one or more probe tips, and each probe tip comprises a continuous sample.
Also provide a kind of preparation to be used for the method for the sample checked at TEM, may further comprise the steps: the tip that sample is connected to probe; Probe tip is joined on the TEM specimen holder; And form the TEM specimen holder by probe tip and TEM sample base.
The preferred embodiments of the present invention also comprise a kind of press, be used for cutting out the TEM specimen holder from TEM sample base, and the probe tip that will be connected with sample join on this TEM specimen holder, and described press comprises: outer mold; Be positioned at the inner mold of outer mold; The profiling bar relative with inside and outside mould; The drift of cutting with the profiling bar coaxial arrangement; With the following pressing spring of profiling bar towards the inner mold biasing; One in response to the trigger that contact or other mechanism of profiling bar with internal mold, and the actuator in response to this trigger, is used for inwardly, outer mold drives and cut drift.This press can be positioned within the vacuum chamber of FIB or other analytical instrument or outside.
Description of drawings
Fig. 1 is the plane graph of the TEM sample base of the preferred embodiment of the present invention, and wherein, specimen holder is an annular, and will be with a probe tip.
Fig. 2 is the plane graph of the TEM sample base of Fig. 1, shows the probe tip of crossing this sample base location before embedding and cutting.
Fig. 3 is the plane graph of the TEM sample base of optional embodiment, and wherein, specimen holder is an annular, and will be with four probe tip.
Fig. 4 is the plane graph of the sub-assembly of the TEM specimen holder that forms of the TEM sample base by Fig. 1 and probe tip, has the ring opening, allows end face to the sampling sample to carry out the FIB ion and grinds.
Fig. 5 is the TEM specimen holder that forms of the TEM sample base by Fig. 2 and the plane graph of four probe tip sub-assemblies, has the ring opening, allows end face to the sampling sample to carry out the FIB ion and grinds.
Fig. 6 is the cutaway view that is embedded into the probe tip in the TEM sample base.
Fig. 7 is the cutaway view of the probe tip that links to each other with TEM corrugation sample base by electricity or thermal.
Fig. 8 is the cutaway view of the probe tip that uses binding agent and link to each other with the TEM specimen holder.
Fig. 9 is the cutaway view of the probe tip that links to each other with the TEM specimen holder with CVD or evaporating materials.
Figure 10 is the press and the partial sectional view of cutting drift of preferred embodiment.
Figure 11 is the press and the local amplification view of cutting drift of Figure 10.
Figure 12 is the perspective view of cutting drift and inside and outside mould of Figure 10.
Figure 13 shows and is combined with a sample base and a probe tip for the perspective view of cutting drift of Figure 10.
Figure 14 is probe tip, be positioned at the terminal profiling bar of preferred embodiment of probe tip top and the cross-sectional view of TEM specimen holder, and wherein, probe tip is embedded in the TEM specimen holder.
Figure 15 is the plane graph of the sub-assembly of TEM specimen holder shown in Figure 4 and probe tip, wherein has the circumferential clearance that is used for grinding back surface in the specimen holder ring.
Figure 16 is the plane graph of the sub-assembly of TEM specimen holder shown in Figure 5 and four probe tips, wherein, has the ring opening that is used to carry out grinding back surface.
Figure 17 is the cross-sectional view of corrugation TEM sample base.
Figure 18 is the cross-sectional view that is embedded in the probe tip in the corrugation sample base.
Figure 19 is the plane graph of the TEM sample base of preferred embodiment, and wherein, specimen holder is a rectangle, and will have permission the sample end face is carried out the opening that FIB grinds with four probe tip.
Figure 20 is the plane graph of the TEM sample base of preferred embodiment, and wherein, specimen holder is a rectangle, and will have permission the opening that back side FIB ion grinds is carried out in the bottom surface of sampling sample with four probe tip.
Embodiment
The preferred embodiments of the present invention comprise the method and apparatus that the probe tip that will be connected with sample links to each other with the TEM specimen holder, and it has replaced the specimen holder Connection Step in the conventional method.In the preferred embodiment, this mechanical process is carried out in vacuum chamber outside, but it also can carry out in that FIB is indoor.In the preferred embodiment, the first step of in-situ sampling process (separation process of sample) is finished in FIB, and the probe tip that will be connected with sample is then removed from the FIB chamber.This is removed process and can realize by many means, include but not limited to, pass the sample gate of the FIB that is provided with door and remove probe and connect sample, pass the vacuum pressure transfer chamber of receiving on the manipulator device and move described probe tip and institute connects sample, perhaps in the box in a vacuum transition cabin of passing the FIB chamber mobile described probe tip and connect sample.Only listed first kind of means do not need the FIB vacuum chamber to lead to atmosphere, and it can make reduce circulation timei, makes equipment have long-term reliability.
The sample base
In a preferred embodiment, receiving probe tip 160 mechanical molding by a combination of executor probe 150 links to each other with TEM sample base 100 with cutting operation.As shown in Figure 1, this TEM sample base 100 is about sheet materials that have same thickness with final sample frame 170.This TEM sample base 100 comprises the shape (the pre-template of TEM) of final sample frame 170, but this pre-template is not also separated by complete mechanical.Can in sheet material, produce most of net shapes of common 3mmTEM specimen holder 170 in advance, as consumable sample base 100.This pre-template still links to each other with sample base 100 by other parts of fin, piston ring land or specimen holder material 120.This pre-template has ring 180, and it will become the part of final TEM specimen holder 170.Therefore this ring 180 is limited by the C shape hole 135 in the sample base 100.The opening in C shape hole 135 is the piston ring lands 120 that connect usefulness.Also can use other close-shaped, for example rectangle.
The specimen holder material is soft copper preferably, but also can be molybdenum, aluminium, gold, silver, nickel or beryllium, as long as it is suitable for the application scenario.In the mechanical step of separation process, sample base 100 makes specimen holder template 170 orientations and holds it in the appropriate location, and is as described below.Fig. 2 show one cross that sample base 100 places receive executor probe tip 150.This probe 150 has probe tip 160, and it maintains sample 140, is used for analyzing.Usually, probe tip 160 is meticulous tungsten pins.
All the other fins of sample base material, piston ring land 120 are connected to partially-formed TEM specimen holder 170 on the sample base 100, and are cut in the mechanical molding of described combination and cutting operation process, and be as described below.Described TEM specimen holder 170 preferably forms the shape of ring 180, its circumferential clearance 190 make afterwards can to the sample in the plane of TEM specimen holder 170 140 or end face or bottom surface carry out the FIB ion and grind, thereby the plane almost parallel of generation and TEM specimen holder 170 can be through the thin part of electronics.Also can use permission in the ring 180 of the TEM specimen holder 170 that forms, to have other shapes of circumferential clearance 190.For example Figure 19 and 20 shows the TEM specimen holder 170 with two gaps 190, wherein, TEM specimen holder 170 be shaped as rectangle.
Fig. 4,5 and 19 shows TEM specimen holder 170, and wherein, probe tip 160 is mounted for that sample 140 is carried out the top side ion and grinds.Figure 16,20 shows TEM specimen holder 170, and wherein, probe tip 160 is mounted for sample 140 is carried out grinding back surface.
Form the method for TEM specimen holder
The probe tip 160 that is connected with sample 140 can engage with the material that will form TEM specimen holder 170, thereby keep the connection between sample 140 and the probe tip 160, and prevent that probe tip 160 from separating from TEM specimen holder 170 in the process of carrying, storing or checking with sample 140 in TEM.This assembly should be not and the normal running interference of TEM or other analytical instrument that will use, and should preserve finely in the internal environment of TEM or other analytical instrument that will use.
Fig. 6-9 and 18 shows and joins probe tip 160 on the TEM sample base 100 method.Fig. 6 is the material of sample base 100 or the partial view of probe tip 160 or the mechanical deformation of the two.Fig. 7 shows probe tip 160 and for example welds with the electricity or the thermal 320 of sample base 100.Fig. 7 also shows the corrugation 175 in the TEM specimen holder material; The diameter of corrugation Duan Yueyu probe tip 160 is identical in this case.Fig. 8 shows the process that probe tip 160 is attached to TEM specimen holder 170 materials with suitable glue or binding agent 330.Fig. 9 shows the process that probe tip 160 is attached to TEM specimen holder 170 materials with CVD or evaporating materials 340.
In case after having TEM specimen holder 170 generations of the one or more probe tips 160 that are connected with sample 140, it just can turn back to FIB and be used for final attenuate operating process, in this process, the part of the expectation of one or more sampling samples 140 is thinned to make it to see through electronics (being generally 50-250nm).This final thinning process can carry out in off-line FIB, so that the maximum production of online FIB and utilization are effectively specialty or special-purpose off-line FIB lab resources, these off-lines FIB laboratory can be positioned at the clean room outside.But, being positioned at FIB if be used for sample is connected to the device of TEM specimen holder, then final attenuate operation can be carried out immediately.
In an optional method, final attenuate step can be sampling procedure after and the probe tip 160 that is connected with sample 140 remove from FIB be used for FIB outside the TEM specimen holder carry out at FIB before being connected.In this method, do not need that the TEM specimen holder 170 that is connected with sample 140 that machinery forms is turned back to FIB and be used for final thinning process.But final thinning process need be spent the extra time in initial FIB.In this method, the probe tip 160 that is connected with sample 140 is moved to the appropriate location among the FIB, and carries out final attenuate step with the ion beam among the FIB then.Then, the probe tip 160 that is connected with sample 140 is removed from FIB, and uses foregoing mechanical molding to link to each other with TEM specimen holder 170 with the cutting step.Recommend but and do not require and make probe tip 160 mechanically stables so that probe tip 160 is reduced to acceptable level with respect to any vibration of FIB chamber, perhaps reduce any mechanical drift of probe tip 160 with respect to the FIB chamber.Can by make among probe tip 160 and the FIB between the moderately stable surface or among sample 140 and the FIB suitably between surface or the object Mechanical Contact make probe tip 160 mechanically stables that are connected with sample 140.The for example edge or the corner of the mechanical structure that links to each other with the FIB platform, and probe tip 160 can carry out Mechanical Contact.Perhaps, the feather edge of sample 140 carries out Mechanical Contact with the surface of sample stage or any stable mechanical object (for example wafer surface) that links to each other with sample stage.Should stablize object can be rigidity or can be plasticity or strain, accepting the shape of probe tip 160 or sampling sample 140, and any relative mechanical oscillation in the further buffered probe needle point 160.
In another optional method, final attenuate step can be after sampling procedure and was carried out in FIB before the probe tip 160 that is connected with sample 140 joins on the TEM specimen holder in the FIB vacuum chamber.In this method, the probe tip 160 that is connected with sampling sample 140 moves to appropriate location among the FIB, and carries out final attenuate step with the ion beam among the FIB then.Then, the probe tip 160 that has a sample 140 that attenuate crosses can use foregoing mechanical molding or working angles to be connected on the TEM specimen holder 170 in the FIB vacuum chamber.In this method, be used for the device that sample is connected on the TEM specimen holder is positioned at the FIB vacuum chamber.Therefore, in-situ sampling, the probe tip that is connected with sample and TEM specimen holder be connected and final attenuate operation can be carried out in the FIB vacuum chamber as a plurality of steps in the technology.
Specimen holder forms device
Fig. 1 and 2 shows aforesaid TEM sample base 100.The piston ring land 120 that the specimen holder part 170 of sample base 100 is linked to each other with the remainder of sample base 100 will be cut in cutting or shaping operation process, to form TEM specimen holder 170.The thickness of sample base 100 by probe tip 160 is embedded or mechanical caging in sample base 100 materials and still can make final sample frame 170 have enough intensity the folding of undesirable TEM specimen holder 170 to take place or separate required thickness at probe tip 160 embedded locations preventing.For example, for the tungsten tipped probe needle point 160 of diameter 125 μ m (.005 "), thickness is that the copper of 250-500 μ m (.010 "-.020 ") is suitable for sample base 100.Specimen holder 170 materials and sample base 100 materials that center on cut away in the zone 130 at probe tip and all cave in slightly, to allow to be used for the space of cutting surface, can not stay any part of the cutting probe tip 160 of the 3mm external diameter that extends beyond standard TEM specimen holder 170 with cutting probe tip 160, or extend beyond any part of cutting probe tip 160 of external boundary of the standard TEM specimen holder 170 of any other suitable shape.
Include mating holes 110, be used for cutting or the mechanical device of shaping operation to allow sample base 100 is aligned in.In the situation that adopts C shape TEM specimen holder 170, probe tip clearance groove 125 (Fig. 3) is the straight trough that passes sample base 100, it surpasses the external diameter of TEM specimen holder 170 to external radiation from the center of TEM specimen holder 170, this has produced the gap that is used for probe tip 160, to allow before cutting and shaping operation, probe tip 160 is alignd along the surface of TEM specimen holder 170.
In cutting and shaping operation, TEM specimen holder 170 is cut out from sample base 700 (Fig. 4).As mentioned above, TEM specimen holder 170 can be made C shape, or other have the shape of circumferential clearance 190, ground so that can carry out the FIB ion afterwards the sampling sample in the plane of TEM specimen holder 170, to produce approximately and the thin part of TEM specimen holder 170 parallel plane energy, perhaps also can make other shapes that allow to carry out same process through electronics.In order to carry out the grinding of sample 140 end faces afterwards, gap 190 can cut out from template at the opening part in C shape hole 135, and this opening is limited by the piston ring land 120 that template is linked to each other with sample base 100.In order to carry out the grinding of sample 140 bottom surfaces afterwards, the gap can cut out from template in the position roughly relative with the opening in hole 135.
In cutting and forming process, harder tungsten tipped probe needle point 160 be pressed into TEM specimen holder 170 than in the soft material, and the part that extends to outside the external diameter of 3mm TEM specimen holder shape 170 on the probe tip 160 is cut off.TEM specimen holder 170 materials are induced with plastic deformation, thereby copper product machinery is round probe tip 160, to be locked in position (Fig. 6).
Figure 10-13 shows the conventional process of cutting and shaping operation.The operator is placed on TEM sample base 100 on the outer mold 280 and (carries out this operation and can manually carry out if this operates in the FIB outside; Perhaps, if it carries out in the FIB vacuum chamber and can carry out automatically), and each probe tip 160 is alignd as follows, promptly, each probe tip 160 aligns with probe tip clearance groove 125, and the sample 140 that links to each other with probe tip 160 is oriented to be parallel to the plane of TEM specimen holder 170.Inner mold 290 and outer mold 280 are all supporting specimen holder 170 and probe tip 160.After in case each probe tip fixes, the operator manually or automatically should one or more probe tips, TEM sample base 100 and all supporting hardwares all are positioned at below the main mounting blocks 220, and activate a jettron 310, make under the effect of main mounting blocks 220 and the actuator 300 of the hardware that links to each other on be positioned at above-mentioned main mounting blocks 220 to move down.Actuator 300 is preferably pneumatic, but also can be hydraulic pressure or electronic.Also can be useful on the discharge pipe 305 of pneumatic actuator.
When showing and move down along with main mounting blocks 220, Figure 11-13 is shaped and the process of cutting operation.Profiling bar 250 contacts each probe tip 160, and it is pressed downwardly onto in TEM specimen holder 170 materials.This process lasts till that the interface of TEM specimen holder and probe tip produces enough resistances, can overcome the power of pressing spring 230 down.The power of following pressing spring 230 is regulated the power that bolt 240 is set to hope by spring, all is pressed into fully in the TEM sample base 100 to guarantee each probe tip 160.Rod 250 comprises one or more teeth 260, and this tooth makes it when quilt is downward, and the specimen holder material of this probe tip 160 of probe tip periphery seal is flowed.
In case the resistance of spring 230 is overcome, and during mobile the stopping of rod 250, cutting drift 270 continues to advance downwards, use the supporting role of inner mold 290 and outer mold 280, length is on demand sheared each probe tip 160, cut off the fin 120 that connects TEM specimen holder 170 from the TEM sample base 100 of remainder, and in this specimen holder 170, produce C shape opening, or any other suitable shaped aperture.The operator discharges jettron then, so that main mounting blocks 220 turns back to its initial position with the hardware that links to each other, TEM specimen holder 170 is separated with TEM sample base 100, and makes specimen holder comprise one or more probe tips 160 that are connected with sample 140.
Because those skilled in the art can revise foregoing specific embodiment, claim scope of the present invention has contained this modification and equivalent variations.
Claims (8)
1. sample base that is used to prepare the TEM specimen holder, this sample base comprises:
Sheet material;
This sheet material comprises a TEM specimen holder template; With
One or more probe tip clearance grooves that pass described sheet material, it links to each other TEM specimen holder template with the edge of described sheet material.
2. sample base according to claim 1 is characterized in that described sheet material comprises a kind of metal, and it is selected from the group that following material is formed: copper, molybdenum, aluminium, gold, silver, nickel and beryllium.
3. sample base according to claim 1 is characterized in that described sheet material has surperficial corrugation.
4. sample base according to claim 1 is characterized in that, described sample base also comprises mating holes, is used for the sample base is aligned in press.
5. sample base according to claim 1 is characterized in that, also comprises:
Be arranged at least one hole of described sheet material, it limits the external boundary of TEM specimen holder template; Described hole has an opening;
The opening in described hole limits a material piston ring land;
Described piston ring land is connected to described sheet material with TEM specimen holder template; And
Pass described one or more probe tip clearance grooves of described sheet material, it is connected to described hole at the edge of described sheet material.
6. sample base according to claim 5 is characterized in that, described hole is a C shape.
7. sample base according to claim 5 is characterized in that, described TEM specimen holder is a rectangle.
8. sample base according to claim 5 is characterized in that, described hole is a rectangle.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51904603P | 2003-11-11 | 2003-11-11 | |
| US60/519,046 | 2003-11-11 | ||
| US10/896,596 | 2004-07-22 | ||
| US10/896,596 US7053383B2 (en) | 2003-11-11 | 2004-07-22 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| PCT/US2004/036560 WO2005046851A2 (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101646602A Division CN101644642B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN200910164659XA Division CN101644641B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646585A Division CN101644640B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646570A Division CN101644639B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1879188A CN1879188A (en) | 2006-12-13 |
| CN1879188B true CN1879188B (en) | 2010-12-08 |
Family
ID=37510790
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101646585A Expired - Fee Related CN101644640B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN200910164659XA Expired - Fee Related CN101644641B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646570A Expired - Fee Related CN101644639B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646602A Expired - Fee Related CN101644642B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2004800330627A Expired - Fee Related CN1879188B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
Family Applications Before (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101646585A Expired - Fee Related CN101644640B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN200910164659XA Expired - Fee Related CN101644641B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646570A Expired - Fee Related CN101644639B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
| CN2009101646602A Expired - Fee Related CN101644642B (en) | 2003-11-11 | 2004-11-03 | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (5) | CN101644640B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5973466B2 (en) | 2011-01-28 | 2016-08-23 | エフ・イ−・アイ・カンパニー | Preparation of TEM sample |
| JP6224612B2 (en) | 2011-12-01 | 2017-11-01 | エフ・イ−・アイ・カンパニー | High-throughput TEM preparation process and hardware for backside thinning of cross-section observation slices |
| US10465293B2 (en) * | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| EP2755226B1 (en) * | 2013-01-15 | 2016-06-29 | Fei Company | Sample carrier for an electron microscope |
| CN103278357A (en) * | 2013-04-28 | 2013-09-04 | 上海华力微电子有限公司 | Preparation method of fixed-point planar-view TEM sample |
| CN103698179B (en) * | 2013-12-17 | 2016-04-13 | 武汉新芯集成电路制造有限公司 | A kind of method preparing specific failpoint transmission electron microscope planar sample |
| CN103969105B (en) * | 2014-05-21 | 2017-01-18 | 上海华力微电子有限公司 | Vibration reduction device and method for focusing ion beam machine probe |
| CN107576823A (en) * | 2017-09-05 | 2018-01-12 | 浙江大学 | Nanopositioner for transmission electron microscope sample bar |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270552A (en) * | 1991-08-22 | 1993-12-14 | Hitachi, Ltd. | Method for separating specimen and method for analyzing the specimen separated by the specimen separating method |
| US6420722B2 (en) * | 2000-05-22 | 2002-07-16 | Omniprobe, Inc. | Method for sample separation and lift-out with one cut |
| US6570170B2 (en) * | 2001-03-01 | 2003-05-27 | Omniprobe, Inc. | Total release method for sample extraction from a charged-particle instrument |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001021467A (en) * | 1999-07-08 | 2001-01-26 | Hitachi Ltd | Sample preparing method through use of focusing ion beam and focusing ion beam preparing device |
-
2004
- 2004-11-03 CN CN2009101646585A patent/CN101644640B/en not_active Expired - Fee Related
- 2004-11-03 CN CN200910164659XA patent/CN101644641B/en not_active Expired - Fee Related
- 2004-11-03 CN CN2009101646570A patent/CN101644639B/en not_active Expired - Fee Related
- 2004-11-03 CN CN2009101646602A patent/CN101644642B/en not_active Expired - Fee Related
- 2004-11-03 CN CN2004800330627A patent/CN1879188B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270552A (en) * | 1991-08-22 | 1993-12-14 | Hitachi, Ltd. | Method for separating specimen and method for analyzing the specimen separated by the specimen separating method |
| US6420722B2 (en) * | 2000-05-22 | 2002-07-16 | Omniprobe, Inc. | Method for sample separation and lift-out with one cut |
| US6570170B2 (en) * | 2001-03-01 | 2003-05-27 | Omniprobe, Inc. | Total release method for sample extraction from a charged-particle instrument |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1879188A (en) | 2006-12-13 |
| CN101644640B (en) | 2012-07-04 |
| CN101644642A (en) | 2010-02-10 |
| CN101644639A (en) | 2010-02-10 |
| CN101644640A (en) | 2010-02-10 |
| CN101644642B (en) | 2012-03-14 |
| CN101644641A (en) | 2010-02-10 |
| CN101644641B (en) | 2012-07-04 |
| CN101644639B (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7115882B2 (en) | TEM sample holder | |
| CN1879188B (en) | Method and apparatus for rapid sample preparation in a focused ion beam microscope | |
| CN1715863B (en) | Method for the removal of a microscopic sample from a substrate | |
| CN1715862B (en) | Apparatus for evacuating a sample | |
| US20060219919A1 (en) | TEM sample holder and method of forming same | |
| CN112067405B (en) | Preparation method of plane TEM sample and plane TEM sample | |
| US8729469B1 (en) | Multiple sample attachment to nano manipulator for high throughput sample preparation | |
| US7053383B2 (en) | Method and apparatus for rapid sample preparation in a focused ion beam microscope | |
| US20040113648A1 (en) | Method of exposing desired layers in a multi-layer semiconductor using focused ion beams for physical failure | |
| CN110672881A (en) | Metal gate structure and method of fabricating the same | |
| KR100694580B1 (en) | method for manufacturing Transmission Electron Microscope of Specimen for Analyzing | |
| CN205484689U (en) | Failure analysis system | |
| KR100928508B1 (en) | Grid for fixing semiconductor specimen and manufacturing method | |
| KR100595136B1 (en) | Method of making tem sample using fib | |
| KR20060017393A (en) | Method for analyzing contact in semiconductor device | |
| CN114324427A (en) | Power semiconductor device packaging sintering evaluation method | |
| KR20060078915A (en) | Manufacturing method of sample for tem analysis | |
| KR100552590B1 (en) | Sample holder | |
| CN114582747A (en) | Method for positioning failure position in semiconductor structure and three-dimensional memory | |
| Lee et al. | Novel method of separating probe and wire bond regions without increasing die size and reducing weak fab-back end of line adhesion interfaces | |
| TW202125561A (en) | Analysis system, method for inspecting lamella, and charged particle beam device | |
| CN201060150Y (en) | Example platform | |
| KR20030029402A (en) | Method for forming the tem sample of wafer analysis | |
| Hsieh et al. | Quick process troubleshooting by using advanced SEM ADC system | |
| KR20060039758A (en) | Method for making workpieces by use of laser marking |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1095426 Country of ref document: HK |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1095426 Country of ref document: HK |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101208 Termination date: 20131103 |