CN1862782B - 线环、包括此线环的半导体器件及线接合方法 - Google Patents

线环、包括此线环的半导体器件及线接合方法 Download PDF

Info

Publication number
CN1862782B
CN1862782B CN200510078874XA CN200510078874A CN1862782B CN 1862782 B CN1862782 B CN 1862782B CN 200510078874X A CN200510078874X A CN 200510078874XA CN 200510078874 A CN200510078874 A CN 200510078874A CN 1862782 B CN1862782 B CN 1862782B
Authority
CN
China
Prior art keywords
junction point
wire
metal wire
point
wire loop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200510078874XA
Other languages
English (en)
Other versions
CN1862782A (zh
Inventor
白户瑞穗
藤泽洋生
秋田忠寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to CN200510078874XA priority Critical patent/CN1862782B/zh
Publication of CN1862782A publication Critical patent/CN1862782A/zh
Application granted granted Critical
Publication of CN1862782B publication Critical patent/CN1862782B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • H01L2224/48096Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48455Details of wedge bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01007Nitrogen [N]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供一种提高在第二接合点的线接合强度、且能够缩短布线时间的线环形状、含有此形状线环的半导体器件及线接合方法。在用金属线(3)连接第一接合点(A)和第二接合点(Z)之间的线环形状中,利用第二接合点(Z)进行线接合后,不切断金属线(3)而形成附加线环(P),在第二接合点(Z)或其附近,以包括部分金属线(3)熔化的状态进行接合。

Description

线环、包括此线环的半导体器件及线接合方法
技术领域
本发明涉及一种用金属线将第一接合点和第二接合点之间进行连接的、具有规定形状的线环(wire loop),包括此线环的半导体器件及线接合(wirebonding)方法。
背景技术
作为过去进行的线接合方法,如图5A及图5B所示,具有通过金属线3将安装在引线框1的半导体芯片2的焊盘2a(第一接合点A)和引线框1的引线1a(第2接合点Z)进行连接的方法。作为此情况中的金属线3的环形形状,具有图5A所示的梯形和图5B所示的三角形状(例如,参照日本特开平10-256297号公报或日本特开2000-277558号公报)。
利用图6所示的一系列工序,形成图5A所示的梯形。在图6的工序(a)中,相对于第一接合点A降下毛细管4,对在金属线3的前端形成的球30进行接合。
接着,在图6的工序(b)中,将毛细管4升高到B点,抽出金属线3。接着,在图6的工序(c)中,将毛细管4水平移动到与第二接合点Z反方向的C点。
通常,将按照与第二接合点Z反方向使毛细管4水平移动称为倒退。由此,金属线3成为自A点到C点倾斜的形状,在金属线3的倾斜部分的上端带有弯曲3a。利用自此A点到C点的工序抽出的金属线3的部分成为图5A所示的颈部H(焊盘2a-弯曲3a间)。接着,在图6的工序(d)中,将毛细管4升高到D点,抽出金属线3。此后,在图6的工序(e)中,再一次使毛细管4水平移动到与第二接合点Z反方向的E点,即进行倒退。由此,金属线3成为自C点到E点倾斜的形状,在金属线3的此顷斜部分的上端带有弯曲3b。
自C点到E点抽出的金属线3,成为图5所示的梯形的上底部分L(弯曲3a-弯曲3b间)。接着,在图6的工序(f)中,将毛细管4升高到F点,将相当于图5A所示的倾斜部S(弯曲3b-引线1a)的金属线抽出。并且,图6的工序(f)中,经过位置f1、f2,降下毛细管4,使之位于第二接合点Z,将金属线3接合在第二接合点Z。
此外,利用图7所示的一系列工序形成图5B所示的三角环。由于三角环没有形成图5A的梯形环的梯形上底部L(弯曲3a-弯曲3b),所以,不进行图6的工序(d)(e)中的第2次的倒退动作。因此,对应于图6的工序(d)(e)(f(除f1、f2外))的工序仅为图7所示的工序(d)。即,图7的工序(b)(c)与图6的工序(b)(c)相同,图7的工序(c)中的第一次的倒退后,在图7的工序(d)中,将毛细管4升高到F点,抽出金属线3。此后,在图7的工序(e)中,进行与图6的工序(f)相同的动作,毛细管4经过位置e1、e2,将金属线3接合在第二接合点Z。
利用这种接合方法形成线环时,由于为了在毛细管的端部进行按压,在第二接合点1a(Z点)处的金属线连接部的形状就成为月牙状,存在不能合适地保证剥离强度的担心。
因此,提出了一种在金属线的端部接合之上,重叠进行球接合的称为安全接合的接合方法。此方法如日本特开昭57-12530号公报中所记载,是将金属线接合在第二接合点后,暂时切断金属线,在金属线的前端形成球后,再一次在第二接合点从上进行球接合的方法。进行球接合后,直接切断金属线,或者进一步在与球接合的位置不重合的点进行端部接合。
发明内容
但是,在上述的安全接合方法中,暂时在第二接合点进行线接合后切断金属线,由于重新在金属线前端形成球,并在第二接合点进行球接合,所以存在耗费时间这样的问题。
本发明的课题在于提供一种提高在第二接合点的线接合强度,并且可减少布线时间的规定形状的线环。
此外,本发明的另一课题在于提供一种具有这种形状的线环的半导体器件。
本发明的再一课题在于提供一种能够形成这种形状的线环的线接合方法。
为解决上述课题,本发明的线环,其特征在于,在利用金属线连接第一接合点和第二接合点之间的线环中,在线接合于第二接合点上的金属线的延长部上无需切断金属线而形成有附加线环,该附加线环以包括部分金属线熔化的状态接合在第二接合点或其附近。
也可形成多个上述附加线环,在第二接合点或其附近对其进行接合。
此外本发明的线接合方法,其特征在于,在线接合在第一接合点和第二接合点之间的方法中,包括:
(a)在第一接合点连接金属线的第一工序;
(b)接着,进行使毛细管通过所设定的至少一个位置的点的上升·下降移动及水平移动或组合这些移动的环控制、并形成从第一接合点延伸到第二接合点的线环的工序;
(c)接着,在第二接合点进行金属线接合的工序;
(d)接着,边进行使毛细管通过所设定的至少一点的上升·下降移动及水平移动或组合这些移动的环控制、边抽出金属线并形成附加线环的工序。
(e)接着,将附加线环以包括部分金属线熔化的状态接合在第二接合点或其附近的工序。
在上述工序中,所说的所设定的至少一个位置的点是指作为毛细管的移动通过点而预先设定在坐标轴(X、Y、Z)上的n(n表示自然数)个点。
在本发明的接合方法中,也可多次重复交替上述工序(d)和上述工序(e),形成多个附加线环,在第二接合点或其附近进行接合。
并且本发明的半导体器件,其特征在于,在具有用金属线连接第一接合点和第二接合点之间的线环的半导体器件中,所述线环在线接合于第二接合点上的金属线的延长部上无需切断金属线而形成有附加线环,该附加线环以包括部分金属线熔化的状态接合在第二接合点或其附近。
再有,半导体器件中的线环也可构成为,形成有多个上述附加线环,并在第二接合点或其附近对其进行接合。
根据本发明,能够提供一种提高第二接合点处的金属线接合强度、且能够缩短布线时间的、具有规定形状的线环,以及包括该线环的半导体器件及线接合方法。
附图说明
图1A是表示本发明的半导体器件及其线环形状的一个实施方式的正视图,图1B是表示另一个实施方式的正视图。
图2是形成图1A所示的线环形状的工序图。
图3是形成图1B所示的线环形状的工序图。
图4A及图4B分别表示利用本发明的线接合方法,按飞机着陆时的轮廓形成梯形及三角形状的线环的例子的正视图。
图5A及图5B表示过去使用的线环形状,图5A是表示梯形的正视图,图5B表示三角形状的正视图。
图6是表示形成图5A的梯形环的毛细管的移动轨迹所形成的各时刻的金属线形状的状态图。
图7是表示形成图5B的三角环的毛细管的移动轨迹所形成的各时刻的金属线形状的状态图。
具体实施方式
下面,根据图1A及图1B说明本发明的半导体器件的实施方式。再有,对与图5A相同或相当构件或相当部分赋予相同符号,并加以说明。
在半导体器件10中,通过由金属线2构成的线环(ワイヤル一プ)连接安装到引线框1上的半导体芯片2的焊盘2a(第一接合点A)和引线框1的引线1a(第二接合点Z)。连接在第一接合点A和第二接合点Z的线环大致为梯形,包括通过球30连接到焊盘2a上的颈部H,梯形的上底部分L及倾斜部S,并在梯形的上底部分L的两端带有弯曲3a、3b。
以上与现有的半导体器件相同。在本实施方式中,特点是在第二接合点Z附近。
即,在第二接合点Z中,进行金属线接合后,不切断金属线而形成附加线环,在此位置进行含有部分金属线熔化的状态的接合。由此,半导体器件10具有第二接合点处的接合面积扩大的线环形状。
接着,按照图2说明根据用于获得图1A所示的半导体器件10的本发明的线接合方法及利用此方法形成的线环形状的实施方式。再有,在本图中,对与图5A和图6相同或相当的构件或相当的部分赋予相同的符号并加以说明。
在图2所示的工序(a)中,相对第一接合点A,降下毛细管4,对形成在金属线3的前端的球30进行接合。
接着,在工序(b)中,使毛细管4升高到B点,抽出金属线3。接着,在工序(c)中,将毛细管4水平移动到与第二接合点Z反方向的C点,即进行倒退动作。
由此,金属线3成为自A点到C点倾斜的形状,在金属线3的倾斜部分的上端带有弯曲3a。利用自A点到C点的工序抽出的金属线3的部分,形成图1A所示的颈部H(焊盘2a-弯曲3a间)。
接着,在图2的工序(d)中,使毛细管4升高到D点,并抽出金属线3。接着,在工序(e)中,再一次将毛细管4水平移动到与第二接合点Z反方向的E点,即进行倒退动作。由此,金属线3成为自C点到E点的倾斜形状,在金属线3的该倾斜部分的上端带有弯曲3b。
自此C点到E点抽出的金属线3,形成图1A所示的梯形的上底部分L(弯曲3a-弯曲3b间)。接着,在图2的工序(f)中,使毛细管4升高到F点,将与图1A所示的倾斜部S(弯曲3b-引线1a间)相对应的部分的金属线3抽出。并且,在工序(f)中,经过位置f1、f2,降下毛细管4,使其位于第二接合点Z,将金属线3接合在第二接合点Z。
由于现有的梯形线环在这里切断金属线3,在本发明的实施方式中,接着,在图2所示的工序(g)中,使毛细管4升高到G点,抽出金属线3,接着,在工序(h)中,使毛细管4离开第二接合点Z,水平移动到第一接合点A方向上的H点。由此,形成金属线3的自引线1a到H点的倾斜形状。接着,在工序(I)中,使毛细管4升高到I点,抽出金属线3。此后,在工序(j)中,使毛细管4水平移动到第二接合点Z方向上的J点。接着,在工序(k)中,降下毛细管,在第二接合点Z或第二接合点Z附近进行线接合。
再有,图2(g)~(k)的工序,相当于本发明的权利要求书中的工序(d)和工序(e)。通过进行这些工序,形成附加线环P,包含部分金属线3的熔化,扩大第二接合点Z上的接合面积,从而能使第二接合点的接合强度提高。再有,也可多次重复进行这些(g)~(k)工序(即对应本发明的权利要求书中的工序(d)和工序(e))。
每次进行上述各工序,如图1A所示,预先在坐标轴(X、Y、Z)上的多个位置设定毛细管4的移动通过点n1、n2、n3、…,进行环控制。
根据此方法,与过去提出的在第二接合点进行线接合后、暂时切断金属线、重新在金属线前端形成球、在第二接合点上从上进行球接合的安全接合相比,既能具有同样的接合强度,又缩短了线环形状的形成时间。
接着,按照图3说明根据用于获得图1B所示的半导体器件10的本发明的线接合方法及利用此方法形成的线环形状的另一个实施方式。
图3所示的(a)~(f)的工序,由于与图2所示的工序(a)~(f)的情况相同,所以省略说明。不同的部分是图3所示的工序(g)~(k)的部分。即,如图3所示,在工序(f)中,经过位置f1、f2,降下毛细管4,使其位于第二接合点Z,将金属线3接合在第二接合点Z后,接着,在工序(g)中,将毛细管升高到G点,抽出金属线3,在工序(h)中,使毛细管4按离开第一接合点A的方向水平移动到H1点。由此,金属线3成倾斜的形状。接着,在工序(i)中,使毛细管4升高到I1点并抽出金属线3。此后,在工序(j)中,使毛细管4向朝向第一接合点A(第二接合点Z)的方向水平移动到J1点。接着,在工序(k)中,降下毛细管4,在第二接合点Z或第二接合点Z附近进行线接合。
再有,图3所示的(g)~(k)的工序相当于本发明的权利要求书中的工序(d)和工序(e)。通过进行这些工序,与图2所示的工序(g)~(k)的情况相同,使金属线3熔化,扩大第二接合点Z上的接合面积,从而提高第二接合点处的接合强度。再有,也可多次重复进行这些(g)~(k)的工序(即对应本发明的权利要求书中的工序(d)和工序(e))。
在这些工序中,通过调节毛细管的移动量,如图4A所示,线环的形状能够得到金属线3的一部分与第二接合点Z接触的飞机着陆时的轮廓,并提高接合强度。
线环的形状,即使是图5B所示的三角形状的情况,若同样进行时,也能够获得图4B所示的飞机着陆时的轮廓。
再有,图2所示的工序(g)~(f)和图3所示的(g)~(k)工序,虽然毛细管4的移动以第二接合点Z作为基准,向第一接合点A方向移动,或向反方向移动,但并不限定于此,将第二接合点Z作为基准,能够在360°的范围内自由地进行方向的确定,能够得到所熔化的金属线的方向各不相同的形状。并且,由此也能够提高所得到的接合强度。
在半导体器件的制造中,能够利用提高金属线相对于接合点的接合强度、并能够缩短布线时间的线接合方法。

Claims (6)

1.一种线环,利用金属线(3)连接第一接合点(A)和第二接合点(Z)之间,金属线(3)先以形成在前端上的球(30)接合在第一接合点(A)上,然后接合在第二接合点(Z)上,其特征在于,
在线接合于第二接合点(Z)上的金属线(3)的延长部上无需切断金属线(3)而形成有附加线环(P),该附加线环(P)以包括部分金属线(3)熔化的状态接合在第二接合点(Z)的附近,使得附加线环(P)形成具有从第二接合点(Z)向第一接合点(A)延伸的折返部分,从而扩大第二接合点(Z)处的接合面积,
上述第一接合点(A)位于安装在引线框(1)上的半导体芯片(2)的焊盘(2a)上,上述第二接合点(Z)位于引线框(1)的引线(1a)上。
2.根据权利要求1中所述的线环,其特征在于,上述附加线环(P)形成多个,并接合在第二接合点(Z)或其附近。
3.一种线接合方法,对第一接合点(A)和第二接合点(Z)之间进行线接合,其特征在于,包括:
(a)在第一接合点(A)连接形成在金属线(3)的前端上的球(30)的工序;
(b)接着,进行使毛细管(4)通过所设定的至少一个位置的点(B,C,D,E,F;n1,n2,n3,n4,n5,n6)的上升、下降移动及水平移动或组合这些移动的环控制、并形成从第一接合点(A)延伸到第二接合点(Z)的线环的工序;
(c)接着,在第二接合点(Z)进行金属线(3)的接合的工序;
(d)接着,一边进行使毛细管(4)通过所设定的至少一点(G,H,I,J;n8,n9,n10,n11)的上升·下降移动及水平移动或组合这些移动的环控制、一边抽出金属线(3)并形成附加线环(P)的工序,工序(d)包括:
在抽出金属线(3)的同时,将毛细管(4)垂直升高至第一点(G);
然后,在朝向第一接合点(A)的方向上将毛细管(4)水平移动至第二点(H);
接着在抽出金属线(3)的同时,将毛细管(4)垂直升高至第三点(I);以及
接着将毛细管(4)水平移动至第二接合点(Z)上方的第四点(J),附加线环(P)形成具有折返部分,该折返部分位于第二接合点(Z)上、更靠近第一接合点(A)的一侧;
(e)接着,将附加线环(P)以包括部分金属线(3)熔化的状态接合在第二接合点(Z)的附近的工序,使得附加线环(P)形成具有从第二接合点(Z)向第一接合点(A)延伸的折返部分,从而扩大第二接合点(Z)处的接合面积,
上述第一接合点(A)位于安装在引线框(1)上的半导体芯片(2)的焊盘(2a)上,上述第二接合点(Z)位于引线框(1)的引线(1a)上。
4.根据权利要求3中所述的线接合方法,其特征在于,交替地多次重复上述工序(d)和上述工序(e),形成多个附加线环(P),在第二接合点(Z)或其附近进行接合。
5.一种半导体器件(10),具有:第一接合点(A),第二接合点(Z),包括连接第一接合点(A)和第二接合点(Z)之间的金属线(3)的线环,金属线(3)先以形成在前端上的球(30)接合在第一接合点(A)上,然后接合在第二接合点(Z)上,其特征在于,
所述线环包括在线接合于第二接合点(Z)上的金属线(3)的延长部上无需切断金属线(3)而形成的附加线环(P),该附加线环(P)以包括部分金属线(3)熔化的状态接合在第二接合点(Z)的附近,使得附加线环(P)形成具有从第二接合点(Z)向第一接合点(A)延伸的折返部分,从而扩大第二接合点(Z)处的接合面积,
上述第一接合点(A)位于安装在引线框(1)上的半导体芯片(2)的焊盘(2a)上,上述第二接合点(Z)位于引线框(1)的引线(1a)上。
6.根据权利要求5中所述的半导体器件,其特征在于,上述附加线环(P)形成多个,并接合在第二接合点(Z)或其附近。
CN200510078874XA 2005-05-11 2005-05-11 线环、包括此线环的半导体器件及线接合方法 Active CN1862782B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200510078874XA CN1862782B (zh) 2005-05-11 2005-05-11 线环、包括此线环的半导体器件及线接合方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200510078874XA CN1862782B (zh) 2005-05-11 2005-05-11 线环、包括此线环的半导体器件及线接合方法

Publications (2)

Publication Number Publication Date
CN1862782A CN1862782A (zh) 2006-11-15
CN1862782B true CN1862782B (zh) 2011-03-23

Family

ID=37390164

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510078874XA Active CN1862782B (zh) 2005-05-11 2005-05-11 线环、包括此线环的半导体器件及线接合方法

Country Status (1)

Country Link
CN (1) CN1862782B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104477A1 (en) * 2002-11-21 2004-06-03 Hiromi Fujisawa Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104477A1 (en) * 2002-11-21 2004-06-03 Hiromi Fujisawa Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus

Also Published As

Publication number Publication date
CN1862782A (zh) 2006-11-15

Similar Documents

Publication Publication Date Title
KR100379608B1 (ko) 반도체장치 및 그의 제조방법
CN1815727B (zh) 引线回路,具有该引线回路的半导体器件以及引线接合方法
US6774494B2 (en) Semiconductor device and manufacturing method thereof
JP3946730B2 (ja) ボンディングワイヤのループ形状及びそのループ形状を備えた半導体装置並びにワイヤボンディング方法
CN100409422C (zh) 引线环及其半导体器件、引线接合方法和引线接合装置
US7584881B2 (en) Low loop height ball bonding method and apparatus
CN102187443B (zh) 引线焊接方法以及半导体装置及其制造方法
KR100322191B1 (ko) 와이어 본딩방법
CN102456659B (zh) 半导体芯片及用于制造半导体芯片的布局制备方法
KR20050023972A (ko) 반도체 소자의 와이어 본딩 방법
CN104885208A (zh) 半导体装置以及半导体装置的制造方法
CN1862782B (zh) 线环、包括此线环的半导体器件及线接合方法
US8016182B2 (en) Wire loop, semiconductor device having same and wire bonding method
CN101483143A (zh) 用于形成焊料凸点的模板、该模板的制造方法以及使用该模板检测焊料凸点的方法
US20070182026A1 (en) Semiconductor device
JP4105996B2 (ja) ワイヤボンディング方法
US11145617B2 (en) Semiconductor structure
US20070262446A1 (en) Stacked bump structure and manufacturing method thereof
JPH04294552A (ja) ワイヤーボンディング方法
CN103295927B (zh) 凸点打线焊接方法
JP6644352B2 (ja) 半導体装置及びその製造方法
JP3830485B2 (ja) ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法
JP5176557B2 (ja) 電極パターンおよびワイヤボンディング方法
CN101431059A (zh) 打线结构及方法
JP2006270096A (ja) ワイヤ接続を作製する方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant