CN109411518A - A kind of organic light emitting diode display and preparation method thereof - Google Patents
A kind of organic light emitting diode display and preparation method thereof Download PDFInfo
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- CN109411518A CN109411518A CN201811219052.2A CN201811219052A CN109411518A CN 109411518 A CN109411518 A CN 109411518A CN 201811219052 A CN201811219052 A CN 201811219052A CN 109411518 A CN109411518 A CN 109411518A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The present invention provides a kind of organic light emitting diode display and preparation method thereof, which includes: preparation flexible substrate；Active layer is made in the flexible substrate；The first metal layer is made on the active layer, patterned process is carried out to the first metal layer, so that the first metal layer for being located at display area forms grid and the first metal layer positioned at fan-out area forms the first fan-out line；Second metal layer is made on the grid and first fan-out line, patterned process is carried out to the second metal layer, so that the second metal layer for being located at display area forms the first metal portion and the second metal layer positioned at fan-out area forms the second fan-out line, wherein the resistance value of second fan-out line and first fan-out line is equal.Organic light emitting diode display of the invention and preparation method thereof can be avoided brightness disproportionation, improve display effect.
Description
[technical field]
The present invention relates to field of display technology, more particularly to a kind of organic light emitting diode display and its production side
Method.
[background technique]
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display, have it is light-weight, from
It shines, the advantages that wide viewing angle, driving voltage is low, luminous efficiency is high, low in energy consumption and fast response time, is widely used, especially
Flexible OLED display have the characteristics that it is bent portable, become field of display technology research and development major product.
Existing organic light emitting diode display includes display area and fan-out area, and fan-out area generallys use two layers
The cabling that is fanned out to of data line is arranged in the alternate mode of metal GE1 and GE2, and wherein GE1 and GE2 is single layer structure, and the material of GE1
The resistance value of material is larger, and the resistance value of the material of GE2 is smaller, so that the size of current that data line receives is inconsistent, therefore is easy
Existing brightness disproportionation, namely cause display abnormal, affect display effect.
Therefore, it is necessary to a kind of organic light emitting diode display and preparation method thereof be provided, to solve prior art institute
There are the problem of.
[summary of the invention]
The purpose of the present invention is to provide a kind of organic light emitting diode displays and preparation method thereof, can be avoided brightness
Unevenness improves display effect.
In order to solve the above technical problems, the present invention provides a kind of production method of organic light emitting diode display, packet
It includes:
Prepare flexible substrate；
Active layer is formed in the flexible substrate for being located at display area；
In the active layer and the first metal layer is not made in the flexible substrate of active layer covering, to first gold medal
Belong to layer and carry out patterned process, so that the first metal layer for being located at display area forms grid and the first gold medal positioned at fan-out area
Belong to layer and forms the first fan-out line；
Second metal layer is made on the grid and first fan-out line, the second metal layer is patterned
Processing, so that the second metal layer for being located at the display area forms the first metal portion and the second gold medal positioned at the fan-out area
Belong to layer and form the second fan-out line, and keep the resistance value of second fan-out line and first fan-out line equal, wherein described the
The resistance value of two metal layers and the resistance value of the first metal layer differ.
It is described that figure is carried out to the second metal layer in the production method of organic light emitting diode display of the invention
Caseization processing, so that the second metal layer for being located at the display area forms the first metal portion and positioned at the of the fan-out area
Two metal layers form the second fan-out line, and the step packet for keeping the resistance value of second fan-out line and first fan-out line equal
It includes:
Patterned process is carried out to the second metal layer, so that the second metal layer for being located at the display area forms the
One metal portion and positioned at the fan-out area second metal layer formed the second metal portion；The wherein resistance value of the second metal layer
Less than the resistance value of the first metal layer；
Patterned process is carried out to second metal portion, with obtain thickness less than second metal portion thickness the
Two fan-out lines.
In the production method of organic light emitting diode display of the invention, the second metal layer includes multilayer interest
Belong to layer；
It is described that patterned process is carried out to second metal portion, to obtain the thickness that thickness is less than second metal portion
The second fan-out line the step of include:
By at least one sub- metal layer removal in second metal portion close to top, to obtain thickness less than described second
Second fan-out line of the thickness of metal portion.
In the production method of organic light emitting diode display of the invention, the sub- metal layer packet of first metal portion
Include the Ti/Al/Ti/Al/Ti being sequentially located on the grid and first fan-out line；
The sub- metal layer of second fan-out line includes the Ti/ being sequentially located on the grid and first fan-out line
Al/Ti；
The material of the first metal layer is Mo.
In the production method of organic light emitting diode display of the invention, it is described will be close in second metal portion
Top an at least sub- metal layer removal the step of include:
Second metal portion is etched, by least one sub- metal layer in second metal portion close to top
Removal.
In the production method of organic light emitting diode display of the invention, the method also includes:
Interlayer insulating film is formed in first metal portion and second fan-out line；The interlayer insulating film is carried out
Patterned process, to form two the first via holes；
Third metal layer is formed on the interlayer insulating film and in first via hole, and the third metal layer is carried out
Patterned process, so that the third metal layer for being located at the display area forms source electrode and drain electrode, the source electrode and the leakage
Extremely it is connect by first via hole with the active layer.
In the production method of organic light emitting diode display of the invention, the position of first metal portion with it is described
The position of grid is corresponding.
The present invention also provides a kind of organic light emitting diode displays comprising:
Flexible substrate；
Active layer in the flexible substrate is set, and the active layer is located at display area；
The first metal layer in the active layer and the flexible substrate not covered by the active layer, the first gold medal are set
Belonging to layer includes the first fan-out line positioned at the grid of display area and positioned at fan-out area；
Second metal layer on grid and first fan-out line is set；The second metal layer includes being located at described show
Show first metal portion in region and the second fan-out line positioned at the fan-out area；The wherein resistance value of the second metal layer and institute
The resistance value for stating the first metal layer differs, and the resistance value of second fan-out line and first fan-out line is equal.
In organic light emitting diode display of the invention, the sub- metal layer of first metal portion includes being sequentially located at
Ti/Al/Ti/Al/Ti on the grid and first fan-out line；
The sub- metal layer of second fan-out line includes the Ti/ being sequentially located on the grid and first fan-out line
Al/Ti, the material of the first metal layer are Mo.
In organic light emitting diode display of the invention, the organic light emitting diode display further include:
Interlayer insulating film on the second grid and second metal routing is set；It is set on the interlayer insulating film
First via hole there are two setting；
Third metal layer on the interlayer insulating film and in first via hole is set, and the third metal layer includes
Source electrode and drain electrode positioned at the display area, the source electrode and drain electrode passes through first via hole and the channel connects
It connects.
Organic light emitting diode display of the invention and preparation method thereof, due to the second gold medal using multi-layer metal structure
Belong to layer, so that the resistance value of second metal layer is less than the resistance value of the first metal layer, then the second metal layer by reducing fan-out area
Thickness so that the resistance value of the second fan-out line increases, so that the first of fan-out area is fanned out to cabling and second and is fanned out to
The resistance of cabling is consistent, so that the size of current that data line receives is consistent, avoids brightness disproportionation, improves display effect
Fruit.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the first step of the production method of organic light emitting diode display of the present invention.
Fig. 2 is the structural representation of the first substep in the second step of the production method of organic light emitting diode display of the present invention
Figure.
Fig. 3 is the cross-sectional view of the middle second metal layer of organic light emitting diode display of the present invention.
Fig. 4 is the structural representation of the second substep in the second step of the production method of organic light emitting diode display of the present invention
Figure.
Fig. 5 is the complete structural schematic diagram of the second step processing procedure of the production method of organic light emitting diode display of the present invention.
Fig. 6 is the cross-sectional view of the second fan-out line in organic light emitting diode display of the present invention.
Fig. 7 is the structural schematic diagram of organic light emitting diode display of the present invention.
[specific embodiment]
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is to be given the same reference numerals in the figure.
Please refer to the structure of the first step for the production method that Fig. 1 to 7, Fig. 1 is organic light emitting diode display of the present invention
Schematic diagram.
As shown in Figure 1, organic light emitting diode display of the invention includes display area 101 and fan-out area 102, fan
Region 102 is located at outside display area 101 out, and the signal wire in display area 101 includes data line and scan line, driving chip
Pin is connected by the end of fan-out line and data line, and the driving signal on driving chip is input to display area 101
In data line namely fan-out line connects data line and driving chip.Its production method mainly includes the following steps:
S101, buffer layer, active layer, gate insulating layer, the first metal layer, second grid are sequentially formed on flexible substrates
Insulating layer；To the first metal layer carry out patterned process so that be located at display area the first metal layer formed grid and
The first metal layer positioned at fan-out area forms the first fan-out line；
Flexible substrate 11 is first made on the glass substrate before production, as shown in Figure 1, the successively shape in flexible substrate 11
At buffer layer 12, active layer 13, gate insulating layer 14, the first metal layer 15, second grid insulating layer 16.
The active layer 13 is used to form channel.Active layer 13 is located in display area 101.
Gate insulating layer 14 is located on the active layer 13 and on the buffer layer 12 not covered by active layer 13.
Patterned process is carried out to the first metal layer 15 by a mask plate again, so as to be located at display area 101
The first metal layer forms grid 151 and the first metal layer positioned at fan-out area 102 forms the first fan-out line 152.It is wherein described
The material of the first metal layer 15 is Mo.The first metal layer 15 is also used to be formed scan line (not shown), in an embodiment
In, scan line is arranged in the horizontal direction, and scan line and grid 151 are electrically connected.
Second grid insulating layer 16 is located at the grid 151, the first fan-out line 152 and not by the grid 151 and
On the gate insulating layer 14 of one fan-out line 152 covering.
S102, second metal layer is made on the grid and first fan-out line, the second metal layer is carried out
Patterned process, so that the second metal layer for being located at display area forms the first metal portion and the second metal positioned at fan-out area
Layer forms the second fan-out line, and keeps the resistance value of second fan-out line and first fan-out line equal.
Wherein the quantity of the second fan-out line and first fan-out line is at least one.
In one embodiment, the resistance value of the second metal layer 17 is less than the resistance value of the first metal layer 15, above-mentioned step
Suddenly include:
S1021, patterned process is carried out to the second metal layer, so that the second metal layer for being located at display area is formed
First metal portion and positioned at fan-out area second metal layer formed the second metal portion；
As shown in Fig. 2 to 5, second grid insulating layer 16 is formed on grid 151 and the first metal wire 152, in institute second
Second metal layer 17 is formed on gate insulating layer 16, then patterned process is carried out to the second metal layer 17 by a mask plate,
So that the second metal layer 17 for being located at display area 101 forms the first metal portion 171 and the second metal positioned at fan-out area 102
Layer forms the second metal portion 172.Wherein the position of the first metal portion 171 is corresponding with the position of grid 151, the first metal portion 171
Storage capacitance is formed with grid 151.
As shown in figure 3, the second metal layer 17 includes the sub- metal layer of multilayer positioned at the second grid insulating layer 16
31-35,31-35 respectively correspond Ti/Al/Ti/Al/Ti.That is, the cross section structure of the second metal layer 17 includes being sequentially located at
Ti/Al/Ti/Al/Ti on the second grid insulating layer 16.
S1022, patterned process is carried out to second metal portion, to obtain the thickness that thickness is less than second metal portion
Second fan-out line of degree.
It is described that patterned process is carried out to second metal portion, to obtain the thickness that thickness is less than second metal portion
The second fan-out line the step of include:
S301, at least one sub- metal layer in second metal portion close to top is removed, to obtain thickness less than institute
State the second fan-out line of the thickness of the second metal portion.
For example, patterned process is carried out to second metal portion 172 again, to obtain thickness less than second metal portion
Second fan-out line 173 of 172 thickness.
The step S301 may include:
S3011, second metal portion is etched, by least one son in second metal portion close to top
Metal layer removal.
In one embodiment, as shown in figure 4, being coated with photoresist on the region other than second metal portion 172
36, second metal portion 172 is etched, the sub- metal layer of Al/Ti in the second metal portion 172 close to top is gone
It removes, to obtain second fan-out line 173 of the thickness less than the thickness of second metal portion 172.When the second metal of fan-out area
When the thickness of layer reduces, the resistance value of the second fan-out line 173 increases, so that second fan-out line 173 and first fan
The resistance value of outlet 171 is equal.It will be understood, the sub- metal layer of one layer or two layers or more can also be removed, as long as making
Second fan-out line 173 is equal with the resistance value of first fan-out line 171.Remove above-mentioned photoresist again later.
It should be understood that the thickness for being located at the first metal portion 171 of display area 101 is greater than positioned at fan-out area 102
The thickness of second fan-out line 173.The cross section structure of first metal portion 171 includes being sequentially located on the second grid insulating layer 16
Ti/Al/Ti/Al/Ti.
As shown in fig. 6, the sub- metal layer of second fan-out line 173 includes being sequentially located at the second grid insulating layer 16
On Ti/Al/Ti.Namely the cross section structure of second fan-out line 173 includes 31-33 multilayered structure, 31-33 is respectively corresponded
Ti/Al/Ti.Namely second fan-out line 173 is to etch away the Al/Ti on the upper layer of the second metal portion 172 to be formed.
It should be understood that in other embodiments, the material of the first metal layer of the invention is not limited to Mo, second metal layer
Material be also not necessarily limited to Ti/Al/Ti/Al/Ti.For example the resistance value of the first metal layer can be less than the resistance value of second metal layer, it can
By reducing the thickness of the corresponding the first metal layer of the first fan-out line, make the resistance value phase of the second fan-out line and first fan-out line
Deng.
Since the quantity of data line is relatively more, and the size of display is limited, therefore generally requires layering setting fan-out line,
For example a part of fan-out line (the first fan-out line) is formed by the first metal layer, remaining fan-out line is formed by second metal layer
(the second fan-out line).In one embodiment, for connecting odd data line, the second fan-out line 173 is used for the first fan-out line 152
Connect even data line.And scan line extends directly to connect outside display area with gate driving circuit.
S103, interlayer insulating film is formed in first metal portion and second fan-out line；To the layer insulation
Layer carries out patterned process, to form two the first via holes；
As shown in fig. 7, forming interlayer insulating film 18 in the second metal layer 17, the interlayer insulating film 18 is carried out
Patterned process, to form two the first via hole (not shown)s.
S104, third metal layer is formed on the interlayer insulating film and in first via hole, to the third metal
Layer carries out patterned process so that the third metal layer for being located at the display area forms source electrode and drain electrode, the source electrode and
Drain electrode is connect by first via hole with the active layer.
As shown in fig. 7, third metal layer 19 is formed on the interlayer insulating film 18 and in first via hole, to described
Third metal layer 19 carry out patterned process so that be located at the display area 101 third metal layer 19 formed source electrode 191 with
And drain electrode 192, the source electrode 191 and drain electrode 192 are connect by first via hole with the active layer 13.Third metal
Layer 19 is also used to form data line (not shown), and in one embodiment, data line is arranged along the vertical direction, data line with
Source electrode 191 is electrically connected.It should be understood that in position corresponding with the first fan-out line 152 and the second fan-out line 173 difference (ratio
Such as the starting point of fan-out line) it is provided with third via hole, data line is connected by third via hole with corresponding fan-out line.
The method may also include that
S105, flatness layer is formed on the source electrode and the drain electrode, patterned process is carried out to the flatness layer, with shape
At the second via hole；
As shown in fig. 7, forming flatness layer 20 on the source electrode 191 and the drain electrode 192, the flatness layer 20 is carried out
Patterned process, to form the second via hole (not shown).
S106, anode is formed in second via hole and on the flatness layer and sequentially forms picture on the anode
Plain definition layer and introns.
Anode 21, pixel defining layer 22 and spacer are sequentially formed in second via hole and on the flatness layer 20
23。
Conductive layer is formed in second via hole and on the flatness layer 20, patterned process is carried out to conductive layer,
Anode 21 is formed, forms pixel defining layer 22 and photoresist wall on anode 21, it can be by one of optical cover process to the pixel
Definition layer 22 and photoresist wall carry out pixel defining layer and spacer 23 that patterned process forms predetermined pattern.
The present invention also provides a kind of organic light emitting diode displays, as shown in fig. 7, the organic light-emitting diode display
Device includes the display area 101 and the fan-out area 102, and the cross-section structure of organic light emitting diode display includes: soft
Property substrate 11, buffer layer 12, active layer 13, gate insulating layer 14, the first metal layer 15, second grid insulating layer 16, the second gold medal
Belong to layer 17, furthermore may also include interlayer insulating film 18, third metal layer 19, flatness layer 20, anode 21, pixel defining layer 22 and
Gap 23.The resistance value of the second metal layer 17 and the resistance value of the first metal layer 15 differ.
Buffer layer 12 is located in flexible substrate 11, and active layer 13 is located on the buffer layer 12 in display area 101, and grid is exhausted
Edge layer 14 is located on the active layer 13 and on the buffer layer 12 not covered by active layer 13.
The first metal layer 15 is located on gate insulating layer 14, and the first metal layer 15 includes the grid positioned at display area 101
151 and the first fan-out line 152 positioned at fan-out area 102；
Second grid insulating layer 16 is located at the grid 151 and the first fan-out line 152 and is not fanned by grid 151 and first
On the gate insulating layer 14 that outlet 152 covers.
The second metal layer 17 includes the second fan of the first metal portion 171 and fan-out area positioned at display area 101
Outlet 173；Wherein second fan-out line 173 is equal with the resistance value of first fan-out line 152.
Interlayer insulating film 18 is located at the first metal portion 171, second fan-out line 173 and not by the first metal portion 171
On the second grid insulating layer 16 of second fan-out line 173 covering, two the first via holes on the interlayer insulating film 18.
Third metal layer 19 is located on the interlayer insulating film 18 in first via hole, and third metal layer 19 includes position
Source electrode 191 and drain electrode 192 in the display area 101.
Flatness layer 20 is located at the source electrode 191, the drain electrode 192 and not by source electrode 191, the interlayer of 192 covering of drain electrode
On insulating layer 18, the source electrode 191 and drain electrode 192 are connect by first via hole with the active layer 13.It is described flat
The second via hole (not shown) is provided on smooth layer 20.Anode 21 is located in second via hole and the flatness layer 20
On.
Anode 21 is connect by the second via hole with drain electrode 192.
Pixel defining layer 22 and spacer 23 are sequentially located on the anode 21.
In one embodiment, the resistance value of the second metal layer 17 is less than the resistance value of the first metal layer 15, such as Fig. 3 institute
Show, the second metal layer 17 includes multilayer sub- metal layer 31-35, the 31-35 difference positioned at the second grid insulating layer 16
Corresponding Ti/Al/Ti/Al/Ti.That is, the cross section structure of the second metal layer 17 is exhausted including being sequentially located at the second grid
Ti/Al/Ti/Al/Ti in edge layer 16.It should be understood that the thickness for being located at the first metal portion 171 of display area 101 is greater than
Positioned at the thickness of the second fan-out line 173 of fan-out area 102.The cross section structure of first metal portion 171 is described including being sequentially located at
Ti/Al/Ti/Al/Ti on second grid insulating layer 16.
As shown in fig. 6, the sub- metal layer of second fan-out line 173 includes being sequentially located at the second grid insulating layer 16
On Ti/Al/Ti.Namely the cross section structure of second fan-out line 173 includes 31-33 multilayered structure, 31-33 is respectively corresponded
Ti/Al/Ti.Second fan-out line 173 is to etch away the Al/Ti on the upper layer of the second metal portion 172 to be formed.
Due to the second metal layer using multi-layer metal structure, so that the resistance value of second metal layer is less than the first metal layer
Resistance value, then the thickness of the second metal layer by reducing fan-out area, so that the resistance value of the second fan-out line increases, and then make
Fan-out area first be fanned out to cabling and second be fanned out to cabling resistance it is consistent so that odd data line and even data
The size of current that line receives is consistent, avoids brightness disproportionation, improves display effect.
Organic light emitting diode display of the invention and preparation method thereof, due to the second gold medal using multi-layer metal structure
Belong to layer, so that the resistance value of second metal layer is less than the resistance value of the first metal layer, then the second metal layer by reducing fan-out area
Thickness so that the resistance value of the second fan-out line increases, so that the first of fan-out area is fanned out to cabling and second and is fanned out to
The resistance of cabling is consistent, so that the size of current that data line receives is consistent, avoids brightness disproportionation, improves display effect
Fruit.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of production method of organic light emitting diode display comprising:
Prepare flexible substrate；
Active layer is made in the flexible substrate for being located at display area；
The first metal layer in the active layer and is not made in flexible substrate that the active layer covers, to first gold medal
Belong to layer and carry out patterned process, so that the first metal layer for being located at the display area forms grid and positioned at the of fan-out area
One metal layer forms the first fan-out line；
Second metal layer is made on the grid and first fan-out line, the second metal layer is carried out at patterning
Reason, so that the second metal layer for being located at the display area forms the first metal portion and the second metal positioned at the fan-out area
Layer forms the second fan-out line, and keeps the resistance value of second fan-out line and first fan-out line equal, wherein described second
The resistance value of metal layer and the resistance value of the first metal layer differ.
2. the production method of organic light emitting diode display according to claim 1, which is characterized in that described to described
Second metal layer carries out patterned process, so that the second metal layer for being located at the display area forms the first metal portion and is located at
The second metal layer of the fan-out area forms the second fan-out line, and makes second fan-out line and first fan-out line
The equal step of resistance value includes:
Patterned process is carried out to the second metal layer, so that the second metal layer for being located at the display area forms the first gold medal
Category portion and positioned at the fan-out area second metal layer formed the second metal portion；Wherein the resistance value of the second metal layer is less than
The resistance value of the first metal layer；
Patterned process is carried out to second metal portion, to obtain second fan of the thickness less than the thickness of second metal portion
Outlet, so that the resistance value of second fan-out line and first fan-out line is equal.
3. the production method of organic light emitting diode display according to claim 2, which is characterized in that second gold medal
Belonging to layer includes the sub- metal layer of multilayer；
It is described that patterned process is carried out to second metal portion, with obtain thickness less than second metal portion thickness the
The step of two fan-out lines includes:
By at least one sub- metal layer removal in second metal portion close to top, to obtain thickness less than second metal
Second fan-out line of the thickness in portion.
4. the production method of organic light emitting diode display according to claim 3, which is characterized in that
The sub- metal layer of first metal portion includes the Ti/Al/Ti/ being sequentially located on the grid and first fan-out line
Al/Ti；
The sub- metal layer of second fan-out line includes the Ti/Al/Ti being sequentially located on the grid and first fan-out line；
The material of the first metal layer is Mo.
5. the production method of organic light emitting diode display according to claim 3, which is characterized in that it is described will be described
Include: close to the step of at least sub- metal layer removal at top in second metal portion
Second metal portion is etched, at least one sub- metal layer in second metal portion close to top is gone
It removes.
6. the production method of organic light emitting diode display according to claim 1, which is characterized in that the method is also
Include:
Interlayer insulating film is formed in first metal portion and second fan-out line；Pattern is carried out to the interlayer insulating film
Change processing, to form two the first via holes；
Third metal layer is formed on the interlayer insulating film and in first via hole, and pattern is carried out to the third metal layer
Change processing, so that the third metal layer for being located at the display area forms source electrode and drain electrode, the source electrode and the drain electrode are equal
It is connect by first via hole with the active layer.
7. the production method of organic light emitting diode display according to claim 1, which is characterized in that first gold medal
The position in category portion is corresponding with the position of the grid.
8. a kind of organic light emitting diode display, which is characterized in that including
Flexible substrate；
Active layer in the flexible substrate is set, and the active layer is located at display area；
The first metal layer in the active layer and the flexible substrate not covered by the active layer, the first metal layer are set
Including being located at the grid of the display area and positioned at the first fan-out line of fan-out area；
Second metal layer on grid and first fan-out line is set；The second metal layer includes being located at the viewing area
First metal portion in domain and the second fan-out line positioned at the fan-out area；The wherein resistance value of the second metal layer and described the
The resistance value of one metal layer differs, and the resistance value of second fan-out line and first fan-out line is equal.
9. organic light emitting diode display according to claim 8, which is characterized in that the interest of first metal portion
Belonging to layer includes the Ti/Al/Ti/Al/Ti being sequentially located on the grid and first fan-out line；
The sub- metal layer of second fan-out line includes the Ti/Al/Ti being sequentially located on the grid and first fan-out line,
The material of the first metal layer is Mo.
10. organic light emitting diode display according to claim 8, which is characterized in that the Organic Light Emitting Diode
Display further include:
Interlayer insulating film on the second grid and second metal routing is set；It is provided on the interlayer insulating film
Two the first via holes；
Third metal layer on the interlayer insulating film and in first via hole is set, and the third metal layer includes being located at
The source electrode of the display area and drain electrode, the source electrode and the drain electrode are connected by first via hole and the channel
It connects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811219052.2A CN109411518B (en) | 2018-10-19 | 2018-10-19 | Organic light emitting diode display and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811219052.2A CN109411518B (en) | 2018-10-19 | 2018-10-19 | Organic light emitting diode display and manufacturing method thereof |
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| CN109411518B (en) | 2021-04-02 |
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