CN1862834A - Zinc oxide based film transistor and chip preparing process - Google Patents
Zinc oxide based film transistor and chip preparing process Download PDFInfo
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- CN1862834A CN1862834A CN 200610050305 CN200610050305A CN1862834A CN 1862834 A CN1862834 A CN 1862834A CN 200610050305 CN200610050305 CN 200610050305 CN 200610050305 A CN200610050305 A CN 200610050305A CN 1862834 A CN1862834 A CN 1862834A
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000008569 process Effects 0.000 title claims description 15
- 229910003363 ZnMgO Inorganic materials 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 29
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- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 13
- 239000002120 nanofilm Substances 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000000992 sputter etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
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- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 210000002469 basement membrane Anatomy 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
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- 239000011701 zinc Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Abstract
This invention relates to one application new type high dielectric constant material that cubic ZnMgO crystal film as grid insulating layer, hexagonal phase ZnO base semiconductor nm film as channel layer, ITO or ZnO:Al conducting glass as electrode film TFT reparation technique, it belongs to micro electronic technology field. The advantage is that active layer and grid insulating device structure can grow on the glass substrate to provide one simple TFT manufacture technique, comparing to existing non crystal or multi crystal silicon TFT, the zinc oxide group is transparent to visible light and high mobility. It has great application prospect in flat panel display, printer, and duplicator and video camera products.
Description
Technical Field
The invention relates to a novel thin film transistor manufacturing method, belongs to the technical field of micro-electronics, and particularly relates to a zinc oxide-based thin film transistor and a chip preparation process.
Background
Thin-film transistors (TFTs), also known as Thin-film transistors, are one type of field effect transistors, and currently TFTs occupy the second largest market of silicon chip technology, and have important applications in flat panel displays, cameras, printers, copiers, and consumer electronics, where low cost is a feature because TFT devices are much simpler in process, as compared to the complex processes of semiconductor surface treatment, isolation, doping, photolithography, thinning, etc. used in microelectronic devices fabricated on single crystal Si and GaAs substrates, where the main processes are low temperature deposition of channels and gates on substrates such as conductive transparent glass, and subsequent photolithography. More importantly, the channel layer material of the TFT device is not limited to monocrystalline silicon, amorphous silicon and polycrystalline silicon thin films are the most widely used in the existing TFT devices, and the used substrate can also be glass and the like.
The development of TFTs dates back to the 70 s of the 20 th century, and w.z.spear et al measured the interface state densities of various α -Si thin films by a field effect method, found that the conductivity of the thin films can be controlled by the modulation gate voltage and can vary within several orders of magnitude, and used this field effect structure to design α -Si field effect transistors, known as amorphous silicon thin film transistors (α-Si: H TFTs).
In a TFT-OLED (organic light emitting display), a high-performance Transparent Thin Film Transistor (TTFT) is a key device, and an α -Si: H TFT is used as an active switching device and widely applied to a TFT-LCD (liquid crystal display).
However, the greatest disadvantage of α -Si: H TFTs is the low effective mobility (<1 cm)2V.S), and since the band gap of α -Si is narrow (-1.7 eV), it is not transparent in the visible light range, which is not good for improving the brightness of the display, and the device failure is caused by the change of illumination or environmental temperature, which limits the application range of α -Si: H TFT, especially α -Si: H TFT can not be used to make the starting circuit, and TFT-LCD needs to be configured with special peripheral driving circuit, which increases the manufacturing cost and reduces the reliability.
The polysilicon technology is used for replacing α -Si, although the effective mobility is expected to be greatly improved, the growth temperature of the polysilicon is as high as more than 600 ℃, transparent glass is difficult to bear the high temperature of more than 500 ℃, the manufacturing cost is greatly increased, and the problem of absorption of visible light is not completely solved.
The transparent thin film transistor manufactured by using the wide band gap GaN and SiC semiconductor needs to grow on the single crystal substrate of the semiconductor at high temperature, for example, the growth temperature of GaN is more than or equal to 800 ℃, the GaN can not grow on glass, and the manufacturing cost is high.
Disclosure of Invention
The invention aims to solve the problems of the existing transparent thin film transistor, and aimsto provide a thin film transistor which has high mobility, can grow on a glass substrate at a low temperature, has a good interface with a gate insulating layer, is simple in process treatment process, has good thermal stability and is low in cost, and a preparation method thereof.
The thin film transistor provided by the invention comprises a shell, a leading-out electrode, a gate insulating layer, an electrode, a thin film channel layer and a source drain electrode, and is characterized in that the device structure is a gate electrode-high-k gate electrode insulating layer-thin film channel layer-source drain electrode, the channel layer is a transparent zinc oxide-based semiconductor nano thin film, and the gate electrode insulating layer is a high-kappa nano thin film.
The high-kappa nano film disclosed by the invention is prepared from the following materials: cubic phase ZnMgO, HfO2，ZrO2，Si3N4，Al2O3，Y2O3One of the nano films is preferably a cubic phase ZnMgO nano film.
The zinc oxide-based semiconductor nano film is used as a channel layer material and comprises the following components in parts by weight: one of undoped ZnO, n-type doped ZnO, p-type doped ZnO, hexagonal ZnMgO and InGaZnO can be selected according to the performance requirement of the device.
The transparent conductive substrate of the invention is: indium tin oxide coated glass, or glass coated with aluminum doped ZnO films.
The front electrode of the gate insulating layer is ITO or Al or a combination of the ITO and the Al, or Al +% 2Si, Pt/W, Pt/W, Au/Ni, Au/Ti or Au/C double-layer electrode structure, and the ITO lead electrode is correspondingly of a Pt/W, Au/Ni, Au/Ti or Au/Cr double-layer electrode structure; the ITO lead electrode for the source and drain electrodes is correspondingly of a Pt/W, Au/Ni, Au/Ti or Au/Cr double-layer electrode structure.
The cubic phase ZnMgO gate insulating layer has the thickness of 1nm to 500nm, the channel conducting layer zinc oxide based semiconductor nano film has the thickness of 1nm to 500nm, and the metal electrode has the thickness of 100nm to 300 nm.
The invention discloses a preparation method of a zinc oxide based thin film transistor, which is characterized in that a layer of ZnO based semiconductor nano film is grown on a transparent conductive substrate through the epitaxial technology of a crystal film to be used as a channel layer, then a high-kappa gate insulating layer is deposited, and a device electrode is formed through photoetching and corrosion processes, and the preparation method comprises the following steps:
1. manufacturing a source drain electrode on the ITO conductive glass through photoetching and corrosion;
2. epitaxially growing a ZnO-based semiconductor nano film on ITO conductive glass to form a channel layer;
3. epitaxially growing a high-k gate electrode insulating layer on the channel layer;
4. depositing an electrode film of a TFT structure device;
5. photoetching and etching to form a grid electrode, a source electrode and a drain electrode;
6. and ball-welding Al wire or Au wire electrode leads on the grid electrode, the source electrode and the drain electrode, and packaging to obtain the zinc oxide based transparent thin film transistor.
The epitaxial technology can be one of the growth technologies such as pulse laser deposition, molecular beam epitaxy, laser-molecular beam epitaxy, metal organic chemical vapor deposition, electron beam evaporation reaction deposition or magnetron sputtering.
The etching process adopts photoetching and wet etching or a process route combining ion etching and wet etching for etching.
The photoetching comprises the steps of glue homogenizing, exposure, development and finally ion etching to remove the bottom film.
The wet etching method is characterized in that the prepared etching solution HCl: H for ITO2O∶HNO3Etching 3: 2: 1, metal electrode Al or Al + 2% Si with phosphoric acid H3PO4Corrosion, metal Pt/W, Au/Ni, Au/Ti or Au/C bilayer electrodesHNO for electrode3HCl (1: 3) corrosion, Al + cubic phase ZnMgO crystal thin film material + hexagonal phase ZnO based nano thin film material for preparing H3PO4∶H2O2Etching at a ratio of 10: 1; the etching of the Al electrode can also be completed by adopting inductive coupling plasma etching.
The invention has the technical effects that:
because wide band gap ZnO (3.37eV) semiconductor is transparent to visible light, can grow at low temperature and has no special requirement on the substrate, a crystal film with high selective orientation can be grown on the surfaces of glass, organic matters and the like, the non-doped ZnO film material is n-shaped, the manufacturing of an enhanced field effect transistor with most current carriers being electrons is facilitated, the mobility of ZnO is very high, and the mobility of single crystal ZnO at room temperature can reach 200cm2/V.S, the mobility of polycrystalline ZnO is 10-50 cm2/V.S。
The ZnMgO crystal film has a wider band gap. The ZnMgO crystal film not only has wide band gap, but also has other advantages, such as that high-quality crystal films can be directly obtained by epitaxial growth on various substrates, such as Si, glass, ITO transparent conductive glass and the like, the allowable variation range of the deposition thickness is wide, high-quality films can be obtained from nanometer to micrometer scale, the preparation process of film materials can be various, Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), Pulsed Laser Deposition (PLD), physical evaporation and sputtering technology and the like. Can control Mg in the film growth process2+Adjusting the forbidden band width by ion doping concentration; in one aspect, Mg2+Highly doped cubic phase Zn1-xMgxO (x 0.5) has high resistance, and a wider forbidden band width of more than 5.0eV (which means smaller leakage current) can be used as a proper gate insulating layer due to a larger dielectric constant epsilon-10.5 (which means a larger equivalent thickness); on the other hand, low doped hexagonal phase Zn1-xMgxO (x is less than or equal to 0.36) can achieve the purpose of adjusting the carrier concentration of the active layer by adjusting the forbidden band width under the condition of meeting the electrical conductivity and the light transmittance, and the carrier concentration can be 1015～1020The switching characteristic of the device is more than 103Even an inversion (p-type) semiconductor can be achieved to manufacture a depletion type TFT device;
the invention combines the advantages of high insulativity of the high dielectric constant (kappa) cubic phase ZnMgO crystal film and adjustable carrier concentration through the doped or undoped hexagonal phase ZnO-based semiconductor nano crystal film, thereby improving the interface characteristics of a channel layer and a gate insulating layer and improving the performance of a device, and a test result shows that the TFT has small leakage current and large dielectric constant which is superior to that of α -Si: H.
The inventionadopts transparent ITO conductive glass as a substrate, continuously deposits nanometer ZnMgO crystal films with hexagonal and cubic phase structures under the vacuum condition, and prepares the ZnO transparent thin film transistor by photoetching and electrode processes, thereby avoiding cross contamination in the process, improving the interface quality of a gate insulating layer/an active layer, and having the advantages of simple process, good thermal stability and cost.
Description of the drawings:
first, etching ITO conductive glass as source-drain electrode
Secondly, evaporating and plating low-doped hexagonal phase ZnO;
thirdly, evaporating high-doped cubic phase ZnMgO
FIG. four, deposition of Al electrode
Fifth, corroding Al/MgZnO/ZnO
Figure six, cross-sectional view of TFT device structure
Seventh, top view of TFT device structure
In the figure: 1 is a glass substrate; 2 is an ITO source drain electrode; 3 is an h-ZnO channel layer; 4 is a c-ZnMgO gate insulating layer; 5 is an Al electrode.
Detailed Description
The essential features and the remarkable advantages of the present invention will be further described below by way of specific examples, but the present invention is not limited to the examples.
Example 1
Cleaning ITO conductive glass
Ultrasonically cleaning an ITO substrate, cleaning with carbon tetrachloride, then acetone,then absolute ethyl alcohol, and finally drying with nitrogen;
photoetching ITO conductive glass to manufacture unit pattern of TFT structural device
(1) Coating photoresist on the front surface of the ITO conductive glass, wherein the thickness of the photoresist is about 0.8-0.9 mu m;
(2) placing the photoresist on a hot plate for pre-baking, and drying the photoresist under the conditions of 70-90 ℃ for 70-100 seconds;
(3) exposing by a photoetching machine for 20 seconds;
(4) immersing the ITO isolated island structure unit in a developing solution for developing for 15 seconds to manufacture an ITO isolated island structure unit graph;
(5) the bottom film is removed by ion etching for 30 seconds;
3. etching of ITO
Preparing corrosive liquid HCl: H2O∶HNO3Heating in water bath at 50 deg.c in the ratio of 3 to 2 to 1 for 40-60 sec;
4. and epitaxially growing a hexagonal ZnMgO crystal film and heavily doping Mg on the ITO conductive glass to form a cubic ZnMgO crystal film.
5. Evaporating electrode and manufacturing electrode of TFT device structure
(1) Ultrasonically cleaning a hexagonal phase ZnMgO and a cubic phase ZnMgO crystal thin film device structure which grows on an ITO substrate, cleaning with carbon tetrachloride, then acetone and then absolute ethyl alcohol, and finally drying with nitrogen;
(2) the front surface of the cubic phase ZnMgO film is plated with an electrode, the electrode material is a pure ITO or Al +% 2Si, Pt/W, Pt/W, Au/Ni, Au/Ti or Au/Cr composite layer, the electrode is plated by adopting electron beam evaporation, the temperature ofthe ITO on the substrate is set to be room temperature or 100-200 ℃ when the electrode is plated, so that the adhesion between the metal electrode and the substrate is improved, and the thickness of the metal electrode is 100-300 nm.
6. Lithography
(1) Coating photoresist on the front surface of the ZnMgO film deposited with the electrode, wherein the thickness of the photoresist is 0.8-0.9 mu m;
(2) placing the photoresist on a hot plate for pre-baking, and drying the photoresist under the condition of baking for 70-100 seconds at 70-90 ℃;
(3) exposing by a photoetching machine for 20 seconds;
(4) immersing the substrate into a developing solution for developing for 15 seconds to manufacture a unit graph of the TFT structure device;
(5) the ion etching removed the bottom film for 30 seconds.
7. Wet or dry etching
Wet etching Al + ZnMgO (insulating layer) + ZnMgO (active layer):
the Al + MgZnO is directly corroded by phosphoric acid, the ITO pattern can be damaged by corrosive liquid, and the reaction mechanism is as follows:
H3PO4in, Al can corrode ITO:
and H is added thereto2O2Al as catalyst, H2O2Decomposition reaction to produce oxygen (O)2) And water (H)2O) with O)2Al/Al may be added3+Away from the reaction surface,thereby avoiding the above chemical reactions.
H3PO4∶H2O2The etching temperature is 50 ℃, the etching time is 1 min 30 s, and the prepared solution only etches the wafer once.
And then, soaking in acetone to remove the residual photoresist, and finishing the TFT device tape-out of the Al electrode/cubic phase ZnMgO/hexagonal phase ZnO/ITO electrode, as shown in the fifth graph and the sixth graph.
Or the etching of the aluminum electrode is firstly completed by adopting Inductive Coupling Plasma (ICP) etching, the ICP low-power etching does not etch ZnMgO but etches Al, the etching depth of the Al can be well controlled, and then the ZnMgO etching is completed by adopting wet etching. And then, soaking in acetone to remove the residual photoresist, thereby completing the flow sheet of the ITO device.
8. And ball-bonding Al wire or Au wire electrode leads on the grid electrode, the source electrode and the drain electrode, and finally completing packaging.
The ZnO-based semiconductor channel layer with the wurtzite structure can also adopt one of pulse laser deposition, molecular beam epitaxy, laser-molecular beam epitaxy, metal organic chemical vapor deposition or magnetron sputtering and the like.
The preparation process of the TFT structure device adopting different electrode materials, the cubic phase ZnMgO material as the insulating layer and the different doped hexagonal phase ZnO-based material as the channel layer is the same as that of the TFT structure device.
Example 2
Cleaning ITO conductive glass
Ultrasonically cleaning an ITO substrate, cleaning with carbon tetrachloride, then acetone, then absolute ethyl alcohol, and finally drying with nitrogen;
cleaning and photoetching ITO conductive glass to manufacture unit patterns of TFT structural device
(1) Coating positive photoresist on the front surface of the ITO conductive glass, wherein the thickness of the positive photoresist is 0.8-0.9 mu m;
(2) placing the photoresist on a hot plate for pre-baking, and drying the photoresist under the condition of baking for 70-100 seconds at 70-90 ℃;
(3) exposing by a photoetching machine for 20 seconds;
(4) immersing the ITO isolated island structure unit in a developing solution for developing for 15 seconds to manufacture an ITO isolated island structure unit graph;
(5) the bottom film is removed by ion etching for 30 seconds;
3. etching the ITO, see FIG. 1
Preparing corrosive liquid HCl: H2O∶HNO3Heating in water bath at 50 deg.c in the ratio of 3 to 2 to 1 for 40-60 sec;
4. epitaxially growing an N lightly-doped hexagonal ZnO channel layer on the ITO conductive glass by using an MOCVD method, and then growing a cubic ZnMgO crystal film by using Mg heavy doping, wherein the structure is shown in the figure II and the figure III;
5. evaporating an electrode to manufacture an electrode of the TFT structure device, as shown in figure four;
(1) ultrasonically cleaning a hexagonal phase ZnMgO crystal thin film device structure and a cubic phase ZnMgO crystal thin film device structure which grow on an ITO substrate, cleaning with carbon tetrachloride, then acetone and then absolute ethyl alcohol, and finally drying with nitrogen;
(2) and (3) plating an electrode on the front surface of the cubic phase ZnMgO film, wherein the electrode is made of an Al film, the electrode is plated by adopting electron beam evaporation, and when the electrode is plated, the temperature of the substrate ITO is set to be room temperature, and the thickness of the metal electrode is 200 nm.
6. Ion etching
(1) Coating photoresist on the front surface of the ZnMgO film deposited with the Al electrode, wherein the thickness of the photoresist is 0.8-0.9 mu m;
(2) placing the photoresist on a hot plate for pre-baking, and drying the photoresist under the condition of 90 ℃ for 100 seconds;
(3) exposing by a photoetching machine for 20 seconds;
(4) immersing the substrate into a developing solution for developing for 15 seconds to manufacture a unit graph of the TFT structure device;
(5) the ion etching removed the bottom film for 30 seconds.
7. Dry etching of Al electrodes
Etching the aluminum electrode with Inductively Coupled Plasma (ICP) using an etching gas Cl2and/Ar, the ICP power is 150W, ZnMgO does not etch but corrodes Al under the power, the etching depth of the Al can be well controlled, and then the ZnMgO is etched by adopting wet etching.
8. Wet etching ZnMgO (insulating layer) + ZnMgO (active layer)
H3PO4∶H2O is 10: 1, the corrosion temperature is 50 ℃, the corrosion time is 1 min 30 s, and the prepared solution only corrodes the wafer once. And finally, soaking in acetone to remove the residual photoresist, thereby completing the flow sheet of the ITO device.
9. And ball-bonding Al wire or Au wire electrode leads on the grid electrode, the source electrode and the drain electrode, and finally completing the packaging.
Claims (10)
1. A zinc oxide based thin film transistor comprises a shell, a leading-out electrode, a gate insulation layer, a thin film channel layer, a source electrode, a drain electrode and a gate electrode, and is characterized in that the channel layer is a transparent zinc oxide based semiconductor nano thin film, and the gate insulation layer is a high-kappa nano thin film.
2. The zinc oxide-based thin film transistor according to claim 1, wherein the high- κ nano-thin film is made of: cubic phase ZnMgO, HfO2，ZrO2，Si3N4，Al2O3，Y2O3One of the nano films.
3. The zinc oxide-based thin film transistor according to claim 1, wherein the zinc oxide-based semiconductor nano-film is made of a channel layer made of: undoped ZnO, n-type doped ZnO, p-type doped ZnO, ZnMgO, InGaZnO.
4. The zinc oxide-based thin film transistor according to claim 1, wherein the zinc oxide-based semiconductor nano thin film transparent conductive medium is: indium tin oxide coated glass, or glass coated with aluminum doped ZnO films.
5. The zinc oxide-based thin film transistor according to claim 1, wherein the front electrode of the gate insulating layer is made of ITO or Al or a combination of the ITO and the Al or the Al +% 2Si, Pt/W, Pt/W, Au/Ni, Au/Ti or Au/C double-layer electrode structure, and the ITO lead electrode is made of Pt/W, Au/Ni, Au/Ti or Au/Cr double-layer electrode structure; the ITO lead electrode for the source and drain electrodes is correspondingly of a Pt/W, Au/Ni, Au/Ti orAu/Cr double-layer electrode structure.
6. The zinc oxide-based thin film transistor according to claim 1, wherein the cubic phase ZnMgO gate insulating layer has a thickness of 1nm to 500nm, the channel layer zinc oxide-based semiconductor nano-film has a thickness of 1nm to 500nm, and the metal electrode has a thickness of 100nm to 300 nm.
7. The method for preparing a zinc oxide-based thin film transistor according to claim 1, wherein a ZnO-based semiconductor nano-film is grown on a transparent conductive medium substrate by a crystal film epitaxial technique as a channel layer, a high- κ gate insulating layer is deposited, and a bottom film is removed by an etching process, comprising the steps of:
◆ manufacturing source and drain electrodes on the ITO conductive glass by photoetching and etching processes;
◆ growing ZnO-based semiconductor nano-film on ITO conductive glass as channel layer;
◆ epitaxially growing a high-k gate electrode insulating layer on the channel layer;
◆ making gate, source and drain electrodes of TFT device
◆ and ball-welding Al wire or Au wire electrode leads on the grid, source and drain electrodes, and packaging to obtain the zinc oxide based transparent thin film transistor.
8. The method for preparing a zinc oxide-based thin film transistor according to claim 7, wherein the epitaxial method of the crystal thin film is one of pulsed laser deposition, molecular beam epitaxy, laser-molecular beam epitaxy, metal organic chemical vapor deposition, electron beam evaporation reaction deposition or magnetron sputtering growth technology.
9. The method for preparing a zinc oxide-based thin film transistor according to claim 7, wherein the etching process is a combination of photolithography and wet etching, or ion etching and wet etching.
10. A method for preparing a zinc oxide-based thin film transistor according to claim 7 or 9, wherein the photolithography: after glue homogenizing, exposure and development, the basement membrane is removed by ion etching; the prepared corrosive liquid HCl: H for wet etching and ITO2O∶HNO3Etching 3: 2: 1, metal electrode Al or Al + 2% Si with phosphoric acid H3PO4Etching, metal Pt/W, Au/Ni, Au/Ti or Au/C double-layer electrode HNO3HCl (1: 3) corrosion, Al + cubic phase ZnMgO crystal thin film material + hexagonal phase ZnO based nano thin film material for preparing H3PO4∶H2O2Etching at a ratio of 10: 1.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102296270A (en) * | 2011-08-30 | 2011-12-28 | 华南理工大学 | Doped zinc oxide semiconductor material, and preparation method and application thereof |
| CN102646719A (en) * | 2012-04-25 | 2012-08-22 | 北京大学 | Oxide film, thin-film transistor and preparation method of thin-film transistor |
| CN103021873A (en) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor growing technology |
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| CN103794612A (en) * | 2009-10-21 | 2014-05-14 | 株式会社半导体能源研究所 | Semiconductor device |
| CN108022976A (en) * | 2017-11-03 | 2018-05-11 | 惠科股份有限公司 | transistor and transistor manufacturing method |
| CN111879796A (en) * | 2020-08-11 | 2020-11-03 | 厦门大学 | Transmission electron microscope high-resolution in-situ fluid freezing chip and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103794612A (en) * | 2009-10-21 | 2014-05-14 | 株式会社半导体能源研究所 | Semiconductor device |
| CN102296270A (en) * | 2011-08-30 | 2011-12-28 | 华南理工大学 | Doped zinc oxide semiconductor material, and preparation method and application thereof |
| CN102296270B (en) * | 2011-08-30 | 2013-06-19 | 华南理工大学 | Doped zinc oxide semiconductor material, and preparation method and application thereof |
| CN102646719A (en) * | 2012-04-25 | 2012-08-22 | 北京大学 | Oxide film, thin-film transistor and preparation method of thin-film transistor |
| CN103021873A (en) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor growing technology |
| CN103050413A (en) * | 2012-12-25 | 2013-04-17 | 青岛盛嘉信息科技有限公司 | Growing process of thin film transistor |
| CN103227207A (en) * | 2012-12-28 | 2013-07-31 | 青岛润鑫伟业科贸有限公司 | Growth technology of TFT (thin film transistor) |
| CN108022976A (en) * | 2017-11-03 | 2018-05-11 | 惠科股份有限公司 | transistor and transistor manufacturing method |
| CN111879796A (en) * | 2020-08-11 | 2020-11-03 | 厦门大学 | Transmission electron microscope high-resolution in-situ fluid freezing chip and preparation method thereof |
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