CN109755286A - A kind of OLED display panel and preparation method thereof - Google Patents

A kind of OLED display panel and preparation method thereof Download PDF

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Publication number
CN109755286A
CN109755286A CN201910136144.2A CN201910136144A CN109755286A CN 109755286 A CN109755286 A CN 109755286A CN 201910136144 A CN201910136144 A CN 201910136144A CN 109755286 A CN109755286 A CN 109755286A
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CN
China
Prior art keywords
layer
metal layer
display panel
oled display
cathode layer
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CN201910136144.2A
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Chinese (zh)
Inventor
吴焕达
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深圳市华星光电半导体显示技术有限公司
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Priority to CN201910136144.2A priority Critical patent/CN109755286A/en
Publication of CN109755286A publication Critical patent/CN109755286A/en

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Abstract

The application provides a kind of OLED display panel and preparation method thereof, and OLED display panel includes: underlay substrate, and definition has pixel openings area on underlay substrate;Anode layer, respective pixel open region are prepared on underlay substrate;Luminescent layer, respective pixel open region are prepared on anode layer;Cathode layer, it is entire to be prepared on luminescent layer;And metal layer, it is prepared on cathode layer, and the interstitial site setting between corresponding two neighboring pixel openings area;Wherein, metal layer is electrically connected with cathode layer, resistance of the metal layer to reduce cathode layer.

Description

A kind of OLED display panel and preparation method thereof

Technical field

This application involves field of display technology more particularly to a kind of OLED display panel and preparation method thereof.

Background technique

In recent years, organic light emitting display panel is with its ultra-thin, self-luminous, low-power consumption, high efficiency, high contrast and response The advantages that speed is fast becomes product most popular in the market after liquid crystal display panel of thin film transistor.

One layer of ultra-thin metal layer is deposited as cathode electricity in panel surface whole face in existing top emitting AMOLED panel at present Pole, it is infinitely small due to there is the requirement of transmitance to cause the metal layer resistance value that can not accomplish, due to the presence of voltage drop (IR-Drop) So that there are certain pressure drops for the cathode voltage of each position of panel, so that the homogeneity that panel shines is unable to reach and wants It asks.

Therefore, the prior art is defective, needs to improve.

Summary of the invention

The application provides a kind of OLED display panel and preparation method thereof, can reduce the electricity of the cathode of OLED display panel Problem of pressure drop.

To solve the above problems, technical solution provided by the present application is as follows:

The application provides a kind of OLED display panel, comprising:

Underlay substrate, definition has pixel openings area on the underlay substrate;

Anode layer, the corresponding pixel openings area are prepared on the underlay substrate;

Luminescent layer, the corresponding pixel openings area are prepared on the anode layer;

Cathode layer, it is entire to be prepared on the luminescent layer;And

Metal layer is prepared on the cathode layer, and the gap digit between the corresponding adjacent two pixel openings area installs It sets;

Wherein, the metal layer is electrically connected with the cathode layer, so that whole after the metal layer is in parallel with the cathode layer The resistance of body is less than the resistance of the cathode layer itself.

In the OLED display panel of the application, the metal layer is reticular structure.

In the OLED display panel of the application, the metal layer is in a strip shape or sheet and array distribution are described in adjacent two Interstitial site between pixel openings area.

In the OLED display panel of the application, the metal layer with a thickness of between 30 angstroms~400 angstroms.

In the OLED display panel of the application, the metal layer includes gold of the resistance within the scope of 0.05~15ohm/sq Belong to material.

In the OLED display panel of the application, the material of the metal layer is one of silver, aluminium, copper, chromium or one kind More than.

The application also provides a kind of preparation method of OLED display panel, the described method comprises the following steps:

Step S10, forms patterned pixel defining layer on underlay substrate, and the pixel defining layer defines pixel and opens Mouth region;

Step S20 corresponds to the pixel openings area in the underlay substrate and forms luminescent layer, formed on the light-emitting layer Entire cathode layer;

Step S30, the interstitial site corresponded between the adjacent two pixel openings area on the cathode layer form metal Layer, the metal layer is electrically connected with the cathode layer, so that resistance whole after the metal layer is in parallel with the cathode layer is small In the resistance of the cathode layer itself.

In the preparation method of the application, formed on the cathode layer using metal mask plate by evaporation process described in Metal layer, wherein the metal mask plate includes opening portion and occlusion part, and the opening portion corresponds to adjacent two pixel openings Interstitial site between area.

In the preparation method of the application, the metal layer includes metal material of the resistance within the scope of 0.05~15ohm/sq Material.

In the preparation method of the application, the material of the metal layer be one of silver, aluminium, copper, chromium or more than one.

The application's has the beneficial effect that compared to existing OLED display panel, OLED display panel provided by the present application And preparation method thereof, the position by avoiding pixel openings area above cathode layer makes the low-resistance metal layer of a floor, metal Layer is electrically connected with cathode layer, so that resistance whole after the metal layer is in parallel with cathode layer is less than the resistance of cathode layer itself. To reaching the problem of cathode fall is effectively reduced, so be effectively improved OLED display panel shine homogeneity the problem of.Separately Outside, manufacture craft is simple.

Detailed description of the invention

It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of application Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these Figure obtains other attached drawings.

Fig. 1 is the structural schematic diagram of OLED display panel provided by the embodiments of the present application;

Fig. 2 is OLED display panel part film layer explosive view provided by the embodiments of the present application;

Fig. 3 is that OLED display panel localized membrane provided by the embodiments of the present application is laminated into figure;

Fig. 4 is the preparation method flow chart of OLED display panel provided by the embodiments of the present application.

Specific embodiment

The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side] Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.

The application is for the problem that existing OLED display panel, since there are voltage drops for cathode, so that it is aobvious to influence OLED The technical issues of showing the homogeneity that panel shines, the present embodiment is able to solve the defect.

Wherein, the thickness of each film layer and shape do not reflect the actual proportions of the OLED display panel in attached drawing, and purpose is only It is schematically illustrate teachings herein.

As shown in Figure 1, being the structural schematic diagram of OLED display panel provided by the embodiments of the present application.The OLED display surface Plate includes: underlay substrate 10, and the underlay substrate 10 can be array substrate etc.;The OLED is corresponded on the underlay substrate 10 The sub-pixel of display panel is provided with pixel openings area 101;With pixel defining layer 11 between the adjacent two pixel openings area 101 It separates;Anode layer 12, the corresponding pixel openings area 101 are prepared on the underlay substrate 10;Luminescent layer 13, the corresponding picture Plain open region 101 is prepared on the anode layer 12;Cathode layer 14, it is entire to be prepared on the luminescent layer 13;And metal Layer 15, is prepared on the cathode layer 14, and the interstitial site setting between the corresponding adjacent two pixel openings area 101;Its In, the metal layer 15 is electrically connected with the cathode layer 14, so that whole after the metal layer 15 is in parallel with the cathode layer 14 Resistance be less than the cathode layer 14 itself resistance.To reach the problem of 14 voltage drop of cathode layer is effectively reduced, into And be effectively improved OLED display panel shine homogeneity the problem of.

It is understood that the OLED display panel further includes hole injection layer, hole transmission layer, electron transfer layer And/or electronic barrier layer etc..

In conjunction with shown in Fig. 2 and Fig. 3, Fig. 2 is OLED display panel part film layer explosive view provided by the embodiments of the present application;Figure 3 are laminated into figure for OLED display panel localized membrane provided by the embodiments of the present application.The cathode layer 14 is prepared in array in the figure On the luminescent layer 13 of distribution, the metal layer 15 is prepared on the cathode layer 14.Wherein, the metal layer 15 is netted Structure, and avoid the gap setting between corresponding adjacent two luminescent layer 13 of the luminescent layer 13, therefore, the metal layer 15 It will not influence the pixel aperture ratio of the OLED display panel.

In one embodiment, the metal layer 15 is in a strip shape or sheet and array distribution are in adjacent two luminescent layer 13 Between interstitial site.The specific structure of the metal layer 15 can be set according to practical processing procedure, it is not limited here.

In one embodiment, the metal layer 15 with a thickness of between 30 angstroms~400 angstroms, be specifically as follows 50 angstroms, 100 Angstrom, 200 angstroms, 300 angstroms etc..The specific thickness of the metal layer 15 can be set according to practical processing procedure, do not limited herein It is fixed.

In the present embodiment, the metal layer 15 is low-resistance metal material.Specifically, the metal layer 15 includes but unlimited In metal material of the resistance within the scope of 0.05~15ohm/sq.For example, the resistance of the metal layer 15 be 0.1ohm/sq, 0.5ohm/sq, 1ohm/sq, 2ohm/sq, 5ohm/sq etc..

In one embodiment, the material of the metal layer 15 be one of silver, aluminium, copper, chromium or more than one.For The selection of the metal layer 15 can be depending on practical processing procedure, it is not limited here.

By taking single pixel as an example, due to being corresponded between the adjacent two pixel openings area 101 on 14 surface of cathode layer The interstitial site position of the pixel defining layer 11 (corresponding) be provided with the metal layer 15, and the metal layer 15 with it is described Cathode layer 14 is electrically connected.If the resistance of the metal layer 15 is R1, the resistance of the cathode layer 14 is R2, the metal layer 15 After being electrically connected with the cathode layer 14, it is equivalent to that R1 is in parallel with R2, so that the resistance for both obtaining entirety is R3.Thus may be used Know, R3=1/ (1/R1+1/R2), therefore, it can be deduced that R3 is less than R1 or R2.So the metal layer 15 and the cathode layer Whole resistance will substantially reduce after 14 parallel connections, to reach the problem of 14 voltage drop of cathode layer is effectively reduced.

Further, in the present embodiment, in order to guarantee the OLED display panel the metal layer 15 and the yin The electric connection of pole layer 14, the metal layer 15 can directly be made in the top of the cathode layer 14, and with the cathode layer 14 Directly contact.The overall electrical resistance that can guarantee in this way reduces, and improves the reliability of processing procedure.

It is understood that the OLED display panel includes but is not limited to top emission type.The material packet of the anode layer Include but be not limited to the materials such as transparent indium-tin-oxide, Ag;The material of the cathode layer includes but is not limited to transparent indium-tin-oxide.

Present invention also provides the preparation methods of above-mentioned OLED display panel, are shown using the OLED prepared by this method The structure of panel is similar to described in above-described embodiment to principle, and overlaps will not be repeated.As shown in figure 4, and combining figure 1, it the described method comprises the following steps:

Step S10, forms patterned pixel defining layer on underlay substrate, and the pixel defining layer defines pixel and opens Mouth region;

Specifically, pixel-driving circuit, such as tft layer etc. are formed on underlay substrate 10 first;Then in institute It states and forms patterned anode layer 12 on tft layer;It is fixed that patterned pixel is formed on the underlay substrate 10 later Adopted layer 11, and at the same time defining pixel openings area 101.

Step S20 corresponds to the pixel openings area in the underlay substrate and forms luminescent layer, formed on the light-emitting layer Entire cathode layer;

Specifically, the sun first using fine mask plate by evaporation process in the correspondence pixel openings area 101 Luminescent layer 13 is formed on pole layer 12;Then it is formed on the luminescent layer 13 using open mask by evaporation process entire Cathode layer 14.

Step S30, the interstitial site corresponded between the adjacent two pixel openings area on the cathode layer form metal Layer, the metal layer is electrically connected with the cathode layer, so that resistance whole after the metal layer is in parallel with the cathode layer is small In the resistance of the cathode layer itself.

Specifically, the metal layer 15 is formed by evaporation process on the cathode layer 14 using metal mask plate, In, the metal mask plate includes opening portion and occlusion part, and the opening portion corresponds between the adjacent two pixel openings area 101 Interstitial site, the metal layer 15 directly with the cathode layer 14 be in electrical contact.Wherein, the metal layer 15 is low resistive metal Material.

In one embodiment, the metal layer 15 includes but is not limited to gold of the resistance within the scope of 0.05~15ohm/sq Belong to material.

In one embodiment, the material of the metal layer 15 be one of silver, aluminium, copper, chromium or more than one.

In conclusion OLED display panel provided by the present application and preparation method thereof, by avoiding picture above cathode layer The position of plain open region makes one layer of low-resistance metal layer, and metal layer and cathode layer are electrically connected, so that the metal layer and yin Whole resistance is less than the resistance of cathode layer itself after pole layer is in parallel.To reach the problem of cathode fall is effectively reduced, into And be effectively improved OLED display panel shine homogeneity the problem of.

Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit Decorations, therefore the protection scope of the application subjects to the scope of the claims.

Claims (10)

1. a kind of OLED display panel characterized by comprising
Underlay substrate, definition has pixel openings area on the underlay substrate;
Anode layer, the corresponding pixel openings area are prepared on the underlay substrate;
Luminescent layer, the corresponding pixel openings area are prepared on the anode layer;
Cathode layer, it is entire to be prepared on the luminescent layer;And
Metal layer is prepared on the cathode layer, and the interstitial site setting between the corresponding adjacent two pixel openings area;
Wherein, the metal layer is electrically connected with the cathode layer, so that whole after the metal layer is in parallel with the cathode layer Resistance is less than the resistance of the cathode layer itself.
2. OLED display panel according to claim 1, which is characterized in that the metal layer is reticular structure.
3. OLED display panel according to claim 1, which is characterized in that the metal layer is in a strip shape or sheet and array The interstitial site being distributed between the adjacent two pixel openings area.
4. OLED display panel according to claim 1, which is characterized in that the metal layer with a thickness of 30 angstroms~400 Between angstrom.
5. OLED display panel according to claim 1, which is characterized in that the metal layer includes resistance 0.05~ Metal material within the scope of 15ohm/sq.
6. OLED display panel according to claim 1, which is characterized in that the material of the metal layer be silver, aluminium, copper, One of chromium or more than one.
7. a kind of preparation method of OLED display panel, which is characterized in that the described method comprises the following steps:
Step S10, forms patterned pixel defining layer on underlay substrate, and the pixel defining layer defines pixel openings Area;
Step S20 corresponds to the pixel openings area in the underlay substrate and forms luminescent layer, forms whole face on the light-emitting layer Cathode layer;
Step S30, the interstitial site corresponded between the adjacent two pixel openings area on the cathode layer form metal layer, institute It states metal layer to be electrically connected with the cathode layer, so that resistance whole after the metal layer is in parallel with the cathode layer is less than described The resistance of cathode layer itself.
8. preparation method according to claim 7, which is characterized in that using metal mask plate by evaporation process described The metal layer is formed on cathode layer, wherein the metal mask plate includes opening portion and occlusion part, and the opening portion corresponds to phase Interstitial site between the adjacent two pixel openings areas.
9. preparation method according to claim 7, which is characterized in that the metal layer includes resistance in 0.05~15ohm/ Metal material within the scope of sq.
10. preparation method according to claim 7, which is characterized in that the material of the metal layer is silver, in aluminium, copper, chromium One or more.
CN201910136144.2A 2019-02-25 2019-02-25 A kind of OLED display panel and preparation method thereof CN109755286A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
CN201910136144.2A CN109755286A (en) 2019-02-25 2019-02-25 A kind of OLED display panel and preparation method thereof

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CN109755286A true CN109755286A (en) 2019-05-14

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1540774A (en) * 2003-04-21 2004-10-27 三星电子株式会社 Semiconductor LED and its mfg. method
US20040235224A1 (en) * 2003-05-20 2004-11-25 Han-Tu Lin Method for forming a thin film transistor of an organic light emitting display
CN105428365A (en) * 2014-09-10 2016-03-23 群创光电股份有限公司 Film transistor substrate
CN106654047A (en) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled display panel and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1540774A (en) * 2003-04-21 2004-10-27 三星电子株式会社 Semiconductor LED and its mfg. method
US20040235224A1 (en) * 2003-05-20 2004-11-25 Han-Tu Lin Method for forming a thin film transistor of an organic light emitting display
CN105428365A (en) * 2014-09-10 2016-03-23 群创光电股份有限公司 Film transistor substrate
CN106654047A (en) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled display panel and manufacturing method thereof

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