CN103137708B - Active element and manufacturing method thereof - Google Patents
Active element and manufacturing method thereof Download PDFInfo
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- CN103137708B CN103137708B CN201310001513.XA CN201310001513A CN103137708B CN 103137708 B CN103137708 B CN 103137708B CN 201310001513 A CN201310001513 A CN 201310001513A CN 103137708 B CN103137708 B CN 103137708B
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000009413 insulation Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims description 118
- 239000011248 coating agent Substances 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 82
- 230000004888 barrier function Effects 0.000 claims description 74
- 238000005530 etching Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 21
- 239000010409 thin film Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229960001296 zinc oxide Drugs 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- -1 IZO) Chemical compound 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
An active device and a method for fabricating the same. The active element comprises a buffer layer, a channel, a grid electrode, a grid insulation layer, a source electrode and a drain electrode. The buffer layer is configured on a substrate and is provided with a positioning area, wherein the thickness of the buffer layer at the part of the positioning area is larger than that of the buffer layer at the part outside the positioning area. The channel is configured on the buffer layer and is positioned in the positioning area. The grid electrode is positioned above the channel, and the grid insulating layer is configured between the channel and the grid electrode. The source and the drain are positioned above the channel and electrically connected with the channel.
Description
Technical field
The invention relates to a kind of active member and manufacture method thereof.
Background technology
Liquid crystal display panel of thin film transistor (Thin Film Transistor Liquid Crystal Displaypanel; TFT LCD panel) formed primarily of active element array architecture (Active device arraystructure), colour filter array structure (Color filter array structure) and liquid crystal layer.Wherein active element array architecture comprises multiple with the active member of arrayed, namely thin-film transistor (Thin Film Transistor; And the pixel electrode (Pixel Electrode) configured corresponding to each thin-film transistor TFT).Above-mentioned thin-film transistor comprises grid (Gate), passage (Channel), drain electrode (Drain) and source electrode (Source), and thin-film transistor is intended for the switch element of liquid crystal display.
When manufacturing thin-film transistor, oxide semiconductor (oxide semiconductor) is a kind of conventional material.But during with the switch element of oxide semiconductor thin-film transistor as liquid crystal display, because the light penetration of the passage of oxide semiconductor material is higher, make the difficulty having contraposition during other material layer of follow-up storehouse in technique.Although the thickness improving the passage of oxide semiconductor material can reduce its light penetration, this method can make the critical voltage of passage produce skew.Therefore how can have aligning accuracy accurately under the prerequisite of thickness not increasing oxide semiconductor in process, be use oxide semiconductor thin-film transistor for the large main points of one during switch element.
Summary of the invention
The invention provides a kind of active member, its resilient coating has a positioning area, is configured at the passage on positioning area and the telltale mark that can form at the resilient coating of this positioning area in active member technique.
The invention provides a kind of manufacture method of active member, the resilient coating of this active member has a positioning area, utilizes the passage be configured on positioning area and the contraposition that can help at the resilient coating of this positioning area in subsequent technique.
The present invention proposes a kind of active member, comprises a resilient coating, a passage, a grid, a gate insulation layer and one source pole and a drain electrode.Resilient coating is configured on a substrate, has a positioning area, and wherein resilient coating is greater than the thickness of the part beyond positioning area at the thickness of the part of positioning area.Passage is configured on resilient coating, and is positioned at positioning area.Grid is positioned at above passage.Gate insulation layer is configured between passage and grid.Source electrode and drain electrode to be positioned at above passage and to be electrically connected passage.
In one embodiment of this invention, the resilient coating of above-mentioned active member is X1 at the thickness of the part of positioning area, and the thickness of the part of resilient coating beyond positioning area is X2, and the thickness of passage is that Y, X1 add Y and be more than or equal to 40 or 60 nanometers after deducting X2.In addition, X1 is such as more than or equal to 20 nanometers after deducting X2.
In one embodiment of this invention, the thickness of the passage of above-mentioned active member is less than or equal to 70 or 120 nanometers.
In one embodiment of this invention, the material of the resilient coating of above-mentioned active member is the isolation material such as silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), carborundum (SiC), carbonitride of silicium (SiCN) or aluminium oxide (AlO).
In one embodiment of this invention, above-mentioned active member more comprises one first insulating barrier, cover gate and gate insulation layer.Source electrode and drain electrode are positioned on the first insulating barrier, and source electrode and drain electrode run through the first insulating barrier and gate insulation layer and be electrically connected passage.
In one embodiment of this invention, the material of the passage of above-mentioned active member is oxide semiconductor.
In one embodiment of this invention, the material of the passage of above-mentioned active member comprises indium oxide gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (ZnO), tin oxide (SnO), indium zinc oxide (Indium-Zinc Oxide, IZO), gallium oxide zinc (Gallium-Zinc Oxide, GZO), zinc-tin oxide (Zinc-Tin Oxide, ZTO), the metal oxide materials such as indium oxide gallium (IGO), indium tin zinc oxide (ITZO) or tin indium oxide (Indium-Tin Oxide, ITO).
In one embodiment of this invention, the gate insulation layer of above-mentioned active member comprises a main insulating layer and a secondary insulating barrier.Main insulating layer covers passage and resilient coating, and secondary insulating barrier covers passage.
In one embodiment of this invention, the thickness of secondary insulating barrier is more than or equal to 20 nanometers.The thickness of secondary insulating barrier is such as X3, and resilient coating is that X1, X3 add that X1 is more than or equal to 20 nanometers at the thickness of the part of positioning area.Or the thickness of secondary insulating barrier is such as X3, and resilient coating is X1 at the thickness of the part of positioning area, the thickness of the part of resilient coating beyond positioning area is that X2, X3 add X1 and be more than or equal to 20 nanometers after deducting X2.
The present invention proposes a kind of manufacture method of active member.In this manufacture method, first form a resilient coating on a substrate.Then, form a channel material layer on aforesaid resilient coating, afterwards again by this channel material pattern layers to form a passage.Wherein, resilient coating has a positioning area, and resilient coating is greater than the thickness of the part beyond positioning area at the thickness of the part of positioning area.Passage is configured on resilient coating, and is positioned at positioning area.After having manufactured passage and the resilient coating with two kinds of thickness, then form a gate insulation layer on passage.Then, with passage and resilient coating, the part below passage is for alignment mark, forms a grid on gate insulation layer.Finally, form one source pole and to drain above passage and to be electrically connected aforesaid passage.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, the step forming passage comprises patterning channel material layer to form passage, and thinning resilient coating is not by the part that passage covers, with the thickness making the thickness of the part of resilient coating below passage be greater than the part do not covered by passage.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, the method forming the part that passage and thinning resilient coating are not covered by passage comprises the following steps.Form an etching mask predetermined region forming passage on channel material layer.The part that etched channels material layer is not covered by etching mask to form passage, and continues etch buffer layers not by part that passage covers.Remove etching mask.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, the while that the step of formation passage comprising, patterning channel material layer and resilient coating are to form channel layer and to have the resilient coating of two thickness.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, after the gate formation with formation source electrode and drain electrode before, more comprise formation one first insulating barrier with cover gate and gate insulation layer, and source electrode and drain electrode run through the first insulating barrier and gate insulation layer and are electrically connected passage.
The present invention proposes another kind of active member, comprises a passage, a grid, a gate insulation layer and one source pole and a drain electrode.Passage is configured on a substrate.Grid is positioned at above passage.Gate insulation layer comprises a main insulating layer and a secondary insulating barrier, is configured between passage and grid.Source electrode and drain electrode to be positioned at above passage and to be electrically connected passage.
In one embodiment of this invention, the main insulating layer of above-mentioned active member covers passage and substrate, and secondary insulating barrier covers passage.
In one embodiment of this invention, the thickness of the secondary insulating barrier of above-mentioned active member is more than or equal to 20 nanometers.
In one embodiment of this invention, above-mentioned active member more comprises a resilient coating, is configured on substrate.Passage is configured on resilient coating.In addition, resilient coating such as has a positioning area.Passage is positioned at positioning area.Resilient coating is greater than the thickness of the part beyond positioning area at the thickness of the part of positioning area.
In one embodiment of this invention, the resilient coating of above-mentioned active member is such as X1 at the thickness of the part of positioning area, and the thickness of the part of resilient coating beyond positioning area is X2, and the thickness of passage is that Y, X1 add Y and be more than or equal to 40 or 60 nanometers after deducting X2.Moreover X1 is such as more than or equal to 20 nanometers after deducting X2.
In one embodiment of this invention, the thickness of the secondary insulating barrier of above-mentioned active member is X3, and resilient coating is that X1, X3 add that X1 is more than or equal to 20 nanometers at the thickness of the part of positioning area.Or the such as thickness of secondary insulating barrier is X3, and resilient coating is X1 at the thickness of the part of positioning area, the thickness of the part of resilient coating beyond positioning area is that X2, X3 add X1 and be more than or equal to 20 nanometers after deducting X2.
In one embodiment of this invention, the material of the resilient coating of above-mentioned active member is the isolation material such as silica, silicon nitride, silicon oxynitride, carborundum, carbonitride of silicium or aluminium oxide.
In one embodiment of this invention, the thickness of the passage of above-mentioned active member is less than or equal to 70 or 120 nanometers.
In one embodiment of this invention, above-mentioned active member more comprises one first insulating barrier, cover gate.Source electrode and drain electrode are positioned on the first insulating barrier, and source electrode and drain electrode run through the first insulating barrier and be electrically connected passage.
In one embodiment of this invention, the material of the passage of above-mentioned active member is oxide semiconductor.
In one embodiment of this invention, the material of the passage of above-mentioned active member comprises the metal oxide materials such as indium oxide gallium zinc, zinc oxide, tin oxide, indium zinc oxide, gallium oxide zinc, zinc-tin oxide, indium oxide gallium, indium tin zinc oxide or tin indium oxide.
The present invention proposes the manufacture method of another kind of active member.In this manufacture method, first sequentially form a channel material layer and an insulated photo-etching rubber material layer on a substrate.Then, patterning insulated photo-etching rubber material layer and form a secondary insulating barrier.Afterwards, with secondary insulating barrier for mask and patterning channel material layer to form a passage.Then, a main insulating layer is formed to cover secondary insulating barrier and substrate.Wherein, main insulating layer and secondary insulating barrier form a gate insulation layer.Then, with passage and secondary insulating barrier for alignment mark, a grid is formed on gate insulation layer.Afterwards, form one source pole and to drain above passage and to be electrically connected passage.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, be more included in before forming channel material layer and form a resilient coating.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, more be included in formed after passage with formation main insulating layer before, thinning resilient coating not by the part that passage covers, with the thickness making the thickness of the part of resilient coating below passage be greater than the part do not covered by passage.In addition, the step forming passage and thinning resilient coating is such as mask and completing simultaneously with secondary insulating barrier.
In one embodiment of this invention, in the manufacture method of above-mentioned active member, after the gate formation with formation source electrode with drain electrode before, more comprise formation one first insulating barrier with cover gate, and source electrode and drain electrode run through the first insulating barrier and are electrically connected passage.
Based on above-mentioned, in active member of the present invention and manufacture method thereof, the thickness due to the resilient coating below passage is greater than the thickness of the resilient coating of other parts, so can as the alignment mark in technique.In addition, when gate insulation layer comprises secondary insulating barrier, comparatively smooth surface can be obtained and avoid damaging by plasma.
Accompanying drawing explanation
Figure 1A to Fig. 1 I is the section schematic flow sheet of the manufacture method of the active member of one embodiment of the invention.
Fig. 2 A to Fig. 2 F is the section schematic flow sheet of the passage of Fig. 1 C and the manufacture method of resilient coating.
Fig. 3 is the active member of another embodiment of the present invention.
Fig. 4 is the active member of one more embodiment of the present invention.
Fig. 5 A to Fig. 5 F is the section schematic flow sheet of the manufacture method of the active member of another embodiment of the present invention.
Fig. 6 and Fig. 7 is the generalized section forming the step of passage in the manufacture method of the active member of other two embodiments of the present invention.
Wherein, Reference numeral:
100,300,400: active member
101: substrate
102: photoresist material layer
103: ultraviolet light
104: photomask
105: etching mask
110: resilient coating
110a: positioning area
120 ': channel material layer
120: passage
130: gate insulation layer
132: main insulating layer
134: secondary insulating barrier
134 ': insulated photo-etching rubber material layer
140: grid
140 ': gate material layers
150: the first insulating barriers
160: source electrode
170: drain electrode
180: the second insulating barriers
190: pixel electrode
Y: the thickness of passage
X1: resilient coating is at the thickness of the part of positioning area
X2: the thickness of the part of resilient coating beyond positioning area
X3: the thickness of secondary insulating barrier
Embodiment
Figure 1A to Fig. 1 I is the section schematic flow sheet of the manufacture method of the active member of one embodiment of the invention.Please refer to Figure 1A to Fig. 1 I.First please refer to Figure 1A, provide a substrate 101, this substrate 101 is such as glass substrate or plastic base.Then, this substrate 101 forms one deck resilient coating 110.Then as Figure 1B illustrate, resilient coating 110 is formed a channel material layer 120 '.The Impurity Diffusion that resilient coating 110 can prevent substrate 101 from containing is pollution channels material layer 120 ' to channel material layer 120 ', makes active member 100 being electrically affected when driving even further.In addition, due to resilient coating 110 covered substrate 101 all sidedly, therefore resilient coating 110 also can suppress the amplitude of substrate 101 warpage.
Then, as Fig. 1 C illustrate, after forming resilient coating 110 and channel material layer 120 ' on the substrate 101 respectively, patterning can be carried out to form a passage 120 to channel material layer 120 '.Wherein, resilient coating 110 has a positioning area 110a, and resilient coating 110 is greater than the thickness of the part beyond positioning area 110a at the thickness of the part of positioning area 110a.The passage 120 formed by channel material layer 120 ' is configured on resilient coating 110, and is positioned at positioning area 110a.
As Fig. 1 D illustrate, after having manufactured passage 120 and the resilient coating 110 with two kinds of thickness, formed a gate insulation layer 130 on passage 120.This gate insulation layer 130 has insulation effect, can completely cut off passage 120 and be illustrated in Fig. 1 E with the grid 140(that will be formed afterwards).The method forming gate insulation layer 130 is such as use chemical vapour deposition technique (Chemical Vapor Deposition, CVD), but be not limited to this, also the mode of other technique be applicable to can be used, as: screen painting, coating, ink-jet, energy source process etc., the present invention does not limit the mode forming gate insulation layer 130.
As Fig. 1 E illustrate, a grid 140 is formed on gate insulation layer 130.Compared to the resilient coating 110 outside positioning area 110a, the thickness of the passage 120 being positioned at positioning area 110a and both resilient coatings 110 superposition of being positioned at positioning area 110a is thicker, therefore light transmission can and positioning area 110a outside resilient coating 110 distinguish to some extent.When formation grid 140 is on gate insulation layer 130, can utilize the difference of this light transmission, with passage 120 and resilient coating 110, the part below passage 120 is as an alignment mark.In other words, when will form grid 140 in subsequent technique, do not need to prepare extra to bit patterns, grid 140 contraposition in the preparation can be completed.
As Fig. 1 F illustrate, formation grid 140 after, then formed one first insulating barrier 150.The meeting of this first insulating barrier 150 is cover gate 140 and gate insulation layer 130 simultaneously.Refer again to Fig. 1 G, one source pole 160 and drains and 170 to be formed at above passage 120 and to be electrically connected at passage 120.To be separated by a segment distance between source electrode 160 and drain electrode 170, and source electrode 160 and drain electrode 170 run through the first insulating barrier 150 and gate insulation layer 130 and are electrically connected at the passage 120 of below.So far, namely roughly complete the active member of the present embodiment, below introduce the step that other alternative is carried out.
As Fig. 1 H illustrate, after forming source electrode 160 and drain electrode 170, then form one second insulating barrier 180 and be covered in source electrode 160 and drain electrode 170.Please then refer to Fig. 1 I, a pixel electrode 190 is formed on the second insulating barrier 180, and this pixel electrode 190 is be electrically connected with drain electrode 170.
Fig. 2 A to Fig. 2 F is the section schematic flow sheet of the passage of Fig. 1 C and the manufacture method of resilient coating.Please refer to Fig. 2 A and Fig. 2 B, after obtaining semi-finished product as shown in Figure 1B, the coating method such as rotary coating (spincoating) method or slit coating (slot die coating) method first can be utilized at channel material layer 120 ' upper coating one deck photoresist material layer 102, make it cover on channel material layer 120 '.
Then, as shown in Figure 2 C, exposed with ultraviolet light 103 pairs of photoresist material layers 102 by photomask 104.Design (distribution of shading region and not shading region) on photomask 104 can adjust according to the photobehavior of photoresist material layer 102.For example, when photoresist material layer 102 has eurymeric sensing optical activity, the design when design on photomask 104 can have a minus sensing optical activity with photoresist material layer 102 is contrary.
Please refer to Fig. 2 C and Fig. 2 D, carry out a development step with developer solution and the photoresist material layer 102 of local is removed.In the present embodiment, the Other substrate materials used has eurymeric sensing optical activity, therefore the part exposed in photoresist material layer 102 can be dissolved in developer solution and being removed, left part is then stayed on channel material layer 120 ', forms an etching mask 105 in the region of predetermined formation passage 120.
Illustrated as Fig. 2 E, after forming etching mask 105, the action that this etching mask 105 pairs of down channel material layers 120 ' and resilient coating 110 etch can be utilized.It should be noted that the mode of etching can be divided into two kinds.First kind of way is layering etching.First the part that first etched channels material layer 120 ' is not covered by etching mask 105 is to form passage 120.After passage 120 is formed, then carry out second time and etch, to remove in resilient coating 110 not by part that etching mask 105 covers.The second way is then a patterning channel material layer 120 ' and resilient coating 110, to form passage 120 and to have the resilient coating 110 of two thickness.In the step that Fig. 2 E illustrates, channel material layer 120 ' can be etched into passage, and the uniform resilient coating of thickness 110 then can be etched two different parts of thickness originally.The thickness of the resilient coating 110 outside positioning area 110a can be greater than at the thickness of the resilient coating 110 of positioning area 110a.
Finally, as Fig. 2 F illustrate, the etching mask 105 in Fig. 2 E is removed, the resilient coating 110 of positioning area 110a and the structure of passage 120 can be had on the substrate 101.This structure can as alignment mark required during formation grid 140 in subsequent technique.
In addition, in Fig. 1 E, Fig. 1 G and Fig. 1 I, forming grid 140, source electrode 160 and drain electrode 170 and pixel electrode 190, is equally also use the photomask technique being similar to Fig. 2 A to Fig. 2 F.Uniquely unlike, the pattern of photomask 104 used in fig. 2 c, need coordinate grid 140, source electrode 160, drain electrode 170 and the shape required for pixel electrode 190 and change.Therefore, do not repeat to repeat other photomask technique at this.
Fig. 1 I is the active member of one embodiment of the invention.Please refer to Fig. 1 I.Active member 100 comprises resilient coating 110, passage 120, grid 140, gate insulation layer 130 and one source pole 160 and drains 170.Resilient coating 110 is configured on a substrate 101.This resilient coating 110 has a positioning area 110a, and wherein resilient coating 110 is greater than the thickness of the part beyond positioning area 110a at the thickness of the part of positioning area 110a.Passage 120 is configured on resilient coating 110, and is positioned at positioning area 110a.Grid 140 is positioned at above passage 120.One gate insulation layer 130 is configured between passage 120 and grid 140.Source electrode 160 and drain electrode 170 to be positioned at above passage 120 and to be electrically connected passage 120.
The active member 100 of the present embodiment can jointly as telltale mark with passage 120 at the resilient coating 110 of positioning area 110a.Therefore, even if the THICKNESS CONTROL of passage 120 is being less than or equal to 70 or 120 nanometers, contraposition difficulty during subsequent technique also can not caused because thickness is too thin.In addition, when the material of passage 120 is oxide semiconductor, the problem that suitable thickness also can avoid the critical voltage of passage 120 to offset is controlled.
Resilient coating 110 is X1 at the thickness of the part of positioning area 110a, and the thickness of the part of resilient coating 110 beyond positioning area 110a is X2, and the thickness of passage 120 is Y.X1 adds Y and is more than or equal to 40 or 60 nanometers after deducting X2.In other words, the thickness that resilient coating 110 adds upper channel 120 at the thickness of the part of positioning area 110a must have more certain value than the thickness of the part of resilient coating 110 beyond positioning area 110a, produces the effect of location to make the light transmittance of the part beyond positioning area 110a and positioning area 110a have enough difference can carry out identification for process equipment.In addition, X1 is such as more than or equal to 20 nanometers after deducting X2, and resilient coating 110 can be made significantly to separate the thickness in the part of resilient coating 110 beyond positioning area 110a at the thickness of the part of positioning area 110a.The thickness of passage 120 can be less than or equal to 70 or 120 nanometers.The material of resilient coating 110 is such as the isolation material such as silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), carborundum (SiC), carbonitride of silicium (SiCN) or aluminium oxide (AlO).The material of passage 120 can be oxide semiconductor, such as indium oxide gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (ZnO), tin oxide (SnO), indium zinc oxide (Indium-Zinc Oxide, IZO), gallium oxide zinc (Gallium-ZincOxide, GZO), zinc-tin oxide (Zinc-Tin Oxide, ZTO), the metal oxide materials such as indium oxide gallium (IGO), indium tin zinc oxide (ITZO) or tin indium oxide (Indium-Tin Oxide, ITO).
As Fig. 1 I illustrate, the active member 100 of the present embodiment also comprises one first insulating barrier 150.This first insulating barrier 150 cover gate 140 and gate insulation layer 130.Source electrode 160 is positioned on the first insulating barrier 150 with drain electrode 170, and source electrode 160 and drain electrode 170 run through the first insulating barrier 150 and gate insulation layer 130 and be electrically connected passage 120.
Grid 140, source electrode 160 and drain electrode 170 material, can be such as metal or alloy, tin oxide, zinc oxide, indium oxide, tin indium oxide (the indium tin oxide such as their alloy, Al-Nd, APC such as aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), gold (Au) or silver (Ag), ITO), indium zinc oxide (indium zinc oxide, the metal conductive oxide material etc. such as IZO), but the present invention does not limit the material of grid 140, source electrode 160 and drain electrode 170.
Please refer to Fig. 1 I, the active member 100 of the present embodiment more can comprise one second insulating barrier 180 and pixel electrode 190.Pixel electrode 190 material is such as indium tin oxide, indium-zinc oxide or aluminium zinc oxide (aluminum zonc oxide, AZO), but the present invention does not limit the material of pixel electrode 190.
Below will enumerate other embodiment using as explanation.Should be noted that at this, following embodiment continues to use element numbers and the partial content of previous embodiment, wherein adopts identical label to represent identical or approximate element, and eliminates the explanation of constructed content.Explanation about clipped can with reference to previous embodiment, and it is no longer repeated for following embodiment.
Fig. 3 is the active member of another embodiment of the present invention.Please refer to Fig. 3, the gate insulation layer 130 of the active member 300 of the present embodiment comprises main insulating layer 132 and a secondary insulating barrier 134.Main insulating layer 132 covers passage 120 and resilient coating 110, and secondary insulating barrier 134 covers passage 120.The material of the secondary insulating barrier 134 of the present embodiment, for Other substrate materials, can be used as the etching mask of the positioning area 110a of define channel 120 and resilient coating 110.Secondary insulating barrier 134 can increase the difference of the light transmission in the region outside positioning area 110a and positioning area 110a, as when will form grid 140 in subsequent technique to bit patterns.In addition, the present embodiment just covers passage 120 for secondary insulating barrier 134, but secondary insulating barrier 134 also can cover the resilient coating 110 outside positioning area 110a.The configuration of secondary insulating barrier 134 can allow the interface between secondary insulating barrier 134 and passage 120 comparatively smooth.In addition, when the material of secondary insulating barrier 134 is photoresist, the surface of passage 120 can be avoided to produce plasma and to damage.When the material of secondary insulating barrier 134 is inorganic material, because the thickness of secondary insulating barrier 134 is thin compared with the thickness of main insulating layer 132, therefore or plasma damaged condition suffered when passage 120 is directly covered with main insulating layer 132 can be alleviated.
In one embodiment of this invention, the thickness of secondary insulating barrier 134 is more than or equal to 20 nanometers.In addition, the thickness of secondary insulating barrier 134 is such as X3, and resilient coating 110 is that X1, X3 add that X1 is more than or equal to 20 nanometers at the thickness of the part of positioning area 110a.Or the thickness of secondary insulating barrier 134 is such as X3, and resilient coating 110 is X1 at the thickness of the part of positioning area 110a, the thickness of the part of resilient coating 110 beyond positioning area 110a is that X2, X3 add X1 and be more than or equal to 20 nanometers after deducting X2.The material of secondary insulating barrier 134 also can be inorganic thin film, and such as silica (SiOx), silicon nitride (SiNx), aluminium oxide (AlOx) etc. have the material of insulation function, and main insulating layer 132 can be inorganic thin film equally.Main insulating layer 132 can be identical or different with the material of secondary insulating barrier 134.
Fig. 4 is the active member of one more embodiment of the present invention.Please refer to Fig. 4, the active member 400 of the present embodiment and Fig. 3 active member 300 similar, difference is that the active member 400 of the present embodiment does not have resilient coating.Although there is no the resilient coating 110 as Fig. 3, the secondary insulating barrier 134 of gate insulation layer 130 still can be used as in subsequent technique when will form grid 140 to bit patterns.And secondary insulating barrier 134 can be used as the etching mask of define channel 120.
Fig. 5 A to Fig. 5 F is the section schematic flow sheet of the manufacture method of the active member of another embodiment of the present invention.Please refer to Fig. 5 A, in the manufacture method of the active member of the present embodiment, first optionally on a substrate 101, form a resilient coating 110.Then, sequentially formed on resilient coating 110 on a channel material layer 120 ' and an insulated photo-etching rubber material layer 134 '.
Then please refer to Fig. 5 A and Fig. 5 B, patterning insulated photo-etching rubber material layer 134 ' and form a secondary insulating barrier 134, then with secondary insulating barrier 134 for mask and patterning channel material layer 120 ' to form a passage 120.Due to insulated photo-etching rubber material layer 134 ' inherently Other substrate materials, therefore patterning insulated photo-etching rubber material layer 134 ' time, can complete as long as use photomask to carry out exposure imaging to insulated photo-etching rubber material layer 134 '.Afterwards, when patterning channel material layer 120 ', do not need to re-use photomask yet.
Then please refer to Fig. 5 C, form a main insulating layer 132 to cover secondary insulating barrier 134, resilient coating 110 and substrate 101.Wherein, main insulating layer 132 and secondary insulating barrier 134 form a gate insulation layer 130.
Then please refer to Fig. 5 D, form a gate material layers 140 ' on gate insulation layer 130.
Then please refer to Fig. 5 E, with passage 120 with secondary insulating barrier 134 for alignment mark, form a grid 140 on gate insulation layer 130.In addition, after formation grid 140, optionally with grid 140 for etching mask and etch-gate insulating barrier 130 be not by the part that grid 140 covers, with the passage 120 of expose portion.
Then please refer to Fig. 5 F, optionally form one first insulating barrier 150 with cover gate 140.If gate insulation layer 130 is not removed in a previous step by the part that grid 140 covers, then the first insulating barrier 150 also covering gate insulating barrier 130.Afterwards, form one source pole 160 and and drain on 170 the first insulating barriers 150 above passage 120, source electrode 160 and drain 170 and run through the first insulating barrier 150 and be electrically connected passage 120.
Fig. 6 and Fig. 7 is the generalized section forming the step of passage in the manufacture method of the active member of other two embodiments of the present invention.Please refer to Fig. 6, in the manufacture method of the active member of the present embodiment, for mask can synchronously resilient coating 110 not removed by the part that passage 120 covers and expose substrate 101 when forming passage 120 with secondary insulating barrier 134.Afterwards, then carry out the subsequent steps such as such as Fig. 5 C to Fig. 5 F.Please refer to Fig. 7 in addition, in the manufacture method of the active member of the present embodiment, with secondary insulating barrier 134 for mask and when forming passage 120, the part that can synchronously do not covered by passage 120 by resilient coating 110 is thinning, with the thickness making the thickness of the part of resilient coating 110 below passage 120 be greater than the part do not covered by passage 120.Afterwards, then carry out the subsequent steps such as such as Fig. 5 C to Fig. 5 F.
In sum, itself structure stack of active member of the present invention can as the telltale mark in its technique.This telltale mark is made up of at the resilient coating of positioning area and passage position.Because therefore the thickness of position after the resilient coating of positioning area is laminated with passage than the buffering thickness not at positioning area, can have different light transmissions.The difference of this light transmission can be utilized in subsequent technique as a kind of alignment mark.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art can make various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claims in the present invention.
Claims (5)
1. a manufacture method for active member, is characterized in that, comprising:
Form a resilient coating on a substrate;
Form a channel material layer on this resilient coating;
Form a passage, wherein this resilient coating has a positioning area, and wherein this resilient coating is greater than the thickness of the part beyond this positioning area at the thickness of the part of this positioning area, and this passage is configured on this resilient coating, and is positioned at this positioning area; This passage forms the alignment mark that corresponds to this positioning area together with this resilient coating below this passage;
After this telltale mark of formation, form a gate insulation layer on this passage, cover this passage and this resilient coating completely, to make the light transmission outside this positioning area and this positioning area different;
Use this alignment mark to form a grid on this gate insulation layer covering this passage and this resilient coating completely according to different light transmissions; And
Form one source pole and to drain above this passage and to be electrically connected this passage.
2. the manufacture method of active member according to claim 1, is characterized in that, the step forming this passage comprises:
This channel material layer of patterning is to form this passage;
This resilient coating thinning not by the part that this passage covers, with the thickness making the thickness of the part of this resilient coating below this passage be greater than the part do not covered by this passage.
3. the manufacture method of active member according to claim 2, is characterized in that, the method forming the part that this passage and this resilient coating thinning are not covered by this passage comprises:
Form an etching mask predetermined region forming this passage on this channel material layer;
Etch part that this channel material layer do not cover by this etching mask to form this passage, and continue this resilient coating of etching not by part that this passage covers; And
Remove this etching mask.
4. the manufacture method of active member according to claim 1, is characterized in that, the step forming this passage comprises:
Simultaneously this channel material layer of patterning and this resilient coating are to form this channel layer and this has the resilient coating of two thickness.
5. the manufacture method of active member according to claim 1, it is characterized in that, formation this grid after with formation this source electrode and this drain electrode before, more comprise formation one first insulating barrier to cover this grid and this gate insulation layer, and this source electrode and this drain electrode run through this first insulating barrier and this gate insulation layer and are electrically connected this passage.
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| TW101113285 | 2012-04-13 | ||
| TW101113285 | 2012-04-13 | ||
| TW101147605A TWI540737B (en) | 2012-04-13 | 2012-12-14 | Active device and manufacturing method thereof |
| TW101147605 | 2012-12-14 |
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| CN103137708A CN103137708A (en) | 2013-06-05 |
| CN103137708B true CN103137708B (en) | 2015-09-02 |
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|---|---|---|---|---|
| CN1538530A (en) * | 2003-04-17 | 2004-10-20 | 三星Sdi株式会社 | Film transistor and manufacturing method thereof |
| CN1716638A (en) * | 2004-06-14 | 2006-01-04 | 三洋电机株式会社 | Compound semiconductor device and manufacturing method thereof |
| CN1716635A (en) * | 2004-06-29 | 2006-01-04 | 三星Sdi株式会社 | Thin film transistor and method of fabricating the same |
| CN1867214A (en) * | 2006-05-09 | 2006-11-22 | 北京交通大学 | Method for preparing electroluminescent matrix device |
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| US7413966B2 (en) * | 2001-12-29 | 2008-08-19 | Lg Phillips Lcd Co., Ltd | Method of fabricating polysilicon thin film transistor with catalyst |
| US20070051993A1 (en) * | 2005-09-08 | 2007-03-08 | Ming-Che Ho | Method of forming thin film transistor and poly silicon layer of low-temperature poly silicon thin film transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538530A (en) * | 2003-04-17 | 2004-10-20 | 三星Sdi株式会社 | Film transistor and manufacturing method thereof |
| CN1716638A (en) * | 2004-06-14 | 2006-01-04 | 三洋电机株式会社 | Compound semiconductor device and manufacturing method thereof |
| CN1716635A (en) * | 2004-06-29 | 2006-01-04 | 三星Sdi株式会社 | Thin film transistor and method of fabricating the same |
| CN1867214A (en) * | 2006-05-09 | 2006-11-22 | 北京交通大学 | Method for preparing electroluminescent matrix device |
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