CN1870244A - 一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 - Google Patents
一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 Download PDFInfo
- Publication number
- CN1870244A CN1870244A CNA2005100262575A CN200510026257A CN1870244A CN 1870244 A CN1870244 A CN 1870244A CN A2005100262575 A CNA2005100262575 A CN A2005100262575A CN 200510026257 A CN200510026257 A CN 200510026257A CN 1870244 A CN1870244 A CN 1870244A
- Authority
- CN
- China
- Prior art keywords
- copper
- bias
- contact hole
- layer
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004020 conductor Substances 0.000 title claims abstract description 10
- 239000000126 substance Substances 0.000 title claims description 16
- 238000005530 etching Methods 0.000 title claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 238000000227 grinding Methods 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- 229910001431 copper ion Inorganic materials 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical compound [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100262575A CN100373589C (zh) | 2005-05-27 | 2005-05-27 | 一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100262575A CN100373589C (zh) | 2005-05-27 | 2005-05-27 | 一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1870244A true CN1870244A (zh) | 2006-11-29 |
| CN100373589C CN100373589C (zh) | 2008-03-05 |
Family
ID=37443851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100262575A Expired - Fee Related CN100373589C (zh) | 2005-05-27 | 2005-05-27 | 一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100373589C (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740330B (zh) * | 2008-11-17 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨及通孔形成方法 |
| CN109605210A (zh) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | 一种研磨头及化学机械研磨设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6811658B2 (en) * | 2000-06-29 | 2004-11-02 | Ebara Corporation | Apparatus for forming interconnects |
| JP3907432B2 (ja) * | 2001-03-16 | 2007-04-18 | 株式会社荏原製作所 | 電解研磨用電解液及び電解研磨方法 |
| US6881664B2 (en) * | 2001-08-28 | 2005-04-19 | Lsi Logic Corporation | Process for planarizing upper surface of damascene wiring structure for integrated circuit structures |
| US6793797B2 (en) * | 2002-03-26 | 2004-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for integrating an electrodeposition and electro-mechanical polishing process |
| JP2004209588A (ja) * | 2002-12-27 | 2004-07-29 | Ebara Corp | 研磨装置及び研磨方法 |
-
2005
- 2005-05-27 CN CNB2005100262575A patent/CN100373589C/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740330B (zh) * | 2008-11-17 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨及通孔形成方法 |
| CN109605210A (zh) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | 一种研磨头及化学机械研磨设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100373589C (zh) | 2008-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Steigerwald et al. | Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures | |
| US6350694B1 (en) | Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials | |
| US8017516B2 (en) | Method for stress free conductor removal | |
| US5321304A (en) | Detecting the endpoint of chem-mech polishing, and resulting semiconductor device | |
| US7452817B2 (en) | CMP method providing reduced thickness variations | |
| KR100359552B1 (ko) | 반도체 기판의 표면 평탄화 처리 방법 및 절연층에서의 전도성 플러그 생성 방법 | |
| CN107665829B (zh) | 晶圆混合键合中提高金属引线制程安全性的方法 | |
| US8183139B2 (en) | Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer | |
| US20070105247A1 (en) | Method And Apparatus For Detecting The Endpoint Of A Chemical-Mechanical Polishing Operation | |
| US6503827B1 (en) | Method of reducing planarization defects | |
| US6645863B2 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| US6489240B1 (en) | Method for forming copper interconnects | |
| US20060172527A1 (en) | Method for forming a defined recess in a damascene structure using a CMP process and a damascene structure | |
| US6653224B1 (en) | Methods for fabricating interconnect structures having Low K dielectric properties | |
| CN1870244A (zh) | 一种在化学机械研磨中减少导体结构碟陷与侵蚀的方法 | |
| CN102820216A (zh) | 半导体器件的制备方法 | |
| CN1437763A (zh) | 化学机械抛光用研磨剂 | |
| US6809032B1 (en) | Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques | |
| US6825117B2 (en) | High PH slurry for chemical mechanical polishing of copper | |
| CN1755901A (zh) | 化学机械研磨工艺 | |
| US6777807B1 (en) | Interconnect integration | |
| CN1205665C (zh) | 镶嵌结构的制造方法 | |
| US6211060B1 (en) | Method for planarizing a damascene structure | |
| DeBear et al. | Spin-etch planarization for dual damascene interconnect structures | |
| KR100642921B1 (ko) | 반도체 소자의 금속배선 형성 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Semiconductor Manufacturing International (Beijing) Corporation Assignor: Semiconductor Manufacturing International (Shanghai) Corporation Contract fulfillment period: 2009.4.29 to 2014.4.29 contract change Contract record no.: 2009990000626 Denomination of invention: Method for reducing saucerization and etching of conductor structure in chemical mechanical lapping Granted publication date: 20080305 License type: Exclusive license Record date: 2009.6.5 Assignee: Semiconductor Manufacturing International (Beijing) Corporation Assignor: Semiconductor Manufacturing International (Shanghai) Corporation Contract fulfillment period: 2009.4.29 to 2014.4.29 Contract record no.: 2009990000626 Denomination of invention: Method for reducing saucerization and etching of conductor structure in chemical mechanical lapping Granted publication date: 20080305 License type: Exclusive license Record date: 20090605 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.4.29 TO 2014.4.29; CHANGE OF CONTRACT Name of requester: SEMICONDUCTOR MANUFACTURING INTERNATIONAL ( BEIJIN Effective date: 20090605 |
|
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080305 Termination date: 20190527 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |