CN1867214A

CN1867214A - Method for preparing electroluminescent matrix device

Info

Publication number: CN1867214A
Application number: CN 200610011861
Authority: CN
Inventors: 邓振波; 陈征; 徐登辉; 肖静; 李秀芳
Original assignee: Beijing Jiaotong University
Current assignee: Beijing Jiaotong University
Priority date: 2006-05-09
Filing date: 2006-05-09
Publication date: 2006-11-22
Anticipated expiration: 2026-05-09
Also published as: CN100469202C

Abstract

The invention relates to a method for preparing electroluminescence matrix element. Wherein, it uses the second electrode separate technique to prepare the second electrode; preparing the first electrode and the organic layer, and preparing one layer of photo-etching protective layer on the organic layer; then preparing one layer of insulated photo-etching rubber on the protective layer whose thickness is larger than 1 micrometer; according to the pattern width and the pattern distance of second electrode, using photo-etching method to etch the photo-etching rubber layer; cleaning and drying to form the second electrode separate pole vertical to the first electrode pattern; preparing the second electrode between the separate poles; when the organic layer is prepared, using photo-etching method to prepare the second electrode separate poles to separate the second electrode pattern, to avoid the mask process, to solve the problems that the mask method has lower resolution and rough pattern, etc.

Description

A kind of preparation method of electroluminescent matrix device

Technical field

The present invention relates to a kind of preparation method of electroluminescent matrix device.

Background technology

The preparation electroluminescent device all must be considered this important step of electrode.Traditional method is to use photoetching process to prepare first electrode, mask method prepares second electrode, i.e. the direct photoetching of first electrode and second electrode blocks some position with the good template of prior photoetching and the electric conducting material (such as aluminium, silver or gold etc.) of desiring evaporation was leaked in other positions.The shape of second electrode that makes is identical with the lithographic pattern of template.But because the limitation of machining accuracy and mould material, the contrast of fringes of electrode is more coarse, exists the plate difficulty simultaneously in the mask process, easily organic layer is caused problem such as physical damnification, can't satisfy the high-resolution requirement of modern flat panel display.1994, C.W.Tang disclosed a kind of United States Patent (USP), patent name: " organic electroluminescent image display device ", the patent No.: 5,276,380.Way with photoetching is directly on glass at electroconductive ITO, the technology of the prefabricated insulated column vertical with the ITO striped.The purpose of this technology is to replace mask technique, improves the resolution of matrix panel.But there is shortcoming in this technology: at first, and short circuit easily; Because organic layer is thinner near the contact-making surface of insulated column and ITO, make electrode material herein that the possibility that is penetrated on the following anode ITO be arranged; Secondly, when this technology was applied to polymer electroluminescent device (POLED), insulated column existed during owing to the spin coating organic layer, can't obtain the uniform organic layer of thickness, must use expensive complicated inkjet technology.

Summary of the invention

The technical problem to be solved in the present invention be overcome when improving electroluminescent matrix device resolution the lines that exist when using mask method to prepare second electrode coarse, to the plate difficulty, easily organic layer is caused defective such as physical damnification.A kind of preparation method of electroluminescent matrix device is provided, and this method uses the second electrode isolation post to prepare second electrode.

The technical solution adopted in the present invention is:

(1) prepared and use behind first electrode and the organic layer inorganic material a-C:N to prepare one deck insulation photoetching protection thin layer on organic layer, thickness is 7 to 15 nanometers, 10 nanometer the bests;

(2) preparation one deck insulated photo-etching rubber on insulation photoetching protection thin layer, thickness is more than or equal to 1 micron;

(3) width of fringe and the fringe spacing required distance according to second electrode of desire preparation uses photoetching process that photoresist layer is carried out etching;

(4) after the cleaning of use conventional method, oven dry and the cooling, remaining insulated photo-etching rubber promptly forms and the vertical raceway groove of the first electrode striped---the second electrode isolation post;

(5) use vapour deposition method to prepare second electrode between the second electrode isolation post, thickness is less than the second electrode isolation post height.

The present invention and the mask technique of present use prepare the beneficial effect that the electroluminescent matrix device of second electrode is compared: at first, by using photoetching to prepare the second electrode isolation post and then prepare second electrode, improved resolution greatly, be easy to reach every millimeter 9 lines in addition more than; Secondly, no longer need mask, thus avoided the mask method problem the problem includes: lines are coarse, to the plate difficulty, easily organic layer is caused problem such as physical damnification.In the preparation process of electroluminescent matrix device, omitted the mask process when preparing second electrode like this; Make high-resolution thin-film EL display panel.

Description of drawings

Fig. 1 has the electroluminescent matrix device schematic diagram of the second electrode isolation post;

Be followed successively by among the figure: glass substrate 1, first electrode 2, organic layer 3, insulation photoetching protection thin layer 4, the second electrode isolation post 5, second electrode 6.

Embodiment

The embodiments of the present invention concrete steps are as follows:

(1) on glass substrate 1, use photoetching process to prepare first electrode 2, spin coating or evaporation organic layer 3 on first electrode 2, and on organic layer, use inorganic material a-C:N to prepare one deck insulation photoetching protection thin layer 4, thickness is 10 nanometers, can't play the photoetching protective effect during less than 7 nanometers, greater than 15 nanometers then device performance decline to a great extent;

(2) preparation one deck insulated photo-etching rubber on insulation photoetching protection thin layer 4, thickness is more than or equal to 1 micron;

(3) according to the second electrode design parameter, promptly electrode width of fringe and fringe spacing the distance etc., the insulated photo-etching rubber layer is carried out photoetching;

(4) clean, dry and cooling with conventional method, remaining insulated photo-etching rubber has promptly formed and the vertical insulated trenches of the first electrode striped---the second electrode isolation post 5;

(5) prepare second electrode 6 at the second electrode isolation intercolumniation with vapour deposition method, thickness is less than the second electrode isolation post height.Thereby finish the preparation of entire device, device architecture as shown in Figure 1.

According to above method, particularly use (2), (3), (4), (5) step, when the preparation electroluminescent matrix device, replaced traditional mask method with photoetching process, improve the resolution of device greatly, when avoiding preparing second electrode to the hardship of plate; And avoided the lines of mask coarse, easily formed shade, easily organic layer has been caused defectives such as physical damnification.

Claims

1. the preparation method of an electroluminescent matrix device, on glass substrate, use photoetching process to prepare first electrode, spin coating or evaporation organic layer on first electrode, preparation insulation photoetching protection thin layer on organic layer, preparation second electrode on insulation photoetching protection thin layer; It is characterized in that the concrete steps that prepare second electrode are:

(1) preparation one deck insulated photo-etching rubber on insulation photoetching protection thin layer, thickness is more than or equal to 1 micron;

(2) according to the width of fringe and the fringe spacing required distance of second electrode of desire preparation, use photoetching process that photoresist layer is carried out etching;

(3) after the cleaning of use conventional method, oven dry and the cooling, remaining insulated photo-etching rubber promptly forms and the vertical raceway groove of the first electrode striped---the second electrode isolation post;

(4) use vapour deposition method to prepare second electrode between the second electrode isolation post, thickness is less than the second electrode isolation post height.